TB656AFG TB656AFG TB656AFG 2 PWM 2 1-2 2W1-2 4W1-2 1. (1) V DD 4.5~5.5 6 V V MA, V MB 4.5~34 4 V (4.5 = V DD = 5.5, 4.5 = V MA = 34, 4.5 = V MB = 34, V DD = V MA, V DD = V MB ) IC (2) / V DD V MA/B Low ( Pull Down ) V DD V MA/B RESET ENABLE H IC RESET High ENABLE High RESET High ENABLE High RESET H L ENABLE H L OUT H L Z Z : OFF 1
TB656AFG 2. 2.5 A (1 ) 1.5 A (1 ) 3. H-.7 Ω ( + ) 1. Ω ( + ) ( I out = 1.5 A) 4. Protect Io = 1 ma.5 V ( ) 2
TB656AFG 5. TB656AFG P D -Ta P 2 P = V DD I DD + (Ron(U + L) Io Io) 2 1-2 P = V DD I DD + {(Ron(U + L) Io 1% Io 1% (2/8)) + (Ron(U + L) Io 71% Io 71% (4/8)) + (Ron(U + L) Io % Io % (2/8))} 2 2W1-2 P = V DD I DD + {(Ron(U + L) Io 1% Io 1% (2/32)) + (Ron(U + L) Io 98% Io 98% (4/32)) + (Ron(U + L) Io 92% Io 92% (4/32)) + (Ron(U + L) Io 83% Io 83% (4/32)) + (Ron(U + L) Io 71% Io 71% (4/32)) + (Ron(U + L) Io 56% Io 56% (4/32)) + (Ron(U + L) Io 38% Io 38% (4/32)) + (Ron(U + L) Io 2% Io 2% (4/32)) + (Ron(U + L) Io % Io % (2/32))} 2 4W1-2 P = V DD I DD + {(Ron(U + L) Io 1% Io 1% (2/64)) + (Ron(U + L) Io 98% Io 98% (4/64)) + (Ron(U + L) Io 96% Io 96% (4/64)) + (Ron(U + L) Io 92% Io 92% (4/64)) + (Ron(U + L) Io 88% Io 88% (4/64)) + (Ron(U + L) Io 83% Io 83% (4/64)) + (Ron(U + L) Io 77% Io 77% 4/64)) + (Ron U + L) Io 71% Io 71% (4/64)) + (Ron(U + L) Io 63% Io 63% (4/64)) + (Ron(U + L) Io 56% Io 56% (4/64)) + (Ron(U + L) Io 47% Io 47% (4/64)) + (Ron(U + L) Io 38% Io 38% (4/64)) + (Ron(U + L) Io 29% Io 29% (4/64)) + (Ron(U + L) Io 2% Io 2% (4/64)) + (Ron(U + L) Io 1% Io 1% (4/64)) + (Ron(U + L) Io 1% Io 1% (2/64))} 2 V DD = I DD = Ron(U + L) = ( + ) Io = (1% ) GND 3
TB656AFG 6. 5 V 1 μf 1 μf 47 μf 1 μf 24 V V DD V MA V MB RESET ENABLE M1 Logic H-SW A PWM OUTAP OUTAM MCU or M2 CW/CCW DCY1 DCY2 Current control NFCompA H-SW B PWM OUTBP OUTBM N FA RNFA M TQ1 NFCompB TQ2 Protect N FB RNFB OSC SGND SGND R1 R2 1 pf 4 khz.5 Ω: Iout (max) = 1. A : IC IC (V DD, V MA, V MB ) (OUTAP, OUTAM, OUTBP, OUTBM) IC V DD V M GND IC ( ) IC IC TB656AFG 1 2.5 A 2 1 (4.5 = V DD = 5.5, 4.5 = V MA/B = 34, V DD = V MA/B ) IC 4
(1) V DD GND IC TB656AFG V DD GND 1 μf~1 μf.1 μf~1 μf (2) V M V M GND IC V M GND 1 μf~1 μf.1 μf~1 μf (3) NFA, NFB NFA, NFB RNFA, RNFB A B NFA, NFB.5 V ( 1%) Iout (A) =.5 V/RNF (Ω) ) 1 A.5 Ω (4) OSC (C OSC ) t w () OSC CR 1~1 pf : f osc = 1/(C OSC 1.5 (1/C OSC +1)/66) + 1 khz ( ) f osc t w () C OSC (C OSC ) (f OSC ) (t w () ) ( ) 1 pf 44 khz 9 μs 33 pf 13 khz 3 μs 1 pf 4 khz 1 μs : C OSC duty ( duty 5% ) 5
TB656AFG (5) Decay (DCY1 DCY2 ) ( ) : (a) Normal ( Decay = %, DCY1 = Low, DCY2 = Low) (b) 5%Decay ( Decay = 5%, DCY1 = Low, DCY2 = High) A B NFA 6
TB656AFG 7. M1 M2 2 1-2 2W1-2 4W1-2 CW/CCW 2 (M1: L, M2: L, CW ) CW 1 I A 1 1 I B 1 t t 1 t 2 t 3 t 4 t 5 t 6 t 7 1-2 (M1: H, M2: L, CW ) CW 1 71 I A 71 1 71 I B 71 1 t t 1 t 2 t 3 t 4 t 5 t 6 t 7 t 8 7
TB656AFG 2W1-2 (M1: H, M2: H, CW ) CW 1 98 92 83 71 56 38 2 I A 2 38 56 71 83 92 98 1 1 98 92 83 71 56 38 2 I B 2 38 56 71 83 92 98 1 t t 1 t 2 t 3 t 4 t 5 t 6 t 7 t 8 t 9 t 1 t 11 t 12 t 13 t 14 t 15 t 16 t 17 t 18 t 19 t 2 t 21 t 22 t 23 t 24 t 25 t 26 t 27 t 28 t 29 t 3 t 31 t 32 8
TB656AFG 4W1-2 (M1: L, M2: H, CW ) [%] 1 98 96 92 88 83 77 71 63 56 47 38 29 2 A B 1 1 2 29 38 47 56 63 71 77 83 88 92 96 98 1 STEP 9
TB656AFG CK M1 M2 RESET 1 91 71.4 4 I A 4 71.4 91 1 1-2-phase excitation M1, M2 ( = Low) RESET Low M1, M2 = Low RESET Low 1
TB656AFG RoHS RoHS 11