pc725v0nszxf_j

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あきたけさわまつ
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1 PC725NSZXF PC725NSZXF PC725NSZXF PC725 DE file PC725 Date Jun SHARP Corporation

2 PC725NSZXF Anode Cathode NC Emitter Collector 6 Base PC725NSZXF PC725YSZXF.6 ±.2.2 ±.3 SHARP "S" Anode PC ±.5 Factory identification.2 ±.3 SHARP "S" PC725 Anode ±.5 DE Identification Factory identification 2 3 Date code 2 3 Date code 7.2 ± ± ± ± ± ±.5.5 TYP. Epoxy resin 2.9 ± ±.5.5 TYP. Epoxy resin 2.54 ±.25.5 ± ±.5 θ θ : to 3 θ 2.54 ±.25.5 ± ±.5 θ θ : to 3 θ PC725NIPXF PC725YIPXF SHARP "S" Anode.6 ±.2.2 ± PC ±.5 Factory identification Date code SHARP "S".6 ±.2.2 ±.3 Anode PC ±.5 Factory identification Date code 7.2 ± ±.3 DE Identification 7.2 ± ± ±.5.26 ±..35 ± ±.5.26 ±..35 ± ± Epoxy resin ± Epoxy resin

3 PC725NSZXF PC725NUZXF PC725YUZXF.6 ±.2.2 ±.3.6 ±.2.2 ±.3 PC725 Factory identification SHARP "S" PC725 SHARP "S" Factory identification 6.5 ± ±.5 Date code Date code Anode DE Identification Anode 7.2 ± ± ±.3.25 ± ± ± ±.3.25 ± ± ±. Epoxy resin.75 ±.25.6 ±.5.75 ± MAX ± ±. Epoxy resin.75 ±.25.6 ±.5.75 ± MAX. 3

4 A B C D E F H J K L M N P R S T U W X A B C O N D PC725NSZXF

5 PC725NSZXF T a =25 C I F 5 ma * I FM A *2 *3 R P CEO CBO EBO I C I C P C P tot T opr T stg iso (rms) T sol µ mw ma ma mw mw C C 5 k 26 C F C t I CEO B CEO B EBO B CBO I C CE (sat) R ISO C f f C t r t f I F =ma =, f=khz CE =2, I F = I C =.ma, I F = I E =µa, I F = I C =.ma, I F = I F =ma, CE =2 I F =2mA, I C =ma DC5, 46%RH =, f=mhz CE =2, I C =2mA, R L =Ω 3dB (T a =25 C) FM I FM =.5 3. I R R =4 µa CE =2, I C =2mA, R L =Ω pf na ma Ω pf khz µs µs 5

6 PC725NSZXF DIN EN Model No. PC725NSZXF PC725YSZXF PC725NIZXF PC725YIZXF PC725NIPXF PC725YIPXF PC725NUZXF PC725YUZXF 6

7 PC725NSZXF 6 5 Forward current IF (ma) Diode power dissipation P (mw) Ambient temperature T a ( C) Ambient temperature T a ( C) 35 5 Collector power dissipation PC (mw) Total power dissipation Ptot (mw) Ambient temperature Ta ( C) Ambient temperature T a ( C) Peak forward current IFM (A). Pulse width µs T a =25 C Forward current IF (ma) T a =75 C 5 C 25 C C 25 C Duty ratio Forward voltage F () 7

8 PC725NSZXF Current transfer ratio CTR (%) Relative current transfer ratio (%) CE =2 T a =25 C R BE = R BE =MΩ R BE =5kΩ Ambient temperature T a ( C) R BE =2kΩ R BE =kω Forward current I F (ma) I F =ma CE =2 R BE = Collector current IC (ma) Collector-emitter saturation voltage CE(sat) () I F =5mA 3mA 2mA.5mA ma.7ma Ambient temperature T a ( C) R BE = T a =25 C P C (MAX.) Collector-emitter voltage CE ().5mA I F =2mA I C =ma R BE = Collector dark current ICEO (A) CE =2 R BF = Response time (µs) CE =2 I C =2mA R BE = T a =25 C t r t d t f t s Ambient temperature T a ( C).. Load resistance R L (kω) 8

9 PC725NSZXF R D Input CC Input Output R L Output CE t d t r t s % 9% t r oltage gain Av (db) R L =kω CE =2 I C =2mA R BE = T a =25 C Ω Ω Please refer to the conditions in Fig Frequency f (khz) CC R D R L Output CE Please refer to the conditions in Fig.4 9

10 PC725NSZXF

11 ( C) PC725NSZXF 3 : 26 C peak ( package surface : 25 C peak) 2 5 to 8 C, 2s or less 22 C or more, 6s or less (min)

12 PC725NSZXF 2

13 2. PC725NSZXF 52 ±

14 PC725NSZXF F E D G I J H H A B C K A 6. ±.3 B 7.5 ±. C.75 ±. D 2. ±. E H I J K.4 ±..4 ± ±. 7.8 ±. 2. ±. 5 MAX. F G 4. ±. φ.5 +. e d g c a f b a 33 b 7.5 ±.5 c ±. d 3 ±.5 e f g 23 ±. 2. ±.5 2. ±.5 4

15 PC725NSZXF F E D G C I J H H A B K 5 MAX. A 24. ±.3 B.5 ±. C.75 ±. D 2. ±. E H I J K 2.2 ±..4 ±.5 4. ±. 7.6 ±. 2. ±. F G 4. ±. φ.5 +. e d g a c f b a 33 b c d 25.5 ±.5 ±. 3 ±.5 e f g 23 ±. 2. ±.5 2. ±.5 5

16 6 PC725NSZXF [E22]

pc910l0nsz_j

pc910l0nsz_j PC90L0NSZ0F PC90L0NSZ0F µ µ µ PC90L PC90L Date Sep.. 00 SHARP Corporation 7 NC Anode Cathode NC 7 GND V O (Open collector) V E (Enable) V CC H H L L H H H L H L L H L: (0) H: () PC90L0NSZ0F PC90L0YSZ0F