MSM514400E/EL

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ゆきちゃわんや
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1 1 1,08,576-Word x -BiYNAMIC RAM : CMOS 1,08,576 2 CMOS 26/20 SOJ 26/20 TSOP L!"1,08,576!"5V 10%!" : TTL!" : TTL!" : 1,02 16ms 1,02 128ms L-!"!"CAS RAS RAS!"!" : 26/20 300mil SOJ (SOJ26/20-P ) ( :-xxsj) 26/20 300mil TSOP (TSOPII26/20-P K) ( :-xxts-k) xx ) t RAC ns 30ns 15ns 15ns 110ns 68mW ns 35ns 20ns 20ns 130ns 13mW 5.5mW/ 1.1mW(L- バージョン ) 1/1

2 26/20 SOJ 26/20 TSOP K ) DQ1 DQ2 WE RAS A V SS 25 DQ 2 DQ3 23 CAS 22 OE DQ1 DQ2 WE RAS A V SS 25 DQ 2 DQ3 23 CAS 22 OE A0 9 A1 10 A2 11 A3 12 V CC A8 17 A7 16 A6 15 A5 1 A A0 9 A1 10 A2 11 A3 12 V CC A8 17 A7 16 A6 15 A5 1 A A0 A9 RAS CAS DQ1 DQ OE WE V CC V SS 5V 0V : V CC V SS 2/1

3 RAS CAS Timing Generator Timing Generator 10 Address Buffers 10 decoders Write Clock Generator WE OE A0-A9 Internal Address Counter Refresh Control Clock Sense Amplifiers I/O Selector Output Buffers Input Buffers DQ1-DQ 10 Address Buffers 10 Decoders Word Drivers Memory Cells V CC On Chip V BB Generator V SS 3/1

4 V IN,V OUT 0.5 V CC V V CC V I OS 50 ma P D* 1 W T opr 0 70 C T stg C *: Ta = 25 C (Ta = 0 70 C) Min. Typ. Max. V CC V V SS V H V IH 2. V CC *1 V L 0.5 *2 0.8 V : *1. 20ns V CC + 2.0V V CC *2. 20ns 2.0V V SS (V CC = 5V ± 10%, Ta = 25 C, f = 1MHz) Typ. Max. (A0 A9) C IN1 6 pf (RAS, CAS, WE, OE) C IN2 7 pf (DQ1 DQ) C I/O 7 pf /1

5 (V CC = 5V ± 10%, Ta = 0 70 C) MSM5100 /EL-60 MSM5100 E/EL-70 Min. Max. Min. Max. H V OH I OH = 5.0 A 2. V CC 2. V CC V L V OL I OL =.2mA V I LI 0V V I V CC + 0.5V; 0V µa I LO DQ disable 0V V O 5.5V µa I CC1 RAS, CAS cycling, = Min ma 1,2 I CC2 RAS, CAS V CC 0.2V RAS, CAS = V IH ma µa 1,5 RAS I CC3 RAS cycling, CAS = V IH, = Min ma 1,2 I CC5 RAS = V IH, CAS =, DQ = enable 5 5 ma 1 CAS RAS I CC6 RAS = cycling, CAS RAS ma 1,2 I CC7 RAS =, CAS cycling, t PC = Min ma 1,3 I CC10 = 125µs CAS RAS 1µs µa 1,,5 : 1. I CC Max. I CC 2. RAS = 3. CAS = V IH. V CC 0.2V V IH V CC + 0.5V 0.5V 0.2V 5. L- 5/1

6 (1/2) (V CC = 5V ± 10%, Ta = 0 70 C) 1,2,3,11,12 MSM5100 E/EL-60 MSM5100 E/EL-70 Min. Max. Min. Max ns t RWC ns t PC 0 5 ns t PRWC ns RAS t RAC ns, 5, 6 CAS ns, ns, 6 CAS A 35 0 ns OE ns CAS 0 0 ns CAS ns 7 OE ns 7 t T ns 3 t REF ms L- t REF ms RAS 0 50 ns RAS 60 10, ,000 ns RAS P , ,000 ns CAS RAS t RSH ns RAS OE t ROH ns CAS ns CAS 15 10, ,000 ns RAS CAS t CSH ns CAS RAS 5 5 ns CAS RAS t RHCP 35 0 ns RAS CAS D ns 5 RAS ns 6 t ASR 0 0 ns t RAH ns 6/1

7 (2/2) (V CC = 5V ± 10%, Ta = 0 70 C) 1,2,3,11,12 MSM5100 E/EL-60 MSM5100 E/EL-70 Min. Max. Min. Max. 0 0 ns ns RAS t RAL ns S 0 0 ns H 0 0 ns 8 RAS t RRH 0 0 ns 8 t WCS 0 0 ns 9 t WCH ns ns WE OE t OEH ns RAS t RWL ns CAS ns 0 0 ns 10 H ns 10 OE t OED ns CAS t CWD 0 50 ns 9 t AWD ns 9 RAS t RWD ns 9 CAS WD ns 9 RAS CAS C 5 5 ns CAS (CAS RAS) t CSR 5 5 ns CAS (CAS RAS) t CHR ns WE RAS CAS RAS t WRP ns WE CAS RAS t WRH ns WE t WTS ns WE t WTH ns 7/1

8 1. V CC 200µ 8 RAS CAS RAS 2. t T = 5ns 3. V IH t T V IH. 2TTL 100pF 5. D t RAC D D 6. t RAC t RRH H 9. t WCS t CWD t RWD t AWD WD t WCS t WCS t CWD t CWD t RWD t RWD t AWD t AWD WD WD 10. CAS OE WE 11. WE CAS RAS RAS CAS RAS CA0 CA0 2 2 L H H L H L 12. 5ns 8/1

9 MSM5100EL D t CSH t RSH t RAL t ASR t RAH S t RRH t ROH H OE V IH t RAC DQ V OH V OL Open Valid Data-out D t CSH t RSH t RAL t ASR t RAH t WCS t WCH t RWL OE V IH DQ V IH Valid Data-in Open 9/1

10 MSM5100EL t RWC t CSH D t RSH t ASR t RAH t RWL S t CWD t RWD t AWD t OEH OE V IH t OED t RAC DQ V I/OH V I/OL Valid Data-out Valid Data-in 10/1

11 MSM5100EL P t ASR D t CSH t RAH t PC t RHCP t RSH t RAL S H S H S H OE V IH DQ V OH V OL t RAC A Valid Data-out A Valid Data-out Valid Data-out t RRH P D t PC t RHPC t RSH t ASR t RAH t CSH t RAL t WCS t WCH t WCS t WCH t WCS t RWL t WCH DQ V IH Valid * Data-in Valid * Data-in Valid * Data-in Note: OE = 11/1

12 MSM5100EL D t CSH P t PRWC t RSH t ASR t RAH t RAL S t RWD t CWD S WD t CWD S WD t CWD t RWL t RAC t AWD H t AWD A t AWD t ROH A OE V IH t OED t OED t OED DQ V I/OH V I/OL Out In Out In Out In Note: In = Valid Data-in, Out = Valid Data-out RAS C t AS t RA Address V IH DQ V OH V OL Open Note: WE, OE = 12/1

13 CAS RAS MSM5100EL RAS V IH C t CSR C t WR t CHR t WR t WR WE V IH DQ V OH V OL Open Note: WE, OE, Address = D t RSH t CHR t ASR t RAH S t RRH t RAL t ROH OE V IH t RAC DQ V OH V OL Open Valid Data-out 13/1

14 MSM5100EL D t RSH t ASR t RAH t RAL t CHR t WCS t WCH t WR t WR OE V IH DQ V IH Valid Data-in C t CSR t CHR t WTS t WTH DQ V IH Open Note: OE, Address = 1/1

MSM51V18165F

MSM51V18165F 1 電子デバイス MSM51V1165F 1,04,576-Word 16-Bit DYNAMIC RAM : EDO 機能付き高速ページモード 2000 10 MSM51V1165F CMOS 1,04,576 16 4 2 CMOS 42 SOJ 50/44 TSOP 1,04,576 16 3.3V 0.3V LVTTL LVTTL 1024 /16ms EDO!"# $"# $"# 42 400mil