1. 2 2. 5 3. 6 4. 6 5. 6 6. 6 1 7. 7 8. 7 9. 7 10. 7 11. 8 12. 8 13. 9 14. 9 15. 9 16.LSI 9 17. 10 11 7 ( ) 10 11 7 ( ) 11 11 8 ( ) 12 11 8 ( ) 14 11 9 ( ) 16 11 9 ( ) 17 18. 18 19. 20 20. 22 2
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2 5F 1-4-2 Tel: 06-6873-2010 ( ) 6F 2-1-D-1 Tel: 06-6872-2211 5
3 5F 6F 4 Dr. Hans W. P. Koops (HaWilKo GmbH) Fast lithography for dyes, how to speed up defect review, and precision photo mask repair 11 8 16:40 17:40 5 I & II SiC 11 7 ( ) 13:25 18:00 6 11 8 ( ) 13:30 14:30 6F 6
7 25 30 8 2 8 ( ) A 9 LSI (6 ) (2, 3 ) (2 ) 10 10 00910-0-16745 ( ) 7
6843152 Web Web Web PDF 11 10 26 ( ) Web http://www-lsits.ist.osaka-u.ac.jp/ 12 11 2 ( )17:00 8
10% 13 5 Web http://www.senri-htl.co.jp/ 14 Web http://www-lsits.ist.osaka-u.ac.jp/ 15 () () () ( ) () ( ) (DCG ) () () () () () 16 LSI LSI 565-0871 2-1 Tel/Fax: 06-6879-7813 / 06-6879-7812 E-mail: LSITS@ist.osaka-u.ac.jp Web: http://www-lsits.ist.osaka-u.ac.jp 9
17 11 7 ( )................. 9:00 9:05................. (1) 9:05 (2) 9:30 I 7 ( ) a.m. CHARMs (a, (a, (b / a), b) SEM metrology at sub-10 nm: challenges and solutions S. Babin, S. Borisov, I. Gudich, C. Peroz, P. Yushmanov / abeam Technologies, Inc. (3) X 9:55, / X.................. 10:20 10:40.................. II (4) 10:40 (5) 11:05 7 ( ) a.m. SEM,, / () (a, (a, (a, (a, J. Yongdeok (b, Y. Yusin (b, C. Suejin (c / a) ER Center, b), c) (6) 20nm 11:30, /........... 11:55 12:25.......................... 12:25 13:25............... 10
11 7 ( ) I 7 ( ) p.m............. 13:25 13:30............ (7) 13:30 (8) 13:50 (9) 14:10 (10) 14:30 (11) 14:50 (a, (a, (a, (b, (c / a), b), c), / (a, (a, (a, (a, (a, (a, (a, (a, (b, (b / a) ON Semiconductor, b) ON Semiconductor LSI 2 TEM, / SM / (12) 15:10, /.................. 15:30 15:50.................. (13) 15:50, / DCG 11
(14) 16:10 (15) 16:35 Power MOSFET (a, (a, (b, (b, (c, (d / a), b), c) DCG, d) CIM (a, (a, (a, (b, (c, (d / a) &, b), c) DCG, d) CIM II SiC 7 ( ) p.m. (16) 17:00 (17) 17:30 (18) 9:00 (19) 9:25 (20) 9:50 SiC / SiC / 11 8 ( ) TEM 8 ( ) a.m. 30 kv STEM MOS (a, (a, (a, (b, (b, (a / a), b) STEM, / EM (a, (b, (b, (a, (c / a), b), c) 12
.................. 10:15 10:35.................. (C1) 10:35 (C2) 10:42 (C3) 10:48 (C4) 10:55 (C5) 11:01 (C6) 11:08 (C7) 11:14 (C8) 11:21 (C9) 11:27 (C10) 11:34 8 ( ) a.m. ATE Post-Silicon (a, (a, (b, (c, (c / a), b) SoC, c) IC Design Visualization System LAVIS-plus (a, (b / a) TOOL, b) TOOL EDA / 1 Marrive,,,,,,, / ELITE / 3D,, / 3 CT (a, (a, (b, (b / a), b) YAG (a, (b / a), b) TNS FIB Cut&See,,,,,,, / BT EDS FESTEM NMOS (a, (b, (b / a), b) EM 13
(C11) 11:40 (C12) 11:47 Super-X EDS / CAMECA,, / (C13) 11:53, /.................. 11:59 12:05............................. 12:05 12:30.......................... 12:30 13:30............... 11 8 ( ) 8 ( ) p.m............ 13:30 14:30 6F........... (21) () SEM (III),, / (22) (a, (a, (b, (b, (b, (a / a), b) & (23), / (24) (a, (b, (a / a), b) (25),, / 14
(26) LSI TDDB,, / (27) VLSI, / (28) pn,,,, / (29) Pb (Zr, Ti) O3 (a, (a, (a, (a, (b, (b, (c, (a, (a / a), b), c) (30) CVD AlOx (a, (b, (b, (a / a), b) I (31) 14:30 (32) 14:55 (33) 15:20 8 ( ) p.m. CW - (LVX) SCAN J. Liao / OBIC (TOBIC: Two-photon Optical Beam Induced Current) (a, (c, (b, (b, (a, (c, (c, (d / a) &, b), c), d) Open failure detection in 3D device non-destructively J. Gaudestad (a, A. Orozco (a, V. Talanov (a, P.C. Huang (b / a) Neocera Magma Group, b) TSMC 3D Fault Isolation group 15
(34) 15:45,, /........... 16:10 16:40........... (S1) 16:40 8 ( ) p.m. Fast lithography for dyes, how to speed up defect review, and precision photo mask repair H.W.P. Koops / HaWilKo GmbH 8 ( ) p.m. 18:30 21:00 (35) 9:00 (36) 9:25 11 9 ( ) II 9 ( ) a.m. X 3 CT (a, (a, (b, (b, (b, (b, (c, (c, (d / a) 2, b) DCG, c), d) 3 NEPS (a, (b / a), b) (37) AFM 9:50,, / Wafer Integration.................. 10:15 10:35.................. 16
I (38) 10:35 (39) 11:00 (40) 11:25 (41) 11:50 9 ( ) a.m.,,,, / C-V,, / MONOS, / High quality insulator deposition for advanced circuit edit applications H. Tanaka (a, V. Makarov (a, S. Motegi (b, R. Jain (a / a) DCG Systems Inc., b) DCG Systems K. K. Solution Application........... 12:15 12:45.......................... 12:45 13:45............... II (42) 13:45 (43) 14:10 11 9 ( ) 9 ( ) p.m. STEM-EELS low-k (a, (b, (a, (b, (a, (a, (a / a), b) Hf TDDB (a, (a, (a, (a, (b, (a, (a, (a, (a, (a, (c / a), b), c) 17
(44) 14:35 UV NiPt (a, (b, (b, (a, (b, (b, (b / a) b),.................. 15:00 15:20.................. III (45) 15:20 (46) 15:45 (47) 16:10 (48) 16:35 9 ( ) p.m. (a, (a, (a, (b / a), b) 3D FIB-SEM LSI,,,,,,, / BT (), / LSI SEM (a, (b, (a, (c, (a / a) Global Application Center, b) &, c)........... 17:00 17:30........... 18 C A. Orozco,...... 33 C. Peroz,......... 2 H.W.P. Koops,... S1 H. Tanaka,...... 41 I. Gudich,........ 2 J. Gaudestad,.... 33 J. Liao,......... 31 P.C. Huang,..... 33 P. Yushmanov,.... 2 R. Jain,......... 41 S. Babin,......... 2 S. Borisov,....... 2 S. Motegi,.......41 V. Makarov,..... 41 V. Talanov,...... 33........ 39........ 45........ 48........ 18.... C9, 46.. 42, 43 18....... C7........ 37....... C1........ 22........ 20....... C4....... C1.... C12........ 39.... 13, 35.... 28, 38....... C4........ 36
........ 18......... 3....... C1........ 43.... C11...... C12........ 46........ 30........ 28.... 14, 15 19, C10, 45.... 18, 48........ 46........ 43........ 37........ 26......... 9........ 18........ 20......... 8......... 9........ 38......... 9......... 3........ 28......... 1........ 42........ 29........ 22........ 42....... C4...... 30....... C1........ 29......... 7........ 44........... 7.... 43, 44........ 43........ 45....... C6........ 35....... C6....... C4.... C13........ 43... 19, C10........ 18......... 9........ 35.....4, 6........ 24....... C9.... 29, 30......... 9....... C1........ 37....... C8........ 14........ 10....... C9........ 12....... C9....... C6........ 10.... C9, 46...... C10........ 18.... C7, 35........ 38........ 22........ 29...... C13....... C2........ 16.... C7, 35...... C12........ 25........ 40........ 20........ 44........ 32........ 35....... C9........ 32....... C8........ 43........ 46........ 42 22, 23, 24, 25, 26, 27, 34, 43....... C4........ 32 13, 14, 15, 35........ 29........ 29........ 32...... 48.... C9, 46.... 43, 44........ 35........ 20........ 32........ 12....... C2........ 32......... 9......... 7 19. 42, 43, 44.... 11, 48........ 24.... C9, 46........ 42....... 4, 6.... 14, 15........ 20......... 9.... 14, 15........ 29........ 43........ 30........ 42........ 45...... 40. 28, 32, 38......... 8........ 38........ 29....... C4........ 34........ 36.......... 46 22, 25, 27, 34...... 44.... 23, 26....... C5........ 28......... 4....... C3......... 7........ 44...... 22........ 15......... 7........ 39........ 29........ 17....... C4......... 9....... 1.... 14, 15........ 48........... 1....... C4........ 32.... C7, 35......... 9......... 9
19 11 8 ( ) 9 ( ) 10:00 17:00 6F () C 1. : (C1) T2000 FTA 2. : CloudTesting Service 3. TOOL : (C2) IC Design Visualization System LAVIS-plus 4. : (C3), (SMM), FE-SEM 8500 5. : (C4) (Cell-Count CAD-Navigation) 6. : 7. : (C6) 8. : (C8) YAG 9. : (C9) SIM Cut&See 10. : (C11) FIB/SEM/TEM 11. : IC PL101 20
12. : IREM-SIL TriWave ImageIR 13. : JEM-2800 14. : (C13) SIL Bni31 15. : 16. : ( ) Down Stream 17. : ELITE X CT 18. DCG : (C5) 19. : F/A Lit 20. : CAD Camelot 21. MultiProbe Inc.: AFP-The future of NanoProbing 22. : SEM CHARIOT, etc. 23. : PM5 24. Wafer Integration : AFM 25. : AFM 26. : 27. : 28. : CAMECA 29. ATE : Pyramid Probecard 21
20 ( 24 10 10 50 ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ATE ( ) ( ) ( ) ( ) TOOL( ) ( ) ( ) DCG ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) ( ) Hysitron, Inc. MultiProbe Inc. Wafer Integration( ) 22 ( 24 10 26 )