Λ (Λ ) Λ (Ge) Hyperball γ ΛN J-PARC Λ dead time J-PARC flash ADC 1 dead time ( ) 1 µsec 3
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2 Λ (Λ ) Λ (Ge) Hyperball γ ΛN J-PARC Λ dead time J-PARC flash ADC 1 dead time ( ) 1 µsec 3
3 γ ΛN KEK J-PARC J-PARC Hyperball-J Flash ADC LNS i
4 A 63 B 64 ii
5 1.1 J-PARC ( ) Hyperball-J ( ) STRUCK SIS3302 Flash ADC ADMCA LNS LNS LNS CRM Flash ADC Reduced χ reduced χ ADC-ADC ADC-TDC iii
6 reduced χ 2 ( ) reduced χ 2 ( ) ( ) reduced χ 2 ( ) reduced χ 2 ( ) reduced χ 2 ( ) reduced χ 2 ( ) reduced χ 2 ( ) reduced χ 2 ( ) ( ) ( ) A A B iv
7 1.1 J-PARC ADC ADC 973U UHA SIS3302 bit Flash ADC ( ) ( ) MeV MeV v
8 1 1.1 γ ΛN Λ S = 1 ( ) Λ Λ Λ Λ ΛN [1] 1970 (K, π ) (π +, K + ) 1.5 MeV(FWHM) 1 (e, e K + ) 0.3 MeV(FWHM) ΛN kev γ Ge kev Ge Hyperball 1998 γ γ Λ ΛN p-shell ΛN [2] 1
9 1.2 KEK J-PARC J-PARC J-PARC (Japan Proton Accelerator Research Complex) J-PARC 1.1 ( ) 50 GeV 10 MHz K 2 K γ E13 [3] p-shell Λ sd-shell Λ 4 ΛHe ΛN 1.1 J-PARC ( ) J-PARC 4 ( ) 50 GeV 10 MHz K 2 2
10 1.2.2 Hyperball-J J-PARC 10 MHz K Hyperball Hyperball-J Hyperball-J [4] [5] Ge photo peak efficiency 1.5 Ge 85K BGO PWO Flash ADC (dead time) Ge crystal PWO counter 1.2 Hyperball-J ( ) Hyperball-J 60 % N Ge 32 ( ) Ge PWO Geant4 1 MeV γ 6% photo-peak efficiency Beam Mechanical cooler 3
11 1.3 Hyperball 1.1 KEK Hyperball-J J-PARC γ Ge Hyperball-J Ge Hyperball-J Ge dead time 1) 1.1 J-PARC KEK K K6 (KEK) K1.8 (J-PARC) π + K 2 MHz 10 MHz( ) Ge 50 khz 250 khz Energy deposit rate 0.5 TeV/s 2.5 TeV/s 50 % 100 % 1) 4
12 Ge ( /cm 3 ) 2.1 NaI Ge Ge Si 100 K 2.1 P N 1 ( ) 5
13 2.1.2 Hyperball-J Ge Hyperball 7 cm ϕ 7 cm l N N Ge N [6] 1) 0.4 µsec Ge Hyperball-J Ge Hyperball energy deposit GeV Ge 10 MeV γ MeV [7] energy deposit rate Ge 2.2 Ge 1) 10 5 m/s 6
14 2.1.4 Ge (2 kev) ( 2 ) 2) γ γ 2.3 S N (peak significance) = S N+S S N (N S) (2.1) σ S S = 2πσ 2 H (2.2) H (S+N) 2 2 σ 2 2 ( ) Ge S N kev γ S( ) N( ) ( ) 2) Hyperball (KEK E566) 4 kev 7
15 Hyperball ADC ORTEC 973U Urtra High-rate Amp. (UHA) UHA 0.5 µsec CR-RC Gated Integrator(GI) UHA Ge 2.4 ADC µsec ADC dead time energy depodit rate dead time 8
16 Flash ADC Hyperball Ge energy deposit rate Flash ADC 3) 973U UHA Gated Integrator CR-RC Flash ADC µsec 1 MHz 2.5 Flash ADC Ge ADC Flash ADC 3) bit 19 bit 9
17 ORTEC 671 CR-RC µsec CR-RC ORTEC Ge (G14) ADC (FWHM) 60 Co 1.33 MeV 1 MeV γ γ γ 10 1 dead time 3.1 ADC 671 [µsec] FWHM [kev] γ [µsec] [µsec] [khz]
18 973U UHA 3.2 UHA Gated Intergrator ( ) 3.2 ADC 973U UHA Gated Integrator [µsec] FWHM [kev] γ [µsec] [µsec] [khz] Flash ADC Flash ADC STRUCK SIS3302, 3.1 VME 100 MHz 16 bit Flash ADC Flash ADC Flash ADC 3.1 STRUCK SIS3302 Flash ADC SIS bit (13 bit ) 100 MHz VME Flash ADC 32 M 5 V ( 5 V + 5 V ) 11
19 3.1.2 Flash ADC bit SIS3302 ADC 16 bit 16 bit ADC Flash ADC bit 3.3 bit RMS 13 bit 13 bit ADC 5 V/2 MeV 0.24 kev Ge 3.3 SIS3302 bit 5 V ch (16 bit) RMS ± 3 ch bit ( bit ) 13 bit ch RMS [ch] mv ADC Ge MHz (PHADC ) ADC SIS3302 ADC 60 Co 1.33 MeV SIS3302 PHADC ADC 3.4 Flash ADC 671 [µsec] FWHM [kev]
20 ADC 60 Co 100 MHz Flash ADC 1 50 MHz ( 3.2) 20 MHz FWHM [kev] Shaping Time [µsec] Sampling Frequency [MHz] 3.2 µ 1 MHz 1 13
21 3.1.3 Ge Amptek ADMCA ADC (MCA8000A) WEB [8] ADMCA 3.3 ADMCA FWHM Ge FWHM ADMCA ADMCA kev 0.1 kev 3.3 ADMCA FWHM 14
22 3.2 CR-RC LNS energy deposit rate (LNS) Ge 2 khz KEK 4 energy deposit rate 60 Co γ Ge energy deposit K π + LNS (MIP) Ge (2.2 Gbyte) 3.4 LNS MeV 2 STB 1.2 GeV γ GeV γ 3 GeV γ RTAGX γ MeV 1 % 3 khz 3.5 Ge energy deposit rate Ge 60 Co Co 60 Co 1) β 60 Co γ 60 Co 20 kbq 100 Hz 2) γ 1) β ( 60 Co 60 Ni ) γ ( 60 Ni 60 Ni) 2) β 15
23 3.4 LNS MeV 1.2 GeV 2 γ 3 GeV γ RTAGX LNS Ge Ge Ge Ge 60 Co β β γ 16
24 3.6 Ge 2 1 ORTEC µsec 1 ORTEC 579 Timing Filter Amp. (TFA) Flash ADC (SIS MHz) ADC (AD413A) ADC Flash ADC Flash ADC TFA Constant Fraction Discriminator (CFD) CFD (Constant Fraction) CFD (gamma ) 1 1 Time-to-Amplitude Converter (TAC) TAC AD413A Co discriminator (beta ) beta ADC 3.6 LNS 2 µsec Flash ADC ADC TAC 60 Co γ Ge CFD Co 3 70 µsec 60 Co γ 17
25 gamma beta ( 3) ) Ge 60 Co γ 671 Flash ADC TAC γ Hz 70 µsec 2 khz (1 s 140 msec ) 100 Hz (10 msec ) β, γ Co 70 µsec 2 khz 100 Hz 14 Hz (3.1) Flash ADC 1 DAQ dead time 4) DAQ dead time 3) Ge 4) 1 SIS3302 PC DAQ 30 Hz dead time 18
26 3.2.2 Ge energy deposit CRM (Count Rate Meter) 5) 2 3 khz Ge Ge CRM Co γ CRM 10 khz Co 20 kbq 3.5 MIP ( ) Ge MIP 1 energy deposit 50 MeV 6) Ge threshold 175 MeV 50 MeV energy deposit 3 khz energy deposit rate 0.2 TeV/s KEK 4 Counting rate [khz] CRM Beam Monitor Preamp Reset Time [hour] 3.7 CRM 671 discriminator CRM Ge Ge Ge Ge 5) 671 discriminator 6) 1.37 MeV/g cm 2 ( ) g/cm 3 (Ge ) 7 cm( ) 19
27 ADC (AD413A) 60 Co 1.33 MeV kev 2 µsec 2.7 kev 7) 0-10 µsec TAC 200 µsec 671 AD413A 200 µsec 1 Flash ADC 3.5 ( ) [µsec] FWHM [kev] [%] ) 100 % Ge 20
28 Flash ADC Flash ADC 3.8 (13 bit) 8) µsec γ Flash ADC 5 V 671 Voltage [0.61 mv/ch] Beam pulse Reset pulse Gamma-ray pulse 4000 Beseline Time [20 ns/ch] 3.8 Flash ADC 20 nsec 160 µsec 671 γ 3.9 8) 3 bit 2 3 = 8 21
29 3.9 χ 2 22
30 flash ADC flash ADC % 1 Event Counts Overflow Counts (8192 ) Flash ADC
31 Flash ADC TAC 671 flash ADC TAC 9) Voltage [ mv / ch ] normal waveform Diff. Coefficient [ mv / ch ] Time [ 20 ns/ ch] differential waveform Time [ 20 ns/ ch] ) 4 ch 4 ch ch(20 nsec) 0.61 mv 24
32 kev/ch (2 MeV/13 bit) 80 kev (300 ch), 140 µsec µsec 13 bit Ge Ge 671 flash ADC Y 25
33 RMS 2.0 ch (0.5 kev) 10) (40 µsec) reduced χ 2 1 Voltage [ mv / ch ] Time [ 20 ns/ ch] Residual Error [ mv / ch ] Time [ 20 ns/ ch] ) 16 bit 11 bit 26
34 reduced χ reduced χ 2 χ 2 1 ( ) χ 2 χ χ 2 χ (20 µsec) 3.13 µsec 1000 χ Reduced χ 2 χ 2 χ 2 χ
35 Counts 1 Cut Region [points] Reduced Chi-square 3.15 reduced χ χ 2 χ (20 µsec) 28
36 ) χ PHADC 60 Co 1.33 MeV ) 29
37 30 µsec 1 30 µsec µsec dead time 30 µsec 973U UHA ( 0.5 µsec + Gated Integrator) 20 µsec dead time dead time 671 (2 µsec) 973U UHA (0.5 µsec) ( ) 671 dead time 973U UHA energy deposit rate dead time 3.6 ( ) [µsec] FWHM [kev] [%] (20 µsec ) 1 12) 2. Reduced χ 2 (χ 2 < 2) ) ( ) 30
38 Ge p [sec] f [Hz] f [Hz] 1 sec f f s flash ADC i 1 n n = f i f s (3.2) b n f s p i b = i nf s p (3.3) f s p b = n n n max i 1000 f s p (3.4) f n p f s i 1000 P (f) P (f) = k=n max +1 n k k! e n (3.5) 1000 P (f) P (f) = n max k=0 n k k! e n = 1 P (f) (3.6) 3.17 f P (f) 13 µsec 13) 50 MHz khz 13) 2 µsec
39 Probability Counting Rate [khz] 3.17 (Counting Rate) MHz flash ADC 13 µsec 8000 Ge 70 khz energy deposit rate 1.1 KEK Ge energy deposit rate 70 khz energy deposit rate 0.7 TeV/s threshold 175 MeV 0.7 Tev/s 175 MeV = 4 khz (3.7) 973U UHA( dead time 20 µsec) dead time 20 µsec 4 khz = 0.08 [ 8 % ] (3.8) 671 ( dead time 200 µsec) 200 µsec 4 khz = 0.8 [ 80 % ] (3.9) 671 ( dead time 30 µsec) 2 30 µsec 4 khz 2 = 0.24 [ 24 % ] (3.10) 32
40 4 1 dead time (973U UHA) (671 ) dead time µsec 671 dead time 973U UHA ) J-PARC energy deposit rate 14) 2.9 kev/2.4 kev ( 6 µsec 60 Co 1.33 MeV 33
41 CR-RC flash ADC U UHA 15) U UHA UHA 671 UHA flash ADC 370 kbq 60 Co flash ADC U UHA 2 flash ADC Flash ADC 2 ( U ) U UHA 973U ) 34
42 3.3.2 Flash ADC 3.19 Flash ADC 671 (671 ) 973U UHA (973U ) µsec UHA Gated Integrator 3.0 µsec 973U UHA bit Ge 671 UHA UHA 671 UHA gated integration Voltage [ mv / ch ] Voltage [ mv / ch ] Voltage [ mv / ch ] preamp Time [ 20 ns/ ch] 973U UHA Time [ 20 ns/ ch] 671 amp Voltage [ mv / ch ] Voltage [ mv / ch ] Voltage [ mv / ch ] Time [ 20 ns/ ch] Time [ 20 ns/ ch] Time [ 20 ns/ ch] Time [ 20 ns/ ch] U 973U UHA µsec 2 µsec 35
43 671 ( ) ( ) ( ) ( ) χ 2 36
44 ( ) ( ) CRM 60 Co 1.33 MeV µsec Voltage [ mv / ch ] Time [ 20 ns/ ch] Voltage [ mv / ch ] Time [ 20 ns/ ch] Height Time [ 20 ns/ ch] µsec
45 (1 kev ) 1 30 µsec (1440 ) 3.1 ( 2 µsec) 1.33 MeV γ 1 kev ( ) 1.33 MeV γ 1 kev ( ) ( ) ( ) sumb suma = n data[i] i n data[i + g] (3.11) i n g (gap) 3.22 (suma, sumb) threshold UHA threshold 16) threshold (1 st ) 8 2 threshold (2 nd ) 16) threshold 38
46 Voltage [ mv / ch ] sumb gap suma Time [ 20 ns/ ch] Voltage [ mv / ch ] st 1 threshold nd 2 threshold sumb-suma Time [ 20 ns/ ch] 3.22 (suma, sumb) gap 2 threshold( 8 ) 2 thresould 8 threshold 2 threshold CRM g = 15, n = 20 (FWHM) 60 Co 1.33 MeV 40 kev (FWHM) flash ADC CRM 17) (FWHM) 120 nsec 18) 6 17) Flash ADC 18) Ge 10 nsec 39
47 3.23 ADC-ADC ADC-TDC FWHM 120 nsec ( ) Co 1.33 MeV Gap Size ( g) 15 (300 ns) g (n) g = 15, n = ns 300 ns 19) 1 µsec 19) 2 40
48 FWHM [kev] 2 10 Gap Size [ch] Smoothing Size [ch] g = 15, n = threshold 50 kev flash ADC 40 kev 50 kev 50 kev 50 kev 50 kev χ 2 41
49 Voltage [ mv / ch ] P ulse Height [ mv / ch ] T Ltotal -T T T Ltemplate Time[ 20 ns/ ch] P ulse Position [ 20 ns/ ch] ( ) 20) 3.25 L total n T n N N 1 L total = L template + (T i+1 T i ) (3.12) L template i=n 20) 42
50 ( ) CRM 500 Hz (2 msec ) µsec(8192 ) ( ) (3.12) N=1 ( µsec) 3.26 reduced χ 2 ( ) χ MeV reduced χ 2 χ 2 < 2 99% 1 1% 50 kev Reduced Chi-square Energy [MeV] 3.26 reduced χ 2 ( ) 1 χ
51 Counts 1 Cut Region [MeV] Reduced Chi-square 3.27 reduced χ 2 ( ) MeV χ Co 2 40 K 208 Tl flash ADC ) χ 2 60 Co Tl 22) 60 Co 1.33 MeV (FWHM) 2.8 ± 0.1 kev 3.1 ( 2 µsec) 21) 22) 1 60 kev 44
52 ( ) 1 Flash ADC Voltage [ mv / ch ] Range limit of Flash ADC Residual Error [ mv / ch ] Time [ 20 ns/ ch] Time [ 20 ns/ ch] Flash ADC 20 1 reduced χ
53 Ge 1.4 khz ( ) ( ) 23) µsec 2 µsec reduced χ 2 1 Voltage [ mv / ch ] Voltage [ mv / ch ] Time [ 20 ns/ ch] Time [ 20 ns/ ch] Residual Error [ mv / ch ] Time [ 20 ns/ ch] Residual Error [ mv / ch ] Time [ 20 ns/ ch] ) 46
54 χ 2 1 ( ) χ 2 1 χ 2 χ 2 χ 2 χ ) χ 2 χ reduced χ 2 χ MeV reduced χ Reduced Chi-square Energy [MeV] 3.31 reduced χ 2 ( ) χ 2 24) 1 χ 2 47
55 Counts 1 Cut Region [MeV] Reduced Chi-square 3.32 reduced χ 2 ( ) MeV χ 2 χ 2 < reduced χ 2 12 µsec µsec 3.1 ( 2 µsec ) χ χ 2 < 3 16 % MeV 25) 25) 48
56 Reduced Chi-square Interval of Pile-up Pulses [µsec] 3.33 reduced χ 2 ( ) χ 2 χ 2 ( ) 2 ( ) 26) 3.34 reduced χ 2 χ MeV reduced χ 2 χ reduced χ χ 2 26) 49
57 Reduced Chi-square Energy [MeV] 3.34 reduced χ 2 ( ) Counts 1 Cut Region [MeV] Reduced Chi-square 3.35 reduced χ 2 ( ) MeV χ 2 50
58 Reduced Chi-square Interval of Pile-up Pulses [µsec] 3.36 reduced χ 2 ( ) 3.32 χ χ 2 < 2 18 % χ A 51
59 PHADC ( ) (FIT ) 973U UHA PHADC 40 K 1.46 MeV PHADC UHA 60 Co FIT 1.8 MeV Flash ADC 27) PHADC ADC ADC 28) Counts / 5 kev Readout Method 671 PHADC 671 Pulse Fitting 973U UHA (3µsec) Energy [MeV] PHADC 973U UHA PHADC 27) UHA ) 52
60 Co 1.33 MeV 1 973U UHA PHADC 973U UHA (Gated Integrator) 60 Co 671 PHADC FIT MeV 973U gated integration time 3 µsec µsec FWHM [kev] 973U UHA (PHADC ) (PHADC ) ± (FIT ) ± f Hz T sec 2 P P = 1 exp ( ft ) (3.13) 1.4 khz 12 µsec (671 ) % 12 µsec 2 100% 973U UHA 3 µsec U UHA ( 1 1 exp ( 1.4 [khz] 3 [µsec]) 1 exp ( 1.4 [khz] 12 [µsec]) ) = 150 (3.14) 150 FIT 1 µsec 1 µsec
61 ( 1 1 exp ( 1.4 [khz] 1 [µsec]) 1 exp ( 1.4 [khz] 12 [µsec]) ) = 184 (3.15) 973U UHA FIT 1.2 FIT 1 µsec FIT 973U UHA PHADC µsec 5µsec 1 2 ADC Co 1.33 MeV 29) ± 0.05 kev 60 Co 1.33 MeV 2.7 kev 3.2 kev 29) 1 54
62 Counts / 1 kev 3 10 Pulse 2 10 Front Rear No Pileup Energy [MeV] 3.39 ( ) (PHADC ) 973U UHA (PHADC ) ) Co 1.33 MeV 3.7 FIT 30) FIT χ 2 55
63 MeV 973U gated integration time 3 µsec µsec FWHM [kev] 973U UHA (PHADC ) (PHADC ) ± (FIT ) ± 0.02 Counts / 5 kev Readout Method 671 PHADC 671 Pulse Fitting 973U UHA (3µsec) Energy [MeV] PHADC 973U UHA PHADC Co 1.33 MeV ± 0.05 kev 60 Co 1.33 MeV 3.2 kev 3.4 kev χ 2 56
64 χ 2 FIT 3.5 kev Counts / 1 kev 3 10 Pulse 2 10 Front Rear No Pileup Energy [MeV] 3.41 ( ) 57
65 1 t 0 = 0 t P (t) t t + dt f f dt t + dt P (t + dt) t P (t) P (t + dt) = P (t)(1 f dt) (3.16) dp (t) dt = P (t) f P (t) = C exp ( ft) (C ) (3.17) P (t 0 ) = 1 C = 1 T P (f) P (f) = 1 exp ( ft ) (3.18) 3.42 T µsec P (f) 1 µsec 300 khz dead time 2 Probability Pulse Pair Resolution [µ sec] Counting Rate [khz]
66 µsec 2 µsec kev 973U UHA 3 1 µsec 59
67 4 J-PARC Ge flash ADC 100 MHz ADC 16 bit flash ADC ORTEC (LNS) 4 energy deposit rate Ge 1 dead time Ultra Highrate Amp 30 µsec (2 µsec) 2.9 kev UHA 2. FIT 2. Ge 60 Co γ ( ) flash ADC ( FIT ) 1 µsec 3 60
68 1 µsec J-PARC 1. FIT 2. FIT Co γ (1 MeV ) (50 MeV ) 4. 1 µsec 5. ( ) Ge 61
69 [1] Y. Yamamoto et al. Prog. Theor. Phys. Suppl, Vol. 117, p. 361, [2] H. Tamura et al. Nucl. Phys, Vol. A754, p. 58c, [3] H. Tamura et al. Gamma-ray spectroscopy of light hypernuclei. J-PARC proposal E13, [4] K. Shirotori. Hypernuclear gamma-ray spectroscopy at J-PARC K1.8 beam line. Master s thesis, Tohoku University, [5] M. Mimori. γ. Master s thesis, Tohoku University, [6] J. Sasao. Master s thesis, Tohoku University, [7] K. Tanida. PhD thesis, Univ. of Tokyo, [8] 62
70 A CR-RC (CR ) 1) A.1 ADC ( ) A.2 ADC flash ADC A.1 A.2 1) R 0 V(t) dt = 0 63
71 B B µsec 50 MHz 25 MHz khz µsec 1 MHz MHz Abs. Magnitude Frequency [MHz] B MHz 8000 (160 µsec) 1 MHz
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