28 12 8 ( ) I A I B 10:00 10:05 10:05 11:10 11:25 12:25 13:45 15:15 TL-1 1 I A 15:30 17:30 I A-3 ZnO 15 I A-4 ZnO 19 A B B A,C A,B D A A B C D I A-5 255 I A-6 27 Ian Friel A J. Isberg B A Element Six Innovation B i
I A-7 Fe β-ga 2 O 3 31 I A-8 I A-9 I A-10 I A-11 X Ce Tb 35 39 A A A A A X 43 A A 47 A A B B A A B I A-12 SrI 2 :Eu 51 A B B C D A B C D I A-13 55 I A-14 59 A,B,C A,C A,B,C B,C B,C A,C A B C LAC SYS ii
I A-15 63 A B B C A B C I A-16 DNA 67 A,B,C A,B,C A,C A,B,C B,C B,C A,C A B C LAC SYS I A-17 71 I A-18 I A-19 75 A A,B A B CuCl 79 I A-20 83 A A A,B A B I A-21 I A-22 I A-23 Floquet Hilbert 87 A B,C A B C PVA Coherent Anti Stokes Raman Spectroscopy 91 A A GaAs 95 A A iii
I A-24 2 GaAs 99 A B B A B I A-25 FDTD 103 I A-26 I A-27 THz GaAs 107 Luminescence of ZnO excited by single terahertz free electron laser pulse 111 Xingyu Sun, Masaya Nagai, Masaaki Ashida, and Goro Isoyama A Grad. Sch. Eng. Sci., Osaka Univ., A ISIR, Osaka Univ. I B 15:30 17:30 I B-28 I 115 A B A B I B-29 119 A,B C A B NIMS MaDIS C I B-30 CuCl λ- Q 123 I B-31 Cu 2 O 1S 127 A B A B I B-32 Hot Wall BiI 3 131 A B C A B C iv
I B-33 esrr THz FDTD 135 I B-34 Zr-O-N 139 I B-35 DNA 143 A B A B I B-36 147 I B-37 Cr 2 O 3 151 A A I B-38 InGaAs/InAlAs 155 A A I B-39 159 A A I B-40 163 A A A,B A B I B-41 167 v
I B-42 TADF 171 A A A A,B A,B C,D C,D A,B A B (RIMED) C (OPERA) D JST ERATO I B-43 1 175 A A,B A,C Thi Mai Huong Duong A A A A A B C I B-44 a 179 A B A,B A A B I B-45 183 I B-46 187 A A I B-47 TlInS 2 191 A Nazim Mamedov B A B I B-48 I B-49 195 GaAs 199 A A,B A A A C,D A A A B C D vi
I B-50 I B-51 203 p GaAs 207 17:40 18:40 12 9 ( ) II A II B 9:40 10:40 10:55 11:55 13:15 14:15 OL-2 11 II A 14:30 16:30 II A-52 NaCl I - 211 II A-53 YAG:Yb 215 vii
II A-54 219 II A-55 CuI 223 II A-56 CuI 227 II A-57 II A-58 CuBr 231 CuCl 1s 2p 235 II A-59 239 A A II A-60 WSe 2 243 II A-61 247 II A-62 251 A A A A B A,B A A A B II A-63 ZnO 23 A A viii
II A-64 259 A B B A B II A-65 263 A B A B II A-66 267 A B A B II A-67 271 A A A François Blanchard B A,C A B École de technologie supérieure, Dept. Electrical Eng. C (icems) II A-68 SiC 275 A B A B II A-69 Si InN 279 A A II A-70 283 A B B A B JASRI II A-71 TiSe 2 287 A A B B A B II A-72 YIG 291 A A ix
II A-73 295 A A A B B A B II A-74 CH 3 NH 3 PbI 3 299 II A-75 303 II B 14:30 16:30 II B-76 2 307 II B-77 N anatase 311 II B-78 TiO 2 315 A B A Sch. Nuclear Eng., Purdue Univ. B II B-79 THz 319 A A A ( ) II B-80 II 323 II B-81 327 x
II B-82 CuInS 2 331 煐 A A II B-83 Bi 2 Te 3 335 A A II B-84 In 0.4 Ga 0.6 As/GaAs 339 A A II B-85 CdTe 343 II B-86 II B-87 a 347 A B B C A B / C CdMnTe 351 II B-88 355 A B A B II B-89 [H dppz][hca] 359 A A A A B C D A B C D II B-90 Eu CsBr 363 xi
II B-91 II B-92 II B-93 II B-94 II B-95 II B-96 GaAs 367 A A B A B FZ Ce Sr 2 Al 2 SiO 7 371 375 A B,C C A,C A B C Ce SrO P 2 O 5 379 CH 3 NH 3 PbBr 3 383 A A A B C A B C FZ Pr 0 2% Yb 3 Al 5 O 12 387 II B-97 Type I (MoTe 2 /WSe 2 ) 391 Hong En Lim Sandhaya Koirala II B-98 Ca 2 SiO 4 :Eu 395 II B-99 THz Ge 2 Sb 2 Te 5 399 A B A C D A B C D xii