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1 4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( )

2 ) ( ) ( 34,3 (1995))

3 (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )

4 166 (, 2005/4/11) (, 2005/4/11)

5

6 (T.Norimatsu, IEEJ Trans. SM, 125 (2005) 350) (T.Norimatsu, IEEJ Trans. SM, 125 (2005) 350)

7 ( ) (Samsung) DMD (Digital Micromirror Device)

8 DMD (Digital Micromirror Device) ( ) DMD V.Kessel et.al., Proc.IEEE, 86 (1996)

9

10

11 (1975) 50m 10m GLV 2005 (6 ) ( )( ) 2005/5/2

12 GLV (Grating Light Valve) (R.B.Apte, D.M.Bloom et.al.,solid-state Sensor and Actuator Workshop, Hilton Head (1994) p.1) 1920 / sec GLV(Grating Light Valve) HDTV (MEMS & (CQ )p.189 )

13 GLV 4000:1 (S.R.Kubota ( ), Optics & Photonics News, Sept.2002, p.50) (Y.Ito et.al.( ), SPIE Photonics, West, Jan. 2006)

14 (K.Saruta et.al. ( ), MEMS 2006, p.842) GLV CTP (Computer-To- Plate) ( ) (MEMS & (CQ )p.189 )

15 10 m

16 CRT FED (Field Emission Display) Optronics, Vol.10, No.202 (1998) p.145 (Trigger, )

17 HARP HARP(High-gain Avalanche Rushing amorphous Photoconductor) ( NHK 99 (2004.3) p.11) (N.Asada et.al., IEEE Trans. on Magnetics 30 (1994))

18 (Y.Mizoguchi ( ) Transducers 05, p.65) (Y.Mizoguchi ( ) Transducers 05, p.65)

19 Micromirror Cells for Laser Display Systems 1. Eigenmode: 4600 Hz 4. Eigenmode: 24.2 khz (Jan Mehner (Fraunhofer Inst. IZM ( )))

20 Nomad Expert Technical System (J.R.Lewies : IEEE Specrrum, May 2004 p.16) 2mm ( (1998))

21

22 (400 ) ( ) 20nm 517Gbits/inch) IBM Millipede (IEEE Spectrum, 2005 March, 26-33) (200 ) ( ) (D.W.Lee et.al., J. of Microelectromechanical Systems, 11, 3 (2002), )

23 V Ni 270pA 27pA 0 2 µm A GeSbTe

24 (D.W.Lee et.al., J. of Microelectromechanical Systems, 11, 3 (2002), ) (J.H.Bae et.al., Applied Physics Letters, 82 (2003), pp )

25 (J.H.Bae, Diamond and Relared Materials, 12 (2003), p.2128) Si nm

26 CVD N N S + Pr - Pr + N ~50nm Bloch wall Pr High density Single lattice domain wall N N N N N N S S S S S S N N N N N N S S S S S S N N N N N N S S S S S S Magnetic poralization can be detected Detection is difficult because of electrical shielding

27 Diamond Probe for Ultra-High-Density Data Storage Based on Scanning Nonlinear Dielectric Microscopy H.Takahashi (Pioneer Corp.), T.Ono, Y.Cho and M.Esashi(Tohoku Univ.) (MEMS 04 (2004) p.536) T.Ono et.al., Nanotechnology, 14 (2003) pp )

28 H 2 N H SH 2 N (NH4)2S2O8 NH 2 NH 2 NH 2 N N N S S S Au NH NH NH S S S Au 7nm H H N N N N n N N N N n H + H H +2e - 30

29 5µm 5µm 5µm Conductive Insulating (Substrate) Bit size nm 4µm 4µm (S.Yoshida et.al., Nanotechnology, 16 (2005) p.2516) (T.Ono, K.Iwami, Jap. J. of Applied Physics. 44, 14 (2005) L445-L448)

30 442nm He-Cd Laser Photo Multiplier Ag v AC Sample Bow-tie Probe XYZ Scanner Signal Controller & Display Lock' in Amplifier Reference NSOM XYZ ( ) XYZ ( ) (D.-Y.Zhang et.al., Digest of Technical Papers, Transducers 03, Boston (2003) ) H.Xu, Proceedings of the 21th Sensor Symposium, Kyoto, (2004-Oct ), 13-18

31 ( ) (N.Sato et.al. (NTT), Proc. the 20th Sensor Symposium, (2003) p.323)

32 MEMS ( ) ( (NHK )

33 ( FHD (Frame Hydrolysis Deposition)) (T.Tajima et.al., Micro and Nanoengineering 2002 Internal. Conf., Lugano Switzerland (2002))

34

35

36 ( ) (,, Vol.87 (1999) p.713)

37 ( ISDN (1989) ) (,, Vol.87 (1999) p.713)

38 +/- 5 motion on each axis. ~ 150V drive voltage < 5msec switching time. 2

39

40 ( )

41 ( FHD (Frame Hydrolysis Deposition))

42 (M.Hoffmann )

43 (L.P.Boivin, Applied Optics, Vol.13 (1973) p.391) λ1 VOA MUX Optical fiber DMUX PD λ2 VOA PD λ3 VOA PD Optical Amp λn VOA PD dβ dβ dβ µm µm µm VOA VOA;Variable Optical Attenuator (DWDM)

44 500 µm 70 µm 525 µm off on Array-VOA SEM Array-VOA ( )

45 30 m RF ( ) RF ( ) ( )

46 RFMEMS

47

48 (Y.Liu et.al., MEMS 01)

49 <160mW (6V ) on <0.3 <3ms V-15mA 20GHz 5mm MEMS ( ) ( ) SEMICON JAPAN 4mm (J.Oberhammer et.al., MEMS 2006 p.162)

50 ( ) MEMS MEMS (J.Chao, Int l Conf. Millimeter Submillimeter Waves and Applications (1994))

51 RF ( : ) ( )

52

53 ( ) LC [Q ] [ ] [ MEMS GHz ] (SAW : Surface Acoustic Wave) GHz ( ) (FBAR : Bulk Acoustic Wave) GHz

54 FBAR FBAR

55 Agilent FBAR AlN (AlN 300 ) AlN (M.Hara, IEEE MTT-S Internl. Microwave Symposium (2003) p.1797)

56 FBAR (L.Elbrecht et.al.(infinion Tech.),2004 IEEE MTT-S,(2004) p.395) 400MHz 1 (H.Satoh (Toshoba), 1987 Ultrasonic Symposium, pp )

57 ( No.895, ) (J.Wang et.al.( ), Transducers 03 (2003) p.947)

58 ( ) ( ) (UC )

59 AlN ( ) (G.Piazza et.al.(u.c.berkeley), MEMS 2005, p.20) Harmonic Devices, Si (S.A.Bhave & R.T.Howe, Transducers 05, p.2139)

60 High K (HfO) (H.Chandrahalim et.al,mems 2006, p.894) (H.Chandrahalim et.al,mems 2006, p.894)

61 AFM (E.P.Quev, R.T.Howe et.al., MEMS 2006, p.234) (E.P.Quev, R.T.Howe et.al., MEMS 2006, p.234)

62 (W.-T.Park, T.W.Kenny, MEMS2005, p.347) Poly-Si Si MEMS ( CMOS ) (A.Partridge ( SiTime) et.al., SEMI 9 /MEMS (2005/11/7))

63 ( ) (A.Partridge ( SiTime) et.al., SEMI 9 /MEMS (2005/11/7)) (Wan-Thai Hsu (Discera). From micromechanical resonators to fully integrated transceivers 8 SEMI MEMS 12 2 )

64 (, 7th Symp. on Microjoining and Assembly Technology in Electronics, (2001), )

65 Si ( (2005,3) ) ) Deep RIE SiO 2 O 3 TEOS CVD Trench Si refill

66 P.W.Barth, Micromachining and Micropackaging of Transducers, (ed. C.D.Fung) Elsevier Sci Pub., (1985) p.189

67 Micro Zero-Insertion-Force (ZIF) Connector (Y.Zhan ( ), WIMS ERC Annual Report 2002, p.124)

68 ( )

69 (A.K.Mallik, J.of Microelectromechanical Systems, 4,3 (1995) p.119)

70 Capillary pumped loop (K.Pettigrew et.al., MEMS 2001, p.427)

) ( ) ( 34,3 (1995))

) ( ) ( 34,3 (1995)) 4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( ) ) ( ) ( 34,3 (1995)) (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )

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