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10 DRAMLSI 20 10 631 1 3 4
1963 BCS 19731974 90 90 5 95 AMJ SEMI 10 NECHSG DRAM "" ""
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90 40 17 1
100 2 1600 280 101 1 9691 8 99 7 82 15 43 3 26,6003 12,0004 19,000 43
IC 45 9135 CZ 400mm400Kg 0.13µm4 40nm 300mm400mm 450mm 11 400Kg 11 200
2mm3mm COP COP11m 5 1 φ200mmφ400mm 3 SEM 2 SSIS
65 SEMI φ300mm 1996SSi φ400mm 7 SSi SSi 1335 φ400mm φ400mm 1986 6065 SSi 21
IC IG 30 2 LSI DRAM CZ 1 10 1 2 1 φ300mm φ400mmφ300mm φ300
3 39 ICICMOS IC 45 IC ICMOSLSI 1 L 10 954 95 φ300mm 300 21 Vol.27 No.2 2000 pp.3-7
10 BGM 12 1012 23 1012 3 1012 2 2CD 60 DRAM 3040 30 1 23 70
2002123SSIS 2 2 CD 30 UMC
IC IDM 3 3 2 1 LSI LSI LSI LSI version LSI ISSCC LSI 2 LSI LSILSI LSI LSI LSI ASSPIC LSI LSI LSI 3
LSI Hynix MicronSamsung 4 25 LSI 7 RAB AB XY 11 XY XY
ABR πr 2 ABXY 2RAB πr AB 2R 2R πr 2 (A B) = + 1 A B AB π R 2 2 AB 4/π A/R A/R1/10 12.7 200mm20mm20mm 25300mm 17 3 5 5 3 5 52 2 3 10