J-PARC E15 K K-pp Missing mass Invariant mass K - 3 He Formation K - pp cluster neutron Mode to decay charged particles p Λ π - Decay p Decay E15 dete

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1 J-PARC E15 (TGEM-TPC) TGEM M1 ( ) J-PARC E15 TPC TGEM TGEM

2 J-PARC E15 K K-pp Missing mass Invariant mass K - 3 He Formation K - pp cluster neutron Mode to decay charged particles p Λ π - Decay p Decay E15 detector setup Cylindrical Detector System p n Neutron ToF Wall 1GeV/c K- beam p π Beam Sweeping Magnet

3 K-p Λ(1405) Σ π K-pp Σ π Σ CDS Σ ± π ± +n Z (ZVC) mm (CDS ) σ ZVC z-resolution[mm] Λ pπ-

4 TPCのデザイン CDS : Cylindrical Detector System TGEM TPC φ170mm φ280mm ~500mm Field cage drift lengt field strip FPC基盤 8mm strip 10mm pitch double sided Thick-GEM R/O pad h ~300mm pad size 4mm 20mm R/O前の増幅器 として用いる イオンフィード バックを抑制する 可能性がある for preamp pad数 4 4 9=144 表面 裏面

5 TGEM ( ) 1 double-clad G10(FR4) PCB foil-gem ( ) (Rim) Rim gain TGEM TGEM@RIKEN Rim 100µm :400µm ΔV GEM 1kV Garfield

6 使用したTGEMのパラメーター 林栄精器にて以下の6種類のTGEMを作成 TGEM# #0 #1 #2 #3 #4 #5 (Resis2ve) 厚さ[µm] 穴の直径[µm] Rim[µm] No 50 No No 穴のピッチ [µm] 大きさ [cm2] 10 x 10 重要なのは 厚さ:400µm or 200µm 穴径:300µm or 500µm Rim:有り or 無し 極板:銅 or Carbon TGEM Cu electrode #5 RTGEM Carbon(graphite) electrode 特性 放電に強い HV

7 Test chamber setup test chamber 55 Fe Double GEM setup drift mesh 11mm 2mm 2mm E drift E trans E induct TGEM 1 TGEM 2 R/O pad R/O pad gas P10, 1atm HV divider pad16ch 1 (τ=80ns) oradc HV divider

8 Double TGEM #5 P10, 1atm ΔV GEM = 944V 55 Fe X-ray gain res~10%(σ) ADC Amplifier-Shaper-Discriminator (ASD) TDC TGEM study Vth effective gain ~1 10 4

9 TGEM TGEM# #0 #1 #2 #3 #4 gain #5 (Resis2ve) [µm] [µm] Rim[µm] No 50 No No 400µm 300µm TGEM gain E drift =150V/cm ΔV GEM : E trans : E induct 1 : 2.5 : spark Rim Maxgain effective gain ΔV GEM [V] gain TGEM#0,#1 gain~ RTGEM(#5) Rim Carbon gain

10 TGEM 1 ΔVGEM=1200V E induct gain 1 11mm 2mm 55 Fe E drift E induct Single GEM setup drift mesh TGEM R/O pad E drift =150V/cm ΔV GEM E induct 1200V effective gain Δ GEM [S.Bachmann et al., NIM A438, 376 (1999).] foil-gem 8kV/cm E induct linear-scale gain TGEM E induct gain E induct [kv/cm]

11 gain 2 RTGEM(#5) 2 E induct HV divider 4 ΔVGEM 11mm 2mm 2mm 55 Fe E drift E trans E induct Double GEM setup drift mesh TGEM 1 TGEM 2 R/O pad E drift =150V/cm ΔV GEM : E trans : E induct type1 1 : 2.5 : 2.5 type2 1 : 2.5 : 5 type3 1 : 2.5 : 6.25 type4 1 : 2.5 : E E effective gain gain 1.E E E induct dependence RTGEM(#5) type1 type2 type3 type4 spark E trans type2-2 1 : 5 : 5 gain E trans dependence type2 type2 2 1.E ΔVGEM[V] ΔV GEM [V] ΔV GEM [V] RTGEM E induct gain1 10 4

12 TGEM# #0 #5 (Resis2ve) Rim[µm] 100 No HV divider type3 type4 E drift =150V/cm ΔV GEM : E trans : E induct type3 1 : 2.5 : 6.25 type4 1 : 2.5 : 7.5 corrected relative gain (corrected by P/T[hPa/K]) #0 gain #0 gain #5 gain #5 gain time[h] peak resolution(σ)[%] #0 gain #0 gain #5 gain #5 gain gain time[h] Rim Rim RTGEM gain

13 E15 CDS upgrade TGEM TPC TGEM Rim TGEM gain Rim RTGEM E induct gain RTGEM ion-feedback study 4 study 2009 TGEM-TPC

14

15 Back up

16 p/t dependence single GEM of #0 GEM gain P/T peak ratio P/T peak ratio

17 effective gain E E+04 gain E E+02 1.E+01 E induct dependence TGEM w/rim type1 type2 type3 type ΔVGEM[V] ΔVGEM[V] gain spark effective gain E E+04 gain E E+02 1.E+01 E induct dependence RTGEM type1 type2 type3 type4 E drift =150V/cm ΔV GEM : E trans : E induct type1 1 : 2.5 : 2.5 type2 1 : 2.5 : 5 type3 1 : 2.5 : 6.25 type4 1 : 2.5 : ΔVGEM[V] ΔVGEM[V] ΔVGEM spark

18 gain Hz gain Hz Spark rate #5

19 E induct parallel plate multiplication

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