µ µ µ µ µ µ µ 1.5V CELL C1 SHUTDOWN L1 1µH D1 1k 68pF R2 6k 1% C1: MURATA-ERIE GRM235Y5V15Z1 MARCON THCS5E1E15Z TOKIN 1E15ZY5U-C13-F C2: MURATA-ERIE GRM235Y5V16Z1 MARCON THCS5E1E15Z TOKIN 1E16ZY5U-C3-F 3.3V LBI 75mA R1 SHDN LBO 1.2M 1% V C D1: MOTOROLA MBR52L C2 1µF L1: COILCRAFT D168C-13 SUMIDA CD3-1 MURATA ERIE LQH3C1 FOR 5PUT: R1 = 1M, R2 = 329k EFFICIENCY (%) 9 8 = 1.5V = 1V 7 = 1.25V 6 137 F1 5.1 1 1 1 LOAD CURRENT (ma) 137 TA1-156
SHDN V C SHDN 1 2 3 TOP VIEW 8 LBO 7 LBI 6 5 MS8 PACKAGE 8-LEAD PLASTIC MSOP T JMAX = 125 C, θ JA = 16 C/W ORDER PART NUMBER CMS8 BCMS8 MS8 PART MARKING BU BF V C 1 2 SHDN 3 N8 PACKAGE 8-LEAD PDIP TOP VIEW 8 7 6 5 LBO LBI S8 PACKAGE 8-LEAD PLASTIC SO T JMAX = 125 C, θ JA = 1 C/W (N8) T JMAX = 125 C, θ JA = 12 C/W (S8) ORDER PART NUMBER CN8 CS8 IS8 BCS8 BIS8 S8 PART MARKING 137 137B 137I 137BI SHDN SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I Q Quiescent Current Not Switching () 5 9 µa Not Switching (B) 1. 1.5 ma V SHDN = V 1 3 µa V Feedback Voltage 1.2 1.22 1.2 V I B Pin Bias Current (Note 2) V = V REF 27 6 na Reference Line Regulation 1V 2V (25 C, C).6 1.1 %/V 1V 2V (7 C) 1.5 %/V 2V 5V.3.8 %/V Minimum Input Voltage.92 1 V Input Voltage Range 1 5 V g m Error Amp Transconductance I = 5µA 25 35 65 µmhos A V Error Amp Voltage Gain 25 C, C 35 1 V/V 7 C 3 V/V f OSC Switching Frequency 55 6 75 khz -157
SHDN SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Maximum Duty Cycle 25 C, C 8 8 % 7 C 76 % Switch Current Limit (Note 3) DC = %.6 1.25 A DC = 75%.5 A Switch V CESAT I = 5mA (25 C, C) 295 35 mv I = 5mA (7 C) mv Burst Mode Operation Switch Current Limit L = 1µH 1 ma ( Only) L = 22µH 5 ma Shutdown Pin Current V SHDN = 2.5. µa V SHDN = V 1.5 2.5 µa LBI Threshold Voltage 19 2 21 mv LBO Output Low I SINK = 1µA.1.25 V LBO Leakage Current V LBI = 25mV, V LBO = 5V.1.1 µa LBI Input Bias Current (Note ) V LBI = 15mV 5 25 na Low-Battery Detector Gain 1MΩ Load (25 C, C) 1 3 V/V 1MΩ Load (7 C) 5 V/V Switch Leakage Current V = 5V.1 3 µa Reverse Battery Current (Note 5) 75 ma SHDN SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I Q Quiescent Current V = 1.3V, Not Switching () 5 1 µa V = 1.3V, Not Switching (B) 1.1 1.6 ma V SHDN = V 1 3 µa V Feedback Voltage 1.195 1.22 1.25 V g m Error Amp Transconductance I = 5µA 25 35 65 µmhos A V Error Amp Voltage Gain 35 1 V/V f OSC Switching Frequency 5 6 75 khz Maximum Duty Cycle 8 8 % Switch V CESAT I = 5mA, = 1.2V 25 35 mv Shutdown Pin Current V SHDN = 2.5. µa V SHDN = V 1.5 2.5 µa LBI Threshold Voltage 186 2 21 mv -158
SHDN SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS I Q Quiescent Current V = 1.3V, Not Switching () 5 1 µa V = 1.3V, Not Switching (B) 1 1.8 ma V SHDN = V 1 3 µa V Feedback Voltage 1.195 1.22 1.25 V I B Pin Bias Current (Note 2) V = V REF 1 27 1 na Reference Line Regulation 1V 2V ( C).6 1.1 %/V 1V 2V (85 C) 3.2 %/V 2V 5V.3.8 %/V Minimum Input Voltage C 1.1 1.2 V 85 C.8 1. V Input Voltage Range 5 V g m Error Amp Transconductance I = 5µA 25 35 65 µmhos A V Error Amp Voltage Gain C 35 V/V 85 C 3 V/V f OSC Switching Frequency 5 6 75 khz Maximum Duty Cycle C 8 8 % 85 C 75 8 % Switch Current Limit (Note 3) DC = %.6 1.25 A DC = 75%.5 A Switch V CESAT I = 5mA, = 1.2V ( C) 25 35 mv I = 5mA (85 C) 33 mv Burst Mode Operation Switch Current Limit L = 1µH 1 ma ( Only) L = 22µH 5 ma Shutdown Pin Current V SHDN = 2.5. µa V SHDN = V 1.5 2.5 µa LBI Threshold Voltage 186 2 21 mv LBO Output Low I SINK = 1µA.1.25 V LBO Leakage Current V LBI = 25mV, V LBO = 5V.1.3 µa LBI Input Bias Current (Note ) V LBI = 15mV 5 3 na Low-Battery Detector Gain 1MΩ Load ( C) 1 6 V/V 1MΩ Load (85 C) V/V Switch Leakage Current V = 5V.1 3 µa -159
9 9 8 9 8 = 1.5V EFFICIENCY (%) 8 7 6 = 1.V = 1.25V = 1.5V EFFICIENCY (%) 7 6 5 3 = 1V = 1.5V = 1.25V EFFICIENCY (%) 7 6 5 3 = 1V = 1.25V 2 2 5.1 1 1 1 2 LOAD CURRENT (ma) 1.1 1 1 LOAD CURRENT (ma) 1 1.1 1 1 LOAD CURRENT (ma) 1 G1 137 G2 TPC3 QUIESCENT CURRENT (µa) 8 5 16 = 1.1V 7 1 6 5 3 2 1 FEEDBACK BIAS CURRENT (na) 3 2 1 LBI BIAS CURRENT (na) 12 1 8 6 2 5 25 25 5 75 TEMPERATURE ( C) 1 5 25 25 5 TEMPERATURE ( C) 75 1 5 25 25 5 75 TEMPERATURE ( C) 1 TPC LTC137 TPC5 TPC6 1 1 5 T A = 25 C QUIESCENT CURRENT (µa) 8 6 2 SHUTDOWN PIN CURRENT (µa) 16 12 8 V CESAT (mv) 3 2 1 1 2 3 5 INPUT VOLTAGE (V) 1 2 3 5 INPUT VOLTAGE (V) 1 2 3 ITCH CURRENT (ma) 5 6 TPC7 TPC8 TPC9-16
FEEDBACK VOLTAGE (V) 1.23 1.225 1.22 1.215 1.21 1.25 1.2 5 25 25 5 75 1 TEMPERATURE ( C) REFERENCE VOLTAGE (mv) 21 28 26 2 22 2 198 196 19 192 19 5 25 25 5 75 1 TEMPERATURE ( C) FREQUENCY (khz) 9 8 25 C 85 C 7 C 6 5 1 2 3 INPUT VOLTAGE (V) 5 TPC1 TPC11 TPC12 2mV/DIV 2mA/DIV OAD 55mA 5mA 2mV/DIV 2mA/DIV OAD 55mA 5mA 5mV/DIV DC COUPLED OFFSET ADDED = 1.25V 5µs/DIV 137 G13 = 3.3V = 1.25V 5µs/DIV 137 G1 = 3.3V =.92V OAD 1mA/DIV 137 G15 = 3.3V 5mV/DIV DC COUPLED OFFSET ADDED 5mV/DIV DC COUPLED OFFSET ADDED 5mV/DIV DC COUPLED OFFSET ADDED = 1V OAD 2mA/DIV 137 G16 = 3.3V = 1.15V OAD 2mA/DIV 137 G17 = 3.3V = 1V OAD 1mA/DIV 137 G18 = 5V µ µ 5mV/DIV DC COUPLED OFFSET ADDED 5mV/DIV V 5V/DIV 1mA/DIV 5mV/DIV V 5V/DIV 1mA/DIV = 1.15V OAD 1mA/DIV 137 G19 = 5V = 1.25V 1µs/DIV 137 G2 = 5V OAD = 1.5mA = 1.25V 1µs/DIV 137 G21 = 5V OAD = 1.5mA -161
/B SHDN SHDN µ µ 6 R1 (EXTERNAL) R2 (EXTERNAL) 2 R5 k Q1 R6 k Q2 1 R3 3k g m ERROR AMPLIFIER BIAS V C 1 * A1 ENABLE 2mV LBI 7 SHDN SHUTDOWN 3 LBO 8 A R 1k RAMP GENERATOR Σ COMPARATOR A2 R FF S Q DRIVER 5 Q3 6kHz OSCILLATOR A = 3.15Ω *HYSTERESIS IN ONLY 137 F2-162
µ µ SHDN SHDN V TRACE A OUT 5mV/DIV B V TRACE B OUT 5mV/DIV 1mA 1mA = 1.25V 1ms/DIV 137 F3 = 5V V TRACE A OUT 2mV/DIV B V TRACE B OUT 2mV/DIV 5mA 5mA = 1.5V 5µs/DIV 137 F = 5V -163
µ 1mV/DIV 2mA/DIV 1mA 5mA = 1.25V 1ms/DIV 137 F5 = 3.3V µ µ µ µ µ OUTPUT NOISE VOLTAGE (dbmvrms) 3 2 1 1 2 3 5 6 1 RBW = 1Hz 1 1 1 FREQUENCY (khz) 137 F6 OUTPUT NOISE VOLTAGE (dbmv RMS ) 2 25 3 35 5 5 55 6 65 7 255 RBW = 1Hz 55 FREQUENCY (khz) 655 137 F7 µ -16
µ OUTPUT VOLTAGE NOISE (dbmv RMS ) OUTPUT NOISE VOLTAGE (dbmvrms) 1 2 3 5 6 7 8 9 1 255 1 2 3 5 6 7 8 9 1 25 RBW = 1Hz 55 FREQUENCY (khz) 137 F8 55 75 FREQUENCY (khz) F9 µ 655 1.25V * R C 1µH SHDN V C MBR52L 1M 59k 33Ω 1µF* 66Ω 5Ω 137 F1-165
2mV/DIV 2mV/DIV 51mA 1mA 5ms/DIV 137 F11a 51mA 1mA 5ms/DIV 137 F11b 2mV/DIV 2mV/DIV I 51mA L 1mA 1ms/DIV 137 F11a 51mA 1mA 5µs/DIV 137 F11b 2mV/DIV 51mA 1mA 1ms/DIV 137 F11b µ -166
µ µ R1 R2 R C 1 2 3 C C 8 7 6 5 L KEEP TRACES OR LEADS SHORT! D C OUT C IN GROUND AA CELL 137 F12 MAX HEIGHT PART VALUE DCR MFR (mm) COMMENT LQH3C1 1µH.57 Murata-Erie 2. Smallest Size DO168-13 1µH.16 Coilcraft 3. CD3-1 1µH.18 Sumida 3.2 CD5-1 1µH.1 Sumida.5 Best Efficiency CTX32CT-1 1µH.5 Coiltronics 2.2 121 Footprint µ µ µ µ µ -167
VENDOR COMPONENTS TELEPHONE Coilcraft Inductors (78) 639-6 Marcon Capacitors (78) 913-998 Murata-Erie Inductors, Capacitors () 36-13 Sumida Inductors (87) 956-666 Tokin Capacitors (8) 32-82 AVX Capacitors (27) 282-5111 Sprague Capacitors (63) 22-1961 Coiltronics Inductors (7) 21-7876 SHDN R1 R2 1k LBI R2 k 2k Q1 Q3 SHUTDOWN CURRENT START-UP CURRENT Q2 137 F13 LBO 3.3V 1M TO PROCESSOR SHDN 2mV INTERNAL REFERENCE 137 F1 R1 = V LB 2mV 2µA SHDN SHDN 2N396 V REF 2mV 1k 2k LBO LBI 1µF 137 F15-168
1.5V 1.5V CURRENT FLOW 1 CELL D1 D2 Q1 1 CELL D1 D2 Q1 137 F16 137 F17 2 OR 3 CELLS 1N1 137 F18-169
L1 1µH MBR52 3k V C R 1M 2 CELLS 1k M1 2N72 1nF GROUND = HIGH POWER/LOW NOISE FLOAT = Burst Mode OPERATION B R5 59k R3 698k LBO LBI SHDN C2* R1 1M SHUTDOWN R2 99k 1µF 3.3V 2mA C1 1µF 137 F19 3. LOW-POWER Burst Mode OPERATION C1 = AVX TPSC17K6R15 L1 = COILCRAFT DO168-13 SUMIDA CD3-1 * C2 OPTIONAL: REDUCES OUTPUT RIPPLE CAUSED BY C1'S ESR µ µ 5mV/DIV 1mV/DIV 1mA 1µA I 1mA L 1mA.2s/DIV 137 F2 2ms/DIV 137 F21 µ µ µ -17
1.V TO 3.3V C1* 22µF 6.3V L1 1µH. SHDN 1k 7pF 1N5818 1M 323k. 5V 1mA C2 22µF 6.3V 137 TA2 C1, C2: PANASONIC ECAJFQ221 (DIGI-KEY P56-ND) L1: SUMIDA CD3-1 2.1V TO.8V L1 1µH 2.2µF MBR52 3.3V 1mA 3 CELLS 1k 1pF V C SHDN 1.2M 68k L1* 1µF SHDN 137 TA3 L1: COILTRONICS CTX1-1 OR 2 MURATA ERIE LQH3C1 EFFICIENCY 7% TO 73% V L1 IN 1.8V TO 1V 1µH 3 2 2.2µF MBR52L 15mA 1 CELL AA OR AAA 7k V C LBO SHDN 22pF 1 = CHARGE = SHUTDOWN L1: COILTRONICS CTX1-1 LBI 1M OVERVOLTAGE 323k PROTECTION 2mV 3k 1nF 3V 1 1mV 28k 6.7Ω 3 CELLS NiCd 137 TA -171
L1 1µH D1 AA CELL Q1 2N396 C2 1k C3 22µF R2 22k LBO B V C LBI SHDN 1k NC D2 ma R1 5.1Ω C1 ON/OFF L1: MURATA-ERIE LQH3C1K D1: 1N18 C1, C2: D2, D3: LUMEX SSL-X1133SRC/ "MEGA-BRITE" RED LED OR PANASONIC LNG992CF9 HIGH BRIGHTNESS BLUE LED 137 TA5 3V TO 5.5V SHUTDOWN TANTALUM 1N18 D1: MOTOROLA MBR52L L1: MURATA-ERIE LQH3C1K 7k 2pF.33µF L1 1µH D1 SHDN V C 2M 1% 232k 1% 1pF 137 TA9 12V/3mA FROM 3V 12V/6mA FROM 5V ~25mV P-P RIPPLE.33µF 2 OPTIONAL DOUBLER. 2. 1V TO 5V SHUTDOWN 1k 1pF T1 1:12 3 1 6 SHDN V C 1N18 R2 2k 1% R1. T1: DALE LPE3325-A19, n = 12 (65) 665-931 ( ) R1 = 1.22V 1 R2 MAXIMUM DUTY CYCLE: 8% FOR FLYBACK, = DC n( V ) 1 DC FOR 1, MAXIMUM =.8 12(1.2) 37V 1.8 FOR 2, MAXIMUM 85V. HIGHER VOLTAGES ACHIEVED WITH CAPACITIVE DOUBLER OR TRIPLER NO SNUBBER REQUIRED WITH SPECIFIED TRANSFORMER AND < 5V 137 TA6-172
T1 5 3 6 1 2 1.5V 1 7pF 3kV 1.5V 1Ω Q1 C1. Q2 CCFL 1.5V D1 L1 33µH 1 CELL B SHDN V C. 1k. 1k 1N18 1k DIMMING 1N18 1 = OPERATE = SHUTDOWN 137 TA8 C1: WIMA MKP-2 D1: MOTOROLA MBR52L L1: SUMIDA CD5-33 T1: COILTRONICS CTX11611 Q1, Q2: ZETEX FZT-89-173
D1. D2 L1 D3 1pF 3.3M 16V TO 2V 5mA FROM 1 CELL 15mA FROM 2 CELLS 35mA FROM 3 CELLS 1, 2 OR 3 CELLS V C 1k SHDN 7pF 1M 215k C1 137 TA7 SHUTDOWN L1: 3.3µH (1 CELL).7µH (2 CELLS) 1µH (3 CELLS) SUMIDA CD3 MURATA-ERIE LQH3C COILCRAFT D168 C1: FOR OUTPUT. FOR OUTPUT D1 TO D3: MBR53 OR 1N18 3.3µF 1k PWM IN 3.3V, % TO 1% PART NUMBER DESCRIPTION COMMENTS LTC 1163 Triple High Side Driver for 2-Cell Inputs 1.8V Minimum Input, Drives N-Channel MOSFETs LTC117 Micropower Step-Down DC/DC Converter 9% Efficiency, 13µA I Q, 9V to 5V at 3mA LT132 High Output Current Micropower DC/DC Converter 5V/6mA from 2V, 2A Internal Switch, 2µA I Q LT13 2-Cell Micropower DC/DC Converter Low-Battery Detector Active in Shutdown LTC1/1/2 Ultralow Power Single/Dual Comparators with Reference 2.8µA I Q, Adjustable Hysteresis LTC1516 2-Cell to 5V Regulated Charge Pump 12µA I Q, No Inductors, 5V at 5mA from 3V Input LT1521 Micropower Low Dropout Linear Regulator 5mV Dropout, 3mA Current, 12µA I Q -17