スライド 1
|
|
- ひでたつ よしくに
- 6 years ago
- Views:
Transcription
1 STRJ WS: March 9, 2006,
2 0.35µm 0.8µm 0.3µm STRJ WS: March 9, 2006, 2
3 0.35µm Lot-to-Lot, Wafer-to-Wafer, Die-to-Die(D2D) D2D 0.8µm (WID: Within Die) D2D vs. WID 0.3µm D2Dvs. WID STRJ WS: March 9, 2006, 3
4 0.35µm:Good Old Days Ids (ma) 5 All Lots 0 Single Lot 5 58 Lots, Vds(V) STRJ WS: March 9, 2006, Wafers
5 0.35µm, D2D Ids (ma) 5 All Lots 0 Single Wafer 5 58 Lots, Vds(V) STRJ WS: March 9, 2006, Wafers
6 0.35µm Id_sat (pmos vs nmos) (?) STRJ WS: March 9, 2006, 6
7 0.8µm TEG 0.8µm, 2.9 mm, 20 TEG Ids 6 Transistors/chip Ring OSC TEGs Transistor TEG 20 RO 2,800 RO TEG 2 RO TEG STRJ WS: March 9, 2006, 7
8 WID 0.8µm, ~5% ~5% 5% 5% ( ) STRJ WS: March 9, 2006, 8
9 0.8µm: Ring OSC TEG 7 0 Sections Inv RO :7,3,9,29 : 5,0,20,40,60, NAND2 NAND4 RO 0 types of ROs STRJ WS: March 9, 2006, 9
10 : (WID) 3% : 9 :00 70 STRJ WS: March 9, 2006, 0
11 (WID) :00, 9 3% (D2D) (WID) (D2D) STRJ WS: March 9, 2006,
12 : Ids: : % TEG < TEG 2 % TEG < TEG 2 2% TEG Layout TEG2 STRJ WS: March 9, 2006, 2
13 0.3µm µ 3σ in a chip Drain Current 6 transistors/chip 56 chips/wafer (D2D) (WID) # (WID) (D2D) STRJ WS: March 9, 2006, 3
14 0.3µm: Ids (WID) (D2D) W 0µm µm 2 Transistor sizes µm 0µm L STRJ WS: March 9, 2006, 4
15 Ids (WID) VDS=0.(V), VGS=.0(V) WL [Pelgrom, et al., J-SSC 989] Okada et.al., JJAP, p.3, 2005 STRJ WS: March 9, 2006, 5
16 STRJ WS: March 9, 2006, 6
17 C, R S W H T C R ( ) STRJ WS: March 9, 2006, 7
18 ITRS2005 Intermediate W,T,H : 3σ=30% resistance variation[%] resistance variation[%] capacitance variation[%] capacitance variation[%] S=W S=7W ( 00%) ( 25%) STRJ WS: March 9, 2006, 8
19 0.5 Xp SF=(-0.8,0.4) TT FF FS=(0.6,-0.5) FF, SS, TT, SF, FS Idsat nmos pmos SS Xn STRJ WS: March 9, 2006, 9
20 + STRJ WS: March 9, 2006, 20
21 Monte Carlo (CDF) ( ) probability probability Id(sat) 0 delay time nmos Idsat CDF Inv (FO4) CDF STRJ WS: March 9, 2006, 2
22 ( + ) Rtr R C CL W,T,H (Rtr) D = 0.4RC + 0.7( RtrC + RtrCL + RCL ) STRJ WS: March 9, 2006, 22
23 Intermediate S=W (lopt = 94µm, Xopt=32) regression coefficient output resistance width thickness height regression coefficient output resistance width thickness height wire length [um] wire length [um] X X6 STRJ WS: March 9, 2006, 23
24 Global S=W (lopt = 60 µm, Xopt = 67) regression coefficient output resistance width thickness height regression coefficient output resistance width thickness height wire length [um] wire length [um] X4 X32 STRJ WS: March 9, 2006, 24
25 Probability Density D n= = max D i,2 n i circuit =,..., i n=0 n=00 n=000 D i : N(5, ) n D circuit STRJ WS: March 9, 2006, 25
26 Probability Density D circuit σ = 0.5 = max D,2,..., 00 i σ =.0 σ = 2.0 i= D circuit i D i : N(5, σ) STRJ WS: March 9, 2006, 26
27 Probability Density D circuit = max D,2,..., 00 i i= D circuit i ρ = 0.0 ρ = 0.2 ρ = 0.4 ρ = 0.6 ρ = 0.8 ρ =.0 D i : N(5, σ) : ρ P,V,T STRJ WS: March 9, 2006, 27
28 Good News Bad News ( ) ( ) STRJ WS: March 9, 2006, 28
29 0.35µm 0.8µm 0.3µm STRJ WS: March 9, 2006, 29
30 (D2D,WID) ( ) (WID) / (Yamaoka et.al., ISSCC04/05) STRJ WS: March 9, 2006, 30
31 D2D, WID ACV ( ) LUT/ /PE STRJ WS: March 9, 2006, 3
32 P BC TYP WC L eff Cell Cell delay/si delay/si models models STRJ WS: March 9, 2006, 32
33 STA P WC P WC P WC L eff L eff L eff P P P L eff L eff L eff STRJ WS: March 9, 2006, 33
34 ( STA) P PDF(CDF) STRJ WS: March 9, 2006, 34
35 vs. DFF STRJ WS: March 9, 2006, 35
36 vs. vs. STRJ WS: March 9, 2006, 36
37 ( ) LUT Katsuki, et.al. CICC05 Processing Unit (): LUT,, PE, etc. STRJ WS: March 9, 2006, 37
38 (0.35, 0.8, 0.3 µm) ( ) + LUT/ /PE STRJ WS: March 9, 2006, 38
39 STRJ WS: March 9, 2006, 39
MOSFET 6-2 CMOS 6-2 TTL Transistor Transistor Logic ECL Emitter Coupled Logic I2L Integrated
1 -- 7 6 2011 11 1 6-1 MOSFET 6-2 CMOS 6-2 TTL Transistor Transistor Logic ECL Emitter Coupled Logic I2L Integrated Injection Logic 6-3 CMOS CMOS NAND NOR CMOS 6-4 6-5 6-1 6-2 CMOS 6-3 6-4 6-5 c 2011 1/(33)
More informationuntitled
NJU7704/05 C-MOS ( ) ±1.00.9µA DSP SOT-23-5 SC88A 2 DSP NJU7704/05F NJU7704/05F3 ±1.0 0.9µA typ ( ) 1.5 6.0(0.1 step) ( C ) ( ) Active "L" : NJU770****A Active "H" : NJU770****B Nch : NJU7704 C-MOS : C-MOS
More informationMicrosoft PowerPoint - SDF2007_nakanishi_2.ppt[読み取り専用]
ばらつきの計測と解析技術 7 年 月 日設計基盤開発部先端回路技術グループ中西甚吾 内容. はじめに. DMA(Device Matrix Array)-TEG. チップ間 チップ内ばらつきの比較. ばらつきの成分分離. 各ばらつき成分の解析. まとめ . はじめに 背景 スケーリングにともない さまざまなばらつきの現象が顕著化しており この先ますます設計困難化が予想される EDA ツール 回路方式
More informationPowerPoint プレゼンテーション
1 45nm 2 2004 2007 2010 90* 65 45 4 10 25 * 100 10001 H16 45 2001-2003 2004-2007 65 45 MIRAI 3 Cu n+ n+ p+ p+ p n nmos pmos ITRS 2004 2007 2010 2013 2016 3.5 k 3.0 2.5 2.0 ITRS2001 ITRS2003 Low-k 1.5 1.0
More informationGN151-200.doc
Good News No.151 Good News No.152 Good News No.153 Good News No.154 Good News No.155 Good News No.156 Good News No.157 Good News No.158 Good News No.159 CO2 Good News No.160 Good News No.161 Good
More informationVLSI工学
2008//5/ () 2008//5/ () 2 () http://ssc.pe.titech.ac.jp 2008//5/ () 3!! A (WCDMA/GSM) DD DoCoMo 905iP905i 2008//5/ () 4 minisd P900i SemiConsult SDRAM, MPEG4 UIMIrDA LCD/ AF ADC/DAC IC CCD C-CPUA-CPU DSPSRAM
More informationLT 低コスト、シャットダウン機能付き デュアルおよびトリプル300MHz 電流帰還アンプ
µ µ LT1398/LT1399 V IN A R G 00Ω CHANNEL A SELECT EN A R F 3Ω B C 97.6Ω CABLE V IN B R G 00Ω EN B R F 3Ω 97.6Ω V OUT OUTPUT (00mV/DIV) EN C V IN C 97.6Ω R G 00Ω R F 3Ω 1399 TA01 R F = R G = 30Ω f = 30MHz
More informationMicrosoft Word - sp8m4-j.doc
4V 駆動タイプ Nch+Pch MOS FET 構造シリコン N チャネル / P チャネル MOS 型電界効果トランジスタ 外形寸法図 (Unit : mm) SOP8 5..4.75 (8) (5) 特長 ) 新ライン採用により 従来品よりオン抵抗大幅低減 2) ゲート保護ダイオード内蔵 3) 小型面実装パッケージ (SOP8) で省スペース pin mark () (4).27 3.9 6..2.4Min.
More informationB1 Ver ( ), SPICE.,,,,. * : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD
B1 er. 3.05 (2019.03.27), SPICE.,,,,. * 1 1. 1. 1 1.. 2. : student : jikken. [ ] ( TarouOsaka). (, ) 1 SPICE ( SPICE. *1 OrCAD https://www.orcad.com/jp/resources/orcad-downloads.. 1 2. SPICE 1. SPICE Windows
More information平成19年度宮城県産業技術総合センター業務年報より研究結果概要
Reprina-T50 SHTT 50 t1mm 655 50Pa 8.2kN 1800sec 5μm TMA 1--3- K 1--3- H H H H H H H + H H H H 2 N P - 99.98 % H 0.02 % D-Glucose Phosphatidylethanolamine H CH 2 H (PE) H H H N P H - Schiff base Amadori
More information16-Bit, Serial Input Multiplying Digital-to-Analog Converter (Rev. B
DAC8811 www.tij.co.jp ± ± µ ± µ ± V REF CS Power-On Reset DAC8811 D/A Converter 16 DAC Register 16 R FB I OUT CLK SDI Shift Register GND DAC8811C ±1 ±1 MSOP-8 (DGK) 4to 85 D11 DAC8811ICDGKT DAC8811C ±1
More informationAD8212: 高電圧の電流シャント・モニタ
7 V typ 7 0 V MSOP : 40 V+ V SENSE DC/DC BIAS CIRCUIT CURRENT COMPENSATION I OUT COM BIAS ALPHA 094-00 V PNP 0 7 V typ PNP PNP REV. A REVISION 007 Analog Devices, Inc. All rights reserved. 0-9 -- 0 40
More informationUnidirectional Measurement Current-Shunt Monitor with Dual Comparators (Rev. B
www.tij.co.jp INA206 INA207 INA208 INA206-INA208 INA206-INA208 V S 1 14 V IN+ V S 1 10 V IN+ OUT CMP1 IN /0.6V REF 2 3 1.2V REF 13 12 V IN 1.2V REF OUT OUT CMP1 IN+ 2 3 9 8 V IN CMP1 OUT CMP1 IN+ 4 11
More informationFK4B0110
Single N-channel For oad switching circuits 0.80 4 3 Unit: mm Features Low Drain-source ON resistance:rds(on) typ. = 27 m (VGS = 2.5 V) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level compliant)
More informationLMC6022 Low Power CMOS Dual Operational Amplifier (jp)
Low Power CMOS Dual Operational Amplifier Literature Number: JAJS754 CMOS CMOS (100k 5k ) 0.5mW CMOS CMOS LMC6024 100k 5k 120dB 2.5 V/ 40fA Low Power CMOS Dual Operational Amplifier 19910530 33020 23900
More informationFK4B0111
Established : 204-03-24 Doc No. TT4-EA-4955 Revision. Single N-channel For Load switching circuits 0.60 Unit: mm 4 3 Features Low Drain-source ON resistance:rds(on) typ. = 57m (VGS = 2.5 V) CSP (Chip Size
More informationuPC2745TB,uPC2746TB DS
Bipolar Analog Integrated Circuits 3 V IC µpc275tb, µpc27tb IC3 V V NESAT ft = 2 GHz IC VCC = 2.73.3 V VCC = 3.3 V µpc275tbfu = 2.7 GHz TYP. @3 db µpc27tbfu = 1.5 GHz TYP. @3 db µpc275tbisl = 38 db TYP.
More information[pb/gev] T d / dp Data/Theory 6 5.5 0.5 0 0 00 00 00 500 600 p [GeV] T anti-k jets, R=0.6, y jet L dt=7 nb ( s=7 TeV) Systematic Uncertainties.8 NLO-pQCD (CTEQ 6.6)+ Non pert. corr. 0 00 00 00 500 600
More informationLTC ビット、200ksps シリアル・サンプリングADC
µ CBUSY ANALOG INPUT 10V TO 10V 2. 2. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 V DIG V ANA PWRD BUSY CS R/C TAG SB/BTC DATA EXT/INT DATACLK DGND SY 28 27 26 25 24 23 22 21 20 19 18 17 16 15 10µF 0.1µF SERIAL INTERFACE
More informationsm1ck.eps
DATA SHEET DS0 0 ASSP, IC,,,,, (VS =. V.%) (VCC = 0. V ) (VR =. V.%) ( ) DIP, SIP, SOP, (DIP-P-M0) (SIP-P-M0) (FPT-P-M0) (FRONT VIEW) (TOP VIEW) C T C T V S V REF V CC V CC V REF V S (DIP-P-M0) (FPT-P-M0)
More informationaaa
STRJ WS: March5, 29, 特別講演 設計技術から見た 半導体集積回路の省電力技術 東京大学大規模集積システム設計教育研究センター (VDEC) 1 生産技術研究所 2 高宮真 Outline 2 低電力設計技術の動向 (1) 低電圧 (2) 細粒度制御 (3)3 次元 ロジック回路の電源電圧の下限 (V DDmin ) 細粒度基板バイアス制御による低電力化 3 次元 SSD の NAND
More informationDS90LV011A 3V LVDS 1 回路入り高速差動出力ドライバ
3V LVDS Single High Speed Differential Driver Literature Number: JAJS962 Single High Speed Differential Driver 19961015 23685 ds200149 Input Voltage changed to 3.6V from 5V Updated DC and AC typs basic
More informationS1C60N05データシート
PF19-2 Micro MN 4-bit Single Chip Microcomputer µ µ 1 SC2 SC1 RESET RM 1,56 words x 12 bits SC System Reset Control Core CPU S1C6B RAM 8 words x 4 bits nterrupt Generator CM~ SEG~19 LCD Driver nput Port
More informationR1RW0408D シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
More information234 50cm
234 50cm () 1 10 2 3 4 1 5 6 2 2 1 7 ( ー ) っ ー っ 8 1 2 10 10 2m 4m 6m 15m 457-2472 585-1154 9 10 2 60 2 100 RC SRC 30 80 500 1 500 500 ) 10 B b A 2 A B 2m 457-2473 585-1154 11 20m a 2m 3 3 1m 75cm 120cm
More informationXP231P0201TR-j.pdf
Pchannel MOSFET 3V,.2A JTR11381 特長オン抵抗 駆動電圧環境への配慮 : RDS(on)=5Ω@VGS =4.5V : 2.5V : EU RoHS 指令対応 鉛フリー 用途 スイッチング用 内部接続図 端子配列 SOT23(TO236) Drain Gate Source 製品名 PRODUCT NAME PACKAGE ORDER UNIT * SOT23(TO236)
More informationOPA134/2134/4134('98.03)
OPA OPA OPA OPA OPA OPA OPA OPA OPA TM µ Ω ± ± ± ± + OPA OPA OPA Offset Trim Offset Trim Out A V+ Out A Out D In +In V+ Output In A +In A A B Out B In B In A +In A A D In D +In D V NC V +In B V+ V +In
More informationFC6K3339ZL
Features Build in Gate Resistor, Gate-source Resistor and Zener Diode Drain-source ON-state Resistance : RDS(on) typ. = 200 mω (VGS = 4.5 V) AEC-Q101 qualified Halogen-free / RoHS compliant (EU RoHS /
More informationあらゆる情報検出から赤外線データ通信まで 幅広い用途に使える 超小型 & 高感度 光センサー Ultra-compact, high-sensitivity optical sensors for various app ranging from information detection to i
あらゆる情報検出から赤外線データ通信まで 幅広い用途に使える 超小型 & 高感度 光センサー Ultra-compact, high-sensitivity optical sensors for various app ranging from information detection to infrared data communicati lications on CITISENSOR( 当社商標
More informationFK4B0112
Single N-channel For Load switching circuits.0 4 3 Unit: mm Features Low Drain-source ON resistance:rds(on) typ. = 7m (VGS = 2.5 V) CSP (Chip Size Package) RoHS compliant (EU RoHS / MSL:Level compliant)
More informationDistributeur : JBG-METAFIX
CL-7IR-X (.x.5x.mm) Lead-free RS-4 (.65x7.5x.75mm) Lead-free PR- (.5x.375x.6 mm) Lead-free P.7 P.4 P.35 CL-9IRS-X (x.8x.8mm) Lead-free RS-47 (3.x4.5x.mm) Lead-free CPT-3 (3.xx.mm) Lead-free P.8 P.6 P.37
More informationmbed祭りMar2016_プルアップ.key
1 2 4 5 Table 16. Static characteristics (LPC1100, LPC1100L series) continued T amb = 40 C to +85 C, unless otherwise specified. Symbol Parameter Conditions Min Typ [1] Max Unit Standard port pins, RESET
More informationJA2008
A1 1 10 vs 3 2 1 3 2 0 3 2 10 2 0 0 2 1 0 3 A2 3 11 vs 0 4 4 0 0 0 0 0 3 6 0 1 4 x 11 A3 5 4 vs 5 6 5 1 0 0 3 0 4 6 0 0 1 0 4 5 A4 7 11 vs 2 8 8 2 0 0 0 0 2 7 2 7 0 2 x 11 A5 9 5 vs 3 10 9 4 0 1 0 0 5
More informationDrift Chamber
Quench Gas Drift Chamber 23 25 1 2 5 2.1 Drift Chamber.............................................. 5 2.2.............................................. 6 2.2.1..............................................
More information_FH28_J.qxd
23.9 + + ø ø ø ø ø ø ø ø ø ++ + ++ + + + ± FH 28 D - 5 (25) S B -.5 SH (5) 2 3 4 5 6 7 8 9 2 6 7 3 8 4 9 5 ** ** ** ** ** ** ** ** ** ** ** ** ** CL586-86-4-** CL586-868-3-** CL586-823-5-** CL586-835-4-**
More information( ) : 1997
( ) 2008 2 17 : 1997 CMOS FET AD-DA All Rights Reserved (c) Yoichi OKABE 2000-present. [ HTML ] [ PDF ] [ ] [ Web ] [ ] [ HTML ] [ PDF ] 1 1 4 1.1..................................... 4 1.2..................................
More informationii 4 5 RLC 2 LC LC OTA, FDNR 6
There is nothing more practical than a good theory. James Clerk Maxwell ( 1831 1879) 1.1 1.1 2 3 MOSFET 3 MOSFET MOS CMOS CMOS CMOS ii 4 5 RLC 2 LC LC OTA, FDNR 6 iii 1 (90 30 ) 6 5 1 1 2013 3 1. 1.1...
More informationTriple 2:1 High-Speed Video Multiplexer (Rev. C
www.tij.co.jp OPA3875 µ ± +5V µ RGB Channel OPA3875 OPA3875 (Patented) RGB Out SELECT ENABLE RED OUT GREEN OUT BLUE OUT 1 R G B RGB Channel 1 R1 G1 B1 X 1 Off Off Off 5V Channel Select EN OPA875 OPA4872
More informationuntitled
20101221JST (SiC - Buried Gate Static Induction Transistor: SiC-BGSIT) SOURCE GATE N source layer p + n p + n p + n p+ n drift layer n + substrate DRAIN SiC-BGSIT (mωcm 2 ) 200 100 40 10 4 1 Si limit
More informationXP233P1501TR-j.pdf
P-channel MOSFET -3V, -1.5A JTR114-1 特長オン抵抗 駆動電圧環境への配慮 : RDS(on)=.19Ω@VGS =-1V : -4.5V : EU RoHS 指令対応 鉛フリー 用途 スイッチング用 内部接続図 端子配列 SOT-23(TO-236) Drain Gate Source 製品名 PRODUCT NAME PACKAGE ORDER UNIT * SOT-23(TO-236)
More informationhν 688 358 979 309 308.123 Hz α α α α α α No.37 に示す Ti Sa レーザーで実現 術移転も成功し 図 9 に示すよ うに 2 時間は連続測定が可能な システムを実現した Advanced S o l i d S t a t e L a s e r s 2016, JTu2A.26 1-3. 今後は光周波 数比計測装置としてさらに改良 を加えていくとともに
More informationuPC2711TB,uPC2712TB DS
5 VIC Bipolar Analog Integrated Circuits µpc2711tb, µpc2712tbbsic 20122915 µpc2711tb, µpc2712tb µpc2711t, µpc2712t NESAT TM ft = 20 GHz IC fu = 2.9 GHz TYP.µPC2711TB fu = 2.6 GHz TYP.µPC2712TB GP = 13
More informationAN8472SA
IC CD-ROM DVD IC PWM 3 120 PWM ON (0.6 Ω typ.) D-MOS START/STOP FG EC/ECR CD-ROM DVD-ROM CD-R CD-RW 32 1 16 (0.625) 11.0±0.3 0.65 0.3 +0.10 0.05 17 SEATING PLANE 6.1±0.3 0.65±0.10 0.65±0.10 0.1±0.1 1.5±0.2
More information2 1
http://www.kikkoman.co.jp/ 2 1 21,646 11,219 5,275 17,350 6,056 20,983 2,777 10,793 4,327 10,125 10,739 128,391 359,906 119,975 392,611 59,993 202,727 18,557 1,401 4,052 4,045 5,702 5,852 2,378 103,445
More information15.06月号.indd
2015. no521 6 2015.6 News 2015.6 News News 2015.6 2015.6 News News 2015.6 News 2015.6 2015.6 2015.6 2015.6 2015.6 2015.6 2015.6 2015.6 2015.6 2015.6 2015.6 2015.6 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
More information14.08月号.indd
2014. no511 8 News 2014.8 News 2014.8 News 2014.8 News 2014.8 2014.8 2014.8 News 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 2014.8 1 2 3 4 5 6 7 8
More information15.03月号.indd
2015. no518 3 2015.3 2015.3 News 2015.3 2015.3 News News 2015.3 2015.3 2015.3 2015.3 2015.3 2015.3 2015.3 2015.3 2015.3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30
More information燃焼圧センサ
49 Combustion Pressure Sensor Kouji Tsukada, Masaharu Takeuchi, Sanae Tokumitsu, Yoshiteru Ohmura, Kazuyoshi Kawaguchi π 1000N 150 225N 1 F.S Abstract A new combustion pressure sensor capable of measuring
More informationSuper perfect numbers and Mersenne perefect numbers /2/22 1 m, , 31 8 P = , P =
Super perfect numbers and Mersenne perefect numbers 3 2019/2/22 1 m, 2 2 5 3 5 4 18 5 20 6 25 7, 31 8 P = 5 35 9, 38 10 P = 5 39 1 1 m, 1: m = 28 m = 28 m = 10 height48 2 4 3 A 40 2 3 5 A 2002 2 7 11 13
More informationFK9B0439ZL
Single N-channel Mark Identifier.94 Unit: mm Features Drain-source On-state Resistance : RDS(on) typ. = 9.5 mω ( VGS = V ) CSP( Chip Size Package ) Halogen-free / RoHS compliant ( EU RoHS / UL-94 V- /
More information35
D: 0.BUN 7 8 4 B5 6 36 6....................................... 36 6.................................... 37 6.3................................... 38 6.3....................................... 38 6.4..........................................
More informationuntitled
MOSFET 17 1 MOSFET.1 MOS.1.1 MOS.1. MOS.1.3 MOS 4.1.4 8.1.5 9. MOSFET..1 1.. 13..3 18..4 18..5 0..6 1.3 MOSFET.3.1.3. Poon & Yau 3.3.3 LDD MOSFET 5 3.1 3.1.1 6 3.1. 6 3. p MOSFET 3..1 8 3.. 31 3..3 36
More informationPowerPoint Presentation
/ 2008/04/04 Ferran Salleras 1 2 40Gb/s 40Gb/s PC QD PC: QD: e.g. PCQD PC/QD 3 CP-ON SP T CP-OFF PC/QD-SMZ T ~ps, 40Gb/s ~100fJ T CP-ON CP-OFF 500µm500µm Photonic Crystal SMZ K. Tajima, JJAP, 1993. Control
More informationuPC2745TB,uPC2746TB DS
Bipolar Analog Integrated Circuits 3 VIC µpc2745tb, µpc2746tb IC3 V1.8 V NESAT TM ft = 20 GHz IC VCC = 2.73.3 V VCC = 1.83.3 V µpc2745tbfu = 2.7 GHz TYP. @3 db µpc2746tbfu = 1.5 GHz TYP. @3 db µpc2745tbisl
More information自由集会時系列part2web.key
spurious correlation spurious regression xt=xt-1+n(0,σ^2) yt=yt-1+n(0,σ^2) n=20 type1error(5%)=0.4703 no trend 0 1000 2000 3000 4000 p for r xt=xt-1+n(0,σ^2) random walk random walk variable -5 0 5 variable
More informationR1RW0416DI シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
More informationLM35 高精度・摂氏直読温度センサIC
Precision Centigrade Temperature Sensors Literature Number: JAJSB56 IC A IC D IC IC ( ) IC ( K) 1/4 55 150 3/4 60 A 0.1 55 150 C 40 110 ( 10 ) TO-46 C CA D TO-92 C IC CA IC 19831026 24120 11800 ds005516
More informationuPC2709T DS
Bipolar Analog Integrated Circuit 5 VIC BS/CS1 stific NESAT TM ft = 20 GHz IC fu = 2.3 GHz TYP.3 db POsat= 11.5 dbmf = 1 GHz, VCC = 5.0 V0.5 V GP = 23 db TYP.f = 1 GHz 50 Ω BS/CS1 stif BS/CS1 stif -E3
More informationFK4B0343ZL All in one N-channel MOS FET ADVANCE INFORMATION Features For passive cell balancing circuits Built-in cell discharge resistor, gate-source
All in one N-channel Features For passive cell balancing circuits Built-in cell discharge resistor, gate-source resistor and zener diode CSP( Chip Size Package ) Halogen-free / RoHS compliant ( EU RoHS
More informationH27 28 4 1 11,353 45 14 10 120 27 90 26 78 323 401 27 11,120 D A BC 11,120 H27 33 H26 38 H27 35 40 126,154 129,125 130,000 150,000 5,961 11,996 6,000 15,000 688,684 708,924 700,000 750,000 1300 H28
More informationuntitled
213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造 ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい
More informationR1LV0416Dシリーズ データシート
Wide Temperature Range Version 4M SRAM (256-kword 16-bit) RJJ03C0237-0100 Rev. 1.00 2007.05.24 262,144 16 4M RAM TFT 44 TSOP II 48 CSP 0.75mm 3.0V 2.7V 3.6V 55/70ns max 3µW typ V CC =3.0V 2CS 40 +85 C
More informationMicrosoft PowerPoint - 応物シンポジウム201003ナノワイヤ21.ppt
シリコンナノワイヤ pfet における正孔移動度 平本俊郎陳杰智, 更屋拓哉東京大学生産技術研究所 hiramoto@nano.iis.u-tokyo.ac.jp 1. ナノワイヤトランジスタの位置付け 2. ナノワイヤ FET の移動度測定 3. ナノワイヤ nfet と pfet の移動度 4. まとめ 本研究の一部は,NEDO のプロジェクト ナノエレクトロニクス半導体材利用 新構造なの電子デバイス技術開発
More information1
1 5% 4% 11% 8% 13% 12% 10% 6% 17% 6% 8% 4% 6% 6% 2% 17% 17% 12% 14% 16% 6% 37% 11% 17% 35% 2 (N=6,239) 0 200 400 600 800 1,000 1,200 1,400 1,600 1,800 1,585 1,126 950 494 345 296 242 263 191 150 131 116
More information() () () 200,000 160,000 120,000 80,000 40,000 3.3 144,688 43,867 3.1 162,624 52,254 170,934 171,246 172,183 3 2.8 2.6 57,805 61,108 65,035 3.5 3 2.5 2 1.5 1 0.5 0 0 2 7 12 17 22 10.1 12.7 17 22.3 73.4
More informationR1RP0416D シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
More information