TII 0007J03

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1

2 µs µs θ µs µs Feature 1 (%) TII B0113JC GaAsP -74 GaAsP -73 GaAs Cs-Te (nm)

3 Feature 2 Feature 3 Feature 4 Feature 5 Feature 6 Vk = 200 V Vk = 800 V 2

4 MCP () () ( ) 0 ON (a) VG -200V 0V C R VB MCP VMCP VS : VB= +30 V VG= -230 V () TII C0046JB VMCP VS VB VG...MCP-in MCP-out...MCP-out TII C0047JA 0 (b) MCP +30V 0V C R VB VMCP VS TII C0048JA TII C0051JD 3

5 λ 100 λ λ π 4

6 10 mm) A 16 mm) A 10 mm) µsµs B 1 ms µsµs B µs C A B C 5

7 TII B0099JB 100 TII B0078JH 100 P47 80 P P24 P TII B0079JH 10 2 P43 DC* P47 P ns 100 ns 100 ns 1 ms 1 ms 8 na/cm P24 (s) 1 ms * µ TMCPC0002JD µm TMCPC0079JA 6

8 V7090A-71 V9569A-71 V8070A-73 V9501A-73 V8070A-74 V9501A-74 V6833P V6833P-G V7090P (nm) A (nm) GaAs GaAsP GaAsP GaAs (mm) A B C D B C 18 mm V6886U V4170U 7

9 V A BCDE mm 25 mm 5 ns V6887U V4183U V7669U V10308U V7670U V10309U C 5 ns D 8

10 4 10 mm 1 16 mm 1 V7090U/D V8070U/D V9569U/D V9501U/D V6833P, V7090P 2 V6833P-G 2 ( 3 (µ 4 V6886U V6887U V4170U V4183U V6886U V6887U V4170U V4183U V6886U V6887U V4170U V4183U V7669U V7670U V10308U V10309U V7669U V7670U V10308U V10309U V7669U V7670U V10308U V10309U : *1: 588 nm, *2: nm, *3: 254 nm 5 6 ( (µ 9

11 6 5 5 C C 10

12 100 TII B0100JD 100 TII B0077JF MCP MTF (%) MCP MTF (%) MCP (Lp/mm) (Lp/mm) 10 8 TII B0076JD TII B0101JE MCP (lm/m 2 /lx) MCP (lm/cm 2 ) GaAs MCP (V) ( C) 10 3 TII B0075JD 10 0 TII B0045JB (lm/m 2 ) MCP-in MCP-out=900 V dc MCP-out =6000 V dc (lx) (V) 11

13 MCP VK VMCP VS 150 V 200 V MCP V 1000 V 5000V 6000 V MCP V 2000 V TII C0017JF VG C R VB VMCP VS VB= +30 V VG= -230 V VB= -200 V VG= +230 V TII C0018JC TII C0019JF 12

14 A 5.5 ± ± ± ± MCP A ± ± 0.6 TII A0043JE MCP A ± ± ± ± ± 0.2 A ± TII A0053JG 18 MIN A 5.5 ± ± ± ± MIN. TYPE No. A V6886U, V6887U 1.7 ± 0.6 V4170U, V4183U 1.3 ± 0.7 TII A0033JF 13

15 TYPE No. A B V7669U, V7670U 5.94 ± ± MIN B A ± ± ± MIN. V10308U, V10309U 5.53 ± ± 0.7 TII A0018JD 5.94 ± 0.1 A 2.2 ± ± A 0.5 ± ± ± TII A0063JB 5.94 ± 0.1 A 0.8 ± ± 0.6 B 18.8 ± ± A 0.5 ± ± 0.1 B TII A0064JB 14

16 31.0 ± MIN. 5.5 ± ± ± 1 (+2 V +3 V) MIN R ± GND TII A0031JG 1.6 ± ± ± 0.15 GND R ± ± ± ± ± 0.5 R18 ± ± 0.15 TII A0048JF 15

17 16

18 1 MCP-in MCP-out MCP-out (µ (µ 1 ± ± ± KKKK KKKK KKKK KKKK 1 1 MCP-in MCP-out MCP-out 4 (µ (µ 1 KKKK ±0.5 2 KKKK KKKK KKKK E5 E6 E7 E8 E1 E2 E3 E4 E5 E6 E7 E8 E1 E2 E3 E4 FEP (18 kv) M No4-40 UNC MIN No4-40 UNC FEP (18 kv) 200 MIN. E1: E2: MCP-in (GND) E3: MCP-out E4: E5: E6: GND E7: E8: TII A0051JA TII A0052JA TII A0070JA ± ± 1.0 TII A0069JA

19 3 nm % 1 µ 1 2 NOTE:

20 TII 0007J03 SEPT IP (500)

µµ InGaAs/GaAs PIN InGaAs PbS/PbSe InSb InAs/InSb MCT (HgCdTe)

µµ InGaAs/GaAs PIN InGaAs PbS/PbSe InSb InAs/InSb MCT (HgCdTe) 1001 µµ 1.... 2 2.... 7 3.... 9 4. InGaAs/GaAs PIN... 10 5. InGaAs... 17 6. PbS/PbSe... 18 7. InSb... 22 8. InAs/InSb... 23 9. MCT (HgCdTe)... 25 10.... 28 11.... 29 12. (Si)... 30 13.... 33 14.... 37

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