Frontier Simulation Software for Industrial Science
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1 PACS-CS FIRST
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4 IT IT H14~H16 CHASE CHASE-3PT Protein Protein-DF ABINIT-MP
5 CMOS Si-CMOS CMOS-LSI CMOS ATP 10nm
6 CMOS CMOS-LSI LSI 90nm CMOS 90nm CMOS SiO2 SiO nm nm Si Si SiO SiO 2 (ε=3.9) =3.9) High High-k CMOS CMOS Si Si High High-k (ε>10) >10) High High-k Al2O3 Al2O3
7 Paradigm shift Bottom-up paradigm Top-down paradigm Chem/Bio /Bio-inspired inspired assembly Pre-patterning Micro/nano fabrication Micro/nano lithography Micro/nano contact printing
8 N 3 N Hybrid Hybrid
9 1964: Density Density-Functional Theory Walter Kohn: (1998) 1982: (BHS) Si (1982) 1% 1%
10 1985: Car & Parrinello Si(111)-(7x7) DASDimer-Adatom-Stacking fault 1985 nm 2.2nm DAS 1992 DAS STM 2.2nm Si
11 CHASE CHASE-3PT 3PT PHASE PHASE ABCAP ABCAP UVSOR UVSOR Trans Trans Phonon Phonon STM STM Hybrid Hybrid OrderN OrderN XPS XPS CIAO CIAO CHASE CHASE-3PT 3PT MEMS MEMS
12 : PHASE, CIAO, ABCAP : PHASE, CIAO, ABCAP PHASE (PW) LDA, GGA Ultrasoft Ultrasoft, Troullier-Martins MartinsCIAO ABCAP ABCAP + GW FLAPW LDA, GGA, LDA+U PHASE UVSOR, Hybrid fsis.iis.u-tokyo.ac..ac.jp/theme/nanoscal/
13 CIAO PHASE CIAO
14 : PHASE, CIAO, ABCAP PHASE, ABCAP, CIAO Si Si Fe Fe LaMnO 3 ABCAP Si Si(001) (001)STM PHASE
15 CVD Si Si HfO 2 SiO 2 /Si HfO 2 /Si TiSi 2 /Si SiON SiON/Si Ge/Si Hut clusters 50nm GeH4 GS-MBE MBE
16 Si Si/SiO2 PHASE Si/SiO2 /SiO2 400 weak bond Pb0 + trimer 20 nm Si/SiO 2 Si/HfO
17 Si Si CAMUS Si(001) (001) O 2 FP/TB/MM [001] Si Si FP TB MM 60 backbond oxidation
18 CAMUS-FSIS AFM AFM : AFM) SEM µ FP( ) TB( ) ~5000 MM( ) 0.0 psec 0.1 psec 0.2 psec Si Si
19 SiO2 90nm CMOS M-PHz SiO2 1.2nm 0 SiO 2 Al 2 O 3 HfO 2 Zr-SiO 2 ZrO 2 CeO 2 (Hz)
20 HfO2, Al2O3 UVSOR HfO 2, Al 2 O 3 HfO 2 Monoclinic Tetragonal ε ave Lattice Electron Total Cubic Tetragonal Monoclinic Exper.. (mon( mon.) ~5 16~25 α-al 2 O 3 ε ave Lattice Electron Total present Exper
21 UVSOR Ce Epitaxial CeO 2 (111)/Si Si(111) CeO 2 (MBE: Ce,O 3 ) Si = 0.35% (1) CeO 2 (= 52 ) > (26) (2) CeO a 0.6% 0.6% => ε = 1.3 (3) Ce 2 O 3 => CeO 2 Hexagonal Ce 2 O 3 Cubic Ce 2 O 3 a Dielectric constant 30 Electronic 25 Lattice c-ce2o3 h-ce2o3 CeO2 CeO2 Theory Experiment [*] N. I. Santha et al., J. Am. Ceram. Soc., 87 (2004)
22 top-down down bottom-up High-k CMOS CNT High-k (ε>10) >10) Si
23 vs. Lippmann-Schwinger Schwinger N. Lang, Phys. Rev. B 52, 5335 (1995), Phys. Rev. Lett (1994) Green Green NEGF J. Taylor, Phys. Rev. B 63, (2001) M. Brandbyge,, Phys. Rev. B 65, (2002) H. J. Choi and J. Ihm,, Phys. Rev. B 59, 2267 (1999), Phys. Rev. B67, (2003)
24 CNT CNT TRANS TRANS CNT CNT Peapod Peapod C60@CNT C60@CNT C120 C120
25 Conductance ( x G 0 ) Switching Elevation angle ( deg )
26 DNA Poly( Poly(dG)-poly( poly(dc) Poly(dG dg)-poly( poly(dc) ) gap=1.4~2 ev X PO 4 - PO 4- X Mg ++ cation PO 4 - PO 4- Mg ++ X PO 4 - PO 4- X X PO 4 - PO 4- X Blue=LUMO, Red=HOMO HOMO/LUMO guanine guanine C G G: guanine C: cytosine Kino, et al.: JPSJ
27 DNA HF Ferromagnetic α β s(mg)-p(o) anti-bond LUMO HOMO SOMO LUMO hole- doping
28 CNT NEMS CNT CNT CNT
29 screw gear bearing K,Miura, et al, PRL 90, (2003) Takagi, Uda,, and Ohno: : JCP (in press)
30 CHASE CHASE-3PT 3PT - PHASE PHASE ABCAP ABCAP Epsilon Epsilon Trans Trans Phonon Phonon STM STM Hybrid Hybrid OrderN OrderN XPS XPS CIAO CIAO CHASE CHASE-3PT 3PT Pt
31
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Tokyo Institute of Technology high-k/ In.53 Ga.47 As MOS - Defect Analysis of high-k/in.53 G a.47 As MOS Capacitor using capacitance voltage method,,, Darius Zade,,, Parhat Ahmet,,,,,, ~InGaAs high-k ~
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Drain Voltage (mv) 4 2 0-2 -4 0.0 0.2 0.4 0.6 0.8 1.0 Gate Voltage (V) Vds [V] 0.2 0.1 0.0-0.1-0.2-10 -8-6 -4-2 0 Vgs [V] 10 1000 1000 1000 1000 (LSI) Fe Catalyst Fe Catalyst Carbon nanotube 1~2 nm
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スライド 1
High-k & Selete 1 2 * * NEC * # * # # 3 4 10 Si/Diamond, Si/SiC, Si/AlOx, Si Si,,, CN SoC, 2007 2010 2013 2016 2019 Materials Selection CZ Defectengineered SOI: Bonded, SIMOX, SOI Emerging Materials Various
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実空間差分法に基づく 第一原理電子構造 量子輸送特性計算 09/05/15 大阪大学大学院工学研究科小野倫也 Real-space first-principles calculation code The grand-state electronic structure is obtained by solving the Schrödinger (Kohn-Sham) equation 1 2
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213 74 AlGaN/GaN Influence of metal material on capacitance for Schottky-gated AlGaN/GaN 1, 2, 1, 2, 2, 2, 2, 2, 2, 2, 1, 1 1 AlGaN/GaN デバイス ① GaNの優れた物性値 ② AlGaN/GaN HEMT構造 ワイドバンドギャップ半導体 (3.4eV) 絶縁破壊電界が大きい
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スライド 1
Front End Processes FEP WG - - NEC 1 ITRS2006 update 2 ITRS vs. 2-1 FET 2-2 Source Drain Extension 2-3 Si-Silicide 2-4 2-5 1 , FEP Front End Processes Starting Materials: FEP Si,, SOI SOI: Si on Insulator,
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11 March 2005 1 [ { } ] 3 1/3 2 + V ion (r) + V H (r) 3α 4π ρ σ(r) ϕ iσ (r) = ε iσ ϕ iσ (r) (1) KS Kohn-Sham [ 2 + V ion (r) + V H (r) + V σ xc(r) ] ϕ iσ (r) = ε iσ ϕ iσ (r) (2) 1 2 1 2 2 1 1 2 LDA Local
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第 61 回応用物理学会 青山学院大学相模原キャンパス 春季学術講演会 2014 年 3 月 18 日 ( 火曜日 ) La 2 O 3 /InGaAs 界面ラフネスに及ぼす ALD プロセスの影響 Impact of ALD process on La 2 O 3 /InGaAs interface roughness 大嶺洋 1,Dariush Hassan Zadeh 1, 角嶋邦之 2, 片岡好則
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スライド 1
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