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1 SPring-83 22(2010)730
2
3 MBE PLD MBE 0.002% PLD
4
5 p Π n p n
6 PF PF = S 2 S =V/ΔT V: [V] ΔT: [K] S[V/K], T[K], σ[s/m] TeBi 2 Te 3 (Bi,Se) 2 Te 3 (n-type)
7 Ar KrF Ar gas
8 2. A. 3.
9 c-si a-si InP GaAs 1g (μm) PV(W/g 10 3 t GW Si SiH CuInSe CdTe 2 15 Ge 25 In 20 GaAs In Se Cu Cd Te Ge ,, p.23
10 J SC I-V FF // V V OC 100 η= = V oc J sc FF100 / D s [%] Voc: Jsc: FF: Voc:, Jsc:, FF:, Ds: =100mW/cm
11 2. 3.
12 . Bi-Te (SiO 2 on Si) mj Ar 6.67 Pa 10 Hz shot n-bi 2 Te 3, p-(bi 0.5 Sb 1.5 )Te 3 SiO 2 Si nor p Ar gas KrF
13 Power Factor; PF PF = α 2 α =V/ΔT V: [V] ΔT: [K] α[v/k], T[K], σ[s/m] α (μv/k) σ (S/m) PF (mw/mk) n:bi 2 Te p:(bi 0.5 Sb 1.5 )Te SiO 2 Si nor p ppf p np 235 (53+182) μv/k 8μm1.5 W/mK
14 2. 3.
15 2. 3.
16 . Al,PtAl,Pt PtSiO 2 (SiO 2 on Si) mj Ar Pa 10 Hz (Al,Pt) Ar gas Pt Al PtSiO 2 KrF SiO 2 Si
17 2. 3.
18 p Au n ITO CdS CdTe Au Au
19 10mm Al Pt 5 K/min 700 K 650 K 5 5K/ K/min Ar6.67 Pa 350 K 5 K/min 4.0 Pa 575 K 5 K/min Ar6.67Pa 10mm
20 μvμ (μv / K) (mv) μv (μv / K) (mv) 8.0
21 2. 3.
22 q λa (dt / dx) Ax 1,x 2,x 3 λ 1,λ 2,λ 3 t 1,t 2,t 3 tt 1 +t 2 +t 3 Δt1 Δt 2 Δt3 Δt10 q = = = = = ( x / A) ( x / A) ( x / A) ( x / A) Δt1 + Δt 2 + Δt3 + = ( x / A ) + ( x / A ) + ( x / A ) + Δt = R Δt = R x Δt + R Δt3 + + R t 7 t 8 1.3mm t t 2 t 4 t 5 t 7 t 9 t 1 t 3 t 6 t 8 t 10 t0 ITO CdS CdTe Au e SiO2 Pt Bi-T Au SiO t 1 t 2 t 3 t 4 t 5 t6 t7 x 1 x 2 x 3 x 4 x 5 x 6 x 7 t 8 t 9 x 8 x 9 x 10 x R (m) (W/mK) (K/W) ITO CdS CdTe Au SiO Pt BiTe t 10
23 t 0 t 10 t 0 -t 10 t 7 -t 8 V V / ( t 7 -t 8 ) (μv/k) 235 t t 1 t 4 t 2 t 3 t 5 t t 7 t 9 t 6 t 8 10 t0 IT TO CdS Cd dte u A Si O2 Pt Bi-Te Au SiO t 1 t 2 t 3 t 4 t t 5 t6 t7 72% t t 8 t 9 t 10 x 1 x 2 x 3 x 4 x 5 x 6 x 7 x 8 x 9 x 10
24 Au CdTe CdS SiO 2 SiO
25 (μv/k) W/m
26 2010() 4.3 α (μv) σ (S/m) PF (mw/mk) n:bi 2 Te p:(bi Sb 1.5 )Te p:(bi 0.5 Sb 1.5 )Te α (μv) σ (S/m) PF (mw/mk) n:bi 0.3 Te W/m W/m 2 PFPF mm W/m %
27 2%
28 )
29 1%
30 PFα 2 σ Bi 30Te 70 High PF ()
31 2010() 4.3 α (μv) σ (S/m) PF (mw/mk) n:bi 2 Te p:(bi Sb 1.5 )Te p:(bi 0.5 Sb 1.5 )Te α (μv) σ (S/m) PF (mw/mk) n:bi 0.3 Te W/m W/m 2 PFPF mm W/m %
32 (
µµ InGaAs/GaAs PIN InGaAs PbS/PbSe InSb InAs/InSb MCT (HgCdTe)
1001 µµ 1.... 2 2.... 7 3.... 9 4. InGaAs/GaAs PIN... 10 5. InGaAs... 17 6. PbS/PbSe... 18 7. InSb... 22 8. InAs/InSb... 23 9. MCT (HgCdTe)... 25 10.... 28 11.... 29 12. (Si)... 30 13.... 33 14.... 37
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