MAX3736 DS.J
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- たかよし りゅうとう
- 9 years ago
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1 ; Rev 0; 12/03 PART TEMP RANGE PIN-PACKAGE E/D -40 C to +85 C Dice* ETE -40 C to +85 C 16 Thin QFN * HOST BOARD SFP OPTICAL TRANSMITTER HOST FILTER VCC_RX SUPPLY FILTER +3.3V 15Ω 56Ω 0.01µF VCC SERDES 0.1µF 0.1µF IN+ BIAS IN- BC_MON DIS MODSET BIASSET GND 8.2pF Ω FERRITE BEAD TX_DISABLE MOD-DEF1 MOD-DEF2 LASER CONTROLLER Maxim Integrated Products 1
2 ABSOLUTE MAXIMUM RATINGS Power-Supply Voltage V to +6.0V Voltage at IN+, IN-, DIS V to ( + 0.5V) Voltage at BC_MON, MODSET, BIASSET V to +3.0V Voltage at,. +0.5V to ( + 1.5V) Voltage at BIAS V to ( + 0.5V) Current into BIAS,,...-mA to +150mA Current into IN+, IN-... -ma to +ma Continuous Power Dissipation (T A = +85 C) 16-Pin Thin QFN (derate 25mW/ C above +85 C)...2W Operating Junction Temperature Range C to +150 C Storage Temperature Range C to +150 C Die Attach Temperature C Lead Temperature (soldering, s)...+0 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS ( = +2.97V to +3.63V, T A = -40 C to +85 C. Typical values are at = +3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power-Supply Current I CC Excludes the laser bias and modulation currents (Note 2) I/O SPECIFICATIONS ma Differential Input Voltage V ID V ID = V IN+ - V IN-, Figure V P-P 0.6 Common-Mode Input Voltage V INCM V Differential Input Resistance R IN Ω DIS Input Pullup Resistance R PULL kω DIS Input Current V DIS = 15 V DIS = GND, = 3.3V, R PULL = 7.4kΩ -450 DIS Input High Voltage V IH 2.0 V DIS Input Low Voltage V IL 0.8 V BIAS GENERATOR Bias Current Range I BIAS Current into BIAS pin 1 0 ma Bias Off-Current I BIASOFF Current into BIAS pin, DIS asserted high 0 µa BIASSET Current Gain G BIAS (Note 3) 5mA I BIAS ma ma I BIAS 0mA BIASSET Current Gain Stability ma I BIAS 0mA (Note 4) % BIASSET Current Gain Linearity ma I BIAS 0mA (Note 5) % Bias Overshoot During SFP module hot plugging; see Figure 3 (Notes 5, 6) µa A/A % Bias-Current Monitor Gain (Note 5) 13.7 ma/a 1mA I BIAS 5mA 4 Bias-Current Monitor Gain 5mA I BIAS ma % Stability (Notes 4, 5) ma I BIAS 0mA Current into, R L = 15Ω, V and V 0.6V (DC-coupled) Modulation Current Range I MOD Current into, R L = 15Ω, V and V 2.0V (AC-coupled) ma P-P 2
3 ELECTRICAL CHARACTERISTICS (continued) ( = +2.97V to +3.63V, T A = -40 C to +85 C. Typical values are at = +3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) (Note 1) MODULATOR PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Modulation Current Gain G MOD (Note 3) 5mA I MOD ma ma I MOD 85mA Modulation Current Gain Stability ma I MOD 85mA (Notes 4, 5) % Modulation Current Gain Linearity ma I MOD 85mA (Note 5) % Bias Current Gain and Modulation Current Gain Matching (Notes 5, 7) I BIASSET = 0.15mA; I MODSET = 0.7mA 2.3 I BIASSET = I MODSET = 0.15mA I BIASSET = I MODSET = 0.4mA I BIASSET = I MODSET = 0.6mA I BIASSET = I MODSET = 0.9mA Modulation OFF Current I MODOFF DIS asserted high 0 µa Rise Time t R % to 80%; ma I MOD 60mA (Note 5) ps Fall Time t F 80% to %; ma I MOD 60mA (Note 5) ps ma I MOD 60mA; 2.67Gbps; PRBS A/A % Deterministic Jitter (Notes 5, 8) ma I MOD 60mA; 3.2Gbps; K28.5 pattern ma I MOD 60mA; 155Mbps; PRBS ps P-P ma I MOD 60mA; 3.2Gbps; K28.5; T A = +0 C 6.3 ps Random Jitter ma I MOD 60mA (Note 5) ps RMS Note 1: Specifications at -40 C are guaranteed by design and characterization. Dice are tested at T A = +25 C only. Note 2: Maximum value is specified at I MOD = 60mA and IBIAS = 0mA. BC_MON connected to. Note 3: Modulation current gain, G MOD, is defined as G MOD = I MOD / I MODSET. Bias current gain, G BIAS, is defined as G BIAS = I BIAS / I BIASSET. The nominal gain is measured at = +3.3V and T A = +25 C. Note 4: Gain stability is defined as [(Gain) - (Nom_Gain)] / (Nom_Gain) over the listed current range, temperature, and supply variation. Nominal gain is measured at = +3.3V, T A = +25 C. The voltage at the BC_MON pin must not exceed 1.39V. Note 5: Guaranteed by design and characterization; see Figure 2. Note 6: turn-on time must be less than 0.8s, DC-coupled interface. Note 7: The gain matching is defined as ABS [(G MOD /G BIAS - G MODNOM /G BIASNOM )/(G MODNOM /G BIASNOM )] over the specified temperature and voltage supply range. Note 8: For supply noise tolerance, noise is added to the supply (0mV P-P ) up to 2MHz; see Figure 3. 3
4 VOLTAGE V IN+ (V IN+ ) - (V IN- ) CURRENT I 0mV MIN mv MAX 0mV P-P MIN 2400mV P-P MAX V IN- 25Ω 1.1pF 26Ω Ω OSCILLOSCOPE I MOD I 1Ω SOURCE NOISE HOST BOARD FILTER DEFINED BY SFP MSA 1µH MODULE TO LASER DRIVER OPTIONAL VOLTAGE SUPPLY 0.1µF µf 0.1µF OPTIONAL (Typical values are at = 3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) OPTICAL EYE (155Mbps) OPTICAL EYE (2.488Gbps) ELECTRICAL EYE (2.488Gbps) 117 MHz FILTER, PRBS 13nm FP LASER toc01 E R = 8.2dB, OC-48 FILTER PRBS, 13 FP LASER toc MHz FILTER PRBS toc03 C4 919ps/div 58ps/div 58ps/div 4
5 (Typical values are at = 3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) SUPPLY CURRENT (ma) SUPPLY CURRENT vs. TEMPERATURE EXCLUDES I BIAS AND I MOD toc05 GAIN (ma/a) BIAS CURRENT MONITOR GAIN vs. TEMPERATURE toc06 IMOD (map-p) MODULATION CURRENT vs. MODSET RESISTANCE (Z L = 15Ω) toc TEMPERATURE ( C) TEMPERATURE ( C) R MODSET (kω) IBIAS (ma) BIAS CURRENT vs. BIAS RESISTANCE toc08 EDGE TRANSITION TIME (ps) EDGE TRANSITION TIME vs. MODULATION AMPLITUDE FALL TIME RISE TIME toc R BIASSET (kω) I MOD (ma) 5
6 (Typical values are at = 3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) DETERMINISTIC JITTER vs. MODULATION CURRENT 2.7Gbps PRBS toc 0-5 DIFFERENTIAL S 11 vs. FREQUENCY toc DJ (psp-p) IS11I (db) I MOD (ma P-P ) FREQUENCY (GHz) PIN NAME FUNCTION 1, 4, 9, 12, V Supply Voltage. All pins must be connected to. 2 IN+ Noninverted Data Input 3 IN- Inverted Data Input 5 BIASSET 6 MODSET A current DAC, a voltage DAC, or a resistor, connected from this pin to ground, sets the desired bias current for the laser (see the Programming the Laser Bias Current section). A current DAC, a voltage DAC, or a resistor, connected from this pin to ground, sets the desired bias current for the laser (see the Programming the Laser Modulation Current section). 7 BC_MON Bias Current Monitor Output. Current out of this pin develops a ground-referenced voltage across an external resistor that is proportional to the bias current. 8 BIAS Laser Bias Current Output Noninverted Modulation Current Output. I MOD flows into this pin when input data is high. 11 Inverted Modulation Current Output. I MOD flows into this pin when input data is low. 13, 14 GND Ground 16 DIS Transmitter Disable, TTL. Laser output is disabled when DIS is asserted high or left unconnected. The laser output is enabled when this pin is asserted low. EP Exposed Pad Ground. Must be soldered to the circuit board ground for proper thermal and electrical performance (see the Exposed Pad Package section). 6
7 82pF 16kΩ 24kΩ DIS 7.2kΩ IN+ IN- BIAS x1 x85 x85 BC_MON 1.2V 1.2V BIASSET MODSET 7
8 12. V V I DAC MOD = 85 RSERIES V IMOD = 12. R 85 MODSET IBIAS = IBIASET 85 µ µ µ IMOD = IMODSET V V I DAC BIAS = 85 RSERIES V IBIAS = 12. R 85 BIASET 8
9 PACKAGE IN+ 0.65nH 0.11pF 82pF 16kΩ PACKAGE 0.43nH 0.43nH 0.11pF 0.11pF IN- 0.65nH 0.11pF 24kΩ µ µ µ 9
10 TOP VIEW DIS VCC GND GND TRANSISTOR COUNT: 1385 PROCESS: SiGe BIPOLAR SUBSTRATE CONNECTED TO GND DIE THICKNESS: 15 mils BIASSET MODSET BC_MON BIAS 9 THIN QFN (3mm x 3mm) THE EXPOSED PAD MUST BE CONNECTED TO GROUND FOR PROPER THERMAL AND ELECTRICAL PERFORMANCE IN+ (0,0) IN- GND DIS GND GND GND BIASSET MODSET BC_MON 1.55mm (61mils) BIAS IN MA3736 IN mm (45mils)
11 PAD NUMBER PAD NAME COORDINATES (µm) BP BP2 IN BP3 IN BP4 0 0 BP5 BIASSET BP6 MODSET BP7 BC_MON BP8 BIAS BP BP BP BP BP BP BP15 GND BP16 GND BP17 GND BP BP19 DIS BP GND X Y japan.maxim-ic.com/packages Maxim Integrated Products, 1 San Gabriel Drive, Sunnyvale, CA Maxim Integrated Products is a registered trademark of Maxim Integrated Products.
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LM5021 AC-DC Current Mode PWM Controller (jp)
LM5021 LM5021 AC-DC Current Mode PWM Controller Literature Number: JAJSAC6 LM5021 AC-DC PWM LM5021 (PWM) LM5021 (25 A) 1 ( ENERGY STAR CECP ) Hiccup (Hiccup ) 8 LM5021 100ns 1MHz AC-DC PWM 5021 LM Steve
LP2985 マイクロパワー150mA 低ノイズ、超低ドロップアウト・レギュレータ(SOT-23 およびmicro SMD パッケージ) 超低ESR 出力コンデンサが使用可能
VIP 150mA ESR 2985 LP 19980108 24060 DS100140 Sgm file from Marcom and made addition and changes. lm New datasheet from Chester Simpson; RRD to key in text added titles for all the new curves and some
LTC ホット･スワップ･コントローラ
LTC / GND CNECTOR CNECTOR R Q 0.00Ω MTB0N0V SENSE LTC GND C 0.µF R 0Ω FB C 0.µF.k % R.k % µp C 00µF V BACKPLANE PLUG-IN CARD TA0 LTC GND N PACKAGE -LEAD PDIP TOP VIEW SENSE FB S PACKAGE -LEAD PLASTIC SO
LM4040.fm
SC70 SOT-23 2.048V 2.500V 3.000V 4.096V 5.000V 8.192V 10.000V -2.5 60 A - 10.0 100 A 15mA 25 0.1 (A ) 1.2V 2 LM4041 LM4041 Precision Micropower Shunt Voltage Reference 19911220 24180 DS011323 Converted
LMC555 CMOSタイマ
CMOS 555 CMOS (SOIC MSOP MDIP) micro SMD (8 micro SMD) LM555 2 1 LMCMOS TM CMOS 19850925 24100 ds008669 Converted to nat2000 DTD added title to the 2 avos on the first page Edited for 2001 Databook fixed
AD8250 ：ゲイン設定可能（G＝1、2、5、10）な 10MHz、20V/μsのiCMOS®計装アンプ
G 2 5 MHz 2V/µs icmos AD825 MSOP 2 5 5 5V DC CMRR 98dB G ppm/.7µv/ G AC.% 65ns 2V/µs khz THD db CMRR 5kHz 8dB 8nV/ Hz G ma IN +IN DGD A A 2 6 5 LOGIC AD825 8 3 9 7 OUT 6288-25 2 5 G = G = 5 AD825 GΩ PGIA
TO-92 Plastic Package (Z) TO-252 (D-Pak) Bottom View Dual-In-Line Packages (N) Surface-Mount Package (M, MM) Front View 8-Lead LLP Top View 4 DAP Top
2951 LP 2950 LP 19850603 33200 24060 LP2950 LP2951 ( 75 A) ( 40mV 100mA 380mV) LP2950-5.0 D-Pak 3 TO-92 5V LP2951 8 (DIP) LLP 8 1 1 / 3V 3.3V 5V ( ) 1.24V 29V ( 0.5%) ( 0.05%) 11800 DS008546 fixed the
LTC 自己給電絶縁型コンパレータ
AC 120V TECCOR 4008L4 OR EUIVALENT NEUTRAL 2N2222 HEATER 25Ω 150Ω 1k 1N4004 2.5k 5W 5.6V R1 680k 390Ω 100µF LE 47k C1 0.01µF ZC ZC COMPARISON > R = R O e B (1/T 1/T O ) B = 3807 1µF THERM 30k YSI 44008
プログラミング可能なソフトスタート機能を備えた3.0A LDOリニア・レギュレータ
www.tij.co.jp TPS749xx µ µ SS = 0µ F V SS = 0.001µ F 1V/div SS = 0.0047µ F V IN IN PG V BIAS IN BIAS BIAS EN SS TPS74901 GND FB R 3 R 1 V 1V/div 0V 1.2V V EN SS R 2 Time (1ms/div) 1. 2. (1) V (2) TPS749xxyyy
AN15880A
DATA SHEET 品種名 パッケージコード QFH064-P-1414H 発行年月 : 2008 年 12 月 1 目次 概要.. 3 特長.. 3 用途.. 3 外形.. 3 構造...... 3 応用回路例.. 4 ブロック図.... 5 端子.. 6 絶対最大定格.. 8 動作電源電圧範囲.. 8 電気的特性. 9 電気的特性 ( 設計参考値 )... 10 技術資料.. 11 入出力部の回路図および端子機能の
DS90CP04 1.5 Gbps 4x4 LVDS Crosspoint Switch (jp)
1.5 Gbps 4x4 LVDS Crosspoint Switch Literature Number: JAJS984 1.5Gbps 4 4 LVDS 4 4 (LVDS) ( ) 4 4:1 4 1 MODE 4 42.5Gb/s LVDS 20010301 33020 23900 11800 ds200287 2007 12 Removed preliminary. Removed old
LM117/LM317A/LM317 可変型3 端子レギュレータ
LM117,LM317 LM117/LM317A/LM317 3-Terminal Adjustable Regulator Literature Number: JAJSBC1 LM317A/LM317 3 3 LM317A 3 LM317 1.2 37V 1.5A 3 IC 2 / IC AC IC 6 3 LM317 3-Terminal Adjustable Regulator LM117
LT GHz～3.8GHz高直線性アップコンバーティング・ミキサ
1.5GHz~3.GHz 高直線性アップコンバーティング ミキサ 特長 IP3.1GHz 7.3m m/hz (P OUT = 5m).1GHz. 1.5GHz 3.GHz* LO RFLO LO 1m 単一 3.3V 電源 5mm 5mm QFN パッケージ アプリケーション GSM/EDGE W-CDMA UMTS LTE および TD-SCDMA の基地局.GHz~3.5GHz の WiMAX
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NJM88/A ma.µf SOT-89- TO--(NJM88ADL) ESON6-H(NJM88AKH) NJM88U NJM88ADL NJM88AKH (...97mm) 7dB typ. (f=khz, Vo=V ) Vno=µVrms typ..µf (Vo.7V) Io(max.)=mA Vo±.%.8V typ. (Io=mA ) ON/OFF SOT-89-(NJM88U) / TO--(NJM88ADL)
5 11 3 1....1 2. 5...4 (1)...5...6...7...17...22 (2)...70...71...72...77...82 (3)...85...86...87...92...97 (4)...101...102...103...112...117 (5)...121...122...123...125...128 1. 10 Web Web WG 5 4 5 ²