13 EUVA EUV EUVLL (NEDO) EUV (EUVA) 10 EUVA EUV W EUV EUV LPP EUV DPP EUVA 2 Selete 26nm IMEC EUVA NEDO
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1 13 EUVA EUV EUVLL (NEDO) EUV (EUVA) 10 EUVA EUV W EUV EUV LPP EUV DPP EUVA 2 Selete 26nm IMEC EUVA NEDO EUVA EUV 2006 Selete EUVA 1. EUVA 436nm 365nm 1/17
2 KrF 248nmArF 193nm EUV 13.5nm 45nm ArF 32nm ArF EUV RET EUV 1988 NTT 50nm EUVLL 1998 ASET/EUV 1 NEDO 2001 (EUV) NEDO 13.5nm EUV EUVA 3 ( ) ( )( ) ( ) NEC ( ) ( ) ( ) i EUV LPP Laser Produced Plasma DPP Discharge Produced Plasma ii EUVA EUV 4 i ii W W W 2/17
3 EUVA EUV EUVA ASET MIRAI EUVA 2 SFET() Selete 5 EUV EUV 6 EUVA ASET EUVA Newsletter 2 EUV Sn 6 70% 7 EUVA EUVA EUV 3/17
4 2001 ASET 6 EUV EUVA 9 EUVA EUVL EUV EUV 2 ArF EUV EUV 6 EUV EUV EUV 2. EUV NEDO EUVA 11 EUV EUV EUV EUV EUV 4/17
5 EUV EUVA / W EUVA 3 EUVA 3. EUVA EUVA 13 EUVA LPP DPP LPP W 8 1.0W 9 2.2W W Xe Xe 5/17
6 YAG YAG 1.5 W 5.7W LPP 14 LPP Xe LPP 16 DPP EUVL 8.4W W W 1 Xe Sn 17 6/17
7 5. Z 18 Sn Sn 4 19 SnO2 20 Sn 21 EUVA Xe Sn EUVL ASML 180W 5 J/ J/2 100 / 115W EUVL EUVA Z DPP 30 50W 22 Sn SnH4 23 Sn DPP 786W 7/17
8 24 DPP 6 6. DPP 25 LPP Xe YAG Sn CO2 26 CO2 YAG 10 Sn W Sn W CO260W SPIE Advanced Lithography W EUV 200W CO2 Sn 7 LPP 8/17
9 7. LPP EUVA IBF 0.14nmrms EEM(Elastic Emission Machining)0.09nmrms 0.1nmrms Ru H2O 10.6Pa UV UV+O2 31 9/17
10 7. EUVA LP EUV LP EUVA EUVA EUV EUVA SWG EUV 6 EUVA SWG EUVA 8. 3 EUV 2008 EUV LPP 2 DPP 1 EUV 100 3, ArF 100 ArF EUV ASML EUV LPP 100W 2007 ASML 2008 EUV EUV EUVL SPIE Advanced Lithography EUVA LPP 60W EUV SPIE 36 EUVA W 140W 37 LP CE YAG 10/17
11 Sn CO2 DPP 1 ASML EUV1 DPP DPP Xtreme technologies GmbH ( )2001 Lmbda Physik AG () Jenoptik AG Philips Extreme UV EUV EUV EUV EUVL EUV 41 EUV SPIE Advanced Lithography 2008 EUV HVM EUV 500W DPP EUV 100kHz 6J 500W EUV 180W LPP DPP EUV DPP EUV DPP EUV EUVA SFET 2 11/17
12 EUVA LPP DPP EUV Selete 44 ASML IMEC SPIE Advanced Lithography 2008Selete EUV1 45 L/S 3 L/SL/S L/S 1 30 nm 28nm Selete ASML IMEC 1 Selete EUV ASML ASML IMEC SPIE Advanced Lithography IMEC ASML 300EUV EUV 1 EUV 32 SRAM 1 47 AMD SPIE Advanced Lithography 2008 AMD 193nm ASML EUV 1 AMD 193nm NEDO EUVA NEDO 8 EUVA ASET 12/17
13 8. NEDO EUVA (1) EUVA EUV EUV EUVA NEDO EUV (2) EUVA EUV EUV 13/17
14 (3) EUVA EUV 4WEUVA LPP DPP 2 LPP 4W XeJet/YAG (EUVA ) 4W Sn /( ) DPP EUVA ( / Z ) 4W EUVA Sn-DPP 50W Sn-CO2 LPP 52 EUVA (4) 2007 EUVA EUVA 12. EUVA EUV INVENT IMEC EUV IMEC EUV 7 24 EUVA EUV 14/17
15 EUV EUV IMEC EUVA EUV EUVA EUVA EUVA DPP LPP 1 2 EUV EUV EUVA 2007 EUV NEDO MIRAI Selete 2008 EUV EUVA Selete EUV 1 EUVA NEDO EUVA Selete NEDO EUV 3 ASML 3 EUVA Selete MIRAI EUV NEDO /17
16 3 EUVA; Extreme UltraViolet Lithography System Development Association EUVA EUVA Newsletter NEDO (MIRAI) EUVA Newsletter EUVA 9 EUVA Newsletter EUVA 11 EUVA Newsletter EUVA Present Status and Issues of Japan EUVL Development, Yashiro Horiike EUVA/ASET (The University of Tokyo) EUVA Newsletter EUVA 16 EUV 17 EUVA Newsletter EUV 19 EUVA Newsletter EUVA Newsletter EUVA Newsletter EUVA Newsletter Y. Teramoto et al, Development of high-power Sn-fueled DPP EUV source for enabling HVM, SPIE, 2006 International EUVL Symposium, Oct EUVA Newsletter EUV 2007 EUVA Technology 27 EUV EUVA Newsletter A. Endo et al, CO2 laser-produced Sn-plama source for high-volume manufacturing EUV lithography, Proc. of SPIE Vol. 6921, T-1 (2008) 30 EUV 2007 EUVA EUV 32 LP 33 EUVA Newsletter /17
17 H. Mizoguchi, EUV Source Supplier Update, Gigaphoton, SEMATECH EUV Source workshop Tech-On 2008/05/ the Fraunhofer Institute of Laser Technology EUVA NEWSLETTER I. Mori et al., Selete s EUV Program: progress and challenges, Proc. of SPIE Vol (2008) G. F. Lorusso et al., Imaging performance of the EUV alpha demo tool at IMEC, Proc. of SPIE O-1 (2008) EUVA Newsletter EUVA Newsletter EUVA Newsletter /17
Main-Title
平成 19 年 5 月 30 日 記者説明会 次世代半導体微細加工技術が実現可能に ~ 国内 EUV リソグラフィ技術開発本格化へ解像度 26nm を達成 ~ 技術説明 第三研究部 森一朗 1 EUVL 技術開発フェーズへの認識 基礎研究 φ1 Feasibility study ASET, MIRAI1/2, EUVA, Leading PJ 基礎研究要素開発 量産を目指した基盤技術開発 MIRAI3
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The Plasma Boundary of Magnetic Fusion Devices
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