iiiC Store.Category.Electronic Component.Power Modules

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1 FUJI SEMICONDUCTORS Power MOSFETs Rectifier diodes Pressure sensors Power devices Integrated circuits Step Forward, Raise Value

2 Ratings and Characteristics Page Super FAP-E 3 series... 2 Super FAP-G series... 4 Trench Power MOSFET... 9 FAP-III series (P channel) FAP-IIIB series Multi-chip Power Device for Switching Power Supply MOSFET Automotive Trench Power MOSFET MOSFET Automotive Intelligent Power MOSFET Automotive IPS series (Intelligent Power Switches) Molded Package Type IGBTs Fast Recovery Diodes for IGBT U-IPM seriesintelligent Power Modules Econo IPM series (Intelligent Power Modules) R-IPM3 series (Intelligent Power Modules) R-IPM series (Intelligent Power Modules) IGBT Modules, U series IGBT Modules, T series IGBT Modules, S series IGBT Modules, P series Schottky-Barrier Diodes(SBD) Low IR Schottky-Barrier Diodes Super LLD I (Continuous mode PFC) Super LLD II (Discontinuous mode PFC) Super LLD III (Discontinuous mode PFC) Low-Loss Fast Recovery Diodes (LLD) Low-Loss FastSoft Recovery Diodes (LLD) Control ICs for Power Supply Control ICs with inductor for Power Supply Lithium-ion Battery Protection IC Control ICs for Power Supply Pressure Sensors Dimensions...42 Order Quantity...54 Type Number Index...55 For maintenance products only...58 Discontinued Products...59

3 Low-on resistance and low switching noise V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP05N50E ±0.5 TBD TO-220AB 2.0 FMA05N50E ±0.5 TBD TO-220F 2.0 FMI05N50E ±0.5 TBD T-Pack(L) 1.6 FMC05N50E ±0.5 TBD T-Pack(S) 1.6 FMP07N50E ±0.5 TBD TO-220AB 2.0 FMA07N50E ±0.5 TBD TO-220F 2.0 FMI07N50E ±0.5 TBD T-Pack(L) 1.6 FMC07N50E ±0.5 TBD T-Pack(S) 1.6 FMP08N50E ±0.5 TBD TO-220AB 2.0 FMA08N50E ±0.5 TBD TO-220F 2.0 FMP12N50E ±0.5 TBD TO-220AB 2.0 FMA12N50E ±0.5 TBD TO-220F 2.0 FMI12N50E ±0.5 TBD T-Pack(L) 1.6 FMC12N50E ±0.5 TBD T-Pack(S) 1.6 FMP16N50E ± TO-220AB 2.0 FMA16N50E ± TO-220F 2.0 FMI16N50E ± T-Pack(L) 1.6 FMC16N50E ± T-Pack(S) 1.6 FMP20N50E ± TO-220AB 2.0 FMA20N50E ± TO-220F 2.0 FMI20N50E ± T-Pack(L) 1.6 FMC20N50E ± T-Pack(S) 1.6 FMA23N50E ±0.5 TBD TO-220F 2.0 FMH23N50E ±0.5 TBD TO-3P(Q) 5.0 FMR23N50E ±0.5 TBD TO-3PF 6.0 FMH28N50E ±0.5 TBD TO-3P(Q) 5.0 FMR28N50E ±0.5 TBD TO-3PF R DS (on): V GS=10V, 2 P D: T C=25 C Letter symbols VDSS: Drain-source voltage ID : Continuous drain current ID(pulse) Pulsed drain current RDS(on) Drain-source on-state resistance Under development PD Maximum power dissipation VGS Gate-source voltage VGS(th) Gate threshold voltage Qg Total gate charge The Super FAP-E 3 series is a product satisfying the quality assurance level of general consumer use. If you intend to use the product for equipment requiring higher reliability, such as equipment for vehicles and medical equipment, please contact Fuji Electric Device Technology.Do not use the product for the equipment requiring strict reliability such as aerospace equipment. 2

4 Low-on resistance and low switching noisecontinued V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP03N60E ±0.5 TBD TO-220AB 2.0 FMA03N60E ±0.5 TBD TO-220F 2.0 FMI03N60E ±0.5 TBD T-Pack(L) 1.6 FMC03N60E ±0.5 TBD T-Pack(S) 1.6 FMP05N60E ±0.5 TBD TO-220AB 2.0 FMA05N60E ±0.5 TBD TO-220F 2.0 FMI05N60E ±0.5 TBD T-Pack(L) 1.6 FMC05N60E ±0.5 TBD T-Pack(S) 1.6 FMP06N60E ±0.5 TBD TO-220AB 2.0 FMA06N60E ±0.5 TBD TO-220F 2.0 FMP10N60E ±0.5 TBD TO-220AB 2.0 FMA10N60E ±0.5 TBD TO-220F 2.0 FMI10N60E ±0.5 TBD T-Pack(L) 1.6 FMC10N60E ±0.5 TBD T-Pack(S) 1.6 FMP11N60E ±0.5 TBD TO-220AB 2.0 FMA11N60E ±0.5 TBD TO-220F 2.0 FMI11N60E ±0.5 TBD T-Pack(L) 1.6 FMC11N60E ±0.5 TBD T-Pack(S) 1.6 FMP13N60E ± TO-220AB 2.0 FMA13N60E ± TO-220F 2.0 FMI13N60E ± T-Pack(L) 1.6 FMC13N60E ± T-Pack(S) 1.6 FMP16N60E ± TO-220AB 2.0 FMA16N60E ± TO-220F 2.0 FMI16N60E ± T-Pack(L) 1.6 FMC16N60E ± T-Pack(S) 1.6 FMA19N60E ±0.5 TBD TO-220F 2.0 FMH19N60E ±0.5 TBD TO-3P(Q) 5.0 FMR19N60E ±0.5 TBD TO-3PF 6.0 FMH23N60E ±0.5 TBD TO-3P(Q) 5.0 FMR23N60E ±0.5 TBD TO-3PF R DS (on): V GS=10V, 2 P D: T C=25 C 3

5 Low-on resistance and low gate charge V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 FMW92N15G ±30 3 to 5 80 TO-247-K SK ± TO SK R ± TO-3PF 6.0 2SK ± TO SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 FMW73N20G ±30 3 to 5 80 TO-247-K SK ± TO SK R ± TO-3PF 6.0 2SK ± TO R DS (on): V GS=10V, 2 P D: T C=25 C The Super FAP-G series is a product satisfying the quality assurance level of general consumer use. If you intend to use the product for equipment requiring higher reliability, such as equipment for vehicles and medical equipment, please contact Fuji Electric Device Technology.Do not use the product for the equipment requiring strict reliability such as aerospace equipment. 4

6 Low-on resistance and low gate chargecontinued V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TFP 0.8 FMA18N25G ±30 3 to 5 26 TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 2SK R ± TO-3PF 6.0 FMW59N25G ±30 3 to 5 80 TO-247-K SK ± TO SK R ± TO-3PF 6.0 2SK ± TO FMW56N28G ±30 3 to 5 80 TO-247-K SK ± TO SK R ± TO-3PF 6.0 2SK MR ± TO-220F 2.0 2SK ±30 3 to TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TFP 0.8 FMW53N30G ±30 3 to 5 80 TO-247-K SK ± TO SK R ± TO-3PF 6.0 2SK ± TO SK ±30 3 to TO-220AB 2.0 2SK MR ±30 3 to TO-220F 2.0 FMU03N45G ±30 3 to K-pack(L) 0.6 FMD03N45G ±30 3 to K-pack 0.6 2SK ±30 3 to 5 13 TO-220AB 2.0 2SK MR ±30 3 to 5 13 TO-220F 2.0 FMU04N45G ±30 3 to 5 13 K-pack(L) 0.6 FMD04N45G ±30 3 to 5 13 K-pack(S) 0.6 2SK ±30 3 to TO-220AB 2.0 2SK MR ±30 3 to TO-220F 2.0 FMU06N45G ±30 3 to K-pack(L) 0.6 FMD06N45G ±30 3 to K-pack(S) 0.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ±30 3 to 5 33 TO-220AB 2.0 2SK MR ±30 3 to 5 33 TO-220F 2.0 2SK L, S, SJ ±30 3 to 5 33 T-pack 1.6 2SK ±30 3 to 5 33 TFP R DS (on): V GS=10V, 2 P D: T C=25 C 5

7 Low-on resistance and low gate charge V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK ±30 3 to 5 13 TO-220AB 2.0 2SK MR ±30 3 to 5 13 TO-220F 2.0 2SK L, S, SJ ±30 3 to 5 13 T-pack 1.6 FMU04N50G ±30 3 to 5 13 K-pack(L) 0.6 FMD04N50G ±30 3 to 5 13 K-pack(S) 0.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 FMU06N50G ±30 3 to 5 15 K-pack(L) 0.6 FMD06N50G ±30 3 to 5 15 K-pack(S) 0.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK MR ± to TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ±30 3 to 5 20 TFP 0.8 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TO FML19N50G ±30 3 to 5 32 TFP 0.8 FMW25N50G ±30 3 to 5 54 TO SK ± TO SK R ± TO-3PF 6.0 2SK ± TO SK L ± K-pack(L) 0.6 2SK S ± K-pack(S) 0.6 2SK ±30 3 to 5 13 TO-220AB 2.0 2SK MR ±30 3 to 5 13 TO-220F 2.0 2SK L, S, SJ ±30 3 to 5 13 T-pack 1.6 FMU03N60G ±30 3 to 5 13 K-pack(L)-C2 0.6 FMD03N60G ±30 3 to 5 13 K-pack(S)-C R DS (on): V GS=10V, 2 P D: T C=25 C 6

8 Low-on resistance and low gate chargecontinued V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMU05N60G ±30 3 to 5 15 K-pack(L) 0.6 FMD05N60G ±30 3 to 5 15 K-pack(S) 0.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK R ± TO-3PF 6.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 FMW16N60G ±30 3 to 5 33 TO SK ± TO FMW21N60G ±30 3 to 5 54 TO SK ± TO SK R ± TO-3PF 6.0 2SK ± TO SK MR ± TO-220F 2.0 2SK MR ± TO-220F 2.0 2SK R ± TO-3PF 6.0 FMW17N70G ±30 3 to 5 46 TO SK ± TO-220AB 2.0 2SK MR ± TO-220F R DS (on): V GS=10V, 2 P D: T C=25 C 7

9 Low-on resistance and low gate chargecontinued V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK ±30 3 to 5 13 TO-220AB 2.0 2SK MR ±30 3 to 5 13 TO-220F 2.0 2SK L, S, SJ ±30 3 to 5 13 T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK MR ± to TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 FMW07N90G ±30 3 to 5 25 TO SK ± TO SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S, SJ ±30 3 to 5 31 T-pack 1.6 FMW10N90G ±30 3 to TO SK ± TO SK R ± TO-3PF 6.0 FMW13N90G ±30 3 to 5 46 TO SK ± TO SK R ± TO-3PF R DS (on): V GS=10V, 2 P D: T C=25 C Built-in FRED V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Qg Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK L, S ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK L, S ± T-pack 1.6 2SK ± TO R DS (on): V GS=10V, 2 P D: T C=25 C 8

10 Low-on resistance and high gate capability V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Device type Max. 1 Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams FMP80N10T /-20 2 to 4 TO-220AB 2.0 FMA80N10T /-20 2 to 4 TO-220F 2.0 FMI80N10T /-20 2 to 4 T-pack(L) 1.6 FMC80N10T /-20 2 to 4 T-pack(S) 1.6 FMB80N10T /-20 2 to 4 T-pack(SJ) 1.6 FMP65N15T /-20 2 to 4 TO-220AB 2.0 FMA65N15T /-20 2 to 4 TO-220F 2.0 FMI65N15T /-20 2 to 4 T-pack(L) 1.6 FMC65N15T /-20 2 to 4 T-pack(S) 1.6 FMB65N15T /-20 2 to 4 T-pack(SJ) 1.6 FMP49N20T /-20 2 to 4 TO-220AB 2.0 FMA49N20T /-20 2 to 4 TO-220F 2.0 FMI49N20T /-20 2 to 4 T-pack(L) 1.6 FMC49N20T /-20 2 to 4 T-pack(S) 1.6 FMB49N20T /-20 2 to 4 T-pack(SJ) R DS (on): V GS=10V, 2 P D: T C=25 C The Trench Power MOSFET series is a product satisfying the quality assurance level of general consumer use. If you intend to use the product for equipment requiring higher reliability, such as equipment for vehicles and medical equipment, please contact Fuji Electric Device Technology.Do not use the product for the equipment requiring strict reliability such as aerospace equipment. 9

11 Avalanche rated V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams 2SJ472-01L, S ± K-pack 0.6 2SJ314-01L, S ± K-pack 0.6 2SJ473-01L, S ± K-pack 0.6 2SJ474-01L, S ± T-pack 1.6 2SJ ± TO-220AB 2.0 2SJ476-01L, S ± T-pack 1.6 2SJ477-01MR ± TO-220F R DS (on): V GS=10V, 2 P D: T C=25 C Ultra low on-state resistance V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams 2SK ± TO-220AB 2.0 2SK L, S ± T-pack 1.6 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK L, S ± T-pack 1.6 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK R ± TO-3PF 6.0 2SK ± TO-3P 5.5 2SK ± TO-3P 5.5 2SK R ± TO-3PF 6.0 2SK ± TO-220AB 2.0 2SK L, S ± T-pack 1.6 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK L, S ± T-pack 1.6 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK ± TO-220AB 2.0 2SK MR ± TO-220F 2.0 2SK R ± TO-3PF 6.0 2SK R ± TO-3PF 6.0 2SK ± TO-3P 5.5 2SK ± TO-3P 5.5 2SK ± TO-3P 5.5 2SK R ± TO-3PF 6.0 2SK ± TO-3P 5.5 2SK R ± TO-3PF R DS (on): V GS=10V, 2 P D: T C=25 C 10

12 Multi-chip Power Device for Switching Power Supply Power MOSFET (Q1) Power- MOSFET (Q2) Control IC Device type V DSS R DS (on) V DSS R DS (on) V CC (on) Tj (OH) Package Net mass Max. Max. Volts Ohms () Volts Ohms () Volts C Grams MP2A to 150 SIP-23(F233) 3.8 MP2A to 150 SIP-23(F233) 3.8 MP2A to 150 SIP-23(F233) 3.8 MP2A to 150 SIP-23(F233) 3.8 MP2A to 150 SIP-23(F233) 3.8 MP2A to 150 SIP-23(F233) 3.8 MP2A to 150 SIP-23(F233) 3.8 Under development Power MOSFET (Q1) Power- MOSFET (Q2) Control IC Device type V DSS R DS (on) V DSS R DS (on) V CC (on) Tj (OH) Package Net mass Max. Max. Volts Ohms () Volts Ohms () Volts C Grams MP3A to 150 SIP-23(F233) 3.8 MP3A to 150 SIP-23(F233) 3.8 Under development Fuji's ideal and original system It includes many functions (Soft-switching, stand-by) Multiple-chip Power Device : M-Power2A contains and two MOSFET's in SIP-23pin package. M-Power2A has various types of protection function. Efficiency(%) DC/DC AC100V AC200V High effi ciency (a reduction in SMPC size possible.) DC/DC : 95.3% (DC input:385v, output:24v) PFCDC/DC : 88.4% (AC100V), 90.7%(AC200V) Stand-by mode (A series : External, Conventional series : Built in) Low noise (a reduction the noise suppression part is possible) MOSFETs : Turn-on : ZVSZCS, Turn-off : ZVS Diodes (secondary side) Surge voltage does not occur at reverse recovery Fail-safety (Built in protection functions : OC, SC, OV, Tj(OH)) Easy design power supply (Reduction of design time) Po(W) at 24V Efficiency - Load characteristic at normal mode DC/DC: 95.3% (DC input:385v,output:24v PFCDC/DC: 88.4%(AC100V) 90.7%(AC200V) 11

13 Automotive Trench Power MOSFET V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams 2SK MR / TO-220F 2.0 2SK / TO-220AB 2.0 2SK L, S / T-pack 1.6 2SK SJ / D2-pack 1.6 2SK R DS (on): V GS=10V / TO-3P 5.5 Automotive Intelligent Power MOSFET V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams F K-pack 0.6 F T-pack 1.6 F K-pack 0.6 F K-pack 0.6 F SOP F SOP F K-pack 0.6 F T-pack 1.6 F T-pack 1.6 F SSOP R DS (on): V CC=12V Contains 2 channels Automotive IPS series ( Intelligent Power Switches ) V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Device type Max. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams F5044H SOP F5045P SOP F5049H SOP R DS (on): V CC=12V 12

14 Molded Package Type IGBTs 600 volts class molded package types IGBT FWD Device type V CES V GES I C25 I C100 P C V CE (sat) Max. V F P C trr Package Net Tc=25 Tc=100 V GE=15V Switching time mass Cont. Cont. Max. I C ton toff tf Volts Volts Amps. Amps. Watts Volts Amps. µsec. µsec. µsec. Volts Watts µsec. Grams 1MBG05D ± T-pack(S) 1.6 1MBC ± TO-220AB 2.0 1MBC05D ± TO-220AB 2.0 1MBH05D ± TO-3PL 9.5 1MBG10D ± T-pack(S) 1.6 1MBC ± TO-220AB 2.0 1MBC10D ± TO-220AB 2.0 1MBH10D ± TO-3PL 9.5 1MBC ± TO-220AB 2.0 1MB15D ± TO-3P 5.5 1MBH15D ± TO-3PL 9.5 1MB ± TO-3P 5.5 1MB20D ± TO-3P 5.5 1MBH20D ± TO-3PL 9.5 1MB ± TO-3P 5.5 1MBH30D ± TO-3PL 9.5 1MBH ± TO-3PL 9.5 1MBH50D ± TO-3PL volts class molded package types for UPS IGBT FWD Device type V CES V GES I C25 I C100 P C V CE (sat) Max. V F P C trr Package Net Tc=25 Tc=100 V GE=15V Switching time mass Cont. Cont. Max. I C ton toff tf Volts Volts Amps. Amps. Watts Volts Amps. µsec. µsec. µsec. Volts Watts µsec. Grams 1MBK30D-060S 600 ± TO MBK50D-060S 600 ± TO MBH50D-060S 600 ± TO-3PL 9.5 1MBH75D-060S 600 ± TO-3PL 9.5 Letter symbols VCES: Collector-to-emitter rated voltage (Gate-to-emitter short-circuited) VGES: Gate-to-emitter rated voltage (Collector-to-emitter short-circuited) IC: Rated collector current PC: Maximum power dissipation VCE (sat): Collector-to-emitter saturation voltage ton: Turn-on time toff: Turn-off time tf: Fall time 13

15 Molded Package Type IGBTs 1200 volts class molded package types IGBT FWD Device type V CES V GES I C25 I C100 P C V CE (sat) Max. V F P C trr Package Net Tc=25 Tc=100 V GE=15V Switching time mass Cont. Cont. Max. I C ton toff tf Volts Volts Amps. Amps. Watts Volts Amps. µsec. µsec. µsec. Volts Watts µsec. Grams 1MBC ± TO-220AB 2.0 1MB03D ± TO-3P 5.5 1MBH03D ± TO-3PL 9.5 1MB ± TO-3P 5.5 1MB05D ± TO-3P 5.5 1MBH05D ± TO-3PL 9.5 1MB ± TO-3P 5.5 1MB08D ± TO-3P 5.5 1MBH08D ± TO-3PL 9.5 1MB ± TO-3P 5.5 1MB10D ± TO-3P 5.5 1MBH10D ± TO-3PL 9.5 1MBH ± TO-3PL 9.5 1MBH15D ± TO-3PL 9.5 1MBH ± TO-3PL 9.5 1MBH25D ± TO-3PL 9.5 Fast Recovery Diodes for IGBT FRD Molded FRD V RRM I FM V F trr Device type Switching time (Max.) Package Net mass Volts Amps. Volts (µsec.) di/dt=100a/µs 70 recovery Grams ERW (TC=118 ) 3 (IF=5A) 0.3 (IF=5A, VR=200V) TO-220AB(single) 2.0 ERW (TC=100 ) 3 (IF=10A) 0.3 (IF=10A, VR=200V) TO-220AB(single) 2.0 ERW (TC=92 ) 3 (IF=15A) 0.3 (IF=15A, VR=200V) TO-220AB(single) 2.0 ERW (TC=91 ) 3 (IF=20A) 0.3 (IF=20A, VR=200V) TO-220AB(single) 2.0 ERW (TC=81 ) 3 (IF=30A) 0.3 (IF=30A, VR=200V) TO-220AB(single) 2.0 ERW (TC=77 ) 3 (IF=50A) 0.3 (IF=50A, VR=200V) TO-3P(single) 5.5 ERW (TC=129 ) 3 (IF=2.5A) 0.35 (IF=2.5A, VR=200V) TO-220AB(single) 2.0 ERW (TC=127 ) 3 (IF=5A) 0.35 (IF=5A, VR=200V) TO-220AB(single) 2.0 ERW (TC=124 ) 3 (IF=8A) 0.35 (IF=8A, VR=200V) TO-220AB(single) 2.0 ERW (TC=123 ) 3 (IF=10A) 0.35 (IF=10A, VR=200V) TO-220AB(single) 2.0 ERW (TC=122 ) 3 (IF=15A) 0.35 (IF=15A, VR=200V) TO-3P(single) 5.5 ERW (TC=113 ) 3 (IF=25A) 0.35 (IF=25A, VR=200V) TO-3P(single) 5.5 ERW (TC=90 ) 3 (IF=50A) 0.3 (IF=50A, VR=200V) TO-3PL

16 1200 volts class/all-silicon IPM with N-side alarm function Inverter Brake Control Device type V CES I C V CE(sat V CES I C V CC I OC[INV] VUV T COH TjOH Alarm Package Net Cont. Max. Cont. Typ. Min. Min. Min. mass Volts Amps. Volts Volts Amps. Volts Amps Volts Grams 6MBP25RU2A to N-side P MBP50RU2A to N-side P MBP75RU2A to N-side P MBP25RU2A to N-side P MBP50RU2A to N-side P MBP75RU2A to N-side P Econo IPM seriesintelligent Power Modules 600, 1200 volts class/all-silicon IPM with P and N-side alarm function Inverter Brake Control Device type V CES I C V CE(sat V CES I C V CC I OC[INV] VUV T COH TjOH Alarm Package Net Cont. Max. Cont. Typ. Min. Min. Min. mass Volts Amps. Volts Volts Amps. Volts Amps Volts Grams 6MBP50TEA to P & N-side P MBP75TEA to P & N-side P MBP100TEA to P & N-side P MBP150TEA to P & N-side P MBP50TEA to P & N-side P MBP75TEA to P & N-side P MBP100TEA to P & N-side P MBP150TEA to P & N-side P MBP25TEA to P & N-side P MBP50TEA to P & N-side P MBP75TEA to P & N-side P MBP25TEA to P & N-side P MBP50TEA to P & N-side P MBP75TEA to P & N-side P R-IPM3 seriesintelligent Power Modules 600 volts class/all-silicon IPM with N-side alarm function Inverter Brake Control Device type V CES I C V CE(sat V CES I C V CC I OC[INV] VUV T COH TjOH Alarm Package Net Cont. Max. Cont. Typ. Min. Min. Min. mass Volts Amps. Volts Volts Amps. Volts Amps Volts Grams 6MBP20RTA to N-side P MBP50RTB to N-side P MBP75RTB to N-side P MBP100RTB to N-side P MBP150RTB to N-side P MBP50RTB to N-side P MBP75RTB to N-side P MBP100RTB to N-side P MBP150RTB to N-side P

17 (Intelligent Power Modules) 600, 1200 volts class/all-silicon IPM with N-side alarm function Inverter Brake Control Device type V CES I C V CE(sat) V CES I C V CC I OC[INV] VUV T COH TjOH Alarm Package Net Cont. Max. Cont. Typ. Min. Min. Min. mass Volts Amps. Volts Volts Amps. Volts Amps Volts Grams 6MBP15RH to N-side P MBP20RH to N-side P MBP30RH to N-side P MBP50RA to N-side P MBP75RA to N-side P MBP100RA to N-side P MBP150RA to N-side P MBP200RA to N-side P MBP300RA to N-side P MBP50RA to N-side P MBP75RA to N-side P MBP100RA to N-side P MBP150RA to N-side P MBP200RA to N-side P MBP300RA to N-side P MBP15RA to N-side P MBP25RA to N-side P MBP50RA to N-side P MBP75RA to N-side P MBP100RA to N-side P MBP150RA to N-side P MBP25RA to N-side P MBP50RA to N-side P MBP75RA to N-side P MBP100RA to N-side P MBP150RA to N-side P , 1200 volts class/all-silicon IPM with P and N-side alarm function Inverter Brake Control Device type V CES I C V CE(sat) V CES I C V CC I OC[INV] VUV T COH TjOH Alarm Package Net Cont. Max. Cont. Typ. Min. Min. Min. mass Volts Amps. Volts Volts Amps. Volts Amps Volts Grams 6MBP50RTJ to P & N-side P MBP75RTJ to P & N-side P MBP100RTJ to P & N-side P MBP150RTJ to P & N-side P MBP50RTJ to P & N-side P MBP75RTJ to P & N-side P MBP100RTJ to P & N-side P MBP150RTJ to P & N-side P MBP25RJ to P & N-side P MBP50RJ to P & N-side P MBP75RJ to P & N-side P MBP25RSB to P & N-side P MBP25RJ to P & N-side P MBP50RJ to P & N-side P MBP75RJ to P & N-side P

18 ECONOPIM TM PIM/Built-in converter and brake U series ECONOPIM TM InverterIGBT Brake [IGBTFWD] ConverterDiode Device type V CES I C P C V CE(sat V CES I C V RRM V RRM Io V FM I FSM Package Net Cont. Max. Cont. Cont. Max. mass Volts Amps. Watts Volts Volts Amps. Volts Volts Amps Volts Amps Grams 7MBR30U2A M MBR50U2A M MBR75U2B M MBR100U2B M MBR25UA M MBR35UA M MBR35UB M MBR50UA M MBR50UB M MBR75U4B M MBR100U4B M ECONOPACK TM ECONOPACK TM 600, 1200, 1700 volts class, 6 in one-package U series ECONOPACK TM and ECONOPACK TM V CES V GES I C P C V CE (sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 6MBI75U2A M MBI100U2B M MBI150U2B M MBI75UC M MBI100UC M MBI35U4A M MBI50U4A M MBI75U4A M MBI75U4B M MBI100U4B M MBI150U4B M MBI225U M MBI300U M MBI450U M MBI100U4B M MBI150U4B M MBI225U M MBI300U M MBI450U M ECONOPACK TM 1200 volts class, 3 in one-package U series ECONOPACK TM V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 3MBI150U M MBI150UC M Note: ECONOPIM TM, ECONOPACK TM and ECONOPACK TM are registered trademarks of Infineon Technology AG, Germany. 17

19 IGBT Modules, U series 600, 1200, 1700 volts class, 2 in one-package U series V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 2MBI150U2A M MBI200U2A M MBI300U2B M MBI400U2B M MBI600U2E M MBI75U4A M MBI100U4A M MBI150U4A M MBI150U4B M MBI200U4B M MBI200U4D M MBI200U4H M MBI225U4N M MBI225U4J M MBI300U4D M MBI300U4E M MBI300U4H M MBI300U4N M MBI300U4J M MBI400U4H M MBI450U4E M MBI450U4N M MBI450U4J M MBI600U4G M MBI800U4G M MBI1200U4G M MBI100U4H M MBI150U4H M MBI200U4H M MBI300U4H M MBI400U4H M MBI600U4G M MBI800U4G M MBI1200U4G M Under development 1200, 1700 volts class, 1 in one-package U series V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 1MBI300U M MBI400U M MBI600U M MBI600U4B M MBI800U4B M MBI1200U4C M MBI1600U4C M MBI2400U4D M MBI3600U4D M MBI1200U4C M MBI1600U4C M MBI2400U4D M MBI3600U4D M Under development

20 600 volts class, 2 in one-package T series V CES V GES I C P C V CE (sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 2MBI200TA ± M MBI300TA ± M MBI400TB ± M volts class, 4 in one-package T series V CES V GES I C P C V CE (sat) (V GE=15V) Switching time (Max.) Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 4MBI75T ± M MBI100T ± M MBI150T ± M MBI200T ± M V 6 SECONOPACK TM 600 volts class, 6 in one-package S series ECONOPACK TM V CES V GES I C P C V CE (sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 6MBI75S ± M MBI100S ± M Note: ECONOPACK TM is a registered trademark of Infi neon Technology AG, Germany. 19

21 PIM SECONOPIM TM PIM/Built-in converter and brake S series ECONOPIM TM Inverter IGBT Brake IGBTFWD Converter Diode Device type V CES I C P C V CEsat V CES I C V RRM V RRM I O V FM I FSM Package Net mass Cont. Max. Cont. Cont. Max. Grams Volts Amps. Watts Volts Volts Amps. Volts Volts Amps. Volts Volts 7MBR30SA M MBR50SA M MBR50SB M MBR75SB M MBR100SB M MBR10SA M MBR15SA M MBR25SA M MBR35SB M MBR50SB M MBR10SA M MBR15SA M MBR25SA M MBR35SB M MBR50SB M Note: ECONOPIM TM is a registered trademark of Infi neon Technology AG, Germany. PIM S PIM/Built-in converter with thyristor and brake S series V CES V GES I C P C V CE (sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 7MBR20SC ± M MBR30SC ± M MBR50SC ± M MBR75SD ± M MBR100SD ± M MBR10SC ± M MBR15SC ± M MBR25SC ± M MBR35SD ± M MBR50SD ± M

22 ECONOPACK TM 1200, 1400 volts class, 6 in one-package S series ECONOPACK TM V CES V GES I C P C V CE (sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 6MBI10S ± M MBI15S ± M MBI25S ± M MBI35S ± M MBI50S ± M MBI75S ± M MBI100S ± M MBI35S ± M MBI50S ± M MBI75S ± M MBI100S ± M Note: ECONOPACK TM is a registered trademark of Infi neon Technology AG, Germany volts class, 2 in one-package and 1 in one-package S series V CES V GES I C P C V CE (sat) (V GE=15V) Switching time Max. Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 2MBI100SC ± M MBI150SC ± M MBI200S ± M MBI300S ± M MBI300S ± M MBI400S ± M IGBT Modules, P series 1200, 1400 volts class/high speed switching and low noise V CES V GES I C P C V CE (sat) (V GE=15V) Switching time (Max.) Device type Cont. Max. I C ton toff tf Package Net mass Volts Volts Amps. Watts Volts Amps. µsec. µsec. µsec. Grams 2MBI50P ± M MBI75P ± M MBI100PC ± M MBI150PC ± M MBI200PB ± M MBI300P ± M MBI600PX ± M MBI600PX ± M

23 3 1 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V FM I 3 RRM Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams SD SMD (Tl=96) to (IF=2.0A) SD SD SMD (Tl=103) to (IF=3.0A) SD SD SMD (Tl=124) to (IF=2.0A) SD CB (Tl=133) to (IF=1.5A) Lead SD SMD (Tl=127) to (IF=3.0A) SD FD (Tl=134) to (IF=3.0A) Lead SD SMD (Tl=100) to (IF=4.0A) SD ERA (Ta=45) to (IF=0.6A) Lead ERA (Ta=25) to (IF=1.0A) Lead ERA (Tl=136) to (IF=1.0A) Lead SC SMD (Tl=136) to (IF=1.0A) SC 0.06 SD SMD (Tl=120) to (IF=2.0A) SD SD SMD (Tl=125) to (IF=2.0A) SD ERB (Tl=130) to (IF=2.0A) Lead ERB (Tl=130) to (IF=2.0A) Lead SD SMD (Tl=100) to (IF=3.0A) SD SD SMD (Tl=116) to (IF=3.0A) SD SD SMD (Tl=122) to (IF=3.0A) SD ERC (Tl=130) to (IF=3.0A) Lead SD SMD (Tl=96) to (IF=4.0A) SD ERC81S (Tl=108) to (IF=5.0A) Lead ERA (Tl=136) to (IF=1.0A) Lead SC SMD (Tl=136) to (IF=1.0A) SC 0.06 ERB (Tl=130) to (IF=2.0A) Lead SD SMD (Tl=115) to (IF=3.0A) SD SD SMD (Tl=121) to (IF=2.5A) SD ERC (Tl=131) to (IF=3.0A) Lead ERA (Tl=131) to (IF=1.0A) Lead SC SMD (Tl=131) to (IF=1.0A) SC 0.06 ERA (Tl=131) to (IF=1.0A) Lead ERB (Ta=50) to (IF=2.0A) Lead SD SMD (Tl=112) to (IF=3.0A) SD ERC (Tl=122) to (IF=3.0A) Lead SD SMD (Tl=105) to (IF=3.0A) SD CB (Tl=124) to (IF=2.0A) Lead FD (Tl=115) to (IF=3.0A) Lead FD (Tl=106) to (IF=4.0A) Lead CB (Tl=116) to (IF=2.0A) Lead FD (Tl=113) to (IF=3.0A) Lead FD (Tl=102) to (IF=4.0A) Lead CB (Tl=121) to (IF=2.0A) Lead FD (Tl=122) to (IF=3.0A) Lead FD (Tl=111) to (IF=4.0A) Lead Conditions ms. 3 V R=V RRM 1 Resistive load 2 Sine wave, 10ms 3 V R=V RRM 4,15x15mm 4 Mounted to fabric base epoxy resin printed circuits land 15 15mm 5 10x10mm 5 P.C board mounting land 10 10mm 6 20x20mm 6 Mounted Cu fi ns 20 20mm on the both lead Letter symbols VRRM Repetitive peak reverse voltage VRSM Non-repetitive peak reverse voltage IO Average output current IFSM Surge current Tj Junction temperature Ta Ambient temperature Tc Case temperature 22 Tstg Storage temperature VFM Forward voltage IRRM Reverse current trr Reverse recovery time Rthj-c Thermal resistance (Junction to case) Tl Lead temperature IF(AV) Average forward current

24 3 1 in one-package Continued SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V FM I 3 RRM Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams KS826S04 SMD (Tc=110) to (I F=5.0A) 5 10 K-pack(S) 0.6 YG811S04R (Tc=122) to (I F=5.0A) TO-220F 2.0 YG812S04R (Tc=124) to (I F=10A) TO-220F 2.0 YG811S06R (Tc=127) to (I F=5.0A) TO-220F 2.0 YG811S09R (Tc=116) to (I F=4.0A) TO-220F 2.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms 3 V R=V RRM 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams KP883C (Tc=89) to (IF=2.5A) K-pack(P) 0.6 KS883C02 SMD (Tc=89) to (IF=2.5A) K-pack(S) 0.6 YG881C02R (Tc=103) to (IF=2.0A) TO-220F 2.0 YG882C02R (Tc=94) to (IF=4.0A) TO-220F 2.0 YG885C02R (Tc=81) to (IF=8.0A) TO-220F 2.0 KP823C (Tc=117) to (IF=2.5A) K-pack(P) 0.6 KS823C03 SMD (Tc=117) to (IF=2.5A) K-pack(S) 0.6 YG831C03R (Tc=127) to (IF=2.0A) TO-220F 2.0 YG802C03R (Tc=126) to (IF=4.0A) TO-220F 2.0 YG832C03R (Tc=118) to (IF=4.0A) TO-220F 2.0 YG835C03R (Tc=99) to (IF=6.0A) TO-220F 2.0 YG838C03R (Tc=85) to (IF=12.5A) TO-220F 2.0 KP823C (Tc=107) to (IF=2.5A) K-pack(P) 0.6 KS823C04 SMD (Tc=107) to (IF=2.5A) K-pack(S) 0.6 YG801C04R (Tc=125) to (IF=2.0A) TO-220F 2.0 YG831C04R (Tc=122) to (IF=2.0A) TO-220F 2.0 YG802C04R (Tc=110) to (IF=4.0A) TO-220F 2.0 YG832C04R (Tc=112) to (IF=4.0A) TO-220F 2.0 YG803C04R (Tc=92) to (IF=7.0A) TO-220F 2.0 YG805C04R (Tc=100) to (IF=10A) TO-220F 2.0 YG835C04R (Tc=96) to (IF=8.0A) TO-220F 2.0 YG838C04R (Tc=85) to (IF=12.5A) TO-220F 2.0 YG801C06R (Tc=125) to (IF=2.0A) TO-220F 2.0 YG802C06R (Tc=118) to (IF=4.0A) TO-220F 2.0 YG803C06R (Tc=94) to (IF=6.0A) TO-220F 2.0 YG805C06R (Tc=108) to (IF=8.0A) TO-220F 2.0 MS808C06 SMD (Tc=118) to (IF=12.5A) TFP 0.8 KP823C (Tc=100) to (IF=2.0A) K-pack(P) 0.6 KS823C09 SMD (Tc=100) to (IF=2.5A) K-pack(S) 0.6 YG801C09R (Tc=117) to (IF=2.0A) TO-220F 2.0 YG802C09R (Tc=102) to (IF=4.0A) TO-220F 2.0 YG801C10R (Tc=117) to (IF=1.5A) TO-220F 2.0 YG802C10R (Tc=102) to (IF=3.0A) TO-220F 2.0 YG805C10R (Tc=91) to (IF=5.0A) TO-220F 2.0 YG808C10R (Tc=80) to (IF=10A) TO-220F 2.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 3 2 Sine wave, 10ms per element 3 per element 4 V R=V RRM 4 V R=V RRM per element 23

25 3 1 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A /W Grams YG861S12R (Tc=104) to TO-220F 2.0 YG861S15R (Tc=94) to TO-220F 2.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 IF=Io 4 V R=V RRM 2 Sine wave, 3 IF=Io 4 V R=V RRM 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A /W Grams YG862C04R 45 10(Tc=129) to TO220F 2.0 YA862C04R 45 10(Tc=138) to TO220AB 2.0 TS862C04R SMD 45 10(Tc=138) to T-pack(S) 1.6 YG865C04R 45 20(Tc=115) to TO220F 2.0 YA865C04R 45 20(Tc=126) to TO220AB 2.0 TS865C04R SMD 45 20(Tc=126) to T-pack(S) 1.6 YG868C04R 45 30(Tc=105) to TO220F 2.0 YA868C04R 45 30(Tc=122) to TO220AB 2.0 TS868C04R SMD 45 30(Tc=122) to T-pack(S) 1.6 YG869C04R 45 40(Tc=112) to TO220F 2.0 YA869C04R 45 40(Tc=120) to TO220AB 2.0 YG862C06R 60 10(Tc=124) to TO220F 2.0 YA862C06R 60 10(Tc=136) to TO220AB 2.0 TS862C06R SMD 60 10(Tc=136) to T-pack(S) 1.6 YG865C06R 60 20(Tc=109) to TO220F 2.0 YA865C06R 60 20(Tc=122) to TO220AB 2.0 TS865C06R SMD 60 20(Tc=122) to T-pack(S) 1.6 YG868C06R 60 30(Tc=101) to TO220F 2.0 YA868C06R 60 30(Tc=119) to TO220AB 2.0 TS868C06R SMD 60 30(Tc=119) to T-pack(S) 1.6 YG869C06R 60 40(Tc=105) to TO220F 2.0 YA869C06R 60 40(Tc=114) to TO220AB 2.0 YG862C08R 80 10(Tc=109) to TO-220F 2.0 YA862C08R 80 10(Tc=126) to TO-220AB 2.0 TS862C08R SMD 80 10(Tc=126) to T-pack(S) 1.6 YG865C08R 80 20(Tc=89) to TO-220F 2.0 YA865C08R 80 20(Tc=107) to TO-220AB 2.0 TS865C08R SMD 80 20(Tc=107) to T-pack(S) 1.6 YG868C08R 80 30(Tc=72) to TO-220F 2.0 YA868C08R 80 30(Tc=105) to TO-220AB 2.0 TS868C08R SMD 80 30(Tc=105) to T-pack(S) 1.6 YG869C08R 80 40(Tc=86) to TO220F 2.0 YA869C08R 80 40(Tc=98) to TO220AB 2.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 IF=0.5Io1 2 Sine wave, 10ms per element 3 IF=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 24

26 3 2 in one-packagecontinued SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I O 1 I FSM 2 Tj and Tstg V FM 3 I RRM 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A /W Grams YG862C10R (Tc=118) to TO220F 2.0 YA862C10R (Tc=132) to TO220AB 2.0 TS862C10R SMD (Tc=132) to T-pack(S) 1.6 YG865C10R (Tc=103) to TO220F 2.0 YA865C10R (Tc=117) to TO220AB 2.0 TS865C10R SMD (Tc=117) to T-pack(S) 1.6 YG868C10R (Tc=91) to TO220F 2.0 YA868C10R (Tc=113) to TO220AB 2.0 TS868C10R SMD (Tc=113) to T-pack(S) 1.6 MS868C10R SMD (Tc=114) to TFP 0.8 YG869C10R (Tc=94) to TO220F 2.0 YA869C10R (Tc=105) to TO220AB 2.0 YG862C12R (Tc=122) to TO-220F 2.0 YA862C12R (Tc=137) to TO-220AB 2.0 TP862C12R (Tc=137) to T-pack(P) 1.6 TS862C12R SMD (Tc=137) to T-pack(S) 1.6 YG865C12R (Tc=116) to TO-220F 2.0 YA865C12R (Tc=126) to TO-220AB 2.0 PH865C (Tc=126) to TO TP865C12R (Tc=126) to T-pack(P) 1.6 TS865C12R SMD (Tc=126) to T-pack(S) 1.6 YG868C12R (Tc=116) to TO-220F 2.0 YA868C12R (Tc=122) to TO-220AB 2.0 PH868C (Tc=122) to TO TS868C12R SMD (Tc=122) to T-pack(S) 1.6 YG862C15R (Tc=117) to TO-220F 2.0 YA862C15R (Tc=134) to TO-220AB 2.0 TP862C15R (Tc=134) to T-pack(P) 1.6 TS862C15R SMD (Tc=134) to T-pack(S) 1.6 YG865C15R (Tc=101) to TO-220F 2.0 PH865C (Tc=109) to TO YA865C15R (Tc=115) to TO-220AB 2.0 TP865C15R (Tc=115) to T-pack(P) 1.6 TS865C15R SMD (Tc=115) to T-pack(S) 1.6 MS868C15 SMD (Tc=113) to TFP 0.8 YG868C15R (Tc=113) to TO-220F 2.0 YA868C15R (Tc=119) to TO-220AB 2.0 TS868C15R SMD (Tc=119) to T-pack(S) 1.6 PH868C (Tc=129) to TO Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 IF=0.5Io1 2 Sine wave, 10ms per element 3 IF=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 25

27 3 1 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I p(max) 1 I 2 FSM Tj and Tstg V FM I 3 RRM trr 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA961S6R to (I F=8A) TO-220AB 2.0 YG961S6R to (I F=8A) TO-220F 2.0 YA962S6R to (I F=10A) TO-220AB 2.0 YG962S6R to (I F=10A) TO-220F 2.0 YA963S6R to (I F=15A) TO-220AB 2.0 YG963S6R to (I F=15A) TO-220F 2.0 Conditions 1 PFC 1 Ipmax value at PFC circuit 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms 3 V R=V RRM 4 IF=0.1A, IR=0.2A, Irec=0.05A IF=0.1A, IR=0.2A, Irec=0.05A 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I p(max) 1 I 2 FSM Tj and Tstg V FM I 3 RRM trr 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YG965C6R to (I F=10A) TO-220F 2.0 TS965C6R SMD to (I F=10A) T-pack(S) 1.6 PH965C to (I F=10A) TO YG967C6R to (I F=15A) TO-220F 2.0 TS967C6R SMD to (I F=15A) T-pack(S) 1.6 PH967C to (I F=15A) TO Conditions 1 PFC 1 Ipmax value at PFC circuit 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms per element 3 V R=V RRM per element 4 IF=0.1A, IR=0.2A, Irec=0.05A IF=0.1A, IR=0.2A, Irec=0.05A 1 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V FM I 3 RRM trr 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA971S6R 600 8(Tc=116) to (I F=8A) TO-220AB 2.0 YG971S6R 600 8(Tc=89) to (I F=8A) TO-220F 2.0 YA972S6R (Tc=115) to (I F=10A) TO-220AB 2.0 YG972S6R (Tc=89) to (I F=10A) TO-220F 2.0 YG971S8R 800 5(Tc=93) to (I F=5A) TO-220F 2.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms 3 V R=V RRM 4 IF=0.1A, IR=0.2A, Irec=0.05A 4 IF=0.1A, IR=0.2A, Irec=0.05A 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V FM I 3 RRM trr 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA975C6R (Tc=106) to (I F=10A) TO-220AB 2.0 YG975C6R (Tc=89) to (I F=10A) TO-220F 2.0 PH975C (Tc=97) to (I F=10A) TO Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 V R=V RRM 2 Sine wave, 10ms per element 3 V R=V RRM per element 4 IF=0.1A, IR=0.2A, Irec=0.05A IF=0.1A, IR=0.2A, Irec=0.05A 26

28 3 1 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V FM I 3 RRM trr 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA981S6R 600 8(Tc=99) to (IF=8A) TO-220AB 2.0 YG981S6R 600 8(Tc=58) to (IF=8A) TO-220F 2.0 YA982S6R (Tc=99) to (IF=10A) TO-220AB 2.0 YG982S6R (Tc=60) to (IF=10A) TO-220F 2.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms 3 V R=V RRM 4 IF=0.1A, IR=0.2A, Irec=0.05A 4 IF=0.1A, IR=0.2A, Irec=0.05A 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V FM I 3 RRM trr 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA982C6R (Tc=88) to (IF=8A) TO-220AB 2.0 TS982C6R SMD (Tc=88) to (IF=8A) T-pack(S) 1.6 YG982C6R (Tc=68) to (IF=8A) TO-220F 2.0 YA985C6R (Tc=86) to (IF=10A) TO-220AB 2.0 TS985C6R SMD (Tc=86) to (IF=10A) T-pack(S) 1.6 YG985C6R (Tc=60) to (IF=10A) TO-220F 2.0 PA985C6R (Tc=73) to (IF=10A) TO-3P 5.5 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 V R=V RRM 2 Sine wave, 10ms per element 3 V R=V RRM per element 4 IF=0.1A, IR=0.2A, Irec=0.05A 4 IF=0.1A, IR=0.2A, Irec=0.05A 27

29 3 1 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM trr 5 Rth (j-c) mass Volts Amps. Amps. Max. Volts MaxA sec /W Grams ERA (Ta=60) to Lead ERA (Ta=25) to Lead SC902-2 SMD (Ta=25) to SC 0.06 ERB (Ta=50) to Lead ERB (Ta=40) to Lead ERC (Ta=25) to Lead SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM trr 5 Rth (j-c) mass Volts Amps. Amps. Max. Volts MaxA sec /W Grams KP926S (Tc=106) to K-pack(P) 0.6 KS926S2 SMD (Tc=106) to K-pack(S) 0.6 YG911S2R (Tc=134) to TO-220F 2.0 YG912S2R (Tc=116) to TO-220F 2.0 YG911S3R (Tc=128) to TO-220F 2.0 YG912S6R (Tc=93) to TO-220F 2.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty 1/2 2 10ms. 3 IF=Io 4 V R=V 2 RRM Sine wave, 10ms 3 IF=Io V R=V RRM 5 IF=0.1A. IR=0.2A. Irec=0.05A 5 IF=0.1A. IR=0.2A. Irec=0.05A 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating CharacteristicsTa=25 Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM trr 5 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams KP923C (Tc=103) to K-pack(P) 0.6 KS923C2 SMD 200 5(Tc=103) to K-pack(S) 0.6 YG901C2R 200 5(Tc=120) to TO-220F 2.0 YG902C2R (Tc=115) to TO-220F 2.0 YG906C2R (Tc=102) to TO-220F 2.0 MS906C2 SMD (Tc=105) to TFP 0.8 YG901C3R 300 5(Tc=105) to TO-220F 2.0 YG902C3R (Tc=101) to TO-220F 2.0 MS906C3 SMD (Tc=95) to TFP 0.8 PA905C6R (Tc=106) to TO-3P 5.5 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 IF=0.5Io1 2 Sine wave, 10ms per element 3 IF=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 5 IF=0.1A, IR=0.2A, Irec=0.05A IF=0.1A, IR=0.2A, Irec=0.05A 28

30 3 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating CharacteristicsTa=25 Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM trr 5 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YG982C3R (Tc=112) to TO-220F 2.0 YA982C3R (Tc=128) to TO-220AB 2.0 TS982C3R SMD (Tc=128) to T-pack(S) 1.6 YG985C3R (Tc=105) to TO-220F 2.0 YA985C3R (Tc=118) to TO-220AB 2.0 TS985C3R SMD (Tc=118) to T-pack(S) 1.6 MS985C3 SMD (Tc=118) to TFP 0.8 PG985C3R (Tc=73) to TO-3PF 6.0 YG982C4R (Tc=107) to TO-220F 2.0 YA982C4R (Tc=125) to TO-220AB 2.0 TS982C4R SMD (Tc=125) to T-pack(S) 1.6 YG985C4R (Tc=100) to TO-220F 2.0 YA985C4R (Tc=114) to TO-220AB 2.0 TS985C4R SMD (Tc=114) to T-pack(S) 1.6 MS985C4 SMD (Tc=114) to TFP 0.8 PG985C4R (Tc=64) to TO-3PF 6.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 IF=0.5Io1 2 Sine wave, 10ms per element 3 IF=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 5 IF=0.1A, IR=0.2A, Irec=0.05A IF=0.1A, IR=0.2A, Irec=0.05A 29

31 3 1 in one-package/2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I O 1 I FSM 2 Tj and Tstg V FM 3 I RRM 4 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A /W Grams ERC80-004R (Tc=122) to (IF=5.0A) TO-220AB 2.0 PA886C02R 20 30(Tc=105) to (IF=12.5A) TO-3P 5.5 ESAB82-004R 40 5(Tc=126) to (IF=2.0A) TO-220AB 2.0 TP802C04R 40 10(Tc=116) to (IF=4.0A) T-pack(P) 1.6 TP802C04RF (Tc=116) to (IF=4.0A) T-pack(P) 1.6 TS802C04R SMD 40 10(Tc=116) to (IF=4.0A) T-pack(S) 1.6 ESAC82-004R 40 10(Tc=116) to (IF=4.0A) TO-220AB 2.0 TS805C04R SMD 40 20(Tc=110) to (IF=10A) T-pack(S) 1.6 ESAC83-004R 40 20(Tc=119) to (IF=8.0A) TO-3P 5.5 ESAD83M-004RR 40 30(Tc=105) to (IF=12.5A) TO-3PF 6.0 ESAD83-004R 40 30(Tc=118) to (IF=12.5A) TO-3P 5.5 ESAC63-004R 45 20(Tc=109) to (IF=10A) TO-220AB 2.0 ESAC83M-006RR (Tc=108) to (IF=8.0A) TO-3PF 6.0 ESAC63-006R 60 20(Tc=118) to (IF=8.0A) TO-220AB 2.0 ESAD83M-006RR 60 30(Tc=106) to (IF=12.5A) TO-3PF 6.0 TS808C06R SMD 60 30(Tc=115) to (IF=12.5A) T-pack(S) 1.6 ESAD83-006R 60 30(Tc=119) to (IF=12.5A) TO-3P 5.5 TS802C09R SMD 90 10(Tc=109) to (IF=4.0A) T-pack(S) 1.6 ESAC85-009R 90 10(Tc=109) to (IF=4.0A) TO-220AB 2.0 ESAD85M-009RR 90 25(Tc=105) to (IF=10A) TO-3PF 6.0 ESAD85-009R 90 25(Tc=118) to (IF=10A) TO-3P 5.5 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms Sine wave, 10ms per element 3 per element 4 V R=V RRM 1 5 V R=V RRM per element 5 1 in one-package 2 in one-package SMD Ta=25 Device type Maximum rating Thermal rating CharacteristicsTa=25 Package Net V RRM I 1 O I 2 FSM Tj and Tstg V 3 FM I 4 RRM trr 5 Rth (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams ESAB92-02R 200 5(Tc=120) to (IF=2.5A) TO-220AB 2.0 TP901C2RF (Tc=120) to (IF=2.5A) T-pack(P) 1.6 TP902C2R (Tc=125) to (IF=5A) T-pack(P) 1.6 TP902C2RHD (Tc=125) to (IF=5A) T-pack(P) 1.6 TS902C2R SMD (Tc=125) to (IF=5A) T-pack(S) 1.6 ESAC92-02R (Tc=125) to (IF=5A) TO-220AB 2.0 ESAC93-02R (Tc=123) to (IF=6A) TO-3P 5.5 ESAD92M-02RR (Tc=108) to (IF=10A) TO-3PF 6.0 TP906C2RHD (Tc=110) to (IF=10A) T-pack(P) 1.6 TS906C2R SMD (Tc=110) to (IF=10A) T-pack(S) 1.6 ESAD92-02R (Tc=115) to (IF=10A) TO-3P 5.5 TP902C3RHD (Tc=115) to (IF=5A) T-pack(P) 1.6 TS902C3R SMD (Tc=115) to (IF=5A) T-pack(S) 1.6 ESAD92-03R (Tc=110) to (IF=10A) TO-3P 5.5 ESAD92M-03RR (Tc=96) to (IF=10A) TO-3PF 6.0 PA905C4R (Tc=107) to (IF=10A) TO-3P 5.5 PG905C4RR (Tc=93) to (IF=10A) TO-3PF 6.0 YG912S6RR (Tc=93) to (IF=10A) TO220F PA905C6RR (Tc=106) to (IF=10A) TO-3P 5.5 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms Sine wave, 10ms per element 3 per element 4 V R=V RRM 1 V R=V RRM per element IF=0.1A, IR=0.2A, Irec.=0.05A IF=0.1A, IR=0.2A, Irec.=0.05A 30

32 /Integrated Circuits 4 Device type Specifi cations Package Block diagram FA5526P/N FA5527P/N FA5528P/N FA5536P/N FA5537P/N FA5538P/N Switching power supply control Current mode PWM-controller Internal start-up circuit with 500V rating Reducing Switching frequency function at light load for Power Saving Over-Voltage Protection by VCC pin : Latch shut-out(fa5526/27/28), Auto recovery(fa5536/37/38) Overload protection : Latch shut-out(fa5526/27/28), Auto recovery(fa5536/37/38) Applications: AC adapter, FPD, general power supply FB (2) CS (1) 5V reg VCC Latch 11µA/4µA 5V ENB 1.3mA OVP off UVLO 8.5V/7.9V START 28V UVLO 4.0V/3.5V 0.68V 30V 2.9V Buf 4.8V 7.4k x1 3R R 15V/9V ENB OverLoad OSC Blanking VCO Q 1 shot OUT 1Meg T TRG Q PUT 5pF CLR S Q 0.28V SLOPE R Q 60k GENERATOR F.F. - IS comp. 20k 0.52V IS (3) VH (8) VCC (6) OUT (5) GND (4) FA5553P/N FA5554P/N FA5566P/N FA5567P/N Switching power supply control FA5546P/N FA5547P/N Switching power supply control Current mode PWM-controller Internal start-up circuit with 500V rating Current sense polarity : Minus voltage suitable for power saving Reducing Switching frequency function at light load for Power Saving Overload protection: Latch shut-out(fa5554/67) Auto recovery(fa5553/66) Latch pin suitable for Over Temperature Protection etc. Application: AC adapter,fpd,general power supply Current mode PWM-controller Internal start-up circuit with 500V rating Current sense polarity : Minus voltage suitable for power saving Brown-In/Out Protection 2 Stages Over Power Protection: Latch(FA5547),Auto-Recovery(FA5546) Reducing Switching frequency function at light load for Power Saving Latch pin suitable for Over Temperature Protection etc. Application: Printer, AC adapter, General power supply FA5553P/N FA5546P/N 31

33 4 /Integrated Circuits Device type Specifi cations Package Block diagram FA5531P/N Switching power supply control DIPSOP Quasi-resonant mode controller Internal start-up circuit with 500V rating Low-power CMOS process Operating current: 1.7mA typical Reducing oscillation frequency function at light load Applications: Printer, FPD, DVD, general power supply FA5541P/N FA5542P/N Switching power supply control Quasi-resonant mode controller Internal start-up circuit with 500V rating Low-power CMOS process Operating current: 1.2mA typical Intermittent Switching mode operation at light load Application: Printer, FPD, DVD, general power supply ZCD IS FB Valley detection Time out (5.6µs) 5V Reset Max. fsw Blanking 120kHz 50uA 5V Disable V 1/2 1V Overload 3.3V Current comparator Soft start (1ms) FA5542P/N 1 shot Start up (380ns) management Start up Logic Current CLR 12.4V/10.2V UVLO 5V Reg. 5V Reg. Check 10.2V/9V Internal supply Driver S Q ZCD R OVP 2 7.2V Timer Timer latch VCC (54µs) 200ms OVP 1 Reset 28V VH VCC OUT GND FA5500AP/N FA5501AP/N Power-factor correction Wide range of operating temperature Critical conduction current mode Low-power CMOS process Start-up current: 20µA maximum Operating current: 2mA typical Good regulation to no load FB pin open/short protection function Application:Electronic ramp ballast, AC adapter General power supply 32

34 /Integrated Circuits 4 Device type Specifi cations Package Block diagram FA5502P/M Power-factor correction Average current control system Low-power CMOS process Start-up current : 30µA maximum Operating current : 4mA typical Many kinds of protection function Operating frequency: 15kHz to 150kHz Application: Power factor correction FA5550P/N FA5551P/N Power-factor correction Average current control system Low-power CMOS process Start-up current : 80µA maximum Operating current : 2mA typical FB pin open/short protection function Many kinds of protection function Operating frequency: 65kHz FB 1 COMP 2 GND 6 MUL 3 VREF(2.5V) VREF(2.5V) VDD(5.0V) VOVP(1.09VREF) REF ERRAMP MUL VOS(2.0V) - VBO(2.1V/1.5V) VOS(2.0V) AOC - VSP(0.3V) - SP OSC VOVP(1.09VREF) OVP SLOPE IS SLOPE - R Q S Brownout VCC 8 UVLO SP OVP 7 OUT FA3641P/N DIP-8SOP-8 Switching power supply control PWM-type switching power supply control Low-power CMOS process Reducing oscillation frequency function at light load Many kinds of protection function Operating frequency: 500kHz maximum Applications: Printer, FAX, AC adapter, PPC General power supply FA3647P/N DIP-8SOP-8 Switching power supply control PWM-type switching power supply control Low-power CMOS process Reducing oscillation frequency function at light load Many kinds of protection function Operating frequency: 500kHz maximum Applications: Printer, FAX, AC adapter, PPC General power supply 33

35 4 /Integrated Circuits Device type Specifi cations Package Block diagram FA5510P/N FA5511P/N Switching power supply control PWM-type switching power supply control Low-power CMOS process Many kinds of protection function Maximum output duty cycle: 46% or 70% (typ.) Operating frequency: 500kHz maximum Applications: Printer, FAX, AC adapter, PPC General power supply FA5514P/N FA5515P/N Switching power supply control PWM-type switching power supply control Low-power CMOS process Many kinds of protection function Maximum output duty cycle: 46% or 70% (typ.) Operating frequency: 500kHz maximum Applications: Printer, FAX, AC adapter, PPC General power supply FA13842P/N FA13843P/N Switching power supply control Current mode PWM-controller Low-power CMOS process Start-up current: typical Operating current: 3mA typical Pin-for-pin compatible with 384X DIP-8SOP-8 Applications: Personal computer, Display, AC-adapter FA13844P/N FA13845P/N Switching power supply control Current mode PWM-controller Low-power CMOS process Start-up current: typical Operating current: 3mA typical Pin-for-pin compatible with 384X DIP-8SOP-8 Applications: Personal computer, Display, DC-DC converter 34

36 /Integrated Circuits 4 Device type Specifi cations Package Block diagram FB6861J Switching power supply control Small outline package (2.4mm 2.4mm, h=1.1mm max.) with embedded inductor 300mA output PFM-type buck converter Fixed output voltage : 1.0V,1.2V,1.5V,1.8V Operating frequency: 2.1MHz typical Over current protection function Thermal shut down Vin Cin 10uF CE Soft Start RFB0 RFB1 Error AMP. VREF GND VDD UVLO Thermal Shut Down PFM Controller Over Current Protection Driver Driver PVDD PMOS Inductor NMOS PGND OUT FB Vout Cout 10uF Applications: Mobile equipment FB6871J Switching power supply control Small outline package (2.4mm 2.4mm, h=1.1mm max.) with embedded inductor 5V 100mA output PWM-type boost converter Operating frequency: 2.1MHz typical Timer latch short circuit protection function Thermal shut down VDD Vin CIN CE IN FB UVLO Control Logic Soft Start TSD Timer Latch EA - PWM controller Pc Driver Nc Driver GND OUT COUT SENSE PGND Vout Applications: Mobile equipment Device type Specifi cations Package Block diagram FA396X Protection Protects the battery from overcharge,overdischarge,and overcurrent. Built-in Trench power MOSFET 2.4mm 2 Industry Smallest Applications: Battery Pack for Cellular phone, Digitai still camera, etc. Li-ion BATT Lithium-ion Battery Pack VCC Power Supply CTL - Over Charge detect - 1V Over Discharge detect OSC TESTMD Control Circuit OC detect1 - OC detect2-1v - CHG_OC detect DCHG _SW2 DCHG _SW1 Level Shift CHG_SW CS PAC S1 S2 PAC- 35

37 4 /Integrated Circuits Device type Specifi cations Package Block diagram FA7700V TSSOP-8 Switching power supply control PWM-type switching power supply control Timer latch short-circuit protection function Maximum output duty: 80% minimum Operating frequency: 1MHz maximum Applications: VTR-camera, Digital-still-camera Portable equipment RT REF IN FB VREF 2.2V VREF BIAS Power Good Signal 0.88V ER.AMP OSC UVLO 0.3V 5.5V 1.5V S.C.DET 1.5V OFF ON/OFF PWM ON/OFF S.C.P 2.2V CS VCC OUT GND FA7701V TSSOP-8 Switching power supply control PWM-type switching power supply control Timer latch short-circuit protection function Maximum output duty-cycle: 100% minimum Operating frequency: 1MHz maximum Applications: VTR-camera, Digital-still-camera Portable equipment RT REF IN FB VREF 2.2V VREF BIAS Power Good Signal 0.88V ER.AMP OSC UVLO 1.5V PWM ON/OFF 1.5V S.C.DET OFF 0.3V ON/OFF S.C.P 2.2V 5.5V CS VCC OUT GND FA7738P/N Switching power supply control EpadSOP 1-ch PWM-type switching power supply control Built-in power MOSFET Operating frequency: 400kHz maximum Applications: FPD, AV-equipment, general DC/DC converter 36

38 /Integrated Circuits 4 Device type Specifi cations Package Block diagram FA7743N Switching power supply control (Under Development) PWM-type switching power supply control Built-in power MOSFET Timer latch short-circuit protection function Maximum output duty: 90% typical Operating frequency: 500MHz typical Applications: Flat Panel TV, Printer,AV-equipment Industrial equipment, POL FA7749V Switching power supply control (Under Development) PWM-type switching power supply control Built-in power MOSFET Over current protection function Maximum output duty: 90% typical Operating frequency: 500kHz typical CP IN SS Soft Start 0.8V Thermal Shutdown Timer Latch Short Circuit Protection OSC - - CE Cip enable VCC VREG UVLO UVLO Dead time 5V 0.8V VREG VREF Current detect Driver Driver VCC VREG PVCC BOOT OUT Applications: Flat Panel TV, Printer,AV-equipment Industrial equipment, POL GND PGND 37

39 4 /Integrated Circuits Device type Specifi cations Package Block diagram FA3686V Switching power supply control 2-ch PWM-type switching power supply control for Boost and Inverting Series regulator control Timer latch short circuit protection function Operating frequency: 1.5MHz maximum Applications: LCD Bias, CCD, Portable equipment FA3687V Switching power supply control 2-ch PWM-type switching power supply control Timer latch short circuit protection function Operating frequency: 1.5MHz maximum Inverted phase operation Applications: General purpose, Portable equipment FA7703V FA7704V TSSOP-16 Switching power supply control 2-ch PWM-type switching power supply control Timer latch short circuit protection function Operating frequency: 1MHz maximum Applications: VTR-camera, Digital-still-camera Portable equipment FA7707E REF 20 CP SYNC ON/OFF1 IN1 FB1 DT1 OCL1 VCC OUT1 11 Switching power supply control 2-ch PWM-type switching power supply control Timer latch short circuit protection function Over current protection Operating frequency: 500kHz maximum Shyncronous operating frequency 2.28V 0.8V 2µ BIAS UVLO BIAS ON/ OFF OSC 2.28V 0.42V - S.C.DET 2.28V - PWM S.C.P 1.27V ON/ OFF - PWM 2 Applications: VTR-camera, Digital-still-camera Portable equipment 1 CT RT ON/OFF2I N2 IN2- FB2 DT2 OCL2 GND 10 OUT2 38

40 /Integrated Circuits 4 Device type Specifi cations Package Block diagram FA7715J ON/OFF1 REF CP IN1- FB1 CS1 VCC OUT k 1.4V 0.5V 1 1.6µ Dmax 1.6µ 1.4V - PWM 1 Switching power supply control 2-ch PWM-type switching power supply control 2 Dry cell operation Operating frequency: 1MHz maximum Applications: Mobile equipment UVLO 70k ON/OFF OSC 0.5V BIAS BIAS 2 1.4V 1V Dmax S.C.DET -- S.C.P 0.6V/0.2V PWM 2-1.6µ 1.4V 60k 60k SW ON/OFF2 RT IN2- FB2 CS2 OUT2 GND SEL SEL=0V SW FA7711V Switching power supply control TSSOP 3ch PWM-type switching power supply control Timer latch short-circuit protection function Operating frequency: 800kHz maximum Applications: LCD-panel, FPD, general DC/DC converter FA7729R Switching power supply control VQFN 6-ch PWM-type switching power supply control Operating frequency: 800kHz maximum Applications: Camcorder, digital-still-camera Surveillance camera, Projector, Portable equipment 39

41 4 /Integrated Circuits Device type Specifi cations Package Block diagram FA7726F FA7730F EpadTQFP EpadTQFP Switching power supply control 2 3-ch synchronous rectifi cation (FA7730: 2ch) Built-in power MOSFET Operating frequency: 200kHz maximum Applications: Printer, FAX, IP-phone FA7735F Switching power supply control EpadTQFP 2-ch synchronous rectifi cation Built-in power MOSFET Operating frequency: 400kHz maximum Applications: Digital-tuner, FPD, AV-equipment 40

42 5 Direct mounting type Features Absolute pressure measurement High accuracy with digital trimming Wide pressure range, full scale of 100kPa to 300kPa Provided with overvoltage protection circuit, EMC fi lter, and surge protective device in the sensor chip Surge protection conforms to ISO7637-level 4 for automatic components Diagnostic self-detecting function in the event of a wire opened among Vcc, Vout and GND terminals High reliability ensured by EPROM bit redundancy Max. overvolatge Max. operating pressure Operating voltage Output voltage Operating current Sink current Source current Operating temperature Storage temperature Pressure error 20 to 80% 0 to 100% Temperature error 0 to 85 Top Supply voltage error 5V 5% Vmax Pop Vcc Vout Icc Isink Isource Top TstrL TstrU Vper1 Vper2 Vter1 Vter2 Vver 16.5V 100, 200, 300kPa 5V to 4.5V 10mA max. 1mA 0.1mA -40 to %FS max. 2.0%FS max. 1.5%FS max. 2.0%FS max. 1%FS max. Example of output characteristic Reserved for diagnositics OutputV Reserved for diagnositics PressurekPa Dimensions, mm Printed board mounting type Direct mounting type 41