1 1-1 p-i-n 1-1 (CIS/CIGS CdTe ) (GaAs) (,,) (, ) (,,) Si Si Si (CIS/CIGS CdTe ) (GaAs) (,,) (, ) (,,) Si Si Si Si
1-2 HITHeterojunction with Intrinsic Thin layer 30 HIT 22.3NIKKEI MICRODEVICES, May,82-86(2008) 1mm 1/3 1/5 1-2 Si HIT SiSi Si Si Si Si+Si(,) CIGSCIS -(CdTe,CdS) -(GaAs) 2
CVD 8 NIKKEI MICRODEVICES, June, 84-88 (2008) GaAs CISCuInSe2 CIGSCuInGaSe2 CdTeCdS 33 2007 40 CISCIGS CdTe CISCIGS CISCIGS 12006 PVNews(April 2007)CdTe CdTe 2006 3 PVNews(April 2007) p n p-n p-n nm 1991 p n nm i p-i-n 2007 209.9MW 84.1176.6MW15.332.2MW 11MW2002 2007 5 3
10 75 1/7 http://www.jpea.gr.jp/index.html2009 1 13 15 2006 3 24 2007 1 2,000 2012 3.9 4 7,000 2008 8 8 2008 7 29 2020 10 2030 40 2020 320 8 2 2030 1,000 6 4 2 2008 8 8 2008 11 11 RPS 4
EPC Derwent World Patents Index WPINDEX(STN) WPI EPC PATOLIS WPI 2000 2006 8,315 6,539 2000 2006 2005 PCT 1 6 2000 11 29 7 2001 10 3 5
1 HIT CIS CIS 3 5 3 2-1 6
2-1 2-2 68.4 3 2 2005 PCT 30 2-3 2000 2006 2-2 7
2-3 2-4 2-8 92.2 3.8 2000 2002 2003 2004 700 46.5 31.3 51.7 31.1 2004 2005 253 43.9 18.3 2000 2004 41.5 28.5 2-4 8
2-5 2-6 2-7 9
2-8 2-9 574 134 426 167 233 109 20 193 193 75 3 54 31 95 53 11 9 10
11 2-9
2-10 36.5 34.7% 70 2000 596 2002 253 2003 2004 300 2004 414 2004 CIS 57.2 2-10 12
2-11 75.2 2004 2004 2005 2-11 2-12 81.4 8.6 2-12 13
2-13 56.5 29.1 2-13 2-14 52.6 23.9 2-14 14
2-15 45.7 50 29.0 19.2 2-15 15
2-16 39.4 29.5 70 2-16 2-17 25 2-17 16
2-18 63.1 5 14.5 5 40.7 31.7 56.2 2-18 17
2-19 68.0 56.6 22.0 18.4 17.4 15.6 2-19 18
2-20 73.0 13.8 CVD 33.6 22.8 2-20 2-21 69.5 40.2 33.9 53.9 55.4 19
2-21 2-22 2000 2002 40 2-22 20
2-23 2-23 a) b) 21
CVD CIS 4 4 22
2-24 2-11 2000 2-24 2-25 2000 2005 2006 2-25 23
2-26 20 2004 54 2-26 2-27 2001 2004 2-27 24
2-28 691 15 E.I. 73 2-28 2-29 3 10 10 6 4 4 5 SDI 1 2 25
2-29 EPC 2-30 PCT 30 2,3 322 8 104 136 27 28 2-30 2-31 2000 2006 2004 31 2000 35 2003 26
2-31 2-32 2000 54 2001 2004 10 2-32 27
4 30 2000 2006 2000 2-33 2007 28
2-33 (a) 29
2-33 (b) 30
2-33 (c) 31
2-33 (d) 32
2000 2007 JSTPlus 25 3-1 3,638 2,374 65.3 3-1 Solar Energy Materials and Solar Cells Thin Solid Films Journal of Applied Physics Progress in Photovoltaics US Department of Energy Report Japanese Journal of Applied Physics Part 1 Journal of Non-Crystalline Solids Semiconductor Science and Technology Solar Energy Journal of Crystal Growth Renewable Energy IEEE Transactions on Electron Devices Journal of Physical Chemistry B Applied Physics Letters Physical Review B: Condensed Mater and Materials Physics Journal of Vacuum Science and Technology A Physica Status Solidi. A: Applied Research Journal of the American Chemical Society Journal of Polymer Science Part A Journal of Physical Chemistry : C Energy Policy IEEE Transactions on Industrial Electronics Science IEEE Transactions on Power Electronics IEEE Transactions on Energy Conversion 33
3-2 2001 2006 403 39.8 20.2 18.2 16.5 103 100 3-2 3-3 5 2006 2.3 2001 2006 2004 3-3 34
3-4 68.4 2-2 16.5 15.3 39.8 14 1.3 3-4 a) b) 3-5 1,033 708 21.9 687 21.2 2000 2001 20 2006 140 3-5 35
3-6 3-6 3-7 70 2-10 43 12.3 31.9 3-7 a) b) 36
3-8 65.4 39.4 2003 2005 200 2006 500 3-5 2006 3-9 3-8 3-9 a) b) 37
3-10 29.6 29.4 25.4 2000 2001 200 2004 2006 2006 3-5 2004 2005 3-11 3-10 3-11 a) b) 38
3-12 1 3 28 31 29 28 3-12 39
NEDO http://www.nedo.go.jp/index.html 1990 / RPS FITFeed-in Tariff 2000 20 10 net metering RPSRenewables Portfolio Standard 2003 4 RPS 1994 2005 40
1) 5-1 20062007513,733MW2004 2007920MW1999 200725200451 20071.52007 2.2(PVNews (April 2008))2007912MW77702MW 2008828 5-1 PV News (April 2008) 5-2 2006 85HIT 93 4 97CdTe CIS/CIGS 32003 1.5 3/4 (PV News,10(April 2007)) 1) AM1.5 1,000W/m2 25 41
CdTe 2006 7 CIS/CIGS 2006 0.2 HIT 98 54 15CdTe 30 CIS/CIGS 1.2 6 98 5-2 2006 a) b) c) d) e) PVNews (April 2007) 2008 8 8 08060 2007 9 2012 27 42
2007 578 2012 10 5,595 CdTe CIS/CIGS CdTe CdTe Cd 2007 630 2012 4 2,660 CIS/CIGS 2007 10 5-3 2007 Q- 10.4 9.7 2 8.8 3 5.55.3 4.44.0(Baoding Yingli3.8% () CA3.5 10 3 5-3 2007 PVNews,8-9(March 2008) 18 20 7 9 CA 5-4 2002 5 2002 2007 2002 2006 5 3 2006 2007 Q- 43
Q- 2004 2007 5 2007 CdTe 2007 5-4 PVNews March 2008 44
2000 2006 7,970 2-2 1,262 2-3 68.4 3 2 2-2 6-1 2005 2006 6-1 36.5 34.7 12.3 10.5 5.9 70 2-10 6-2 6-3 39.4 2-16 29.5 70 2-16 6-4 30 50 45
6-2 6-3 6-4 25 2-17 46
4 2-24 2-27 2000 2005 2006 2001 2004 691 1 2 3 14 15 E.I. 2-28 2-29 3 10 10 4 4 5 SDI 1 2 EPC 2-30 2-31 2-32 322 8 104 136 27 28 2000 2006 2004 31 2004 2-22000 35 2003 2004 2-2 2000 54 2001 2004 10 2-33 47
2000 2007 2,374 7,970 3 1 3-3 39.8 20.2 18.2 16.5 3-2 15.3 39.8 31.9 21.9 21.2 15.7 9.4 3-5 39.4 65.4 29.5 10.7 3-9 2530 19.8 2.9 3-11 246 1 114 2 3-12 6-5 80 87 6-5 1 1 2000 2007 4 48
6-6 6-6 6-7 382 2 0.5 479 13 2.7 926 14 1.5 103 3 2.9 6-7 4 49
1 1974 Si Si - 1980 NEDO 1993 Sia-SiCdTeCISGaAs 2001 1994 2005 2003 4 RPS 2008 7 2020 10 2030 40 2005 2006 25 2000 1998 2004 2007 1 2,000 2007 3,733MW 920MW 1,063MW 266MW 1,484MW 1999 2006 1 2007 3 5-1 772007 2006 93.3 3.9CdTe 2.7CIS 0.2 5-2CdTe 3 50
21 0.1 2008 6 9 7 29 2020 10 2030 40 2000 2006 2000 2007 104 136 322 6-8 4,037 6-9 8 2728 51
6-8 6-9 52
386 431 861 6-10 286 126 156 72 102 120 29 6-10 6-10 53
6-11 40 50 250 6-11 90 1716 3 6-12 6-13 54
6-12 6-13 55
6-14 6-14 56
6-15 6-15 27 10.3 6-14 95 24.6 6-15 CIS CIGS CdTe 6-16 90 6-17 2 57
6-16 58
6-17 2006 a) b) c) d) e) PVNews (April 2007) 59
60