Maintenance-Free Sensor Made with Energy Harvesting Technology 田 中 努 鈴 木 貴 志 栗 原 和 明 あらまし M2MMachine to Machine 1 CO 2 M2M 2 Abstract Energy Harvesting Technology obtains electric power from the ambient environment, from sources such as sunshine, machine vibration and thermal sources. It extends the possible range of application of Machine to Machine (M2M) wireless sensor networks by offering maintenance-free operations, saving energy, and requiring less wiring. Moreover, Energy Harvesting Technology that achieves battery-less operations and reduces CO 2 is useful as technology for the next-generation Smart City and the Sustainable Society. This paper describes the research and development situation in Fujitsu Laboratories with regards to oxide thermoelectric material technology, all-solid secondary battery technology, and environmental power generation tester technology that are used in Energy Harvesting Technology for maintenance-free M2M wireless sensor modules. FUJITSU. 64, 5, p. 557-563 09, 2013 557
ま え が き W mw M2MMachine to Machine M2M 図 -1 M2M 図 -2 M2M /ンのエネ セス/るエネ エネルギー ハーベスティング センサー /ルのエネ / 明 エネ /の のるエネ PM2.5/ ルスの を ルスー -1 558 FUJITSU. 64, 5 09, 2013
2 熱 電 変 換 材 料 ZT ZTS 2 T/ センサー ZT S T エネルギーハーベスティング -2 ZT1 BiTePbTe SrTiO 3 STO STO ZT0.1 STO 1 2 nm STO ZT STO Nb X SrLaTi NbLa Nb 図 -3STO30 nm SrLaTiNbO 3 TEM 1/2 ZT0.23 1 XPS X 2 3 FUJITSU. 64, 5 09, 2013 559
ナス SrLaTiNbO 3 LiAl 400 µm 400 µm SrTiO 3 10 nm LiCoO 2 200 µm ス -42 SrLaTiZrO 3 SrLaTiO 3 STO 2 9 全 固 体 2 次 電 池 2 nm -3SrTiO 3 SrLaTiNb O 3 TEM 2 PCLi 2 2 Li Li 2 LiPBS 2 図 -4 LiCoO 2 LiAl 1 2 Li 10 4 Scm 1 Li 3 PS 4 5P 3B 12 Li 33/4x P 13/4x B x S 4 Bx0.101.00 図 -5Bx x0.35 x0.35 2.210 4 Scm 1 560 FUJITSU. 64, 5 09, 2013
10 3 2.210 4 S cm 1 5 ンS cm 1 10 4 10 5 10 6 10 7 LiPON のン A B C LiPS ベース 10 8 0.0 0.2 0.4 0.6 0.8 BLi 33/4x P 13/4x B x S 4-5LiPBS 1.0 V 4 3 2 1 ナス LiAl ス LiPBS LiCoO 2 4 4 0 20 40 60 80 mah g 1-62 SPring-8X BPnma LiS 6 Li LiLiS 6 4 LiPBSB 2 図 -6 400 m1 t 4 2 2 2 環 境 発 電 テスター 22 FUJITSU. 64, 5 09, 2013 561
2-7a -1 IEEE 802.15.42.4 GHz 1 km 50 20 10 s PC -7b V 0.4 0.3 0.2 0.1 30s 2s/ 5s/ 10s/ 1min/ 0 10 cm Start Stop Clear IEEE 802.15.42.4GHz Line Dot a b -7-1 5 V 2 A/D 1ch I2C 1ch 562 FUJITSU. 64, 5 09, 2013
む す び M2M / WmW M2M 参 考 文 献 1 J. D. Baniecki et al.electronic transport behavior of off-stoichiometric La and Nb doped SrxTiyO 3 - epitaxial thin films and donor doped single-crystalline SrTiO 3 Appl. Phys. LettVol.99 Issue23p.23211-123211-32011 2R. Schafranek et al.band offsets at the epitaxial SrTiO 3 /SrZrO 3 0 0 1heterojunctionJ. Phys. D Vol.45No.50553032012 3J. D. Baniecki et al.density functional theory and experimental study of the electronic structure and transport properties of La, V, Nb, and Ta doped SrTiO 3 J. Appl. PhysVol.113Issue1p.013701-1 013701-112013 4K. Homma et al.enlarged Lithium-Ions Migration Pathway by Substitution of B for P in LiPSECS Transactions Vol.50No.26p.307-314 2012 著 者 紹 介 田 中 努 (たなか つとむ) 栗 原 和 明 (くりはら かずあき) 鈴 木 貴 志 (すずき たかし) FUJITSU. 64, 5 09, 2013 563