NO.JA-71-6112 CMOS IC IC Nch CMOS 2 Rx5VL TO-92 SOT-89 SOT-23-3 SOT-23-5 SC-82AB SON1612-6 6 TYP..8µA (=1.5V).7V 1.V ().9V 6.V.1V ±2.% TYP. ±1ppm/ C Nch CMOS 2 6 TO-92 SOT-89 SOT-23-3 SOT-23-5 SC-82AB SON1612-6 1
2 Nch CMOS Vref Vref Nch ( ) tplh VSS VSS () +VDET -VDET (R3111XXXXA/C ) DD DD DD Vref Vref Vref Vref + -
入力電圧 (V DD ) 解除電圧 (+V DET ) 検出電圧 (-V DET) 最低動作電圧 V DDL 出力電圧 (V) V DDL tp LH tphl tplh, PHL R3111XXXXB( ) tplh PHL 1. Nch 47kΩ 5V.7V (+VDET)+2.V 2.5V 2. CMOS.7V (+VDET)+2.V/2 Nch R3111XXXXA) CMOS (R3111XXXXC) 3
+V DET +2.V Input Voltage (V DD ).7V Output Voltage 5.V 2.5V GN tp LH tp HL Nch Open Drain Output (R3111XXXXB) xxxx-xx a b c d e a b c d e E TO-92 Q SC-82AB H SOT-89 N SOT-23-5/SOT-23-3 D:SON1612-6 ( VDET) VDET.9V 6.V.1V 1 SOT-23-3 2 SOT -23-3 A Nch C CMOS B : Nch () TO-92 TZ SOT-89 T1 SOT-23-3 SOT-23-5 SC-82AB SON1612-6 TR TO-92 C 4
TO-92 SOT-89 SOT-23-3 SOT-23-5 SC-82AB SON1612-6 3 5 4 4 3 654 (mark side) (mark side) 1 2 3 (mark side) 1 2 (mark side) 1 2 3 (mark side) 1 2 123 1 2 3 TO-92 SOT-89 SOT-23-3 SOT-23-5 SC-82AB 1 1 1 1 1 2 2 2 2 2 3 3 3 3 3 NC 4 NC 4 5 NC SON1612-6 1 2 3 4 NC 5 6 NC 5
12 V V1 (CMOS) VSS.3 +.3 V V2 (Nch) VSS.3 12 V I 7 ma PD 1 1 3 mw PD 2 2 15 mw PD 3 3 5 W Topt 4 85 C Tstg 55 125 C Tsolder 26 C 1 1) 1 SOT-89 TO-92 2) 2SOT-23-3 SOT-23-5 SC-82AB 3) 3 SON1612-6 ( m/s) FR-4 (2) 4mm 4mm t1.6mm 5% 6
9xA/C MIN. TYP. MAX. VDET.882.9.918 V VHYS.27.45.63 V ISS =.8V 2.9V H 1 V.55.7 L 1 4 C Topt 85 C.65.8 I Nch VDS=.5V,=.7V VDS=.5V,=.85V.1.5.8.9.5.5 Pch VDS= 2.1V,=4.5V 1. 2. tplh 2 1 µs VDET/ T 4 C Topt 85 C ±1 ppm/ C 2.4 2.7 µa V ma ma 18xA/C MIN. TYP. MAX. VDET 1.764 1.8 1.836 V VHYS.54.9.126 V ISS = 1.7V 3.8V H 1 V.55.7 L 1 4 C Topt 85 C.65.8 I Nch VDS=.5V,=.7V VDS=.5V,=.85V.1 1..8 1..5 2. Pch VDS= 2.1V,=4.5V 1. 2. tplh 2 1 µs VDET/ T 4 C Topt 85 C ±1 ppm/ C 2.4 3. µa V ma ma 7
27xA/C MIN. TYP. MAX. VDET 2.646 2.7 2.754 V VHYS.81.135.189 V ISS = 2.6V 4.7V H 1 V.55.7 L 1 4 C Topt 85 C.65.8 I Nch VDS=.5V,=.7V VDS=.5V,=1.5V.1 1..9 1.1.5 2. Pch VDS= 2.1V,=4.5V 1. 2. tplh 2 1 µs VDET/ T 4 C Topt 85 C ±1 ppm/ C 2.7 3.3 µa V ma ma 36xA/C MIN. TYP. MAX. VDET 3.528 3.6 3.672 V VHYS.18.18.252 V ISS = 3.47V 5.6V H 1 V.55.7 L 1 4 C Topt 85 C.65.8 I Nch VDS=.5V,=.7V VDS=.5V,=1.5V.1 1. 1. 1.2.5 2. Pch VDS= 2.1V,=4.5V 1. 2. tplh 2 1 µs VDET/ T 4 C Topt 85 C ±1 ppm/ C 3. 3.6 µa V ma ma 8
45xA/C MIN. TYP. MAX. VDET 4.41 4.5 4.59 V VHYS.135.225.315 V ISS = 4.34V 6.5V H 1 V.55.7 L 1 4 C Topt 85 C.65.8 I Nch VDS=.5V,=.7V VDS=.5V,=1.5V.1 1. 1.1 1.3.5 2. Pch VDS= 2.1V,=8.V 1.5 3. tplh 2 1 µs VDET/ T 4 C Topt 85 C ±1 ppm/ C 3.3 3.9 µa V ma ma 54xA/C MIN. TYP. MAX. VDET 5.292 5.4 5.58 V VHYS.162.27.378 V ISS = 5.2V 7.4V H 1 V.55.7 L 1 4 C Topt 85 C.65.8 I Nch VDS=.5V,=.7V VDS=.5V,=1.5V.1 1. 1.2 1.4.5 2. Pch VDS= 2.1V,=8.V 1.5 3. tplh 2 1 µs VDET/ T 4 C Topt 85 C ±1 ppm/ C 3.6 4.2 µa V ma ma 9
R3111Q231B MIN. TYP. MAX. VDET 2.254 2.3 2.346 V VHYS.69.115.161 V ISS =2.2V 4.3V H 1 V.55.7 L 1 4 C < = Topt < = 85 C.65.8.9 1.1 2.7 3.3 µa V I R3111Q441B MIN. TYP. MAX. VDET 4.312 4.4 4.488 V VHYS.132.22.38 V ISS Nch VDS=.5V,=3.V = 4.24V 6.4V 1 ma PLH 1 µs VDET/ T 2 4 C < = Topt < = 85 C ±1 ppm/ C H 1 V.55.7 L 1 4 C < = Topt < = 85 C.65.8 1.1 1.3 3.3 3.9 µa V I Nch VDS=.5V, =5.5V 18 ma tplh 1 µs VDET/ T 2 4 C < = Topt < = 85 C ±1 ppm/ C 1.1V Nch47kΩ 5.V 2 CMOS.7V (+VDET)+2.V /2 Nch47kΩ5.V.7V (+VDET)+2.V 2.5V 1
9x 6x 1 2 VDET[V] VHYS[V] ISS1[µA] ISS2[µA] MIN. TYP. MAX. MIN. TYP. MAX. TYP. MAX. TYP. MAX. 9xx.882.9.918.27.45.63.9 2.7 1xx.98 1. 1.2.3.5.7 11xx 1.78 1.1 1.122.33.55.77 12xx 1.176 1.2 1.224.36.6.84 13xx 1.274 1.3 1.326.39.65.91 14xx 1.372 1.4 1.428.42.7.98 15xx 1.47 1.5 1.53.45.75.15 16xx 1.568 1.6 1.632.48.8.112 17xx 1.666 1.7 1.734.51.85.119 18xx 1.764 1.8 1.836.54.9.126 19xx 1.862 1.9 1.938.57.95.133 2xx 1.96 2. 2.4.6.1.14 21xx 2.58 2.1 2.142.63.15.147 22xx 2.156 2.2 2.244.66.11.154 23xx 2.254 2.3 2.346.69.115.161 24xx 2.352 2.4 2.448.72.12.168 25xx 2.45 2.5 2.55.75.125.175 26xx 2.548 2.6 2.652.78.13.182 27xx 2.646 2.7 2.754.81.135.189 28xx 2.744 2.8 2.856.84.14.196 29xx 2.842 2.9 2.958.87.145.23 3xx 2.94 3. 3.6.9.15.21 31xx 3.38 3.1 3.162.93.155.217 32xx 3.136 3.2 3.264.96.16.224 33xx 3.234 3.3 3.366.99.165.231 34xx 3.332 3.4 3.468.12.17.238 35xx 3.43 3.5 3.57.15.175.245 36xx 3.528 3.6 3.672.18.18.252 37xx 3.626 3.7 3.774.111.185.259 38xx 3.724 3.8 3.876.114.19.266 39xx 3.822 3.9 3.978.117.195.273 4xx 3.92 4. 4.8.12.2.28 41xx 4.18 4.1 4.182.123.25.287 42xx 4.116 4.2 4.284.126.21.294 43xx 4.214 4.3 4.386.129.215.31 44xx 4.312 4.4 4.488.132.22.38 45xx 4.41 4.5 4.59.135.225.315 46xx 4.58 4.6 4.692.138.23.322 47xx 4.66 4.7 4.794.141.235.329 48xx 4.74 4.8 4.896.144.24.336 49xx 4.82 4.9 4.998.147.245.343 5xx 4.9 5. 5.1.15.25.35 51xx 4.998 5.1 5.22.153.255.357 52xx 5.96 5.2 5.34.156.26.364 53xx 5.194 5.3 5.46.159.265.371 54xx 5.292 5.4 5.58.162.27.378 55xx 5.39 5.5 5.61.165.275.385 56xx 5.488 5.6 5.712.168.28.392 57xx 5.586 5.7 5.814.171.285.399 58xx 5.684 5.8 5.916.174.29.46 59xx 5.782 5.9 6.18.177.295.413 6xx 5.88 6. 6.12.18.3.42 = ( VDET).1V = ( VDET).13V = ( VDET).16V = ( VDET).2V.8 2.4 1. 3..9 2.7 1.1 3.3 1. 3. ( VDET) 1.2 3.6 +2.V 1.1 3.3 1.3 3.9 1.2 3.6 = 1.4 4.2 1 CMOS.7V (+VDET)+2.V 5% Nch 47kΩ 5V.7V (+VDET)+2.V 5% 2.1VNch47kΩ 5V 1 2 4 C Topt 85 C 11
1 2 I1[mA] I2[mA] tplh[µs] L[V] VDET/ T[ppm/ C] MIN. TYP. MIN. TYP. MAX. TYP. MAX. =.85V.5.5 TYP. = 1.V.2 1. 2 2 Nch VDS=.5V =.7V.1.5 Nch VDS=.5V = 1.5V 1. 2. 1 1 1.55 2.65 1.7 2.8 4 C Topt 85 C ±1 12
Ra Pch Rb Vref Nch Rc -1 1 2 3 4 5 () (+VDET) -VDET) A (VHYS) B 1 2 3 4 5 (+) I II III IV V H L L H Tr.1 OFF ON ON OFF (V) Tr. Pch ON OFF OFF ON Nch OFF ON ON OFF I. Rb + Rc Ra + Rb + Rc t PLH II. Rb Ra + Rb -2 () A Vref (Rb+Rc)/(Ra+Rb+Rc) A ( VDET) B Vref Rb/(Ra+Rb) () B (+VDET) 13
Ra + - V ref Rb Operational Amplifier Nch Rc -3. (R3111XXXXB) 検出電圧 (V DD ) 最低動作電圧 (+V DET) (-V DET ) 1 2 3 4 5 A B Step 1 2 3 4 5 Output Tr. I II III IV V H L L H Tr.1 OFF ON ON OFF Nch OFF ON ON OFF (V) tp LH tph PHL I. II. Rb + Rc Ra + Rb + Rc Rb Ra + Rb -4. () A Vref (Rb+Rc)/(Ra+Rb+Rc) A ( VDET) () B Vref Rb/(Ra+Rb)B (+VDET) 14
ISS 5.V 47k VIN R3111X VIN R3111X V CMOS -3-4 VDS VIN R3111X I VDS VIN R3111X I - VDS -5 Nch CMOS -6 Pch +VDET+2.V.7V VSS P.G. xxxa R +5.V 47k +VDET+2.V.7V VSS P.G. RIN 1K xxxa R +5.V 47k C CIN VSS VSS -7 (1) -8 (2) 15
1) 9xC 2.5 2. 27xC ISS(µA) 2. 1.5 1..5 Topt=85 C 25 C -4 C ISS(µA) 1.5 1..5 Topt=85 C 25 C -4 C. 2 4 6 8 1 VIN(V). 2 4 6 8 1 VIN(V) 2. 45xC ISS(µA) 1.5 1..5 Topt=85 C 25 C -4 C. 2 4 6 8 1 VIN(V) 2) 9xC 1..98 -VDET(V).96.94.92.9.88.86 +VDET -VDET.84-6 -4-2 2 4 6 8 1 Topt( C) -VDET(V) 27xC 2.9 2.8 2.7 2.6 +VDET -VDET 2.5-6 -4-2 2 4 6 8 1 Topt( C) 16
4.8 45xC -VDET(V) 4.7 4.6 4.5 +VDET -VDET 4.4-6 -4-2 2 4 6 8 1 Topt( C) 3) 9xA V(V) 1.6 1.4 1.2 1..8.6.4.2. 85 C 25 C Topt=-4 C VIN(V) Pull-up 47kΩ.2.4.6.8 1 1.2 1.4 1.6 V(V) 6 5 4 3 2 1 85 C 9xA Topt=-4 C 25 C VIN(V) 5V Pull-up 47kΩ.2.4.6.8 1 1.2 1.4 1.6 27xA 27xA 4. Pull-up 47kΩ 6 5V Pull-up 47kΩ V(V) 3.5 3. 2.5 2. 1.5 1..5. 85 C 25 C Topt=-4 C.5 1 1.5 2 2.5 3 3.5 4 VIN(V) V(V) 5 4 3 2 1 Topt=-4 C 25 C 85 C.5 1 1.5 2 2.5 3 3.5 4 VIN(V) 17
45xA 45xA 6 Pull-up 47kΩ 6 5V Pull-up 47kΩ V(V) 5 4 3 2 85 C 25 C 1 Topt=-4 C 1 2 3 4 5 6 VIN(V) V(V) Topt=-4 C 5 25 C 4 85 C 3 2 1 1 2 3 4 5 6 VIN(V) 4) Nch VDS 9xC 9xC 7 3 I(µA) 6 5 4 3 2 =.85V.7V I(µA) 25 2 15 1 =.8V.7V 1 5.2.4.6.8 VDS(V).2.4.6.8.1 VDS(V) 27xC 27xC I(mA) 2 18 16 14 =2.5V 12 2.V 1 8 6 1.5V 4 2.5 1 1.5 2 2.5 VDS(V) I(µA) 3 25 =.8V 2 15.7V 1 5.2.4.6.8.1 VDS(V) 18
45xC 45xC 6 3 I(mA) 5 4 3 2 1 2.5V 2.V 1.5V 3.V =4.5V 4.V 3.5V.5 1 1.5 2 2.5 3 3.5 4 4.5 I(µA) 25 =.8V 2 15.7V 1 5.2.4.6.8.1 VDS(V) VDS(V) 5) Nch 9xC 27xC 9 14 I(µA) 8 7 6 5 4 3 2 1 Topt=-85 C 25 C -4 C.2.4.6.8 1 I(mA) 12 1 8 6 Topt=-4 C 25 C 85 C 4 2.5 1 1.5 1 2.5 3 VIN(V) VIN(V) 45xC 25 I(mA) 2 15 1 5 Topt=-4 C 25 C 85 C 1 2 3 4 5 6 VIN(V) 19
6) Pch 9xC 27xC 1.4 3.5 I(mA) 1.2 1..8.6.4 VDS=.7V.5V I(mA) 3. 2.5 2. 1.5 1. VDS=2.1V 1.5V 1.V.2.5.5V. 2 4 6 8 VIN(V). 1 2 3 4 5 6 7 VIN(V) 45xC 4.5 4. I(mA) 3.5 3. 2.5 2. 1.5 1. VDS=2.1V 1.5V 1.V.5V.5. 2 4 6 8 1 VIN(V) 7) 9xA 1 1 27xA tp(ms) 1 1.1.1 tplh tphl tp(ms) 1 1.1.1 tplh tphl.1.1.1.1.1 C(µF).1.1.1.1.1 C(µF) 2
1 45xA tp(ms) 1 1.1.1 tplh tphl.1.1.1.1.1 C(µF) 8) 9xA 1 1 27xA tp(ms) 1 1.1.1 tplh tphl tp(ms) 1 1.1.1 tplh tphl.1.1.1.1.1 CIN(µF).1.1.1.1.1 CIN(µF) 1 45xA tp(ms) 1 1.1.1 tplh tphl.1.1.1.1 1 CIN(µF) 21
xx1a CPU Nch (1) xxxa CPU xxxa 47k R CPU RESET (2) xxxa CPU 1 xxxa 47k R CPU RESET 2 xxxa CPU CMOS xxxc CPU RESET xxxa 1 Nch xxxa 2 Nch xxxa 47k R CPU RESET 1K R1 xxxa 47k R2 CPU RESET D1 D2 A B G VCC Y1 Y2 Y3 Y4 VCC VCC VCC VCC RAM1 RAM2 RAM3 RAM4 CS CS CS CS xxxc 22
Nch xxxa Nch =(-VDET) (Ra+Rb)/Rb xxxa C + Ra Rb =(VHYS) (Ra+Rb)/Rb ) Ra IC Ra Nch VDET1 VDET2 xxxa VDET2 VSS xxxa VDET1 VSS Light Solar Battery R1 D1 R2 R3 xxxc R4 Load 23
R R1 R3111 R3111 R2-9 -1 1. -9xxxC xxxc xxxa/b RIC 2. -1 24