センサ日本語.book(jb221_ntcg.fm)
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1 NTC SMD NTCG Type: Issue date: NTCG06(0603) NTCG10(1005) NTCG16(1608) NTCG20(2012) May 2009 RoHSEU Directive 2002/95/EC PBB PBDE
2 (1/13) NTC NTCGSMD Pb NTCG06/10/16/20 RoHS NTC Negative Temperature Coefficient Thermistor Mn Ni Co Cu 2 4 NTC NTC Y : Linear 200 Y : Log Resistance(kΩ) Resistance(kΩ) Temperature( C) Temperature( C) 0603 (L0.6 W0.3 T0.3mm) Pb Ni-Sn Sn/Ag/Cu RoHS RoHSEU Directive 2002/95/EC PBB PBDE B TCXO TCXO RF LCD CPU DVD HDD DVC/DSC RoHS EU Directive 2002/95/EC PBB PBDE
3 (2/13) L Inner electrode Thermistor body (Palladium) (Metal oxide sintering ceramics) W Sn plating T B mm L W T B ± ± ± min ± ± ± min ± ± ± min ± ± ± min. Electrode material Internal:Pd External:Ag/Ni/Sn Ag termination underlayer Ni plating 260 C max. 250 C 220 C 180 C 10s max. Natural cooling c 150 C b a b a b c to to to to to to to to to to to to 1.2 mm Preheating 60 to 120s Time(s) Soldering 60s max.
4 (3/13) Resistance Type Ω 100Ω 1kΩ 10kΩ 100kΩ 1MΩ 30Ω 1MΩ 30Ω 1MΩ 30Ω 1MΩ 470Ω 150kΩ TDK (R25) B (B25/85) TDK TCXO 30Ω to 100Ω 3250K(2800K) NTCG103EH400H 1.0kΩ to 3.0kΩ 4100K to 4500K NTCG104BH102H 30Ω to 10kΩ 3250K to 4500K NTCG104KH202J LCD LCD 22kΩ to 1MΩ 4550K to 4750K NTCG104LH473J 10kΩ to 470kΩ 4100K to 4750K NTCG104BH103J 10kΩ to 100kΩ 3435K to 4550K NTCG103JF103F CPU CPU 10kΩ to 1MΩ 3435K to 4550K NTCG103JF103F LCD LCD 22kΩ to 1MΩ 4550K to 4750K NTCG104LH473J HDD 10kΩ to 100kΩ 3435K to 4550K NTCG103JF103F NTCG104EF104F ODD CD DVD 10kΩ to 100kΩ 3435K to 4550K NTCG103JF103F NTCG104EF104F 10kΩ to 100kΩ 3435K to 4550K NTCG103JF103F 1.0kΩ to 15kΩ 3435K to 4100K NTCG104BH103J DVC DSC 10kΩ to 100kΩ 3435K to 4550K NTCG104LH473J 10kΩ to 100kΩ 3435K to 4550K NTCG103JF103F CD MD 22kΩ to 150kΩ 4550K NTCG104LH473J 1.0kΩ to 150kΩ 4100K to 4550K NTCG104LH154J 10kΩ to 47kΩ 3435K to 4550K NTCG104LH473H Type B constant(k) Nominal resistance(ω) [at 25 C] 10Ω 100Ω 1kΩ 10kΩ 100kΩ 1MΩ 2800K 100Ω 3250K 30Ω 150Ω 3435K 10kΩ K 220Ω 680Ω K 1.0kΩ 3.0kΩ K 3.3kΩ 15kΩ 4550K (0603 type: 33kΩ min.) 22kΩ 150kΩ 4750K 220kΩ 1MΩ 4500K 2.0kΩ 3.0kΩ 3250K 470Ω 680Ω 3100K 3300K 1.0kΩ 2.2kΩ 1.5kΩ 3.3kΩ K 4.7kΩ 6.8kΩ 3650K 10kΩ 15kΩ 3850K 22kΩ 33kΩ 4000K 47kΩ 68kΩ 4150K 100kΩ 150kΩ B constant is calculated from the resistance at 25 C and 85 C B B InR1 InR2 B= (1/T1) (1/T2) B: B K T1: K T2: T1 K R1: T1 Ω R2: T2 Ω 0 C=273.15K
5 (4/13) NTC G 3E H 101 T (1) (2) (3) (4) (5) (6) (7) (8) (9) (1) NTC (2) G NTC Pb øj Pitch hole E D B Paper carrier tape 0.45max.(0603) Press-pocket type for max.(1005) 1.1max.(1608) C (3) (4) B B 1 1 ( ) B (K) 3E 3201 to N 3601 to L 4501 to Q 4701 to 4750 B (K) (5) B (%) H ±3 (6) Ω Ω Ω Ω(1kΩ) Ω(10kΩ) (7) (%) H ±3 J ±5 H(±3%) 2012 (8) T B (9) 1 B 0603 B (K) A 0 to 50 B 51 to 100 C 101 to 150 E 201 to 250 F 251 to 300 J 401 to 450 K 451 to 500 L 501 to 550 N 601 to 650 Q 701 to 750 S 801 to 850 F Feed direction Final blank segment Chip-containing segment Leader blank segment 40mm min. 200mm min. mm EIA A 0.38± , ±0.2 B 0.68± , ±0.2 C 8±0.3 8±0.3 8±0.3 D 3.5± ± ±0.05 E 1.75± ± ±0.1 F 2±0.05 2±0.05 4±0.1 G 2±0.05 2±0.05 2±0.05 H 4±0.05 4±0.05 4±0.1 J , , , / / / G H A Chip-containing segment EIA 2012 A 1.5±0.2 B 2.3±0.2 C 8±0.3 D 3.5±0.05 E 1.75±0.1 F 4±0.1 G 2±0.05 H 4±0.1 J , / mm Leader segment 400mm min. Feed direction Cumulative pitch hole shift is within ±0.3mm over a 10-pitch interval. øj F Pitch hole G H A Chip-containing segment Feed direction Leader blank segment Chip-containing segment Leader blank segment Leader segment 10 to 20 pitches 20 to 40 pitches 210 to 250mm Feed direction Cumulative pitch hole shift is within ±0.3mm over a 10-pitch interval. E D B Paper carrier tape 1.1max. C
6 (5/13) 0603 B [25 C] [25/85 C] [25/50 C] A NTCG063EH300 30Ω 3250K±3% (3244K) NTCG063EH400 40Ω 3250K±3% (3244K) B NTCG062QH Ω 2800K±3% (2794K) D NTCG064KH kΩ 4500K±3% (4498K) NTCG064KH kΩ 4500K±3% (4498K) E NTCG064BH103 10kΩ 4100K±3% (4067K) H NTCG063JH103 10kΩ 3435K±3% (3380K) A B D 6pF [25 C 10 to 40MHz 0.1Vrms] - ( C) A B D E H RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) (3346 to 3414) R25=R25/R25(1.000) 30=30Ω 2R25=R25/R25(1.000) 10=10kΩ 3B25/50: 3380±1% R85=R85/R25(0.1610) R25(30Ω)=4.83Ω R85=R85/R25( ) R25(10kΩ)=0.999kΩ
7 (6/13) 1005 B [25 C] [25/85 C] [25/50 C] NTCG103EH300 30Ω 3250K±3% (3244K) A NTCG103EH400 40Ω 3250K±3% (3244K) NTCG103EH Ω 3250K±3% (3244K) NTCG104BH kΩ 4100K±3% (4096K) C NTCG104BH kΩ 4100K±3% (4096K) NTCG104BH kΩ 4100K±3% (4096K) NTCG104BH kΩ 4100K±3% (4067K) E NTCG104BH kΩ 4100K±3% (4067K) NTCG104BH103 10kΩ 4100K±3% (4067K) NTCG104LH223 22kΩ 4550K±3% (4485K) NTCG104LH333 33kΩ 4550K±3% (4485K) F NTCG104LH473 47kΩ 4550K±3% (4485K) NTCG104LH683 68kΩ 4550K±3% (4485K) NTCG104LH kΩ 4550K±3% (4485K) NTCG104LH kΩ 4550K±3% (4485K) NTCG104QH kΩ 4750K±3% (4661K) G NTCG104QH kΩ 4750K±3% (4661K) NTCG104QH kΩ 4750K±3% (4661K) NTCG104QH MΩ 4750K±3% (4661K) H NTCG103JH103 10kΩ 3435K±3% (3380K) J NTCG104BF473 47kΩ (4150K) 4085K±1% NTCG104BF683 68kΩ (4150K) 4085K±1% K NTCG104EH kΩ (4308K) 4250K±3% U NTCG103UH103J 10kΩ 3950K±3% (3900K) A C 3pF [25 C 10 to 40MHz 0.1Vrms]
8 (7/13) ( C) A C E F RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) R25=R25/R25(1.000) 30=30Ω R85=R85/R25(0.1610) R25(30Ω)=4.83Ω 2R25=R25/R25(1.000) 10=10kΩ R85=R85/R25( ) R25(10kΩ)=0.999kΩ
9 (8/13) ( C) G H J K U RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) (3346 to 3414) (3928 to 4171) (3783 to 4017) B25/50: 3380±1% 2 B25/50: 4050±3% 3 B25/50: 3900±3%
10 (9/13) 1608 B [25 C] [25/85 C] [25/50 C] NTCG163EH300 30Ω 3250K±3% (3244K) A NTCG163EH400 40Ω 3250K±3% (3244K) NTCG163EH Ω 3250K±3% (3244K) C NTCG164BH kΩ 4100K±3% (4096K) NTCG164BH kΩ 4100K±3% (4096K) NTCG164BH kΩ 4100K±3% (4067K) E NTCG164BH kΩ 4100K±3% (4067K) NTCG164BH103 10kΩ 4100K±3% (4067K) NTCG164LH223 22kΩ 4550K±3% (4485K) NTCG164LH333 33kΩ 4550K±3% (4485K) F NTCG164LH473 47kΩ 4550K±3% (4485K) NTCG164LH kΩ 4550K±3% (4485K) NTCG164LH kΩ 4550K±3% (4485K) NTCG164QH kΩ 4750K±3% (4661K) G NTCG164QH kΩ 4750K±3% (4661K) NTCG164QH kΩ 4750K±3% (4661K) NTCG164QH MΩ 4750K±3% (4661K) H NTCG163JH103 10kΩ 3435K±3% (3380K) J NTCG164CH473 47kΩ 4150K±3% (4050K) A C 3pF [25 C 10 to 40MHz 0.1Vrms] - ( C) A C E F RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) R25=R25/R25(1.000) 30=30Ω R85=R85/R25(0.1610) R25(30Ω)=4.83Ω 2 R25=R25/R25(1.000) 10=10kΩ R85=R85/R25( ) R25(10kΩ)=0.999kΩ
11 (10/13) ( C) G H J RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) (3346 to 3414) (3928 to 4171) B25/50: 3380±1% 2 B25/50: 4050±3%
12 (11/13) B [25 C] [25/85 C] [25/50 C] NTCG163JF103 10kΩ± % 3435K±1% (3380K) H NTCG103JF103 10kΩ± % 3435K±1% (3380K) NTCG063JF103 10kΩ± % 3435K±1% (3380K) J NTCG104BF473 47kΩ± % (4150K) 4085K±1% K NTCG104EF kΩ± % (4308K) 4250K±1% F ±1% G ±2% H ±3% - ( C) H J K RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) (3346 to 3414) (3928 to 4171) B25/50: 3380±1% 2 B25/50: 4050±3%
13 (12/13) 2012 L M N P Q R S T B [25 C] [25/85 C] [25/50 C] NTCG203EH471J 470Ω±5% 3250K±3% (3232K) NTCG203EH681J 680Ω±5% 3250K±3% (3232K) NTCG203BH102J 1.0kΩ±5% 3100K±3% (3060K) NTCG203BH152J 1.5kΩ±5% 3100K±3% (3060K) NTCG203FH222J 2.2kΩ±5% 3300K±3% (3248K) NTCG203FH332J 3.3kΩ±5% 3300K±3% (3248K) NTCG203JH472J 4.7kΩ±5% 3450K±3% (3392K) NTCG203JH682J 6.8kΩ±5% 3450K±3% (3392K) NTCG203NH103J 10kΩ±5% 3650K±3% (3590K) NTCG203NH153J 15kΩ±5% 3650K±3% (3590K) NTCG203SH223J 22kΩ±5% 3850K±3% (3782K) NTCG203SH333J 33kΩ±5% 3850K±3% (3782K) NTCG204AH473J 47kΩ±5% 4000K±3% (3931K) NTCG204AH683J 68kΩ±5% 4000K±3% (3931K) NTCG204CH104J 100kΩ±5% 4150K±3% (4085K) NTCG204CH154J 150kΩ±5% 4150K±3% (4085K) - ( C) L M N P Q R S T RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) RT/R25 B(25/T) R25=R25/R25(1.000) 470=470Ω R85=R85/R25(0.161) R25(470Ω)=75.67Ω 2R25=R25/R25(1.000) 3.3=3.3kΩ R85=R85/R25(0.156) R25(3.3kΩ)=0.5148kΩ
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お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
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