AND9009JP - 電気的オーバストレス保護の種類

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1 (TVS) (TSPD) (efuse) TVS 2 USB 2 Figure 1 APPLICATION NOTE Figure 1. Illustration of How Protection Devices Limit Stress to Sensitive Components IC IC IC Figure 2 Figure 2 2 Semiconductor Components Industries, LLC, 2014 June, 2014 Rev. 1 1 Publication Order Number: AND9009JP/D

2 Figure 2 Figure 2. I V Curves for Voltage Clamping and Snapback Voltage Limiting Devices and How They Relate to the Properties of the Circuits They are Protecting I V (TSPD) (GDT) I V Figure 3 0V Figure 3 0V 0V 0.7 V Figure 3 1 Figure 3. Bidirectional and Unidirectional Voltage Clamping Protection Devices with the Range of Safe and Unsafe Conditions for the Circuit Being Protected 2

3 2 Figure 4. Diode Protection Figure 4 np n p n p n p ( ) 0.7 V n p I V Figure 4 n p 1 Figure 4 ( 6V 6V ) TVS ESD9L5.0 ESD9L5.0 Figure 5 ESD9L5.0 2 ESD9L5.0 DC I V ESD9L ESD9L

4 Figure 5. Effective and Actual Schematic of ON Semiconductor s ESD9L5.0, Ultra Low Capacitance Diode Based TVS Device Figure 6 IC ESD9L3.3 ESD7951 ESD7004 USB 3.0 HDMI Figure 7 n p 4 n N1 p P1 n N2 NPN p P2 n N2 p P1 PNP Figure 7 J1 J3 J2 J2 2 I V Figure 7 I V Figure 6. Variety of Diode Based Protection Products Combining Multiple Diodes 4

5 Figure 7. Basic Thyristor Structure and Behavior J2 Figure 8 Figure 8 I V Figure 8. Thyristor Under Negative Voltage 2 Figure 9a Figure 9b 5 (TSPD) SIDACTOR TSPD I V Figure 9c 5

6 Figure 9. Creation of a Bidirectional Thyristor Protection Device TSPD Figure 10 TSPD TSPD TSPD Figure 10. Holding Voltage and Current of a TSPD TSPD xdsl TSPD (MOV) (varistor) (variable ) (resistor ) Figure 11a Figure 11b MOV Figure 11c 6

7 Figure 11. Metal Oxide Varistor and a Symbol Often Used for a Varistor (SMD) ESD ( ) ESD Figure 11 Figure 12 Figure 12 I V Figure 12. Polymer Surge Suppressor 1000 V ESD (GDT) Figure

8 Figure 13 I V GDT GDT GDT 3 2 I V I V Figure 13. Gas Discharge Tube Construction, Electrical Symbols and I V Curves GDT 75 V GDT GDT Table 1 Table 2 Table 1. SUMMARY OF VOLTAGE SUPPRESSION DEVICES Type Protection Mechanism Application Directionality Strategy Transient Voltage Suppressors (TVS) Mix of Forward Bias, and Avalanche and Zener Breakdown Silicon Diodes Surge and ESD Unidirectional or Bidirectional V Clamp Thyristor (TSPD) Turn On of Coupled Bipolar Transistors (SCR) Lightning & Surge Usually Bidirectional Snapback (Crowbar) Metal Oxide Varistor (MOV) Metal Oxide Non-linear Resistance Lightning, Surge & ESD Bidirectional V Clamp Polymer Arcs in Polymer w. Conductive Particles ESD Bidirectional Snapback Gas Discharge Tube (GDT) Arc in Gas Lightning & Surge Bidirectional Snapback (Crowbar) 8

9 Table 2. ADVANTAGES AND DISADVANTAGES OF VARIOUS VOLTAGE LIMITING DEVICES Type Advantage Disadvantage Transient Voltage Suppressors (TVS) Thyristor (TSPD) Metal Oxide Varistor (MOV) Polymer Gas Discharge Tube (GDT) Well Controlled Turn On Voltage Low Resistance in On State Unidirectional and Bidirectional Versions Low Capacitance Versions Available Low Leakage Fast Response High Current Carrying Capability Low Capacitance Versions Available Low Cost Fast Response Very Low Capacitance Low Cost Very High Current Carrying Capability Low Capacitance High Off State Impedance Limited Power Ratings Care Needed in Selection & Design to Avoid Latch-up; Otherwise Power Reset Needed after Surge Event. Slower Turn On than TVS Not Fast enough for ESD Protection High Capacitance High Resistance in On State; Poor Power Dissipation Capability High Turn On Voltage High Resistance in On State Large Size Slow Response Expensive (PTC) (efuse) 4 (efuse) efuse Figure 14 FET FET FET 3 ( ) Figure 14 R S FET (V CC ) FET RDSON VCC FET FET FET FET FET efuse Figure 14. Basic Block Diagram of Primary Electronic Fuse Functions 9

10 (PTC) ( ) efuse dv/dt efuse DC ( ) Figure DC 1 Figure 15. Construction of a Cylindrical Fuse Figure 16 2 Figure 16. Conceptual Drawing of a Circuit Breaker 10

11 (PTC) PTC PTC PTC PTC Figure 17 ( ) PTC PTC PTC PTC PTC PTC Figure 17. PTC Construction Table 3 4 Table 3. SUMMARY OF CURRENT LIMITING DEVICES Type Advantages Disadvantages efuse Fuse Circuit Breaker PTC Precision Automatically or Manually Re-settable Fast Acting Limits Current without Removing Power for Short Duration Over-current Limits Over-voltage Wide Range of Parameters Slow Response Can be Reset Can Double as Switch Self Resetting Inexpensive Requires External Resistor Moderate Cost Single Use Device Large Size Expensive Slow Slow Acting Sensitive to Ambient Temperature Slow to Regain Low Resistive State TVS (ESD) TVS (TSPD) efuse 11

12 ON Semiconductor ON Semiconductor Components Industries, LLC (SCILLC) SCILLC( ) SCILLC SCILLC SCILLC SCILLC SCILLC SCILLC SCILLC SCILLC SCILLC SCILLC SCILLC PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative AND9009JP/D

AND9041JP - NCL30051を使用した高効率 LEDドライバ回路の設計

AND9041JP - NCL30051を使用した高効率 LEDドライバ回路の設計 APPLICATION NOTE 1/6 28% LED (High Brightness LED HB LED) (/W) LED 1 LED LED DC AC AC AC LED LED LED LED 100 LED LED AC LED AC PFC 3 LED AC (Constant Current, CC) LEDLED (Constant Voltage, CV) LED 1Figure