MOSFET MOSFET JessBrown SMPS MOSFET 2 1 1 MOSFET MOSFET MOSFET AN605 AN605MOSFET MOSFET DocNo71933 MOSFET MOSFET 1 1 2 C gd _APP I g I gd C gd I gs C gd MOSFET APP _APP i g ---------------------------------------- 1 _APP 0 0V document number: 63719 www.vishay.com Revision: 02-Dec-04 1 i gs i gs i g i gs + i gd d -------------- d C gd -------------- V ---------------------------------------- GS d dv -------------- GS + C gd -------------- dv ---------------------------------------- GS _APP In( _APP ------------------------------------- ( ------------------------------------- t + ( R k g _APP ke t ( _APP ( 1 e t ( 2 3 7 8 t 9
Application Note 608 MOSFET 2 C gd 10 (V 12 10 8 6 4 2 standard complex d 0 0 10 20 Time ( 30 40 50 I gd _APP I g C gd C gd d MOSFET _APP _APP ---------------------- ( A B 2 k A B I gs 10 (V 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 standard complex 0 0 1 2 3 4 5 Time ( 9 10 tcr ( k A ( CR k + ke ----------------------------------------- 2C gd d tcr ( + k B ( CR k ke ----------------------------------------- 2C gd d CR k d k k 2 2 Rg + 2 2 C gdrg 2 + 2 Cgd 2C gd d + 2C gd 2 Rg R gd 2 2 Rgd 3 9 10 1V 1 MOSFET MOSFET 2 MOSFET 11 16 4 5 BJ Baliga 1 app MOSFET BJBaligaPowerSemiconductorDevices www.vishay.com document number: 63719 2 Revision: 02-Dec-04
Application Note 608 MOSFET 1 t 1 ( ( In-------------------------------- 1 ---------------------- _APP 1 t 1 ( ( In-------------------------------- 1 ---------------------- _APP 11 12 t 4 t 6 t 5 C gd t 3 t 5 ( ( C gd t 3 --------------------------------------------------------------------------- _APP 13 V F MOSFET MOSFET t 1 t 2 C gd t 3 t 4 t 5 t 6 MOSFET 6 1 Q gs Miller Q gd Q g GateChargePrinciplesandUsagePowerElectronicsEurope Issue32002Technology t 1 t 3 t 2 MOSFET t 4 ( ( C gd + In _APP ---------------------- 14 V DS t 4 ( C gd ----------------------- 15 t 6 ( ( C gd + ---------- 16 t 2 4 C gd C gd C ds C gd C gd C gd C ds Q gs document number: 63719 www.vishay.com Revision: 02-Dec-04 3 Gate-Source Voltage (V Q gs 1 Q gd 2 Q g Gate Charge (nc Miller Plateau 3
Application Note 608 MOSFET Miller 1 C gd V GD Miller C gd C gd C gd V GD C gd Q gd Miller C gd C gd 1 t 2 Ibid MOSFET t 1 t 3 4 11 12 t ir t 2 t 1 C iss g fs at t ir ( ( C iss 17 x In g fs ( _APP ---------------------------------------------------------------- g fs ( _APP t vf t 3 C gd Q gdd D V FD C gd Q gd_d ( ( t vf --------------------------------------------------------------------------------------------------------- ( V 18 DS_D _D _APP + ------- g fs t vr t 5 Q gd_d ( ( t vr --------------------------------------------------------------------------------- ( V 19 DS_D _D + ------- g fs t if t 6 I DS + ------- at g fs t if ( ( C iss In ---------------------------- 20 7 www.vishay.com document number: 63719 4 Revision: 02-Dec-04 V 10 % t don ( t 1 + t ir t r t vf t doff ( t 4 t f t vr 10 % 10 % 10 % t d(on t r 10 % t d(off t f 21 22 23 24 10% t
Application Note 608 MOSFET 1Si4892DY 06 08 1 app 54 6 66 W C iss 620 775 930 C iss 0V 880 1100 1320 pf g fs 216 27 324 S APP 9 10 11 08 14 18 V 09 1 11 A Q gdd 28 35 42 nc D 135 15 165 V D 112 124 136 A R DSon 0008 001 0012 W V F 00072 001 00132 V FD 009 012 016 V 135 15 165 t 1 11 028 079 16 t ir 17 001 002 005 t vf 18 14 28 55 t 4 14 84 145 26 t vr 19 75 167 477 t if 20 006 014 044 t don 029 081 17 t r 14 28 55 t doff 84 145 26 t f 75 167 477 t don 10 20 t r 11 20 t doff 24 50 t f 10 20 5V 5AAPP 5Vapp 10W 8 9 Si4892DY t ir 17 018 044 11 t vf 18 16 37 84 t vr 19 35 79 22 t if 20 095 10 15 t ir 16 20 24 t vf 88 11 132 t vr 104 13 156 t if 28 35 42 document number: 63719 www.vishay.com Revision: 02-Dec-04 5
Application Note 608 MOSFET 2 MOSFET MOSFET MOSFETPN MOSFET 1 1 MOSFET MOSFET ( _APP g fs L V L ------------------------------------------------------------- ( + C at V iss DS _app x e t ( ( C at V iss DS 25 25 t t ir www.vishay.com document number: 63719 6 Revision: 02-Dec-04 26 tif t ir ( C at V iss DS ( _APP g fs L ( _APP + ------------------------------------------------------------- ( C at V iss DS x In-------------------------------------------------------------------------------------------------------------- ( _APP t if ( C at V iss DS g fs L 1 + ------------------------------------------------------------- ( C at V iss DS x In---------------------------------------------------------------------------------------- 27 t ir 26 47 81 132 t vf 18 16 37 84 t vr 19 35 79 22 t if 27 81 179 328 t ir 16 20 24 t vf 88 11 132 t vr 104 13 156 t if 28 35 42 MOSFET MOSFET 3