技術創造の社会的条件

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1

2 21 i

3 x 4 198x x 7 HEMT 8 198x New Institutions ii

4 NTT JLM Technology Group NTT

5 2-1 TLO New Institutions

6 GE AT&T 3

7 1932 GE 1937 AT&T x AT&T MOS 2 1 Surface states. 2 Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET. S M O 4

8 MOS 100% Large Scale Integrated Circuits, LSI (Strategic Defense Initiative, SDI) % 16% x National Science Foundation, NSF AT&T IBM DRAM 6 3, 1998 BP 4 National Science Foundation, Science and Engineering Indicators, , p DRAM Dynamic Random Access Memory RAM RAM DRAM 5

9 Intelligent Technology, IT 8 LSI SDI Bayh-Dole Act, Patent and Trademark Act Amendments of IT Information Technology Intelligent Technology IT 6

10 x

11 1980 DRAM GDP HEMT 1980 HEMT HEMT High Electron Mobility Transistor MOS 1970 MOS MOS , p Mobility; 13 E. Yamaguchi, J. Phys. Soc. Jpn., Vol. 57, p (1988). 8

12 1970 MOS MOS HEMT MBE Molecular Beam Epitaxy HEMT 16 HEMT x HEMT Superlattice; 1970 IBM superstructure 15 Modulation doping; 16 T. Mimura, S. Hiyamizu, T. Fujii and K. Nanbu, Jpn. J. Appl. Phys., Vol, 19, p.l225-l227 (1980). 17 D. C. Tsui, H. L. Stormer and A. C. Gossard, Phys. Rev. Lett., Vol. 48, p (1982). 18 NHK 9

13 (a) (b) NEC NTT : (a) (b) a b NTT 20 NEC NTT NEC

14 80 DRAM %

15

16 1 1 Technology Licensing Organization, TLO CASTI NUBIC

17 (a) J8 NTT A B C (b) J8 NTT A B C 2: (a) (b) (a) B 3.6 A 0.1 C

18 (a) NTT H L (b) : (a) (b) ( ) E NTT H L IT 8 27 J C 0.1 C ,000 84,300 2, ,000 1, ,200 6,

19 2(b) IT NHK 2(a) 2 A 3.6 IT IT B 0.6 B A 1 1 B C 32 3(a) 3(b) 3(b) ( x 1/2 3(a) H 0.1 L %

20 2(a) 2.5 H 1 3(b) ( x 1/2 H 0 4: E x 10% 22% (a) 3(b) NHK L L L J8 33 J J IBM IBM 33 U.S. Patent and Trademark Office, Technology Assessment and Forecast Report, September

21 ; (1) Univ. California, (2) MIT, (3) Univ. Texas, (4) Stanford Univ., (5) Wisconsin Univ., (6) Caltech., (7) Iowa State Univ., (8) Cornell Univ., (9) Univ. Minnesota, (10) Johns Hopkins Univ. 18

22 1 1 University spin-off companies 19

23 4 20

24 2 New Institutions , Vol. 68, p (1999) 21

25 A X SA 5: A= ; X= ; SA= 1-3 A SA (Superior A) A X A A X SA HEMT A MOS 22

26 MOS MOS A A X X X A SA A X SA HEMT X SA SA A X X SA 2 X SA A X X B C B X SB C X SC X X X A X X SA 3 X A B C A X X SA 2 A X SA A SA X HEMT 23

27 X MBE A HEMT A SA X SA A X SA A SA X

28 A X SA A SA X 3 25

29 38 A X A X X A B X SB X SA X SB X X New Institutions EPSRC 39 industry/university partnership The Engineering and Physical Sciences Research Council; (2-2 )

30 CASE Co-operative Awards in Science and Engineering Academic supervisor Industrial supervisor 2 CASE CASE student X X SA CASE student EPSRC EPSRC

31 Institute for New Generation Computer Technology, ICOT KL1 PIM PIMOS 1980 A IBM B 28

32 C C 15 B C B C National Institute of Health, NIH Defense Advanced Research Project Agency, DARPA National Science Foundation, NSF 43 5,, Vol.79, p (1996). 29

33

34 44 NIH , p NIH

35

36 Licensing Associates

37

38 35

39 36

40 A X X X SB SA B 6: New Institutions A,B= ; X= ; SA,SB= 1-2 PCB, 6 New Institutions A B A SA X SB 37

41 38

2006122 2/13

2006122 2/13 2006122 HEMT IT 1/13 2006122 2/13 2006122 3/13 2006122 4/13 2006122 5/13 2006122 Dingle 9 GaAs 6/13 2006122 7/13 2006122 8/13 2006122 9/13 2006122 10/13 2006122 4 11/13 2006122 GaAs MOSFET HEMT HEMT MBE

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