12 14 ( ) 11:10 12:40 10 L TL-1 Maxwell 1 13:50 14:50 10 L OL-2 7 I A 16:00 18:00 10 S10A I A-3 CsI:Na 2 Na 11 I A-4 PbCl 2 Br Br 15 A A I A-5 19 A A,B A,B C A B C I A-6 PVA 23 A ( ) A,B A,B A,B A,B B,C A B C i
I A-7 / 27 A B A B I A-8 31 A A I A-9 35 A A ( ) I A-10 39 I A-11 F8BT 43 I A-12 GaAs 47 I A-13 GaAs InGaAsN/GaAs II 51 A B A B I A-14 ZnSe/BeTe II 55 A A B C A B C I A-15 ZnSe/BeTe II 59 A B A B ii
I A-16 63 A B A A C A B C I A-17 BiFeO 3 67 D. S. Rana A A A I A-18 71 A A A A I B 16:00 18:00 10 S10B I B-19 1s 75 A B A B I B-20 CuCl 79 I B-21 DBR CuCl 83 A B,C A B C CREST JST I B-22 87 A A,B A,B A,B A B CREST JST I B-23 PbI 2 91 A,B A B CREST JST I B-24 CdTe/ZnTe 95 A B A B iii
I B-25 / 99 A A A A I B-26 ZnS CdS 103 I B-27 PL 107 A A I B-28 111 A A,B,C B,D A,B A B CREST C D I B-29 3 115 A A,B C,D D E A,B A B C D E I B-30 SW 119 I B-31 PIC J Ag Ag Ag DBR 123 A A A A,B A,B A B I B-32 127 A,B C A,B A,B A,B A B CREST JST C PRESTO JST I B-33 131 I B-34 / 135 A A A iv
I B-35 139 A A,B A B CREST JST I B-36 Si(001) MgO 143 I B-37 MgO 147 Nguyen Tuan Anh v
12 15 ( ) II A 10:40 12:20 10 S10A II A-38 170THz THz 151 A A A A,B A A B JST II A-39 II A-40 LT GaAs 155 A A B A,C A D B A B C JST D GaAs/AlAs LO 159 A B B A B II A-41 (EDO TTF) 2 PF 6 163 A A A II A-42 167. A A A II A-43 171 A A,B,C A,B A B CREST C II A-44 175 A A A A B A B II A-45 MEH PPV 179 A A vi
II A-46 : 183 A,C B,C A B C CREST JST II A-47 GaAs 187 A A,B A A B,C A B CREST JST C II A-48 GaAs 191 A,B A,B A,B,C A,B A,B A,B,D A B CREST JST C D II A-49 CuCl 195 A A,B A,B A,B A B CREST JST II A-50 SmH 2.2x2.6 199 A A A II A-51 CuInS 2 203 A B A B II A-52 TlInS 2 207 A B Nazim Mamedov A B II B 10:40 12:20 10 S10B II B-53 Nb 4+ 211 II B-54 TiO 2 215 A A A,B A B vii
II B-55 SiO 2 TiO 2 219 II B-56 Co TiO 2 (110) 223 A B C C C A B C II B-57 Si(111) 227 II B-58 231 II B-59 PDA DFPC 235 II B-60 [Fe 4 (CN) 4 (bpy) 4 (tpa) 2 ](PF 6 ) 4 239 A A II B-61 TTTA 2 243 II B-62 PVC ESR 247 II B-63 RbMnFe 251 A A A viii
II B-64 255 A A A II B-65 LiNbO 3 1550nm 259 A B A PREST JST B II B-66 Doping induced ferroelectric phase transition and ultraviolet illumination effect in a quantum paraelectric material 263 Y. Koyama, T. Moriyasu A, H. Okamura, Y. Yamada B, K.Tanaka B, T. Kohmoto Grad. Sch. Sci., Kobe Univ., A Grad. Sch. Sci. Tech., Kobe Univ., B Grad. Sch. Sci., Kyoto Univ. II B-67 Li KTaO 3 267 II B-68 SrTiO 3 271 III A 15:00 16:40 10 S10A III A-69 CuI 275 A B B CASI VBL A B III A-70 ZnO 279 A B C A,B A AFPC B C III A-71 Si Er 283 A A A III A-72 CdSe/ZnS/TOPO 287 A A A A,B A,B A B ix
III A-73 CdSe/CdTe core/shell type II 291 A A A A A,B A,B A B III A-74 N 295 A A,B A CREST B III A-75 299 A A III A-76 CuCl 303 III A-77 307 A A,B,C A,B A B CREST C III A-78 311 A A III A-79 315 A B A A,B C C A,B A B C NTT III A-80 g 319 A B B A,B C C A,B A B C NTT III A-81 323 A A A A ( )KRI x
III A-82 Eu ZnO 327 A A III A-83 Mn 2+ d d 331 A A A A,B C D A B NEC C D III A-84 YPO 4 :Zr 4+ Mn 2+ ScPO 4 :Zr 4+ Mn 2+ 335 A A III B 15:00 16:40 10 S10B III B-85 GaAs/AlAs 339 A A III B-86 GaAs/AlAs 343 III B-87 DBR 347 A B,C A,C A B C CREST JST III B-88 Theoretical analysis of four wave mixing response of cavity bipolaritons 351 Hisaki Oka A and Hajime Ishihara A,B A Department of Physics and Electronics, Osaka Prefecture Univ. B CREST JST III B-89 355 A A A III B-90 359 A A,B A,B A,B C C A B CREST JST C xi
III B-91 363 A,C B,C A B C CREST JST III B-92 367 A A III B-93 AlGaN 371 A B B A B III B-94 AlGaN SNOM 375 A A A A ( ) III B-95 379 A A A A,B A,B A,B A B CREST JST III B-96 CdTe/CdMnTe 383 A Henri Mariette B A B CNRS III B-97 387 A A,B,C D A,B A B CREST C D III B-98 391 Tomio Petrosky A A III B-99 395 A A,B A B CREST xii