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- かんじ なかじゅく
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3 Akira Fujishima 2005.Vo.3 1
4 Kiyoshi kanamura Vol.3
5 Rechargeable Lithium Ion-Battery Active Material Liquid Electrolyte σ = S cm -1 3D Interface of Solid / Liquid Binding Material 2005.Vol.3 3
6 (CH 3 ) 2 CHOH (20) (Molar Ratio) CH 3 COOH (10) Ti(OCH(CH 3 ) 2 ) 4 (1) H 2 O (140) CH 3 COOLi (0.35) La(CH 3 COO) H 2 O (0.55) Li-La-Ti-O Sol Vol.3
7 2005.Vol.3 5
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10 Vol.3
11 Three-dimensionally ordered macroporous (3DOM) silica silica membrane Polymer Electrolyte H + Porosity 74% Matrix Polymer expansion is mechanically suppressed by porous silica matrix. Proton conductor (liquid, polymer) Ordered macroporous silica matrix Low methanol cross-over High proton conductivity 2005.Vol.3 9
12 Vol.3
13 Current Density [ma/cm 2 ] After polymerization Before polymerization Potential [V vs. Ag/AgCl] 2005.Vol.3 11
14 Vol.3
15 Tsuyoshi Kijima Vol.3 13
16 AFM Vol.3
17 SBH Tween Vol.3 15
18 0.5M H2SO4 SBH SBH/Pt 10 SBH Vol.3
19 0.5M H2SO4 SBH 0.6V 0.75V Johnson Matthey HiSPEC 4000 に 1g SBH/Pt 10 AFM Tween60 (HOPG) AFM Tween60 Tween60 HOPG 2005.Vol.3 17
20 OH R F (CTAB) RF NaOH RF /CTA 250 (TMB) 80 2 (H + ) RF Vol.3
21 ( ) 2005.Vol.3 19
22 Vol.3
23 Akihiko Kudo 2005.Vol.3 21
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25 2005.Vol.3 23
26 Vol.3
27 m 2005.Vol.3 25
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32 Vol.3
33 Hideomi Koinuma Vol.3 31
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40 1. H. Koinuma & I. Takeuchi. "Combinatorial solid-state chemistry of inorganic materials". Nature Materials 3, 429 (2004). 2. A. Tsukazaki et al. "Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO". Nature Materials 4, 42 (2005). 3. Y. Matsumoto et al. "Room-temperature ferromagnetism in transparent transition metal-doped titanium dioxide". Science 291, 854 (2001). 4. Y. Yamamoto et al. "Homo-epitaxial growth of rutile TiO2 film on step and terrace structured substrate". Appl. Surf. Sci. 238, 189 (2004). 5. T. Koida et al. "Temperature-gradient epitaxy under in situ growth mode diagnostics by scanning reflection high-energy electron diffraction". Appl. Phys. Lett. 80, 565 (2002). 6. M. Sumiya et al. "SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition". Appl. Surf. Sci. 223, 206 (2004). 7. M. Sumiya & S. Fuke. "Effect of treatments of sapphire substrate on growth of GaN film". Appl. Surf. Sci. 244, 269 (2005). 8. K. Itaka et al. "Combinatorial approach to the fabrication of organic thin films". Appl. Surf. Sci. 252, 2562 (2006). 9. J. Yamaguchi et al. "An in-situ Fabrication and Characterization System Developed for High Performance Organic Semiconductor Devices". Jpn. J. Appl. Phys. 44, 3757 (2005). 10. K. Arai et al. "Fabrication of liquid crystal polymer films and their passivation effect for organic devices". Jpn. J. Appl. Phys. 44, 4164 (2005). 11. T. Edura et al. "Electrical characterization of single grain and single grain boundary of pentacene thin film by nano-scale electrode array". Curr. Appl. Phys. 6, 109 (2006) Vol.3
41 Kunihito Koumoto Vol.3 39
42 Vol.3
43 2005.Vol.3 41
44 Vol.3
45 m m 2005.Vol.3 43
46 Vol.3
47 2005.Vol.3 45
48 Takayoshi Sasaki Vol.3
49 0.5H 2005.Vol.3 47
50 Bednorz Müller Vol.3
51 2005.Vol.3 49
52 Vol.3
53 2005.Vol.3 51
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55 2005.Vol.3 53
56 Vol.3
57 Yoshihiro NakatoSasaki Vol.3 55
58 μ current density / ma cm -2 voltage[v] Vol.3
59 2005.Vol.3 57
60 Vol.3
61 2005.Vol.3 59
62 Vol.3
63 μ μ μ 2005.Vol.3 61
64 Vol.3
65 Kaname Matsumoto Vol.3 63
66 B=μ Vol.3
67 - α /2 ξ 2005.Vol.3 65
68 d ( θ ) を比較したものである θ = 90 (B//c) に現れる鋭い J Vol.3
69 ε ( θ )=[cos θ + γ θ ] ( θ )=B (0)/ ε ( θ ) と表わされる ( θ ) d 2005.Vol.3 67
70 d Vol.3
71 d μ m 厚程度作製することで得られる これらの SmBCO 膜は 350 酸素気流中でアニール処理を施した d 2005.Vol.3 69
72 d μ m 厚 μ m Vol.3
73 Junichi Yamaki Vol.3 71
74 Vol.3
75 2005.Vol.3 73
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77 2005.Vol.3 75
78 Vol.3
79 2005.Vol.3 77
80 Tamio Ikeshoj Vol.3
81 2005.Vol.3 79
82 Vol.3
83 2005.Vol.3 81
84 K. Okazaki et al., Appl. Catal. A (2005) Vol.3
85 Pt10/Graphen The Pt-H bond length 1st 2nd 3rd 3.02Å 3.26Å 3.30Å Valence electron density distribution 2005.Vol.3 83
86 [2] M. Otani and O. Sugino, to be published in Phys. Rev. B (2006) Gröthuss Gröthuss Vol.3
87 2005.Vol.3 85
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スライド 1
Matsuura Laboratory SiC SiC 13 2004 10 21 22 H-SiC ( C-SiC HOY Matsuura Laboratory n E C E D ( E F E T Matsuura Laboratory Matsuura Laboratory DLTS Osaka Electro-Communication University Unoped n 3C-SiC
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