ナノテクノロジ

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ゆきひらまるこ
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Nanotechnology 10 1 HEMT 201 2000 12 Abstract Since former President Clinton announced the National Nanotechnology Initiative, nanotechnology

It has attracted much attention because it will enable mankind to control things on a nanometer (1/1,000,000,000-meter) scale.

Since inventing the high electron-mobility transistor (HEMT) 20 years ago, Fujitsu Laboratories has been a leader in researching and developing

For instance, a quantum-dot memory based on controlling single electrons and a terabit optical memory based on a new principle of operation have

1 Nanotechnology 10 1 HEMT Abstract Since former President Clinton announced the National Nanotechnology Initiative, nanotechnology has become a well-known field. It has attracted much attention because it will enable mankind to control things on a nanometer (1/1,000,000,000-meter) scale. The benefits it promises should find wide application, bringing technological innovations to many materials and many industrial fields. Since inventing the high electron-mobility transistor (HEMT) 20 years ago, Fujitsu Laboratories has been a leader in researching and developing nanotechnologies for application to semiconductors. It is currently at the forefront of research into quantum dots. For instance, a quantum-dot memory based on controlling single electrons and a terabit optical memory based on a new principle of operation have been demonstrated. In this report, we describe our recent work on quantum-dot technologies and introduce the research plan of the Nanotechnology Research Center, established in December 2000 and designed to extend Fujitsu s nanotechnologies from semiconductors into other fields. FUJITSU.52, 4, p (07,2001) 391

10 5 0-5 Dotn=1 Dotn=2 Well 0 10 20 30 40 50 磁場 (T) フォトルミネッセンスピークの磁場依存性 ( 東大物性研三浦教授の協力による ) <111>B 20 nm <211> <011> TSR 内のIn/

2 30nm SiMOSFET 0.8 nm x y z 1 10 nm 1 DNA (111)B 面基板上の正四面体溝アレー ( 平面図 ) (EB 描画は電総研の協力による ) In In substrate 原料反磁性シフト (mev) Dotn=1 Dotn=2 Well 磁場 (T) フォトルミネッセンスピークの磁場依存性 ( 東大物性研三浦教授の協力による ) <111>B 20 nm <211> <011> TSR 内のIn/ 成長層の断面 TEM 写真 Y. Sakuma et al., ISCS 94, Y. Sakuma et al., Solid State Electron., , p.1341, In TSR Fig.1-In Tetrahedral-Shaped Recess (TSR) Quantum Dot (QD) and the diamagnetic shift of PL peaks from the QD. 392 FUJITSU.52, 4, (07,2001)

TSR (1) (111)B -1In/ In In TSR -1 (2) Well Dot SK SK Stranski-Krastanov InAs InAs InAs TSR 1 HEMT -2 150 K (3) 1 1 V 1 (4)

3 TSR (1) (111)B -1In/ In In TSR -1 (2) Well Dot SK SK Stranski-Krastanov InAs InAs InAs TSR 1 HEMT K (3) 1 1 V 1 (4) 10-3 (5) s 190 s -2 K Fig.2-Structure and memory operation of a Single TSR-QD memory. FUJITSU.52, 4, (07,2001) 393

4 -3 TSR77 K Fig.3-Optical writing characteristics of TSR-QD memory and control of the number of charges stored in QD. YAG/YLF レーサによる 2 波長書き込み実証 80 K までホールバーニング効果を観測波長多重度 ~3300(@5 K) S. Muto JJAP 34, L210, 1995 Y. Sugiyama et al, IEDM 98, p.445, SK 2 Fig.4-Operation principle of SK Quantum Dot memory and optical writing characteristics by two different wavelengths. 290 s -3 1 TSR CMOS SK (6) FUJITSU.52, 4, (07,2001)

5 SK-InAs 5 80 K , K InAs /GaSb -5 (7) GaSb InAs LB 9 ML InAs GaSb InAs-5 43 ML9 ML 0.1 to 0.15 ev * ) 1.26 ev 1.1 ev 1.22 ev InAs QDs L B = 9 ML GaSb MLQW E C E V PL intensity (arb. units) L B InAs SK dots barrier GaSb WL K ~1.1 ev L B = 43 ML L B = 9 ML Photon energy (ev) -5 Fig.5-On the left: Band line up of type II Quantum Dots. On the right (up): TEM of the type II Quantum Dots. On the right (down): PL spectra measured for two different thicknesses of tunneling barrier. FUJITSU.52, 4, (07,2001) 395

6 ナノテクノロジー研究センターナノデバイスシステム量子情報通信技術 ( 量子ビット ) ナノマテリアルナノ構造体材料 ( カーボンナノチューブ ) ナノバイオゲノム情報の発現解析技術ポスト IT ITの可能性世界トップ技術利用将来可能性拡大エレクトロニクスにフレークスルーライフサイエンス事業拡大未踏市場の探索 -6 Fig.6-Organization and research subject of the Nanotechnology Research Center established in December, CeNS Center for NanoScience nm 1 10 nm 1 10 nm 1 Y. Sugiyama et al. Novel In/ quantum dot structures formed in tetrahedral-shaped recesses on (111)B substrate using metalorganic vapor phase epitaxy Appl. Phys. Lett Vol.67 p Y. Sakuma et al. Magneto-Photoluminescence Study 396 FUJITSU.52, 4, (07,2001)

7 of Quantum Dots Formed on Tetrahedral-Shaped Recesses Solid State Electron. vol.42 no.7-8 p M. Shima et al. Tetrahedral-shaped recess (111)A facet Al/In heterojunction fieled-effct transistor with an In floating quantum dot gate IEEE Trans. ED47 p M. Shima et al. Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate Appl. Phys. Lett Vol.77 p M. Shima et al. Optical modulation of stored charges in single floating quantum dot gate field-effect transistor memory cell Technical Digest of ISCS Th-C Y. Sugiyama et al. Spectral Hole Burning of InAs Self-Assembled Quantum Dots Written by Two Different Lasers Technical Digest of IEDM p M. Yamaguchi et al..inas Self-Assembled Quantum Dots Coupled with GaSb Monolayer Quantum Well Tech. Digest of SSDM p FUJITSU.52, 4, (07,2001) 397

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技術創造の社会的条件 1999 10 21 21 i ... 1 1... 3 1-1. 20...3 1900 1945 3 1945 198x 4 198x 1999 5 1-2....7 1945 198x 7 HEMT 8 198x 1999 9 9 1-3....11 11 12 13 18 2 New Institutions... 21 2-1....21 22 24 26 2-2....27 28 29