j9c11_avr.fm
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- ふじよし あいしま
- 5 years ago
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1 AVR Type: AVR-M AVRL Issue date: September 211 RoHS EU Directive 22/95/EC PBB PBDE
2 (1/1) SMD RoHS AVR AVR-M AVRL Varistor 2Zener diode Current(A) Positive direction Zener diode /Vz:6.8V Chip varistor /V1mA:12V 2 Zener Diodes A capacitance content Negative direction Voltage(V) ESD, Surge voltage ESD, Surge voltage Power line Signal line IC Power line Signal line IC Insert a varistor between a line and ground RoHS EU Directive 22/95/EC PBB PBDE
3 (2/1) V 1.1pF / + AVR-M15/168/212 AVR-M14A2/63/AVRL 4 to +125 C 4 to +85 C 4 to +125 C 4 to +85 C Inner electrode Varistor body (Palladium) (Zinc Oxide: ZnO semiconductor ceramics) Sn plating Ag termination underlayer Ni plating 63 type 15 type 168 type 212 type 141 type Circuit voltage(v) PDA PC DVD-ROM CD-ROM CD/MD/MP3 LCD CAN-BUS ECU 26 C max. 25 C 22 C 18 C 15 C Preheating 6 to 12s Time(s) 1s max. Soldering 6s max. Natural cooling
4 (3/1) AVR-M AVR-M 15 C 27 M T AAB (1) (2) (3) (4) (5) (6) (7) (1) (2) L W mm mm mm mm 14A mm 2 (3) (4) V 63/15/168/212 W T B L mm L W T B min. (mg)typ. 63.6±.3.3±.3.3± ±.5.5±.5.5± ±.1.8±.1.8± ± ±.2 1.± (5) K ±1% M ±2% (6) T B (7) TDK b a a b c to.35.2 to.3.25 to to.5.35 to.45.4 to to.8.6 to.8.6 to to to.9.9 to ±.2 b c mm.6max..2typ. 1.±.2.36±.2.64typ..32±.2 Weight: 4mg typ. Dimensions in mm 1. to to to.45.6 to.66.3 to.4 Dimensions in mm
5 (4/1) Ip(A) C(pF) Vcl(V) E(Joule) V1mA(V)[DC1mA] [8/2µs] [1kHz, 1Vrms] Vdc(V) [8/2µs] [1/1µsec] 63 AVRM63C6R8N 11N 6.8 (4.76 to 8.84) 3.5 max. 14[1A].1 max. 1 max. 1 typ. AVRM63C8M 11N 8 (6.4 to 9.6) 5.5 max. 17[1A].1 max. 4 max. 1 typ. AVRM63C12M 11N 12.8 (1 to 15.6) 5.5 max. 2[1A].1 max. 5 max. 1 typ. AVR-M63C12M AAB 12 (9.6 to 14.4) 7.5 max. 23[1A].1 max. 1 max. 33 typ. 15 AVRM15C6R8N 11N 6.8 (4.76 to 8.84) 3.5 max. 14[1A].2 max. 1 max. 1 typ. AVR-M15C8M AAB 8 (6.4 to 9.6) 5.5 max. 14[1A].4 max. 25 max. 65 typ. AVR-M15C8M ADB 8 (6.4 to 9.6) 5.5 max. 14[1A].4 max. 25 max. 48 typ. AVR-M15C8M ABB 8 (6.4 to 9.6) 5.5 max. 15[1A].2 max. 3 max. 1 typ. AVR-M15C8M ACB 8 (6.4 to 9.6) 5.5 max. 19[1A].1 max. 1 max. 33 typ. AVR-M15C12M AAB 12 (9.6 to 14.4) 7.5 max. 2[1A].5 max. 1 max. 13 typ. AVRM15C27K 11N 27 (24 to 3) 19 max. 55[1A].6 max. 4 max. 1 typ. AVR-M15C27M AAB 27 (21.6 to 32.4) 15 max. 5[1A].6 max. 4 max. 4 typ. AVR-M15C27M ABB 27 (21.6 to 32.4) 15 max. 5[1A].5 max. 1 max. 15 typ. 168 AVR-M168C8M AAB 8 (6.4 to 9.6) 5.5 max. 15[2A].9 max. 3 max. 65 typ. AVR-M168C12M 6AB 12 (9.6 to 14.4) 7.5 max. 2[2A].9 max. 5 max. 15 typ. AVR-M168C12M 2AB 12 (9.6 to 14.4) 7.5 max. 2[2A].6 max. 15 max. 4 typ. AVR-M168C18M 6AB 18 (14.4 to 21.6) 11 max. 3[2A].1 max. 3 max. 6 typ. AVR-M168C22K 6AB 22 (19.8 to 24.2) 16 max. 34[2A].1 max. 3 max. 56 typ. AVR-M168C22K 2AB 22 (19.8 to 24.2) 16 max. 37[2A].3 max. 1 max. 21 typ. AVR-M168C27K 6AB 27 (24 to 3) 19 max. 42[2A].1 max. 48 max. 43 typ. AVR-M168C27K 2AB 27 (24 to 3) 19 max. 42[2A].1 max. 2 max. 16 typ. AVR-M168C27K ACB 27 (24 to 3) 19 max. 54[2A].5 max. 1 max. 6 typ. AVR-M168C27M AAB 27 (21.6 to 32.4) 17 max. 52[2A].5 max. 2 max. 3 typ. AVR-M168C27M ABB 27 (21.6 to 32.4) 17 max. 52[2A].5 max. 2 max. 15 typ. AVRM168C39K 271N 39 (35 to 43) 28 max. 69[2A].1 max. 78 max. 27 typ. 212 AVR-M212C12M 6AB 12 (9.6 to 14.4) 7.5 max. 2[5A].2 max. 6 max. 1 typ. AVR-M212C22K 6AB 22 (19.8 to 24.2) 16 max. 38[5A].3 max. 1 max. 8 typ. AVR-M212C39K 6AB 39 (35 to 43) 28 max. 62[5A].3 max. 1 max. 43 typ. 141 AVR-M14A2C24M 6N 24 (2 to 27) 16 max. 5[1A].1 max. 5 max. 6 typ.[1mhz] AVR-M14A2C27M 47N 27 (21.6 to 32.4) 15 max. 54[1A].7 max. 5 max. 47 typ.[1mhz] AVRM14A2C27M 15N 27 (21.6 to 32.4) 15 max. 55[1A].2 max. 3 max. 15 typ.[1mhz] AVRM14A2C27M 3R3F 27 (21.6 to 32.4) 1 max. 45[.2A].2 max..2 max. 3.3 typ.[1mhz] TB / 15, 1, 4, 2, 4, V1mA DC1mA (V) DC Vdc (V) 5µA max. Vcl (V) E (Joule) Ip (A) C (pf) 8/2µs 1 1/1µs 2 1 8/2µs 1 1 1kHz1MHz 1Vrms 1 8/2µs Current 1% 9% 5% 2 1/1µs 1% 9% 8µs 2µs Time Energy 5% 1µs 1µs Time
6 (5/1) AVRL AVRL 1 1A 3R3 F T A (1) (2) (3) (4) (5) (6) (7) L (1) W (2) L W mm mm T B (3) 1A 1Vdc (4) 1R1 1.1pF 3R3 3.3pF 6R8 6.8pF mm L W T B min. (mg)typ ±.5.5±.5.5± ±.1.8±.1.8± c (5) N F G ±.3pF ±1pF ±2pF b a b mm a b c 15.3 to.5.35 to.45.4 to to.8.6 to.8.6 to.8 (6) T B (7) TDK C(pF) [1MHz, 1Vrms] Vdc(V) T: B: Rdc(MΩ) [3Vrms] 15 AVRL11A1R1N A 1.1[.8 to 1.4] 1 max. 1 min. 9 typ. AVRL11A1R1N B 1.1[.8 to 1.4] 1 max. 1 min. 39 typ. AVRL11C2R2D A 2.2[1.7 to 2.7] 16 max. 1 min. 9 typ. AVRL11A3R3F A 3.3[2.3 to 4.3] 1 max. 1 min. 27 typ. AVRL11A6R8G A 6.8[4.8 to 8.8] 1 max. 1 min. 27 typ. 168 AVRL161A1R1N A 1.1[.8 to 1.4] 1 max. 1 min. 9 typ. AVRL161A1R1N B 1.1[.8 to 1.4] 1 max. 1 min. 39 typ. AVRL161A3R3F A 3.3[2.3 to 4.3] 1 max. 1 min. 27 typ. AVRL161A6R8G A 6.8[4.8 to 8.8] 1 max. 1 min. 27 typ. V1mA(V)[DC1mA] / 1, 4, C 1MHz (pf) 1Vrms Vdc DC (V) 5µA max. Rdc (MΩ ) V1mA (V) DC1mA
7 (6/1) V1mA:12V 1 15pF 6.8pF 3.3pF 3pF V1mA:8V 1 Current(A) V1mA:27V V1mA:22V V1mA:18V Impeadance(Ω) pF 16pF 4pF 65pF Voltage(V) Frequency(MHz) 1 1 Insertion loss(db) pF 65pF 4pF 16pF 3pF 6.8pF 15pF 3.3pF Capacitance(pF) pF 65pF 4pF 16pF 3pF 15pF 6.8pF 3.3pF Frequency(MHz) Frequency(MHz)
8 (7/1) 15pF 33Ω /8kV.1 1MΩ 33Ω Discharge gun Test sample High voltage DC power supply 15pF ESD simulator ESD simulator AVR-M63 V1mA/V1mA(%) Number of discharge(times) AVR-M15 V1mA/V1mA(%) Number of discharge(times) AVR-M168 V1mA/V1mA(%) Number of discharge(times) AVRL11A3R3F Capacitance(pF) [1MHz] Number of discharge(times)
9 (8/1) Discharge current(a) Time(ns) Voltage(V) Open waveform 15pF, 33Ω, Contact discharge, Test level 1 AVR-M15C12MTAAB / V1mA:12V AVR-M15C8MTAAB / V1mA:8V Zener diode /Vz:6.2V Time(ns) [IEC61-4-2] ESD (kv) 1 (A) (ns) to to to to 1. Discharge gun ESD simulator 1MΩ High voltage DC power supply 33Ω 15pF ESD simulator Test sample 6dB attenuator 5Ω Oscilloscope I/O impedance: 5Ω Frequency range: DC to 18GHz Clamping voltage(v) Peak Average Open waveform 271V 11V 258V 93V AVR-M15C8MTAAB AVR-M15C12MTAAB Zener diode/vz:6.2v V 96V (voltage) Peak voltage Average voltage Peak voltage:peak voltage of standing up part Average voltage : Average voltage of 3 to 1ns ESD (Electro Static Discharge) absorption characteristics of V1mA-8V is superior to Vz-6.2V Zener diode. 3 1 (ns)
10 (9/1) (1) (2) Microphone/Receiver To LCD driver.8mm.5mm LCD panel 2.3mm 1.2mm 65% Key pad/switch Backlight LED Data terminal Audio/out Audio AMP Audio connector / Monitor OUT Video1 in Video2 in Video3 in Video5 in Digi Video Video Video Video Audio/out Audio AMP Audio connector L L/MONO L/MONO L/MONO L/MONO Audio Audio Audio Audio Audio R (3) IC AVRCMOS-IC ESD Insulation resistance of tested circuit(ω) With Zener Diode AVR-M168C12MT6AB ESD voltage(kv) CMOS: D74HC4C ESD generator : Noise Laboratory Co.,Ltd., ESS -63A 2pF-Ω method model equipment Contact type discharge ESD applied point: Vcc-ground
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INDEX PAGE 1. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC ) 2. 放射性無線周波数電磁界イミュニティ試験 5 Radiated, Radio Frequency, Electromagnetic
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R2A20135EVB-ND1 アプリケーションノート 調光対応、PFC機能付100V系R2A20135評価ボード
R19AN0012JJ0200 Rev.2.00 1. LED LED LED R2A20135 / ( ) / / THD/ R2A20135SP 2. No. 1 AC90 132V ( 47 63Hz) 2 9.1W (typ.) 3 (VF) DC35V 4 220mA (typ.) 5 85% (@Vin = AC100V) 6 0.9 (@Vin = AC90V 132V) 7 62kHz
NL-22／NL-32取扱説明書_操作編
MIC / Preamp ATT NL-32 A C ATT AMP 1 AMP 2 AMP 3 FLAT FLAT CAL.SIG. OVER LOAD DET. AMP 4 AMP 5 A/D D/A CONV. AMP 6 AMP 7 A/D CONV. Vref. AMP 8 AMP 10 DC OUT AMP 9 FILTER OUT AC DC OUT AC OUT KEY SW Start
AD8212: 高電圧の電流シャント・モニタ
7 V typ 7 0 V MSOP : 40 V+ V SENSE DC/DC BIAS CIRCUIT CURRENT COMPENSATION I OUT COM BIAS ALPHA 094-00 V PNP 0 7 V typ PNP PNP REV. A REVISION 007 Analog Devices, Inc. All rights reserved. 0-9 -- 0 40
uPC2745TB,uPC2746TB DS
Bipolar Analog Integrated Circuits 3 V IC µpc275tb, µpc27tb IC3 V V NESAT ft = 2 GHz IC VCC = 2.73.3 V VCC = 3.3 V µpc275tbfu = 2.7 GHz TYP. @3 db µpc27tbfu = 1.5 GHz TYP. @3 db µpc275tbisl = 38 db TYP.
CISPR 32の概要 (ed. 2)
CISPR 32 (ed. 2) e 2017 7 25 1 1 2 2 2.1.................. 2 2.2............... 2 2.2.1.......... 3 3 3 3.1.............. 4 3.2 EUT............. 4 3.2.1 EUT.............. 4 3.2.2.............. 4 3.3...............
LM35 高精度・摂氏直読温度センサIC
Precision Centigrade Temperature Sensors Literature Number: JAJSB56 IC A IC D IC IC ( ) IC ( K) 1/4 55 150 3/4 60 A 0.1 55 150 C 40 110 ( 10 ) TO-46 C CA D TO-92 C IC CA IC 19831026 24120 11800 ds005516
LM4040.fm
SC70 SOT-23 2.048V 2.500V 3.000V 4.096V 5.000V 8.192V 10.000V -2.5 60 A - 10.0 100 A 15mA 25 0.1 (A ) 1.2V 2 LM4041 LM4041 Precision Micropower Shunt Voltage Reference 19911220 24180 DS011323 Converted
LM6172 デュアル高速低消費電力、低歪み電圧帰還アンプ
Dual High Speed, Low Power, Low Distortion, Voltage Feedback Amplifiers Literature Number: JAJS854 100MHz 3000V/ s 50mA 2.3mA/ 15V ADSL 5V VIP III (Vertically Integrated PNP) LM6171 Dual High Speed, Low
pc817xj0000f_j
PC87XJF PC87XJF PC87XJF PC87XJF PC87 Date Jun.. 5 SHRP Corporation PC87XJF node Cathode Emitter Collector PC87XJF PC87XIJF node mark. ±..6 ±. Rank mark Factory identification mark Date code PC87.58 ±.5
INDEX PAGE. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC ) 2. 放射性無線周波数電磁界イミュニティ試験 4 Radiated Radio Frequency Electromagnetic Fiel
A27 58 0A /7 INDEX PAGE. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC6000 4 2) 2. 放射性無線周波数電磁界イミュニティ試験 4 Radiated Radio Frequency Electromagnetic Field Immunity Test (IEC6000 4 3) 3. 電気的ファーストトランジェントバーストイミュニティ試験
INDEX PAGE 1. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC ) 2. 放射性無線周波数電磁界イミュニティ試験 5 Radiated, Radio Frequency, Electromagnetic
67 58 01 1/18 INDEX PAGE 1. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC61000 4 2) 2. 放射性無線周波数電磁界イミュニティ試験 5 Radiated, Radio Frequency, Electromagnetic Field Immunity Test (IEC61000 4 3) 3.
(/6) MFeO M C C Mn-Zn Ni-Zn Mn-Zn MHz Ni-Zn MHz Mn-Zn to Ni-Zn to 8 J/kg K to W/m K. 6 /K to 7 N/m mm N/m. N/m - / 6 / j_.fm
Issue date: June RoHS EU Directive /9/EC PBB PBDE (/6) MFeO M C C Mn-Zn Ni-Zn Mn-Zn MHz Ni-Zn MHz Mn-Zn to Ni-Zn to 8 J/kg K to W/m K. 6 /K to 7 N/m mm 9.8 7 N/m. N/m - / 6 / j_.fm (/6). i =lim μa H. a.
LM5021 AC-DC Current Mode PWM Controller (jp)
LM5021 LM5021 AC-DC Current Mode PWM Controller Literature Number: JAJSAC6 LM5021 AC-DC PWM LM5021 (PWM) LM5021 (25 A) 1 ( ENERGY STAR CECP ) Hiccup (Hiccup ) 8 LM5021 100ns 1MHz AC-DC PWM 5021 LM Steve
INDEX PAGE 1. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC ) 2. 放射性無線周波数電磁界イミュニティ試験 5 Radiated, Radio Frequency, Electromagnetic
68 58 01 1/18 INDEX PAGE 1. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC61000 4 2) 2. 放射性無線周波数電磁界イミュニティ試験 5 Radiated, Radio Frequency, Electromagnetic Field Immunity Test (IEC61000 4 3) 3.
FEEL Prod Grap PH_Artwork_P0CAH QSG JP A6_ _Rev.4.indd
M100 Stereo Multi-Effects Processor with Legendary TC Reverbs and Effects 2 M100 3 ¼" TS 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. MUSIC Group MIDAS KLARK TEKNIK LAB GRUPPEN
LP3470 Tiny Power On Reset Circuit (jp)
Tiny Power On Reset Circuit Literature Number: JAJS547 IC ( C) CMOS IC 2.63V 2.93V 3.08V 3.65V 4.00V 4.38V 4.63V 6 (V RTH ) 2.4V 5.0V V CC (L ow ) ( ) V CC ( ) IC SOT23-5 1 : 2.63V 2.93V 3.08V 3.65V 4.00V
Distributeur : JBG-METAFIX
CL-7IR-X (.x.5x.mm) Lead-free RS-4 (.65x7.5x.75mm) Lead-free PR- (.5x.375x.6 mm) Lead-free P.7 P.4 P.35 CL-9IRS-X (x.8x.8mm) Lead-free RS-47 (3.x4.5x.mm) Lead-free CPT-3 (3.xx.mm) Lead-free P.8 P.6 P.37
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お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
圧電型加速度センサ Piezoelectric Acceleration sensor 特長 Features 圧電素子に圧電型セラミックを用いた加速度センサは 小型堅牢 高感度で広帯域を特長としております 従って 低い周波数の振動加速度から衝突の様な高い加速度の測定まで 各分野で 幅広く使用されて
圧電型加速度センサ 小型タイプ φ3.5 5.85 2.5(H)mm 加速度 MAX100,000m/s 2 高温タイプ MAX250 小型 3 軸タイプ 8 7 5.5(H)mm Super miniature type φ3.5 5.85 2.5(H)mm 100,000m/s 2 High temperature resistance type MAX250 and Triaxial type
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Wide Temperature Range Version 4M SRAM (256-kword 16-bit) RJJ03C0237-0100 Rev. 1.00 2007.05.24 262,144 16 4M RAM TFT 44 TSOP II 48 CSP 0.75mm 3.0V 2.7V 3.6V 55/70ns max 3µW typ V CC =3.0V 2CS 40 +85 C
LM317A
3 3 LM317A 3 LM317 1.2 37V 1.5A 3 IC 2 / IC AC IC 6 3 LM317 3-Terminal Adjustable Regulator LM117 19860710 33200 24060 11800 ds009063 Increase the print percent on all Typical Curves modified formatting
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Guide for Electret Condenser Microphones A microphone as an audio-electric converting device, whose audio pickup section has a structure of a condenser consisting of a diaphragm and a back plate opposite
LM2940
1A 3 1A 3 0.5V 1V 1A 3V 1A 5V 30mA (V IN V OUT 3V) 2 (60V) * C Converted to nat2000 DTD updated with tape and reel with the new package name. SN Mil-Aero: Order Info table - moved J-15 part from WG row
LTC ビット、200ksps シリアル・サンプリングADC
µ CBUSY ANALOG INPUT 10V TO 10V 2. 2. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 V DIG V ANA PWRD BUSY CS R/C TAG SB/BTC DATA EXT/INT DATACLK DGND SY 28 27 26 25 24 23 22 21 20 19 18 17 16 15 10µF 0.1µF SERIAL INTERFACE
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dynamics operator manual Klark Teknik Klark Teknik Building Walter Nash Road Kidderminster Worcestershire DY11 7HJ England Tel: +44 1562 741515 Fax: +44 1562 745371 Email: klarkteknik.info@uk.telex.com
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NJM88/A ma.µf SOT-89- TO--(NJM88ADL) ESON6-H(NJM88AKH) NJM88U NJM88ADL NJM88AKH (...97mm) 7dB typ. (f=khz, Vo=V ) Vno=µVrms typ..µf (Vo.7V) Io(max.)=mA Vo±.%.8V typ. (Io=mA ) ON/OFF SOT-89-(NJM88U) / TO--(NJM88ADL)
xEffect_SG_MV_Part2_E_xEffect_SG_MV_E
Miniature Circuit Breakers FAZ-NA, FAZ-RT, FAZ-DU SG56912 FAZ-NA/-RT/-DU According to UL 489, CSA C22.2 No. 5 and also IEC 60947-2 standard For Applications, wich are permitted for UL 1077 or CSA C22.2
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LM117,LM317 LM117/LM317A/LM317 3-Terminal Adjustable Regulator Literature Number: JAJSBC1 LM317A/LM317 3 3 LM317A 3 LM317 1.2 37V 1.5A 3 IC 2 / IC AC IC 6 3 LM317 3-Terminal Adjustable Regulator LM117
MAX DS.J
9-83; Rev ; / µ µ PART TEMP. RANGE PIN- PACKAGE TOP M ARK MAX442EXK-T -4 C to +85 C 5 SC7-5 ABH MAX442EUK-T -4 C to +85 C 5 SOT23-5 ADOL MAX443EKA-T -4 C to +85 C 8 SOT23-8 AADR 2..9 SUPPLY CURRENT vs.
ANJ_1092A
Application Note SBAA066 ± ± ± ± µ ± ± ± ± 24 Bits 20/24MSB 2 s f S 768 khz 25 MHz (1) V IH 2.0 5.0 V (1) V IL 0 0.8 V (2) V IH 3.0 0 V (2) V IL 5.0 4.2 V (1) I IH V IH = V DD ±10 µa (1) I IL V IL = 0V
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IEC 61000-4 e 2018 7 23 1 2 2 2 2.1.............. 2 2.2.................. 2 3 IEC 61000-4-2 ( ) 3 3.1...................... 3 3.2..................... 3 3.2.1 ESD........... 3 3.2.2 ESD.............. 3
LM3876
Overture 56W ( ) 8 0.1 (THD N) 20Hz 20kHz 56W SPiKe (Self Peak Instantaneous Temperature ( Ke)) SOA(Safe Operating Area) SPiKe 2.0 V( ) 95dB(Min) SN 0.06 THD N IMD (SMTPE) 0.004 8 56W 100W SN 95dB(min)
LM193/LM293/LM393/LM 回路入り低動作電圧低オフセット電圧コンパレータ
LM193,LM2903,LM293,LM393 LM193/ Low Power Low Offset Voltage Dual Comparators Literature Number: JAJSB74 2 LM293 2.0mV 2 A/D VCO MOS LM293 TTL CMOS LM293 MOS LM393 LM2903 Micro SMD 8 ( 0.3mm) Squarewave
DS90LV047A
3V LVDS 4 CMOS 4 CMOS Low Voltage Differential Signaling (LVDS) 400Mbps (200MHz) TLL/CMOS 350mV TRI-STATE 13mW ( ) PCB ENABLE ENABLE* AND TRI- STATE 4 DS90LV04 A (DS90LV048A ) ECL 1 1 Dual-In-Line 3V LVDS
ja111_rkw.fm
(1/) AC UL/C-UL/TÜV RoHS RRKWW1.5kW No.1 ///1///1.5kW768 EN-3-2W AC.-V EN82-2 FCC-BVCCI-B RV//1.5kW CE H 5F 1W PBDPEsPBBs 24V1W RoHS V W W W 1W A A A A 3.3 7 RKW3-7R 12 RKW3-12R 25 RKW3-25R 35 RKW3-35R
R1RP0416D シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
Products catalog
8 X X 3 X XH 5 X X 7 X XT 9 X H X G, 3 X T 6 X X 8 X 6T X H X G X, F 6 X 3G, 3 8 X 8G, 8 3 X 8H 3 X 8G 3 X 8 36 38 X S X S X 8S 6 X P 8 X, P, N 5 LK,, V 5 G, G3 6 GN, GN 6 G 6 G3W 66 68 J / J P 69 J /
R1RW0416DI シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
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1.0 1. Display Format 8*2 Character 2. Power Supply 3.3V 3. Overall Module Size 30.0mm(W) x 19.5mm(H) x max 5.5mm(D) 4. Viewing Aera(W*H) 27.0mm(W) x 10.5mm(H) 5. Dot Size (W*H) 0.45mm(W) x 0.50mm(H) 6.
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ON/OFF 3mA.µF.V.V DSC/DVC U. V.V (.Vstep) 7dB typ. (f=khz Vo=3V ) Vno=µVrms typ..µf (Vo.V) Io(max.)=3mA Vo±.%.V typ. (Io=mA ) ON/OFF SOT-89-3 U. CONTROL. GND 3. N.C.. V OUT. V IN V IN V OUT Control Bandgap
AUDIOGRAM6 取扱説明書
USB AUDIO INTERFACE Owner s Manual Bedienungsanleitung Mode d emploi Manual de instrucciones Руководство пользователя Русский Español Français Deutsch English EN DE FR ES RU JA (5)-10 1/3 83 84 (5)-10
TOS7200 CD-ROM DUT PC 1.0X p.15 NEMA Vac/10 A [85-AA-0003] m : CEE7/7 : 250Vac/10 A [85-AA-0005] : GB1002 : 250Vac/10A [ ] 2016
![TOS7200 CD-ROM DUT PC 1.0X p.15 NEMA Vac/10 A [85-AA-0003] m : CEE7/7 : 250Vac/10 A [85-AA-0005] : GB1002 : 250Vac/10A [ ] 2016](/thumbs/93/112128441.jpg "TOS7200 CD-ROM DUT PC 1.0X p.15 NEMA Vac/10 A [85-AA-0003] m : CEE7/7 : 250Vac/10 A [85-AA-0005] : GB1002 : 250Vac/10A [ ] 2016")
No. IB028901 Nov. 2016 1. 11 TOS7200 2. 14 3. 19 4. 23 5. 39 6. 49 7. 51 TOS7200 CD-ROM DUT PC 1.0X p.15 NEMA5-15 125 Vac/10 A [85-AA-0003] 1 2.5 m : CEE7/7 : 250Vac/10 A [85-AA-0005] : GB1002 : 250Vac/10A
ma_sk_3302_jp
1 4 1.1............... 4 1. CE.............................. 4 1.3................. 4 1.4........................ 4 4 3 5 3.1........................... 5 3.1.1............................. 5 3.1...........................
AN15880A
DATA SHEET 品種名 パッケージコード QFH064-P-1414H 発行年月 : 2008 年 12 月 1 目次 概要.. 3 特長.. 3 用途.. 3 外形.. 3 構造...... 3 応用回路例.. 4 ブロック図.... 5 端子.. 6 絶対最大定格.. 8 動作電源電圧範囲.. 8 電気的特性. 9 電気的特性 ( 設計参考値 )... 10 技術資料.. 11 入出力部の回路図および端子機能の
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!! !!! !! !! !! !! Dimensions and Lead Style Code Dimensions (mm) L W W1 T F d 0A2/0DB 0K1/0M1 1A2/1DB 1K1/1M1 2A2/2DB 2K1/2M1 3A2/3DB 3K1/3M1 4K1/4M1 5B1/5E1 UB1/UE1 WK1/WM1 2.5 2.5 2.5 2.5-6.0 - - 6.0-7.5
INDEX PAGE 1. Evaluation Method 1 1. 測定回路 Measurement Circuits 3 (1) 静特性 待機電力特性 通電ドリフト特性 その他特性 Steady state, Standby power, Warm up voltage drift and
C268 53 1 1/35 INDEX PAGE 1. Evaluation Method 1 1. 測定回路 Measurement Circuits 3 (1) 静特性 待機電力特性 通電ドリフト特性 その他特性 Steady state, Standby power, Warm up voltage drift and Other characteristics (2) 入力サージ電流 (
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Tokyo Institute of Technology high-k/ In.53 Ga.47 As MOS - Defect Analysis of high-k/in.53 G a.47 As MOS Capacitor using capacitance voltage method,,, Darius Zade,,, Parhat Ahmet,,,,,, ~InGaAs high-k ~
FEEL Prod Grap PH_Artwork_P0A2Q QSG JP A4_ _Rev.1.indd
INTERFACE PRO MIXER SERIES VMX1000/VMX300/ VMX200/VMX100 Professional 2/3/7-Channel DJ Mixer with /Audio Interface, BPM Counter and VCA Control 2 PRO MIXER SERIES VMX1000/VMX300/VMX200/VMX100 3 ¼" TS 1.
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2 Channel, 50 ksps to 200 ksps, 8-Bit A/D Converter Literature Number: JAJSAA2 2 200KSPS 8 A/D 2 8 CMOS A/D 50kSPS 200kSPS / IN1 IN2 1 2 SPI QSPI MICROWIRE DSP 2.7V 5.25V 3V 1.6mW 5V 5.8mW 3V 0.12 W 5V
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CISPR 35 e 2018 3 28 1 1 2 2 2.1 IEC 61000-4-2 ( )......... 2 2.2 IEC 61000-4-3, -4-20, -4-21, -4-6 ( RF )....................... 2 2.3 IEC 61000-4-5 ()............ 2 2.4............. 4 3 4 3.1 EUT............
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LT 高信号レベルアップコンバーティング ミキサ 特長 MHz RF RF IF IP 7dBm 9MHz dbm IF db RF LO dbm LO 二重平衡ミキサ イネーブル機能.V~.Vの単一電源電圧範囲 露出パッド付き ピン TSSOPパッケージ アプリケーション CATV ダウンリンク インフラストラクチャ ワイヤレス インフラストラクチャ 高直線性ミキサ アプリケーション 概要 LT
R1LV1616H-I シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
I N D E X PAGE 1. イミュニティ試験結果サマリ R-1 Summary of Immunity Test Result
IMMUNITY DATA イミュニティデータ TDK-Lambda A258-58-01B I N D E X PAGE 1. イミュニティ試験結果サマリ R-1 Summary of Immunity Test Result ---------------------------------------------------- -----------------------------------------------------------
INDEX PAGE 1. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC ) 2. 放射性無線周波数電磁界イミュニティ試験 4 Radiated Radio Frequency Electromagnetic F
A278 58 01 1/9 INDEX PAGE 1. 静電気放電イミュニティ試験 3 Electrostatic Discharge Immunity Test (IEC61000 4 2) 2. 放射性無線周波数電磁界イミュニティ試験 4 Radiated Radio Frequency Electromagnetic Field Immunity Test (IEC61000 4 3) 3.
PA M01 LITEON SPEC Rev A
規格書 Electrical Specification Model No: PA-1360-5M01 Description: 12V 36W single output AC adapter Revision: A Issued Date: May 21, 2013 Customer Part No.: 90, Chien I Rd, Chung Ho city, Taipei Hsien 235,
INDEX PAGE 1. Evaluation Method 1 1. 測定回路 Measurement Circuits 3 (1) 静特性 待機電力特性 通電ドリフト特性 その他特性 Steady state, Standby power, Warm up voltage drift and
C267 53 1A 1/35 INDEX PAGE 1. Evaluation Method 1 1. 測定回路 Measurement Circuits 3 (1) 静特性 待機電力特性 通電ドリフト特性 その他特性 Steady state, Standby power, Warm up voltage drift and Other characteristics (2) 入力サージ電流 (
uPC2709T DS
Bipolar Analog Integrated Circuit 5 VIC BS/CS1 stific NESAT TM ft = 20 GHz IC fu = 2.3 GHz TYP.3 db POsat= 11.5 dbmf = 1 GHz, VCC = 5.0 V0.5 V GP = 23 db TYP.f = 1 GHz 50 Ω BS/CS1 stif BS/CS1 stif -E3