日立評論 2016年5月号：収差補正器のSTEM（HD-2700），TEM（HF-3300S），1.2 MV FIRSTプログラム向け開発，そして将来への展望
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1 明日の科学と社会の発展に貢献する計測 分析技術 収差補正器の STEM(HD-27),TEM(HF-33S), 1.2 MV FIRST プログラム向け開発, そして将来への展望 Prof. Dr. Max. Haider Dr. Heiko Müller [ 特集監修者抄録 ] 電子顕微鏡では, 電子レンズが持つ球面収差により, 分解能向上が長らく阻まれてきた 199 年代中盤にようやく, 成功し, 世界最高分解能の達成に大きく貢献した これらの開発では, 高電圧 超高電圧に対応した球面収差補正器の開発とともに, 電子顕微鏡本体も安定性を大幅に高 この球面収差を補正する装置が開発された しかし, 高加速電圧なSTEM TEM への搭載には多くの技術課題があった 日立製作所 日立ハイテクノロジーズでは, 球面収差補正器の実用化開発を進める CEOS 社と共同で, 球面収差補正器を搭載した 2 kv STEM,3 kv TEM める必要があり, 緊密な協力体制により, 技術課題を一つ一つ解決していった 本稿では,CEOS 社を創設し, 球面収差補正器の開発を率いてきた Max. Haider 氏に,CEOS 社と日立製作所 日立ハイテクノロジーズとの共同開発を総括していただ を開発し, 分解能の大幅な向上を実現した さらに 1.2 MV 原子分解能 ホログラフィー電子顕微鏡への搭載にも いた 1. Cs 1 2 kv TEM Transmission Electron Microscope 1 STEM Scanning Transmission Electron Microscope TEM/STEM Cs Microscopy & Microanalysis 23 STEM HD Cs CsCcCs Cs Correct 2 STEM 3 C-FEG Cold Field-emission Gun 3 kvs TEM HF33S Lorentz 3 FIRST 1.2 MV HF33S 3 kv C-FEG 2. 2 kv STEM 2 Rose Cs 2 kv TEM TEM Vol.98 No
2 Aperture Axial ray BTlt BSh DPH2 DP22 DP21 DPH1 DP1a HPol QPol DP11 DP12 Spec. plane CL2 Field ray ADL HP2 TL22 TL21 HP1 TL1a Upper scan coil Lower scan coil OL pre OL post CL ADL OL TL HP DP, QP DP QP 1 STEM OL HP12 TL1 TL1a2 HP1 HP2 TL21 TL22 DP QP axial ray field ray TL STEMCs TEM STEM Cs 2 8 kv HD- 27 C-FEG X nm.5.1 Cs 2 m E.35 ev Cc 1.55 mm E 2 kev Y nm pm kv.3 ev FWHM mrad a b Cs Cc EE 2 a 2 kv FWHME b
3 3 15 OL TL11 TL12 TL21 TL22 TL31 TL32 ADL1 mm HP1 HP21 HP22 HP3 HP41 HP42 HP u u C c Z mm 3 OL B-COR u u CcHP1/HP3/HP5 HP21/HP22 HP41/HP42 7 Z Z 62 3 SE Secondary Electron kv TEM aplanatic 2 TEM semi-aplanatic aplanatic aplanatic 3HF33S TEM aplanatic 3 mrad 3 kv 7 pm k x 4k 8k x 8k HF33S 6 pm 7 pm 8 pm kv4 s 38.3 nm -1 7 pm Vol.98 No
4 2 a 1 nm.5 nm.9 nm b 5 A 1G 6 kv 7 nma b Crocidolite asbestos fiber 8 HF33S 9 Pole Piece Lorentz Cs STEM in-situ labin-the-gap 8 TEM 5 nm 1 nm 1 6 Lorentz 5Å C. Gatel & E. Snoeck, CEMES-CNRS, Toulouse France Cs Lorentz 6 6 CEMES 7 E. Snoeck HF33S 4. DCOR Cold-FEG STEM 6 Lorentz Lorentz 7 Center for Materials Elaboration and Structural Studies MV Cs 212 FIRST TEM Cs Cs 8 in-situ lab-in-the-gap
5 2 CEOS Cs Lorentz 1 TEM FIRST CEOS Lorentz 7 44 pm 9 GaN pm 43 pm a b c B A 44 pm A 2 pm N Ga 44 pm B 1 M. Haider, et al.: Electron Microscopy Image Enhanced, Nature, 392, pp H. Rose: Outline of a Spherically Corrected Semiaplanatic Medium-voltage Transmission Electron-microscope, Optik, 85 1, pp K. Nakamura, et al.: Hitachi s Spherical Aberration Corrected STEM: HD-27, Hitachi Review 56, pp Aug Y. Zhu, et al.: Imaging Single Atoms Using Secondary Electrons with an Aberration-corrected Electron Microscope, Nature Materials, 8 1, pp , Y. Zhu et al.: Imaging Single Atoms Using Secondary Electrons with an Aberration-corrected Electron Microscope, Nature Materials 8, pp M. Haider, et al.: Present and Future Hexapole Aberration Correctors for Highresolution Electron Microscopy, Advances in Imaging and Electron Physics, 153, pp H. Müller, et al.: Aplanatic Imaging Systems for the Transmission Electron Microscope, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 645 1, pp I. Maßmann, et al.: Realization of the First Aplanatic Transmission Electron Microscope, Microscopy and Microanalysis, 17 S2, p H. Müller, et al.: Advancing the Hexapole Cs-corrector for the Scanning Transmission Electron Microscope, Microscopy and Microanalysis, 12 6, pp T. Sato, et al.: Hitachi s High-end Analytical Electron Microscope: HF-33, Hitachi Review 57, pp Jun T. Akashi, et al.: Aberration Corrected 1.2-MV Cold Field-emission Transmission Electron Microscope with a Sub-5-pm Resolution, Applied Physics Letters, 16 7, A B 7 GaN Ga a GaN 411 TEM44 pm Ga b c b A BGa Ga T. Akashi, et al., Appl. Phys Let. 16 7, 7411, 215 Prof. Dr. Max. Haider CEOS Dr. Heiko Müller CEOS Vol.98 No
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フォーラム収差補正器を搭載した走査透過電子顕微鏡 (HD-2700) による原子分解能二次電子像観察 稲田博実, 田村圭司, 佐藤高広, 鈴木裕也, 今野充, 中村邦康 ( 株 ) 日立ハイテクノロジーズ科学 医用システム事業統括本部連絡先 inada-hiromi@naka.hitachi-hitec.com Abstract: 近年の収差補正技術の発展に伴う電子顕微鏡の高分解能化は 半導体や機能性材料開発の分野においてサブナノメートル領域の像観察
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3 3.1 3.1.1 kg m s J = kg m 2 s 2 MeV MeV [1] 1MeV=1 6 ev = 1.62 176 462 (63) 1 13 J (3.1) [1] 1MeV/c 2 =1.782 661 731 (7) 1 3 kg (3.2) c =1 MeV (atomic mass unit) 12 C u = 1 12 M(12 C) (3.3) 41 42 3 u
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