D IEEJ Transactions on Industry Applications Vol.133 No.3 pp DOI: /ieejias DC-DC Principle of Surge Voltage of a Rectifier in I

Size: px

Start display at page:

Download "D IEEJ Transactions on Industry Applications Vol.133 No.3 pp DOI: /ieejias DC-DC Principle of Surge Voltage of a Rectifier in I"

ゆたかおうじ
4 years ago
Views:

1 D IEEJ Transactions on Industry Applications Vol.133 No.3 pp DOI: /ieejias DC-DC Principle of Surge Voltage of a Rectifier in Isolated DC-DC Converters and Snubber Circuit Design Method Koji Orikawa, Student Member, Jun-ichi Itoh,Member This paper clarifies the principle of the surge voltage of a rectifier diode that is connected to a transformer in an isolated power converter. It is confirmed that the theoretical vibrational frequency of the diode voltage in the equivalent circuit is in agreement with the experimental result. In addition, the design method of the RC snubber circuit is discussed by using the equivalent circuit consisting of a transformer, a snubber circuit, and a diode. Finally, the validity of the design method is confirmed by the experimental results. DC-DC Keywords: isolated DC-DC converters, rectifier diode, surge voltage, snubber circuit 1. SiC GaN (1) (5) (6) (9) (10) (1) Nagaoka University of Technology , Kamitomioka, Nagaoka , Japan (13) (15) SiC GaN DC-DC RC RC. Fig. 1 DC-DC c 013 The Institute of Electrical Engineers of Japan. 350

2 Fig. 1. Full bridge isolated DC-DC converter. 1 Fig. (a) (b) Fig. 1 Fig. (c) (d) R Don R Doff V F C R L L out Fig. (a) V p V in V in L D 1 D 1 D 3 D 1 D 3 Fig. (b) D 1 V D1 V F D 1 R Doff C C L C i L v L = L(di L /dt) L D 1 L L di L /dt v L L Fig. 3 Fig. (b) I out D D 3 I out i D1 (a) Overlapping period in commutation (b) When surge voltage occur in D 1 (c) Voltage and current waveforms (d) Enlarged waveforms Fig.. Equivalent circuit of secondary part in Fig. 1. I out i D1 Fig. 3 V se I D1 (s) (1) I D1 (s) = 1 V se I out (R + R Don ) { } s R Doff (R + R Don ) + Ls scr Doff (1) s V se I D1 (s) I out 351 IEEJ Trans. IA, Vol.133, No.3, 013

3 Table 1. Conditions of simulation circuit. Input Voltage V in 48 (V) Output current I out 10 (A) Output inductance L out 0.5 (mh) Output capacitance C out 00 (μf) Switching frequency f sw 0 (khz) Winding resistance R 53 (mω) Leakage inductance L 8.6 (μh) Turn ratio n n = N 1 /N =.5 Parasitic capacitance C 00 (pf) On resistance R Don (Ω) Off resistance R Doff 1(kΩ) Forward voltage V F 0.86 (V) Fig. 3. Simplified circuit of Fig. (b). Fig. 3 I D1 (s) v D1 (s) () R Doff v D1 (s) = I D1 (s) () 1 + scr Doff () (1) v D1 (t) (3) { ( v D1 (t) = I st R Doff 1 e τt cos ω vib t + τ )} sin ω vib t ω vib V F (3) I st τ ω vib I st τ ω vib (4) (6) I st = V se I out (R + R Don ) R + R Don + R Doff (4) CRR Doff + CR DonR Doff + L τ = (5) LCR Doff R + RDon + R CRR Doff + CR DonR Doff + L Doff ω vib = LCR Doff LCR Doff (6) f vib (6) ω vib (7) f vib = ω vib (7) π (3) (3) v D1max (8) ( ) v D1max = I st R Doff 1 + e τ f vib VF (8) (8) R L C (4) (7) (b) Surge voltage of the diode Voltage waveforms and surge voltage (R is vari- Fig. 4. able). (a) Voltage waveform of the diode 3. () (8) R L C () (8) Table R Fig. 4 (a) R Fig. 4(b) Fig. 4 R R R 3 L Fig. 5(a) L Fig. 5(b) Fig. 5 L L 35 IEEJ Trans. IA, Vol.133, No.3, 013

4 (a) Voltage waveform of the diode (a) Voltage waveform of the diode (b) Surge voltage of the diode Fig. 5. Voltage waveforms and the surge voltage (L is variable). (b) Surge voltage of the diode Fig. 6. Voltage waveforms and the surge voltage (C is variable). LC C L (5) τ (7) f vib (8) L di L /dt v L 3 3 C Fig. 6(a) C Fig. 6(b) Fig. 6 C C LC C L di L /dt v L 4. L C Table L R Fig. 7(a) R = 53 mω L = 8.6 μh C = 00 pf Fig. 7(a) Fig. 7(b) (c) R C L Fig. 7 L Fig. 8 L L L Fig. 8(a) (7) Fig. 8(b) 4 C Fig. 9(a) (b) R L C Fig. 9 C Fig. 10 C Fig. 10(a) Fig. 10(b) 353 IEEJ Trans. IA, Vol.133, No.3, 013

5 (a) Vibrational frequency as a function of the leakage inductance (a) Voltage and current waveform (L: 8.6μH) (b) Enlarged voltage and current waveform (L: 8.6μH) (b) Ratio of the surge voltage to the steady voltage as a function of the leakage inductance Fig. 8. Theoretical value and experimental value of the surge voltage and the vibrational frequency (L is variable). (c) Enlarged voltage and current waveform (L: 15.9 μh) Fig. 7. Experimental result (L is variable). (a) Enlarged voltage and current waveform (C: 00 pf) C 1 R L 3 C (b) Enlarged voltage and current waveform of the experiment (C: 00 pf) Fig. 9. Experimental result (C is variable) IEEJ Trans. IA, Vol.133, No.3, 013

6 (a) Vibrational frequency as a function of the parasitic capacitance Fig. 11. Equivalent circuit of the transformer with the RC snubber circuit. (b) Ratio of the surge voltage to the steady voltage as a function of the parasitic capacitance Fig. 10. Theoretical value and experimental value of the surge voltage and the vibrational frequency (C is variable). PSpice Cadence Design Systems RC 1 1 RC RC 1) ) R sn C sn 1/ Fig. 11 Fig. 3 R Doff R Don Fig. 11 Fig. 11 V D1snmax V D1snmax 5 1 ζ Fig. 11 (9) G (s) = (1 + sc sn R sn ) (9) s + ζω n s + ω n ω n ζ ω n (9) V D1snmax V st (10) V D1sn max V st = V se V st ( 1 + e k ) (I outr Don + V F ) V st (10) V se k k (11) ( ζ 1 ζ 1 4ζ ) k = 1 ζ tan 1 ζ ( 1 ζ 3 4ζ ) tan 1 ζ +π (11) (10) (9) V st (3) t (10) Fig. 1 ζ (10) Fig IEEJ Trans. IA, Vol.133, No.3, 013

7 Fig. 1. Designed value of ratio of the surge voltage to the steady voltage. ζ 5 R sn C sn (9) R sn C sn ζ (1) L R sn = ζ (1) C sn (1) C sn R sn (1) C sn (1) R sn C sn C C sn (1) R sn (13) Fig. 11 P sn P sn = R sn R 0 1 ω n ω 0 ω n ω 0 + ω n R sn ω 0 R 0 V se (ω n ) (13) V se ω n n ω 0 R 0 (14) (15) ω 0 = 1 LCsn (14) R 0 = Fig. 13. Flowchart for design of snubber circuit. L C sn (15) Fig. 13 V D1snmax I out R Don V F C L P asn Fig. 1 ζ C ζ (1) (13) P sn P asn P sn P asn C sn 6. Fig. 14 Fig Fig. 15(a) Fig. 15(b) (13) Fig. 356 IEEJ Trans. IA, Vol.133, No.3, 013

8 (a) C/C sn = 10 3 (a) Ratio of the surge voltage to the steady voltage (b) C/C sn = 10 (b) Snubber loss Fig. 15. Ratio of the surge voltage to the steady voltage and the snubber loss as a function of ratio of the parasitic capacitance to the snubber capacitance. (c) C/C sn = 3 10 Fig. 14. Voltage and current waveforms of diode and the current waveform of snubber. Fig. 14 Fig. 15 C sn C Fig. 15(b) (13) (13) (13) Fig. 16 Fig. 14 Fig. 15 C sn C C/C sn 3 10 Fig. 16 Fig. 17 Fig DC-DC RC 357 IEEJ Trans. IA, Vol.133, No.3, 013

9 (a) Without RC snubber (a) I out :10A (b) With RC snubber (ζ: 0.1) (b) I out :5A (c) With RC snubber (ζ: 0.5) Fig. 17. (c) I out :1A Ratio of the surge voltage to the steady voltage. (d) With RC snubber (ζ: 0.8) Fig. 16. Voltage waveforms of the diode with and without the snubber J. Kondoh, T. Yatsuo, I. Ishii, and K. Arai: Estimation of Converters with SiC Devices for Distribution Networks, IEEJ Trans. IA, Vol.16, No.4, pp (006) J. Biela, D. Aggeler, S. Inoue, H. Akagi, and J.W. Kolar: Bi-Directional Isolated DC-DC Converter for Nexr-Generation Power Distribution- Comparison of Converters Using Si and SiC Devices, IEEJ Trans. IA, Vol.18, No.7, pp (008) 3 T. Friedli, S.D. Round, D. Hassler, and J.W. Kolar: Design and Performance of a 00-kHz All-SiC JFET Current DC-link Back-to-Back Converter, IEEE Trans. Industry Applications, Vol.45, No.5, pp (009) 4 R. Simanjorang, H. Yamaguchi, H. Ohashi, T. Takeda, M. Yamazaki, and H. Murai: A High Output Power Density 400/400 V Isolated DC/DC Con- 358 IEEJ Trans. IA, Vol.133, No.3, 013

verter with Hybrid Pair of SJ-MOSFET and SiC-SBD for Power Supply of Data Center, Applied Power Electronics Conference and Exposition (APEC) 010, pp.648 653 (010) 5 J. Biela, M. Schweizer, S.

Industry Applications, Vol.58, No.7, pp.87 88 (011) 6 P. Meng, X. Wu, J. Yang, H. Chen, and Z.

10 verter with Hybrid Pair of SJ-MOSFET and SiC-SBD for Power Supply of Data Center, Applied Power Electronics Conference and Exposition (APEC) 010, pp (010) 5 J. Biela, M. Schweizer, S. Waffler, and J.W. Kolar: SiC versus Si- Evaluation of Potentials for Performance Improvement of Inverter and DC- DC Converter Systems by SiC Power Semiconductors, IEEE Trans. Industry Applications, Vol.58, No.7, pp (011) 6 P. Meng, X. Wu, J. Yang, H. Chen, and Z. Qian: Analysis and design consideration for EMI and losses of RCD snubber in flyback converter, Applied Power Electronics Conference and Exposition, 010, pp (010) 7 A. Abramovitz, C. Tang, and K. Smedley: Analysis and Design of Forward Converter With Energy Regenerative Snubber, IEEE Transaction on Power Electronics, Vol.5, No.3, pp (010) 8 J. Bauman and M. Kazerani: A Novel Capacitor-Switched Regenerative Snubber for DC/DC Boost Converters, IEEE Trans. Industry Applications, Vol.58, No., pp (011) 9 J.-J. Yun, H.-J. Choe, Y.-H. Hwang, Y.-K. Park, and B. Kang: Improvement of Power-Conversion Efficiency of a DC-DC Boost Converter Using a Passive Snubber Circuit, IEEE Trans. Industry Applications, Vol.59, No.4, pp (01) 10 R. Simanjorang, H. Yamaguchi, H. Ohashi, K. Nakano, T. Ninomiya, S. Abe, M. Kaga, and A. Fukui: High-Efficiency High-Power dc-dc Converter for Energy and Space Saving of Power-Supply System in a Data Center, Applied Power Electronics Conference and Exposition (APEC) 011, pp (011) 11 J.-Y. Lee, Y.-S. Jeong, and B.-M. Han: An Isolated DC/.DC Converter Using High-Frequency Unregulated LLC Resonant Converter for Fuel Cell Applications, IEEE Trans. Industry Applications, Vol.58, No.7, pp (011) 1 R. Simanjorang, H. Yamaguchi, H. Ohashi, T. Takeda, M. Yamazaki, and H. Murai: Low Cost Transformer Isolated Boost Half-bridge Microinverter for Single-phase Grid-connected Photovoltaic System, Applied Power Electronics Conference and Exposition (APEC) 010, pp (010) 13 M. Hirokawa and T. Ninomiya: Non-Dissipative Snubber for Rectifying Diodes in a High-Power DC-DC Converter,IEEJ Trans. IA, Vol.15, No.4, pp (005) (in Japanese) DC-DC, D, Vol.15, No.4, pp (005) 14 D. Yoshitomi, J. Itoh, and K. Hirachi: Relationship between Leakage Inductance and Surge Voltage on Isolated DC-DC Converter, Japan Institute of Power Electronics, JIPE-37-3 (011) (in Japanese) DC-DC,, JIPE-37-3 (011) 15 M. Cacciato and A. Consoli: New Regenerative Active Snubber Circuit for ZVS Phase Shift Full Bridge Converter, Applied Power Electronics Conference and Exposition (APEC) 011, pp (011) IEEE 359 IEEJ Trans. IA, Vol.133, No.3, 013

EV Fig.. Contactless power transfer system. (a) Single-sided winding transformer. Fig. 2. Detailed equivalent circuit. x 0, x, x 2 r 0 r, r 2 C P R L

EV Fig.. Contactless power transfer system. (a) Single-sided winding transformer. Fig. 2. Detailed equivalent circuit. x 0, x, x 2 r 0 r, r 2 C P R L D IEEJ Transactions on Industry Applications Vol.32 No. pp.9 6 DOI: 0.54/ieejias.32.9 Novel Core Structure and Iron-loss Modeling for Contactless Power Transfer System of Electric Vehicle Masato Chigira,