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1 JAIMA :0017: XPS AES TDK -94-
2 KK X X AlK1486.6eV 0.85eV MgK1253.6eV 0.7eV -95-
3 20eV2,500eV 0.35nm 0.35nm CMACylindrical Mirror Analyzer: CHAConcentric Hemisperical Analyzer: CMA CMA CHA CHA
4 AESXPSSIMS Vacuum empty Pa JISZ % -97-
5 SI Pa 1 Pa = 1 N/m 2 hpa TorrTorricellibar psipounds per square inches 10-8 Pa 20 P Z = /scm 2 MT P PaM T K 20 P = 10-4 Pa Z = /scm /cm Pa
6 150 SUS304 SUS316 Ar N 2 XPS O O O 0.1 Pa -99-
7 N S N S ~0.15T + + SUS (a) (b) AES XPS SIMS 0.15 T+6 kv Pa 1000 l/s 10-7 Pa SIMS -100-
8 rpm 1 rpm Pa 1 Pa 10-1 Pa µa ma pa ma -101-
9 B-A Bayard-Albert Gauge X 10-8 Pa PVC
10 Ar X -103-
11 Ar 2 XPS
12 -105-
13 -106-
14 -107-
15 -108-
16
17 100 Au 80 Al O Distance ( µ m) 100 Al Ni O Distance ( µm) Atomic Concentration (%) Atomic Concentration (%) -110-
18 -111-
19 In Aluminum Foil In -112-
20
21 -114-
22 -115-
23 -116-
24 -117-
25 -118-
26 -119-
27 -120-
28 -121-
29 -122-
30 -123-
31 -124-
32 XPS X XPS XPS S/N S/B XPS XPS Figure 1 XPS Figure 2 XPS Wide XPS XPS X Figure 1 Figure 2 XPS Figure 3 C1s XPS -125-
33 Figure 3 Figure 2 C1s Narrow C OF XPS XPS 2 Figure 4 X Figure 4 XPS 2 XPS 10nm Ar+ XPS XPS XPS Physical Electronics1993 G. Beamson & D. Briggs, Surface Spectra Ltd. (U.K) -126-
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Micro- 1 2 0.64 1.27 1 2 3 4 5 6 7 8 9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 1 2 3 4 5 6 7 8 9 10 11 12 13 1.09 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 3 4 J J
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351 351 351 351 13.0 0.0 25.8 1.0 0.0 6.3 92.9 0.0 80.5 0.0 1.5 15.9 0.0 3.5 13.1 0.0 30.0 54.8 18.0 0.0 27.5 1.0 0.0 2.5 94.7 0.0 91.7 0.0 1.3 14.7 0.0 3.8 14.4 0.0 25.0 50.5 16.0 0.0 27.5 2.0 0.0 2.5
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1 5% 4% 11% 8% 13% 12% 10% 6% 17% 6% 8% 4% 6% 6% 2% 17% 17% 12% 14% 16% 6% 37% 11% 17% 35% 2 (N=6,239) 0 200 400 600 800 1,000 1,200 1,400 1,600 1,800 1,585 1,126 950 494 345 296 242 263 191 150 131 116
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