,,., (,, SiO 2, Si-N, ),,,,,.,.,,, (Schottky). [ ].,..,.,., 1 m µm 10., 10 5, [ ] (6N-103)..,.,. [ ] 1. (,, ) :,.,,.., (HF),.

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1 ,,., (,, SiO 2, Si-N, ),,,,,.,.,,, (Schottky). [ ].,..,.,., 1 m µm 10., 10 5, [ ] (6N-103)..,.,. [ ] 1. (,, ) :,.,,.., (HF),.

2 18 2,,.,,. 2.,,,.,,.

3 , (Schottky),,,. 2. Schottky I V, C V,, Schottky ,,, (space charge layer) (barrier)., /n, (+)/ ( ), /p, ( )/ (+). 2.1,. φ B, φ M φ S φ M χ S, V d ( ) φ M., (Walter Schottky, ) Schottky. B V d V f Au n Si 2.1 Au - n Si Schottky.

4 20 2 log I f log I s 2.2 Shottky. V ( ) V I,, I = I s [exp ( ) ] qv 1 ηkt (2.1). q, k Boltzman, T, η empirical constant ( ideality factor ) 1., I s, Richardson constant A, S, I s = SA T 2 exp ( ) qφb kt (2.2). A = 120 (A/cm 2 /K 2 ). (2.1), I f = I s exp ( ) qv ηkt (2.3), 2.2, log I f V, log I f, I s. I s, B 1 n, Schottky.

5 (2), B = kt q ln I s (2.4) SA T 2. Empirical constant η, Schottky η = 1, (recommbination-generation current), η = 2. η, 2,,, log I V η ( )/n Si Schottky V I. (1) η = 1.01 V I.,. (2) (excess current), η = (3),, η = 1.2 Schottky,. (4), (a) ( ) ULVAC VPC-260 (b) K-157MP (c) SCT-5T (d) Shimazu CR-2000 (e) 40 MHz KENWOOD CS-4035 (f) Kikusui PAL35-20 (g) SOAR MC-535A 2 (h) Shimadzu CR-2000 /,.,,. 1.,,. 2., PURIC,. Si, (100), P-dope, n-, Ω cm.

6 (4) (3) (2) 10-4 (1) I f [A] (1) Pt 2 Si/n-(100)Si (2) PtSi/n-(100)Si (3) IrSi/n-(111)Si (4) NiSi/n-(100)Si V [V] 2.3 /n Si Schottky.

7 [ 1 ] ( ) 4 Si 2, ( ). 5, HCl H 2 O 2 10cc, 10.,. 5, Si. SiO 2 (H 2 O : HF 100 : 1), 5 mm,. 1,, HF. 1, 2 cm.. SiO 2, Si..,., kg/cm 2..,. ** **,,.,,. (Ta) ( 0.5 mm, 10 mm).. RP SW ON,, ROUGH, 5, CLOSE, FORE WAY. 3, TP SW ON, STRAT, MAIN V.,. 15.,., 18 % (50 A),., 20 % (55 A ),,..

8 24 2,,,,,,. 370 C ( = 2.7),, 3 (Au-Si, 2 ). + 1, ( ),. SiO 2 (H 2 O : HF 100 : 1), 1 cm,,. 30,,. SiO 2, Si. 1., HF..,, 3. 1 cm.,..,.,.,..,,.. Ta ( 0.5 mm, 30 mm).., 0.2, 0.4, 0.6, 0.8, 1.0 mm. RP SW ON,, ROUGH, 5, CLOSE, FORE WAY. MAIN V., Ohmic contact :,.

9 ,.,., 18 %,., 20 % ( 55 A ),, 6..,,,,,.,,., ,, STOP. 10,, CLOSE, TP SW OFF. RP SW OFF, ( ).,,.,, ( ),. [ 2 ] pn, A, K, V I.,,,.,, CRT,.

10 k V D I = V i /100 k V i 2.4 I V. V I., I s. V D I 2.4 2, 100 kω., V I.., I s, η(n)., mv.,,., (100 kω), (, V (V)/ (Ω)), khz (±1 V), Schottky pn.. 1 µf PN R V 10 k cm.

11 : : V-I 3. V-I η(n) I s. φ B. 4. (C V ). φ B, V d, n Si N. 5. pn, ,. 2. pn,,

12 , ( 1 ). [ ],., SI Pa., Torr. 1 Pa = Torr 400/3 Torr,. (Low Vacuum) : 100 Pa (Medium Vacuum) : Pa (High Vacum) : Pa (Ultra High Vacuum, UHV) : 10 5 Pa (Extreamly High Vacuum, XHV) : 10 7 Pa. [ ],,., (Roughing). 1. : (a) (b) ( ),,. 2. : (a),,,.. (b),.. T i,, T i Torr. (c) He,,..

13 ( ) 1. (CH 3 COCH 3 ) :,. m.p.= C, b.p.=56.30 C. 3 ; 18 C,.,. 2. (Cl 2 C=CHCl) : ; 87 C. m.p.= 73 C, b.p.=87.2 C..,,.,.,,. ** **,,.. 3. (C 2 H 5 OH) : m.p.= C, b.p.=78.3 C 1. (HCl) :.,.. 2. (H 2 SO 4 ) :.,.,,,. 3. (HNO 3 ) :.,. 4. (HF) : (SiO 2 ), (H 2 O 2 ) :.. ( ),. 3 m.p.(melting point), b.p.(boiling point).

jse2000.dvi

jse2000.dvi pn 1 2 1 1947 1 (800MHz) (12GHz) (CPUDSP ) 1: MOS (MOSFET) CCD MOSFET MES (MESFET) (HBT) (HEMT) GTO MOSFET (IGBT) (SIT) pn { 3 3 3 pn 2 pn pn 1 2 sirafuji@dj.kit.ac.jp yoshimot@dj.kit.ac.jp 1 3 3.1 III