186 100 40 12 Yoon, 2006. 1 2 IT 1997 IT GDP 1/3 IT IT 2/3 2003 2004 GDP 2 50 Kim Jung, 2005. 12 IT 1999 17.7 IMF 2004 IT 20.4 29.4 3 2005. 12. 26 IT CDMA LCD TV 4 1995 LG 7 IT 5 Lee, 2003 1996 CDMA 5 2006 LG
187 3 5 IT LCD TV 2004 47 15 2006 6 IT 2005 7 1980 8 2002 5 1995 9 IT Porter 10 Takeuchi, 2002 IT IT SAMSUNG 1 1980 1995 17.7 2
188 9 2 30 2006 1970 1983 64 K DRAM 6 16 M DRAM 1992 64 M DRAM 1986 1993 1995 LG 7 2000 1986 1993 11 1992 2000 3 2 1960 Fairchild Signetics Motorola 1969 Anam 1974 30 2006 LCD, CDMA 12 Hong, 2004 1965 Komy
189 1966 1967 1969 70 1974 1 KEMKO ICII 50 3 1960 1970 1980 1980 Hong, 2004 70 1970 Anam 1969 1969 Anam 1969 1969 1976 8 95 1976
190 9 2 4 140 100 49 1960 1974 1975 50 1977 LG 1979 1970 Hong, 2004 50 80 1980 1970 1980 1970 Hong, 2004 5 5 1970 1980 1980
191 LG 1986 4 VSLI 1990 1991 7 30 16 M DRAM 1992 DRAM 1 1990 2000 DRAM LG 2001 Hynix 2002 Anam 2005 LG IBM 1986 1997 1986 4 13
192 9 2 DRAM ETRI LG mega carrier 40 60 bottleneck LG VLSI 1986 4 VLSI arms-
193 length regulation ETRI bottleneck 2005 1970 KDI 1 GNP 1 50 1982 1 50 ETRI VLSI
194 9 2 2005 90 Porter Takeuchi 2002 2000 DRAM LCD 2005 Non-memory Flatform 2006 1 IT SoC IT-SoC SoC ETRI MIC 2006 5 KIPA IT-SoC ETRI IT SoC SoC SoC 14 SoC SoC ETRI IP
195 SAMSUNG 1974 12 50 1977 12 1978 3 1978 6 Daebandong 1980 1981 IC 1982 Buchon 27 ITT NEC NEC 4 1982 10 ITT 1982 64 K DRAM 64 K DRAM 1983 5 1983 12 1
196 9 2 256 K DRAM 3 1984 3 64 K DRAM 256 K DRAM 1984 3 1984 10 DRAM 16 K EEPROM VCR IC IC 1986 7 1 MDRAM VLSI 3 256 K DRAM 1 6 2 64 K DRAM 1984 DRAM 1987 DRAM 256 K DRAM 1987 256 K DRAM 1MDRAM 256 K DRAM 1MDRAM 1986 1987 2,862 71 1988 6,700 134 1988 1,600 1988 11 1989 11 4MDRAM 1990 100 1990 8 16 M DRAM 16 M DRAM 1991 9 64 M DRAM 1992 8 1988 DRAM SRAM
197 1990 1 MVideoRAM 2MVideoRAM 1991 16 M Mask ROM 32 M Mask ROM 1992 DRAM 1 1993 DRAM SAMUSUNG DRAM DRAM 2 64 KDRAM 4 16 MDRAM 16 M DRAM 64 MDRAM 16 MDRAM 2006 16 MDRAM 16 M DRAM 1989 4 1 4 1990 7 1990 7 16 M DRAM 16 M DRAM HP 16 M DRAM 3 HP HP 2 SAMUSUNG DRAM 64 K 256 K 1 M 4 M 16 M 64 M 256 M 1 G 4 G 84.3 85.7 86.7 88.5 89.10 92.8 94.8 96.10 2001 WON 7.3 11.3 235 508 617 1200 1200 2200 10 9 15 20 26 26 30 29 4 3 2 0.5 µm 1.1 0.7 0.5 0.4 0.35 0.26 0.18 0.13 2 8 32 130 520 2100 8400 33600 *1 10 6 m
198 9 2 3 2005 32 33 LCD 17 MP 3 11 7 LCD 2005 3 2003 2006 3 100 WON 2006 2005 2004 2003 5897 5746 5763 4358 1908 32 1833 32 1822 32 1271 29 LCD 1170 20 971 17 868 15 519 12 1824 31 1882 33 1893 33 1420 33 630 11 648 11 802 14 771 18 309 5 338 6 325 6 340 8 693 12 806 14 1201 20.9 719 16.5 503 26 546 30 747 62.2 361 50.2 LCD 65 6 73 8 188 16 89 12 174 10 231 12 281 23.4 270 38 37 6 31 5 3 0.2 14 2 17 6 9 3 5 0.4 11 2 922 16 887 15 1312 23 690 16 793 13 764 13 1078 19 596 14
199 2003 2004 37 23 50 62 2005 2006 31 2005 11 Micron 8 DRAM LG 1997 LG 2 1 Hong, 2004 50 2000 2006 DRAM DRAM NEC 2004 LG 3 13 1
200 9 2 4 DRAM 15 2000 2001 2002 2003 2004 2005 2006 7 9 21.1 27 32.2 29 30.9 31.8 27.8 18.9 19.1 18.5 18.9 16.3 16.3 16.9 17.2 14.5 12.8 15.4 15.8 15.3 15.8 8.5 9.7 11.7 14.8 13.3 10.6 NEC 6.7 8.5 5.5 4.4 6 10.2 11 31 1 DRAM DRAM 14 31 SRAM 11 11 35 1 NAND,FLASH MCP 1 2 SOURCE : SAMSUNG 4 2006
201 Hong 2004 2001 2 16 2005 2000 2006 4 17 1 1990 R&D 1 M 3,000 2 R&D 8 1993 5 8 3
202 9 2 2005 6 8 8 1990 1991 DRAM 8 1993 6 DRAM 8 IBM 2 1993 1 8 8 1 8 6 8 1.8 6 1 100 1 180 6 8 1.4 1.8 1.4 1.2 0.6 12 12 1.7 2.3 1.3 2 2001 12 DRAM PLC Product Life Cycle PLC 1982 1984 64 K DRAM 1985 4 1 4 80
203 LG Daewoo LG 1987 1MDRAM 256 K DRAM 256 K DRAM 1990 1986 2,000 1986 1,200 1.7 Task Force yield 2001 80 DB
204 9 2 1994 MP Maintenance Prevention concurrent development 64 M DRAM 3 256 M DRAM 0.13 µm 0.11 µm 59 1988 4MDRAM 4 16 M DRAM 5 16 M DRAM 2005 1980 1988 6 16 M DRAM, 64 M DRAM, SRAM NEC
205 4MDRAM 1992 DRAM SDRAM DRAM 4 SDRAM DDR DRAM SDRAM DDR DRAM SDRAM 2 DRAM 8 DRAM Rambus DRAM DDR DRAM Rambus DRAM DDR DRAM 1998 64 M Rambus DRAM DRAM DRAM 30 256 M PLC 2
206 9 2 DRAM SRAM, DDR DRAM JEDEC,MIPI,MMCA LCD 5 LCD Yoon, Jongrok Inter-Industry Collaboration TTA Journal, Vol. 103, 2006. 2, pp. 8 9. Kim Jungeon Jung Hyunjun IT KISDI Issue REPORT, 2005. 12. 5. IT 2005. 12. 26. Hong Sunggul 2004, pp. 47 113. Lee, Eunkyong. Socio-economic Impacts of Successful R & D Results in Korea Ministry of Science and Technology, Policy Study 2002 23, April 2003. First Mover Advantage 2006. IT 2005. 2002. p. 5. 1995. p. 5 2002. p. 5 2002. 3 NTT 2000. Hong Sunggul 2004, pp. 47 113. 2005. http : //mic.news.go.kr
207 2000 2004 : Gartner/2005 : Dataquest/2006 7 9 Eyesearch ez-book, 2005. Moore s Law 2 18 2 R &D