日本電子News Vol.41, 2009
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- そうりん そめや
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1 Vol. 41, 2009 Serving Advanced Technology
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9 Example condition: 6kV, 120uA, 3hr Example Mehod: Back side Ar ion irradiation CP The argon ion beam is parallel to a cross section surface. Ar ion Shield Plate Si Sample CP block
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15 Development of cryo-em: 1 st - 7 th generations 1 st G 1986 Kyoto U 2 nd G PERI 3 rd G Kyoto U Helium stage 4 th G 2001 Harima, Tokyo 5 th G Tokyo 6 th G Kyoto U th G with U-SET system Fourier transforms of Bacteriorhodopsin images Untilted 60
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20 Mem-1 Mem-2 Mem-3 Mem-1 Mem-2 Mem-3 Mem-1 Mem-2 Mem-3
21 Structures of membrane proteins analyzed by cryo-electron microscope with top entry helium stage HK-ATPase MGST-1 AQP0 AQP1 Nature, 407, (2000) Nature, 387, (1997) br EMB J., 28, (2009) Cx26 JMB, 360, (2006) AQP4 Nature, 438, (2005) AChR Nature, 389, (1997) LHC PNAS, 104, (2007) Nature, 458, (2009) by X-ray JMB, 355, (2006) Nature, 423, (2003) Nature, 367, (1994)
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23 (a) (b) (c) (d) (e) (a) (b) (c) (d)
24 (a) (b) (c) (d) (e) Ret(all-trans)-C 60 Ret(11-cis)-C 60 a11-trans
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27 Fig. 8
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29 Abundance RT 19.0 m/z 126 m/z 129 m/z Abundance RT 19.0 m/z 126 m/z 129 m/z S Strecker degradation oxidation C S S S H S S NH 2 methionine methional methanethiol DMTS methionine + [methyl-d 3 ]- methionine methional methanethiol + + [methyl-d 3 ]- [methyl-d 3 ]- methional methanethiol H 3 C S S S CH3 (MW 126) H 3 C S S S CD3 (MW 129) D 3 C S S S CD 3 (MW 132)
30 DMTS-producing potential (ng/ml) DMTS-P1 DMTS-P Me (%) Glucose (%), rganic acids (mm) Fraction (10 ml/tube) DMTS produced(ng/ml) DMTS produced(ng/ml) frc N DMTS-P1 DMTS-P1 frc N 0 frc N DMTS-P2 DMTS-P2 + frc N
31 A RT DMTS producing potential (ng/ml)
32 S H + H - 2 H 2 S S S H + + H H - 1,2-dihydroxy-5-(methylsulfinyl) methanesulfenicacid pentan-3-one (DMTS-P1) S S S 2 H + methanethiol 2 S S DMDS S S S DMTS
33 S
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35 H 2 B A C 6' 3 (+)-Catechin (Cat) H Planar Catechin (PC1) H + Planar Catechin (PC1) G k H H + GH kht, M -1 s [Sc 3+ ], M
36 H Electron Transfer PhCMe 2 + Sc 3+ PC1 2Me 2Me H PC H 1.10G 6.60G H H H 1.10G PC1 H + PhCMe 2 Sc 3+ (a) g = (b) g // = g // = g = Proton Transfer PhCMe 2 + Sc 3+ H 5 G 50 G H 298 K 77 K
37 H (+)-Catechin Fe 3+ / H 2 2 Quercetin Planar Catechin Fe 3+ / H 2 2 Fe 3+ / H (+)-Catechin H R R Lipophilic Planar Catechin (PCn) Form II Form III Form I R R R = n H n =1 9
38 SCEs/cell H H H Control RESVERATRL H 4' 4' Dose ( g / ml) H H H 3 5 H Dose ( g / ml) Resveratrol 10 g/ml '
39 + DNA Cu(II) A Bn R 1 Bn AlCl 3 (CH 3 ) 2 NC 6 H 5 Et CH 2 P Et R 1 H H + Bn R 2 R 3 R 2 CH 1 : R 1 = H 3 : R 2 = R 3 = H 2 : R 1 = CH 3 4 : R 2 = H, R 3 = CH 3 5 : R 2 = R 3 = CH 3 NaH THF R 1 Bn Bn R 2 R 3 Bn 6 : R 1 = R 2 = H, R 3 = CH 3 7 : R 1 = H, R 2 = R 3 = CH 3 8 : R 1 = CH 3, R 2 = R 3 = H 9 : R 1 = R 2 = CH 3, R 3 = H 10 : R 1 = R 2 = R 3 = CH 3 R 3 + Resveratrol B C 11 : R 1 = R 2 = H, R 3 = CH 3 12 : R 1 = H, R 2 = R 3 = CH 3 13 : R 1 = CH 3, R 2 = R 3 = H 14 : R 1 = R 2 = CH 3, R 3 = H 15 : R 1 = R 2 = R 3 = CH 3 + d D + e E + f F Gauss R 3 R 1 R 4 R 2 Resveratrol: R 1 = R 3 = R 4 =, R 2 = H d: R 1 = H, R 2 = R 3 = R 4 = e: R 1 =, R 2 = R 3 = R 4 = H f: R 2 =, R 1, R 3, R 4 = H
40 (a)exp. g = H H H 3 CH 3 C H H CH CH 3 CH 3 3 G Galvinoxyl Radical (G )) GH GH (b) Sim. 3 G H H H 3 C H 3 C H H 0.601mT 0.141mT 0.601mT H 0.141mT CH 3 H CH 3 CH mT CH mT
41 (a) (b) Cell with chromosome aberrations (%) resveratrol resveratrol Concentration (µg/ml) 4-methylresveratrol (13) 14 15
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43 CD X Axis [mm] Y Axis [mm] - -
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45 Magnification: 150k
46 (0, -30mm) 26 nm 24 nm 150 nm 26 nm 26 nm (30mm, 0) Center (0, -30mm) 48 nm (0, 30mm) 48 nm 48 nm 48 nm 48 nm
47 E-beam resist Resist image Silicon mold Dose condition 50 nm Measurement area 50 nm including holes ZEP520A 350 C/cm 2 D : 19.9 nm 3 : 1.6 nm 50 nm 50 nm New-CAR 100 C/cm 2 D : 22.8 nm 3 : 2.5 nm D: diameter 116 nm 36 nm
48 JEM-ARM200F The Power of STEM Cs corrected Microscope 78 pm real imaging by HAADF method (Pico meter order microscopy) RAW data Specimen: Si (112)single crystal Acc vol:200kv
49 HR-Elemental identification by EELS (Atomic column by column EELS map) HAADF signal (acquired simultaneously) RGB map Sr-M map Ti-L map -K map
50 JXA-8530F BEI FE LaB 6
51 JMS-T100GCV JSPM-5410
52 MGMT.SYS. MGMT.SYS. RvA C024 R va C425 IS 9001 & REGISTERED FIRM DNV Certification B.V., THE NETHERLANDS No. 9301H875C 9401H969C (Kp)
日本電子News Vol.41, 2009
CD X Axis [mm] Y Axis [mm] - - Magnification: 150k (0, -30mm) 26 nm 24 nm 1 26 nm 26 nm (30mm, 0) Center (0, -30mm) 48 nm (0, 30mm) 48 nm 48 nm 48 nm 48 nm E-beam resist Resist image Silicon mold Dose
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