19-3116; Rev 0; 12/03 PART TEMP RANGE PIN-PACKAGE E/D -40 C to +85 C Dice* ETE -40 C to +85 C 16 Thin QFN * HOST BOARD SFP OPTICAL TRANSMITTER HOST FILTER VCC_RX SUPPLY FILTER +3.3V 15Ω 56Ω 0.01µF VCC SERDES 0.1µF 0.1µF IN+ BIAS IN- BC_MON DIS MODSET BIASSET GND 8.2pF Ω FERRITE BEAD TX_DISABLE MOD-DEF1 MOD-DEF2 LASER CONTROLLER Maxim Integrated Products 1
ABSOLUTE MAXIMUM RATINGS Power-Supply Voltage...-0.5V to +6.0V Voltage at IN+, IN-, DIS.. -0.5V to ( + 0.5V) Voltage at BC_MON, MODSET, BIASSET...-0.5V to +3.0V Voltage at,. +0.5V to ( + 1.5V) Voltage at BIAS... +0.5V to ( + 0.5V) Current into BIAS,,...-mA to +150mA Current into IN+, IN-... -ma to +ma Continuous Power Dissipation (T A = +85 C) 16-Pin Thin QFN (derate 25mW/ C above +85 C)...2W Operating Junction Temperature Range...-55 C to +150 C Storage Temperature Range...-55 C to +150 C Die Attach Temperature...+400 C Lead Temperature (soldering, s)...+0 C Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS ( = +2.97V to +3.63V, T A = -40 C to +85 C. Typical values are at = +3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) (Note 1) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Power-Supply Current I CC Excludes the laser bias and modulation currents (Note 2) I/O SPECIFICATIONS 22 35 ma Differential Input Voltage V ID V ID = V IN+ - V IN-, Figure 1 0.2 2.4 V P-P 0.6 Common-Mode Input Voltage V INCM V Differential Input Resistance R IN 85 0 115 Ω DIS Input Pullup Resistance R PULL 4.7 7.2.0 kω DIS Input Current V DIS = 15 V DIS = GND, = 3.3V, R PULL = 7.4kΩ -450 DIS Input High Voltage V IH 2.0 V DIS Input Low Voltage V IL 0.8 V BIAS GENERATOR Bias Current Range I BIAS Current into BIAS pin 1 0 ma Bias Off-Current I BIASOFF Current into BIAS pin, DIS asserted high 0 µa BIASSET Current Gain G BIAS (Note 3) 5mA I BIAS ma 70 85 95 ma I BIAS 0mA 79 85 91 BIASSET Current Gain Stability ma I BIAS 0mA (Note 4) -4.4 +4 % BIASSET Current Gain Linearity ma I BIAS 0mA (Note 5) -2.3 +2.3 % Bias Overshoot During SFP module hot plugging; see Figure 3 (Notes 5, 6) µa A/A % Bias-Current Monitor Gain (Note 5) 13.7 ma/a 1mA I BIAS 5mA 4 Bias-Current Monitor Gain 5mA I BIAS ma -7 2.8 +7 % Stability (Notes 4, 5) ma I BIAS 0mA -5 2.4 +5 Current into, R L = 15Ω, V and V 0.6V (DC-coupled) Modulation Current Range I MOD Current into, R L = 15Ω, V and V 2.0V (AC-coupled) 5 60 5 85 ma P-P 2
ELECTRICAL CHARACTERISTICS (continued) ( = +2.97V to +3.63V, T A = -40 C to +85 C. Typical values are at = +3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) (Note 1) MODULATOR PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Modulation Current Gain G MOD (Note 3) 5mA I MOD ma 70 85 95 ma I MOD 85mA 79 85 91 Modulation Current Gain Stability ma I MOD 85mA (Notes 4, 5) -4.4 +4 % Modulation Current Gain Linearity ma I MOD 85mA (Note 5) -3.3 +3.3 % Bias Current Gain and Modulation Current Gain Matching (Notes 5, 7) I BIASSET = 0.15mA; I MODSET = 0.7mA 2.3 I BIASSET = I MODSET = 0.15mA 0.1 1.4 I BIASSET = I MODSET = 0.4mA 0.1 1 I BIASSET = I MODSET = 0.6mA 0.1 1 I BIASSET = I MODSET = 0.9mA 0.1 1 Modulation OFF Current I MODOFF DIS asserted high 0 µa Rise Time t R % to 80%; ma I MOD 60mA (Note 5) 48 80 ps Fall Time t F 80% to %; ma I MOD 60mA (Note 5) 58 80 ps ma I MOD 60mA; 2.67Gbps; 2 23-1 PRBS 16 38 A/A % Deterministic Jitter (Notes 5, 8) ma I MOD 60mA; 3.2Gbps; K28.5 pattern ma I MOD 60mA; 155Mbps; 2 23-1 PRBS 17 38 ps P-P ma I MOD 60mA; 3.2Gbps; K28.5; T A = +0 C 6.3 ps Random Jitter ma I MOD 60mA (Note 5) 0.6 1 ps RMS Note 1: Specifications at -40 C are guaranteed by design and characterization. Dice are tested at T A = +25 C only. Note 2: Maximum value is specified at I MOD = 60mA and IBIAS = 0mA. BC_MON connected to. Note 3: Modulation current gain, G MOD, is defined as G MOD = I MOD / I MODSET. Bias current gain, G BIAS, is defined as G BIAS = I BIAS / I BIASSET. The nominal gain is measured at = +3.3V and T A = +25 C. Note 4: Gain stability is defined as [(Gain) - (Nom_Gain)] / (Nom_Gain) over the listed current range, temperature, and supply variation. Nominal gain is measured at = +3.3V, T A = +25 C. The voltage at the BC_MON pin must not exceed 1.39V. Note 5: Guaranteed by design and characterization; see Figure 2. Note 6: turn-on time must be less than 0.8s, DC-coupled interface. Note 7: The gain matching is defined as ABS [(G MOD /G BIAS - G MODNOM /G BIASNOM )/(G MODNOM /G BIASNOM )] over the specified temperature and voltage supply range. Note 8: For supply noise tolerance, noise is added to the supply (0mV P-P ) up to 2MHz; see Figure 3. 3
VOLTAGE V IN+ (V IN+ ) - (V IN- ) CURRENT I 0mV MIN mv MAX 0mV P-P MIN 2400mV P-P MAX V IN- 25Ω 1.1pF 26Ω Ω OSCILLOSCOPE I MOD I 1Ω SOURCE NOISE HOST BOARD FILTER DEFINED BY SFP MSA 1µH MODULE TO LASER DRIVER OPTIONAL VOLTAGE SUPPLY 0.1µF µf 0.1µF OPTIONAL (Typical values are at = 3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) OPTICAL EYE (155Mbps) OPTICAL EYE (2.488Gbps) ELECTRICAL EYE (2.488Gbps) 117 MHz FILTER, 2 31-1 PRBS 13nm FP LASER toc01 E R = 8.2dB, OC-48 FILTER 2 31-1 PRBS, 13 FP LASER toc02 1870MHz FILTER 2 23-1 PRBS toc03 C4 919ps/div 58ps/div 58ps/div 4
(Typical values are at = 3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) SUPPLY CURRENT (ma) 80 70 60 50 40 SUPPLY CURRENT vs. TEMPERATURE EXCLUDES I BIAS AND I MOD toc05 GAIN (ma/a) 18 16 14 12 BIAS CURRENT MONITOR GAIN vs. TEMPERATURE toc06 IMOD (map-p) 80 70 60 50 40 MODULATION CURRENT vs. MODSET RESISTANCE (Z L = 15Ω) toc07-40 -15 35 60 85 TEMPERATURE ( C) -40-15 35 60 85 TEMPERATURE ( C) 0 1 0 R MODSET (kω) IBIAS (ma) 0 90 80 70 60 50 40 BIAS CURRENT vs. BIAS RESISTANCE toc08 EDGE TRANSITION TIME (ps) 80 70 60 50 40 EDGE TRANSITION TIME vs. MODULATION AMPLITUDE FALL TIME RISE TIME toc09 0 1 0 R BIASSET (kω) 40 50 60 I MOD (ma) 5
(Typical values are at = 3.3V, I BIAS = ma, I MOD = ma, T A = +25 C, unless otherwise noted.) 60 50 DETERMINISTIC JITTER vs. MODULATION CURRENT 2.7Gbps 2 23-1 PRBS toc 0-5 DIFFERENTIAL S 11 vs. FREQUENCY toc11 40 - DJ (psp-p) IS11I (db) -15 - -25 0 40 50 60 I MOD (ma P-P ) - 0 2 4 6 8 FREQUENCY (GHz) PIN NAME FUNCTION 1, 4, 9, 12, 15 +3.3V Supply Voltage. All pins must be connected to. 2 IN+ Noninverted Data Input 3 IN- Inverted Data Input 5 BIASSET 6 MODSET A current DAC, a voltage DAC, or a resistor, connected from this pin to ground, sets the desired bias current for the laser (see the Programming the Laser Bias Current section). A current DAC, a voltage DAC, or a resistor, connected from this pin to ground, sets the desired bias current for the laser (see the Programming the Laser Modulation Current section). 7 BC_MON Bias Current Monitor Output. Current out of this pin develops a ground-referenced voltage across an external resistor that is proportional to the bias current. 8 BIAS Laser Bias Current Output Noninverted Modulation Current Output. I MOD flows into this pin when input data is high. 11 Inverted Modulation Current Output. I MOD flows into this pin when input data is low. 13, 14 GND Ground 16 DIS Transmitter Disable, TTL. Laser output is disabled when DIS is asserted high or left unconnected. The laser output is enabled when this pin is asserted low. EP Exposed Pad Ground. Must be soldered to the circuit board ground for proper thermal and electrical performance (see the Exposed Pad Package section). 6
82pF 16kΩ 24kΩ DIS 7.2kΩ IN+ IN- BIAS x1 x85 x85 BC_MON 1.2V 1.2V BIASSET MODSET 7
12. V V I DAC MOD = 85 RSERIES V IMOD = 12. R 85 MODSET IBIAS = IBIASET 85 µ µ µ IMOD = IMODSET 85 12. V V I DAC BIAS = 85 RSERIES V IBIAS = 12. R 85 BIASET 8
PACKAGE IN+ 0.65nH 0.11pF 82pF 16kΩ PACKAGE 0.43nH 0.43nH 0.11pF 0.11pF IN- 0.65nH 0.11pF 24kΩ µ µ µ 9
TOP VIEW DIS VCC GND GND TRANSISTOR COUNT: 1385 PROCESS: SiGe BIPOLAR SUBSTRATE CONNECTED TO GND DIE THICKNESS: 15 mils 4 5 6 7 8 BIASSET MODSET BC_MON BIAS 9 THIN QFN (3mm x 3mm) THE EXPOSED PAD MUST BE CONNECTED TO GROUND FOR PROPER THERMAL AND ELECTRICAL PERFORMANCE IN+ (0,0) IN- GND DIS GND GND GND BIASSET MODSET BC_MON 1.55mm (61mils) BIAS 16 15 14 13 IN+ 1 2 12 11 MA3736 IN- 3 1.14mm (45mils)
PAD NUMBER PAD NAME COORDINATES (µm) BP1 0 5.8 BP2 IN+ 0 351.4 BP3 IN- 0 169.4 BP4 0 0 BP5 BIASSET 298.3-222.1 BP6 MODSET 526.5-222.1 BP7 BC_MON 737.7-223.5 BP8 BIAS 14.8-224.9 BP9 1258.9-7.9 BP 1258.9 32.1 BP11 1258.9 179.1 BP12 1258.9 342.9 BP13 1258.9 490 BP14 1258.9 629.9 BP15 GND 60 6.9 BP16 GND 896.1 632.3 BP17 GND 712.7 6.9 BP18 550.3 6.9 BP19 DIS 378.1 631 BP GND 191.8 6.9 X Y japan.maxim-ic.com/packages Maxim Integrated Products, 1 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 11 03 Maxim Integrated Products is a registered trademark of Maxim Integrated Products.