JAIMA 2008 9 3 13:0017:30 201 XPS AES 13001310 13101340 13401410 14101440 14401510 15101520 15201540 15401620 16201700 17001720 17201730 TDK -94-
KK X X AlK1486.6eV 0.85eV MgK1253.6eV 0.7eV -95-
20eV2,500eV 0.35nm 0.35nm CMACylindrical Mirror Analyzer: CHAConcentric Hemisperical Analyzer: CMA CMA CHA CHA 10 4 10 7-96-
IWAI.Hideo@nims.go.jp AESXPSSIMS Vacuum empty 10-10 Pa1 10 7 JISZ8126-1 0 0-100% -97-
1999 10 1 SI Pa 1 Pa = 1 N/m 2 hpa TorrTorricellibar psipounds per square inches 10-8 Pa 20 P Z = 2.652 10 /scm 2 MT P PaM T K 20 P = 10-4 Pa Z = 3.6510 14 /scm 2 10 15 /cm 2 2.7310-8 Pa 10000 3-98-
150 SUS304 SUS316 Ar N 2 XPS O O O 0.1 Pa -99-
N S N S ~0.15T + + SUS (a) (b) AES XPS SIMS 0.15 T+6 kv 10-1 10-9 Pa 1000 l/s 10-7 Pa SIMS -100-
rpm 1 rpm 10-1 10-8 Pa 1 Pa 10-1 Pa µa ma pa ma -101-
B-A Bayard-Albert Gauge X 10-8 Pa PVC 5000 8000 35-102-
5000 10000 2 Ar X -103-
Ar 2 XPS 30 1960 1994 3 1994 2002-104-
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satoh.michiko@jp.fujitsu.com -109-
100 Au 80 Al 60 40 O 20 0 0 0.4 0.8 1.2 Distance ( µ m) 100 Al Ni 80 60 40 20 O 0 0 0.4 0.8 1.2 Distance ( µm) Atomic Concentration (%) Atomic Concentration (%) -110-
-111-
In Aluminum Foil In -112-
70 100-113-
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XPS X XPS XPS S/N S/B XPS XPS Figure 1 XPS Figure 2 XPS Wide XPS XPS X Figure 1 Figure 2 XPS Figure 3 C1s XPS -125-
Figure 3 Figure 2 C1s Narrow C OF XPS XPS 2 Figure 4 X Figure 4 XPS 2 XPS 10nm Ar+ XPS XPS XPS Physical Electronics1993 G. Beamson & D. Briggs, Surface Spectra Ltd. (U.K) -126-