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れいななつ
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1 COPAL ELECTRONICS 32 (DP) DP INC RH RL RWB 32 C S U/D INC U/D CS 2 2 DP SOIC CMOS 2.5 V V / 10 kω 50 kω 100 kω TSSOP MSOP /BFR INC / U/D RH RoHS GND RWB RL CS VCC :

2 R = 2 = 10 k 4 = 50 k 5 = 100 k L = 4 = (NiPdAu) A = CAT5112V = I = ( ) Y = 1 M = 1-9, A, B, C O, N, D XXXX = No. 4 ABPN = ZI-10-GT3 ABPP = ZI-50-GT3 Y = 1 M = 1-9, A, B, C O, N, D P = A2 = R = 2 = 10 k 4 =50 k 5 = 100 k L = 4 = (NiPdAu) Y = 1 M = 1-9, A, B, C O, N, D XXX = No POT 2

3 INC INC U/D U/D U/D U/D H CS L INC H L R H U/ D CS L INC H L R L R H R H R L R H V CC GND R WB R WB INC U/D CS R L R L R H R L V CC GND R H R L R H R L R WB R H R L 32 R H R L INC U/D CS 5 INC CS CS L U/D INC INC H L INC H CS H INC L CS L CS H INC U/D 3

4 1. INC CS U/D High to Low Low High Wiper toward R H High to Low Low Low Wiper toward R L High Low to High X Store Wiper Position Low Low to High X No Store, Return to Standby X High X Standby V CC to GND V CS to GND -0.5 V CC +0.5 V INC to GND -0.5 V CC +0.5 V U/D to GND -0.5 V CC +0.5 V R H to GND -0.5 V CC +0.5 V R L to GND -0.5 V CC +0.5 V R WB to GND -0.5 V CC +0.5 V ( I ) (10s max) Min Typ Max V ZAP ( 1) ESD MIL-STD-883, Test Method V I LTH ( 1, 2) JEDEC Standard ma T DR MIL-STD-883, Test Method Years N END MIL-STD-883, Test Method ,000,000 Stores V V CC +1 V 100 ma 4

5 4. DC (V CC = +2.5 V +6 V) Min Typ Max V CC V I CC1 V CC = 6 V, f = 1 MHz, I W = μa V CC = 6 V, f = 250 khz, I W = μa I CC2 Programming, V CC = 6 V μa V CC = 3 V μa I SB1 ( 4) CS = VCC 0.3 V μa U/D, INC = VCC 0.3 V or GND Min Typ Max I IH (H ) V IN = V CC μa I IL (L ) V IN = 0 V μa V IH1 H (TTL) 4.5 V V CC 5.5 V 2 - V CC V V IL1 L (TTL) V V IH2 H (CMOS) 2.5 V V CC 6 V V CC x V CC V L (CMOS) V CC x 0.2 V V IL2 Min Typ Max R POT -10 Device 10 kω -50 Device Device 100 ±20 % V RH R H 0 V CC V V RL R L 0 V CC V 1 % INL I W 2 μa LSB DNL I W 2 μa LSB R OUT 0.05 V CC V WB 0.95 V CC, 1 Ω V CC = 5 V I OUT 0.05 V CC V WB 0.95 V CC, 3 ma V CC = 5 V TC RPOT 300 ppm/ TC RATIO 20 ppm/ C RH /C RL /C RW 8/8/25 pf f C Passive Attenuator, 10 kω 1.7 MHz V WB(SWING) I OUT 100 μa, V CC = 5 V 0.01V CC 0.99V CC V V CC +1 V 100 ma 5. I W = 6. 5

6 5. AC V CC 2.5 V V CC 6 V 0.2 V CC to 0.7 V CC 10 ns 0.5 V CC 6. AC (V CC = +2.5 V +6.0 V, V H = V CC, V L = 0 V) Min Typ Max ( 7) t CI CS to INC Setup ns t DI U/D to INC Setup ns t ID U/D to INC Hold ns t IL INC LOW Period ns t IH INC HIGH Period ns t IC INC Inactive to C S Inactive μs t CPH CS Deselect Time (NO STORE) ns t CPH CS Deselect Time (STORE) ms t IW INC to VOUT Change μs t CYC INC Cycle Time μs t R, t F ( 8) INC Input Rise and Fall Time μs t PU, ( 8) Power-up to Wiper Stable ms t WR Store Cycle ms ( 9) 4. AC 9. A.C. MI 6

7 SOIC 8, 150 mils (1) mm (2) JEDEC MS-012 7

8 TSSOP 8, 4.4x3 (1) mm (2) JEDEC MO-153 8

9 MSOP 8, 3x3 (1) mm (2) JEDEC MO-187 9

10 ( DP 12) V 7112 I -10 -G T3 & T: & 3: 3,000/ V: SOIC Y: TSSOP Z: MSOP I: (-40 G: NiPdAu +85 ) -10: 10 k -50: 50 k -00: 100 k (注記13) 7. Orderable Part Number Resistance (k VI-10-GT3 10 VI-50-GT3 50 VI-00-GT3 100 YI-10-GT3 10 YI-50-GT3 50 YI-00-GT3 100 ZI-10-GT3 10 ZI-50-GT RoHS NiPdAu VI 10-GT3 (SOIC ) Package-Pins Lead Finish SOIC-8 NiPdAu TSSOP-8 NiPdAu MSOP-8 NiPdAu ( ) 10 k NiPdAu 13. 入手可能かどうかについては弊社までお問い合わせ下さい Typ. 10 & 3,000/ )

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untitled COPAL ELECTRONICS 100 タップデジタルポテンショメータ (DP) 概要 DP7113は機械式のポテンショメータや可変抵抗器の代わりとなるプログラム可能なデジタル式ポテンショメータです製品の生産ラインで自動化された調整は理想的と言えます DPはそれを可能にしまた定期的な調整を必要としている機器において操作が難しいか又は危険な場合や遠隔地にあるアプリケーションに適しています