LSI ( ) ( ) ( ) ( )
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- あゆみ ほうねん
- 4 years ago
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1 LSI ( ) ( ) ( ) ( ) ( ) ( )
2 2 5F Tel: ( ) 6F 2-1-D-1 Tel: F 4 5 6F 4 Dr. Hans W. P. Koops (HaWilKo GmbH) Fast lithography for dyes, how to speed up defect review, and precision photo mask repair :40 17:40 5 I & II SiC 11 7 ( ) 13:25 18: ( ) 13:30 14:30 6F 6
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4 ( ) :00 9: (1) 9:05 (2) 9:30 I 7 ( ) a.m. CHARMs (a, (a, (b / a) b) SEM metrology at sub-10 nm: challenges and solutions S. Babin, S. Borisov, I. Gudich, C. Peroz, P. Yushmanov / abeam Technologies, Inc. (3) X 9:55, / X :20 10: II (4) 10:40 (5) 11:05 7 ( ) a.m. SEM / () (a, (a, (a, (a, J. Yongdeok (b, Y. Yusin (b, C. Suejin (c / a) ER Center, b), c) (6) 20nm 11:30 / :55 12: :25 13: ( ) I 7 ( ) p.m :25 13: (7) 13:30 (8) 13:50 (9) 14:10 (10) 14:30 (11) 14:50 (a, (a, (a, (b, (c / a) b), c), / (a, (a, (a, (a, (a, (a, (a, (a, (b, (b / a) ON Semiconductor, b) ON Semiconductor LSI 2 TEM, / SM / (12) 15:10, / :30 15: (13) 15:50, / DCG 11 (14) 16:10 (15) 16:35 Power MOSFET (a, (a, (b, (b, (c, (d / a), b) c) DCG, d) CIM (a, (a, (a, (b, (c, (d / a) & b) c) DCG, d) CIM II SiC 7 ( ) p.m. (16) 17:00 (17) 17:30 (18) 9:00 (19) 9:25 (20) 9:50 SiC / SiC / 11 8 ( ) TEM 8 ( ) a.m. 30 kv STEM MOS (a, (a, (a, (b, (b, (a / a), b) STEM, / EM (a, (b, (b, (a, (c / a) b), c) 12
5 :15 10: (C1) 10:35 (C2) 10:42 (C3) 10:48 (C4) 10:55 (C5) 11:01 (C6) 11:08 (C7) 11:14 (C8) 11:21 (C9) 11:27 (C10) 11:34 8 ( ) a.m. ATE Post-Silicon (a, (a, (b, (c, (c / a) b) SoC c) IC Design Visualization System LAVIS-plus (a, (b / a) TOOL b) TOOL EDA / 1 Marrive,,,, / ELITE / 3D,, / 3 CT (a, (a, (b, (b / a) b) YAG (a, (b / a) b) TNS FIB Cut&See,,,,,, / BT EDS FESTEM NMOS (a, (b, (b / a) b) EM (C11) 11:40 (C12) 11:47 Super-X EDS / CAMECA / (C13) 11:53 / :59 12: :05 12: :30 13: ( ) 8 ( ) p.m :30 14:30 6F (21) () SEM (III),, / (22) (a, (a, (b, (b, (b, (a / a) b) & (23), / (24) (a, (b, (a / a) b) (25),, / (26) LSI TDDB,, / (27) VLSI, / (28) pn,,, / (29) Pb (Zr, Ti) O3 (a, (a, (a, (a, (b, (b, (c, (a, (a / a) b) c) (30) CVD AlOx (a, (b, (b, (a / a), b) I (31) 14:30 (32) 14:55 (33) 15:20 8 ( ) p.m. CW - (LVX) SCAN J. Liao / OBIC (TOBIC: Two-photon Optical Beam Induced Current) (a, (c, (b, (b, (a, (c, (c, (d / a) &, b), c) d) Open failure detection in 3D device non-destructively J. Gaudestad (a, A. Orozco (a, V. Talanov (a, P.C. Huang (b / a) Neocera Magma Group, b) TSMC 3D Fault Isolation group
6 (34) 15:45,, / :10 16: (S1) 16:40 8 ( ) p.m. Fast lithography for dyes, how to speed up defect review, and precision photo mask repair H.W.P. Koops / HaWilKo GmbH 18:30 21:00 (35) 9:00 (36) 9:25 8 ( ) p.m ( ) II 9 ( ) a.m. X 3 CT (a, (a, (b, (b, (b, (b, (c, (c, (d / a) 2 b) DCG c) d) 3 NEPS (a, (b / a) b) (37) AFM 9:50, / Wafer Integration :15 10: I (38) 10:35 (39) 11:00 (40) 11:25 (41) 11:50 9 ( ) a.m.,, / C-V, / MONOS / High quality insulator deposition for advanced circuit edit applications H. Tanaka (a, V. Makarov (a, S. Motegi (b, R. Jain (a / a) DCG Systems Inc., b) DCG Systems K. K. Solution Application :15 12: :45 13: II (42) 13:45 (43) 14: ( ) 9 ( ) p.m. STEM-EELS low-k (a, (b, (a, (b, (a, (a, (a / a) b) Hf TDDB (a, (a, (a, (a, (b, (a, (a, (a, (a, (a, (c / a), b) c) 17 (44) 14:35 UV NiPt (a, (b, (b, (a, (b, (b, (b / a) b) :00 15: III (45) 15:20 (46) 15:45 (47) 16:10 (48) 16:35 9 ( ) p.m. (a, (a, (a, (b / a), b) 3D FIB-SEM LSI,,,,, / BT () / LSI SEM (a, (b, (a, (c, (a / a) Global Application Center, b) & c) :00 17: C A. Orozco, C. Peroz, H.W.P. Koops,... S1 H. Tanaka, I. Gudich, J. Gaudestad, J. Liao, P.C. Huang, P. Yushmanov, R. Jain, S. Babin, S. Borisov, S. Motegi, V. Makarov, V. Talanov, C9, , C C C C1.... C , , C
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More informationLSI ( ) ( ) ( ) (
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目次 1 タイムテーブル 1. タイムテーブル 1 2. 会場 4 3. フロアマップ 5 4. 特別招待講演 5 5. ポスターセッション 5 6. オーサーズコーナー 6 7. イブニングセッション 6 8. 商業展示 コマーシャルセッション 6 9. Luncheon Seminar 6 10. 参加費 6 11. 参加申込要領 7 12. キャンセル規定 8 13. 宿泊施設のご案内 8 14.
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