光学

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ぜんすけすみい
5 years ago
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1 Si Nano-Photodiode with Surface-Plasmon Antenna Junichi FUJIKATA, Keishi OHASHI and Toru MOGAMI We studied the surface plasmon SP resonance effect on Si nano-photodiode PD characteristics for future optical interconnections on LSI chips. We designed an SP antenna which converts input light into SP polaritons and localizes light power on the subwavelength area, and developed a very efficient and very fast Si nano-pd which consists of the SP antenna and a small Si absorption layer. We also developed a waveguide-integrated Si nano-pd with an SP antenna for on-chip optical clock distribution. The interfacial periodic nano-scale metal-semiconductor-metal Schottky electrodes were shown to function as an SP optical antenna and also as an optical coupler between a SiON waveguide and a very thin Siabsorption layer. A very high speed response as well as enhanced photoresponsivity was achieved for a 10-mm coupling length. By using this technology, we fabricated a prototype of a large-scale-integration LSI on-chip optical clock system and demonstrated 5 GHz of optical clock circuit operation connected with a 4-branching H-tree structure. Key words: photodiode, silicon photonics, surface-plasmon, nano-photonics, optical waveguide VLSI Si CMOS complementary metal oxide semiconductor LSI CMOS Si LSI 1 6 Si 7 10 Gbit/s InGaAs avalanche photo diode; APD GaAs pin pin-pd Si CMOS Si j-fujikata@cj.jp.nec.com MIRAI-Selete

2 «hole grating metal 1 a b 8 Si LSI Si Ebbesen Bethe aperture theory 12 1 a hole array b Incident side Output side 2 a b 2 finite-difference time-domain method; FDTD a b beaming Si

300 nm SiO 2 n-si n + -Si Ti/Au Ag Cr SiO 2 1 m (c) 3 13 Cr/Ag SiO 2 2 Si 3 Si 1/e 850 nm Si 1 4 SEM Si SEM Si 200 nm Ag 560 nm 50 nm SiO 2 300

3 300 nm SiO 2 n-si n + -Si Ti/Au Ag Cr SiO 2 1 m (c) 3 13 Cr/Ag SiO 2 2 Si 3 Si 1/e 850 nm Si 1 4 SEM Si SEM Si 200 nm Ag 560 nm 50 nm SiO nm Si 10 nm Cr SiO 2/Ag a b SEM c Si SEM n eff e m e d/e m e d 1/2 1 n eff e m e d 560 nm 840 nm nm 1 mw 2 3 m Si Si

4 Input light of TM polarization 1.1 m Ag nano-electrode embedded in Si SiON waveguide SiO 2 clad SiON waveguide Si nano-photodiode Optical coupling by nano-scale Ag MSM electrodes 1.0 (c) 300 nm 200 nm 0.1 ff 10 7 cm/s ps 80 GHz LSI LSI SiON Si Si 6 a Ag MSM metal-semiconductor-metal FDTD 240 nm Si 90 nm 30 nm Ag SiON Si 850 nm TM SiON 6 b c SiON Si Ag-MSM SiON vertical mode horizontal mode m a Si b c 850 nm TM SiON 14 7 Si nm Si 7 Si Si Si Ag Si nm 60 Si Ag-MSM SEM 8 a b Si n-type SOI silicon-on-insulator 10 mm LOCOS local oxidation of silicon Si EB electron beam Ag-MSM SiON SiO 2 8 c Si 850 nm 1.6 mw SiON 10 TE 2 3 SiON Si 10 mm 4 ff

5 8 a Si b Ag-MSM SEM c 14 9 a b 1V dc c dc Si 9 a 1 2 MMI multi-mode interference Si 9 b c Si 1 V dc dc 780 nm 2 ps 65 GHz Si 1 V 17 ps dc 15 ps Si CMOS 10 a b LSI SEM LSI Cu LSI 10 c Si TIA trans-impedance amplifier Optical clock signal input (c) Optical chip 1mm PD PMOS LSI chip Vout (d) SiON WG LSI chip 100mV Si nano-pd Cu via Solder bump 10 m 100ps 10 a LSI b SEM c d 5 GHz LSI d 5 GHz LSI 850 nm 4 mw CW 5 GHz 4 LSI VLSI Si-CMOS Si

6 Si Si Si Si LSI Si TIA LSI LSI NEC NTT NEDO MIRAI 1 Si-LSIs K. Wada, H.-C. Luan, D. R. C. Lim and L. C. Kimerling: Onchip interconnection beyond semiconductor roadmap: Silicon microphotonics, Proc. SPIE, G. T. Reed and A. P. Knights: Si Photonics John Wiley & Sons, Chichester, D. A. B. Miller, A. Bhatnagar, S. Palermo, A. Emami- Neyestanak and M. A. Horowitz: Opportunities for optics in integrated circuits applications, International Solid-State Circuits Conference ISSCC Digest of Technical Papers J.-F. Zheng, F. H. Robertson, E. Mohammed, I. Young, D. Ahn, K. Wada, J. Michel and L. C. Kimerling: On-chip optical clock signal distribution, Tech. Dig. OSA Topical Meeting on Optics in Computing 2003 p K. Ohashi, J. Fujikata, M. Nakada, T. Ishi, K. Nishi, H. Yamada, M. Fukaishi, M. Mizuno, K. Nose, I. Ogura, Y. Urino and T. Baba: Optical interconnect technologies for high-speed VLSI chips using silicon nano-photonics, International Solid- State Circuits Conference ISSCC Digest of Technical Papers S. Donati: Photodetectors Prentice Hall PTR, New Jersey, T. W. Ebbesen, H. J. Lezec, H. F. Ghaemi, T. Thio and P. A. Wolf: Extraordinary optical transmission through sub-wavelength hole arrays, Nature, H. Rather: Surface Plasmons on Smooth and Rough Surfaces and on Gratings Springer-Verlag, Berlin, R. W. Wood: Anomalous diffraction gratings, Phys. Rev., R. Sambles: Photonics: More than transparent, Nature, T. Ishi, J. Fujikata, K. Makita, T. Baba and K. Ohashi: Si nanophotodiode with a surface plasmon antenna, Jpn. J. Appl. Phys., L364 L J. Fujikata, K. Nose, J. Ushida, K. Nishi, M. Kinoshita, T. Shimizu, T. Ueno, D. Okamoto, A. Gomyo, M. Mizuno, T. Tsuchizawa, T. Watanabe, K. Yamada, S. Itabashi and K. Ohashi: Waveguide-integrated Si nano-photodiode with surface-plasmon antenna and its application to on-chip optical clock distribution, Appl. Phys. Express, A. Gomyo, J. Ushida, J. Fujikata, D. Okamoto, K. Nishi, K. Ohashi, T. Tsuchizawa, T. Watanabe, K. Yamada and S. Itabashi: Low optical propagation-loss SiON/SiO 2 waveguides around 800-nm wavelength, Ext. Abst. Jpn. Soc. Appl. Phys p-R T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi and H. Morita: Microphotonics devices based on silicon microfabrication technology, IEEE J. Sel. Top. Quantum Electron., J. Ushida, A. Gomyo, J. Fujikata, D. Okamoto, K. Nishi, K. Ohashi, T. Watanabe, T. Tsuchizawa, K. Yamada and S. Itabashi: A study on the design and properties of an SiON/SiO 2 waveguide: The effect of the substrate on propagation loss, Ext. Abstr. Solid State Devices and Materials 2007 p T. Tsuchizawa, K. Yamada, T. Watanabe, H. Fukuda, S. Itabashi, J. Ushida, A. Gomyo, J. Fujikata, D. Okamoto, K. Nishi and K. Ohashi: Low-loss silicon oxynitride waveguides and branches for the 850-nm-wavelength region, 13th Microoptics Conf. Proc p

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