2013-04-03
1 Chapter 1 (1) (2) JIS IEC, / 1.1 (1) (2) (3). 1. (passive element): 2. (active element): MOS FET 3. (mechanical element): 1.2 Fig.1.1,Fig.1.2 Fig.1.1 AD Fig.1.2 Fig.1.1 Fig.1.2
Chapter 1 2 Fig. 1.1 Fig. 1.2 1.3 JIS (JIS C 0617) IEC (IEC C 60617),,,
Chapter 1 3 Print Wiring Board:PWB) CAD CAD 1.4 0V
4 Chapter 2 2.1 Fig.2.1(a) Fig.2.1(b) Fig.2.1(c) Fig. 2.1 (a), (b), (c), (d) Fig. 2.2 T (a), (b) (c) Fig. 2.3 Fig.2.1(d) Fig.2.2(b) T
Chapter 2 5 Fig.2.2(a) Fig.2.2(c) Fig.2.3(a),(b) 2.1.1 Fig.2.4 Fig.2.5 Fig.2.4 LAN Fig. 2.4 Fig.2.5 Fig. 2.5 Fig.2.5
6 Chapter 3 3.1 ( ) ( ) Fig.3.1(a) Fig.3.2 Fig. 3.1 (a), (b)(a) Fig. 3.2 (a), (b), (c) Fig.3.2(b)
Chapter 3 7 Fig.3.2(c) Fig.3.2(a) Fig.3.1(a) Fig.3.1(b) Fig.3.1(a) 3.1.1 3.1.2 / / Fig. 3.3 ( ) (a) (Analog Ground), (b) (Digital Ground), (c) (Power Ground) Fig.3.3(a),(b),(c).A.G.,D.G,P.G
Chapter 3 8 3.2 Fig.3.4 Fig.1.1 Fig.3.4(a),(b),(c) Fig.3.4(d) +5V P5A1 P6D1-15V Fig. 3.4 (a)+5v, (b)-15v, (c)(d) Fig.3.4(a)(b) Fig.3.4(c)(d) 3.2.1 Fig.3.4(a) Fig.3.4(b) 3.3 Fig.3.5(a) 2 2 1 2 Fig.3.6(a)
Chapter 3 9 Fig. 3.5 (1) (a) (b) (c) Fig.3.5(b) Fig.3.5(c) Fig.3.6(b) Fig.3.6(c) Fig.3.6(d) + ー Fig. 3.6 2 (a), (b) (c) (d) Fig.3.7(a) 1 Fig.3.7(b),(c) Fig.3.5(b),(c) (Fig.3.8(a)) (Fig.3.8(b))
Chapter 3 10 Fig. 3.7 (a), (b), (c) Fig. 3.8 (a), (b) 3.3.1 0V 3.4 ( ) 4 VCVS (Voltage Controlled Voltage Source) VCCS (Voltage Controlled Current Source) CCVS (Current Controlled Voltage Source) CCCS (Current Controlled Current Source) Fig.3.9(a),(b),Fig.3.10(a),(b) (BJT) MOS FET VCCS BJT Fig.3.11(a) VCCS MOS FET Fig.3.11(b) Fig.3.11(a) BJT gm
Chapter 3 11 Fig. 3.9 (a) (Voltage Controlled Voltage Source), (b) (Voltage Controlled Current Source) Fig. 3.10 (a) (Current Controlled Voltage Source), (b) (Current Controlled Current Source) VCCS Fig.3.11(b) MOS FET gm B C G D E S Fig. 3.11 (a)bjt, (b)mos FET 3.4.1 ( ) 3.5 Fig.3.12(a)(b) Fig.3.12(a)
Chapter 3 12 1.5 Fig.3.12(b)! "! " Fig. 3.12 (a) (b), (c)op (d)(c) Fig.3.12(c)(d) Fig.3.12(a) + - Fig.3.12(b) Fig.3.12(a),(b),(c) Fig.3.12(d) Fig.3.12(c),(d) Fig.1.1 Fig.3.12(c),(d) 3.5.1 Fig.3.12(a) Fig.3.12(b)
13 Chapter 4 4.1 Fig.4.1(a) (e) Fig.4.2(a) (e) Fig.4.1(a) (e) Fig. 4.1 (a) (b) (c) (d) (e) Fig.4.1 (b) (c) Fig.4.1 (d) (e) 2
Chapter 4 14 2 (Trimmer) Fig. 4.2 (a) (b) (c) (d) (e) Fig.4.2(a) (e) Fig.4.2(a) 4.2 ( ) ( ) 2 (Capacitor) Fig.4.3(a) 1 3 4 2
Chapter 4 15 Fig. 4.3 (a) (b) (c) (d) (e) ( ) 1 3 4 2 Fig.4.3(b) Fig.4.3(e) Fig.4.3(c) (d) Fig.4.3(c) Fig.4.3(d) 4.3 Fig.4.4 (a) (c) Fig.4.5 3 (2 ) Fig. 4.4 (a) (b) (c) ( ) (Fig.4.5(b)) (Fig.4.5(c)) Fig.4.4(b) (Fig.4.4(c),Fig.4.5(d)) 2 1
Chapter 4 16 Fig. 4.5 (a) 3 (b) (c) (d) Fig.4.6 Fig. 4.6
17 Chapter 5 5.1 Fig.5.1 (c),(d) PN P (Anode) N (Casode) (Fig.5.1(a)) K Fig.5.1(a) PN A P N k Fig. 5.1 (a) (b) (c) (d) ( ) P N Fig.5.1(b) Fig.5.1(c)(d) 5.1.1 PN PN P N (Fig.5.2) BJT PN (BJT ) Fig.5.2(b) (c)
Chapter 5 18 Fig.5.2(a) P N Fig. 5.2 PN (a) P N (b) (c) 5.1.2 Fig.5.3 Fig.5.5 Fig. 5.3 (a) Z), (b) ( S), (c) 2 Fig.5.3(a) Z (Fig.5.4(a)) Fig.5.3(b) N S Fig.5.4(b) Fig.5.3(c) (Varicap) 2 Variable Capacitance Diode (varactor) Fig. 5.4 (a), (b), (c) Fig.5.4(c) (Esaki diode) (tunnel diode) 1957 1973
Chapter 5 19 Fig. 5.5 (a) (LED) (LD) (b) APD (c) Fig.5.5(a) LED LED LD Fig.5.5(b) LED LD APD(Avalanche Photodiode) LED,LD APD Fig.5.5(c) (CRD) FET FET 5.2 (BJT) NPN (Fig.5.6) PNP (Fig.5.7) PN Fig.5.6 b 5.7 b Fig.5.6(b) 5.7(b) Fig.5.6(c) 5.7(c) Fig.5.6(b) 5.7(b) Fig.5.8(a),(b) Fig.5.9(a) Fig.5.9(b)
Chapter 5 20 E B C N P N B C E Fig. 5.6 NPN (a) (b). (c) E B C P N P Fig. 5.7 PNP (a) (b). (c) Fig. 5.8 BJT (a)npn (b)pnp (Multi-Emitter Transistor). Fig. 5.9 (a) (NPN ) (b) (NPN ) 5.3 FET(JFET) PN PN FET N (Fig.5.10) P (Fig.5.11) Fig.5.10(b) Fig.5.11(b) PN
Chapter 5 21 Fig.5.10(c) Fig.5.11(c) PN FET 0 (Depletion) D N G P S G D S Fig. 5.10 FET N (a) (b) PN (c) PN. G D P N S Fig. 5.11 FET P (a) (b) PN (c) PN. 5.4 MOS FET (S i O 2 ) MOS (M) (O) (S) (Fig.5.12 Fig.5.13) LSI sub,b MOS FET 0 (Emhancement) 0 (Depletion) Fig.5.12(b) 5.13 (b) P N P Fig.5.12(c) 5.13 (c) MOS FET
Chapter 5 22 S G D n P n B Fig. 5.12 MOS FET N (a) (b)(c). LSI. S G D p N p B Fig. 5.13 MOS FET P (a) (b)(c). LSI. Dep. Fig.5.14(a),(b) Fig.5.12(b),5.13(b) Fig.5.15(a),(b) PN Fig.5.16(a),(b) Fig.5.17(a),(b) N,P Fig. 5.14 MOS FET 2 5.12,5.13 (a)n (b)p
Chapter 5 23 Fig. 5.15 MOS FET 3 N,P (a)n (b)p Fig. 5.16 MOS FET 4 5.15 (a)n (b)p Fig. 5.17 MOS FET 5 N,P 5.15,5.16 (a)n (b)p 5.4.1 MOS FET Fig.5.18,5.19,5.20 MOS FET MOS FET Fig.5.18(a),(b) Fig.5.19(a),(b) MOS FET Fig.5.19(a),(b)
Chapter 5 24 Fig. 5.18 MOS FET (a)n (b)p Fig. 5.19 MOS FET (a)n (b)p Fig. 5.20 MOS FET 5.19 (a)n (b)p 5.5 MOS FET " $% '! #! $&! ( Fig. 5.21 (a) (Thyristor,SCR), (b) ( TRIAC), (c) (IGBT : Insulated Gated Bipolar Transistor) Fig.5.21(a) (Silicon Controlled Rectifier)
Chapter 5 25 Fig.5.21(b) 50Hz 60Hz) Fig.5.21(c) (IGBT : Insulated Gated Bipolar Transistor) MOS FET