特長 n n 2.5V n 1 55μA n 4.5V 38V n 0.8V V OUT 24V n 60V n R SENSE DCR n Burst Mode MOSFET 100% n フェーズロック可能な周波数 :75kHz~850kHz n プログラム可能な固定周波数 :50kHz ~900kHz n 軽負荷時に連続動作 パルス スキップ動作または低リップル BurstMode 動作を選択可能 n 非常に低い降圧ドロップアウト動作 :99% デューティサイクル n 出力電圧のソフトスタートまたはトラッキングを調整可能 n シャットダウン時の低消費電流 :14μA n 小型 38ピン 5mm 7mm QFNおよび TSSOPパッケージ アプリケーション n 車載向け常時オンおよびスタート ストップシステム n バッテリ駆動デジタル機器 n DC 分散電源システム n 複数出力の昇降圧アプリケーション 概要 LTC3859A 改善された Burst Mode 動作を備えた 低消費電流 トリプル出力の降圧 / 降圧 / 昇圧同期整流式コントローラ LTC 3859A N MOSFET / / DC/DC 850kHz LTC3859A 4.5V 38V 2.5V 55μA OPTI-LOOP ESR LTC3859A 0.8V 1.2V PLLIN/MODE Burst Mode LTC3859 LTC3859A Burst Mode L LT LTC LTM Burst Mode OPTI-LOOP および µmodule はリニアテクノロジー社の登録商標です No R SENSE はリニアテクノロジー社の商標です 他の全ての商標はそれぞれの所有者に所有権があります 5481178 5705919 5929620 6144194 6177787 6580258 を含む米国特許によって保護されています 標準的応用例 V OUT3 REGULATED AT 10V WHEN V IN < 10V FOLLOWS V IN WHEN V IN > 10V V IN 2.5V TO 38V (START-UP ABOVE 5V) 220µF 2mΩ 220µF 499k 1.2µH 4.7µF SW1, 2, 3 68.1k 1µF V FB3 TG3 SW3 BG3 SENSE3 SENSE3 + INTV CC BOOST1, 2, 3 I TH1, 2, 3 V BIAS LTC3859A TG1 SW1 BG1 SENSE1 + SENSE1 V FB1 RUN1, 2, 3 EXTV CC TG2 SW2 BG2 V OUT1 4.9µH 6mΩ 68.1k 357k 6.5µH 8mΩ V OUT1 5V 5A 220µF V OUT2 8.5V 3A EFFICIENCY (%) 100 95 V OUT2 = 8.5V 90 V OUT1 = 5V 85 80 75 70 65 60 55 FIGURE 12 CIRCUIT I LOAD = 2A 50 0 5 10 15 20 25 30 35 INPUT VOLTAGE (V) 40 3859A TA01b TRACK/SS1, 2 SS3 PGND SGND SENSE2+ SENSE2 V FB2 68.1k 649k 68µF 3859 TA01a 1
絶対最大定格 Note 1 3 バイアス入力電源電圧 (V BIAS )... 0.3V~40V 降圧コントローラのトップサイド ドライバ電圧 (BOOST1 BOOST2)... 0.3V ~46V 昇圧コントローラのトップサイド ドライバ電圧 (BOOST3)... 0.3V~76V 降圧コントラーラのスイッチ電圧 (SW1 SW2)... 5V~40V 昇圧コントローラのスイッチ電圧 (SW)... 5V ~70V INTV CC (BOOST1 SW1) (BOOST2 SW2) (BOOST3 SW3)... 0.3V~6V RUN1 RUN2 RUN3... 0.3V~8V 8V を超えるソースからピンにソースされる最大電流... 100µA SENSE1 + SENSE2 + SENSE1 SENSE2 の電圧... 0.3V ~28V SENSE3 + SENSE3 の電圧... 0.3V~40V FREQ の電圧... 0.3V~INTV CC EXTV CC... 0.3V ~14V I TH1 I TH2 I TH3 V FB1 V FB2 V FB3 の電圧... 0.3V ~6V PLLIN/MODE PGOOD1 OV3 の電圧... 0.3V~6V TRACK/SS1 TRACK/SS2 SS3 の電圧... 0.3V ~6V 動作接合部温度範囲 (Note 2) LTC3859AE, LTC3859AI... 40 C ~125 C LTC3859AH... 40 C ~150 C LTC3859AMP... 55 C~150 C 保存温度範囲... 65 C~150 C ピン配置 I TH1 1 V FB1 2 SENSE1 + 3 SENSE1 4 FREQ 5 PLLIN/MODE 6 SS3 7 SENSE3 + 8 SENSE3 9 V FB3 10 I TH3 11 SGND 12 RUN1 13 RUN2 14 RUN3 15 SENSE2 16 SENSE2 + 17 V FB2 18 I TH2 19 TOP VIEW 39 PGND 38 TRACK/SS1 37 PGOOD1 36 TG1 35 SW1 34 BOOST1 33 BG1 32 SW3 31 TG3 30 BOOST3 29 BG3 28 V BIAS 27 EXTV CC 26 INTV CC 25 BG2 24 BOOST2 23 SW2 22 TG2 21 OV3 20 TRACK/SS2 FE PACKAGE 38-LEAD PLASTIC TSSOP T JMAX = 150 C, q JA = 25 C/W EXPOSED PAD (PIN 39) IS PGND, MUST BE SOLDERED TO PCB FREQ PLLIN/MODE SS3 SENSE3 + SENSE3 V FB3 I TH3 1 2 3 4 5 6 7 SGND 8 RUN1 9 RUN2 10 RUN3 11 SENSE2 12 TOP VIEW SENSE1 SENSE1 + V FB1 I TH1 TRACK/SS1 PGOOD1 TG1 38 37 36 35 34 33 32 39 PGND 13 14 15 16 17 18 19 SENSE2 + V FB2 I TH2 TRACK/SS2 OV3 TG2 SW2 31 SW1 30 BOOST1 29 BG1 28 SW3 27 TG3 26 BOOST3 25 BG3 24 V BIAS 23 EXTV CC 22 INTV CC 21 BG2 20 BOOST2 UHF PACKAGE 38-LEAD (5mm 7mm) PLASTIC QFN T JMAX = 150 C, q JA = 34.7 C/W EXPOSED PAD (PIN 39) IS PGND, MUST BE SOLDERED TO PCB 2
発注情報 * LTC3859AEFE#PBF LTC3859AEFE#TRPBF LTC3859AFE 38-Lead Plastic TSSOP 40 C to 125 C LTC3859AIFE#PBF LTC3859AIFE#TRPBF LTC3859AFE 38-Lead Plastic TSSOP 40 C to 125 C LTC3859AHFE#PBF LTC3859AHFE#TRPBF LTC3859AFE 38-Lead Plastic TSSOP 40 C to 150 C LTC3859AMPFE#PBF LTC3859AMPFE#TRPBF LTC3859AFE 38-Lead Plastic TSSOP 55 C to 150 C LTC3859AEUHF#PBF LTC3859AEUHF#TRPBF 3859A 38-Lead (5mm 7mm) Plastic QFN 40 C to 125 C LTC3859AIUHF#PBF LTC3859AIUHF#TRPBF 3859A 38-Lead (5mm 7mm) Plastic QFN 40 C to 125 C LTC3859AHUHF#PBF LTC3859AHUHF#TRPBF 3859A 38-Lead (5mm 7mm) Plastic QFN 40 C to 150 C LTC3859AMPUHF#PBF LTC3859AMPUHF#TRPBF 3859A 38-Lead (5mm 7mm) Plastic QFN 55 C to 150 C さらに広い動作温度範囲で規定されるデバイスについては 弊社または弊社代理店にお問い合わせください * 温度グレードは出荷時のコンテナのラベルで識別されます 鉛フリー仕様の製品マーキングの詳細については http://www.linear-tech.co.jp/leadfree/ をご覧ください テープアンドリールの仕様の詳細については http://www.linear-tech.co.jp/tapeandreel/ をご覧ください 電気的特性 lt A 25 C V BIAS 12V V RUN1,2,3 5V EXTV CC 0V Note 2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS V BIAS Bias Input Supply Operating Voltage Range 4.5 38 V V FB1,2 Buck Regulated Feedback Voltage (Note 4); I TH1,2 Voltage = 1.2V 40 C to 85 C, All Grades LTC3859AE, LTC3859AI LTC3859AH, LTC3859AMP V FB3 Boost Regulated Feedback Voltage (Note 4); I TH3 Voltage = 1.2V 40 C to 85 C, All Grades LTC3859AE, LTC3859AI LTC3859AH, LTC3859AMP I FB1,2,3 Feedback Current (Note 4) 10 ±50 na V REFLNREG Reference Voltage Line Regulation (Note 4); V IN = 4V to 38V 0.002 0.02 %/V V LOADREG Output Voltage Load Regulation (Note 4) Measured in Servo Loop; l 0.01 0.1 % DI TH Voltage = 1.2V to 0.7V Measured in Servo Loop; DI TH Voltage = 1.2V to 2V l 0.01 0.1 % g m1,2,3 Transconductance Amplifier g m (Note 4); I TH1,2,3 = 1.2V; Sink/Source 5µA 2 mmho l l l l 0.792 0.788 0.786 1.188 1.182 1.179 0.800 0.800 0.800 1.200 1.200 1.200 0.808 0.812 0.812 1.212 1.218 1.218 V V V V V V 3
電気的特性 lt A 25 C V BIAS 12V V RUN1,2,3 5V EXTV CC 0V Note 2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I Q Input DC Supply Current (Note 5) Pulse-Skipping or Forced Continuous Mode (One Channel On) Pulse-Skipping or Forced Continuous Mode (All Channels On) Sleep Mode (One Channel On, Buck) Sleep Mode (One Channel On, Boost) Sleep Mode (Buck and Boost Channel On) Sleep Mode (All Three Channels On) RUN1 = 5V and RUN2,3 = 0V or RUN2 = 5V and RUN1,3 = 0V or RUN3 = 5V and RUN1,2 = 0V V FB1, 2 ON = 0.83V (No Load) V FB3 = 1.25V RUN1,2,3 = 5V, V FB1,2 = 0.83V (No Load) V FB3 = 1.25V RUN1 = 5V and RUN2,3 = 0V or RUN2 = 5V and RUN1,3 = 0V V FB,ON = 0.83V (No Load) RUN3 = 5V and RUN1,2 = 0V V FB3 = 1.25V RUN1 = 5V and RUN2 = 0V or RUN2 = 5V and RUN1 = 0V RUN3 = 5V V FB1,2 = 0.83V (No Load) V FB3 = 1.25V RUN1,2,3 = 5V, V FB1,2 = 0.83V (No Load) V FB3 = 1.25V 1.5 ma 3 ma 55 80 µa 55 80 µa 65 100 µa 80 120 µa 7 10 13 % Shutdown RUN1,2,3 = 0V 14 30 µa UVLO Undervoltage Lockout INTV CC Ramping Up l 4.15 4.5 V INTV CC Ramping Down l 3.5 3.8 4.0 V V OVL1,2 Buck Feedback Overvoltage Protection Measured at V FB1,2 Relative to Regulated V FB1,2 I SENSE1,2 + SENSE + Pin Current Bucks (Channels 1 and 2) ±1 µa I SENSE3 + SENSE + Pin Current Boost (Channel 3) 170 µa I SENSE1,2 SENSE Pin Current Bucks (Channels 1 and 2) V OUT1,2 < V INTVCC 0.5V V OUT1,2 > V INTVCC + 0.5V 700 I SENSE3 SENSE Pin Current Boost (Channel 3) V SENSE3 +, V SENSE3 = 12V DF MAX,TG Maximum Duty Factor for TG Bucks (Channels 1,2) in Dropout, FREQ = 0V Boost (Channel 3) in Overvoltage DF MAX,BG Maximum Duty Factor for BG Bucks (Channels 1,2) in Overvoltage Boost (Channel 3) 98 99 100 100 96 ±2 µa µa ±1 µa I TRACK/SS1,2 Soft-Start Charge Current V TRACK/SS1,2 = 0V 0.7 1.0 1.4 µa I SS3 Soft-Start Charge Current V SS3 = 0V 0.7 1.0 1.4 µa V RUN1 ON V RUN2,3 ON RUN1 Pin Threshold RUN2,3 Pin Threshold V RUN1 Rising V RUN2,3 Rising V RUN1,2,3 Hyst RUN Pin Hysteresis 80 mv V SENSE1,2,3(MAX) Maximum Current Sense Threshold V FB1,2 = 0.7V, V SENSE1,2 = 3.3V l 43 50 57 mv V FB1,2,3 = 1.1V, V SENSE3 + = 12V V SENSE3(CM) SENSE3 Pins Common Mode Range (BOOST Converter Input Supply Voltage) 2.5 38 V l l 1.19 1.23 1.25 1.28 1.31 1.33 % % % % V V 4
電気的特性 lt A 25 C V BIAS 12V V RUN1,2,3 5V EXTV CC 0V (Note 2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS TG1,2 BG1,2 TG3 BG3 TG1,2,3 t r TG1,2,3 t f BG1,2,3 t r BG1,2,3 t f TG/BG t 1D BG/TG t 1D Pull-Up On-Resistance Pull-Down On-Resistance Pull-Up On-Resistance Pull-Down On-Resistance Pull-Up On-Resistance Pull-Down On-Resistance Pull-Up On-Resistance Pull-Down On-Resistance TG Transition Time: Rise Time Fall Time BG Transition Time: Rise Time Fall Time Top Gate Off to Bottom Gate On Delay Synchronous Switch-On Delay Time Bottom Gate Off to Top Gate On Delay Top Switch-On Delay Time (Note 6) C LOAD = 3300pF C LOAD = 3300pF (Note 6) C LOAD = 3300pF C LOAD = 3300pF C LOAD = 3300pF Each Driver Bucks (Channels 1, 2) Boost (Channel 3) C LOAD = 3300pF Each Driver Bucks (Channels 1, 2) Boost (Channel 3) t ON(MIN)1,2 Buck Minimum On-Time (Note 7) 95 ns t ON(MIN)3 Boost Minimum On-Time (Note 7) 120 ns INTV CC Linear Regulator V INTVCCVBIAS Internal V CC Voltage 6V < V BIAS < 38V, V EXTVCC = 0V, I INTVCC = 0mA 5.0 5.4 5.6 V V LDOVBIAS INTV CC Load Regulation I CC = 0mA to 50mA, V EXTVCC = 0V 0.7 2 % V INTVCCEXT Internal V CC Voltage 6V < V EXTVCC < 13V, I INTVCC = 0mA 5.0 5.4 5.6 V V LDOEXT INTV CC Load Regulation I CC = 0mA to 50mA, V EXTVCC = 8.5V 0.7 2 % V EXTVCC EXTV CC Switchover Voltage EXTV CC Ramping Positive 4.5 4.7 V V LDOHYS EXTV CC Hysteresis 200 mv f 25k Programmable Frequency R FREQ = 25k; PLLIN/MODE = DC Voltage 115 khz f 65k Programmable Frequency R FREQ = 65k; PLLIN/MODE = DC Voltage 375 440 505 khz f 105k Programmable Frequency R FREQ = 105k; PLLIN/MODE = DC Voltage 835 khz f LOW Low Fixed Frequency V FREQ = 0V PLLIN/MODE = DC Voltage 320 350 380 khz f HIGH High Fixed Frequency V FREQ = INTV CC ; PLLIN/MODE = DC Voltage 485 535 585 khz f SYNC Synchronizable Frequency PLLIN/MODE = External Clock l 75 850 khz PGOOD1 V PGL1 PGOOD1 Voltage Low I PGOOD1 = 2mA 0.2 0.4 V I PGOOD1 PGOOD1 Leakage Current V PGOOD1 = 5V ±1 µa V PG1 PGOOD1 Trip Level V FB1 with Respect to Set Regulated Voltage V FB1 Ramping Negative 13 10 7 % Hysteresis 2.5 % V FB1 Ramping Positive 7 10 13 % Hysteresis 2.5 % 2.5 1.5 2.4 1.1 1.2 1.0 1.2 1.0 25 16 28 13 30 70 30 70 Ω Ω Ω Ω Ω Ω Ω Ω ns ns ns ns ns ns ns ns 5
電気的特性 lt A 25 C V BIAS 12V V RUN1,2,3 5V EXTV CC 0V Note 2 SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS T PG1 Delay For Reporting a Fault 20 µs OV3 V OV3L OV3 Voltage Low I OV3 = 2mA 0.2 0.4 V I OV3 OV3 Leakage Current V OV3 = 5V ±1 µa V OV OV3 Trip Level V FB With Respect to Set Regulated Voltage 6 10 13 % BOOST3 I BST3 BOOST3 Charge Pump Available Output Current Hysteresis 1.5 % V BOOST3 = 16V; V SW3 = 12V; Forced Continuous Mode 65 µa Note 1: 絶対最大定格に記載された値を超えるストレスはデバイスに永続的損傷を与える可能性がある 長期にわたって絶対最大定格条件に曝すと デバイスの信頼性と寿命に悪影響を与える可能性がある Note 2:LTC3859A は T J が T A にほぼ等しいパルス負荷条件でテストされる LTC3859AE は 0 C~ 85 C の温度範囲で性能仕様に適合することが保証されている 40 C~125 C の動作接合部温度範囲での仕様は 設計 特性評価および統計学的なプロセス コントロールとの相関で確認されている LTC3859AI は 40 C~125 C の動作接合部温度範囲で保証されており LTC3859AH は 40 C~150 C の動作接合部温度範囲で保証されており LTC3859AMP は 55 C~150 C の動作接合部温度範囲でテストされ 保証されている 接合部温度が高いと動作寿命が短くなる 125 C を超える接合部温度では動作寿命はディレーティングされる これらの仕様を満たす最大周囲温度は 基板レイアウト パッケージの定格熱インピーダンスおよび他の環境要因と関連した特定の動作条件によって決まることに注意 T J は周囲温度 T A および電力損失 P D から次式に従って計算される T J=T A+(P D θ JA) ここで QFN パッケージでは θ JA=34 C/W TSSOP パッケージでは θ JA=25 C/W Note 3: このデバイスには短時間の過負荷状態の間デバイスを保護するための過温度保護機能が備わっている この保護がアクティブなとき 最大定格接合部温を超える 規定された絶対最大動作接合部温度を超えた動作が継続すると デバイスの信頼性を損なう またはデバイスを永久的に損傷するおそれがある Note 4 この LTC3859A は帰還ループを使って V ITH1,2,3 を規定電圧にサーボ制御し そのときの V FB 電圧を測定してテストされる 85 C での仕様は製造時にはテストされず 設計 特性評価および他の温度 (LTC3859AE/LTC3859AI では 125 C LTC3859AH/LTC3859AMP では 150 C) での製造時のテストとの相関によって確認されている LTC3859AMP の場合 40 C での仕様は製造時にはテストされず 設計 特性評価および 55 C での製造時のテストとの相関によって確認されている Note 5: スイッチング周波数で供給されるゲート電荷により動的消費電流が増える アプリケーション情報 のセクションを参照 Note 6 立ち上がり時間と立ち下がり時間は 10% と 90% のレベルを使用して測定する 遅延時間は 50% レベルを使って測定する Note 7 最小オン時間の条件は I MAX の 40% 以上のインダクタ ピーク トゥ ピーク リップル電流に対して規定されている ( アプリケーション情報 のセクションの 最小オン時間に関する検討事項 を参照 ) 6
標準的性能特性 EFFICIENCY (%) 100 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 OUTPUT CURRENT (A) FIGURE 12 CIRCUIT V IN = 10V, V OUT = 5V FCM EFFICIENCY PULSE-SKIPPING EFFICIENCY BURST LOSS BURST EFFICIENCY FCM LOSS PULSE-SKIPPING LOSS Burst Mode 10000 1000 100 10 1 0.1 1 10 3859A G01 POWER LOSS (mw) EFFICIENCY (%) 100 90 80 70 60 50 40 30 20 10 0 0.0001 V IN = 10V FIGURE 12 CIRCUIT V OUT = 5V V IN = 20V 0.001 0.01 0.1 1 10 OUTPUT CURRENT (A) 3859A G02 EFFICIENCY (%) 100 99 98 97 96 95 94 93 92 0 FIGURE 12 CIRCUIT V OUT = 5V I LOAD = 4A 5 10 15 20 25 30 35 40 INPUT VOLTAGE (V) 3859A G03 V OUT 100mV/DIV AC-COUPLED V OUT 100mV/DIV AC-COUPLED V OUT 100mV/DIV AC-COUPLED I L 2A//DIV I L 2A//DIV I L 2A//DIV 50µs/DIV V IN = 12V V OUT = 5V FIGURE 12 CIRCUIT 3859A G04 50µs/DIV V IN = 12V V OUT = 5V FIGURE 12 CIRCUIT 3859A G05 50µs/DIV V IN = 12V V OUT = 5V FIGURE 12 CIRCUIT 3859A G06 808 FORCED CONTINUOUS MODE Burst Mode OPERATION 1A/DIV PULSE- SKIPPING MODE 2µs/DIV V IN = 10V V OUT = 5V I LOAD = 1mA FIGURE 12 CIRCUIT 3859A G07 20ms/DIV FIGURE 12 CIRCUIT 3859A G08 V OUT2 2V/DIV V OUT1 2V/DIV REGULATED FEEDBACK VOLTAGE (mv) 806 804 802 800 798 796 794 792 75 50 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G09 7
標準的性能特性 EFFICIENCY (%) 100 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 OUTPUT CURRENT (A) FIGURE 12 CIRCUIT V IN = 5V, V OUT = 10V, V BIAS = V IN FCM EFFICIENCY PULSE-SKIPPING EFFICIENCY BURST LOSS BURST EFFICIENCY FCM LOSS PULSE-SKIPPING LOSS 10000 1000 100 10 1 0.1 1 10 3859A G10 POWER LOSS (mw) EFFICIENCY (%) 100 90 80 70 60 50 40 30 20 10 FIGURE 12 CIRCUIT V BIAS = V IN V OUT = 10V 0 0.0001 V IN = 8V V IN = 5V 0.001 0.01 0.1 1 10 OUTPUT CURRENT (A) 3859A G11 EFFICIENCY (%) 100 99 98 97 96 95 94 93 92 91 90 2 FIGURE 12 CIRCUIT V BIAS = V IN V OUT = 10V I LOAD = 2A 3 4 5 6 7 8 9 10 INPUT VOLTAGE (V) 3859A G12 Burst Mode V OUT 100mV/ DIV AC- COUPLED V OUT 100mV/DIV AC-COUPLED V OUT 100mV/DIV AC-COUPLED I L 5A/DIV I L 5A/DIV I L 5A/DIV 200µs/DIV V OUT = 10V V IN = 5V FIGURE 12 CIRCUIT 3859A G13 200µs/DIV V OUT = 10V V IN = 5V FIGURE 12 CIRCUIT 3859A G14 200µs/DIV V OUT = 10V V IN = 5V FIGURE 12 CIRCUIT 3859A G15 1.212 FORCED CONTINUOUS MODE Burst Mode OPERATION 5A/DIV PULSE- SKIPPING MODE 2µs/DIV V OUT = 10V V IN = 7V I LOAD = 1mA FIGURE 12 CIRCUIT 3859A G16 V OUT3 2V/DIV GND 20ms/DIV V IN = 5V FIGURE 12 CIRCUIT 3859A G17 REGULATED FEEDBACK VOLTAGE (V) 1.209 1.206 1.203 1.200 1.197 1.194 1.191 1.188 75 50 25 0 25 50 75 100 120 150 TEMPERATURE ( C) 3859A G18 8
標準的性能特性 5.5 IINTV CC 5.6 INTV CC EXTV CC EXTV CC INTV CC 6.0 INTV CC VOLTAGE (V) 5.4 5.3 5.2 5.1 5.0 0 5 10 15 20 25 30 35 40 INPUT VOLTAGE (V) 3859A G19 INTV CC VOLTAGE (V) EXTV 5.4 CC = 0V EXTV CC = 8.5V 5.2 5.0 4.8 EXTV CC = 5V 4.6 4.4 4.2 V BIAS = 12V 4.0 0 20 40 60 80 100 LOAD CURRENT (ma) 3859A G20 EXTV CC AND INTV CC VOLTAGE (V) 5.8 5.6 5.4 5.2 5.0 4.8 4.6 4.4 4.2 4.0 75 50 INTV CC EXTV CC RISING EXTV CC FALLING 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G21 SENSE CURRENT (µa) 800 700 600 500 400 300 200 100 0 0 SENSE V SENSE SENSE1, 2 PINS SENSE3 PIN 5 10 15 20 25 30 35 40 V SENSE COMMON MODE VOLTAGE (V) 3859A G22 SENSE CURRENT (µa) 900 800 700 600 500 400 300 200 SENSE V OUT > INTV CC + 0.5V 100 V OUT < INTV CC 0.5V 0 75 50 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G23 SENSE CURRENT (µa) 200 180 160 140 120 100 80 60 40 SENSE V IN = 12V SENSE3 + PIN 20 SENSE3 PIN 0 75 50 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G24 MAXIMUM CURRENT SENSE VOLTAGE (mv) 80 70 60 50 40 30 20 10 0 0 BUCK BOOST 10 20 30 40 50 60 70 80 90 100 DUTY CYCLE (%) 3859A G25 MAXIMUM CURRENT SENSE VOLTAGE (mv) 60 50 40 30 20 10 0 10 20 30 0 I TH 0.2 PULSE-SKIPPING FORCED CONTINUOUS Burst Mode OPERATION 0.4 0.6 0.8 1 1.2 1.4 I TH (V) 3859A G26 TRACK/SS CURRENT (µa) TRACK/SS 1.20 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 75 50 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G27 9
標準的性能特性 SHUTDOWN CURRENT (µa) 22 V BIAS = 12V 20 18 16 14 12 10 SHUTDOWN CURRENT (µa) 25 20 15 10 5 QUIESCENT CURRENT (µa) 100 90 80 70 60 50 V BIAS = 12V ALL CHANNELS ON ONE CHANNEL ON 8 75 50 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G28 0 5 10 15 20 25 30 35 40 V BIAS INPUT VOLTAGE (V) 3859A G29 40 75 50 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G30 MAXIMUM CURRENT SENSE VOLTAGE (mv) 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 0 100 200 300 400 500 600 700 800 FEEDBACK VOLTAGE (mv) 3859A G31 FREQUENCY (khz) 600 550 500 450 400 350 300 75 50 FREQ = INTV CC FREQ = GND 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G32 INTV CC VOLTAGE (V) 4.4 4.3 4.2 4.1 4.0 3.9 3.8 3.7 3.6 3.5 3.4 75 50 RISING FALLING 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G33 RUN PIN VOLTAGE (V) 1.40 1.35 1.30 1.25 1.20 1.15 1.10 1.05 RUN RUN2,3 RISING RUN1 RISING RUN2,3 FALLING RUN1 FALLING 1.00 75 50 25 0 25 50 75 100 125 150 TEMPERATURE ( C) 3859A G34 CHARGE PUMP CHARGING CURRENT (µa) 100 90 80 70 60 50 40 30 20 10 0 100 V BOOST3 = 16V V SW3 = 12V 25 C 55 C 150 C 200 300 400 500 600 700 800 OPERATING FREQUENCY (khz) 3859A G35 CHARGE PUMP CHARGING CURRENT (µa) 0 5 100 V BOOST3 V SW3 = 4V 90 80 70 60 50 40 30 20 10 10 FREQ = 0V FREQ = INTV CC 15 20 25 30 35 40 SWITCH VOLTAGE (V) 3859A G36 10
ピン機能 QFN/TSSOP FREQ 1/ 5 VCO GND VCO 350kHz INTV CC VCO 535kHz FREQ GND 50kHz 900kHz 20μA PLLIN/MODE 2/ 6 TG1 3 LTC3859A Burst Mode 100k Burst Mode INTV CC 1.2V INTV CC 1.3V 100k INTV CC SGND 8/ 12 3 C IN RUN1 RUN2 RUN3 9 10 11/ 13 14 15 RUN1 1.17V RUN2/RUN3 1.20V 0.7V LTC3859A 14μA OV3 17/ 21 OV3 V FB3 110% V FB3 110% INTV CC 22/ 26 4.7μF PGND EXTV CC 23/ 27 INTV CC LDO EXTV CC 4.7V V BIAS LDO LDO INTV CC EXTV CC 14V V BIAS 24/ 28 SGND BG1 BG2 BG3 29 21 25/ 33 25 29 N MOSFET INTV CC BOOST1 BOOST2 BOOST3 30 20 26/ 34 24 30 BOOST SW BOOST INTV CC BOOST INTV CC V IN INTV CC SW1 SW2 SW3 31 19 28/ 35 23 32 TG1 TG2 TG3 32 18 27/ 36 22 31 N MOSFET SW INTV CC PGOOD1 33/ 37 V FB1 10% PGOOD1 11
ピン機能 QFN/TSSOP TRACK/SS1 TRACK/SS2 SS3 34 16 3/ 38 20 7 LTC3859A V FB1 V FB2 0.8V TRACK/SS1 TRACK/SS2 LTC3859A V FB3 1.2V SS1 1µA TRACK/SS LTC3859A I TH1 I TH2 I TH3 35 15 7/ 1 19 11 V FB1 V FB2 V FB3 36 14 6/ 2 18 10 SENSE1 + SENSE2 + SENSE3 + 37 13 4/ 3 17 8 R SENSE I TH SENSE SENSE + SENSE3 + SENSE1 SENSE2 SENSE3 38 12 5/ 4 16 9 SENSE1,2 INTV CC SENSE1,2 PGND 39 N MOSFET C IN PCB 12
+ + + + + LTC3859A 機能ブロック図 DROPOUT DET BOT S Q R Q TOPON SWITCHING LOGIC SHDN + SLEEP ICMP IR + + BOOST TOP TG SW INTV CC BOT BG PGND SENSE + SENSE 3859A BD INTV CC V IN1,2 D B C B D C IN C OUT L R SENSE + FREQ V BIAS EXTV CC 4.7V + PGOOD1 20µA VCO C LP SYNC DET 100k 5.4V 5.4V LDO EN LDO EN SGND 0.88V V FB1 0.72V CLK2 CLK1 PFD INTV CC 6.8V BUCK CHANNELS 1 AND 2 3mV 2.8V 0.65V SLOPE COMP EA OV 6µA CH1 0.5µA CH2 11V SHDN RST 2(V FB ) FOLDBACK SHDN RUN V FB 0.80V TRACK/SS 0.88V I TH 1µA TRACK/SS R B R A C C C C2 RC C SS VOUT1,2 13
+ + + + + + LTC3859A 機能図 OV3 1.32V V FB3 CLK1 PLLIN/MODE BOOST CHANNEL 3 S Q BOTON R Q SHDN SWITCHING LOGIC 0.425V + SLEEP ICMP IR + 2mV + 2.8V 0.7V SLOPE COMP SNSLO 2V EA OV 0.5µA 1µA 11V SHDN SNSLO RUN3 TOP BOT 1.2V SS3 1.32V BOOST3 TG3 SW3 INTVCC BG3 PGND SENSE3 SENSE3 + V FB3 I TH3 SS3 3859A BD INTV CC V OUT3 D B C B C OUT C IN L RSENSE R B R A C C C C2 R C C SS VIN3 14
動作 LTC3859A 2 1 2 180 3 1 RS MOSFET MOSFET ICMP RS ICMP I TH EA V FB V OUT 0.800V 1.2V V FB EA I TH MOSFET MOSFET MOSFET MOSFET IR INTV CC /EXTV CC MOSFET INTV CC EXTV CC 4.7V V BIAS LDO V BIAS INTV CC 5.4V EXTV CC 4.7V V BIAS LDO EXTV CC LDO EXTV CC LDO EXTV CC INTV CC 5.4V EXTV CC LTC3859A 1 INTV CC MOSFET C B L 1 2 MOSFET 10 MOSFET 1/12 C B RUN1 RUN2 RUN3 TRACK/SS1 TRACK/SS2 SS3 LTC3859A 3 RUN1 RUN2 RUN3 RUN1 1.17V RUN2/RUN3 1.20V 3 0.7V INTV CC LDO LTC3859A 14μA RUN 1 RUN1 6μA RUN2 RUN3 0.5μA RUN1 6μA RUN1 1 RUN RUN 8V RUN 11V RUN 100μA RUN V BIAS V OUT TRACK/SS 1 TRACK/SS1 2 TRACK/SS2 3 SS3 TRACK/ 15
動作 SS 0.8V 1.2V LTC3859A V FB TRACK/SS TRACK/SS SGND TRACK/SS 1µA TRACK/SS TRACK/SS 0V 0.8V/1.2V INTV CC V OUT 1 2 TRACK/SS V OUT TRACK/SS Burst Mode PLLIN/MODE LTC3859A Burst Mode Burst Mode PLLIN/MODE PLLIN/MODE INTV CC PLLIN/ MODE 1.2V INTV CC 1.3V DC Burst Mode I TH 25% 30% EA I TH I TH 0.425V H MOSFET I TH EA 0.450V LTC3859A 1 2 LTC3859A 55μA 2 65μA 3 LTC3859A 80μA EA I TH EA L MOSFET Burst Mode IR MOSFET MOSFET I TH Burst Mode PLLIN/MODE LTC3859A PWM 1% ICMP MOSFET Burst Mode RF Burst Mode 16
動作 FREQ PLLIN/ MODE MOSFET LTC3859A FREQ PLLIN/MODE FREQ SGND INTV CC FREQ SGND 350kHz FREQ INTV CC 535kHz FREQ SGND 50kHz 900kHz LTC3859A PLL PLLIN/MODE LTC3859A V CO MOSFET 2 MOSFET 180 VCO FREQ PLL TG1 VCO PLL LTC3859A 55kHz 1MHz 75kHz 850kHz LTC3859A PLL 75kHz 850kHz PLLIN/MODE 1.6V 1.2V V IN > V OUT V OUT V IN V IN V OUT MOSFET BOOST3 TG 2 V IN V OUT 100% 110% I LIM 3% TG3 V IN Burst Mode TG3 V IN TG3 V IN V OUT 110% TG3 Burst Mode 2 MOSFET TG 1 SENSE SENSE3 + 2.5V V BIAS UVLO 12 V BIAS 2.5V SENSE3 + 2.5V SS3 17
動作 2 V FB1,2 0.800V 10% MOSFET MOSFET 1 PGOOD1 1 PGOOD1 N MOSFET V FB1 0.8V 10% MOSFET PGOOD1 L RUN1 L PGOOD1 L V FB1 10% MOSFET 6V OV3 OV3 3 N MOSFET V FB3 1.2V 110% MOSFET OV3 L RUN3 L OV3 L V FB3 1.2V 110% MOSFET 6V 70% V FB TRACK/SS1,2 2 2 2 1 2 RMS EMI 2 LTC3859A 2 180 RMS EMI 18
動作 5V SWITCH 20V/DIV 3.3V SWITCH 20V/DIV INPUT CURRENT 5A/DIV INPUT VOLTAGE 500mV/DIV I IN(MEAS) = 2.53A RMS I IN(MEAS) = 1.55A 3859A F01a RMS 3859A F01b a 1 12V 5V/3A 3.3V/3A 1 a 2 b 2 EMI b 1 LTC3859A 2 1 RMS 2 2.53A RMS 1.55A RMS I RMS 2 2.66 1 RMS RMS EMI EMI 2 V IN V OUT /V IN 3.3V 5V 1 2 RMS 2 2 2 50% 1 LTC3859A R SENSE MOSFET C IN C OUT INPUT RMS CURRENT (A) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 V O1 = 5V/3A V O2 = 3.3V/3A SINGLE PHASE DUAL CONTROLLER 2-PHASE DUAL CONTROLLER 10 20 30 40 INPUT VOLTAGE (V) 3859A F02 2 RMS 19
アプリケーション情報 LTC3859A LTC3859A DCR 2 DCR R SENSE R SENSE MOSFET SENSE + SENSE SENSE + SENSE LTC3859A 4 3 DCR 4b R1 SENSE1 + /SENSE1 SENSE2 + /SENSE2 0V 28V LTC3859A 24V SENSE + 1µA DCR SENSE SENSE INTV CC 0.5V 1μA SENSE IINTV CC 0.5V 700μA INTV CC 0.5V INTV CC 0.5V SENSE3 + /SENSE3 2.5V 38V SENSE3 + Burst Mode 170μA SENSE3 1μA SENSE3 DCR R SENSE 3 3859A F03 4a R SENSE V SENSE MAX 50mV I MAX I L R SENSE = V SENSE(MAX) I MAX + DI L 2 50% 20
アプリケーション情報 INTV CC BOOST TG LTC3859A SW BG SENSE1,2 + (SENSE3 ) SENSE1, 2 (SENSE3 + ) SGND 3859A F04a V IN1,2 (V OUT3 ) R SENSE CAP SENSE V OUT1,2 (V IN3 ) R1 R2 C1 L/DCR DCR R2/ R1 R2 R2 DCR DCR RLC DCR INTV CC BOOST TG LTC3859A SW BG SENSE1, 2 + (SENSE3 ) SENSE1, 2 (SENSE3 + ) SGND 3859A F04b *C1 SENSE 4b DCR DCR 4a C1* R2 R1 4 INDUCTOR V IN1,2 (V OUT3 ) (R1 R2) C1 = L/DCR R SENSE(EQ) = DCR(R2/(R1+R2)) 4b LTC3859 DCR DCR DC 1mΩ DCR L DCR V OUT1,2 (V IN3 ) R (EQUIV) = V SENSE(MAX) I MAX + DI L 2 LTC3859A V SENSE MAX 50mV R SENSE EQUIV DCR 20 C 0.4%/ C T L MAX 100 C DCR R SENSE(EQUIV) R D = DCR MAX att L(MAX) 0.47µF C1 R1 R2 2kΩ SENSE + 1μA R1 R2 DCR L R1 R2 = (DCR at 20 C) C1 R1= R1 R2 R D ; R2 = R1 R D 1 R D 21
アプリケーション情報 R1 P LOSS R1= (V IN(MAX) V OUT ) V OUT R1 R1 V IN 1/2 V OUT P LOSS R1= (V OUT(MAX) V IN ) V IN R1 R1 DCR R1 DCR DCR MOSFET I L V IN I L I L I L 0.3 I MAX I L V IN 1/2 V OUT 2 R SENSE 25% 30% Burst ModeI L Burst Mode Burst Mode L, 1 DI L = (f)(l) V OUT 1 V OUT V IN V OUT I L 1 DI L = (f)(l) V IN 1 V IN V OUT 22
アプリケーション情報 MOSFET LTC3859A 2 MOSFET 1 N MOSFET 1 N MOSFET INTV CC 5.4V EXTV CC MOSFET MOSFET BV DSS MOSFET 30V MOSFET R DS ON C MILLER C MILLER MOSFET C MILLER V DS V DS V DS MOSFET MOSFET = V OUT V IN = V IN V OUT V IN = V OUT V IN V OUT = V IN V OUT MOSFET P MAIN _BUCK = V OUT V IN ( I OUT(MAX) ) 2 ( 1+ δ)r DS(ON) + (V IN ) 2 I OUT(MAX) (R DR )(C MILLER ) 2 1 + V INTVCC V THMIN 1 V THMIN P SYNC _BUCK = V IN V OUT V IN (f) ( P MAIN _BOOST = V OUT V IN) V OUT 2 V IN ( 1+ δ)r DS(ON) + V2 OUT V IN ( R DR )( C MILLER ) P SYNC _BOOST = V IN V OUT ( I OUT(MAX) ) 2 ( 1+ δ)r DS(ON) I OUT(MAX) 2 ( I OUT(MAX) ) 2 1 + V INTVCC V THMIN 1 V THMIN (f) ( I OUT(MAX) ) 2 ( 1+ δ)r DS(ON) δ R DS ON R DR 2Ω MOSFET V THMIN MOSFET I 2 R MOSFET N V IN < 20V V IN MOSFET V IN > 20V V IN C MILLER R DS ON MOSFET 100% 23
アプリケーション情報 MOSFET 100% MOSFET 1 z R DS ON MOSFET z 0.005/ C 13 D4 D5 D6 2 MOSFET MOSFET V IN 3% 1A 3A C IN C OUT C IN C IN DC C OUT ESR ( ) Ripple = I OUT(MAX) V OUT V IN(MIN) V C OUT V OUT f C OUT ESR DV ESR = I L(MAX) ESR ESR RMS ESR OS-CON POSCAP ESR C IN C OUT 2 / / RMS 2 C IN RMS RMS V OUT I OUT 1 RMS 1 RMS 30% 70% 24
アプリケーション情報 MOSFET V OUT /V IN 1 RMS ESR RMS C IN I RMS I MAX V IN ( V OUT ) V IN V OUT ( ) 1/2 V IN 2V OUT I RMS I OUT /2 2000 LTC3859A C IN (1) 0.1μF 1μF LTC3859A V IN C IN C1 V IN 1Ω 10Ω 2 C OUT ESR ESR V OUT DV OUT DI L ESR + 1 8fC OUT f C OUT I L I L LTC3859A 5 LTC3859A 2 1 ESR RMS ESR RMS / MOSFET 1cm C IN C IN V IN V OUT, BUCK = 0.8V 1+ R B R A V OUT, BOOST = 1.2V 1+ R B R A C FF V FB SW 1/3 LTC3859A V FB 3859A F05 V OUT R B R A C FF 5 25
アプリケーション情報 TRACK/SS1 TRACK/SS2 SS3 V OUT TRACK/SS 1 TRACK/SS1 2 TRACK/SS2 3 SS3 TRACK/SS 0.8V 1.2V LTC3859A V FB TRACK/SS TRACK/SS V OUT 6 TRACK/SS 1μA TRACK/SS LTC3859A V FB V OUT TRACK/SS V OUT 0V OUTPUT (V OUT ) 1/3 LTC3859A TRACK/SS C SS SGND 3859A F06 6 TRACK/SS TIME 7a V X(MASTER) V OUT(SLAVE) V X(MASTER) 3859A F07a t SS _BUCK = C SS 0.8V 1µA t SS _BOOST = C SS 1.2V 1µA OUTPUT (V OUT ) V OUT(SLAVE) 7a 7b 2 TRACK/SS1 TRACK/SS2 2 8 V X V OUT TRACK/SS V OUT V X V X V OUT = R A R TRACKA R TRACKA +R TRACKB R A +R B V OUT V X R A = R TRACKA R B = R TRACKB TIME 3859A F07b 7b 7 2 V OUT R LTC3859A B V FB1,2 R V A X R TRACKB TRACK/SS1,2 R TRACKA 3859A F08 8 TRACK/SS 26
アプリケーション情報 INTV CC LTC3859A 2 P LDO EXTV CC V BIAS EXTV CC INTV CC INTV CC LTC3859A V BIAS LDO EXTV CC LDO INTV CC 5.4V 4.7μF 1μF INTV CC PGND MOSFET MOSFET LTC3859A INTV CC V BIAS LDO EXTV CC LDO EXTV CC 4.7V V BIAS LDO V BIAS I INTVCC Note 2 QFN LTC3859A INTV CC EXTV CC 40V 70 C 40mA T J = 70 C + (40mA)(40V)(34 C/W) = 125 C V IN PLLIN/MODE INTV CC EXTV CC 4.7V V BIAS LDO EXTV CC LDO EXTV CC 4.5V EXTV CC LDO EXTV CC LDO INTV CC 5.4V EXTV CC 5.4V LDO INTV CC EXTVCC EXTV CC 5.4V 14V INTV CC 5.4V EXTV CC LDO MOSFET LTC3859A 1 4.7V V OUT 14V V BIAS LDO EXTV CC LDO EXTV CC INTV CC 6V EXTV CC EXTV CC V BIAS V IN / INTV CC 5V 14V EXTV CC V OUT EXTV CC 8.5V 125 C T J = 70 C + (40mA)(8.5V)(34 C/W) = 82 C 3.3V INTV CC 27
アプリケーション情報 EXTV CC 4 1. EXTV CC 5.4V INTV CC 10% 2. EXTV CC 1 5V 14V 3. EXTV CC 5V 14V MOSFET EXTV CC EXTV CC < V IN 4. 1 EXTV CC 3.3V 4.7V EXTV CC 9 EXTV CC < V IN V IN1,2 LTC3859A C1 BAT85 BAT85 MTOP BAT85 TG EXTV CC SW MBOT L R SENSE V OUT1,2 BG PGND 3859A F09 9 EXTV CC 28
アプリケーション情報 MOSFET C B D B BOOST C B MOSFET SW L C B INTV CC D B MOSFET 1 MOSFET C B MOSFET SW V IN V OUT BOOST MOSFET V BOOST V IN V INTVCC V BOOST V OUT V INTVCC C B MOSFET 100 V IN MAX V OUT MAX D B MOSFET BOOST3 MOSFET / MOSFET C B BOOST3 INTV CC INTV CC INTV CC INTV CC Burst Mode INTV CC INTV CC INTV CC D B INTV CC 5.4V V OUT INTV CC 1000 900 800 FREQUENCY (khz) 700 600 500 400 300 200 100 0 15 25 35 45 55 65 75 85 95 105 115 125 FREQ PIN RESISTOR (kω) 3859A F10 10 FREQ 29
アプリケーション情報 LTC3859A 70% 100% 40% MOSFET LTC3859A t ON MIN 95ns DI L(SC) = t ON(MIN) (V IN /L) I SC = 40% I LIM(MAX) 1 2 DI L(SC) 1 MOSFET 10% MOSFET MOSFET MOSFET V OUT MOSFET MOSFET INTV CC LTC3859A 170 C INTV CC LDO INTV CC LTC3859A 155 C INTV CC LDO T J > 125 C LTC3859A VCO PLL 1 MOSFET PLLIN/MODE 2 MOSFET 180 f OSC VCO f OSC VCO 30
アプリケーション情報 VCO CLP VCO LTC3859A LTC3859A VCO 50kHz 1MHz 75kHz 850kHz PLLIN/MODE H 1.6V L 1.2V FREQ VCO FREQ PLL PLL FREQ 1 1 FREQ PLLIN/MODE 0V DC 電圧 350kHz INTV CC DC 電圧 535kHz SGNDへの抵抗 DC 電圧 50kHz~900kHz 上のどれか 外部クロック 外部クロックにフェーズロック t ON MIN LTC3859 MOSFET MOSFET MOSFET t ON(MIN)_BUCK < V OUT V IN (f) t ON(MIN)_BOOST < V OUT V IN V OUT (f) LTC3859A 95ns 120ns 130ns 31
アプリケーション情報 100% % 効率 = 100% (L1 + L2 + L3 +...) L1 L2 LTC3859A 4 1 V IN 2 INTV CC 3 I 2 R 4 MOSFET 1. V IN DC MOSFET V IN 0.1% 2. INTV CC MOSFET MOSFET MOSFET MOSFET L H L INTV CC dq dq/dt INTV CC I GATECHG f Q T Q B Q T Q B MOSFET MOSFET EXTV CC INTV CC V IN / 20V 5V 10mA INTV CC 2.5mA V IN 10% V IN 3. I 2 R MOSFET ESR DC L R SENSE MOSFET MOSFET 2 MOSFET R DS ON MOSFET L R SENSE ESR I 2 R R DS ON 30mΩ R L 50mΩ R SENSE 10mΩ R ESR 40mΩ 130mΩ 5V 1A 5A 3% 13% 3.3V 4% 20% V OUT 2 2 4 4. MOSFET MOFET 15V 遷移損失 = (1.7)V IN 2 I O(MAX) C RSS f 5% 10% C IN ESR 25W ESR 20mΩ 50mΩ 20μF 40μF LTC3859A 2 2% 32
アプリケーション情報 DC V OUT I LOAD ESR ESR C OUT I LOAD C OUT V OUT V OUT OPTI-LOOP ESR I TH DC AC DC 2 16 I TH I TH RC-CC 0.5 2 1μs 10μs 20% 80% I TH MOSFET I TH RC CC CC RC >1µF C OUT V OUT C LOAD C OUT 1:50 25 C LOAD 10µF 250µs 200mA 33
アプリケーション情報 1 V IN 12V V IN 22V V OUT 3.3V I MAX 6A V SENSE MAX 50mV f 350kHz 30% FREQ GND 350kHz 30% DI L = V OUT (f)(l) 1 V OUT V IN(NOMINAL) 3.9μH 29% DC 6.88A 95ns V IN t ON(MIN) = V OUT V IN(MAX) (f) = 3.3V 22V(350kHz) = 429ns R SENSE 43mV R SENSE 43mV 6.88A = 0.006Ω 1% R A 25k R B 80.6k 3.33V MOSFET Fairchild FDS6982S MOSFET R DS ON 0.035Ω/0.022Ω C MILLER 215pF T 50 C { } P MAIN = 3.3V 22V (6A)2 1+(0.005)(50 C 25 C) (0.035Ω)+(22V) 2 6 5A 2 (2.5Ω)(215pF) 1 5V 2.3V + 1 (350kHz) = 433mW 2.3V 20 mv I SC = 0.006Ω 1 2 95ns(22V) 3.9µH = 3.07A R DS ON z 0.005/ C 25 C 0.125 MOSFET P SYNC = (2.23A) 2 (1.125)(0.022Ω) = 233mW C IN 3A RMS ESR 0.02Ω C OUT ESR V ORIPPLE = R ESR (DI L ) = 0.02Ω(1.75A) = 35mV P-P 34
アプリケーション情報 PC PC 11 2 12 1. N MOSFET MTOP1 MTOP2 1cm C IN 2 2. 1 C INTVCC 1 C OUT N MOSFET C IN PC 3. LTC3859A V FB C OUT C OUT 4. SENSE + SENSE SENSE + SENSE 4 5. INTV CC INTV CC MOSFET 1μF 1 INTV CC PGND 6. SW1 SW2 TG1 TG2 BOOST1 BOOST2 LTC3859A 7. INTV CC SGND 35
アプリケーション情報 PC 1 DC-50MHz SW Burst Mode 25% PCB PCB MOSFET 50% V IN V IN BOOST SW TG BG C IN MOSFET SGND 36
アプリケーション情報 SW1 L1 R SENSE1 VOUT1 D1 C OUT1 R L1 V IN R IN C IN SW2 L2 R SENSE2 VOUT2 D2 C OUT2 R L2 3859A F11 11 37
標準的応用例 V OUT1 R A1 68.1k C ITH1 1500pF C ITH1A 100pF OPT R ITH1 15k R B1 357k C SS1 V FB1 I TH1 TRACK/SS1 FREQ PLLIN/MODE LTC3859A SENSE1 SENSE1 + PGOOD1 TG1 SW1 BOOST1 BG1 C1 1nF 100k C B1 MTOP1 MBOT1 C1 10µF L1 4.9µH R SENSE1 6mΩ V OUT1 5V 5A C OUT1 220µF SGND D1 RUN1 V BIAS V OUT2 RUN2 C BIAS 10µF R A2 68.1k 10pF R B2 649k RUN3 V FB2 PGND C ITH2 2.2nF C ITH2A 68pF R ITH2 15k I TH2 INTV CC D2 C INT1 4.7µF C2 10µF C SS2 V OUT3 R A3 68.1k C SS3 C ITH3 0.01µF OPT C ITH3A 820pF R ITH3 3.6k MTOP1, MTOP2: BSZ097NO4LS MBOT1, MBOT2: BSZ097NO4LS MTOP3: BSC027NO4LS MBOT3: BSCO1BN04LS L1: WÜRTH 744314490 L2: WÜRTH 744314650 L3: WÜRTH 744325120 C OUT1 : SANYO 6TPB220ML C OUT2 : SANYO 10TPC68M C IN, C OUT3 : SANYO 50CE220LX D1, D2: CMDH-4E D3: BAS140W R B3 499k V OUT1 TRACK/SS2 V FB3 I TH3 SS3 OV3 EXTV CC TG2 BOOST2 SW2 BG2 SENSE2 + SENSE2 TG3 SW3 BOOST3 BG3 SENSE3 SENSE3 + 3859A F12 D3 C B3 C3 1nF C B2 C2 1nF MTOP3 MBOT3 L3 1.2µH MTOP2 MBOT2 R SENSE2 2mΩ L2 6.5µH R SENSE2 8mΩ C IN 220µF V OUT2 8.5V 3A C OUT2 68µF V IN 2.5V 38V 5V *V out3 V IN < 10V 10V V IN > 10V V IN V OUT3 10V* C OUT3 220µF 12 5V/8.5V 38
標準的応用例 V OUT1 R A1 34k C ITH1 680pF C ITH1A 100pF 33pF R ITH1 10k R B1 475k C SS1 V FB1 I TH1 TRACK/SS1 FREQ PLLIN/MODE LTC3859A SENSE1 SENSE1 + PGOOD1 TG1 SW1 BOOST1 BG1 C1 1nF 100k C B1 MTOP1 MBOT1 C1 10µF L1 8.8µH R SENSE1 9mΩ V OUT1 12V 3A C OUT1 47µF SGND D1 RUN1 V BIAS V OUT2 RUN2 C BIAS 10µF R A2 68.1k C SS2 V OUT3 C ITH2 820pF R A3 68.1k C ITH3 0.01µF C SS3 15pF C ITH2A 150pF OPT C ITH3A 820pF R ITH2 15k R ITH3 3.6k INTV CC R B2 215k R B3 787k MTOP1, MTOP2: VISHAY Si7848DP MBOT1, MBOT2: VISHAY Si7848DP MTOP3: BSC027NO4LS MBOT3: BSCO1BN04LS L1: SUMIDA CDEP105-8R8M L2: SUMIDA CDEP105-3R2M L3: WÜRTH 744325120 C OUT1 : KEMET T525D476MO16E035 C OUT2 : SANYO 4TPE150M C IN, C OUT3 : SANYO 50CE220LX D1, D2: CMDH-4E D3: BAS140W 100k RUN3 V FB2 I TH2 TRACK/SS2 V FB3 I TH3 SS3 OV3 EXTV CC PGND INTV CC TG2 BOOST2 SW2 BG2 SENSE2 + SENSE2 TG3 SW3 BOOST3 BG3 SENSE3 SENSE3 + 3859A F13 D2 D3 C B3 C3 1nF C INT1 4.7µF C B2 C2 1nF MTOP3 MBOT3 L3 1.2µH MTOP2 MBOT2 C2 10µF R SENSE2 2mΩ L2 3.2µH R SENSE2 6mΩ V OUT2 3.3V 5A C OUT2 150µF V IN 2.5V 38V 5V C IN 220µF *V out3 V IN < 15V 15V V IN > 15V V IN V OUT3 15V* C OUT3 220µF 13 12V/3.3V 39
標準的応用例 V OUT1 R A1 115k C ITH1 1000pF 56pF C ITH1A 200pF C SS1 0.01µF R ITH1 3.93k R B1 28.7k V FB1 I TH1 TRACK/SS1 FREQ PLLIN/MODE SGND LTC3859A SENSE1 SENSE1 + PGOOD1 TG1 SW1 BOOST1 BG1 C1 1nF 100k D1 C B1 MTOP1 MBOT1 C1 10µF L1 0.47µH R SENSE1 3.5mΩ V OUT1 1V 8A C OUT1 220µF 2 RUN1 V BIAS V OUT2 RUN2 C BIAS 10µF R A2 115k 56pF R B2 57.6k RUN3 V FB2 PGND C ITH2 1000pF C ITH2A 200pF R ITH2 3.93k I TH2 INTV CC D2 C INT1 4.7µF C2 10µF C SS2 0.01µF V OUT3 R A3 12.1k OPT R B3 232k TRACK/SS2 V FB3 TG2 BOOST2 SW2 BG2 C B2 MTOP2 MBOT2 L2 0.47µH R SENSE2 3.5mΩ C OUT2 220µF 2 V OUT2 1.2V 8A C SS3 0.01µF C ITH3 15nF C ITH3A 220pF R ITH3 8.66k MTOP1, MTOP2: RENESAS RJK0305 MBOT1, MBOT2: RENESAS RJK0328 MTOP3, MBOT3: RENESAS HAT2169H L1, L2: SUMIDA CDEP105-0R4 L3: PULSE PA1494.362NL C OUT1, C OUT2 : SANYO 2R5TPE220M C IN, C OUT3 : SANYO 50CE220AX D1, D2: CMDH-4E D3: BAS140W I TH3 SS3 OV3 EXTV CC SENSE2 + SENSE2 TG3 SW3 BOOST3 BG3 SENSE3 SENSE3 + 3859A F14 D3 C B3 C3 1nF C2 1nF MTOP3 MBOT3 L3 3.3µH R SENSE2 4mΩ C OUT3 220µF V OUT3 24V 5A V IN 12V C IN 220µF 14 12V V IN 24V/1V/1.2V 40
標準的応用例 V OUT1 R A1 115k C ITH1 2.2nF C ITH1A 100pF C SS1 R ITH1 5.6k R B1 57.6k V FB1 I TH1 TRACK/SS1 FREQ PLLIN/MODE LTC3859A SENSE1 SENSE1 + PGOOD1 TG1 SW1 BOOST1 BG1 C1 1nF 100k C B1 MTOP1 MBOT1 C1 10µF L1 2.2µH R SENSE1 9mΩ V OUT1 1.2V 3A C OUT1 220µF SGND D1 RUN1 V BIAS V OUT2 RUN2 C BIAS 10µF R A2 115k R B2 357k RUN3 V FB2 PGND C ITH2 3.3nF C ITH2A 100pF R ITH2 9.1k I TH2 INTV CC D2 C INT1 4.7µF C2 10µF C SS2 V OUT3 R A3 115k C SS3 C ITH3 100nF C ITH3A 10pF R ITH3 13k R B3 887k MTOP1, MTOP2: BSZ097NO4LS MBOT1, MBOT2: BSZ097NO4LS MBOT3: BSZ097NO4L L1: WURTH 744311220 L2: WURTH 744314650 L3: COOPER BUSSMANN DRQ125-100 C OUT1 : SANYO 2R5TPE220MAFB C OUT2 : SANYO 4TPE220MAZB C OUT3 : SANYO SVPC270M C IN : SANYO 50CE220LX D1, D2: CMDH-4E D3: DIODES INC B360A-13-F TRACK/SS2 V FB3 I TH3 SS3 OV3 EXTV CC TG2 BOOST2 SW2 BG2 SENSE2 + SENSE2 TG3 SW3 BOOST3 BG3 SENSE3 SENSE3 + 3859A F15 C3 1nF C B2 C2 1nF C3 10µF 50V MBOT3 MTOP2 MBOT2 L3 10µH L2 6.5µH D3 R SENSE2 9mΩ R SENSE2 9mΩ C OUT3 270µF C OUT2 220µF V OUT2 3.3V 3A V OUT3 10.5V 1.2A V IN 5.8V TO 34V C IN 220µF 15 1.2V/3.3V 10.5V SEPIC 41
パッケージ FE 38 TSSOP 4.4mm (Reference LTC DWG # 05-08-1772 Rev C) AA 4.75 REF 38 9.60 9.80* (.378.386) 4.75 (.187) REF 20 6.60 ±0.10 4.50 REF SEE NOTE 4 2.74 REF 0.315 ±0.05 1.05 ±0.10 6.40 2.74 REF (.252) (.108) BSC 0.50 BSC 田パッド レイアウト 4.30 4.50* (.169.177) 0.25 REF 0 8 1 19 1.20 (.047) MAX 0.09 0.20 (.0035.0079) NOTE: 1. 標 : リ ートル 2. は リ ートル ( インチ ) 3. は とは なる 0.50 0.75 (.020.030) 0.50 (.0196) BSC 4. 出パッド接 のための 最小 PCB タルサイズ * には ールドのバリを含まない ールドのバリは サイドで 0.150mm(0.006 ) を超えないこと 0.17 0.27 (.0067.0106) TYP 0.05 0.15 (.002.006) FE38 (AA) TSSOP REV C 0910 42
パッケージ UHF 38 QFN 5mm 7mm (Reference LTC DWG # 05-08-1701 Rev C) 0.70 ± 0.05 5.50 ± 0.05 5.15 ± 0.05 4.10 ± 0.05 3.00 REF 3.15 ± 0.05 パッケージの外 0.25 ± 0.05 0.50 BSC 5.5 REF 6.10 ± 0.05 7.50 ± 0.05 田パッド レイアウト 田 けされない には 田マスクを使用する 5.00 ± 0.10 0.75 ± 0.05 0.00 0.05 3.00 REF 37 38 ピン 1 のノッチ R = 0.30( 標 ) または 0.35 45 の り PIN 1 TOP MARK (SEE NOTE 6) 0.40 ±0.10 1 2 7.00 ± 0.10 5.50 REF 5.15 ± 0.10 3.15 ± 0.10 0.200 REF 0.25 ± 0.05 0.50 BSC 出パッドの R = 0.125 TYP (UH) QFN REF C 1107 R = 0.10 TYP NOTE: 1. は JEDEC のパッケージ外 MO-220 の バリ ーション WHKD に適合 2. は とは なる 3. 全ての は リ ートル 4. パッケージ の 出パッドの には ールドのバリを含まない ールドのバリは ( しあれ ) サイドで 0.20mm を超えないこと 5. 出パッドは 田 ッキとする 6. けの部分はパッケージのトップとボトムのピン 1 の の 参 に過 ない 43
標準的応用例 3.3V/8.5V V OUT1 R A1 68.1k C ITH1 820pF C ITH1A 150pF 15pF R ITH1 15k R B1 215k C SS1 V FB1 I TH1 TRACK/SS1 LTC3859A SENSE1 SENSE1 + PGOOD1 TG1 SW1 FREQ BOOST1 PLLIN/MODE BG1 C1 1nF 100k C B1 MTOP1 MBOT1 C1 10µF L1 3.2µH R SENSE1 6mΩ V OUT1 3.3V 5A C OUT1 150µF SGND D1 RUN1 V BIAS V OUT2 RUN2 C BIAS 10µF R A2 68.1k 10pF R B2 649k RUN3 V FB2 PGND C ITH2 2.2nF C ITH2A 68pF R ITH2 15k I TH2 INTV CC D2 C INT1 4.7µF C2 10µF C SS2 V OUT3 R A3 68.1k C SS3 C ITH3 0.01µF OPT C ITH3A 820pF MTOP1, MTOP2: VISHAY Si7848DP MBOT1, MBOT2: BSZ097NO4LS MTOP3: BSC027NO4LS MBOT3: BSCO1BN04LS L1: SUMIDA CDEP105-3R2M L2: WÜRTH 744314650 L3: WÜRTH 744325120 C OUT1 : SANYO 6TPB220ML C OUT2 : SANYO 4TPE150M C IN, C OUT3 : SANYO 50CE220LX D1, D2: CMDH-4E D3: BAS140W R ITH3 3.6k R B3 499k V OUT2 TRACK/SS2 V FB3 I TH3 SS3 OV3 EXTV CC TG2 BOOST2 SW2 BG2 SENSE2 + SENSE2 TG3 SW3 BOOST3 BG3 SENSE3 SENSE3 + 3859A TA02 D3 C B3 C3 1nF C B2 C2 1nF MTOP3 MBOT3 L3 1.2µH MTOP2 MBOT2 R SENSE2 2mΩ L2 6.5µH R SENSE2 8mΩ C IN 220µF V OUT2 8.5V 3A C OUT2 68µF V IN 2.5V TO 38V (START-UP ABOVE 5V) * V OUT3 IS 10V WHEN V IN < 10V, FOLLOWS V IN WHEN V IN > 10V V OUT3 10V* C OUT3 220µF 関連製品 LTC3857/LTC3857-1 LTC3858/LTC3858-1 LTC3890/LTC3890-1 99% 2 DC/DC 60V 2 DC/DC 50kHz 900kHz 4V V IN 38V 0.8V V OUT 24V I Q 50µA/170µA 50kHz 900kHz 4V V IN 60V 0.8V V OUT 24V I Q 50µA LTC3789 4 4V V IN 38V 0.8V V OUT 38V SSOP-28 4mm 5mm QFN-28 LTC3834/LTC3834-1 LTC3835/LTC3835-1 LTC3891 LTC3824 99% DC/DC 60V 99% DC/DC 100% DC/DC 140kHz 650kHz 4V V IN 36V 0.8V V OUT 10V I Q 30µA/80µA PLL 50kHz 900kHz 4V V IN 60V 0.8V V OUT 24V TSSOP-20E, 3mm 4mm QFN-20 200kHz 600kHz 4V V IN 60V 0.8V V OUT V IN I Q 40µA MSOP-10E 44 102-0094 東京都千代田区紀尾井町 3-6 紀尾井町パークビル 8F TEL 03-5226-7291 FAX 03-5226-0268 www.linear-tech.co.jp LT 0811 PRINTED IN JAPAN LINEAR TECHNOLOGY CORPORATION 2011