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1 50A >50A >150A >300A 150A 300A 600A 1 Standard 1-pack 15 Chopper 17 2 Standard 2-pack 11 >600A 1200A >1200A 12 1,2 High Speed Module 19 High ower Module 13,16 rimeack 14, pack ,12 AT-NC 3 level 20 1 Discrete RB-IGBT 26 7 IM ,7 IM Discrete IGBT 26 2 IM for E/HE pack for E/HE 28 : rimeack In neon Technologies Note: rimeack is registered trademark of In neon Technologies AG, Germany. 2
2 1-pack / 2-pack roducts Map Ic (A) S D D 3600 R C C 2400 M152 M152 M UE 1500 XB XB 1400 M272 T G G 1200 M151 M151 M156 M155 UG 1000 M272 XA M155 N M256 M278 XA 650 J D E E X 600 M271 N X J 550 M277 M256 M271 M260 H 450 B D E 400 M275 M153 H 300 M274 M275 M277 M277 M A B 200 A N: M254 M M276 J: M260 A 100 M274 X: M282 M M263 M263 M pack 2-pack M indicates package number. 1-pack 1MBI Ic IGBT series & ackage type - ces 108 mm Standard ack C, R, UG mm High ower D, S, UE mm Module 2-pack 2MBI Ic IGBT series & ackage type A B D E H J, N, X - ces mm mm 108 mm Standard ack mm 108 mm 150 mm High ower G, T mm Module XA mm rimeack XB mm rimeack Infineon Technologies rimeack is registered trademark of Infineon Technologies AG, Germany IM & 6-pack roducts Map Ic (A) B Y Z R W A X B JC Z X R N W A X B U4B ower Integrated Module 7MBR Ic IGBT series & ackage type JA JB JC KA, KC KB, KD A, M,, W, Y B, N, R, X, Z ces 6-pack 6MBI Ic IGBT series & ackage type - ces mm mm mm mm mm mm 122 mm A, W mm 75 B B, X, U4B mm 1 mm KD KB KC KA IM A 6-pack JA KC KA KD KB JB A Y W M
3 Intelligent ower Module roducts Map Ic (A) 400 EA 6/7MB Ic IGBT series & ackage type - ces 7 in 1 6 in 1 R, S mm AA mm 300 BA DA, DN EA FN* mm mm mm mm 200 DA DN 631 EA R, S, type is Small IM with High oltage -IC. Thermal impedance of DN type is lower than DA type FN 630 DA DN BA 50 AA BA FN R S A AA indicates package number. 2 MB I 300 H Letter symbols : : IC: C: (sat): ton: toff: tf: 4
4 12 Ic 10A 7MBR10KA MBR10KA A 7MBR15KA MBR15KA A 7MBR20KA A 7MBR30KA M726 ress fit pins 15A 7MBR15KB A 7MBR25KB A 7MBR35KB A 7MBR50KB M727 ress fit pins 10A 7MBR10KC MBR10KC A 7MBR15KC MBR15KC A 7MBR20KC A 7MBR30KC M728 Solder pins 15A 7MBR15KD A 7MBR25KD A 7MBR35KD A 7MBR50KD M729 Solder pins In erter [IG T] rake [IG T+ ] Con erter [ iode] C S I C C C (sat) C S I C RR RR I I S ackage Net Cont. Ty. Cont. Cont. Ty. mass Am s. atts olts Am s. Am s. olts Am s. Grams 7MBR10KA MBR15KA MBR20KA MBR30KA MBR50KB MBR10KC MBR15KC MBR20KC MBR30KC MBR50KD MBR10KA MBR15KA MBR15KB MBR25KB MBR35KB MBR10KC MBR15KC MBR15KD MBR25KD MBR35KD : at Tj=25 5
![7MBR50JC120-50 7MBR50JC120-53 75A 7MBR75JC120-50 7MBR75JC120-53 100A 7MBR100JC120-50 7MBR100JC120-53 In erter [IG T] rake [IG T+ ] Con erter [ iode] C S I C C (sat) C S I C RR RR I I S ackage Net](/docs-images/102/153981018/images/5-1.jpg "Cont. Ty. Cont. Cont. Ty. mass Am s. olts Am s. Am s. olts Am s. Grams 7MBR8JA120-50 1200 8 2.25 1200 8 1200 1600 8 1.00 220 40 7MBR8JA120-53 1200 8 2.25 1200 8 1200 1600 8 1.00 220 40 7MBR15JA120-50 1200 15 2.")
5 40 42 M723 R S T N b B Gb Nb 1 Gu Eu U Gx N1 Gv Ev GY Gw Ew W Gz T1 T2 En Ic 8A 7MBR8JA MBR8JA A 7MBR15JA MBR15JA M724 R S T N b B Gb Nb 1 Gu Eu U Gx N1 Gv Ev GY Gw Ew W Gz T1 T2 En 25A 7MBR25JB MBR25JB A 7MBR35JB MBR35JB MBR35JB120A-50 7MBR35JB120A M725 R S T N b B Gb Nb 1 Gu Eu U Gx N1 Gv Ev GY Gw Ew W Gz T1 T2 En 50A 7MBR50JC MBR50JC A 7MBR75JC MBR75JC A 7MBR100JC MBR100JC In erter [IG T] rake [IG T+ ] Con erter [ iode] C S I C C (sat) C S I C RR RR I I S ackage Net Cont. Ty. Cont. Cont. Ty. mass Am s. olts Am s. Am s. olts Am s. Grams 7MBR8JA MBR8JA MBR15JA MBR15JA MBR25JB MBR25JB MBR35JB MBR35JB MBR35JB120A MBR35JB120A MBR50JC MBR50JC MBR75JC MBR75JC MBR100JC MBR100JC Ne rod cts 1 iniskii S IKR N INT RNATI NAL 2 " 50" Standard Lid " 53" Slim Lid Note1: iniskii is a registered trademark of S IKR N INT RNATI NAL Gm H. Note2: " 50" indicates Standard Lid ty es and " 53" indicates Slim Lid ty es. : at Tj=25 6
6 Ic 1 25A 7MBR25A R S T B U W 35A 7MBR35A A 7MBR50A M711 N N1 35A 7MBR35B ower Flow 50A 7MBR50B IN REC W 75A 7MBR75B MBR75B R S T U 100A 7MBR100B M712 INUT OUTUT 25A 7MBR25M A 7MBR35M A 7MBR50M R S T B U W M719 N N1 50A 7MBR50N ower Flow 75A 7MBR75N IN REC 100A 7MBR100N W 150A 7MBR150N R S T U M720 INUT OUTUT 25A 7MBR A 7MBR A 7MBR MBR R S T B U W 75A 7MBR M719 N N1 100A 7MBR R INUT 50A 7MBR50R S ower Flow 75A 7MBR75R T REC IN 100A 7MBR100R MBR100R A 7MBR150R MBR150R M720 OUTUT U W In erter [IG T] rake [IG T+ ] Con erter [ iode] C S I C C C (sat) C S I C RR RR I I S ackage Net Cont. Ty. Cont. Cont. Ty. mass Am s. atts olts Am s. Am s. olts Am s. Grams 7MBR50A MBR75B MBR100B MBR MBR MBR MBR100R MBR150R MBR25A MBR35A MBR35B MBR50B MBR75B MBR25M MBR35M MBR50M MBR50N MBR75N MBR100N MBR150N MBR MBR MBR MBR50R MBR75R MBR100R MBR150R : conoi In neon Technologies Note: conoi is registered trademarks of In neon Technologies AG, Germany
7 Ic 25A 7MBR25W A 7MBR35W A 7MBR50W M721 ress fit pins R S T B N N1 ower Flow U W IN REC W R S T U INUT OUTUT 50A 75A 100A 150A 7MBR50X MBR75X MBR100X MBR150X M722 ress fit pins 1 R S T B U W 25A 35A 50A 7MBR50Y A 7MBR75Y A 7MBR100Y MBR25Y MBR35Y MBR50Y M721 ress fit pins INUT S T N N1 R ower Flow REC IN OUTUT U W 50A 75A 100A 7MBR100Z A 7MBR150Z MBR50Z MBR75Z MBR100Z MBR150Z M722 ress fit pins In erter [IG T] rake [IG T+ ] Con erter [ iode] C S I C C C (sat) C S I C RR RR I I S ackage Net Cont. Ty. Cont. Cont. Ty. mass Am s. atts olts Am s. Am s. olts Am s. Grams 7MBR50Y MBR75Y MBR100Y MBR100Z MBR150Z MBR25W MBR35W MBR50W MBR50X MBR75X MBR100X MBR150X MBR25Y MBR35Y MBR50Y MBR50Z MBR75Z MBR100Z MBR150Z : conoi In neon Technologies : at Tj=25 Note: conoi is registered trademarks of In neon Technologies AG, Germany. 8
8 Ic U series 50A 6MBI50A MBI50A U W 75A 6MBI75A MBI75A A 6MBI100A MBI100A M636 Solder pins N 100A 6MBI100B MBI100U4B A 6MBI150B MBI150B MBI150U4B MBI180B MBI180B U W M633 Solder pins N 50A 6MBI50W MBI50W A 6MBI75W MBI75W A 6MBI100W MBI100W M647 ress fit pins N 100A 6MBI100X A 6MBI150X MBI150X MBI180X MBI180X M648 ress fit pins N U W U W C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 6MBI50A ± MBI75A ± MBI100A ± MBI150B ± MBI50W ± MBI75W ± MBI100W ± MBI150X ± MBI50A ± MBI75A ± MBI100A ± MBI100B ± MBI150B ± MBI180B ± MBI180B ± MBI50W ± MBI75W ± MBI100W ± MBI100X ± MBI150X ± MBI180X ± MBI180X ± MBI100U4B ± MBI150U4B ± : conoack In neon Technologies : at Tj=25 6 I I180 X Note: conoack is registered trademarks of In neon Technologies AG, Germany. 6 I , 6 I180 X ; remi m ty e (Lo Thermal Im edance ersion) 9
9 Ic U+ T1 + T2 W+ 225A 6MBI MBI A 6MBI MBI M9 C5 C3 C1 G5 G3 G1 E5 U1 E3 1 E1 W1 U2 2 W2 G6 G4 G2 E6 E4 E2 U- - W- 6MBI A 6MBI A 6MBI MBI C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 6MBI ± MBI ± MBI ± MBI ± MBI ± MBI ± MBI ± MBI ± Under de elo ment : at Tj=25 : conoack + In neon Technologies 80 : TI Thermal Interface aterial Note: conoack + is registered trademarks of In neon Technologies AG, Germany. 80 : re A lied Thermal Interface aterial 10
10 M263 Ic 75A 2MBI75A MBI75A A 2MBI100A MBI100A MBI100A A 2MBI150A MBI150A A 2MBI200A A 2MBI150B A 2MBI200B A 2MBI300B A 2MBI400B M A 400A 2MBI400D A 2MBI600D MBI300D MBI400D M275 * 2MBI450H-120F A 2MBI150H A 2MBI200H MBI200H A 2MBI300H MBI300H A 2MBI450H MBI450H-120F A 2MBI300E MBI300E A 2MBI400E A 2MBI450E A 2MBI600E MBI600E M276 M277 C S G S I C C C (sat) ( G =15 ) S itching time Cont. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 2MBI100A ± MBI150A ± MBI200A ± MBI300B ± MBI400B ± MBI400D ± MBI600D ± MBI600E ± MBI75A ± MBI100A ± MBI150A ± MBI150B ± MBI200B ± MBI300D ± MBI400D ± MBI200H ± MBI300H ± MBI450H ± MBI450H-120F ± MBI300E ± MBI450E ± MBI600E ± MBI75A ± MBI100A ± MBI150H ± MBI200H ± MBI300H ± MBI300E ± MBI400E ± Ne rod cts : at Tj 11
11 Ic 225A 2MBI225N MBI225N MBI225N-120S A 2MBI300N MBI300N MBI300N-120S A 2MBI450N MBI450N MBI450N MBI450N-120S-50 M A 2MBI550N A 2MBI600N MBI600N A 2MBI225X MBI225X A 2MBI300X MBI300X A 2MBI450X MBI450X A 2MBI550X A 2MBI600X M A 2MBI225J A 2MBI300J A 2MBI450J MBI450J A 2MBI550J A 2MBI600J M260 2MBI600J C S G S I C C C (sat) ( G =15 ) S itching time Cont. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 2MBI225N ± MBI225N ± MBI225N-120S ± MBI300N ± MBI300N-120S ± MBI450N ± MBI450N ± MBI450N-120S ± MBI600N ± MBI600N ± MBI225X ± MBI300X ± MBI450X ± MBI600X ± MBI225J ± MBI300J ± MBI450J ± MBI450J ± MBI600J ± MBI600J ± MBI300N ± MBI450N ± MBI550N ± MBI225X ± MBI300X ± MBI450X ± MBI550X ± MBI550J ± Ne rod cts, Under de elo ment : at Tj : 80 : TI Thermal Interface aterial Note: 80 : re A lied Thermal Interface aterial
12 U Series Ic 600A 2MBI600G-120 2MBI600G-170E 2MBI600T-170E 800A 2MBI800G-120 2MBI800G-170E 2MBI800T-170E 1200A 2MBI1200G-120 2MBI1200G-170E 2MBI1200T-170E M256, M C S G S I C C C (sat) ( G =15 ) S itching time Cont. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 2MBI600G ± MBI800G ± MBI1200G ± MBI600G-170E 1700 ± MBI800G-170E 1700 ± MBI1200G-170E 1700 ± MBI600T-170E 1700 ± MBI800T-170E 1700 ± MBI1200T-170E 1700 ± Note: 256: C ase late 278: AlSiC ase late : at Tj j=125 C 13
13 Ic 600A 2MBI600XA-120E-50 2MBI600XA-120E-54 Inverter 650A 2MBI650XA-170E-50 2MBI650XA-170E-54 2MBI650XA-170EA-50 2MBI650XA-170EA A 2MBI900XA-120E-50 2MBI900XA-120E-54 2MBI900XA MBI900XA MBI900XA-170E-50 2MBI900XA-170E A 2MBI1000XB-170E-50 2MBI1000XB-170E-54 Inverter 2MBI1000XB-170EA-50 2MBI1000XB-170EA A 2MBI1400XB-120E-50 2MBI1400XB MBI1400XB-170E-50 2MBI1400XB MBI1400XB-120E-54 2MBI1400XB MBI1400XB-170E-54 2MBI1400XB M271 M272 C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 2MBI600XA-120E ± MBI600XA-120E ± MBI900XA-120E ± MBI900XA-120E ± MBI1400XB-120E ± MBI1400XB-120E ± MBI900XA ± MBI900XA ± MBI1400XB ± MBI1400XB ± MBI650XA-170E ± MBI650XA-170E ± MBI650XA-170EA ± MBI650XA-170EA ± MBI900XA-170E ± MBI900XA-170E ± MBI1000XB-170E ± MBI1000XB-170E ± MBI1000XB-170EA ± MBI1000XB-170EA ± MBI1400XB-170E ± MBI1400XB-170E ± MBI1400XB ± MBI1400XB ± Ne rod cts, Under de elo ment : at Tj : rimeack In neon Technologies 54 sat A Note: rimeack is registered trademark of In neon Technologies AG, Germany. The rod cts ith s f x 54 on this age are la eled to s ecify the rank of sat and. The rod cts ith A on this age ha e o timized for the a lication ca sing hea y load thro gh. The o timized red ces and thermal resis tance. 14
14 108 M153 Ic 400A 1MBI MBI400F A 1MBI MBI600F A 1MBI C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 1MBI ± MBI ± MBI ± MBI400F ± MBI600F ± : at Tj 15
15 U Series Ic 800A 1MBI800UG A 1MBI1000UG A 1MBI1200C-120 1MBI1200C-170E 1MBI1200R-170E M151, M A 1MBI1600C-120 1MBI1600C-170E 1MBI1600R-170E 2400A 1MBI2400C-120 1MBI2400C-170E 1MBI2400R-170E 1200A 1MBI1200UE A 1MBI1500UE A 1MBI2400D-120 1MBI2400D-170E 1MBI2400S-170E 3600A 1MBI3600D-120 1MBI3600D-170E 1MBI3600S-170E M152, M156 C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 1MBI1200C ± MBI1600C ± MBI2400C ± MBI2400D ± MBI3600D ± MBI1200C-170E 1700 ± MBI1600C-170E 1700 ± MBI2400C-170E 1700 ± MBI2400D-170E 1700 ± MBI3600D-170E 1700 ± MBI1200R-170E 1700 ± MBI1600R-170E 1700 ± MBI2400R-170E 1700 ± MBI2400S-170E 1700 ± MBI3600S-170E 1700 ± MBI800UG ± MBI1000UG ± MBI1200UE ± MBI1500UE ± Note: 151, 152: C ase late 155, 156: AlSiC ase late : at Tj j=125 C, at Tj 16
16 34 94 M2 C1 Inverse Diode FWD NC G1 E1 E1C2 G2 E2 Inverse Diode E2 Ic U series U series 50A 1MBI50U4F-120L-50 75A 1MBI75U4F-120L A 1MBI100U4F-120L A 1MBI150A-120L A 1MBI200A-120L A 1MBI200U4H-120L A 1MBI300U2H-060L-50 FWD E2 NC 108 M259 G1 E1 E1C2 G2 E2 C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 1MBI300U2H-060L ± MBI50U4F-120L ± MBI75U4F-120L ± MBI100U4F-120L ± MBI200U4H-120L ± MBI150A-120L ± MBI200A-120L ± Ne rod cts : at Tj 17
17 M271 Low Side High Side Ic 650A 1MBI650XA-170EL-50 1MBI650XA-170EH-50 1MBI650XA-170EL-54 1MBI650XA-170EH A 1MBI1000XB-170EL-50 1MBI1000XB-170EH-50 1MBI1000XB-170EL-54 1MBI1000XB-170EH A 1MBI1400XB-120L-54 1MBI1400XB-120H-54 1MBI1400XB-170EL-54 1MBI1400XB-170EH M272 C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 1MBI1400XB-120L ± MBI1400XB-120H ± MBI650XA-170EL ± MBI650XA-170EL ± MBI1000XB-170EL ± MBI1000XB-170EL ± MBI1400XB-170EL ± MBI650XA-170EH ± MBI650XA-170EH ± MBI1000XB-170EH ± MBI1000XB-170EH ± MBI1400XB-170EH ± Under de elo ment : at Tj=25 : rimeack In neon Technologies 54 sat Note: rimeack is registered trademark of In neon Technologies AG, Germany. The rod cts ith s f x 54 on this age are la eled to s ecify the rank of sat and. Low Side High Side M271 Ic 900A 1MBI900XA-120D-50 1MBI900XA-120C-50 1MBI900XA-120D-54 1MBI900XA-120C-54 C S G S I C C C (sat) ( G =15 ) S itching time Cont. Ty. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 1MBI900XA-120C ± MBI900XA-120C ± MBI900XA-120D ± MBI900XA-120D ± : rimeack In neon Technologies : at Tj=25 54 sat 120Aoost ck cho er Note: rimeack is registered trademark of In neon Technologies AG, Germany. The rod cts ith s f x 54 on this age are la eled to s ecify the rank of sat and. Anti arallel diode c rrent rating is 120A. A lication circ it is oost ck cho er only. 18
18 Ic A 1MBI200HH-120L A 1MBI300HH-120L A 1MBI400HH-120L-50 M A 2MBI100HB M A 2MBI150HH A 2MBI200HH M A 2MBI100HJ A 2MBI150HJ A 2MBI200HJ A 2MBI300HJ M276 C S G S I C C C (sat) ( G =15 ) S itching time Cont. I C ton toff tf ackage Net mass Ty. Ty. olts Am s. atts Am s. Grams 1MBI200HH-120L ± MBI300HH-120L ± MBI400HH-120L ± MBI100HB ± MBI150HH ± MBI200HH ± MBI100HJ ± MBI150HJ ± MBI200HJ ± MBI300HJ ± : at Tj 19
19 T3 T1 Ic 300A 4MBI300G-120R MBI300G-120R A 4MBI400G-060R MBI400F-120R M403 T4 RB-IGBT T2 450A 4MBI450B-120R A 4MBI650B-120R A 4MBI900B-120R RB-IGBT 89 M A 4MBI600C M404 T1, T2 T3, T4 C S I C C C (sat) ( G =15 ) C S I C C C (sat) ( G =15 ) ackage Net mass Cont. Ty. I C Cont. Ty. I C Am s. atts Am s. Am s. atts Am s. 4MBI400G-060R MBI300G-120R MBI300G-120R MBI400F-120R MBI450B-120R MBI650B-120R MBI900B-120R MBI600C Ne rod cts, Under de elo ment : at Tj : Note: ty e is lo er thermal resistance ersion. 20
20 Ic Solder ins 50A 12MBI50N T3u T3v T3w T3u T3v T3w 75A 12MBI75N U W M T4u T4v T4w T4u T4v T4w 100A 12MBI100N N M A 12MBI50X ress Fit Contacts 75A 12MBI75X A 12MBI100X T3u T3u T3v T3v T3w T3w M T4u U T4v T4w W T4u T4v T4w 122 N M1202 T1, T2 T3, T4 C S I C C C (sat) ( G =15 ) C S I C C C (sat) ( G =15 ) ackage Net mass Cont. Ty. I C Cont. Ty. I C Am s. atts Am s. Am s. atts Am s. 12MBI50N MBI75N MBI100N MBI50X MBI75X MBI100X Ne rod cts : at Tj 21
21 Built-in protection functions -side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (External current detection and shutdown) Overheating protection (self shutdown) Temperature sensor output (temp, out) A Ic 15A 6MB15RD MB15SG MB15SA A 6MB20SA A 6MB30SA A 6MB15SH MB15SC A 6MB20SC A 6MB30SC In erter Control C S I C C (sat) CCL oot In t signal ackage Net Cont. CCH stra Aci e logic U C tem T H Alarm mass iode and oltage CCL fa lt o t t le el CCH Am s. olts Grams 6MB15RD MB15SG A 9.3 6MB15SA A 9.3 6MB20SA A 9.3 6MB30SA A 9.3 6MB15SH ) 633A 9.3 6MB15SC ) 633A 9.3 6MB20SC ) 633A 9.3 6MB30SC ) 633A 9.3 Ne rod cts 1 lock iagram High side bias voltage for IGBT driving B(U) B() B(W) ower supply CCH High side IN(HU) WM IN(H) signal input IN(HW) GND COM High-side Drv. High-side Drv. High-side Drv. U W GND COM ower supply CCL Low side IN(LU) WM IN(L) signal input IN(LW) Fault output FO Temperature sensor output TEM Low-side Drv. N(W) N() N(U) IS OC sensing voltage input 22
22 Built-in protection functions -side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (self shutdown) Overheating protection (self shutdown) Ic 10A 6MB10AA A 6MB15AA A 6MB20AA A 6MB25AA A 6MB30AA A 6MB50AA A 6MB25BA A 6MB35BA A 6MB50BA MB50BA A 6MB75BA A 6MB25FN MB25FN A 6MB35FN MB35FN A 6MB50FN MB50FN MB50FN MB50FN A 6MB75FN MB75FN A 6MB100FN MB100FN In erter rake Control C S I C C (sat) C S I C CC I C[IN ] U Alarm ackage Net Cont. Cont. in. C(ty.) U (ty.) Tj H(ty.) mass Am s. olts Am s. Am s. ms ms ms Grams 6MB20AA to MB30AA to MB50AA to MB50BA to MB75BA to MB50FN to MB75FN to MB100FN to MB50FN to MB75FN to MB100FN to MB10AA to MB15AA to MB25AA to MB25BA to MB35BA to MB50BA to MB25FN to MB35FN to MB50FN to MB25FN to MB35FN to MB50FN to
23 Built-in protection functions -side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (self shutdown) Overheating protection (self shutdown) Ic 25A 6MB25DA MB25DA A 6MB35DA MB35DA A 6MB50DA MB50DA MB50DA MB50DA MB50DN MB50DN A 6MB75DA MB75DA MB75DA MB75DA MB75DN MB75DN A 6MB100DA MB100DA MB100DA MB100DA MB100DN MB100DN MB100DN MB100DN A 6MB150DA MB150DA MB150DN MB150DN A 6MB200DA MB200DA MB200DN MB200DN A 6MB100EA MB100EA A 6MB150EA MB150EA A 6MB200EA MB200EA MB200EA MB200EA A 6MB300EA MB300EA A 6MB400EA MB400EA lock iagram Alarm output U Alarm output Alarm output W Supply voltage CCU Signal input inu GND U Supply voltage CCL inx Signal input for low side iny inz Alarm output ALM GND RALM re CC in GND re re- CCW inw GND W Tj-sensor IC-sensor re U W N Supply voltage CCL Alarm output ALM GND CCU inu GND U RALM inx re re RALM RALM RALM CC in GND iny re re CCW inw GND W inz re re Tj-sensor U W N IC-sensor 24 Supply voltage CCL Alarm output ALM GND Alarm output U Alarm output Alarm output W CCU inu GND U RALM inx re re RALM RALM RALM CC in GND iny re re CCW inw GND W inz re re Tj-sensor U W N IC-sensor B Supply voltage CCL Alarm output ALM Signal input inb GND RALM Alarm output U Alarm output Alarm output W RALM RALM RALM CCU inu GND U inx re re CC in GND iny re re CCW inw GND W re U W re inz N Tj-sensor IC-sensor
24 In erter rake Control C S I C C (sat) C S I C CC I C[IN ] U Alarm ackage Net Cont. Cont. in. C(ty.) U (ty.) Tj H(ty.) mass Am s. olts Am s. Am s. ms ms ms Grams 6MB50DA to MB75DA to MB100DA to MB100DN to MB150DA to MB150DN to MB200DA to MB200DN to MB50DA to MB75DA to MB100DA to MB100DN to MB150DA to MB150DN to MB200DA to MB200DN to MB200EA to MB300EA to MB400EA to MB200EA to MB300EA to MB400EA to MB25DA to MB35DA to MB50DA to MB50DN to MB75DA to MB75DN to MB100DA to MB100DN to MB25DA to MB35DA to MB50DA to MB50DN to MB75DA to MB75DN to MB100DA to MB100DN to MB100EA to MB150EA to MB200EA to MB100EA to MB150EA to MB200EA to N Note The rod cts ith N on this age ha e high heat dissi ation characteristics. 25
25 axim m Ratings C (sat) on off Qg trr C S I C I C tsc ( G =15 ) (Rg=10 ) ackage Net Tc=100 C IG T Ty. ty. ty. ty. mass Am s. Am s. sec. atts mj mj nc n sec Grams FGW85N60RB IG T in eld sto technology and trench gate str ct re ith Ultra fast olts class axim m Ratings C (sat) on off Qg Qrr C S I C I C ( G =15 ) (Rg=10 ) ackage Net Tc=100 C Ty. ty. I mass Am s. Am s. atts mj mj nc Grams FGW30N60D FGW35N60H FGW35N60HD FGW35N60HC FGW50N60H FGW50N60HD FGW50N60HC FGW50N60D FGW75N60H FGW75N60HD FGW75N60HC olts class axim m Ratings C (sat) on off Qg Qrr C S I C I C ( G =15 ) (Rg=10 ) ackage Net Tc=100 C Ty. ty. I mass Am s. Am s. atts mj mj nc Grams FGW15N120H FGW15N120HD FGW15N120D FGW25N120D FGW30N120H FGW30N120HD FGW40N120H FGW40N120HD FGW40N120D
26 IG T in eld sto technology and trench gate str ct re ith Ultra fast olts class axim m Ratings C (sat) on off Qg Qrr C S I C I C ( G =15 ) (Rg=10 ) ackage Net Tc=100 C Ty. ty. I mass Am s. Am s. atts mj mj nc Grams FGW25N120W FGW25N120WD FGW40N120W FGW40N120WD Ne rod cts art n m ers F G W 35 N 60 HD olarity Series q i alent circ it 27
27 fanction (Tj=25 C) C S I C(Cont) C (sat) Am s. ackage Net mass Grams 2MB600UN g : at Tj C S I C(Cont) I C(eak) C (sat) Am s. Am s. ackage Net mass Grams 6MBI400W IC=400A 1.70 I =400A 660g 6MBI600W IC=600A 1.70 I =600A 900g Under de elo ment 28
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FUJI ower Semiconductors IGBT/SiC Devices Selection Guide Small IM AGE 8 IM AGE 9 6-ack AGE 11 Standard 2-ack AGE 13 Standard 1-ack/ Chopper AGE 15 High ower Module AGE 17 rimeack AGE 18 T/I-type C 3-level
25A2-J-0005
FUJI ower Semiconductors IGBT/SiC Devices Selection Guide Small IM AGE 8 IM AGE 9 6-ack AGE 11 Standard 2-ack AGE 13 Standard 1-ack/ Chopper AGE 15 High ower Module AGE 17 rimeack AGE 18 T/I-type C 3-level
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Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variablespeed drives for motors, uninterruptable power supplies, and more. IGBT has superior
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FUJI SEMICONDUCTORS 25A2-W-0001b 2 3 5 6 7 9 11 13 14 15 16 17 18 19 20 22 23 26 26 27 28 28 29 31 33 35 44 45 46 47 47 49 50 51 55 57 61 62 63 63 64 64 65 65 66 66 67 69 71 72 75 76 77 78 79 79 80 81
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FUJI SEMICONDUCTORS 25A2-W-0001d Fuji Electric Power Semiconductors contibuting Energy Management in various fields Fuji Electric provides Power Semiconductors enabling high-efficiency energy usage in
Microsoft PowerPoint - 2章（和訳ver）_15A版_rev.1.1.ppt
第 2 章 端子記号 用語の説明 内容 ページ 1. 端子記号の説明. 2-2 2. 用語の説明 2-3 2-1 1. 端子記号の説明 表 2-1と表 2-2はそれぞれ端子記号と定義について説明しています 表 2-1 端子記号の説明 端子番号 端子名 端子説明 3 VB(U) ハイサイド駆動電源電圧端子 ( 上アームU 相 IGBT 駆動 ) 5 VB(V) ハイサイド駆動電源電圧端子 ( 上アームV
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5 28 EAR CCLECCN ECCN 1. 2. 3. 4. 5.EAR page 1 of 28 WWW.Agilent.co.jp -> Q&A ECCN 10020A 10070A 10070B 10070C 10071A 10071B 10072A 10073A 10073B 10073C 10074A 10074B 10074C 10076A 10229A 10240B 10430A
案内（最終2）.indd
1 2 3 4 5 6 7 8 9 Y01a K01a Q01a T01a N01a S01a Y02b - Y04b K02a Q02a T02a N02a S02a Y05b - Y07b K03a Q03a T03a N03a S03a A01r Y10a Y11a K04a K05a Q04a Q05a T04b - T06b T08a N04a N05a S04a S05a Y12b -
LT 低コスト、シャットダウン機能付き デュアルおよびトリプル300MHz 電流帰還アンプ
µ µ LT1398/LT1399 V IN A R G 00Ω CHANNEL A SELECT EN A R F 3Ω B C 97.6Ω CABLE V IN B R G 00Ω EN B R F 3Ω 97.6Ω V OUT OUTPUT (00mV/DIV) EN C V IN C 97.6Ω R G 00Ω R F 3Ω 1399 TA01 R F = R G = 30Ω f = 30MHz
案内最終.indd
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SIRIUS_CS3*.indd
SIRIUS Innovations SIRIUS SIRIUS Answers for industry. SIRIUS SIRIUS S00 S0 SIRIUS SIRIUS ZX0-ORAZ-0AB0 7.5kW 6 S00 7 8 7.5kW 9 S00 0 8.5kW S0 8.5kW S0 5 6 7 IO-Link AS-InterfaceRT 8 8US 5 6 SIRIUS SIRIUS
iiiC Store.Category.Electronic Component.Power Modules
FUJI SEMICONDUCTORS Power MOSFETs Rectifier diodes Pressure sensors Power devices Integrated circuits Step Forward, Raise Value Ratings and Characteristics Page Super FAP-E 3 series... 2 Super FAP-G series...
Triple 2:1 High-Speed Video Multiplexer (Rev. C
www.tij.co.jp OPA3875 µ ± +5V µ RGB Channel OPA3875 OPA3875 (Patented) RGB Out SELECT ENABLE RED OUT GREEN OUT BLUE OUT 1 R G B RGB Channel 1 R1 G1 B1 X 1 Off Off Off 5V Channel Select EN OPA875 OPA4872
CRA3689A
AVIC-DRZ90 AVIC-DRZ80 2 3 4 5 66 7 88 9 10 10 10 11 12 13 14 15 1 1 0 OPEN ANGLE REMOTE WIDE SET UP AVIC-DRZ90 SOURCE OFF AV CONTROL MIC 2 16 17 1 2 0 0 1 AVIC-DRZ90 2 3 4 OPEN ANGLE REMOTE SOURCE OFF
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MAX665S//X ABSOLUTE MAXIMUM ATINGS B4P to PKN (MAX665X) to 24 B3P to PKN (MAX665) to 8 B2P to PKN (MAX665S) to 2 BP to PKN, B2P to B
9-65; ev ; / µ µ MAX665S//X PAT MAX665SESA MAX665ESA MAX665XESA TEMP. ANGE -4 C to 85 C -4 C to 85 C -4 C to 85 C PIN- PACKAGE 8 SO 8 SO 8 SO CELL COUNT 2 3 4 TOP IEW () I.C. (B4P) 8 I.C. [B3P] B4P B3P
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Overture 68W ( ) 0.1 (THD N) 20Hz 20kHz 4 68W 8 38W SPiKe (Self Peak Instantaneous Temperature ( Ke)) SOA (Safe Operating Area) SPiKe 2.0 V ( ) 92dB (min) SN 0.03 THD N IMD (SMTPE) 0.004 V CC 28V 4 68W
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LM7171 高速、高出力電流、電圧帰還型オペアンプ
Very High Speed, High Output Current, Voltage Feedback Amplifier Literature Number: JAJS842 2 1 6.5mA 4100V/ s 200MHz HDSL 100mA 15V S/N ADC/DAC SFDR THD 5V VIP III (Vertically integrated PNP) 19850223
LM5021 AC-DC Current Mode PWM Controller (jp)
LM5021 LM5021 AC-DC Current Mode PWM Controller Literature Number: JAJSAC6 LM5021 AC-DC PWM LM5021 (PWM) LM5021 (25 A) 1 ( ENERGY STAR CECP ) Hiccup (Hiccup ) 8 LM5021 100ns 1MHz AC-DC PWM 5021 LM Steve
Unidirectional Measurement Current-Shunt Monitor with Dual Comparators (Rev. B
www.tij.co.jp INA206 INA207 INA208 INA206-INA208 INA206-INA208 V S 1 14 V IN+ V S 1 10 V IN+ OUT CMP1 IN /0.6V REF 2 3 1.2V REF 13 12 V IN 1.2V REF OUT OUT CMP1 IN+ 2 3 9 8 V IN CMP1 OUT CMP1 IN+ 4 11
LM35 高精度・摂氏直読温度センサIC
Precision Centigrade Temperature Sensors Literature Number: JAJSB56 IC A IC D IC IC ( ) IC ( K) 1/4 55 150 3/4 60 A 0.1 55 150 C 40 110 ( 10 ) TO-46 C CA D TO-92 C IC CA IC 19831026 24120 11800 ds005516
LM150/LM350A/LM350 3A 可変型レギュレータ
LM150,LM350,LM350A LM150/LM350A/LM350 3-Amp Adjustable Regulators Literature Number: JAJSBC0 LM350A/LM350 3A LM350 1.2V 33V 3A 3 IC 2 & IC ADJ 6 ADJ LM350 100V ADJ LM350 ADJ 1.2V 3A LM350A 3A LM350 3A
LM6172 デュアル高速低消費電力、低歪み電圧帰還アンプ
Dual High Speed, Low Power, Low Distortion, Voltage Feedback Amplifiers Literature Number: JAJS854 100MHz 3000V/ s 50mA 2.3mA/ 15V ADSL 5V VIP III (Vertically Integrated PNP) LM6171 Dual High Speed, Low
LM4663 2 Watt Stereo Class D Audio Pwr Amp w/Stereo Headphone Amplifier (jp)
2 Watt Stereo Class D Audio Power Amplifier with Stereo Headphone Amplifier Literature Number: JAJS693 Boomer 2006 4 A very minor text edit (typo). (MC) Converted to nat2000 DTD. Few edits on Table 1 and
OPA134/2134/4134('98.03)
OPA OPA OPA OPA OPA OPA OPA OPA OPA TM µ Ω ± ± ± ± + OPA OPA OPA Offset Trim Offset Trim Out A V+ Out A Out D In +In V+ Output In A +In A A B Out B In B In A +In A A D In D +In D V NC V +In B V+ V +In
AD8212: 高電圧の電流シャント・モニタ
7 V typ 7 0 V MSOP : 40 V+ V SENSE DC/DC BIAS CIRCUIT CURRENT COMPENSATION I OUT COM BIAS ALPHA 094-00 V PNP 0 7 V typ PNP PNP REV. A REVISION 007 Analog Devices, Inc. All rights reserved. 0-9 -- 0 40
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Fuji Electric has a lineup of power MOSFETs ranging from medium to high-voltage types with features such as low power loss, low noise, and low on-resistance. The Super J-MOS Series uses superjunction technology,
F9222L_Datasheet.pdf
Introduction Fuji Smart power device M-POWER2 for Multi-oscillated current resonant type power supply Summary System: The ideal and Fuji s original system It includes many functions(soft-switching,stand-by).
LM117/LM317A/LM317 可変型3 端子レギュレータ
LM117,LM317 LM117/LM317A/LM317 3-Terminal Adjustable Regulator Literature Number: JAJSBC1 LM317A/LM317 3 3 LM317A 3 LM317 1.2 37V 1.5A 3 IC 2 / IC AC IC 6 3 LM317 3-Terminal Adjustable Regulator LM117
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DC Fan 8mm sq. General Specifications San Ace 8 15mm thick (GA type), 15mm thick, 2mm thick (GA type) 2mm thick, 25mm thick (GA type), 25mm thick (S type) 25mm thick (GV type), 25mm thick 25mm thick (San
R1RW0416DI シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
過電流保護用／突入電流抑制用／過熱検知用"ポジスタ"
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( ) (I) (AT) (I) E DC 0A ECU I NO. 0A STO. A IN TC SI C S A A Stop amp S A A A(A) Junction Connector 0 M E E Q ( ) ack Up amp S A A A(A) Junction Conn
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800mA 800mA LM1117I 800mA LM1117 Chris Russell LM1117 800mA 1.2V LM1117 LM317 LM1117 2 1.25V 13.8V 1.8V 2.5V 2.85V 3.3V 5V 5 LM1117 1 LM1117 LLP TO-263 SOT-223 TO-220 TO-252 10 F 19970801 23900 DS100919
1/68 A. 電気所 ( 発電所, 変電所, 配電塔 ) における変圧器の空き容量一覧 平成 31 年 3 月 6 日現在 < 留意事項 > (1) 空容量は目安であり 系統接続の前には 接続検討のお申込みによる詳細検討が必要となります その結果 空容量が変更となる場合があります (2) 特に記載
1/68 A. 電気所 ( 発電所, 変電所, 配電塔 ) における変圧器の空き容量一覧 平成 31 年 3 月 6 日現在 < 留意事項 > (1) 空容量は目安であり 系統接続の前には 接続検討のお申込みによる詳細検討が必要となります その結果 空容量が変更となる場合があります (2) 特に記載のない限り 熱容量を考慮した空き容量を記載しております その他の要因 ( 電圧や系統安定度など ) で連系制約が発生する場合があります
LM358
LM358 2 DC LM358 5V DC 15V DC micro SMD (8 micro SMD) LM358 LM2904 LM258 LM158 20000801 19870224 33020 23900 11800 2002 3 ds007787 Converted to nat2000 DTD added avo -23 to the first page Edited for 2001
cms.pdf
RoHS compliant INTERNAL STRUTURE FEATURES Part name over Slider Housing Slider contact Fixed contact Terminal pin lick spring Ground terminal Material Steel (SP), Tin-plated Polyamide opper alloy, Gold-plated
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2009527 T 0 n T n( T 0 T) n : : T : 0.00016-1 : 0.0010-1 T : T 0 : T = 100T 0 = 30n = 80 V JIS 0 JIS Z 8710 200 T h V T h V T c T c 0.003 0.01 0.1 JIS C 1602 0.4 K -40 375 1.5 T -40 125 0.5 T ca T
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H Phase & Enable (UVLO) V DD =2.55.5V =3.08.0V Io=400mA I DD =200uA typ. (Mode Select) 2 Phase & Enable (ALL L ) STB L (UVLO) Alarm CMOS SSOP20-C3 - - (Ta=25 C) (Ta=25) - 2 - - 3 - - 4 - - 5 - OUTA IN2B
LM317A
3 3 LM317A 3 LM317 1.2 37V 1.5A 3 IC 2 / IC AC IC 6 3 LM317 3-Terminal Adjustable Regulator LM117 19860710 33200 24060 11800 ds009063 Increase the print percent on all Typical Curves modified formatting
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PC90L0NSZ0F PC90L0NSZ0F µ µ µ PC90L PC90L Date Sep.. 00 SHARP Corporation 7 NC Anode Cathode NC 7 GND V O (Open collector) V E (Enable) V CC H H L L H H H L H L L H L: (0) H: () PC90L0NSZ0F PC90L0YSZ0F
SCR8-17XX Technical Data Optical Magnetic Brushless Coreless Encoder Motor Unitmm 5 Number of commutator segments Brushes Precious Metal Bearings Slee
CORELESS MOTOR SCR8-17 SCR10-17 SCR10-25 SCR12-13 SCR12-18 SCR12-26 SCR13-20 SCR13-28 NEW SCR16-25 SCR16-35 SCR17-25 SCR17-35 SCR18-37 SC21-37 SC24-32 Smaller and higher-performance motors realized by
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R1LV1616H-I シリーズ
お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
LTC 単一5VAppleTalk トランシーバ
LTC µ µ µ µ TYPICAL APPLICATI O LTC 0.µF CHARGE PMP CPEN EN EN O O 0 DO 0 V µf 0.µF µf D D = Ω TO 0Ω Ω TO 0Ω 00pF LTC TA0 - LTC ABSOLTE AXI RATI GS Supply Voltage ( )... V Input Voltage Logic Inputs...
h1-4_cs5.5.indd
SIMATIC HMI SIMATIC HMI SIMATIC HMI Comfort Panel All-in-One SIMATIC Comfort Panel all-in-one 4 22 1677 0 100% IP65 CEULKCRCMATEX HMI VB HMI ATEX 4 12 SIMATIC HMI Basic Panel 2 nd Generation SIMATIC Basic
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NJM88/A ma.µf SOT-89- TO--(NJM88ADL) ESON6-H(NJM88AKH) NJM88U NJM88ADL NJM88AKH (...97mm) 7dB typ. (f=khz, Vo=V ) Vno=µVrms typ..µf (Vo.7V) Io(max.)=mA Vo±.%.8V typ. (Io=mA ) ON/OFF SOT-89-(NJM88U) / TO--(NJM88ADL)
(2018 2Q C) [ ] R 2 2 P = (a, b), Q = (c, d) Q P QP = ( ) a c b d (a c, b d) P = (a, b) O P ( ) a p = b P = (a, b) p = ( ) a b R 2 {( ) } R 2 x = x, y
![(2018 2Q C) [ ] R 2 2 P = (a, b), Q = (c, d) Q P QP = ( ) a c b d (a c, b d) P = (a, b) O P ( ) a p = b P = (a, b) p = ( ) a b R 2 {( ) } R 2 x = x, y](/thumbs/101/151465237.jpg "(2018 2Q C) [ ] R 2 2 P = (a, b), Q = (c, d) Q P QP = ( ) a c b d (a c, b d) P = (a, b) O P ( ) a p = b P = (a, b) p = ( ) a b R 2 {( ) } R 2 x = x, y")
(2018 2Q C) [ ] R 2 2 P = (a, b), Q = (c, d) Q P QP = a c b d (a c, b d) P = (a, b) O P a p = b P = (a, b) p = a b R 2 { } R 2 x = x, y R y 2 a p =, c q = b d p + a + c q = b + d q p P q a p = c R c b
AN15880A
DATA SHEET 品種名 パッケージコード QFH064-P-1414H 発行年月 : 2008 年 12 月 1 目次 概要.. 3 特長.. 3 用途.. 3 外形.. 3 構造...... 3 応用回路例.. 4 ブロック図.... 5 端子.. 6 絶対最大定格.. 8 動作電源電圧範囲.. 8 電気的特性. 9 電気的特性 ( 設計参考値 )... 10 技術資料.. 11 入出力部の回路図および端子機能の
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