Keywords: hot carrier, submicron device, MOSFET, reliability, trap, interface states, lucky electron, electron temperature Hot Carrier Effects in MOS

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1 Keywords: hot carrier, submicron device, MOSFET, reliability, trap, interface states, lucky electron, electron temperature Hot Carrier Effects in MOS Devices. Mitsu masa KOYANAGI. Research Center for Inte grated Systems, Hiroshima University. Shitami, Saijo-cho, Higashi-Hiroshima 724.

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14 2) T. H. Ning, C. M. Osburn and H. N. Yu: J. Appl. Phys. 48 (1977) ) T. H. Ning and H. N. Yu: J. Appl. Phys. 45 (1974) ) C. Hu: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1979 (IEEE Publish ing Services, New York, 1979) p ) S. Tam, P.-K. Ko and C. Hu: IEEE Trans. Electron Devices ED-31 (1984) ) E. Takeda, Y. Nakagome, H. Kume and S. Asai: IEE Proc. 130 (1983) ) K. R. Hofmann, C. Werner, W. Weber and G. Dorda: IEEE Trans. Electron Devices ED-32 (1985) ) R. B. Fair and R. C. Sun: IEEE Trans. Elec tron Devices ED-28 (1981) 83. 9) E. Takeda, A. Simizu and T. Hagiwara: IEEE Electron Device Lett. EDL-4 (1983) ) R. Bellens, P. Heremans, G. Groeseneken and H. E. Maes: IEEE Electron Device Lett. EDL 9 (1988) ) S. K. Lai: Appl. Phys. Lett. 39 (1981) ) A. Schwerin, W. Hansch and W. Weber: IEEE Trans. Electron Devices ED-34 (1987) ) T. Tsuchiya, T. Kobayashi and S. Nakajima: IEEE Trans. Electron Devices ED-34 (1987) ) P. E. Cottrell, R. R. Troutman and T. H. Ning: IEEE Trans. Electron Devices ED-26 (1979) ) Y. Nissan-Cohen, G. A. Franz and R. F. Kwasnick: IEEE Electron Device Lett. EDL -7 (1986) ) E. Takeda, H. Kume, T. Toyabe and S. Asai: IEEE Trans. Electron Devices ED-29 (1982) ) H. Katto, K. Okuyama, S. Meguro and N. Suzuki: Proc Symp. VLSI Technology, (IEEE Publishing Services, New York, 1987) p ) J. Winnerl, A. Lill, D. Schmitt-Landsiedel, M. 18) W. Weber: IEEE Trans. Electron Devices ED - 35 (1988) ) C. Hu, S. Tam, F. -C. Hsu, P. -K. Ko, T. -Y. Orlowski and F. Neppl: Tech. Dig. Int. Elec Chan and K. W. Terill: IEEE Trans. Electron Devices ED-32 (1985) ) T. Y. Chan, C. L. Chiang and H. Gaw: Tech. Dig. Int. Electron Devices Meet., San Fran cisco, 1988 (IEEE Publishing Services, New York, 1988) p ) K. K. Ng and G. W. Taylor: IEEE Trans. Electron Devices ED-30 (1983) ) E. Takeda, Y. Nakagome, H. Kume, N. Suzuki and S. Asai: IEEE Trans. Electron Devices ED-30 (1983) ) M. Koyanagi, T. Y. Huang, A. G. Lewis and J. Y. Chen: Proc Taiwan Symp. VLSI Technology, Taipei, 1989 (IEEE Service Center, New Jersey, 1989) p ) M. Koyanagi, A. G. Lewis, R. A. Martin, T. Y. Huang and J. Y. Chen: Ext. Abstr. 18th (1986 Int.) Conf. Solid State Devices and Materials, 25) M. Koyanagi, A. G. Lewis, R. A. Martin, T. Y. Huang and J. Y. Chen: IEEE Trans. Electron Devices ED-34 (1987) ) M. Kinugawa, K. Yamada, Y. Katoh, E. Ni shimura, M. Kakumu and J. Matsunaga: Proc Symp. VLSI Technology, San Diego, 1988 (IEEE Service Center, New Jersey, 1988) p ) F. Matsuoka, H. Hayashida, K. Hama, Y. To yoshima, H. Iwai and K. Maeguchi: Tech. Dig. Int. Electron Devices Meet., San Fran cisco, 1988 (IEEE Publishing Services, New York, 1988) p ) R. B. Fair and R. C. Sun : IEEE Trans. Elec tron Devices ED-28 (1981) ) W. Weber, C. Werner and G. Dorda: IEEE Electron Device Lett. EDL-5 (1984) ) K. -L. Chen, S. A. Saller, I. A. Groves and D. B. Scott: IEEE Trans. Electron Devices ED -32 (1985) ) T. Horiuchi, H. Mikoshiba, K. Nakamura and K. Hamano: IEEE Electron Device Lett. EDL- 7 (1986) ) B. S. Doyle, M. Bourcerie, J. -C. Marchetaux and A. Boudou: IEEE Electron Device Lett. EDL-8 (1987) ) W. Weber: IEEE Trans. Electron Devices ED- 35 (1988) ) M. Koyanagi, A. G. Lewis, R. A. Martin, T. Y. Huang and J. Y. Chen: Tech. Dig. Int. Elec tron Devices Meet., Washington, D. C., 1987 tron Devices Meet., San Francisco, 1988 (IEEE Publishing Services, New York, 1988) p ) W. Weber, L. Risch, W. Krautschneider and Q. Wang: Tech. Dig. Int. Electron Devices Meet., San Francisco, 1988 (IEEE Publishing Services, New York, 1988) p ) R. Bellens, P. Heremans, G. Groeseneken and H. E. Maes: Tech. Dig. Int. Electron Devices Meet., San Francisco, 1988 (IEEE Publishing Services, New York, 1988) p ) W. Weber, C. Werner and A. V. Schwerin: Tech. Dig. Int. Electron Devices Meet., Los Angeles, 1986 (IEEE Publishing Services, New York, 1986) p ) J. Y. Choi, P. -K. Ko and C. Hu : Proc. 1987

15 Meet., Washington D. C., 1985 (IEEE Publish ing Services, New York, 1985) p,56. 40) K. -L. Chen, S. A. Saller and R. Shah: IEEE 60) N. Khurana and C. L. Chiang ; Proc, Int. Re Trans. Electron Devices ED-33 (1986) 424. liability Phys. Symp., Anaheim, 1986 (IEEE 41) T. -C. Ong, K. Seki, P. -K. Ko and C. Hu: IEEE Publishing Services, New York, 1986) p Electron Device Lett. EDL-9 (1988) ) A. Toriumi, M. Yoshimi, M. Iwase, Y. Aki 42) H. Wang, M. Davis and R. Lahri: Tech. Dig. yama and K. Taniguchi : IEEE Trans. Electron Int. Electron Devices Meet., San Francisco, Devices ED-34 (1987) (IEEE Publishing Services, New York, 62) T. Figielski and A. Torum: Proc. Int. Conf. 1988) p Phys. Semiconductors, Exeter, U. K., 1962, p. 43) Y. Igura and E. Takeda : Proc Symp ) C.Chang and J. Lien: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) T. -Y. Chan, J. Chen, P. -K. Ko and C. Hu: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) H. Sasaki, M. Saitoh and K. Hashimoto: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) C. Chang, S. Haddad, B. Swaminathan and J. Lien: IEEE Electron Device Lett. EDL-9 (1988) ) I. -C. Chen, D. J. Coleman and C. W. Teng: IEEE Electron Device Lett. EDL-10 (1989) ) T. Tsuchiya: Proc Symp. VLSI Tech 50) R. Shirota, T. Endoh, M. Momodomi, R. Nakayama, S. Inoue, R. Kirisawa and F. Masuoka: Tech. Dig. Int. Electron Devices Meet., San Francisco, 1988 (IEEE Publish ing Services, New York, 1988) p ) M. Rodder: IEEE Electron Device Lett. EDL- 9 (1988) ) C. Duvvury, D. J. Redwine and H. J. Stiegler: IEEE Electron Device Lett. EDL-9 (1988) ) J. Chen, T. -Y. Chan, P. -K. Ko and C. Hu: IEEE Electron Device Lett. EDL-10 (1989) ) Y. Igura, H. Matsuoka and E. Takeda: IEEE Electron Device Lett. EDL-10 (1989) ) P. A. Childs, R. A. Stuart and W. Eccleston: Solid-State Electron. 26 (1983) ) S. Tam, F. -C. Hsu, P. -K. Ko and C. Hu: IEEE Electron Device Lett. EDL-4 (1983) ) S. Tam and C. Hu: IEEE Trans. Electron Devices ED-31 (1984) ) T. Tsuchiya and S. Nakajima: IEEE Trans. Electron Devices ED-32 (1985) ) A. Toriumi, M. Yoshimi, M. Iwase and K. Taniguchi: Tech. Dig. Int. Electron Devices 63) J. Shewchun and L. Y. Wei: Solid-State Elec tron. 8 (1964) ) E. Kamieniecki : Phys. Status Solidi 6 (1964) ) E. Takeda, H. Kume, Y. Nakagome, T. Makino, A. Shimizu and S. Asai: IEEE Trans. Electron Devices ED-30 (1983) ) M. Koyanagi, H. Kaneko and S. Shimizu: IEEE Trans. Electron Devices ED-32 (1985) ) S. Ogura, P. J. Tsang, W. W. Walker, D. L. Chritchlon and J. F. Shepard: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1981 (IEEE Publishing Services, New York, 1981) p ) H. Katto, K. Okuyama, S. Meguro, R. Nagai and S. Ikeda: Tech. Dig. Int. Electron De vices Meet., San Francisco, 1984 (IEEE Pub lishing Services, New York, 1984) p ) T. Y. Huang, W. W. Yao, R. A. Martin, A. G. Lewis, M. Koyanagi and 7. Y. Chen: Tech. Dig. Int. Electron Devices Meet., Los Angeles, 1986 (IEEE Publishing Services, New York, 1986) p ) R. Izawa, T. Kure, S. Iijima and E. Takeda: Tech. Dig. Int. Electron Devices Meet., Washington D. C., 1987 (IEEE Publishing Services, New York, 1987) p ) T. Eimori, H. Ozaki, H. Oda, S. Ohsaki, J. Mitsuhashi, S. Satoh and T. Matsukawa: Proc. 19th Conf. Solid State Devices and Materials, 73) M. Inuishi, K. Mitsui, S. Komori, M. Shimizu, H. Oda, J. Mitsuhashi and K. Tsukamoto: Proc Symp. VLSI Technology, Kyoto, 74) T. Hori, K. Kunimoto, T. Yabu and G. Fuse: Proc Symp. VLSI Technology, San Diego, 1988 (IEEE Service Center, New Jersey, 1988) p. 15.

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