) ( ) ( 34,3 (1995))
|
|
- まな みつだ
- 5 years ago
- Views:
Transcription
1 4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( )
2 ) ( ) ( 34,3 (1995))
3
4 (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )
5
6 DMD (Digital Micromirror Device) DMD (Digital Micromirror Device)
7 DMD (Digital Micromirror Device) DMD V.Kessel et.al., Proc.IEEE, 86 (1996)
8
9
10 (1975)
11 GLV (Grating Light Valve) 1920 / sec GLV(Grating Light Valve) HDTV (MEMS & (CQ )p.189 )
12 GLV 4000:1 (S.R.Kubota ( ), Optics & Photonics News, Sept.2002, p.50)
13 GLV CTP (Computer-To- Plate) ( ) (MEMS & (CQ )p.189 ) 10 m
14
15 CRT FED (Field Emission Display) Optronics, Vol.10, No.202 (1998) p.145 (Trigger, )
16 ( ( ), ) (N.Asada et.al., IEEE Trans. on Magnetics 30 (1994))
17 ( ) Nomad Expert Technical System (J.R.Lewies : IEEE Specrrum, May 2004 p.16)
18 ( )
19 (GMR ) ( No.671 (1996) p.85, p.94, No.691 (1997) p.94) 2mm ( (1998))
20 MO ( pp )
21 MD ( pp )
22 (D.W.Lee et.al., MEMS 01)
23 30 nm Pt/Ti SiO 2 Ni
24 (GeSbTe) (2µm 2µm)
25 (D.W.Lee et.al., J. of Microelectromechanical Systems, 11, 3 (2002), ) (J.H.Bae et.al., Applied Physics Letters, 82 (2003), pp )
26 (J.H.Bae, Diamond and Relared Materials, 12 (2003), p.2128) Diamond Probe for Ultra-High-Density Data Storage Based on Scanning Nonlinear Dielectric Microscopy H.Takahashi (Pioneer Corp.), T.Ono, Y.Cho and M.Esashi(Tohoku Univ.) (MEMS 04 (2004) p.536)
27 Domain of ferromagnetics N N S Domain of ferroelectrics + Pr - Pr + N ~50nm Bloch wall Pr Single lattice domain wall Advantageous to record nano-size domain array SNDM (Scanning Nonlinear Dielectric Microscopy) (Y.Cho, Rev. Sci. Instrum. 67, (1996) p.2297) 800nm The end of the diamond probe. Recording medium LiTaO 3 Thickness: 60nm Writing condition DC Pulse: 15 V Width: 1 ms Reading condition AC voltage: 2.5V Frequency: 10kHz FM signal frequency: around 1.3GHz The diamond probe array.
28 T.Ono et.al., Nanotechnology, 14 (2003) pp ) H 2 N H SH 2 N (NH4)2S2O8 NH 2 NH 2 NH 2 N N N S S S Au NH NH NH S S S Au 7nm
29 5µm 5µm 5µm ( 0.03V) (, (2004)) H H N N N N n N N N N n H + H H +2e - 30
30 4µm 4µm 3V -3V ( 0.03V) nm
31 ( ) (N.Sato et.al. (NTT), Proc. the 20th Sensor Symposium, (2003) p.323)
32 MEMS ( ) ( (NHK )
33 ( FHD (Frame Hydrolysis Deposition)) (T.Tajima et.al., Micro and Nanoengineering 2002 Internal. Conf., Lugano Switzerland (2002))
34
35
36 ( ) (,, Vol.87 (1999) p.713)
37 ( ISDN (1989) ) (,, Vol.87 (1999) p.713)
38 +/- 5 motion on each axis. ~ 150V drive voltage < 5msec switching time. 2
39
40 ( )
41 ( FHD (Frame Hydrolysis Deposition))
42 (M.Hoffmann )
43 Satellite antenna HDTV Camera Information consent Optical switch Quartz fiber Camera HDTV Information divide transmission POF 5 POF SMA SMA SMA POF SI mm L W H Ni Ni 0.5 SMA Ni Ti 0.2mm mm (M.Bhuiyan et.al., 20 th Sensor Symposium, (2003) 47-50)
44
45 (L.P.Boivin, Applied Optics, Vol.13 (1973) p.391) λ1 VOA MUX Optical fiber DMUX PD λ2 VOA PD λ3 VOA PD Optical Amp λn VOA PD dβ dβ dβ µm µm µm VOA VOA;Variable Optical Attenuator (DWDM)
46 500 µm 70 µm 525 µm off on Array-VOA SEM Array-VOA ( )
47 30 m RF ( ) RF ( ) ( )
48 RFMEMS
49
50 (Y.Liu et.al., MEMS 01)
51 ( ) <160mW (6V ) on <0.3 <3ms V-15mA 20GHz 5mm MEMS ( ) ( ) SEMICON JAPAN 4mm MEMS
52 MEMS (J.Chao, Int l Conf. Millimeter Submillimeter Waves and Applications (1994)) RF ( : )
53 (, 2004,11,22, p.61) ( )
54
55 (Wan-Thai Hsu (Discera). From micromechanical resonators to fully integrated transceivers 8 SEMI MEMS 12 2 )
56 (J.Wang et.al., Transducers 03 (2003) p.947) 3 20 m (J.Wang et.al., Trans-ducers 03 (2003) p.947)
57 73MHz (M.A.Abdelmoneum et.al., MEMS 03, Kyoto (2003) p.698) FBAR ( ) ( ) MEMS Motional resistance Motional resistance Q Post CMOS compatible
58 AlN ( ) (G.Piazza et.al.(u.c.berkeley), MEMS 2005, p.20) ( )
59 LC [Q ] [ ] [ MEMS GHz ] (SAW : Surface Acoustic Wave) GHz ( ) (FBAR : Bulk Acoustic Wave) GHz An FBAR technology is good for a GHz frequencies. -Low IL (RX:2.2dB TX:1.8dB*) -High Power Handling (30dBm*) -Higher frequency Operation A SAW technology suffers from degradations of electric characteristics in a GHz band. ( ) *
60 GHz ( ) High Q H 2 O 2 Ge CMOS AlN (300 ) CMOS CMOS AlN (AlN 300 ) AlN (M.Hara, IEEE MTT-S Internl. Microwave Symposium (2003) p.1797)
61 FBAR FBAR
62 Agilent FBAR FBAR (L.Elbrecht et.al.(infinion Tech.),2004 IEEE MTT-S,(2004) p.395)
63 400MHz 1 (H.Satoh (Toshoba), 1987 Ultrasonic Symposium, pp ) (, 7th Symp. on Microjoining and Assembly Technology in Electronics, (2001), )
64 ( ) (E.-C.Park, J.-B.Yoon et.al.,mems 2003, pp ) RF (R.Dekker et.al., An Ultra Low-Power RF Bipolar Technology on Glass, IEDM )
65 TOP Silicon Silicon dioxide Bottom Trench-refilled TEOS oxide Trench-refill
66 P.W.Barth, Micromachining and Micropackaging of Transducers, (ed. C.D.Fung) Elsevier Sci Pub., (1985) p.189 Micro Zero-Insertion-Force (ZIF) Connector (Y.Zhan ( ), WIMS ERC Annual Report 2002, p.124)
67
68 ( )
69 (A.K.Mallik, J.of Microelectromechanical Systems, 4,3 (1995) p.119) Capillary pumped loop (K.Pettigrew et.al., MEMS 2001, p.427)
) ( ) ( 34,3 (1995))
4. MEMS 2 : MEMS ( ) DMD (Digital Micro mirror Device) FED (Field Emission Display) ( ) ( ) RF ( ) ( ) IC RF ( ) ) ( ) ( 34,3 (1995)) (M.Murata et.al.: IEICE Trans. Electron., E84-c (2001) p.1792) ( )
More information( )
MEMS 4 : ( ) ( ) Pt ITO Si (2 m) Si (0.2 m) (T.Ono et.al., J.Micromech.Microeng.,10 (2000) 445-451) DEMA (Distributed Electrostatic MicroActuator) (XY ) DEMA (Distributed Electrostatic MicroActuator)
More informationuntitled
1. 2. ( ) 3. ( ) 4. ( ) 5. ( ) 6. MEMS 20mm 400 (40 )100 A-A A 2. ( ) MEMS A (L.M.Roylance et.al., IEEE Trans. on Electron Devices, ED-26 (1979) p.1911) ( (In-Vivo Oximetry)) (J.M.Schmitt,F.G.Mihm and
More informationuntitled
( ) ( ) 1 MEMS : MEMS ( +13% / ) 2 3 ISFET ph,co 2 (K.Shimada, M.Esashi, Med.& Biol.Eng.& Comp.,18 (1980) p.741) (M.Esashi T.Matsuo, Supplement to the J.J.AP.,44 (1975),339-343) 4 5 (Y.Matsumoto, S.Shoji,
More information1
5-3 Photonic Antennas and its Application to Radio-over-Fiber Wireless Communication Systems LI Keren, MATSUI Toshiaki, and IZUTSU Masayuki In this paper, we presented our recent works on development of
More informationuntitled
( ) (mm) (GHz)=300( ) 30 300GHz=1 10mm ( 2GHz2Mbps) Gbps= Mbps ( m),? S G=P/Pi30dB=1000 Gm=4πS/λ 2, S= 80λ 2 Gm=30dB η=g/gm, S= 80λ 2,G=27dB η=50% (GHz) 80 70 60 50 40 30 20 10 16 19 22 25 28 31 34 37
More information2 ( ) PVD (Physical Vapor Deposition)
2 ( ) PVD (Physical Vapor Deposition) G.Lim et.al., Robotica, 14 (1996) pp.499-506 ( ) ( Ionics, 20, 9 (1994) p.147) MEMS CVD (Chemical Vapor Deposition) CVD MacDonald et.al. MEMS 90 CVD 160-220ºC 1,1,1,5,5,5,5-
More information10 IDM NEC
No.29 1 29 SEAJ SEAJ 2 3 63 1 1 2 2002 2003 6 News 9 IEDM 11 13 15 16 17 10 IDM NEC 3 12 3 10 10 2 3 3 20 110 1985 1995 1988 912001 1 1993 95 9798 199010 90 200 2 1950 2 1950 3 1311 10 3 4 4 5 51929 3
More informationMicrosoft PowerPoint - 山形大高野send ppt [互換モード]
, 2012 10 SCOPE, 2012 10 2 CDMA OFDMA OFDM SCOPE, 2012 10 OFDM 0-20 Relative Optical Power [db] -40-60 10 Gbps NRZ BPSK-SSB 36dB -80-20 -10 0 10 20 Relative Frequency [GHz] SSB SSB OFDM SSB SSB OFDM OFDM
More informationIC NMOS ( )
5. MEMS 3 : IC NMOS ( ) (T.Hoshino (Tokyo Electron Ltd.) et.al., 18 th Sensor Symposium late news, 2001) 10000 memory : Probe (pad) Count 4000 Cobra probe cards 2000 ASIC 200 LCD driver IC Epoxy-needle
More information日立評論2008年1月号 : 基盤技術製品
Infrastructure Technology / Products HIGHLIGHTS 2008 HDD 2.5 HDD3.5 HDD 1 Deskstar 7K1000 HDD Hard Disk Drive 2006 5 PC 2.5 HDD HDD 3.5 HDD1 1 2007 3Deskstar 7K1000 3.5 HDD 1149 Deskstar 7K500 2 GMR Giant
More informationuntitled
Ver.1 29/5/2009 1 UNISEC (UNIversity Space Engineering Consortium) UNITEC-1 (UNIsec Technological Experiment Carrier-1) 2010 5 UNITEC-1 GHz C CW UNISEC AMSAT UNITEC-1 TBD CW UNITEC-1, 2 1. UNITEC-1 UNISEC
More information資料1-3
WPT (2017) ( ) *JST Center of Innovation ( 13- ) Last 5X * 16 8, 15 7, 14 6 METLAB 16 20, 15 18 WPT * IEEE MTTS Wireless Power Transfer Conference ( 11-, ) MTTS TC-26 (Wireless Energy Transfer and Conversion
More informationc c SSIS10 10 10 1998 2001 SSIS 2001 LSI 2001 MIRAI NECASKA SELETE 21 5ISSCC LSI 2004 2004SSIS PR 60 70
Encore SSIS 10 c c SSIS10 10 10 1998 2001 SSIS 2001 LSI 2001 MIRAI NECASKA SELETE 21 5ISSCC LSI 2004 2004SSIS PR 60 70 SSIS NOSIDE PR SSIS SSIS PR 2000 5SSIS SSIS 1 2001 5 8 3 2004 SSIS 1 2 SSIS 24 SSISPR
More informationDC-DC Control Circuit for Single Inductor Dual Output DC-DC Converter with Charge Pump (AKM AKM Kenji TAKAHASHI Hajime YOKOO Shunsuke MIWA Hiroyuki IW
DC-DC Control Circuit for Single Inductor Dual Output DC-DC Converter with Charge Pump (AKM AKM Kenji TAKAHASHI Hajime YOKOO Shunsuke MIWA Hiroyuki IWASE Nobukazu TAKAI Haruo KOBAYASHI Takahiro ODAGUCHI
More informationResearch & Development
Research & Development Each company of the Sumitomo Electric Group combines its unsurpassed creativity with knowledge and experience to generate dynamics that allows the group to contribute to society.
More informationMicrosoft Word - 学士論文(表紙).doc
GHz 18 2 1 1 3 1.1....................................... 3 1.2....................................... 3 1.3................................... 3 2 (LDV) 5 2.1................................ 5 2.2.......................
More information15H02248 研究成果報告書
70Gbps ICT 100Tbps LAN 100Gbps 10Gbps 40Gbps TU Berlin 25Gbps 60Gbps (IBM) (APL 2013, APEX 2014) 10 m (Optics Express 2014) 100Gbps 3 VCSEL 4 7 図 10 変調器集積面発光レーザ 8 NRZ 48Gbps 11 図 12 製作した変調器集積 VCSEL の近視野像
More informationmain.dvi
FDTD S A Study on FDTD Analysis based on S-Parameter 18 2 7 04GD168 FDTD FDTD S S FDTD S S S S FDTD FDTD i 1 1 1.1 FDTD.................................... 1 1.2 FDTD..................... 3 2 S 5 2.1 FDTD
More informationLD
989935 1 1 3 3 4 4 LD 6 7 10 1 3 13 13 16 0 4 5 30 31 33 33 35 35 37 38 5 40 FFT 40 40 4 4 4 44 47 48 49 51 51 5 53 54 55 56 Abstract [1] HDD (LaserDopplerVibrometer; LDV) [] HDD IC 1 4 LDV LDV He-Ne Acousto-optic
More information1 158 14 2 8 00225 2 1.... 3 1.1... 4 1.2... 5 2.... 6 2.1...7 2.2... 8 3.... 9 3.1... 10 3.2... 16 4.... 17 4.1... 18 4.2... 20 4.3... 22 5.... 23 5.1... 24 5.2... 28 5.3... 34 5.4... 37 5.5... 39 6....
More informationUWB a) Accuracy of Relative Distance Measurement with Ultra Wideband System Yuichiro SHIMIZU a) and Yukitoshi SANADA (Ultra Wideband; UWB) UWB GHz DLL
UWB a) Accuracy of Relative Distance Measurement with Ultra Wideband System Yuichiro SHIMIZU a) and Yukitoshi SANADA (Ultra Wideband; UWB) UWB GHz DLL UWB (DLL) UWB DLL 1. UWB FCC (Federal Communications
More information2
Rb Rb Rb :10256010 2 3 1 5 1.1....................................... 5 1.2............................................. 5 1.3........................................ 6 2 7 2.1.........................................
More informationMainOfManuscript.dvi
18 2 28 0244086 IC IC IC (MDA) 20% 60% i 1 1 2 4 2.1................. 4 2.2 UHF............. 9 2.2.1 315MH.......................... 10 2.2.2 433MH.......................... 13 2.2.3.......................
More information03_委託テーマ発表資料(その2)(p.89-p.134).pdf
89 MEMS 2 / 5-0 0-20 90 3 Beyond-CMOS CNT CNT CNT NEC 4 NEDO (80 NEDO 2008.05 Nature Nanotechnology NEDO (8 22 CNT CNT NEDOPJ CNT NEDO M 3 5 Nature Nanotechnology 3, 289-294 (2008) 6 9 7 8 92 9 (!!! '!!!
More information14 2 5
14 2 5 1 1 1-1... 1 1-2... 3 1-3... 3 1-4... 4 2 5 2-1... 5 2-1-1... 5 2-1-2... 6 2-1-3... 8 2-1-4... 8 2-1-5...11 2-1-6... 12 2-1-7... 13 2-1-8... 14 2-2... 16 2-2-1... 16 2-2-2... 17 2-2-3... 18 2-2-4...
More informationuPC2711TB,uPC2712TB DS
5 VIC Bipolar Analog Integrated Circuits µpc2711tb, µpc2712tbbsic 20122915 µpc2711tb, µpc2712tb µpc2711t, µpc2712t NESAT TM ft = 20 GHz IC fu = 2.9 GHz TYP.µPC2711TB fu = 2.6 GHz TYP.µPC2712TB GP = 13
More informationuntitled
Tokyo Institute of Technology high-k/ In.53 Ga.47 As MOS - Defect Analysis of high-k/in.53 G a.47 As MOS Capacitor using capacitance voltage method,,, Darius Zade,,, Parhat Ahmet,,,,,, ~InGaAs high-k ~
More informationuntitled
- i - - i - Application of All-Optical Switching by Optical Fiber Grating Coupler Yasuhiko Maeda Abstract All-optical switching devices are strongly required for fast signal processing in future optical
More information160GHz
2006 11 24 2006 2006/11/24 Seminar-Progresses-A1.ppt 1 Ultrafast Optical Logic Lab., UEC 160GHz 0212014 1 DISC-Loop DISC-Loop 2 DFB-LD DFB-LD 2 WDM 100 Ch OTDM t 3 DISC-Loop 10 160GH 6~100ps 10~160GHz
More informationi 1 40 ii Grid Dip Meter 3 10kc 1000Mc Grid Dip Meter (RF) Q Grid Dip Meter Grid Dip Meter GDM Grid Dip Meter i ii 1. Grid Dip Meter 1 1.1................... 1 1.2............... 2 1.3............... 5
More informationAnechoWeb_JA_01
EMCRF EMC Contents Update : AUGUST 24 / 5 2 / 5 emcrf_ ja /254 Deviation (db) Deviation (db) Center Front 2m Back 2m Right 2m Left 2m Center Front 2m Back 2m Right 2m Left 2m Tx =m Tx =m 2 2 - - 2-2 Tx
More information三菱光デバイス
0.9 0.8 0.7 0.6 500 0.5 y 0.4 0.3 490 0.2 0.1 0.0 0.0 520 480 540 srgb CMY D65 Laser Display 560 580 600 620 700 470 460 380 0.1 0.2 0.3 0.4 x 0.5 0.6 0.7 0.8 RED [638nm] (Display System etc.) ML562G84
More informationスライド 1
High-k & Selete 1 2 * * NEC * # * # # 3 4 10 Si/Diamond, Si/SiC, Si/AlOx, Si Si,,, CN SoC, 2007 2010 2013 2016 2019 Materials Selection CZ Defectengineered SOI: Bonded, SIMOX, SOI Emerging Materials Various
More informationuntitled
213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造 ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい
More informationTHE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS TECHNICAL REPORT OF IEICE.
THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS TECHNICAL REPORT OF IEICE. E-mail: {ytamura,takai,tkato,tm}@vision.kuee.kyoto-u.ac.jp Abstract Current Wave Pattern Analysis for Anomaly
More informationP361
ΣAD -RFDAC - High-Speed Continuous-Time Bandpass ΣAD Modulator Architecture Employing Sub-Sampling Technnique with 376-8515 1-5-1 Masafumi Uemori Tomonari Ichikawa Haruo Kobayashi Department of Electronic
More information2005 1
2005 1 1 1 2 2 2.1....................................... 2 2.2................................... 5 2.3 VSWR................................. 6 2.4 VSWR 2............................ 7 2.5.......................................
More informationuntitled
COPAL ELECTRONICS 32 (DP) DP INC 2 3 3 RH RL RWB 32 C S U/D INC U/D CS 2 2 DP7114 32 SOIC CMOS 2.5 V - 6.0 V / 10 kω 50 kω 100 kω TSSOP MSOP /BFR INC / U/D RH RoHS GND RWB RL CS VCC 2017 6 15 1 : R = 2
More information1 2 2 (Dielecrics) Maxwell ( ) D H
2003.02.13 1 2 2 (Dielecrics) 4 2.1... 4 2.2... 5 2.3... 6 2.4... 6 3 Maxwell ( ) 9 3.1... 9 3.2 D H... 11 3.3... 13 4 14 4.1... 14 4.2... 14 4.3... 17 4.4... 19 5 22 6 THz 24 6.1... 24 6.2... 25 7 26
More informationプロダクトガイド・表1
ystem S o l u t i o n s Storage Solutions HP Solutions e-business Solutions Mechanical Computer-Aided Design Authoring Software to Create Better Product Documentation Contents Secure File Transfer Solution
More informationj9c11_avr.fm
AVR Type: AVR-M AVRL Issue date: September 211 RoHS EU Directive 22/95/EC PBB PBDE (1/1) SMD RoHS AVR AVR-M AVRL Varistor 2Zener diode Current(A) Positive direction 1 1 1 2 1 3 1 4 1 5 Zener diode /Vz:6.8V
More informationmain.dvi
ß ß È ÆÓÒØ ÖÑ Ð «Ø Ó Å ÖÓÛ Ú ÁÖÖ Ø ÓÒ ÓÒ ÐÓÖ Ò Ø ÓÒ ÈÖÓ Ó È ¾¼½¼ ¾ ¼ ¾ È ÈÓÐÝ ÐÓÖ Ò Ø Ô ÒÝÐ ¾º ÀÞµ È È È» È ¹ÁÈ ÁÈ ¾¼± È ¼ÀÞ È È ÅÎ»Ñ È ½ ½ ½º½ ½º¾ ¾ ¾º½ ¾º¾ ¾º ¾º ¾º½º½ ¾º½º¾ ¾º¾º½ ¾º¾º¾ ¾º¾º ¾º¾º ¾º
More informationFig. 3 Flow diagram of image processing. Black rectangle in the photo indicates the processing area (128 x 32 pixels).
Fig. 1 The scheme of glottal area as a function of time Fig. 3 Flow diagram of image processing. Black rectangle in the photo indicates the processing area (128 x 32 pixels). Fig, 4 Parametric representation
More informationuPC2745TB,uPC2746TB DS
Bipolar Analog Integrated Circuits 3 VIC µpc2745tb, µpc2746tb IC3 V1.8 V NESAT TM ft = 20 GHz IC VCC = 2.73.3 V VCC = 1.83.3 V µpc2745tbfu = 2.7 GHz TYP. @3 db µpc2746tbfu = 1.5 GHz TYP. @3 db µpc2745tbisl
More informationDEIM Forum 2017 H ,
DEIM Forum 217 H5-4 113 8656 7 3 1 153 855 4 6 1 3 2 1 2 E-mail: {satoyuki,haya,kgoda,kitsure}@tkl.iis.u-tokyo.ac.jp,.,,.,,.,, 1.. 1956., IBM IBM RAMAC 35 IBM 35 24 5, 5MB. 1961 IBM 131,,, IBM 35 13.,
More information1
3 Photonics Technologies 3-1 Optical Modulators for Photonic Sideband Management KAWANISHI Tetsuya and IZUTSU Masayuki In this paper, we presented our recent works on development of optical modulators
More information( ) : 1997
( ) 2008 2 17 : 1997 CMOS FET AD-DA All Rights Reserved (c) Yoichi OKABE 2000-present. [ HTML ] [ PDF ] [ ] [ Web ] [ ] [ HTML ] [ PDF ] 1 1 4 1.1..................................... 4 1.2..................................
More informationR1RW0408D シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
More information修士論文
SAW 14 2 M3622 i 1 1 1-1 1 1-2 2 1-3 2 2 3 2-1 3 2-2 5 2-3 7 2-3-1 7 2-3-2 2-3-3 SAW 12 3 13 3-1 13 3-2 14 4 SAW 19 4-1 19 4-2 21 4-2-1 21 4-2-2 22 4-3 24 4-4 35 5 SAW 36 5-1 Wedge 36 5-1-1 SAW 36 5-1-2
More informationIEEE HDD RAID MPI MPU/CPU GPGPU GPU cm I m cm /g I I n/ cm 2 s X n/ cm s cm g/cm
Neutron Visual Sensing Techniques Making Good Use of Computer Science J-PARC CT CT-PET TB IEEE HDD RAID MPI MPU/CPU GPGPU GPU cm I m cm /g I I n/ cm 2 s X n/ cm s cm g/cm cm cm barn cm thn/ cm s n/ cm
More information[1] [2] 2.4 GHz AN [3] IEEE AN 2.4 GHz AN 2 AN AN CSMA/CA AN AN 2. AN 3. AN AN 2.4 GHz AN AN AN AN AN IEEE 2.11g GHz 2.4 GHz
THE INSTITUTE OF EECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS TECHNICA REPORT OF IEICE. AN 66-51 611-11 E-mail: info14@imc.cce.i.kyoto-u.ac.jp ANocal Area Network AN AN AN AN AN AN Experimental
More information技術調査レポート(セット版)0318
1 MEMS MEMS(Micro Electro Mechanical Systems) MEMS MEMS 1990 MEMS MEMS 2 MEMS MEMS MEMS mm ( ) MEMS MST 1mm 1m Ball Semiconductor Inc. IC [2] IC [2] Si 3 MEMS 2.1 MEMS DNA MEMS 80 MEMS ABS 2.0mm 15mm 4
More informationuntitled
CMOS 376-851511 0277 (30) 1788 0277 (30)1707 e-mail: k_haruo@el.gunma-u.ac.jp AD AD AD [] AD AD AD [] ISSCC 2007 TSMC ISSCC2007 ISSCC2007 /DAC (regulation) (AGC) ADC/DAC AD AD AD [] AD CMOS SAR ADC Gr),,
More informationArduino UNO IS Report No. Report Medical Information System Laboratory
Arduino UNO 2015 2 25 IS Report No. Report Medical Information System Laboratory Abstract ( ) Arduino / Arduino Bluetooth Bluetooth : Arduino Arduino UNO Arduino IDE micro computer LED 1............................
More information1
3-1-2 156 Mbps Ultrahigh-Speed Wireless LAN Prototype in the 38GHz Band Gang Wu, Masugi INOUE, Homare MURAKAMI, and Yoshihiro HASE This paper describes a 156 Mbps ultrahigh-speed wireless LAN operating
More informationuntitled
/Si FET /Si FET Improvement of tunnel FET performance using narrow bandgap semiconductor silicide Improvement /Si hetero-structure of tunnel FET performance source electrode using narrow bandgap semiconductor
More informationLMC6022 Low Power CMOS Dual Operational Amplifier (jp)
Low Power CMOS Dual Operational Amplifier Literature Number: JAJS754 CMOS CMOS (100k 5k ) 0.5mW CMOS CMOS LMC6024 100k 5k 120dB 2.5 V/ 40fA Low Power CMOS Dual Operational Amplifier 19910530 33020 23900
More informationレーザ誘起蛍光法( LIF法) によるピストンの油膜挙動の解析
Analysis of Piston Oil Film Behavior by Using Laser Induced Fluorescence Method Shuzou Sanda, Akinori Saito ( Laser Induced Fluorescence Method LIF ) LIF Scanning -LIF Abstract Analysis of the oil film
More information5b_08.dvi
, Circularly Polarized Patch Antennas Combining Different Shaped Linealy Polarized Elements Takanori NORO,, Yasuhiro KAZAMA, Masaharu TAKAHASHI, and Koichi ITO 1. GPS LAN 10% [1] Graduate School of Science
More information, [g/cm 3 ] [m/s] 1 6 [kg m 2 s 1 ] ,58 1, ,56 1, , ,58 1,
264 72 5 216 pp. 264 272 * 43.3. k, Yj; 43.38.Hz 1. 2. 2.1 1 4.8 1 2 [kg m 2 s 1 ] 1.2 1 3 [g/cm 3 ] 34 [m/s] 1.48 1 6 [kg m 2 s 1 ] 1 [g/cm 3 ] 1,48 [m/s] 1, 1 4 1 2,5 1 Tutorial on the underwater or
More informationuPC2745TB,uPC2746TB DS
Bipolar Analog Integrated Circuits 3 V IC µpc275tb, µpc27tb IC3 V V NESAT ft = 2 GHz IC VCC = 2.73.3 V VCC = 3.3 V µpc275tbfu = 2.7 GHz TYP. @3 db µpc27tbfu = 1.5 GHz TYP. @3 db µpc275tbisl = 38 db TYP.
More informationuntitled
2006.2.27 Fantastic Voyage 1966 1 2006.2.27 Fantastic Voyage 2006.2.27 2 2006.2.27 How Small is Micro & Nano? 1mm 10µm 2nm 1m DNA 10 2 10 10 0 10-1 10-2 10-3 10-4 10-5 10-6 10-7 10-8 10-9 10-10 (m) Macroscopic
More informationuntitled
2013 74 Tokyo Institute of Technology AlGaN/GaN C Annealing me Dependent Contact Resistance of C Electrodes on AlGaN/GaN, Tokyo Tech.FRC, Tokyo Tech. IGSSE, Toshiba, Y. Matsukawa, M. Okamoto, K. Kakushima,
More informationnews
ETL NEWS 1999.9 ETL NEWS 1999.11 Establishment of an Evaluation Technique for Laser Pulse Timing Fluctuations Optoelectronics Division Hidemi Tsuchida e-mail:tsuchida@etl.go.jp A new technique has been
More informationIPSJ SIG Technical Report 1, Instrument Separation in Reverberant Environments Using Crystal Microphone Arrays Nobutaka ITO, 1, 2 Yu KITANO, 1
1, 2 1 1 1 Instrument Separation in Reverberant Environments Using Crystal Microphone Arrays Nobutaka ITO, 1, 2 Yu KITANO, 1 Nobutaka ONO 1 and Shigeki SAGAYAMA 1 This paper deals with instrument separation
More informationNo Slide Title
1 2 3 4 5 6 7 8 9 60 50 40 30 20 10 0 10 Computer 4-Port Hub PoE Clock PDA or Tablet VoIP Phone Wireless Access Point IP Security Camera Laptop Watts Power Consumption (W atts) Range of Operation 11 Switching
More informationデジタルICの電源ノイズ対策・デカップリング
RoHS RoHS 2011/65/EU RoHS Web RoHS http://www.murata.co.jp/info/rohs.html IC 1-1 IC Power Distribution Network PDN 1-2 Power Integrity PI 1) 2) 1-3 3) 4) 5) 1-4 1 2 IC IC IC 1-3 1-3 (1) (2) (3) 3 IC
More informationJAJP.indd
Agilent Application Note 1....1 2. MIMO...2 2.1...2 2.2 MIMO...3 3. Agilent MIMO...4 3.1 P...4 3.2 U2000 USB...7 4....10 4.1 P...11 4.2 U2000...16 2 T 0 T 1 = 1.15 0.26 0.39 1.03 R 0 R 1 CB.log 2 1 C MIMO
More information空気の屈折率変調を光学的に検出する超指向性マイクロホン
23 2 1M36268 2 2 4 5 6 7 8 13 15 2 21 2 23 2 2 3 32 34 38 38 54 57 62 63 1-1 ( 1) ( 2) 1-1 a ( sinθ ) 2J D ( θ ) = 1 (1-1) kaka sinθ ( 3) 1-2 1 Back face hole Amplifier Diaphragm Equiphase wave surface
More informationuPC2709T DS
Bipolar Analog Integrated Circuit 5 VIC BS/CS1 stific NESAT TM ft = 20 GHz IC fu = 2.3 GHz TYP.3 db POsat= 11.5 dbmf = 1 GHz, VCC = 5.0 V0.5 V GP = 23 db TYP.f = 1 GHz 50 Ω BS/CS1 stif BS/CS1 stif -E3
More information研究成果報告書
., SUS34 Inconel6, Cr,.,, Cr,. Cr Cr,., Cr,,,.,,,,.,.,,,.,,.,,., SUS34, Inconel6,. (). CoZrNb, -2 m.,., 9. Cu, 2 m. SUS34, Inconel6 SUS34, Inconel6, 5mm mmmm.,,,. (2) (HP8752A).,. - MHz, -2 dbm.,. (3)
More informationパナソニック技報
Panasonic Technical Journal Vol. 63 No. 1 May 2017 Development of Simultaneous-Capture Wide-dynamic-range Technology and Global Shutter Technology for Organic Photoconductive Film Image Sensor Masashi
More informationFig. 2 Signal plane divided into cell of DWT Fig. 1 Schematic diagram for the monitoring system
Study of Health Monitoring of Vehicle Structure by Using Feature Extraction based on Discrete Wavelet Transform Akihisa TABATA *4, Yoshio AOKI, Kazutaka ANDO and Masataka KATO Department of Precision Machinery
More informationCompany_2801.ai
Park Systems www.parkafm.co.jp Park Systems Enabling Nanoscale Advances ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ ㅣ Courtesy NASA/JPL-Caltech Park Systems Enabling Nanoscale Advances 5 98 988 997 Prof. C.F. Quate
More informationスライド 1
swk(at)ic.is.tohoku.ac.jp 2 Outline 3 ? 4 S/N CCD 5 Q Q V 6 CMOS 1 7 1 2 N 1 2 N 8 CCD: CMOS: 9 : / 10 A-D A D C A D C A D C A D C A D C A D C ADC 11 A-D ADC ADC ADC ADC ADC ADC ADC ADC ADC A-D 12 ADC
More informationLMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifi(jp)
LMV851,LMV852,LMV854 LMV851/LMV852/LMV854 8 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Literature Number: JAJSAM3 LMV851/LMV852/LMV854 8MHz CMOS EMI LMV851/LMV852/LMV854 CMOS IC 40 125 LMV851/
More informationスライド 1
CMOS : swk(at)ic.is.tohoku.ac.jp [ 2003] [Wong1999] 2 : CCD CMOS 3 : CCD Q Q V 4 : CMOS V C 5 6 CMOS light input photon shot noise α quantum efficiency dark current dark current shot noise dt time integration
More information3 16 2 27 4497 LAN(Local Area Network) OFDM(Orthogonal Frequency Division Multiplexing) 12 3 3 12 3 12 33. F/B 22.7dB 3 F/B i 1 1 2 3 8 2.1................................. 8 2.2.............................
More informationリードタイプ円板型セラミックコンデンサ(安全規格認定品)樹脂モールド面実装タイプセラミックコンデンサ(安全規格認定品)
!! !! D max. e F±1.0 T max. 25.0 min. 3.0 max. ød (in mm) Lead Code Coating Extension e ød A3 Up to the end of crimp 0.6±0.05 D max. T max. e F±0.8 Lead Code J3 3.5± 1.0 0.5 Coating Extension e ød Up
More information42 1 Fig. 2. Li 2 B 4 O 7 crystals with 3inches and 4inches in diameter. Fig. 4. Transmission curve of Li 2 B 4 O 7 crystal. Fig. 5. Refractive index
MEMOIRS OF SHONAN INSTITUTE OF TECHNOLOGY Vol. 42, No. 1, 2008 Li 2 B 4 O 7 (LBO) *, ** * ** ** Optical Scatterer and Crystal Growth Technology of LBO Single Crystal For Development with Optical Application
More informationIntroduction to Microfabrication
2005 Introduction to Microfabrication 1 1.1 Microfabrication disciplines Microfabrication technologies IC industry and related industries MEMS, solar cells, flat-panel displays, optelectronics In-plane
More informationpp d 2 * Hz Hz 3 10 db Wind-induced noise, Noise reduction, Microphone array, Beamforming 1
72 12 2016 pp. 739 748 739 43.60.+d 2 * 1 2 2 3 2 125 Hz 0.3 0.8 2 125 Hz 3 10 db Wind-induced noise, Noise reduction, Microphone array, Beamforming 1. 1.1 PSS [1] [2 4] 2 Wind-induced noise reduction
More informationxEffect_SG_MV_Part2_E_xEffect_SG_MV_E
Miniature Circuit Breakers FAZ-NA, FAZ-RT, FAZ-DU SG56912 FAZ-NA/-RT/-DU According to UL 489, CSA C22.2 No. 5 and also IEC 60947-2 standard For Applications, wich are permitted for UL 1077 or CSA C22.2
More information10 nm SThM Fig.1 AFM 6) AFM 7) Fig.1 AFM 0.1 N/m 100 pn 10 nn 8) SThM STM AFM RTD Resistance Temperature Device SNOM Scanning Near-field Optical Micro
@@@@@@@@@@@@@@ @@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@@
More informationsumi.indd
S/N S/N CCDCMOS CCD CMOS & E-mail hirofumi.sumi@jp.sony.com & E-mail Tadakuni.Narabu@jp.sony.com & E-mail Shinichiro.Saito@jp.sony.com Hirofumi SUMI, Non - Member and Tadakuni NARABU, Member and Shinichiro
More information2). 3) 4) 1.2 NICTNICT DCRA Dihedral Corner Reflector micro-arraysdcra DCRA DCRA DCRA 3D DCRA PC USB PC PC ON / OFF Velleman K8055 K8055 K8055
1 1 1 2 DCRA 1. 1.1 1) 1 Tactile Interface with Air Jets for Floating Images Aya Higuchi, 1 Nomin, 1 Sandor Markon 1 and Satoshi Maekawa 2 The new optical device DCRA can display floating images in free
More informationLM7171 高速、高出力電流、電圧帰還型オペアンプ
Very High Speed, High Output Current, Voltage Feedback Amplifier Literature Number: JAJS842 2 1 6.5mA 4100V/ s 200MHz HDSL 100mA 15V S/N ADC/DAC SFDR THD 5V VIP III (Vertically integrated PNP) 19850223
More informationANJ_1092A
Application Note SBAA066 ± ± ± ± µ ± ± ± ± 24 Bits 20/24MSB 2 s f S 768 khz 25 MHz (1) V IH 2.0 5.0 V (1) V IL 0 0.8 V (2) V IH 3.0 0 V (2) V IL 5.0 4.2 V (1) I IH V IH = V DD ±10 µa (1) I IL V IL = 0V
More informationICS-01B-◇◇◇
ICS-02B-812 255 ... 4 Abstract... 4 1... 5 1.1... 5 1.2... 6 1.3... 7 2... 8 2.1... 8 2.2... 10 2.3...11 2.4... 13 2.5 2... 14 3... 16 3.1... 16 3.2... 17 4 2... 20 4.1... 20 4.2... 24 4.3... 27 4.4...
More informationLMC6082 Precision CMOS Dual Operational Amplifier (jp)
Precision CMOS Dual Operational Amplifier Literature Number: JAJS760 CMOS & CMOS LMC6062 CMOS 19911126 33020 23900 11800 ds011297 Converted to nat2000 DTD Edited for 2001 Databook SGMLFIX:PR1.doc Fixed
More informationNL-22/NL-32取扱説明書_操作編
MIC / Preamp ATT NL-32 A C ATT AMP 1 AMP 2 AMP 3 FLAT FLAT CAL.SIG. OVER LOAD DET. AMP 4 AMP 5 A/D D/A CONV. AMP 6 AMP 7 A/D CONV. Vref. AMP 8 AMP 10 DC OUT AMP 9 FILTER OUT AC DC OUT AC OUT KEY SW Start
More informationPowerPoint Presentation
/ 2008/04/04 Ferran Salleras 1 2 40Gb/s 40Gb/s PC QD PC: QD: e.g. PCQD PC/QD 3 CP-ON SP T CP-OFF PC/QD-SMZ T ~ps, 40Gb/s ~100fJ T CP-ON CP-OFF 500µm500µm Photonic Crystal SMZ K. Tajima, JJAP, 1993. Control
More informationRS 175
RS 175 Digital Wireless Headphone System ... 2 RS 175... 4... 5... 6 HDR 175... 6 TR 175... 7... 8 RS 175... 11...11...12 AC...16...17...18...19 RS 175... 20...20...21...21 /...21 /...22 Dynamic Bass
More informationDPA,, ShareLog 3) 4) 2.2 Strino Strino STRain-based user Interface with tacticle of elastic Natural ObjectsStrino 1 Strino ) PC Log-Log (2007 6)
1 2 1 3 Experimental Evaluation of Convenient Strain Measurement Using a Magnet for Digital Public Art Junghyun Kim, 1 Makoto Iida, 2 Takeshi Naemura 1 and Hiroyuki Ota 3 We present a basic technology
More information