2008-11/13 12 4 12 5 401 501 702 401 501 A-1 9:00-10:30 B-1 9:15-10:30 C-1 9:00-10:30 A-5 9:00-10:30 B-5 9:15-10:30 A A-2 10:45-12:15 B-2 10:45-12:15 C-2 10:45-12:15 A-6 10:45-12:15 B-6 10:45-12:15 A B A-3 13:30-15:00 B-3 13:30-15:00 C-3 13:30-15:15 A-7 13:30-15:15 B-7 13:30-15:00 A-4 1515-16:30 B-4 1515-16:30 C-4 1530-16:45 17:00 ~ 17:30 3 18:00~ 19:30 i
2008-11/13 A-1 9:00-10:30 4aA01 9:00-9:15 (Ba,A)(Bi,Pb)O 3 (A=K,Cs) 4aA02 9:15-9:30 LiTi 2 O 4 4aA03 9:30-9:45 CaPdH 3-δ 1, 2 1 2 1 1, 2, 1 4aA04 9:45-10:00 3d,,,, 4aA05 10:00-10:15 Li 4aA06 10:15-10:30 Pr 1-x LaCe x CuO 4-δ (x=0.11-0.20) 10:30-10:45 A-2 10:45-12:15 4aA07 10:45-11:00 Fe La 2-x Sr x Cu 1-y Fe y O 4 x=0.22 1 2 1 1 2 2 1 4aA08 11:00-11:15 La 2-x Sr x Cu 1-y Ni y O 4 Ni 1 2 1 2 2 2 4aA09 11:15-11:30 Nb 3 Sn 3 4aA10 11:30-11:45 CVD HoBa 2 Cu 3 O y 4aA11 11:45-12:00 HTS J c 1 2 3 1 1 1 2 3 1 1 4aA12 12:00-12:15 R s 1 2 1 1 1 1 2 2 1 12:15-13:30 ii
2008-11/13 B-1 A 9:15-10:30 4aB01 9:15-9:30, 4aB02 9:30-9:45 n SOI MOSFET δ 1 NTT 2 1 2 1 4aB03 9:45-10:00 Body Bias SOI-nMOSFET 4aB04 10:00-10:15 Si(100)-(2x1) STM 1 2 1 1 1 2 2 4aB05 10:15-10:30 Fe n Si(100) Fe 10:30-10:45 B-2 A B 10:45-12:15 4aB06 10:45-11:00 Si(100) Cr 4aB07 11:00-11:15 Si(100) P Sb 4aB08 11:15-11:30 Si(110) 4aB09 11:30-11:45 SiC/Mo Pt/Mo MoO 2 1 2 1 1 1 1 2 2 4aB10 11:45-12:00 1 2 1 1 1 2 2 4aB11 12:00-12:15 ZnO 1 2 1 1 1 2 1 12:15-13:30 iii
2008-11/13 C-1, 9:00-10:30 4aC01 9:00-9:15 4aC02 9:15-9:30 1 2 1 1 1 1 1,2 2 2 4aC03 9:30-9:45 BaO-TiO 2 -GeO 2 1 2 1 1 1 1 1 2 2 4aC04 9:45-10:00 1 2 1 1 1 2 4aC05 10:00-10:15 NH 3 Low-k 1 2 1 1 1 2 2 2 4aC06 10:15-10:30 10:30-10:45 C-2 10:45-12:15 4aC07 10:45-11:00 PS 4aC08 11:00-11:15 /Ta 2 O 5 /Ta 1 2 1 1 1 2 2 2 2 4aC09 11:15-11:30 Au/Nb 2 O 5 /Nb - 1 2 1 1 1 2 2 2 2 2 4aC10 11:30-11:45 (Mn 1-x Fe x )Si γ 1, 2 1 1 1 2 1 4aC11 11:45-12:00 Na x CoO 2 Na 1 2 1 1 2 1 4aC12 12:00-12:15 Ca 2 Mn 1-x Mo x O 4 12:15-13:30 iv
2008-11/13 A-3 13:30-15:00 4pA01 13:30-13:45 MgO-MTJ 4pA02 13:45-14:00 CoFeB/Ru/CoFeB MTJ 1 2 1,2, 1, 1, 1, 1, 1, 1 4pA03 14:00-14:15 CoFeB/MgO/CoFeB MgO 1, WPI 2 1, 2, 1, 1 4pA04 14:15-14:30 Magneto-resistance effect in CoFeB/MgO/CoFe/MgO/CoFeB double-barrier Magnetic Tunnel Junctions Department of Applied Physics, Graduate School of Engineering, Tohoku Univ. Jiang Lixian, H. Naganuma, M. Oogane, S. Mizukami and Y. Ando 4pA05 14:30-14:45 CoFeB 1 2 3 1 2,3 3 3 1 1 4pA06 14:45-15:00 CoPt/Co 2 MnSi 1 2 1,* 1 2 1 1 1 15:00-15:15 A-4 15:15-16:30 4pA07 15:15-15:30 Co 2 MnSi MgO TMR 1 2 1 2 1 2 1 4pA08 15:30-15:45 4pA09 15:45-16:00 1 WPI 2 3 1 2 3 1 3 1 4pA10 16:00-16:15 Magnetic and electrical transport properties of Mn 2.5 Ga films WPI advanced Institute for Material Research (WPI-AIMR), Tohoku University 1, Department of Applied Physics, Graduate School of Engineering, Tohoku University 2 F. Wu 1, S. Mizukami 1, D. Watanabe 1, M. Oogane 2, Y. Ando 2, T. Miyazaki 1 4pA11 16:15-16:30 17:00 17:30 18:00 19:30 3 v
2008-11/13 B-3 13:30-15:00 4pB01 13:30-13:45 1 2 1 1 2 2 1 4pB02 13:45-14:00 1, 2 1 1 1 2 4pB03 14:00-14:15 1 2 3 1 1 3 3 1 2 3 3 4pB04 14:15-14:30 GaP 4pB05 14:30-14:45 CW Terahertz-wave Generation system with Laser diode pumping for applications in high resolution spectroscopy S. Ragam, T. Tanabe, Y. Oyama, J. Nishizawa 4pB06 14:45-15:00 15:00-15:15 B-4 15:15-16:30 4pB07 15:15-15:30 GaAsP 2 4pB08 15:30-15:45 Tm/Ho Q Tm,Ho:YLF 1 2 NIMS 3 NICT 4 1,2, 2, 2 1,2, 3, Encarnacion G. Villora 3, 4, 4, 4 4pB09 15:45-16:00 0.9μm Nd 1 2 NICT 3 1 1, 1,2, 1,2, 3, 3, 3 4pB10 16:00-16:15 Yb 4pB11 16:15-16:30 Herbani Yuliati, 17:00 17:30 18:00 19:30 3 vi
2008-11/13 C-3 13:30-15:15 4pC01 13:30-13:45,, 4pC02 13:45-14:00 Pd-Au EL Au AFM 4pC03 14:00-14:15 TTF-TCNQ 1, 2 1 Efrain Eduardo Tamayo Ruiz 2 1 1 4pC04 14:15-14:30 P3HT 4pC05 14:30-14:45 1 2 1, 1, 1, 2, 1, 1,2 4pC06 14:45-15:00 1 2 1 1 2 1 1,2 4pC07 15:00-15:15 1 2 1 2 1 1 15:15-15:30 C-4 15:30-16:45 4pC08 15:30-15:45 1 (TU-WPI) 2 1, 1, 2 4pC09 15:45-16:00 4pC10 16:00-16:15 4pC11 16:15-16:30 4pC12 16:30-16:45 17:00 17:30 18:00 19:30 3 vii
2008-11/13 A-5 9:00-10:30 5aA01 9:00-9:15 Cu Nd-Fe-B 1 NICHe 2 3 1 1 2 1 3 1,2 5aA02 9:15-9:30 Nd(Dy)-Fe-B 1 NICHe 2 3 1 1 2 1 3 1,2 5aA03 9:30-9:45 Nd-Fe-B/Ta 1 NICHe 2 3 1 1 2 3 1,2 5aA04 9:45-10:00 Nd 2 Fe 14 B 1 2 1,2 1 1 5aA05 10:00-10:15 1 SrCuO 2 1 2 1 2 1 1 1 5aA06 10:15-10:30 1 Sr 2 V 3 O 9 1 2 3 1 2 1 1 3 3 1 10:30 10:45 A-6 10:45-12:15 5aA07 10:45-11:00 GSGG:Ce 5aA08 11:00-11:15 5aA09 11:15-11:30 5aA10 11:30-11:45 GaAs sub-thz TUNNETT Diodes Implemented with Molecular Layer Epitaxy and Its Application to 0.2THz Integrated Patch Antenna Oscillators Balasekaran Sundararajan, Kazuomi Endo, Tadao Tanabe and Yutaka Oyama 5aA11 11:45-12:00 LiNbO 3 (PPLN) 5aA12 12:00-12:15 12:15-13:30 viii
2008-11/13 B-5 9:15-10:30 5aB01 9:15-9:30 1 2 2 1 1,2 5aB02 9:30-9:45 1 2 2 1 2 1,2 1,2 5aB03 9:45-10:00 1 2 2 1 1 1 1,2 1,2 5aB04 10:00-10:15 1 2 3 1 1 3 2 5aB05 10:15-10:30 ESR XPS SrAl 2 O 4 :Eu, Dy 1 2 1 1 2 2 2 2 10:30-10:45 B-6 10:45-12:15 5aB06 10:45-11:00 CVD 1 CRESTJST 2 JASRI 3 4 1 1,2 1,2 2,3 2,3 2,4 1,2 5aB07 11:00-11:15 Si(110) 1 2 SPring-8 3 4 5 1 1 1 1 1 2 3 3 4 4, 5 5aB08 11:15-11:30 CVD Si 1 2 3 1 1 1 1 2 2 3 5aB09 11:30-11:45 ECR Ar CVD B Si 5aB10 11:45-12:00 ECR CVD Ge Si 5aB11 12:00-12:15 CVD Si/Si 1-x Ge x /Si(100) N 12:15-13:30 ix
2008-11/13 A-7 13:30-15:15 5pA01 13:30-13:45 1 2 1 1 2 5pA02 13:45-14:00 1.3μm OCT in vivo-in situ 1 2 1 2 1 5pA03 14:00-14:15 1.3 μm OCT M. S. Hrebesh 5pA04 14:15-14:30 0.8μm OCT 1 2 1 M. S. Hrebesh 2 2 5pA05 14:30-14:45 IM-SSB SSB 5pA06 14:45-15:00 SSB LN 5pA07 15:00-15:15 SSB IM-DD x
2008-11/13 B-7 13:30-15:00 5pB01 13:30-13:45 PL 1 2 1 1 1 2 1 1 5pB02 13:45-14:00 1mm TlBr 5pB03 14:00-14:15 TlBr 5pB04 14:15-14:30 X 2 5pB05 14:30-14:45 X,,, 5pB06 14:45-15:00 20 xi