MOSFETs / Junction FETs: SEMICONDUCTOR GENERAL CATALOG

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SEMICONDUCTOR GENERAL CATALOG 半導体製品総覧表 08 年 7 月版 MOSFETs / Junction FETs MOSFET / 接合形 FET Low Voltage MOSFETs / 低耐圧 MOSFET Mid-High Voltage MOSFETs / 中高耐圧 MOSFET Automotive MOSFETs / 車載 MOSFET Junction FETs / 接合形 FET SiC MOSFETs / SiC MOSFET Radio-Frequency MOSFETs / 高周波 MOSFET SCA0004N

Low Voltage MOSFETs / MOSFET High-Speed Switching / (Single N-Channel) / N.8.6 VS-6 VDSS VGSS ID (A) TPC6008 -H 0 5.9 TPC6009 -H 40 5. PD VGS = VGS = (W) 0 V 4.5 V Ciss Crss Coss Qg (nc). () 60 74 6 68 4.8 U-MOSVI-H. () 8 98 5 54 4.7 U-MOSVI-H (6A).4 (/5).0.9 5 TPC600 -H 60 6.. () 59 6 640 4 95 U-MOSVI-H PS-8.8.4 TPCP8007 -H 60 5.68 () 57 64 640 5 90 U-MOSVI-H (8A).4.9 TPCC8067 -H 9 5 5 690 8 0 9.5 U-MOSVII-H TPCC8066 -H 7 5 9 00 49 90 5 U-MOSVII-H TPCC8065 -H 8.4 4.5 50 6 40 0 U-MOSVII-H TPCC8068 -H 7.6 6 980 57 0 4 U-MOSVII-H TPCC8064 -H 9 0 8. 600 78 90 U-MOSVII-H TPCC806 -H 7 9 5.6 7. 400 0 40 4 U-MOSVII-H TPN00 NL () 9 6 50 8 00 7.5 U-MOSVIII-H 0 TPN8R90 NL 7 () 8.9.7 60 50 9.8 U-MOSVIII-H TPN6R00 NL 56 () 6 8. 050 7 600 7 U-MOSVIII-H TPN4R0 NL 6 () 4 4. 6. 0 9 640 4.8 U-MOSVIII-H TPN5R0 PL 76 () 6 5. 6.4 50 55 55 U-MOSIX-H TPNR70 NL 90 () 4.7 4. 600 5 890 U-MOSVIII-H TPNR90 PL () 75.9 4. 780 60 60 6 U-MOSIX-H TPNR60 PL 88 () 04.6.5 970 0 850 4 U-MOSIX-H TSON Advance TPN7R504 PL 68 () 6 7.5 0 570 5 80 4 U-MOSIX-H (8A) TPNR704 PL 40 9 () 86.7 6 90 4 470 7 U-MOSIX-H TPNR04 PL 00 () 04. 4 750 66 650 4 U-MOSIX-H. 5 TPNR805 PL 45 9 () 04.8 50 56 60 9 U-MOSIX-H. TPN006 NH () 8 70 4 5 U-MOSVIII-H TPN4006 NH () 0 4 000 5 0 5 U-MOSVIII-H TPN006 NL 7 () 0.4 7 500 50 U-MOSVIII-H TPN7R506 NH 60 5 () 4 7.5 40 8 480 U-MOSVIII-H TPN006 PL 54 () 6.4 8. 50 5 5 7 U-MOSIX-H TPN7R006 PL 76 () 75 7.40 5 00 0 U-MOSIX-H TPN4R806 PL 05 () 04 4.8 9. 0 45 60 9 U-MOSIX-H TPN0008 NH () 7 0 70 0 70 U-MOSVIII-H 80 TPN008 NH 40 () 4. 0 0 90 8 U-MOSVIII-H TPN00 ANH () 7 680 8.8 0 U-MOSVIII-H TPN600 ANH 00 6 () 4 6 0 8 0 9 U-MOSVIII-H TPN00 APL * 66 () 04.5 0 45 5 0 U-MOSIX-H (8B) TPN5900 CNH 50 8 () 9 59 460 80 7 U-MOSVIII-H TPN0 ENH 00 () 9 4 460 55 7 U-MOSVIII-H (8A) TPN00 FNH 50 9.9 () 9 98 460 45 7 U-MOSVIII-H.. Note (): ID (DC) (Silicon Limit) (): Device mounted on a glass board. t = 5 seconds. / t = 5 0...65 Top View (6A) (8A) (8B) 6 4 4

(Single N-Channel) / N 6.0 5.0 6.0 5.0 DSOP Advance 5.0 Note (): ID (DC) (Silicon Limit) VDSS VGSS ID (A) PD VGS = VGS = (W) 0 V 4.5 V Ciss Crss Coss Qg (nc) TPWR850 NL 00 () 4 5. 500 0 700 74 U-MOSVIII-H 0 TPWR600 PL 4 () 70 4 7700 0 70 0 U-MOSIX-H TPWR8004 PL 40 40 () 70.5 770 58 90 0 U-MOSIX-H TPWR005 PL 45 00 () 70 0.99.65 7700 76 860 U-MOSIX-H TPWR06 PL 60 60 () 70.9. 650 80 60 9 U-MOSIX-H TPWR508 NH 75 70 () 4.5 4600 50 00 7 U-MOSVIII-H TPW4R008 NH 80 6 4 4 400 890 59 U-MOSVIII-H TPW4R50 ANH 9 4 4.5 4000 700 58 U-MOSVIII-H 00 TPWR70 APL * 50 () 70.7 6. 4850 9 640 67 U-MOSIX-H TPW500 CNH 50 50 () 4 5.4 700 7 80 U-MOSVIII-H TPW900 ENH 00 6 () 4 9 700 7 80 U-MOSVIII-H TPW500 FNH 50 7 () 4 5 700 7 40 U-MOSVIII-H TPCA8068 -H 5.6 6 980 57 0 4 U-MOSVII-H TPCA8065 -H 6 5.4 4.5 50 6 40 0 U-MOSVII-H TPCA8064 -H 0 8. 600 78 90 U-MOSVII-H TPCA806 -H 5 6.8 8.7 900 9 40 7 U-MOSVII-H TPCA806 -H 8 4 5.6 7. 400 0 40 4 U-MOSVII-H TPCA8059 -H 45.8 4.8 900 50 50 4 U-MOSVII-H TPH00 NL () 6 50 8 00 7.5 U-MOSVIII-H TPCA809 -H 5 5 6 8.4 40 0 80 0 U-MOSVII-H TPCA8058 -H 8 5.8 600 00 680 5 U-MOSVII-H TPH8R90 NL 8 () 4 8.9.7 60 50 9.8 U-MOSVIII-H TPCA8057 -H 4 57.6. 400 40 80 6 U-MOSVII-H TPCA8056 -H 48 6..7 500 90 000 74 U-MOSVII-H 0 TPCA8055 -H 56 70.9. 6400 60 00 9 U-MOSVII-H TPH6R00 NL 57 () 4 6 8. 050 7 600 7 U-MOSVIII-H SOP Advance TPH4R00 NL 68 () 6 4 6. 0 9 640 4.8 U-MOSVIII-H TPHR0 NL 84 () 44. 4.7 600 5 890 U-MOSVIII-H TPH4R80 PL * 90 () 69 4.8 6. 50 55 55 U-MOSIX-H TPHR90 PL 4 () 8.9 4. 780 60 60 6 U-MOSIX-H TPHR00 PL 4 () 90 4. 940 88 850 50 U-MOSIX-H 5.0 5. TPHR40 NL 50 () 64.4. 400 9 800 46 U-MOSVIII-H TPHR00 PL 80 () 6.6 490 55 86 U-MOSIX-H TPHR900 NL 0 () 78 0.9.4 500 0 700 74 U-MOSVIII-H TPHR90 PL 80 () 0.9.9 5800 90 750 8 U-MOSIX-H TPHR650 PL 9 () 70 9 7700 0 70 0 U-MOSIX-H TPCA805 -H 0 0.. 60 85 80 5 U-MOSVI-H TPCA8047 -H 45 7. 8.5 590 40 4 U-MOSVI-H TPCA8046 -H 8 45 5.4 6. 545 85 600 55 U-MOSVI-H TPCA8045 -H 46 45.6 4. 5800 05 950 90 U-MOSVI-H TPH7R04 PL 7 () 69 7. 9.7 570 5 80 4 U-MOSIX-H TPH6R004 PL 87 () 8 6 8.4 00 50 470 0 U-MOSIX-H 40 TPHR704 PL 9 8.7 6 90 4 470 7 U-MOSIX-H TPHR704 PC 8 () 90.7 5.8 780 60 640 47 U-MOSIX-H TPHR04 PL 80 () 6.. 4790 70 050 78 U-MOSIX-H TPHR04 PB 40 (). 4400 55 00 6 U-MOSIX-H TPHR04 PL 46 ().4. 5500 9 00 74 U-MOSIX-H (Continued on next page) TPHR8504 PL 40 () 70 5.4 770 58 90 0 U-MOSIX-H (8A) (8A) 5 5.7 4.7 5 5.7 4.7.05.75 4.8.05.45.75 4.8 (/5).45 Top View (8A) 4

(Single N-Channel) / N 6.0 5.0 Note (): ID (DC) (Silicon Limit) VDSS VGSS ID (A) PD VGS = VGS = (W) 0 V 4.5 V Ciss Crss Coss Qg (nc) (Continued from previous page) TPHR805 PL 50 () 6.8.9 980 45 980 7 U-MOSIX-H TPHR405 PL 45 ().4. 480 66 0 74 U-MOSIX-H TPHR005 PL 80 () 70.04.7 7700 76 860 U-MOSIX-H TPCA805 -H 5 0. 4 60 60 00 5 U-MOSVI-H TPCA8049 -H 8 45. 545 0 40 55 U-MOSVI-H TPH4006 NH 4 () 4 000 5 0 6 U-MOSVIII-H TPCA8048 -H 5 6.6 7. 5800 0 650 90 U-MOSVI-H TPH006 NL 40 () 4.4 7 500 50 U-MOSVIII-H TPH7R506 NH 55 () 45 7.5 780 575 U-MOSVIII-H TPH9R506 PL 68 () 8 9.5 70 0 70 U-MOSIX-H TPH5R906 NH 60 7 () 57 5.9 40 50 745 8 U-MOSVIII-H TPH7R006 PL 79 () 8 7.40 5 00 U-MOSIX-H TPH4R606 NH 85 () 6 4.6 050 60 990 49 U-MOSVIII-H (8A) TPHR06 NH 0 () 78. 4700 55 500 7 U-MOSVIII-H TPHR506 PL 5 () 6.5 6.7 400 50 600 55 U-MOSIX-H TPHR506 PL 60 ()..4 480 60 770 60 U-MOSIX-H SOP Advance TPHR06 PL 60 () 70.4. 650 80 60 9 U-MOSIX-H TPHR06 P * 60 () 70.8. 650 80 60 9 U-MOSIX-H TPHR608 NH 75 68 () 4.6 4600 50 00 7 U-MOSVIII-H TPCA805 -H 8 45 9.4 9.8 5800 50 50 9 U-MOSVI-H TPH008 NH 44 80 48. 490 6 0 U-MOSVIII-H 5.0 TPH8R008 NH 6 () 6 8 00 50 5 U-MOSVIII-H 5. TPH4R008 NH 00 () 78 4 400 890 59 U-MOSVIII-H TPH400 ANH 4 () 48.6 440 5 60 U-MOSVIII-H TPH8R80 ANH 59 () 6 8.8 80 40 U-MOSVIII-H TPH6R0 ANL 66 () 54 6. 0. 00 7 40 55 U-MOSVIII-H (8B) TPH4R0 ANL 00 9 () 67 4. 6.6 4850 9 640 75 U-MOSVIII-H TPH4R50 ANH 9 () 78 4.5 4000 700 58 U-MOSVIII-H (8A) TPH5R60 APL * 06 () 5.6 9.5 00 7 40 5 U-MOSIX-H (8B) TPHR70 APL * 50 () 70.7 6. 4850 9 640 67 U-MOSIX-H TPH5900 CNH 8 () 4 59 460 80 7 U-MOSVIII-H TPH00 CNH 50 9 () 57 80 40 U-MOSVIII-H TPH500 CNH 50 () 78 5.4 700 7 80 U-MOSVIII-H TPH0 ENH () 4 4 460 55 7 U-MOSVIII-H TPH6400 ENH 00 () 57 64 80 90. U-MOSVIII-H TPH900 ENH 6 () 78 9 700 7 80 U-MOSVIII-H TPH00 FNH 0 () 4 98 460 45 7 U-MOSVIII-H TPH0 FNH 50 5 () 57 80 75 U-MOSVIII-H TPH500 FNH 7 () 78 5 700 7 40 U-MOSVIII-H TPC8067 -H 9.9 5 690 8 0 9.5 U-MOSVII-H TPC8066 -H.9 6 9 00 49 90 5 U-MOSVII-H SOP-8 TPC8065 -H.9.6 4.7 50 6 40 0 U-MOSVII-H TP89R0 NL 5.9 9..9 60 50 9.8 U-MOSVIII-H TPC8064 -H 6.9 8.4 600 78 90 U-MOSVII-H TPC806 -H 7.9 7 8.9 900 9 40 7 U-MOSVII-H 0 TPC8055 -H 8.9..5 6400 60 00 9 U-MOSVII-H 4.9.68 TPC8056 -H 8.9.4.9 500 90 000 74 U-MOSVII-H TPC8057 -H 8.9.8.4 400 40 80 6 U-MOSVII-H TPC8058 -H 8.9. 4 600 00 680 5 U-MOSVII-H TPC8059 -H 8.9 4 5 900 50 50 4 U-MOSVII-H (Continued on next page) TPC806 -H 8.9 5.8 7. 400 0 40 4 U-MOSVII-H 6.0.9 (8A) (8A) 5 5 5.5.7 4.7.7.05.75 4.8 (/5).45.0 Top View (8A) (8B) 4 4 4

(Single N-Channel) / N VDSS VGSS ID (A) PD VGS = VGS = (W) 0 V 4.5 V Ciss Crss Coss Qg (nc) (Continued from previous page) TP86R0 NL 0 9 ().9 6. 8.5 050 7 600 7 U-MOSVIII-H 6.0.9 SOP-8 4.9.68 DPAK+ TPC8089 -H 7..9 6 850 40 4 U-MOSVI-H TPC805 -H.9.5. 60 85 80 5 U-MOSVI-H TPC8047 -H 40 6.9 7.6 8.8 590 40 4 U-MOSVI-H TPC8045 -H 8.9.9 4.4 5800 05 950 90 U-MOSVI-H TPC8046 -H 8.9 5.7 6.6 545 85 600 57 U-MOSVI-H TPC805 -H 9.9.. 60 60 00 5 U-MOSVI-H TPC8050 -H.9 4.5 5.6 590 95 00 4 U-MOSVI-H 60 TPC8049 -H.9.5 545 0 40 56 U-MOSVI-H TPC8048 -H 6.9 6.9 7.4 5800 0 650 87 U-MOSVI-H TPC805 -H 80.9 9.7 0. 5800 50 50 85 U-MOSVI-H (8A) 5.5.7 6.0 (4/5).0 9.5 5.5 TKS0N H 00 5 9.7 050 40 070 8 U-MOSVIII-H (B).0.0 6.0 6.5.4.6.6.. 0.0 6. DPAK 6.6 TK40P0M 40 4.4 50 85 60 7.5 U-MOSVI-H TK45P0M 0 45 9 9.7 500 00 0 5 U-MOSVI-H TK50P0M 50 47 7.5 9.8 700 5 80 5. U-MOSVI-H TK0P04M 0 7 9 4 985 7 59 5 U-MOSVI-H TK40P04M 40 47.4 90 90 0 9 U-MOSVI-H 40 TK50P04M 50 60 8.7 0. 600 0 40 8 U-MOSVI-H TKRP04 PL * 0 () 87. 4. 4670 70 000 60 U-MOSIX-H TK6R7P06 PL * 74 () 66 6.7. 990 45 50 6 U-MOSIX-H 60 TK4R4P06 PL * 06 () 87 4.4 7. 80 60 600 48. U-MOSIX-H TK0P0 PL * 60 () 75 6 040 0 U-MOSIX-H 00 TK7R7P0 PL * 79 () 9 7.7.5 800 50 44 U-MOSIX-H.7 (A) 6.0.0.0 6.0.6.6.. DPAK 0.5 4.46 8.8 5. TK65G0N 00 6 () 56 4.5 5400 4 950 8 U-MOSVIII-H (A) 6. 5.0 4.0 9.5.0.0 TKRA04 PL 40 8 6..8 4670 70 000 6.4 U-MOSIX-H TO-0SIS TK0A06N 4 () 5 5 050 400 6 U-MOSVIII-H 0.0 TK8RA06 PL 50 6 8..4 990 45 50 8 U-MOSIX-H TK40A06N 60 () 0 700 40 580 U-MOSVIII-H TK5RA06 PL * 6 () 6 5. 9. 80 50 470 6 U-MOSIX-H 60 TK4RA06 PL 68 6 4. 7. 80 60 600 48. U-MOSIX-H TKRA06 PL * 88 () 4. 4.9 5000 55 950 7 U-MOSIX-H TK58A06N 05 () 5 5.4 400 45 0 46 U-MOSVIII-H TK00A06N 6 () 45.7 0500 50 500 40 U-MOSVIII-H (Continued on next page) TK5A08N 80 55 () 0. 700 8 440 5 U-MOSVIII-H Note (): ID (DC) (Silicon Limit) (A_I).6.54.54 (A) (A_I) (B) (8A) Source Source 4 Source 5

(Single N-Channel) / N 5.0.0.0 Note (): ID (DC) (Silicon Limit) VDSS VGSS ID (A) PD VGS = VGS = (W) 0 V 4.5 V Ciss Crss Coss Qg (nc) (Continued from previous page) TK46A08N 80 () 5 8.4 500 60 7 U-MOSVIII-H TK7A08N 80 57 () 4.5 5500 8 00 8 U-MOSVIII-H TK00A08N 4 () 45. 9000 5 00 0 U-MOSVIII-H TK0A0 PL * 4 () 6 6 040 0 U-MOSIX-H TK7R4A0 PL * 50 4 7.4. 800 50 44 U-MOSIX-H TO-0SIS TKA0N 5 () 0.8 800 8 0 8 U-MOSVIII-H 0.0 TK6R7A0 PL * 56 4 6.7 0. 455 0 50 58 U-MOSIX-H TK4A0N 75 () 5 9.5 600 450 8 U-MOSVIII-H 00 TK4RA0 PL * 85 () 54 4. 5.9 60 45 950 04 U-MOSIX-H TK40A0N 90 () 5 8. 000 9 50 49 U-MOSVIII-H TKRA0 PL * 06 () 54. 4. 9500 65 500 6 U-MOSIX-H TK65A0N 48 () 4.8 5400 4 950 8 U-MOSVIII-H TK00A0N 07 () 45.8 8800 6 500 40 U-MOSVIII-H 5..9.85 TO-0 TKAN 60 () 0.8 000 0 4 U-MOSVIII-H TK4AN 88 () 5 9.4 00 6 490 5 U-MOSVIII-H 0 TK56AN () 45 7.5 400 9 650 69 U-MOSVIII-H TK7AN 79 () 4.5 800 0 00 0 U-MOSVIII-H TKRE0 GL 0 47 () 04. 4. 450 60 70 67 U-MOSVII-H TKRE04 PL 40 8 () 87..8 4670 70 000 6.4 U-MOSIX-H TK0E06N 4 () 5 5 050 400 6 U-MOSVIII-H TK40E06N 60 () 67 700 40 580 U-MOSVIII-H (A) TKRE06 PL * 60 () 68. 4.7 5000 55 950 7 U-MOSIX-H TK8RE06 PL 75 () 8 8..4 990 45 50 8 U-MOSIX-H 60 TK5RE06 PL * 98 () 87 5. 8.8 80 50 470 6 U-MOSIX-H (A_I) TK58E06N 05 () 0 5.4 400 45 0 46 U-MOSVIII-H TK4RE06 PL 06 () 87 4. 7. 80 60 600 48. U-MOSIX-H TK00E06N 6 () 55. 0500 50 500 40 U-MOSVIII-H TK5E08N 55 7. 700 8 440 5 U-MOSVIII-H TK46E08N 80 0 8.4 500 60 7 U-MOSVIII-H 80 TK7E08N 57 () 9 4. 5500 8 00 8 U-MOSVIII-H (A) TK00E08N 4 () 55. 9000 5 00 0 U-MOSVIII-H TKE0N 5 7.8 800 8 0 8 U-MOSVIII-H TK0E0 PL * 64 () 87 6 040 0 U-MOSIX-H TK4E0N 75 0 9.5 600 450 8 U-MOSVIII-H TK40E0N 90 6 8. 000 9 50 49 U-MOSVIII-H TK7RE0 PL * 94 () 7. 800 50 44 U-MOSIX-H 00 TK6R4E0 PL * 5 6.4 9.7 455 0 50 58 U-MOSIX-H (A_I) TK65E0N 48 () 9 4.8 5400 4 950 8 U-MOSVIII-H (A) TKR9E0 PL * 80 () 0.9 5.8 60 45 950 96 U-MOSIX-H (A_I) TK00E0N 07 () 55.4 8800 6 500 40 U-MOSVIII-H (A) TKR9A0 PL * 40 () 00.9 4. 9500 65 500 6 U-MOSIX-H (A_I) TKEN 60 98.8 000 0 4 U-MOSVIII-H TK4EN 88 40 9.4 00 6 490 5 U-MOSVIII-H 0 TK56EN () 68 7 400 9 650 69 U-MOSVIII-H (A) TK7EN 79 () 5.4 800 0 00 0 U-MOSVIII-H (A_I) (5/5) (A) (A_I) Source Source 6

(Dual Channel) / VDSS VGSS ID (A) PD VGS = VGS = (W) 0 V 4.5 V Ciss Crss Coss Qg (nc) PS-8.8.4 TPCP805 -H 0 6.5.48 () 6 9 80 5 77.8 U-MOSVI-H (8AA).4.9 SOP-8 TPC84 -H 8.5 6 4 690 8 0 9.5 U-MOSVII-H 0 TPC8 -H 9.5 7 90 55 0 7 U-MOSVII-H.0 6.0.9 TPC87 -H 40 5..5 40 640 5 5 0 U-MOSVI-H (8AA) 5.5 4.9.68 TPC88 -H 60.8.5 57 64 640 5 90 U-MOSVI-H TPC89 -H 80..5 80 87 640 7 75 U-MOSVI-H.7 Note (): Device mounted on a glass board. t = 5 seconds. / t = 5 Top View (8AA) 4 x (Built-in schottky Barrier Diode) / SBD VDSS VGSS ID (A) PD VGS = VGS = (W) 0 V 4.5 V Ciss Crss Coss Qg (nc) SOP Advance TPCA8A -H 5 5.6 4.6 00 70 600 46 U-MOSVII-H 5 5.05 6.0 5.0 TPCA8A0 -H 0 40 58.8 4000 00 80 57 U-MOSVII-H (8D) 4.7.75 4.8 5.0 5. TPCA8A09 -H 5 70..8 5900 50 00 8 U-MOSVII-H.7.45 Top View (8D) 4 + SBD 7

Low On-Resistance / (Single N-Channel) / N VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) (/4).0 UDFN6B SSM6K504 NU 9.5 9.5 6 60 4 0 4.8 U-MOSVII-H (6B) 0 SSM6K5 NU * 5.5 8.9 0 5 50 7.5 U-MOSIX-H (6A) SSM6K54 NU * 40.5.6 7. 0 6 45 7.5 U-MOSIX-H.875 0.5 0. 0.5 5.5.0 5 SSM6K4 NU * 60 6.5 6 5 550 5 00 9. U-MOSVIII-H SSM6K6 NU * 00.5.5 69 9 40 60. U-MOSVIII-H (6B) 5 VS-8 TPCF800 0 7.5 () 8 4 500 55 5 9.5 U-MOSIV.9.5 (8A_V).5.9 TPCF8004 0 7.5 () 4 0 60 4 0 9 U-MOSVII VS-6 TPC60 0 6. () 0 8 60 50 80 9 U-MOSIV.0.8.6 (6A).4.9 5 TPC6067 0 6. () 9 60 4 0 8 U-MOSVII.8.4.. PS-8.9 TSON Advance.. 5 Note (): Device mounted on a glass board. t = 5 seconds. / t = 5 (): ID (DC) (Silicon Limit) TPCP80 5 TPCP800 40 6 TPCP8009 0 TPCP80 4 60 TPCP80 8.96 ().8 5. 505 66 5.8 U-MOSIV.96 ().8 8.4 600 75. U-MOSIV.0 ().8 9.5 50 65 65 5. U-MOSIV.96 () 5.8 77.9 58 86 U-MOSIV.0 () 0. 9. 60 0 00 6.6 U-MOSIV TPCC809 0 0 5.8 9.5 860 40 65 6 U-MOSVII TPCC8074 0 0 6. 8.5 800 88 0 5 U-MOSVII TPCC807 7 9 4.5 5.9 600 0 470 7 U-MOSVII TPN6R0 NC 4 () 9 6. 8.4 70 0 40 4 U-MOSVIII TPN4R0 NC 0 5 () 4. 6.4 70 0 40 4 U-MOSVIII TPNR50 NC 85 () 5.5 4. 0 60 650 40 U-MOSVIII TPNR0 NC 00 () 4..6 0 60 650 4 U-MOSVIII TPCC8084 6.7 9 900 98 00 7 U-MOSVII TPCC8076 7 9 4.6 6. 500 0 40 4 U-MOSVII (8B) (8A) (8B).4 0...65 Top View (6A) (6B) (8A) (8A_V) (8B) 6 6 4 4 4 8

(Single N-Channel) / N VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) (/4) 6.0 5.0 6.0.9 0.0 6. SOP Advance 5.0 5. SOP-8 4.9.68 DPAK 6.6.7 Note (): ID (DC) (Silicon Limit) TPCA808 45.8 4.8 900 50 50 4 U-MOSVII TPCA808 8 5.8 600 00 680 5 U-MOSVII TPCA8080 4 57.6. 400 40 80 6 U-MOSVII TPCA8088 0 48 6..7 500 90 000 74 U-MOSVII TPCA8087 56 70.9. 6400 60 00 9 U-MOSVII TPHR900 NC 0 () 78 0.9.4 500 0 700 75 U-MOSVIII TPCA8075 48 6.4. 500 00 970 70 U-MOSVII TPCA8078 54 70..6 6400 70 00 90 U-MOSVII TPC809 5.9 9. 800 88 0 5 U-MOSVII TPC8074 7.9 6.5 8.7 800 88 0 5 U-MOSVII TPC8086 7.9 6.4 8.5 900 90 0 6 U-MOSVII (8B) TPC807 8.9 4.7 6. 600 0 470 7 U-MOSVII TPC8080 8.9.8.4 400 40 80 6 U-MOSVII 0 TPC808 8.9. 4 600 00 680 5 U-MOSVII TPC808 8.9 4 5 900 50 50 4 U-MOSVII TPC8085 8.9 4.7 6. 600 0 470 7 U-MOSVII (8B) TPC8087 8.9..5 6400 60 00 9 U-MOSVII TPC8088 8.9.4.9 500 90 000 74 U-MOSVII TPC8084 7.9 6.9 9. 900 98 00 7 U-MOSVII (8B) TPC8075 8.9.6. 500 00 970 70 U-MOSVII (8A) TPC8076 8.9 4.9 6.5 500 0 40 4 U-MOSVII (8B) TPC8078 8.9..8 6400 70 00 90 U-MOSVII (8A) TK8P5 DA 50 7.5 55 500 550 5. 40 6 π-mosvii TKP5 D 96 50 00 8 66 5 π-mosvii (8A) (8A) (8A) (8A) (A) 5 5 4.7.7.75.05.45 4.8 5.5.0.7 6.0.0.0 6.0.6.6.. (A) (8A) (8B) 4 4 Source 9

(Single N-Channel) / N VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) (/4) 9.5 5.5 DPAK+ 6.5 TK0S04K L 0 5 8 54 40 55 00 0 U-MOSIV TK5S04N L 6 7.8 7 60 50 90 0 U-MOSVIII-H TK0S04K L 0 8 4 6 80 0 90 8 U-MOSIV TK5S04K L 5 58 0. 5 70 80 0 8 U-MOSIV (B) TK50S04K L 50 68 5.4 0 00 5 U-MOSIV 40 TK65S04K L 65 88 4.5 7.9 800 440 680 6 U-MOSIV TK65S04N L 65 07 4. 7.8 550 0 40 9 U-MOSVIII-H TK80S04K L 80 00. 4.8 440 570 90 87 U-MOSIV TK00S04N L 00 80. 4.5 5490 0 000 76 U-MOSVIII-H TKR4S04 PB 0 80.5.9 5500 490 400 0 U-MOSIX-H (A) TK8S06K L 8 5 54 80 400 40 80 0 U-MOSIV TK0S06K L 0 8 9 40 780 75 6 8 U-MOSIV TK5S06N L 5 57 8.5 6.8 855 69 490 5 U-MOSVIII-H TK0S06K L 0 58 8 0 50 0 0 8 U-MOSIV (B) TK40S06N L 60 40 88. 8 650 07 85 6 U-MOSVIII-H TK45S06K L 45 68 6.4 950 85 U-MOSIV TK60S06K L 60 88 8. 900 80 460 60 U-MOSIV TK80S06K L 80 00 5.5 7.8 400 400 650 85 U-MOSIV TK90S06N L 90 57. 5. 5400 50 60 8 U-MOSVIII-H (A) TK7S0N Z 7 50 48 470 6 60 7. U-MOSVIII-H TKS0N L * 65 8 50 850 67 70 5 U-MOSVIII-H TKS0N L 5 9.7 6. 50 45 00 U-MOSVIII-H (B) 00 TKS0N Z 5 9.7 050 40 070 8 U-MOSVIII-H TK40S0K Z 40 9 8 0 400 6 U-MOSIV TK55S0N 55 57 6.5 80 0 50 49 U-MOSVIII-H (A).4 6.0.0.0 6.0.6.6.. (A) (B) Source Source 0

(Single N-Channel) / N VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) (4/4) TO-0SIS 5.0.0.0 0.0 TK50A04K 50 4.5 4500 900 00 0 U-MOSIV (A_I) 40 TK80A04K L 80 48.4.5 9400 00 900 90 U-MOSIV (B_I) TK80A08K 75 80 40 4.5 800 770 40 75 U-MOSIV TK9A0 DA 8.5 0 400 550 5.6 40 4 π-mosvii TK5A0 D 5 5 80 050 9 80 6 π-mosvii 00 TK0A0 D 0 45 09 650 4 0 4 π-mosvii TK5A0 D 5 70 550 80 60 π-mosvii TK8A5 DA 7.5 0 500 550 5. 40 6 π-mosvii (A_I) TKA5 D 5 50 00 8 66 5 π-mosvii 50 TK7A5 D 7 45 50 650 0 4 π-mosvii TK0A5 D 0 45 00 550 4 50 55 π-mosvii TK8A0 D 00 8 45 9 600 7 40 60 π-mosvii TO-0 TK8E0K 00 8 7 4 580 5 00 U-MOSIV 5. (A).9.85 TKE5 D 50 0 50 00 8 66 5 π-mosvii 0.0.7 TO-P(N) 5.5 Heat Sink Anode Anode Cathode TK70J04K Z 70. 4500 800 50 00 U-MOSIV 40 TK75J04K Z 75 50 8450 480 060 90 U-MOSIV SK 60 50 5400 90 600 70 L -π-mosv 60 TK70J06K 70 5 6 4500 600 800 98 U-MOSIV TK40J0 D 40 60 44 400 0 80 00 π-mosvii 00 TK70J0 D 70 40 7 6950 50 450 60 π-mosvii TK0J5 D 0 60 60 400 0 50 00 π-mosvii 50 TK60J5 D 60 40 8 7000 44 400 60 π-mosvii TK50J0 D 00 50 40 5 7000 50 45 60 π-mosvii (B) (A) (A) (A_I) (B) (B_I) Source Source Source Source

(Single P-Channel) / P VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) (/4).0.9.5.8.6.8.4 UDFN6B.0 5 VS-8.9 VS-6.9 PS-8.9 5 SSM6J5 NU * SSM6J505 NU 6.5 6 700 800 800 7.6 U-MOSVI Note (): Device mounted on a glass board. t = 5 seconds. / t = 5 0 0.5 8.7 5.7 40. 400 5 50 9.5 U-MOSVII SSM6J5 NU * 0 4.5 0.5 9. 50 570 590 47 U-MOSVII SSM6J50 NU 8 6. 8. 8.4 800 90 0.8 U-MOSVI SSM6J50 NU 8 6.4 4.7 57.9 840 99 8.8 U-MOSVI SSM6J50 NU 8 0 5. 9 6.5 600 80 90 9.9 U-MOSVI SSM6J507 NU * 0 +0/ 5 TPCF805 6 TPCF808 7 TPCF807 0 +0/ 5 TPC60 0.5 0 8 50 85 0.6 U-MOSVI 6 TPC6 5.5 () 0 4 00 00 60 90 7 U-MOSVI.5 () 6 7 95 0 80 0 9 U-MOSVI.5 () 8 8 970 70 00 U-MOSVI.8. () 06 64 60 47 6 5. U-MOSVI. () 55 85 690 9 7 0 U-MOSVI TPC6 8 5.5. () 40 57 80 700 00 40 0 U-MOSV (6b) TPC60 0 +0/. 4.5 5 () 56 77 50 85 0 4 U-MOSVI (6a) TPCP805 7..68 () 7 60 80 96 40 8 U-MOSVI (8b) TPCP806 0 +0/.68 5. 5 () 44 870 50 90 9 U-MOSVI (8a) TPCP809 TPCP807 TPCP8 TPCP80 40 60 +0/.96 4.5 () 5. 76.8 80 85 0 8 U-MOSVI +0/ +0/ +0/ 8 5.0 () 8 6.8 60 8 9 44.6 U-MOSVI.96 () 7 58.4 760 60 90 7 U-MOSVI.0 () 9.5 5. 075 50 05 U-MOSVI (6b) (8a_V) (6a) (8b) 0.5 0. 0.5.875 5 5.5.5.4.4.0 Top View (6a) (6b) (8a) (8a_V) (8b) 6 6 4 4 4 Pch Pch Pch Pch Pch

(Single P-Channel) / P VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) (/4) TPCC86 9.4 8 6 60 50 0 60 6 U-MOSVI.. TSON Advance.. 5 TPCC87 0 0 6 5 990 400 4 U-MOSVI TPCC88 8 9 7.5 4 465 575 60 6 U-MOSVI TPN4R7 MD 6 4 4.7 8. 400 640 700 65 U-MOSVI TPCC8 +0/ 5 0 0 7.6 700 80 0 40 U-MOSVI TPCC80 8 7 600 40 490 8 U-MOSV TPCC804 0 +0/ 5 7 8.8.4 60 40 485 58 U-MOSVI TPCC805 +0/ 5 0 7.8 40 50 580 76 U-MOSVI (8a). 0..65 6.0 5.0 SOP Advance 5.0 5. TPHR7 MD 60 78.7.7 0900 550 00 8 U-MOSVI TPCA8 TPCA809 TPCA88 TPCA80 0 +0/ 5 +0/ 5 +0/ 5 +0/ 5 7 7 700 80 0 40 U-MOSVI 4 0 9 400 400 460 56 U-MOSVI 4 4.8 6.7 4800 800 900 5 U-MOSVI 45 4 740 80 440 90 U-MOSVI (8a) 5 5 4.7.7.75.05.45 4.8 Top View (8a) 4 Pch

(Single P-Channel) / P (/4) VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) TPC89 +0/ 5 9.9 8 650 60 00 9 U-MOSVI TPC85 +0/ 5 0.9 7 580 40 490 64 U-MOSVI TPC8 +0/ 5.9 9.5 940 460 50 68 U-MOSVI SOP-8 TPC86 TPC87 0 +0/ 5.9 0 4 400 400 460 56 U-MOSVI +0/.9 6.5 8.9 800 60 70 9 U-MOSVI 5.0 6.0.9 TPC88 +0/ 5 6.9 5 6.9 4800 800 900 5 U-MOSVI (8a) 5.5 4.9.68 TPC80 TPC84 +0/ 5 +0/ 5 8.9. 4. 740 80 440 80 U-MOSVI 5.9 5 66 890 00 0 0 U-MOSVI.7 TPC8 TPC8 40 +0/ 5 +0/ 5 7.9 5 580 90 0 4 U-MOSVI 9.9 5 8 900 50 40 64 U-MOSVI TPC84 +0/ 5.9 8 0 4750 540 60 04 U-MOSVI TJ0S04M L +0/ 0 7 44 6 90 90 40 9 U-MOSVI TJ0S04M L +0/ 4. 850 80 50 7 U-MOSVI TJ40S04M L 40 +0/ 40 68 9. 440 40 50 8 U-MOSVI 9.5 5.5 DPAK+ 6.5.4 TJ60S04M L TJ80S04M L TJ8S06M L TJ5S06M L TJ0S06M L 60 +0/ +0/ +0/ +0/ +0/ 60 90 6. 9.4 650 570 780 5 U-MOSVI 80 00 5. 7.9 7770 740 970 58 U-MOSVI 8 7 04 0 890 60 00 9 U-MOSVI 50 6 770 0 80 6 U-MOSVI 0 68.8 8 950 70 60 80 U-MOSVI (b) 6.0.0.0 6.0.6.6.. TJ50S06M L +0/ 50 90.8 7.4 690 40 560 4 U-MOSVI TJ60S06M L +0/ 60 00. 4.5 7760 50 690 56 U-MOSVI TJ5S0M 00 +0/ 5 75 0 00 5 90 69 U-MOSVI (a) (a) (b) (8a) 4 Source Source Pch Pch Pch 4

(Single P-Channel) / P VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) (4/4) DPAK 6.0 0.0 6. TJ5P04M 40 5 9 6 48 00 0 70 6 U-MOSVI (a).0.0 6.0 6.6.7.6.6.. TO-0SIS 0.0 TJ9A0M 9 9 70 900 0 50 47 U-MOSVI 5.0 00 (a_i).0.0 TJA0M 4 0 00 5 90 69 U-MOSVI (a) (a_i) Source Source Pch Pch 5

(Dual Channel / Complementary) / / Polarity VDSS VGSS VGS = 0 V VGS = 6 V VGS =.5 V VGS =.8 V Ciss Crss Coss Qg (nc) VS-8 TPCF805 4.5 58 8 65 680 85 08 9. U-MOSVI.9.5 P-ch x (8aa).5.9 TPCF806 0 +0/..5 7 0 90 65 85 0 U-MOSVI 5 N-ch x TPCP806 0 6 TPCP804 0 4..48 () 4 5 60 47 44 5.8 U-MOSVII.48 () 50 77 90 45 6.6 U-MOSIV (8AA) TPCP807 40 5.77 () 6. 6.8 505 66 5.8 U-MOSIV (8BB) TPCP80 8.8.48 () 46 60 90 640 00 40 0 U-MOSV (8bb) PS-8 P-ch x TPCP806 4 TPCP805 6.48 () 58 8 65 680 85 08 9. U-MOSVI.48 () 0 4 500 5 50.5 U-MOSVI (8aa).8.4.9 N-ch + P-ch TPCP8404 TPCP8405 TPCP8407 TPCP8406 0 4 0 4 0 6.5 0 6 40 5 40 +0/ 4 40 6 40 5.48 () 50 80 90 45 60 4.6 U-MOSIV.48 () 50 80 50 0 70 U-MOSV.48 () 6 9 80 5 77.8 U-MOSVI-H.48 (). 4 075 90 4 4. U-MOSVI.77 () 6. 6.8 505 66 5.8 U-MOSIV.77 () 56.8 8. 80 85 0 8 U-MOSVI.48 () 6 850 40 4.7 U-MOSVI-H.48 () 4. 5.4 05 66 4. U-MOSVI (8Aa) (8Bb) (8Aa).4 6.0.9 SOP-8 4.9.68 N-ch + P-ch TPC8407 TPC8408 0 9.5 7 90 55 0 7 U-MOSVII-H 0 7.4.5 9 650 60 00 9 U-MOSVI 40 6..5 6 850 40 4 U-MOSVI-H 40 5.. 5 05 5 6 U-MOSVI (8Aa) 5.5.7.0 Note (): Device mounted on a glass board. t = 5 seconds. / t = 5 Top View (8AA) (8BB) (8aa) (8bb) (8Aa) 4 4 4 4 4 x x Pch x Pch x + Pch (8Bb) 4 + Pch 6

Small- / (Semi-Power Type : Single N-Channel) / : N (/) VDSS VGSS VGS = 0 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).0 CST SOT-88 0.8 SSMK56 CT 8 5 00 480 840 55 6 6 U-MOSVII-H 0 SSMK56 ACT 8.4 5 00 480 840 55 6 6 U-MOSVII-H (B_S) 0. 0.9 0.9 0.5 0.5 CSTB. 8 SSMK59 CTB * 40 8 68 40 0 7.5 6. U-MOSVII-H (B_S) 0.5 0.5 0.5 0.5. VESM SOT-7. SSMK56 MFV 0 8 5 00 480 840 55 6 6 U-MOSVII-H (B_S).5 5 5.0 WCSP6C.5 SSM6K78 G * 8 7.6 8. 47.4 4 600 0 50 5.4 U-MOSVII-H (6A_W) 0.5 SSM SOT-46.6 SSMK56 FS * 0 8 5 00 480 840 55 6 6 U-MOSVII-H (B_S).4.6 5 ES6 SOT-56 SSM6K04 FE 0 6 64 4 07 95 9 5.4 U-MOSIII 0 SSM6K FE 0. 47 59 8 8 50 85 98 U-MOSIII 0. 5.6.6 5 SSM6K08 FE.9 77 96 8 4.9 U-MOSIII 0 SSM6K0 FE. 85 0 45 70 47 56 U-MOSIII SSM6K7 FE 40.8 08 48 400 0 7.5 6. U-MOSVII-H (6B).5 Top View (B_S) (6A_W) (6B) A B C 6 A B C 7

(Semi-Power Type : Single N-Channel) / : N (/) VDSS VGSS VGS = 0 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).4.0...8. UDFN6B SSM6K504 NU 9.5 9.5 6 60 4 0 4.8 U-MOSVII-H (6B) 0 SSM6K5 NU * 5.5 8.9 0 5 50 7.5 U-MOSIX-H (6A) SSM6K54 NU * 40.5.6 7. 0 6 45 7.5 U-MOSIX-H.0 5 SSM6K4 NU * 60 6.5 6 5 69 550 5 00 9. U-MOSVIII-H (6B) SSM6K6 NU * 00.5.5 69 9 40 60. U-MOSVIII-H SSMK6 TU * 8 57 68 89 9 77 7 5 U-MOSVII-H (C_S) SSMK TU 0 6 04 95 9 5.4 U-MOSIII 0 SSMK TU 0. 48 6 9 40 400 60 68 5.9 U-MOSIII UFM.0 UF6.0 SOT-F.9 TSOP6F SSMK TU 0 4. 8 4 66 00 50 6.6 U-MOSIII SSMK7 TU 67 86 8 4.5 U-MOSIII SSMK6 TU. 00 5 45 4 U-MOSIII 0 SSMK9 TU.5 74 90 4 70 47 56 U-MOSIII SSMK TU 6 7.6 4.5 450 77 0 0. U-MOSIV (A_S) SSMK65 TU * 00 440 50 5 70 6 π-mosv (C_S) 60 SSMK4 TU * 6 6 5 69 550 5 00 9. U-MOSVIII-H (B_S) SSMK6 TU * 00.5 69 9 40 60. U-MOSVIII-H SSM6K40 TU 0 4. 8 4 66 050 60 75 6.8 U-MOSIII SSM6K404 TU 0 0 55 70 00 47 400 60 68 5.9 U-MOSIII SSM6K405 TU 0 6 64 4 07 95 9 5.4 U-MOSIII SSM6K406 TU 0 4.4 5 8.5 490 0.4 U-MOSIV SSM6K407 TU 60 00 440 50 5 70 6 π-mosv SSMK44 R * 8 7 9 9 5 5 7 U-MOSVII-H 0 SSMK45 R * 8 4 45 74 08 40 40 85.6 U-MOSVI SSMK6 R * 90 6 8 6.7 U-MOSVII-H SSMK9 R.5 6 70 89 8 4.5 U-MOSIII SSMK4 R 0 4 56 7 09 00 40. U-MOSVII-H SSMK R 6 8 4 46 8 77.4 U-MOSVII-H (A_S) SSMK5 R 6 8 56 40 0 60.7 U-MOSVII-H (B_S) SSMK7 R * 8 50 76 00 0 7. U-MOSIV (ZC_) SSMK9 R * 40 98 8 90 0 7.5 6. U-MOSVII-H (B_S) SSMK65 R SSMK8 R 60.5 07 45 5 7 U-MOSIV (B_S) (6B) (B_S) 00 440 50 5 70 6 π-mosv (C_S) SSMK4 R * 6. 6 5 69 550 5 00 9. U-MOSVIII-H SSMK6 R * 00.5. 69 9 40 60. U-MOSVIII-H SSM6K809 R ** 60 6.5 6 5 69 550 5 00 9. U-MOSVIII-H (B_S) (6B) 0.5 0. 0.5.875 5 5.5.9 5.9. 0.9.5.9 SSM6K80 R ** 00.5.5 69 9 40 60. U-MOSVIII-H **: Under Development / Top View (A_S) (B_S) (C_S) (6A) (6B) (ZC_) 6 6 + ZD 8

(Semi-Power Type : Single P-Channel) / : P (/) VDSS VGSS VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) CSTC SSMJ64 CTC * 0 70 560 890 0 50 7.5 U-MOSVII 0. 0.8 SSMJ65 CTC * 0 500 700 070 550 48 4.6 8.9 U-MOSVII (c_s) 0.5 0.5 0.5 0..0 CST SOT-88 0.8 SSMJ56 ACT 8.4 90 480 660 900 00 0 6.6 U-MOSVI (c_s) 0. 0.9 0.9 0.5 0.5 CSTB. 8 SSMJ46 CTB 8 0 78 50 90 44 4.7 U-MOSVI (b_s) 0.5 0.5 0.5 0.5. VESM SOT-7. SSMJ56 MFV 8 90 480 660 900 00 0 6.6 U-MOSVI (b_s).5 5 5.0 WCSP6C.5 SSM6J77 G 5.6 5 47.5 870 0 50 9.8 U-MOSVI (6a_W) 0.5.6.0 ES6 SOT-56.6 UDFN6B 5.0 5 SSM6J6 FE 8 4.8 9. 56 88. 040 80 00.7 U-MOSVI SSM6J FE 8.6 0 78 50 90 44 4.7 U-MOSVI SSM6J5 FE 8.4 59 79 04 54 60 60 75 U-MOSVI SSM6J FE 8 4 4 49 65.4 94 970 09 7 4. U-MOSVI SSM6J07 FE.4 49 7 0 9 U-MOSII 0 SSM6J4 FE.6 57 77.6 49.6 560 65 80 7.9 U-MOSVI SSM6J5 NU * 0 0.5 8.7 5.7 40. 400 5 50 9.5 U-MOSVII SSM6J505 NU 6.5 6 0 700 800 800 7.6 U-MOSVI SSM6J5 NU * 0 4.5 0.5 9. 50 570 590 47 U-MOSVII SSM6J50 NU 8 6. 8. 8.4 6 800 90 0.8 U-MOSVI SSM6J50 NU 8 6.4 4.7 57.9 89.6 840 99 8.8 U-MOSVI SSM6J50 NU 8 0 5. 9 6. 600 80 90 9.9 U-MOSVI SSM6J507 NU * 0 +0/ 5 0.5 8 50 85 0.6 U-MOSVI (6b) (6b).875.5 0. 0.5 0. 0.5 5 5 5.5 Top View (b_s) (c_s) (6a_W) (6b) A B C 6 A B C Pch Pch Pch Pch 9

(Semi-Power Type : Single P-Channel) / : P (/) VDSS VGSS VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).. UFM.0 UF6.0 USM SOT- SSMJ TU 6 5.4 7 9 9 700 55 55 U-MOSVI SSMJ5 TU 8 0 80 60 70 40 4.6 U-MOSVI SSMJ4 TU 8. 9 68 40 90 44 4.7 U-MOSVI SSMJ0 TU 8 4.4 5.8 4. 6. 800 90 0.8 U-MOSVI SSMJ TU 8 5.5 9.8 9.7 56 88.4 840 99 8.8 U-MOSVI SSM6J50 TU 0.5 64 00 800 0 60 U-MOSIV SSM6J4 TU 8 4 4.7 5.4 67.8 99.6 840 99 8.8 U-MOSVI SSM6J44 TU 8 6.5 6 6 54 650 90 0. U-MOSVI SSM6J40 TU 5 80 45 80 5. U-MOSII SSM6J40 TU 0. 9 0.9 U-MOSIII SSM6J40 TU.5 45 70 90 0 6 U-MOSIII SSMJ TU. 790 86 4 5 U-MOSII (b_s) (6b).9 5.9.0. SSMJ8 TU 0.4 480 7 0 9 U-MOSII (b_s).9 SSMJ7 TU 5 80 45 80 U-MOSII.4.5 SOT-F.9 S-Mini SOT-46 SSMJ8 R 0 6 0. 7.9 45. 400 5 50 9.5 U-MOSVII SSMJ7 R 8.9 9 68 40 90 44 4.6 U-MOSVI SSMJ R 8 4 55 75 00 50 60 60 75 U-MOSVI SSMJ8 R 8 6 9.8 9.7 56 88.4 840 99 8.8 U-MOSVI SSMJ55 R * 0 6 0. 8.8 5. 00 94 6.6 U-MOSVII SSMJ58 R * 0 6 5..8 49. 8 5 8.5 U-MOSVII SSMJ4 R SSMJ40 R 0 4 05 6 80 40 55 5.9 U-MOSVI +0/ 5 4 7 86 49 75 97 6. U-MOSVI SSMJ R 6 50 7 44 560 65 80 8. U-MOSVI SSMJ56 R * SSMJ5 R * SSMJ5 F 60 +0/ 60 400 0 0 8. U-MOSVI +0/.5 64 84 660 50 70 5. U-MOSVI 8 50 79 70 40 4.6 U-MOSVI SSMJ5 F * 6 99 44 0 9 5. U-MOSVI (b_s) (b_s)..4 0.9.0.9.5 SSMJ5 F * 0 +0/ 5 74 59 0.4 U-MOSVI.8. TSOP6F SSM6J80 R * +6/ 8 6.5.5 9.7 56 88.4 840 99 8.8 U-MOSVI (6b).5.9 SSM6J808 R ** 40 +0/ 7.5 54 05 66 4. U-MOSVI (6a) **: Under Development / Top View (b_s) (6a) (6b) 6 6 Pch Pch Pch 0

(Semi-Power Type: Dual Channel/Complementary) / : / Polarity VDSS VGSS VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) ES6 SOT-56 N-ch x SSM6N56 FE 0 8 0.5 5 00 480 840 55 6 6 U-MOSVII-H (6BB) P-ch x SSM6P4 FE 8 0.5 00 440 670 040 0 0 8.76 U-MOSV (6bb) 0. 5.6.6 5 N-ch + P-ch SSM6L4 FE 0 0 0.0 0 450 600 90 5 U-MOSIII 8 0.5 00 440 670 040 0 0 8.76 U-MOSV (6Cb).5.0 UDFN6 SOT-8 SSM6N6 NU * 0 8 4 45 74 08 40 40 85.6 U-MOSVII-H SSM6N55 NU 4 64 80 0 5.5 U-MOSVII-H N-ch x SSM6N57 NU 0 4 9. 5 8 0 0 5. U-MOSVII-H SSM6N58 NU 4 84 7 80 9 4.8 U-MOSVII-H P-ch x SSM6P47 NU 8 4 95 5 70 4 90 44 4.6 U-MOSVI SSM6P49 NU 4 56 76 57 480 76 90 6.74 U-MOSVI (6BB) (6bb) 0. 5..0 5 UF6.0 N-ch + P-ch N-ch x P-ch x N-ch + P-ch SSM6L6 NU 0 4 SSM6L6 NU ** 0 4 0 8 4 45 74 08 40 40 85.6 U-MOSVII-H 4 56 76 57 480 76 90 6.74 U-MOSVI 48 () 80 () 80 0 5.5 U-MOSVII-H 80 40 55 5.9 U-MOSVII-H SSM6N6 TU 8 85 98 0 7 77 7 5 U-MOSVII-H 0 SSM6N9 TU 0.6 9 9 90 47 60 7 45 7.5 U-MOSIII SSM6N40 TU 0.6 8 80 7 4 5. U-MOSIII SSM6P54 TU 8. 8 50 555 9 48 7.7 U-MOSIV SSM6P9 TU 8.5 94 40 50 6.4 U-MOSIII SSM6P40 TU 0.4 40 0.9 U-MOSIII SSM6L9 TU SSM6L TU 0 0.6 9 9 90 47 60 7 45 7.5 U-MOSIII 8.5 94 40 50 6.4 U-MOSIII 0 45 80 45 4 U-MOSIII 60 40 8 4 5 U-MOSIII (6Bb) (6Cc) (6BB) (6bb) (6Bb) (6Cc).875 0.9 5.9 SSM6L40 TU 0.6 8 80 7 4 5. U-MOSIII 0.4 40 0.9 U-MOSIII (6Bb) TSOP6F SSM6N8 R *.5.5 54 4 7 06.6 U-MOSVIII-H (6CC).8. N-ch x 00.5.9 SSM6N85 R *.4 4 80 90 6 08. U-MOSVIII-H (6BB) **: Under Development / 6 Top View (6BB) (6CC) (6bb) (6Bb) (6Cc) (6Cb) 6 6 6 6 6 Q Q Q Q Q Q Q Q Q Q Q Q x x Pch x + Pch + Pch + Pch

(Semi-Power Type: Built-in Diode) / : Polarity VDSS VGSS VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) UDFN6 SOT-8 N-ch + SBD SSM6H9 NU 40 98 8 90 0 7.5 6. U-MOSVII-H (6SB) 0..0 5.875 0.9.0 5 P-ch + SBD SSM6G8 NU 8 4 85 6 70 40 4.6 U-MOSVI (6Sb). UFV.0 SSM5H08 TU 0.5 60 0 5 7 4 U-MOSIII N-ch + SSM5H0 TU.4 450 06 5 8 U-MOSIII SBD SSM5H TU 0.6 8 80 7 4 5. U-MOSIII (5BS) SSM5H6 TU.9 77 96 8 4.9 U-MOSIII SSM5G0 TU P-ch + 60 40 0 70 0 U-MOSII SBD SSM5G09 TU 8.5 0 00 550 55 70 U-MOSIII SSM5G TU 0.4 40 0.9 U-MOSIII (5bS) N-ch + Switching SSM5H90 ATU 0 0.4 65 89 00 40. U-MOSVII-H (5BW) Diode.9 5 5 Top View (5BS) (5bS) (5BW) (6SB) (6Sb) 4 5 4 5 4 6 6 + SBD Pch + SBD + Switching Diode + SBD Pch + SBD

(Semi-Power Type: Built-in Zener Diode) / : ZD Polarity VDSS VGSS VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) UFM..0 N-ch + Zener SSMH7 TU * 4 80 95 9 8 40 U-MOSIV (ZC_).9 Top View (ZC_) + ZD

(Small-Signal Type: Single N-Channel) / : N (/) VDSS VGSS (Ω) VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).0..6 CSTC CST SOT-88 0.8 0.8 VESM SOT-7. SSM SOT-46.6 5 SSMK6 CTC * 0 0.. 4 5.6 4. 5.5 U-MOSIII 0 SSMK5 CTC 0 0.5..6.4. 8 5 6 U-MOSIII (C_S) SSMK5 ACTC * 0 0..6 6.5 6.5 8 U-MOSIII SSMK7 CTC * 60 0.5 4.7 U-MOSVII-H SSMK6 CT 0 0. 0. 4 5 9. 4.5 9.8 π-mosvi SSMK5 CT 0 0 0.8 0. 4 8 9.. 9.5 π-mosvi SSMK7 CT 0 0. 0...0 4.05 5.6 4. 5.5 U-MOSIII (C_S) SSMK5 ACT 0 0. 0..6 6.5 6.5 8 U-MOSIII SSMK7 KCT * 60.75 6. 5.5 0.9 U-MOSVII-H SSMK6 FV 0 0. 0.5 4 5 9. 4.5 9.8 π-mosvi SSMK5 MFV 0 0.8 0.5 4 8 9.. 9.5 π-mosvi SSMK5 AMFV * 0 0.5 0.5..6.4. 8 5 6 U-MOSIII (C_S) 0 SSMK7 MFV 0 0.5 0.5..0 4.05 5.6 4. 5.5 U-MOSIII SSMK6 MFV 0 0.5 6 5.4.6 7.. U-MOSIII SSMK56 MFV 8 0.5 0.5 0. 8 4 55 6 6 U-MOSVII-H (B_S) SSMK5 AMFV 0. 0.5.6 6.5 6.5 8 U-MOSIII 0 SSMK44 MFV 0. 0.5 4 7 8.5 5. 9.4 π-mosvi (C_S) SSMK6 FS 0 0. 0. 4 5 9. 4.5 9.8 π-mosvi SSMK5 FS 0 0.8 0. 4 8 9.. 9.5 π-mosvi SSMK7 FS 0 0. 0...0 4.05 5.6 4. 5.5 U-MOSIII (C_S) 0 SSMK5 AFS * 0 0.5 0.5..6.4. 8 5 6 U-MOSIII SSMK6 FS 0 0.5 6 5.4.6 7.. U-MOSIII SSMK56 FS 8 0.5 0.5 0. 8 4 55 6 6 U-MOSVII-H (B_S) SSMK5 AFS 0. 0..6 6.5 6.5 8 U-MOSIII 0 SSMK44 FS 0. 0.5 4 7 8.5 5. 9.4 π-mosvi SSMK7 CFS * 0..7 U-MOSVII-H 60 SSMK7 KFS * 0. 0.5.75 6. 5.5 0.9 U-MOSVII-H (C_S).5.4 0.5 0.5 0.5 0.9 0.9 0. 5 0. 0. 0.5 0.5 5 Top View (B_S) (C_S) 4

(Small-Signal Type: Single N-Channel) / : N (/) VDSS VGSS (Ω) VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) ES6 SOT-56 0. 5.6 SSM6K4 FE 0 5 0.8 45 4 U-MOSIII (6B).5.6 5 UFM. SSMK6 TU 0 0 6 5.4.6 7.. U-MOSIII (C_S).9.0. USM SOT- SSMK6 FU 0 0 0. 0.5 4 5 9. 4.5 9.8 π-mosvi SSMK5 AFU 0. 0.5.6 6.5 6.5 8 U-MOSIII SSMK48 FU 0 0. 0.5. 5.4 5. 7.8.4 U-MOSIII SSMK09 FU 0.5. 0 7 6 π-mosvi SSMK7 FU 50 7 0. 0.5 0 40 7 7 π-mosv SSMK700 CFU * 0..7 U-MOSVII-H 60 SSMK700 KFU * 0.5.75 6. 5.5 0.9 U-MOSVII-H (C_S).9.0 SOT TN700 AK * 0. 0. 4.7 U-MOSVII-H.4 60 (C_S).0.9 TN700 BK * 0..75 6. 5.5 0.9 U-MOSVII-H S-Mini SOT-46 SSMK5 F 0 0. 0. 4 7 7.8.6 8.8 π-mosvi.5 (C_S).4.0.9.5 SSMK700 KF * 60.75 6. 5.5 0.9 U-MOSVII-H Top View (C_S) (6B) 6 5

(Small-Signal Type: Single P-Channel) / : P VDSS VGSS (Ω) VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) CSTC 0. 0.8 SSMJ5 CTC * 0 0.5.4..9 4 6 U-MOSVII (c_s) 0.5 0.5 0.5 0..0 CST SOT-88 0.8 SSMJ5 CT 0 0. 0. 8. 6.5 π-mosvi SSMJ5 CT 0 0. 0. 9..5 8.6 π-mosvi (c_s) 0. 0.9 0.9 0.5 0.5..6 VESM SOT-7. SSM SOT-46.6 UFM 5 SSMJ6 FV 0 0. 0.5 8 45.7 0 π-mosvi SSMJ5 MFV 0 0. 0.5 8. 6.5 π-mosvi (c_s) SSMJ5 AMFV * 0 0.5.4..9 4 6 U-MOSVII SSMJ56 MFV 8 0.5 0.9 8 6 0.9 00 0 6.6 U-MOSVI (b_s) SSMJ5 FV 0 0. 0.5 9..5 8.6 π-mosvi (c_s) SSMJ5 FS 0 0. 0. 8. 6.5 π-mosvi SSMJ5 AFS * 0 0.5 0.5.4..9 4 6 U-MOSVII (c_s) SSMJ6 FS 8 0. 0.5..7.6 4 6. 0.. U-MOSIII SSMJ5 FS 0 0. 0. 9..5 8.6 π-mosvi.4.5 5 5. SSMJ6 TU 8 0...7.6 4 6. 0.. U-MOSIII (c_s).9.0 USM SOT- SSMJ6 FU 0 0. 0.5 8 45.7 0 π-mosvi. S-Mini SOT-46 SSMJ5 FU 0. 0.5 9..5 8.6 π-mosvi 0 SSMJ09 FU 0. 0.5 4. π-mosvi SSMJ5 F 0 0. 0. 9..5 8.6 π-mosvi (c_s) (c_s).9.5 SJ68 0. 0. 7 8.4.0.9.5 SSMJ68 F * 60 (b_s) +0/.9 8 5.5 U-MOSVI Top View (b_s) (c_s) Pch Pch 6

(Small-Signal Type: Dual Channel/Complementary) / : / (/) Polarity VDSS VGSS (Ω) VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).6 ESV SOT-55 N-ch x SSM5N6 FE 0 0 0. 0.5 4 5 9. 4.5 9.8 π-mosvi SSM5N5 FE 0 0. 0.5 4 7 7.8.6 8.8 π-mosvi (5CC).5 0. 5.6.6 ES6 SOT-56.6 5 5 P-ch x SSM5P6 FE 0 0. 0.5 8 45.7 0 π-mosvi (5cc) SSM6N6 FE 0 0. 0.5 4 5 9. 4.5 9.8 π-mosvi SSM6N5 FE 0 0.8 0.5 4 8 9.. 9.5 π-mosvi SSM6N5 AFE * 0 0.5 0.5..6.4. 8 5 6 U-MOSIII 0 SSM6N7 FE 0 0.5 0.5..0 4.05 5.6 4. 5.5 U-MOSIII N-ch x SSM6N6 FE 0 0.5 6 5.4.6 7.. U-MOSIII SSM6N56 FE * 8 0.5 0.5 0. 8 4 55 6 6 U-MOSVII-H (6BB) SSM6N5 AFE 0. 0.5.6 6.5 6.5 8 U-MOSIII 0 SSM6N44 FE 0. 0.5 4 7 8.5 5. 9.4 π-mosvi SSM6N700 BFE 60 0. 0.5. 7.9.6 U-MOSIV SSM6P5 AFE * 0 0.5 0.5.4..9 4 6 U-MOSVII P-ch x SSM6P6 FE 8 0. 0.5..7.6 4 6. 0.. U-MOSIII N-ch + P-ch SSM6P5 FE 0 0. 0.5 8. 6.5 π-mosvi SSM6P5 FE 0 0. 0.5 9..5 8.6 π-mosvi SSM6L5 FE SSM6L6 FE 0 0 0.8 0.5 4 8 9.. 9.5 π-mosvi 0 0. 0.5 8. 6.5 π-mosvi 0 0 0.5 6 5.4.6 7.. U-MOSIII 8 0. 0.5..7.6 4 6. 0.. U-MOSIII (6CC) (6CC) (6cc) (6Cc).5 0. 5. USV SOT-5 N-ch x SSM5N6 FU 0 0 0. 0. 4 5 9. 4.5 9.8 π-mosvi SSM5N5 FU 0 0. 0. 4 7 7.8.6 8.8 π-mosvi (5CC).9 P-ch x SSM5P5 FU 0 0. 0. 9..5 8.6 π-mosvi (5cc) Top View (5CC) (5cc) (6BB) (6CC) (6cc) 6 6 6 Q Q Q Q Q Q Q Q Q Q x Pch x x x x (6Cc) 6 Q Q + Pch 7

(Small-Signal Type: Dual Channel/Complementary) / : / (/) Polarity VDSS VGSS (Ω) VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).. UF6.0 US6 SOT-6 N-ch x SSM6N6 TU 0 6 5.4.6 7.. U-MOSIII (6CC) 0 SSM6N6 TU 8 0.085 0.098 0. 77 7 5 U-MOSVII-H (6BB) SSM6N4 TU 0 5 0.8 45 4 U-MOSIII P-ch x SSM6P6 TU 8 0...7.6 4 6. 0.. U-MOSIII (6cc) 0 5 0.8 45 4 U-MOSIII SSM6L TU N-ch + 8 4 5 U-MOSIII P-ch 0 0 6 5.4.6 7.. U-MOSIII SSM6L6 TU 8 0...7.6 4 6. 0.. U-MOSIII (6Cc) SSM6N6 FU 0 0. 0. 4 5 9. 4.5 9.8 π-mosvi SSM6N5 FU 0 0.8 0. 4 8 9.. 9.5 π-mosvi SSM6N5 AFU * 0 0 0.5 0.85..6.4. 8 5 6 U-MOSIII SSM6N7 FU 0 0.5 0...0 4.05 5.6 4. 5.5 U-MOSIII SSM6N4 FU 0 0. 6 5.4.6 7.. π-mosvi SSM6N5 AFU 0. 0..6 6.5 6.5 8 U-MOSIII N-ch x (6CC) SSM6N44 FU 0. 0. 4 7 8.5 5. 9.4 π-mosvi 0 SSM6N48 FU 0. 0.. 5.4 5. 7.8.4 U-MOSIII SSM6N09 FU 0.. 0 7 6 π-mosvi SSM6N7 FU 50 7 0. 0. 0 40 7 7 π-mosv SSM6N700 CFU * 0.8.7 U-MOSVII-H 60 SSM6N700 KFU * 0. 0.85.75 6. 5.5 0.9 U-MOSVII-H SSM6P5 FU 0 0. 0. 8. 6.5 π-mosvi P-ch x SSM6P5 AFU * 0 0.5 0.85.4..9 4 6 U-MOSVII (6cc) N-ch + P-ch SSM6P5 FU 0 0. 0. 9..5 8.6 π-mosvi SSM6L09 FU SSM6L5 FU 0 0.. 0 7 6 π-mosvi 0 0. 0. 4. π-mosvi 0 0 0.8 0. 4 8 9.. 9.5 π-mosvi 0 0. 0. 8. 6.5 π-mosvi (6Cc).9.9 5 6 Top View (6BB) (6CC) (6cc) (6Cc) 6 6 6 Q Q Q Q Q Q Q Q x x x x Pch 8

Mid-High Voltage MOSFETs / MOSFET DTMOS / DTMOS (Single N-Channel) / N (/5) 0.0 8.0 6. DFN8x8 8.0 5 DPAK 6.6.7 TK0V60 W VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) 0 9.7 8. 0.8 700. 0 0 DTMOSIV TKV60 W 0.5 04 0. 890.8 5 DTMOSIV TK6V60 W 0 5.8 9 0.9 50 4 5 8 DTMOSIV TK6V60W5 0 5.8 9 5 50 4 DTMOSIV(HSD) TK0V60 W 0 0 56 680 7 40 48 DTMOSIV TK0V60W5 600 0 0 56 0.9 800 5.5 55 DTMOSIV(HSD) TK5V60 X 0 5 80 0.00 6 60 40 DTMOSIV-H TK5V60X5 0 5 80 0.00 6 60 60 DTMOSIV-H(HSD) TKV60 W 0 40 0.098 000 9.5 70 86 DTMOSIV TKV60W5 0 40 0.09 000 9.5 70 05 DTMOSIV(HSD) TKV60 X 0 40 0.098 000 7 70 65 DTMOSIV-H TK4V65 W 0.7 9 0.8 00 4 5 5 DTMOSIV TK7V65 W 0 7. 56 0. 800 7 40 45 DTMOSIV TKV65X5 650 0 80 400 6 60 50 DTMOSIV-H(HSD) TK8V65 W 0 7.6 40 0. 000 8 70 75 DTMOSIV TK8V65W5 0 7.6 40 000 8 70 90 DTMOSIV(HSD) TK0P50 W 0 9.7 80 700. 0 0 DTMOSIV 500 TKP50 W 0.5 00 890.8 5 DTMOSIV TK5P60W5 0 4.5 60 0.99 70.5 DTMOSIV(HSD) TK5P60 W 0 5.4 60 0.9 80.5 0 DTMOSIV TK6P60 W 0 6. 60 90.7 DTMOSIV TK560P60 Y 0 7 60 6 80.5 8 4.5 DTMOSV TK7P60 W 0 7 60 490.7 5 DTMOSIV TK7P60W5 0 7 60 7 490.7 6 DTMOSIV(HSD) 600 TK8P60 W 0 8 80 570.5 6 8.5 DTMOSIV TK8P60W5 0 8 80 6 590.7 6 DTMOSIV(HSD) TK0P60 W 0 9.7 80 700. 0 0 DTMOSIV TK80P60 Y 0 9.7 80 0.8 590.5 0 DTMOSV TKP60 W 0.5 00 890.8 5 DTMOSIV TK90P60 Y 0.5 00 0.9 70.5 6 5 DTMOSV TK5P65 W 0 5. 60. 80.5 0 DTMOSIV TK6P65 W 0 5.8 60.05 90.7 DTMOSIV TK7P65 W 0 6.8 60 490.7 5 DTMOSIV TK560P65 Y 0 7 60 6 80.5 8 4.5 DTMOSV TK8P65 W 650 0 7.8 80 7 570.5 6 6 DTMOSIV TK9P65 W 0 9. 80 6 700. 0 0 DTMOSIV TK80P65 Y 0 9.7 80 0.8 590.5 0 DTMOSV TKP65 W 0. 00 4 890.8 5 DTMOSIV TK90P65 Y 0.5 00 0.9 70.5 6 5 DTMOSV (5A) (A) 7..0.0.0.0 6.0....0.0 6.0.6.6 4.5.6.0 (A) (5A) * 5 Source Source Source,4 (*) Notice : Please use the source pin for gate input signal return. Make sure that the main current flows into the source pins. (*) 9

(Single N-Channel) / N 8.8 5. 7. 4.. DPAK 0.5 IPAK 6.65 TO-0SIS 5.0.0.0 0.0 4.46 TK6G60 W VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) 0 5.8 0 0.9 50 4 5 8 DTMOSIV TK6G60W5 600 0 5.8 0 0. 50 4 DTMOSIV(HSD) TK0G60 W 0 0 65 0.55 680 7 40 48 DTMOSIV TK4G65 W 0.7 0 0.5 00 4 5 5 DTMOSIV 650 TK4G65W5 0.7 0 0. 00 4 0 DTMOSIV(HSD) TK5Q60 W 0 5.4 60 0.9 80.5 0 DTMOSIV TK6Q60 W 0 6. 60 90.7 DTMOSIV TK7Q60 W 0 7 60 490.7 5 DTMOSIV 600 TK8Q60 W 0 8 80 570.5 6 8.5 DTMOSIV TK0Q60 W 0 9.7 80 700. 0 0 DTMOSIV TKQ60 W 0.5 00 890.8 5 DTMOSIV TK5Q65 W 0 5. 60. 80.5 0 DTMOSIV TK6Q65 W 0 5.8 60.05 90.7 DTMOSIV TK7Q65 W 0 6.8 60 490.7 5 DTMOSIV 650 TK8Q65 W 0 7.8 80 7 570.5 6 6 DTMOSIV TK9Q65 W 0 9. 80 6 700. 0 0 DTMOSIV TKQ65 W 0. 00 4 890.8 5 DTMOSIV TK0A50 W 0 9.7 0 0.8 700. 0 0 DTMOSIV TKA50 W 500 0.5 5 0. 890.8 5 DTMOSIV TK9A50 W 0 8.0 0.9 50 4 5 8 DTMOSIV TK5A60W5 0 4.5 0 70.5 DTMOSIV(HSD) TK5A60 W 0 5.4 0 0.9 80.5 0 DTMOSIV TK6A60 W 0 6. 0 5 90.7 DTMOSIV TK560A60 Y 0 7 0 6 80.5 8 4.5 DTMOSV TK7A60 W 0 7 0 490.7 5 DTMOSIV TK7A60W5 0 7 0 490.7 6 DTMOSIV(HSD) TK8A60 W 0 8 0 570.5 6 8.5 DTMOSIV TK8A60W5 0 8 0 4 590.7 6 DTMOSIV(HSD) TK0A60 W 0 9.7 0 0.8 700. 0 0 DTMOSIV TK0A60W5 0 9.7 0 5 70 0 5 DTMOSIV(HSD) TK80A60 Y 600 0 9.7 0 0.8 590.5 0 DTMOSV TKA60 W 0.5 5 0. 890.8 5 DTMOSIV TK90A60 Y 0.5 5 0.9 70.5 6 5 DTMOSV TK6A60 W 0 5.8 40 0.9 50 4 5 8 DTMOSIV TK6A60W5 0 5.8 40 0. 50 4 DTMOSIV(HSD) TK0A60 W 0 0 45 0.55 680 7 40 48 DTMOSIV TK0A60W5 0 0 45 5 800 5.5 55 DTMOSIV(HSD) TK5A60 X 0 5 0.00 6 60 40 DTMOSIV-H TK5A60X5 0 5 400 6 60 60 DTMOSIV-H(HSD) TKA60 W 0 45 0.088 000 9.5 70 86 DTMOSIV (Continued on next page) TK9A60 W 0 8.8 50 0.0600 0 90 0 DTMOSIV (A) (A) (A_I) 4.0.6.54.54 (/5) 9.5 6. (A) (A_I) Source Source 0

(Single N-Channel) / N (/5) (Continued from previous page) TO-0SIS 5.0.0.0 5..9.85 0.0 TO-0 TK5A65 W VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) 0 5. 0. 80.5 0 DTMOSIV TK6A65 W 0 5.8 0 90.7 DTMOSIV TK7A65 W 0 6.8 0 8 490.7 5 DTMOSIV TK560A65 Y 0 7 0 6 80.5 8 4.5 DTMOSV TK8A65 W 0 7.8 0 570.5 6 6 DTMOSIV TK9A65 W 0 9. 0 700. 0 0 DTMOSIV TK80A65 Y 0 9.7 0 0.8 590.5 0 DTMOSV TKA65 W 0. 5 0.9 890.8 5 DTMOSIV TK90A65 Y 0.5 5 0.9 70.5 6 5 DTMOSV 650 TK4A65 W 0.7 40 0.5 00 4 5 5 DTMOSIV TK4A65W5 0.7 40 0. 00 4 0 DTMOSIV(HSD) TK7A65 W 0 7. 45 0. 800 7 40 45 DTMOSIV TK7A65W5 0 7. 45 0. 800 5.5 50 DTMOSIV(HSD) TKA65 X 0 45 0.00 6 60 50 DTMOSIV-H TKA65X5 0 45 400 6 60 50 DTMOSIV-H(HSD) TK8A65 W 0 7.6 45 0. 000 8 70 75 DTMOSIV TK5A65 W 0 5 50 0.08 400 9 90 00 DTMOSIV TK5A65W5 0 5 50 0.0900 9 90 5 DTMOSIV(HSD) TK7A80 W 6.5 5 700. 0 DTMOSIV TK0A80 W 9.0 5 50 7 9 DTMOSIV 800 TKA80 W.5 00 9 DTMOSIV TK7A80 W 7 45 0.9 050 4 DTMOSIV TK0E60 W 0 9.7 00 0.8 700. 0 0 DTMOSIV TKE60 W 0.5 0 0. 890.8 5 DTMOSIV TK6E60 W 0 5.8 0 0.9 50 4 5 8 DTMOSIV TK6E60W5 0 5.8 0 0. 50 4 DTMOSIV(HSD) TK0E60 W 0 0 65 0.55 680 7 40 48 DTMOSIV 600 TK0E60W5 0 0 65 5 800 5.5 55 DTMOSIV(HSD) TK5E60 X 0 5 80 0.00 6 60 40 DTMOSIV-H TK5E60X5 0 5 80 400 6 60 60 DTMOSIV-H(HSD) TKE60 W 0 0 0.088 000 9.5 70 86 DTMOSIV TKE60 X 0 0 0.088 000 7 70 65 DTMOSIV-H TK4E65 W 0.7 0 0.5 00 4 5 5 DTMOSIV TK4E65W5 0.7 0 0. 00 4 0 DTMOSIV(HSD) 650 TK7E65 W 0 7. 65 0. 800 7 40 45 DTMOSIV TK8E65 W 0 7.6 0 0. 000 8 70 75 DTMOSIV TK7E80 W 6.5 0 700. 0 DTMOSIV TK0E80 W 9.5 0 5 50 7 9 DTMOSIV 800 TKE80 W.5 65 00 9 DTMOSIV TK7E80 W 7 80 0.9 050 4 DTMOSIV (A_I) (A) (A) (A_I) Source Source

(Single N-Channel) / N (4/5) 0.0.7 TO-P(N) 5.5 Anode Anode Cathode 0.07 TO-47 4.5 5.94 Heat Sink TKJ60 W VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) 0.5 0 0. 890.8 5 DTMOSIV TK6J60 W 0 5.8 0 0.9 50 4 5 8 DTMOSIV TK6J60W5 0 5.8 0 0. 50 4 DTMOSIV(HSD) TK0J60 W 0 0 65 0.55 680 7 40 48 DTMOSIV TK0J60W5 0 0 65 5 800 5.5 55 DTMOSIV(HSD) TKJ60 W 600 0 0 0.088 000 9.5 70 86 DTMOSIV TKJ60W5 0 0 0.099 000 9.5 70 05 DTMOSIV(HSD) TK9J60 W 0 8.8 70 0.0600 0 90 0 DTMOSIV TK9J60W5 0 8.8 70 0.074 400 0 90 5 DTMOSIV(HSD) TK6J60 W 0 6.8 400 0.04 6500 0 40 80 DTMOSIV TK6J60W5 0 6.8 400 0.045 6500 6 40 05 DTMOSIV(HSD) TK6N60 W 0 5.8 0 0.9 50 4 5 8 DTMOSIV TK6N60W5 0 5.8 0 0. 50 4 DTMOSIV(HSD) TK0N60 W 0 0 65 0.55 680 7 40 48 DTMOSIV TK0N60W5 0 0 65 5 800 5.5 55 DTMOSIV(HSD) TK5N60 X 0 5 80 0.00 6 60 40 DTMOSIV-H TK5N60X5 0 5 80 400 6 60 60 DTMOSIV-H(HSD) TKN60 W 0 0 0.088 000 9.5 70 86 DTMOSIV TKN60W5 600 0 0 0.099 000 9.5 70 05 DTMOSIV(HSD) TKN60 X 0 0 0.088 000 7 70 65 DTMOSIV-H TK9N60 W 0 8.8 70 0.0600 0 90 0 DTMOSIV TK9N60W5 0 8.8 70 0.074 400 0 90 5 DTMOSIV(HSD) TK9N60 X 0 8.8 70 0.0600 8 90 85 DTMOSIV-H TK6N60 W 0 6.8 400 0.04 6500 0 40 80 DTMOSIV TK6N60W5 0 6.8 400 0.045 6500 6 40 05 DTMOSIV(HSD) TK6N60 X 0 6.8 400 0.04 6500 0 5 DTMOSIV-H TK4N65 W 0.7 0 0.5 00 4 5 5 DTMOSIV TK4N65W5 0.7 0 0. 00 4 0 DTMOSIV(HSD) TK7N65 W 0 7. 65 0. 800 7 40 45 DTMOSIV TK8N65 W 0 7.6 0 0. 000 8 70 75 DTMOSIV TK8N65W5 0 7.6 0 0. 000 8 70 90 DTMOSIV(HSD) 650 TK5N65 W 0 5 70 0.08 400 9 90 00 DTMOSIV TK5N65W5 0 5 70 0.0900 9 90 5 DTMOSIV(HSD) TK49N65 W 0 49. 400 0.055 6500 0 60 DTMOSIV TK49N65W5 0 49. 400 0.057 6500 0 85 DTMOSIV(HSD) TK040N65 Z * 0 57 60 0.04 650 4 40 05 DTMOSVI (A) (A) (A) Source

(Single N-Channel) / N (5/5) VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) TO-47-4L 5.94 TK5Z60 X 0 5 80 0.00 6 60 40 DTMOSIV-H TKZ60 X 0 0 0.088 000 7 70 65 DTMOSIV-H 600 (4A) 0. 4. TK9Z60 X 0 8.8 70 0.0600 8 90 85 DTMOSIV-H TK6Z60 X 0 6.8 400 0.04 6500 0 5 DTMOSIV-H TO-P(L) 0.0 0.0 6.0.5 TK00L60 W 600 0 00 797 0.08 5000 50 0 60 DTMOSIV (A) (A) (4A) * 4 Source Source Source (*) Notice : Please use the source pin for gate input signal return. Make sure that the main current flows into the source pins. (*)

π-mos / π-mos (Single N-Channel) / N (/4) VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) 9.5 5.5 New PW-Mold TK5P50D5 500 0 5 80.890 55 π-mosvii (HSD) TKP60 D 600 0 60 4. 80.5 0 7 π-mosvii (A) 6.0.0.0 6.0 6.5.4 TKP90 A 900 0 0 9 0 0 5 π-mosiv (B).6.6.. TKP50 D 0 60 80.5 0 7 π-mosvii 0.0 6. DPAK 6.6.7 TK4P50 D 0 4 80 80 45 9 π-mosvii 500 TK5P50 D 0 5 80.90 55 π-mosvii TK7P50 D 0 7 00. 600 4 70 π-mosvii TK5P5 D 0 5 80.5 540 60 π-mosvii 55 TK6P5 D 0 6 00. 600 4 70 π-mosvii TK4P55 DA 0.5 80.45 80.5 9 π-mosvii 550 TK4P55 D 0 4 80.88 490 55 π-mosvii TK4P60 DA 0.5 80. 490 55 π-mosvii TK4P60 DB 600 0.7 80 540 60 π-mosvii TK4P60 D 0 4 00.7 600 4 70 π-mosvii TKP80 E 800 0 80 4.9 500 4 40 π-mosviii TKP90 E 900 0 80 5.9 500 4 40 π-mosviii (A) 6.0.0.0 6.0.6.6.. New PW-Mold 6.5 TKQ60 D 0 60 4. 80.5 0 7 π-mosvii 600 (A) 7.0 TK4Q60 DA 0.5 80. 490 55 π-mosvii 5.7.6 TKQ90 A 900 0 0 9 0 0 5 π-mosiv (B) (A) (B) Source Source 4

(Single N-Channel) / N TO-0SIS 5.0.0.0 0.0 TK5A45 DA VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) 0 4.5 0.75 80.5 9 π-mosvii TK6A45 DA 0 5.5 5.90 55 π-mosvii TK7A45 DA 0 6.5 5. 540 60 π-mosvii TK8A45 D 0 8 5 0.9 700 4 80 6 π-mosvii TK9A45 D 450 0 9 40 7 800 4 00 6 π-mosvii TKA45 D 0 40 050 5 00 0 π-mosvii TKA45 D 0 45 00 6 0 4 π-mosvii TKA45 D 0 45 6 50 6 5 5 π-mosvii TK9A45 D 0 9 50 0.5 600 80 45 π-mosvii TK4A50 D 0 4 0 80.5 9 π-mosvii TK5A50 D 0 5 5.90 55 π-mosvii TK5A50D5 0 5 5. 490 55 π-mosvii (HSD) TK6A50 D 0 6 5.4 540 60 π-mosvii TK7A50 D 0 7 5. 600 4 70 π-mosvii TK7A50D5 0 7 5.68 600 4 70 π-mosvii (HSD) TK8A50 DA 0 7.5 5.04 700 4 80 6 π-mosvii TK8A50 D 0 8 40 5 800 4 00 6 π-mosvii 500 TK0A50 D 0 0 45 050 5 00 0 π-mosvii TKA50 D 0 45 00 6 0 4 π-mosvii TKA50 D 0 45 50 6 5 5 π-mosvii TKA50D5 0 45 8 00 60 0 π-mosvii (HSD) TKA50 DA 0.5 7 550 7 65 8 π-mosvii TKA50 D 0 45 800 9 90 8 π-mosvii TK5A50 D 0 5 50 0. 00 0 50 40 π-mosvii TK8A50 D 0 8 50 600 80 45 π-mosvii TK4A5 D 0 4 5.7 490 55 π-mosvii TK5A5 D 0 5 5.5 540 60 π-mosvii 55 TK6A5 D 0 6 5. 600 4 70 π-mosvii TKA5 D 0 45 8 50 6 5 5 π-mosvii TK4A55 DA 0.5 0.45 80.5 9 π-mosvii TK4A55 D 0 4 5.88 490 55 π-mosvii TK5A55 D 0 5 5.7 540 60 π-mosvii TK6A55 DA 0 5.5 5.48 600 4 70 π-mosvii TK7A55 D 0 7 5.5 700 4 80 6 π-mosvii TK8A55 DA 0 7.0.07 800 4 00 6 π-mosvii TK9A55 DA 550 0 8.0 6 050 5 00 0 π-mosvii TK0A55 D 0 0 45 00 6 0 4 π-mosvii TKA55 D 0 45 50 6 5 5 π-mosvii TKA55 D 0 45 7 550 7 65 8 π-mosvii TKA55 DA 0.5 8 800 9 90 8 π-mosvii TK4A55 D 0 4 50 00 0 50 40 π-mosvii (Continued on next page) TK6A55 D 0 6 50 0. 600 80 45 π-mosvii (A_I) (/4) (A_I) Source 5

(Single N-Channel) / N (/4) (Continued from previous page) TK4KA60 F ** TO-0SIS 5.0.0.0 0.0 VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) 0 0 4. 70.5 8 π-mosix TKA60 DA 0.5 0.8 80.5 9 π-mosvii TK4A60 DA 0.5 5. 490 55 π-mosvii TKKA60 F ** 0.5 0. 450.6 6 π-mosix TK4A60 DB 0.7 5 540 60 π-mosvii TKK9A60 F * 0.7 0.9 490 5. 0 4 π-mosix TK4A60 D 0 4 5.7 600 4 70 π-mosvii TKK7A60 F ** 0 4 5.7 560 5 0 6 π-mosix TK5A60 D 0 5 5.4 700 4 80 6 π-mosvii TK6A60 D 0 6 40.5 800 4 00 6 π-mosvii TKKA60 F * 0 6 5. 740 6.8 9 π-mosix 600 TK8A60 DA 0 7.5 050 5 00 0 π-mosvii TKK0A60 F ** 0 7.0 890 8. 4 π-mosix TK9A60 D 0 9 45 00 6 0 4 π-mosvii TK0A60 D 0 0 45 5 50 6 5 5 π-mosvii TK0A60D5 0 0 45.05 50 5 5 5 π-mosvii (HSD) TK750A60 F * 0 0 40 5 0 8.0 0 π-mosix TKA60 D 0 45 550 7 65 8 π-mosvii TK650A60 F * 0 45 0 0 47 4 π-mosix TKA60 D 0 45 5 800 9 90 8 π-mosvii TKA60 D 0 50 00 0 50 40 π-mosvii TK5A60 D 0 5 50 600 80 45 π-mosvii TKA65 D 0 0.6 80.5 9 π-mosvii TKA65 DA 0.5 5.90 55 π-mosvii TKA65 D 0 5.5 540 60 π-mosvii TK4A65 DA 0.5 5.9 600 4 70 π-mosvii TK5A65 DA 0 4.5 5.67 700 4 70 6 π-mosvii TK5A65 D 0 0.4 800 4 00 6 π-mosvii 650 TK6A65 D 0 6 45. 050 5 00 0 π-mosvii TK7A65 D 0 7 45 0.98 00 6 0 4 π-mosvii TK8A65 D 0 8 4 50 6 5 5 π-mosvii TKA65 D 0 45 700 8 57 0 π-mosvii TKA65 D 0 50 4 00 0 00 40 π-mosvii TKA65 D 0 50 7 600 80 45 π-mosvii TK4A80 E 0 4 5.5 650 6 55 5 π-mosviii TK5A80 E 0 0.4 950 8 75 0 π-mosviii SK40 800 0 6 45.7 400 0 0 45 π-mosiv (B_I) TK6A80 E 0 6 45.7 50 0 0 π-mosviii (Continued on next page) TK0A80 E 0 0 50 000 5 50 46 π-mosviii (A_I) (A_I) **: Under Development / (A_I) (B_I) Source Source 6

(Single N-Channel) / N (4/4) (Continued from previous page) TO-0SIS 5.0.0.0 0.0.7 0.0 TO-P(N) 5.5 Heat Sink Anode Anode Cathode SK566 VDSS VGSS ID (A) PD (W) RDS(ON) max (Ω) VGS = 0 V Ciss Crss Coss Qg (nc) SK565 900 0 5.5 50 0 00 8 π-mosiv 0.0 6.4 470 0 50 π-mosiv (B_I) TKA90 E 0.5.6 650 6 55 5 π-mosviii (A_I) SK564 0 40 4. 700 5 75 7 π-mosiv SK798 0 4 40.5 800 0 85 6 π-mosiv TK5A90 E 0 4.0. 950 8 75 0 π-mosviii (A_I) SK74 0 5.5 50 0 0 5 π-mosiv SK404 0 6 45 400 0 0 45 π-mosiv TK7A90 E 0 7 45 50 0 0 π-mosviii (A_I) SK799 0 8 50. 00 45 90 60 π-mosiv (B_I) TK9A90 E 0 9 50. 000 5 50 46 π-mosviii (A_I) TK5J50 D 0 5 0 800 9 90 8 π-mosvii 500 TK0J50 D 0 0 80 600 80 45 π-mosvii TKJ55 D 0 90 7 550 7 65 8 π-mosvii TK6J55 D 550 0 6 50 00 0 50 40 π-mosvii TK9J55 D 0 9 80 0. 600 80 45 π-mosvii SK6 0 7 50.7 500 0 5 π-mosiv (B_I) 800 TK0J80 E 0 0 50 000 5 50 46 π-mosviii (A) SK700 0 5 50.5 50 0 00 8 π-mosiv SK45 0 7 50 650 0 40 45 π-mosiv TK7J90 E 900 0 7 00 50 0 0 π-mosviii TK9J90 E 0 9 50. 000 5 50 46 π-mosviii SK407 0 50 790 5 00 45 π-mosiv (B_I) (B_I) (B_I) (A) (B_I) (A) (A) (A_I) (B_I) Source Source Source 7

Automotive MOSFETs / MOSFET Automotive Power MOSFETs / MOSFET (Single N-Channel) / N 9.5 5.5 DPAK+ 6.5.4 VDSS VGSS ID (A) PD (W) Tch ( C) VGS = 0 V VGS = 6 V VGS = 4.5 V Ciss Crss Coss Qg (nc) TK5S04N L 6 75 7.8 7 60 50 90 0 U-MOSVIII-H TK5S04K L 5 58 75 0. 5 70 80 0 8 U-MOSIV TK65S04N L 40 65 07 7. 7.8 550 0 40 9 U-MOSVIII-H TK00S04N L 00 80 75. 4.5 5490 0 000 76 U-MOSVIII-H TKR4S04 PB 0 80 75.5.9 5500 490 400 0 U-MOSIX-H TK8S06K L 8 5 75 54 80 400 40 80 0 U-MOSIV TK0S06K L 0 8 75 9 40 780 75 6 8 U-MOSIV TK5S06N L 5 57 75 8.5 6.8 855 69 490 5 U-MOSVIII-H TK0S06K L 60 0 58 75 8 0 50 0 0 8 U-MOSIV TK40S06N L 40 88. 75 8 650 07 85 6 U-MOSVIII-H TK60S06K L 60 88 75 8. 900 80 460 60 U-MOSIV TK90S06N L 90 57 75. 5. 5400 50 60 8 U-MOSVIII-H (A) TK7S0N Z 7 50 78 470 6 60 7. U-MOSVIII-H TKS0N L * 65 75 8 50 850 67 70 5 U-MOSVIII-H TKS0N L 5 75 9.7 6. 50 45 00 U-MOSVIII-H 00 TKS0N Z 5 75 9.7 050 40 070 8 U-MOSVIII-H TK55S0N 55 57 75 6.5 80 0 50 49 U-MOSVIII-H TK60S0N L 60 80 75 6. 9.5 40 0 480 60 U-MOSVIII-H (B) (A) (B) (B) (A) 6.0...0.0 6.0.6.6 (A) (B) Source Source 8

(Single P-Channel) / P 9.5 5.5 DPAK+ 6.5.4 TJ0S04M L TJ0S04M L TJ40S04M L TJ60S04M L TJ80S04M L TJ90S04M L TJ8S06M L TJ5S06M L TJ0S06M L TJ50S06M L TJ60S06M L TJ5S0M VDSS 40 60 00 VGSS +0/ +0/ +0/ +0/ +0/ +0/ +0/ +0/ +0/ +0/ +0/ +0/ ID (A) PD (W) Tch ( C) VGS = 0 V VGS = 6 V VGS = 4.5 V Ciss Crss Coss Qg (nc) 0 7 74 6 90 90 40 9 U-MOSVI 4 75. 850 80 50 7 U-MOSVI 40 68 75 9. 440 40 50 8 U-MOSVI 60 90 75 6. 9.4 650 570 780 5 U-MOSVI 80 00 75 5. 7.9 7770 740 970 58 U-MOSVI 90 80 7. 6.0 7700 85 990 7 U-MOSVI (a) 8 7 75 04 0 890 60 00 9 U-MOSVI 75 50 6 770 0 80 6 U-MOSVI 0 68 75.8 8 950 70 60 80 U-MOSVI 50 90 75.8 7.4 690 40 560 4 U-MOSVI 60 00 75. 4.5 7760 50 690 56 U-MOSVI 5 75 75 0 00 5 90 69 U-MOSVI (a) (b) (b) 6.0...0.0 6.0.6.6 (a) (b) Source Source Pch Pch 9

Automotive Small- / (Single N-Channel) / N (/) VDSS VGSS Tch ( C) VGS = 0 V VGS = 6 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc). VESM SOT-7 SSMK5 MFV 0 0.8 0.5 50 000 4000 8000 9.. 9.5 π-mosvi (C_S) 0 SSMK56 MFV 8 0.5 50 5 00 480 840 55 6 6 U-MOSVII-H (B_S).5 5. SSMK44 MFV 0 0. 0.5 50 4000 7000 8.5 5. 9.4 π-mosvi (C_S) 5.6 SSM SOT-46.6 5 SSMK5 FS 0 0.8 0. 50 000 4000 8000 9.. 9.5 π-mosvi (C_S) 0 SSMK56 FS 8 0.5 50 5 00 480 840 55 6 6 U-MOSVII-H (B_S) SSMK44 FS 0 0. 0.5 50 4000 7000 8.5 5. 9.4 π-mosvi SSMK7 KFS * 60 0. 0.5 50 500 750 6. 5.5 0.9 U-MOSVII-H (C_S).4 UDFN6B 0.5 0. 0.5.0..0 5 UFM.0 SSM6K504 NU 0 9.5 50 9.5 6 60 4 0 4.8 U-MOSVII-H (6B) SSMK6 TU * 8 50 57 68 89 9 77 7 5 U-MOSVII-H (C_S) SSMK TU 0 50 6 04 95 9 5.4 U-MOSIII 0 SSMK TU 0. 50 48 6 9 40 400 60 68 5.9 U-MOSIII SSMK TU 0 4. 50 8 4 66 00 50 6.6 U-MOSIII SSMK7 TU 50 67 86 8 4.5 U-MOSIII SSMK6 TU 0. 50 00 5 45 4 U-MOSIII SSMK TU 6 50 7.6 4.5 450 77 0 0. U-MOSIV (A_S) SSMK65 TU * 50 00 440 50 5 70 6 π-mosv (C_S) 60 SSMK4 TU * 6 75 6 5 69 550 5 00 9. U-MOSVIII-H (B_S) SSMK6 TU * 00.5 75 69 9 40 60. U-MOSVIII-H (B_S).875 5 5.5.9 USM SOT- SSMK5 FU 0 0. 0.5 50 4000 7000 7.8.6 8.8 π-mosvi.0. (C_S).9 SSMK700 KFU * 60 0.5 50 500 750 6. 5.5 0.9 U-MOSVII-H. UF6.0 SSM6K404 TU 0 50 55 70 00 47 400 60 68 5.9 U-MOSIII 0 SSM6K40 TU 0 4. 50 8 4 66 050 60 75 6.8 U-MOSIII SSM6K406 TU 0 4.4 50 5 8.5 490 0.4 U-MOSIV SSM6K407 TU 60 50 00 440 50 5 70 6 π-mosv (6B).9 5 Top View (A_S) (B_S) (C_S) (6B) 6 40

(Single N-Channel) / N (/) VDSS VGSS Tch ( C) VGS = 0 V VGS = 6 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) SSMK6 R * 50 95 40 6 8 6.7 U-MOSVII-H.4 SOT-F.9 S-Mini SOT-46 SSMK9 R.5 50 6 70 89 8 4.5 U-MOSIII SSMK76 R 0 +/ 8 4 50 56 7 09 00 40. U-MOSVII-H SSMK R 6 50 8 4 46 8 77.4 U-MOSVII-H (A_S) SSMK5 R 6 50 8 56 40 0 60.7 U-MOSVII-H (B_S) SSMK65 R SSMK8 R 60.5 50 07 45 5 7 U-MOSIV (B_S) 50 00 440 50 5 70 6 π-mosv (C_S) SSMK4 R * 6. 75 6 5 69 550 5 00 9. U-MOSVIII-H SSMK6 R * 00.5. 75 69 9 40 60. U-MOSVIII-H (C_S) SSMK5 F 0 0. 0. 50 4000 7000 7.8.6 8.8 π-mosvi (B_S). 0.9.5 (C_S).4.0.9.5 SSMK700 KF * 60 50 500 750 6. 5.5 0.9 U-MOSVII-H.8.4 PS-8.9 TPCP80 5.96 () TPCP800 40 6.96 () TPCP8009 0.0 () TPCP80 4.96 () 60 TPCP80 8.0 () 75.8 5. 505 66 5.8 U-MOSIV 75.8 8.4 600 75. U-MOSIV 75.8 9.5 50 65 65 5. U-MOSIV 75 5.8 77.9 58 86 U-MOSIV 75 0. 9. 60 0 00 6.6 U-MOSIV (8B).4 SOP Advance (WF) TPH4R04 NC 40 55 7. 8.8 450 45 80 5 U-MOSVIII-H 5 5.05 6.0 5.0 TPHR04 PB * 40 0 75.4.95 4560 0 940 55 U-MOSIX-H (8B) 4.7.75 4.8 5.0 5. TPHR7904 PB * 50 70 75 9. 640 490 400 85 U-MOSIX-H.7.45 Note (): Device mounted on a glass board. t = 5 seconds. / t = 5 Top View (A_S) (B_S) (C_S) (8B) 4 4

(Single P-Channel) / P (/) VDSS VGSS Tch ( C) VGS = 0 V VGS = 6 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc). VESM SOT-7. SSMJ5 MFV SSMJ66 MFV 0 0. 0.5 50 8000 000 000. 6.5 π-mosvi (c_s) +6/ 8 50 90 480 660 900 00 0 6.6 U-MOSVI (b_s) SSMJ6 MFV 8 0. 0.5 50 0 700 600 4 6. 0.. U-MOSIII SSMJ5 FV 0 0. 0.5 50 000 000 9..5 8.6 π-mosvi (c_s).5 5 5.6 SSM SOT-46 SSMJ5 FS 0 0. 0. 50 8000 000 000. 6.5 π-mosvi SSMJ6 FS 8 0. 0.5 50 0 700 600 4 6. 0.. U-MOSIII (c_s).4.6 5 SSMJ5 FS 0 0. 0. 50 000 000 9..5 8.6 π-mosvi. UFM.0 SSMJ45 TU SSMJ44 TU SSMJ40 TU SSMJ4 TU SSMJ TU +6/ 8 +6/ 8 +6/ 8 +6/ 8.0 50 0 80 60 70 40 4.6 U-MOSVI. 50 9 68 40 90 44 4.7 U-MOSVI 4.4 50 5.8 4. 6. 800 90 0.8 U-MOSVI 5.5 50 9.8 9.7 56 88.4 840 99 8.8 U-MOSVI. 50 90 790 86 4 5 U-MOSII (b_s).9 USM SOT- SSMJ8 TU 0.4 50 40 480 7 0 9 U-MOSII SSMJ7 TU 50 7 5 80 45 80 U-MOSII SSMJ6 TU 8 0. 50 0 700 600 4 6. 0.. U-MOSIII.0. (c_s).9 SSMJ5 FU 0 0. 0.5 50 000 000 9..5 8.6 π-mosvi SSM6J50 TU 0.5 50 64 00 800 0 60 U-MOSIV. UF6.0 SSM6J44 TU SSM6J4 TU SSM6J40 TU +6/ 8 +6/ 8 6.0 50.5 6 6 54 650 90 0. U-MOSVI 4.0 50 4.7 5.4 67.8 99.6 840 99 8.8 U-MOSVI 50 7 5 80 45 80 5. U-MOSII SSM6J40 TU 0. 50 6 9 0.9 U-MOSIII (6b).9 5 SSM6J40 TU.5 50 7 45 70 90 0 6 U-MOSIII Top View (b_s) (c_s) (6b) 6 Pch Pch Pch 4

(Single P-Channel) / P (/) VDSS VGSS Tch ( C) VGS = 0 V VGS = 6 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).4 SOT-F.9 SSMJ77 R SSMJ7 R SSMJ78 R SSMJ74 R SSMJ7 R SSMJ56 R * SSMJ5 R * 0 60 +6/ 8 +6/ 8 +6/ 8.9 50 9 68 40 90 44 4.6 U-MOSVI 4.0 50 55 75 00 50 60 60 75 U-MOSVI 6.0 50 9.8 9.7 56 88.4 840 99 8.8 U-MOSVI +0/ 4.0 50 7 05 6 80 40 55 5.9 U-MOSVI +6/ 6.0 50 4 50 7 44 560 65 80 8. U-MOSVI +0/ 50 00 60 400 0 0 8. U-MOSVI +0/.5 50 4 64 84 660 50 70 5. U-MOSVI (b_s). 0.9 S-Mini SOT-46 SSMJ75 F +6/ 8 50 50 79 70 40 4.6 U-MOSVI (b_s).5 SSMJ5 F 0 0. 0. 50 000 000 9..5 8.6 π-mosvi (c_s).4.0.8.4.9.5 PS-8.9 SSMJ68 F * 60 +0/ 50 550 900 000 8 5.5 U-MOSVI (b_s) TPCP809 TPCP807 TPCP8 TPCP80 Note (): Device mounted on a glass board. t = 5 seconds. / t = 5 40 60 +0/.96 4.5 () 75 5. 76.8 80 85 0 8 U-MOSVI +0/ +0/ +0/ 8.0 () 75 8 6.8 60 8 9 44.6 U-MOSVI.96 () 75 7 58.4 760 60 90 7 U-MOSVI 5.0 () 75 9.5 5. 075 50 05 U-MOSVI (8b).4 Top View (b_s) (c_s) (8b) 4 Pch Pch Pch 4

(Dual Channel/Complementary) / / (/) Polarity VDSS VGSS Tch ( C) VGS = 0 V VGS = 6 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc).6 ES6 SOT-56.6 5 SSM6N5 FE 0 0.8 0.5 50 000 4000 8000 9.. 9.5 π-mosvi (6CC) 0 N-ch x SSM6N56 FE 8 0.5 50 5 00 480 840 55 6 6 U-MOSVII-H (6BB) SSM6N44 FE 0 0. 0.5 50 4000 7000 8.5 5. 9.4 π-mosvi (6CC) SSM6P5 FE 0 0. 0.5 50 8000 000 000. 6.5 π-mosvi P-ch x SSM6P6 FE 8 0. 0.5 50 0 700 600 4 6. 0.. U-MOSIII (6cc) N-ch + P-ch SSM6P5 FE 0 0. 0.5 50 000 000 9..5 8.6 π-mosvi SSM6L5 FE SSM6L6 FE 0 0 0.8 0.5 50 000 4000 8000 9.. 9.5 π-mosvi 0 0. 0.5 50 8000 000 000. 6.5 π-mosvi 0 0 0.5 50 660 850 40 50 46 7.. U-MOSIII 8 0. 0.5 50 0 700 600 4 6. 0.. U-MOSIII (6Cc).5 0. 5.0. UDFN6 SOT-8.0 5 UF6.0 SSM6N6 NU * 0 8 4 50 45 74 08 40 40 85.6 U-MOSVII-H SSM6N55 NU N-ch x SSM6N67 NU SSM6N68 NU 0 4 50 46 64 80 0 5.5 U-MOSVII-H +/ 8 +/ 8 P-ch x SSM6P69 NU +6/ 4 50 9. 5 8 0 0 5. U-MOSVII-H 4 50 84 7 80 9 4.8 U-MOSVII-H (6BB) 4 50 45 56 76 57 480 76 90 6.74 U-MOSVI (6bb) SSM6N6 TU 8 50 85 98 0 7 77 7 5 U-MOSVII-H 0 SSM6N9 TU 0.6 50 9 9 90 47 60 7 45 7.5 U-MOSIII N-ch x SSM6N4 TU 50 45 80 45 4 U-MOSIII 0 SSM6N40 TU.6 50 8 80 7 4 5. U-MOSIII SSM6P54 TU 8. 50 8 50 555 9 48 7.7 U-MOSIV P-ch x SSM6P9 TU 8.5 50 94 40 50 6.4 U-MOSIII (6bb) N-ch + P-ch SSM6P40 TU 0.4 50 6 40 0.9 U-MOSIII SSM6L TU SSM6L9 TU SSM6L40 TU 0 50 45 80 45 4 U-MOSIII 50 60 40 8 4 5 U-MOSIII 0 0.6 50 9 9 90 47 60 7 45 7.5 U-MOSIII 8.5 50 94 40 50 6.4 U-MOSIII 0.6 50 8 80 7 4 5. U-MOSIII 0.4 50 6 40 0.9 U-MOSIII (6BB) (6Cc) (6Bb).875.9 0. 5 0.9 5 6 Top View (6BB) (6CC) (6bb) (6cc) (6Bb) (6Cc) 6 6 6 6 6 Q Q Q Q Q Q Q Q Q Q Q Q x x Pch x Pch x + Pch + Pch 44

(Dual Channel/Complementary) / / (/) Polarity VDSS VGSS Tch ( C) VGS = 0 V VGS = 6 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc)..8.4 US6 SOT-6 PS-8.9 TSOP6F SSM6N5 FU 0 0.8 0. 50 000 4000 8000 9.. 9.5 π-mosvi 0 SSM6N4 FU 0 0. 50 660 850 40 50 46 7.. π-mosvi N-ch x SSM6N44 FU 0 0. 0. 50 4000 7000 8.5 5. 9.4 π-mosvi SSM6N700 KFU * 60 0. 50 500 750 6. 5.5 0.9 U-MOSVII-H P-ch x SSM6P6 TU 8 0. 50 0 700 600 4 6. 0.. U-MOSIII N-ch + P-ch SSM6P5 FU 0 0. 0. 50 8000 000 000. 6.5 π-mosvi SSM6P5 FU 0 0. 0. 50 000 000 9..5 8.6 π-mosvi SSM6L5 FU SSM6L6 TU N-ch x TPCP807 40 5 N-ch + P-ch TPCP8407 0 0 0.8 0. 50 000 4000 8000 9.. 9.5 π-mosvi 0 0. 0. 50 8000 000 000. 6.5 π-mosvi 0 0 50 660 850 40 50 46 7.. U-MOSIII 8 0. 50 660 850 40 50 46 7.. U-MOSIII 40 5 40 +0/ (6CC) (6cc) (6Cc).77 () 75 6. 6.8 505 66 5.8 U-MOSIV (8BB).77 () 75 6. 6.8 505 66 5.8 U-MOSIV 4.77 () 75 56.8 8. 80 85 0 8 U-MOSVI SSM6N57 R * 60 50 4.5 0.5 π-mosv (6DD) (8Bb).4.9.6. N-ch x.9 SSM6N8 R 00.5.5 75 54 4 7 06.6 U-MOSVIII-H (6CC) Note (): Device mounted on a glass board. t = 5 seconds. / t = 5 6 Top View (6CC) (6cc) (6Cc) (6DD) (8BB) 6 6 Q Q Q Q Q Q 4 x Pch x + Pch x x (8Bb) 4 + Pch 45

(Semi-Power Type: Built-in Zener Diode) / : ZD Polarity VDSS VGSS Tch ( C) VGS = 0 V VGS = 6 V VGS = 4 V VGS =.5 V VGS =.8 V VGS =.5 V Ciss Crss Coss Qg (nc) UFM..0 N-ch + Zener SSMH7 TU * 4 50 40 80 95 9 8 40 U-MOSIV (ZC_).9 SOT-F SSMK7 R * 8 50 50 76 00 0 7. U-MOSIV (ZC_).4 N-ch + Zener SSMK47 R * 50 40 40 480 86 7.5 U-MOSIV (ZC_). 0.9.9 SSMK57 R 60 50 4.5 0.5 π-mosv (ZC_4) PS-8.8.4 N-ch + Zener TPCP8R0 60 50 00 440 40 0 65 5 π-mosv (8ZB).4.9 Top View (ZC_) (ZC_) (ZC_) (ZC_4) (8ZB) 4 + ZD + ZD + ZD + ZD + ZD 46

Junction FETs / FET (Single Type) / Classification General-purpose VGDS IG(mA) Yfs (ms) S-MINI (SC-59) USM (SC-70) IDSS(mA) Max Max Min Pch Pch 50 0 0. to 6.5. SK08 SK879 50 0. to 4 4 SK09 SK880 (Dual Type) / Classification VGDS IG(mA) IDSS(mA) Yfs (ms) Min SMV USV x Pch x x Pch x General-purpose 50 0. to 4 4 SK45 SK0 Q Q Lineup / S-MINI (SC-59) USM (SC-70).9.0 SMV.9 USV.0.5.5..5.8.6..5 SiC MOSFETs / SiC MOSFET SiC MOSFETs / SiC MOSFET Circuit Configuration VDS Absolute Maximum ratings ID (A) Typ. Electrical Characteristics (Ta = 5 C) RDS(ON) Qg (nc) 0.0.7 TO-P(N) 5.5 Heat Sink Source Single 00 (6) 70 (0) (6) (50) TW070J0B ** VGS ID (A) **: Under development / 47

Radio-Frequency MOSFETs / MOSFET Radio-Frequency Small-Signal MOSFETs / MOSFET Applications VDS Electrical Characteristics (Ta = 5 C) ID (ma) PD (mw) IDSS (ma) Yfs (ms) Typ. Marking Equivalent Product (Leaded Type) SK9 SMQ.9 UHF-band radio-frequency amps.5 0 50 0 to 0. 6 UF.9.5 SK9 VHF/UHF-band radiofrequency amps.5 0 50 0 to 0..5 UV SK9 USQ.0 UHF-band radio-frequency amps.5 0 00 0 to 0. 6 UF SK94..5 VHF/UHF-band radiofrequency amps.5 0 00 0 to 0..5 UV Radio-Frequency Power MOSFETs / MOSFET Applications (Ta = 5 C) VDSS PD (W) ID (A) Min VDS Po (W) Test Conditions RFM08U9 X PW-X 6 0 5 7.5 9.6 50 SK075 PW-X 0 0 5 7.5 9.6 50 SK074 PW-MINI 0 9.6 50 0.0 RFMU7 X PW-X 0 0 4.5 7. 50.0 RFM07U7 X PW-X UHF/VHF Professional radios 6 0 7.0 7. 450 to 50 RFM06U X * PW-X 6 0 5 5.0.6 50 RFM0U7 P PW-MINI 0.0 7. 50 0. SK476 PW-X 0 0 7.0 7. 50 SK475 PW-MINI 0 7. 50 0.0 RFM04U6P PW-MINI 6 7.5 6.0 470 0. GMRS SK407 PW-X 0.55 6.0 470 0. SK854 PW-MINI UHF and VHF radio 0 0. 6.0 849 0.0 SK079 A PW-X SK756 PW-MINI 7.5.6 4.70 0. FRS/GMRS SK078 A PW-MINI 0 4.70 0. f (MHz) 0 0.4 4.70 0. SK078 PW-MINI 0 4.8 95 0.0 SK077 USQ Driver 0 0.5 0. 0.0 4.8 95 0.00 RFM0U P PW-MINI GMRS 6 7.5..6 470 0. RFM00U7 U USQ Driver 0 0.5 0. 0. 7. 50 0.0 Pi (W) *: New product / 48

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Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT ("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. IF YOU USE PRODUCT FOR UNINTENDED USE, TOSHIBA ASSUMES NO LIABILITY FOR PRODUCT. For details, please contact your TOSHIBA sales representative. Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA () ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND () DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. Product may include products using GaAs (Gallium Arsenide). GaAs is harmful to humans if consumed or absorbed, whether in the form of dust or vapor. Handle with care and do not break, cut, crush, grind, dissolve chemically or otherwise expose GaAs in Product. Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. Product may include products subject to foreign exchange and foreign trade control laws. Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS. In addition to the above, the following are applicable only to development tools. Though TOSHIBA works continually to improve Product s quality and reliability, Product can malfunction or fail. Use the Product in a way which minimizes risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. For using the Product, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information, including without limitation, this document, the instruction manual, the specifications, the data sheets for Product. Product is provided solely for the purpose of performing the functional evaluation of a semiconductor product. Please do not use Product for any other purpose, including without limitation, evaluation in high or low temperature or humidity, and verification of reliability. Do not incorporate Product into your products or system. Products are for your own use and not for sale, lease or other transfer. 製品取り扱い上のお願い 株式会社東芝およびその子会社ならびに関係会社を以下 当社 といいます 本資料に掲載されているハードウエア ソフトウエアおよびシステムを以下 本製品 といいます 本製品に関する情報等 本資料の掲載内容は 技術の進歩などにより予告なしに変更されることがあります 文書による当社の事前の承諾なしに本資料の転載複製を禁じます また 文書による当社の事前の承諾を得て本資料を転載複製する場合でも 記載内容に一切変更を加えたり 削除したりしないでください 当社は品質 信頼性の向上に努めていますが 半導体 ストレージ製品は一般に誤作動または故障する場合があります 本製品をご使用頂く場合は 本製品の誤作動や故障により生命 身体 財産が侵害されることのないように お客様の責任において お客様のハードウエア ソフトウエア システムに必要な安全設計を行うことをお願いします なお 設計および使用に際しては 本製品に関する最新の情報 ( 本資料 仕様書 データシート アプリケーションノート 半導体信頼性ハンドブックなど ) および本製品が使用される機器の取扱説明書 操作説明書などをご確認の上 これに従ってください また 上記資料などに記載の製品データ 図 表などに示す技術的な内容 プログラム アルゴリズムその他応用回路例などの情報を使用する場合は お客様の製品単独およびシステム全体で十分に評価し お客様の責任において適用可否を判断してください 本製品は 特別に高い品質 信頼性が要求され またはその故障や誤作動が生命 身体に危害を及ぼす恐れ 膨大な財産損害を引き起こす恐れ もしくは社会に深刻な影響を及ぼす恐れのある機器 ( 以下 特定用途 という ) に使用されることは意図されていませんし 保証もされていません 特定用途には原子力関連機器 航空 宇宙機器 医療機器 車載 輸送機器 列車 船舶機器 交通信号機器 燃焼 爆発制御機器 各種安全関連機器 昇降機器 電力機器 金融関連機器などが含まれますが 本資料に個別に記載する用途は除きます 特定用途に使用された場合には 当社は一切の責任を負いません なお 詳細は当社営業窓口までお問い合わせください 本製品を分解 解析 リバースエンジニアリング 改造 改変 翻案 複製等しないでください 本製品を 国内外の法令 規則及び命令により 製造 使用 販売を禁止されている製品に使用することはできません 本資料に掲載してある技術情報は 製品の代表的動作 応用を説明するためのもので その使用に際して当社及び第三者の知的財産権その他の権利に対する保証または実施権の許諾を行うものではありません 別途 書面による契約またはお客様と当社が合意した仕様書がない限り 当社は 本製品および技術情報に関して 明示的にも黙示的にも一切の保証 ( 機能動作の保証 商品性の保証 特定目的への合致の保証 情報の正確性の保証 第三者の権利の非侵害保証を含むがこれに限らない ) をしておりません 本製品には GaAs( ガリウムヒ素 ) が使われているものがあります その粉末や蒸気等は人体に対し有害ですので 破壊 切断 粉砕や化学的な分解はしないでください 本製品 または本資料に掲載されている技術情報を 大量破壊兵器の開発等の目的 軍事利用の目的 あるいはその他軍事用途の目的で使用しないでください また 輸出に際しては 外国為替及び外国貿易法 米国輸出管理規則 等 適用ある輸出関連法令を遵守し それらの定めるところにより必要な手続を行ってください 本製品には 外国為替及び外国貿易法により 輸出または海外への提供が規制されているものがあります 本製品の RoHS 適合性など 詳細につきましては製品個別に必ず当社営業窓口までお問い合わせください 本製品のご使用に際しては 特定の物質の含有 使用を規制する RoHS 指令等 適用ある環境関連法令を十分調査の上 かかる法令に適合するようご使用ください お客様がかかる法令を遵守しないことにより生じた損害に関して 当社は一切の責任を負いかねます 上記に加えて 以下は開発ツールのみに適用されます 当社は品質 信頼性の向上に努めていますが 本製品は誤作動または故障する場合があります 本製品をご使用頂く場合は 本製品の誤作動や故障により生命 身体 財産が侵害されることのないようにご使用ください 本製品をご使用頂く場合は 本製品に関する最新の情報 ( 本資料 取扱説明書 仕様書 データシートなど ) をご確認の上 これに従ってください 本製品は 半導体製品の機能評価に使用されることを意図しています 機能評価以外の目的 ( 温度 湿度特性評価 信頼性評価など ) には使用しないでください 本製品をお客様の製品に組み込まないでください また 本製品を販売 譲渡 貸与等しないでください お問い合わせ先 08 https://toshiba.semicon-storage.com/