動化 V ns 9)10) Grezaud 15ns 10) DC VSC (Voltage Source Converter) SiC HEV SiC-MOSFET FWD SiC-SBD SiC-MOSFET FET DENSO TECHNICAL REVIEW Vol 電 FW

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1 デッドタイム制御機能内蔵 * SiC MOSFET 用ゲートドライバの開発 Development of the Dead Time Controlled Gate Driver for SiC MOSFET 丹羽章雅 Akimasa NIWA 今澤孝則 Takanori IMAZAWA 山本昌弘 Masahiro YAMAMOTO 笹谷卓也 Takanari SASAYA 磯部高範 Takanori ISOBE 只野博 Hiroshi TADANO In comparison with Silicon IGBT, Silicon Carbide (SiC) MOSFET is expected to reduce switching loss and conduction loss, as well as to remove external free-wheeling diodes. However, its body diode has comparatively high forward voltage, therefore, the diode conduction loss generated during dead time increases. This work proposes a simple dead time controller integrated in an isolated gate driver in order to reduce the diode conduction loss. The proposed method can shorten the diode conduction time within 0.1µs. The experimental results showed 1 % higher efficiency of the converter with the proposed dead time controller compared to that without dead time controller, and the efficiency was the similar level as when a SiC Schottky Barrier Diode was used as free-wheeling diodes. Key words : SiC-MOSFET, body diode, dead time, gate driver 1. はじめに HEV Si- IGBT (Insulated Gate Bipolar Transistor) Si SiC 1 2 SiC-MOSFET SiC-MOSFET Fuel Cell Vehicle FCV SiC 3 4 SiC-MOSFET Si-IGBT Free Wheeling Diode: FWD SiC SiC FWD SiC 5)-12) 5)-8) HEV *( 一社 ) 電気学会の了承を得て, 論文誌 D Vol.136 No.2 P および論文誌 C Vol.137 No.2 P より一部加筆して転載 57

1 HEV 1 3 PWM SiC-MOSFET MOSFET Fig. 2 SiC-MOSFET SiC-MOSFET 6mm SBD SiC-MOSFET SiC-SBD 4 SiC pn 2.5V Fig.

2 動化 V ns 9)10) Grezaud 15ns 10) DC VSC (Voltage Source Converter) SiC HEV SiC-MOSFET FWD SiC-SBD SiC-MOSFET FET DENSO TECHNICAL REVIEW Vol 電 FWD Fig. 1 Schematic of SiC inverter system 2. デッドタイムに関する問題 SiC-MOSFET HEV Fig. 1 HEV 1 3 PWM SiC-MOSFET MOSFET Fig. 2 SiC-MOSFET SiC-MOSFET 6mm SBD SiC-MOSFET SiC-SBD 4 SiC pn 2.5V Fig. 2 Characteristics of SiC MOSFET intrinsic bodydiode Fig. 3 SiC-MOSFET and diode losses FWD SiC-SBD Fig. 3 SiC-MOSFET 100 khz 58

提案する SiC-MOSFET 用ゲートドライバ 3.1 デッドタイム短縮手法 Fig.

3 Fig. 4 Circuit schematic of the proposed gate driver t DT 5 µs 1.5 µs MOSFET FWD SiC-SBD FWD 55 W SiC-SBD 1/50 0.1µs 3. 提案する SiC-MOSFET 用ゲートドライバ 3.1 デッドタイム短縮手法 Fig. 4 SiC-MOSFET FET VDS FET FET 13) FET SiC-MOSFET Fig. 5 FET SS Fig. 5 SiC MOSFET FET FET MSH SS CMPH V DDH INH OUTH SWH V DS Fig. 6 MOSFET MMH V DS MMH 59

4 動化 FET MSH VCMPH VDDH V REF MMH VDS SWL FET t1 INH DENSO TECHNICAL REVIEW Vol 電 FET 12) FET SiC-MOSFET SiC-MOSFET FET FET VDS FET 4. 安定動作のための設計と考察 Fig. 6 Proposed dead time shortening operation 3.2 提案法の特長 11) FET 4.1 不安定動作メカニズム VDSH FET MSH Fig. 7 MOSFET V CMPH V DDH V DSH M SH t2 V CMPH t1 V CMPH V CMPH 60

Fig. 8 FET FET MSH CGSH_S CDSH_S CGDH_S CMPH CCMPH RG SiC-MOSFET RS MSH VDSH MSH CDSH_S ICDSH_S CCMPH CGSH_S VCMPH 1 1 Fig. 7 Unstable operation due to parasitic current 4.

5 Fig. 8 FET FET MSH CGSH_S CDSH_S CGDH_S CMPH CCMPH RG SiC-MOSFET RS MSH VDSH MSH CDSH_S ICDSH_S CCMPH CGSH_S VCMPH 1 1 Fig. 7 Unstable operation due to parasitic current 4.2 過渡解析 FET SiC-MOSFET FET FET 13) FET + 5V Fig. 9 SiC-MOSFET FET FET 1/10,000 CDSH_S Fig. 9 pf ICDSH_S ma SiC- MOSFET IRS VCMPH IRS VCMPH t2 - t1 IRS = 0 Fig. 8 Equivalent circuit around the current sense FET Fig. 9 CDS VDS characteristics of SiC MOSFET (1) VCMPH 61

6 動化FET MSH CMPH FET 4.3 過渡特性の検証と考察 SiC-MOSFET CMPH VCMPH VCMPH FET VDS 500 V Fig. 10 VCMPH VDSH 500 V 0 V C CMPH VCMPH Fig. 11 VCMPH CCMPH (1) FET V DS Fig kV/µs VCMPH 3V (1) Fig. 11 DENSO TECHNICAL REVIEW Vol Comparing with theoretical value 電 CCMPH VCMPH CCMPH TCMPH CCMPH Fig. 12 CCMPH 1500 pf 80 ns VCMPH FET CDSH_S (1) FET FET Fig. 10 Measured waveforms of V DSH and V CMPH Fig. 12 Comparator response time T CMPL -C CMPL 62

7 5. ゲートドライバ試作および評価結果 Fig. 13 SiC-MOSFET SiC-MOSFET 2in1 2 SiC- MOSFET 2 0.5µm BiCDMOS 7 mm 4 mm DTC 0.8mm 2 SiC-MOSFET Fig. 14 Fig A 20A 30A V GSL V DSH 0V V GSH 80 ns 84 ns 30A 20kV/µs Fig. 14 Experimental environment Fig. 13 Prototyped gate driver and SiC MOSFET module Fig. 15 Experimental waveforms 63

8 動化 P.G. SiC SiC Fig. 16 Power conversion efficiency of boost converter 1.5µs INH/INL DTC on DTC off 250 V 500 V 100 khz Fig. 16 SiC-SBD 6. おわりに SiC-MOSFET 0.1µs FWD SiC-SBD SiC DENSO TECHNICAL REVIEW Vol SiC Vol. 16 (2011), pp K. Hamada, et al.: SiC-Emerging Power Device Technology for Next-Generation Electrically Powered Environmentally Friendly Vehicles, IEEE Trans. ED, Vol. 62, No. 2 (2015), pp toyota.co.jp/en/detail/ co.jp/news/2016/ html 5 J. S. Yu, et al.: Digital dead-time control for an integrated tri-mode buck-boost DC-DC converter, in Proc. ECCE Asia 電参考文献 (2015), pp S. Lee, et al.: Accurate Dead-Time Control for Synchronous Buck Converter With Fast Error Sensing Circuits, IEEE Trans. Cir. And Sys-I, vol. 60, no. 11 (2013), pp W. Yan, et al.: Dynamic dead-time controller for synchronous buck DC-DC converters, IEEE Electron. Letters, vol. 46, no. 2 (2010), pp S. Zhen, et al.: A High Efficiency Synchronous Buck Converter with Adaptive Dead Time Control for Dynamic Voltage Scaling Applications, in Proc. IEEE/IFIP 19th International Conference on VLSI and System-on-Chip (2011), pp Z. Zhang, et al.: Dead-Time Optimization of SiC Devices for Voltage Source Converter, in Proc. IEEE APEC (2015), pp R. Grezaud, et al.: A Gate Driver With Integrated Deadtime Controller, IEEE Trans. Power Electronics, vol. 31, no. 12 (2016), pp PWM, A. Furukawa, et al.: Low On-Resistance 1.2kV 4H-SiC MOSFETs Integrated with Current Sensor, in Proc. ISPSD (2011), pp

9 著者丹羽章雅にわあきまさ先端研究 3 部博士 ( 工学 ) SiC 用ゲートドライバはじめ半導体回路の研究に従事今澤孝則いまざわたかのり先端研究 3 部 SiC 用駆動回路およびモジュールの研究に従事山本昌弘やまもとまさひろ先端研究 3 部 SiC 用ゲートドライバはじめ半導体回路の研究に従事笹谷卓也ささやたかなり先端研究 3 部パワー半導体の駆動回路から車載電力変換器にわたる研究開発に従事磯部高範いそべたかのり筑波大学数理物質系准教授博士 ( 工学 ) 電力システム, 無効電力補償装置およびソフトスイッチング回路の研究に従事只野博ただのひろし筑波大学数理物質系教授工学博士新型パワーデバイスを用いた電力変換回路の研究に従事 65

D IEEJ Transactions on Industry Applications Vol.133 No.3 pp DOI: /ieejias DC-DC Principle of Surge Voltage of a Rectifier in I

D IEEJ Transactions on Industry Applications Vol.133 No.3 pp.350 359 DOI: 10.1541/ieejias.133.350 DC-DC Principle of Surge Voltage of a Rectifier in Isolated DC-DC Converters and Snubber Circuit Design