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1 FUJI SEMICONDUCTORS 25A2-W-0001d

2 Fuji Electric Power Semiconductors contibuting Energy Management in various fields Fuji Electric provides Power Semiconductors enabling high-efficiency energy usage in various fields such as industrial machinery,automobile, railroad, social infrastructure, renewable energy, consumer electronics and information equipment in order to achieve low-carbon society. Fuji Electric contributes to realization of safe and secure sustainable society through continuous technology inovation and product development of Power Semiconductors as key devices in Power Electronics technology. The pictures on this page show examples of various applications which may use Fuji Electric Power Semiconductors, they aren t necessarily used in the products in these pictures.

3 01 Power Devices (IGBT) 02 SiC Devices 03 Integrated Circuits 04 Power MOSFETs 05 Rectifier Diodes 06 Pressure Sensors INDEX

4 Fuji Electric provides Power Semiconductors well suited for various applications. You will find more information on products for each application shown below at our Web site. Semiconductor products best suited for general-purpose inverters that carry out variable-speed operation of motors in products such as belt conveyors, fans and pumps Semiconductor products suitable for medium-voltage inverters that drive 3-phase AC 3k/6k/6.6kV high-voltage motors used in iron and steel plants, textile plants and paper mills Semiconductor products best suited to NC and servos that carry out speed control and positioning of machine tools, as well as robots that have multi-spindle control features used in assembly, welding and conveyance Semiconductor products suited for the power electronics of railroad cars such as the main motor drive and auxiliary power supply equipment of rolling stock Semiconductor products suitable for AC/DC converters that convert the AC power output from wind turbine generators to DC power, as well as for inverters that convert DC power to the AC power of commercial frequencies Semiconductor products best suited for power conditioners that convert solar-panel generated DC power into AC power to enable the residential consumption, as well as to facilitate the recovery of the power to the power systems of power companies Semiconductor products suitable for switching circuits that generate resistance heat in welding machines to melt and integrate by adding heat or pressure to two or more metallic members Semiconductor products ideal for the power conversion circuits of UPS (uninterruptible power supply) that prevent system shutdown during power outages and instantaneous power failures Semiconductor products best suited for general-purpose switching power supplies used in a wide variety of applications such as equipment for general consumers and OA and communication devices Semiconductor products suitable for the power supplies of increasingly high-performance desktop PCs and servers, as well as of increasingly compact and lightweight notebook PCs Semiconductor products ideal for the power supplies of TV sets that require low power consumption and large screens that are increasingly thinner and more lightweight IGBT modules, power ICs, MOSFETs and pressure sensors as semiconductor products for automobiles developed with the theme "Car Electronics Solutions - Contributing to the Environment, Safety and Comfort"

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6 Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variablespeed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the highspeed switching performance of a power MOSFET with the highvoltage/high-current handling capabilities of a bipolar transistor. The IGBT and diode devices of Fuji electric s 7th-generation X series that constitute these modules have been made thinner and miniaturized, thereby optimizing the device structure. This has successfully reduced power dissipation in inverter operation compared with conventional products (Fuji Electric's 6thgeneration V Series), contributing to energy saving and power cost reduction of the equipment on which the module is installed. to improve the module s heat dissipation. Combined with the feature described above (reduced power dissipation) to suppress 1 reduction has been achieved in comparison to the conventional module. In addition, the maximum temperature guaranteed in continuous operation has been increased from the conventional 150 C to 175 C, which allows 2 while maintaining the size of the equipment on which the module is installed. This contributes to reducing the size and total cost of the equipment. Number of IGBT Switches Products Category Page Standard Module Max V CE Rated Current IGBT Module Power Integrated Module Intelligent Power Module Newly developed structures and materials of the module have realized to increase its stability and durability in high-temperature operation. This contributes to improving the stability and reliability of the equipment on which the module is installed. Discrete IGBT 650V 1200V 1700V

7 PIM & 6-pack Products Map Ic (A) 600 XNA XNA Power Integrated Module 7MBR Ic IGBT series & Package type Vces XKA, XKC mm 450 XKB, XKD mm XM, XP, XW, XY mm XN, XR, XX, XZ mm XY XP XXA XNA XZA XRA XZ XX XR XN XX XB 6-pack 6MBI Ic IGBT series & Package type XB, XX XNA Vces mm 162mm 75 XWA XMA XY XW XP XM PIM XKC XKA XKD XKB 6-pack XKC XKA XKD XKB 650V 1200V 1700V 2-pack Products Map Ic (A) 2-pack 2MBI Ic IGBT series Vces & Package type 1800 XXF XXB XXF XXB XAA XBE XDE XEE XHA mm mm mm Standard Pack mm mm XXE XXA XXE XXA XN mm XXA, XXE mm PrimePACK XXB, XXF mm PrimePACK Infineon Technologies PrimePACK is registered trademark of Infineon Technologies AG, Germany XN XDE XEE XDE XHA XEE XEE XN XBE XAA XHE XBE XAA XAA 650V 1200V 1700V

8 VCES: Collector-to-emitter rated voltage (Gate-to-emitter short-circuited) VGES: Gate-to-emitter rated voltage (Collector-to-emitter short-circuited) IC: Rated collector current PC: Maximum power dissipation VCE(sat ): Collector-to-emitter saturation voltage ton: Turn-on time toff: Turn-off time tf: Fall time td(on): Turn-on time td(off): Turn-off time

9 650V 1200V 12 Ic X series X series Thermistor Thermistor Solder pins Thermistor 12 Solder pins Thermistor Dimension [mm] Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams New products VCE(sat), VFM : at Tj=25, Chip

10 Solder pins 650V 1200V Ic X series X series Thermistor P P1 R S T B U V W 45 Solder pins 62 Solder pins 45 Solder pins M719 N N1 Power Flow INV REC W R S T U V INPUT OUTPUT M720 Thermistor P P1 R S T B U V W M719 N N1 INPUT S T M720 R Power Flow REC INV OUTPUT U V W Dimension [mm] Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M M M720 New products VCEVFM

11 650V 1200V Ic X series X series Thermistor P P1 R S T B U V W M721 M722 M721 M722 N N1 R S T B INPUT S T Power Flow REC INV W R S T U V INPUT OUTPUT P P1 N N1 REC R Power Flow Thermistor INV OUTPUT U V W U V W Dimension [mm] Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M M M722 Under development VCEVFM

12 Solder pins M668 M648 P N P N Thermistor U V W Thermistor U V W Ic 1200V X series Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD TBD M ± TBD TBD TBD M ±20 TBD TBD TBD TBD M ±20 TBD TBD TBD TBD M ± TBD TBD TBD M ± TBD TBD TBD M ±20 TBD TBD TBD TBD M ±20 TBD TBD TBD TBD M648 New products VCE(sat): at Tj=25, Chip 6MBI200XBE MBI200XXE MBI200XBE MBI200XXE120-50; Premium type (Low Thermal Impedance Version)

13 1200V 1700V Ic X series X series Thermistor T1 T2 U+ V+ W+ C5 C3 C M629 G5 G3 G1 E5 U1 E3 V1 E1 W1 U2 V2 W2 G6 G4 G2 E6 E4 E2 U- V- W- Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD 225 TBD TBD TBD M629 TBD 1200 ±20 TBD TBD TBD TBD TBD M629 TBD 1200 ± TBD TBD 450 TBD TBD TBD M629 TBD 1200 ± TBD TBD 600 TBD TBD TBD M629 TBD 1700 ± TBD TBD 225 TBD TBD TBD M629 TBD 1700 ±20 TBD TBD TBD TBD TBD M629 TBD 1700 ± TBD TBD 450 TBD TBD TBD M629 TBD 1700 ± TBD TBD 600 TBD TBD TBD M629 TBD Under development VCE(sat): at Tj=25, Chip

14 M V 1200V 1700V Ic X series X series X series M M276 M277 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 650 ± TBD TBD 150 TBD TBD TBD TBD 650 ± TBD TBD 200 TBD TBD TBD TBD 650 ±20 TBD TBD TBD TBD TBD M274 TBD 650 ± TBD TBD 400 TBD TBD TBD M274 TBD 650 ± TBD TBD 400 TBD TBD TBD M275 TBD 650 ± TBD TBD 600 TBD TBD TBD M275 TBD 650 ± TBD TBD 600 TBD TBD TBD M277 TBD 1200 ± TBD TBD 100 TBD TBD TBD TBD 1200 ± TBD TBD 150 TBD TBD TBD TBD 1200 ± TBD TBD 200 TBD TBD TBD TBD 1200 ± TBD TBD 200 TBD TBD TBD M274 TBD 1200 ±20 TBD TBD TBD TBD TBD M274 TBD 1200 ± TBD TBD 400 TBD TBD TBD M275 TBD 1200 ± TBD TBD 600 TBD TBD TBD M275 TBD 1200 ±20 TBD TBD TBD TBD TBD M276 TBD 1200 ± TBD TBD 450 TBD TBD TBD M276 TBD 1200 ± TBD TBD 600 TBD TBD TBD M276 TBD 1200 ± TBD TBD 450 TBD TBD TBD M277 TBD 1200 ± TBD TBD 600 TBD TBD TBD M277 TBD 1700 ±20 75 TBD TBD 75 TBD TBD TBD TBD 1700 ± TBD TBD 100 TBD TBD TBD TBD 1700 ± TBD TBD 150 TBD TBD TBD TBD 1700 ± TBD TBD 150 TBD TBD TBD M276 TBD 1700 ± TBD TBD 200 TBD TBD TBD M276 TBD 1700 ±20 TBD TBD TBD TBD TBD M276 TBD 1700 ± TBD TBD 400 TBD TBD TBD M276 TBD 1700 ±20 TBD TBD TBD TBD TBD M277 TBD 1700 ± TBD TBD 400 TBD TBD TBD M277 TBD 1700 ± TBD TBD 600 TBD TBD TBD M277 TBD Under development

15 Solder pins 1200V 1700V Ic X series X series Thermistor M254, M285 Thermistor M282, M286 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M ± TBD TBD 800 TBD TBD TBD M ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M ± TBD TBD 800 TBD TBD TBD M ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M286 Under development VCE(sat): at Tj=25 C, Chip

16 M271 Inverter Thermistor 1200V 1700V X series X series Ic Low switching loss Soft turn off Low switching loss Soft turn off Inverter Thermistor M272 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD 900 TBD TBD TBD M ± TBD TBD 900 TBD TBD TBD M ± TBD TBD 1200 TBD TBD TBD M ± TBD TBD 1200 TBD TBD TBD M ± TBD TBD 1400 TBD TBD TBD M ± TBD TBD 1800 TBD TBD TBD M ± TBD TBD 650 TBD TBD TBD M ± TBD TBD 1200 TBD TBD TBD M ± TBD TBD 1000 TBD TBD TBD M ± TBD TBD 1400 TBD TBD TBD M ± TBD TBD 1800 TBD TBD TBD M Under development VCE(sat): at Tj=25 C, Chip

17 Built-in protection functions P-side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (External current detection and shutdown) Overheating protection (self shutdown) Temperature sensor output (Vtemp, out) Small IPM with High Voltage Driver-IC Ic 600V X series Dimension [mm] Inverter Control Device type V CES I C V CE(sat) V CCL Boot- Input signal Protection function Net Cont. V CCH strap UV OC Vtemp TOH mass VB Diode and Voltage V CCL VFO fault output Typ. Typ. level V CCH Volts Volts Volts VB Grams Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) New Products 1 1 External current ditection 2 LVIC 2 Temperature detection in LVIC High side bias voltage for IGBT driving VB(U) VB(V) VB(W) Power supply V CCH High side IN(HU) PWM IN(HV) signal input IN(HW) GND COM High-side Drv. High-side Drv. High-side Drv. P U V W GND COM Power supply V CCL Low side IN(LU) PWM IN(LV) signal input IN(LW) Fault output VFO Temperature sensor output TEMP Low-side Drv. N(W) N(V) N(U) IS OC sensing voltage input

18 Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor. chipset Tj(max.)=175 C, Tj(op)=150 C Easy assemblage, solder free options RoHS compliant (Some parts are Non RoHS.) Improved noise-loss trade-off Reduced turn-on dv/dt, excellent turn-on dic/dt Soft switching behavior, turn-off oscillation free

19 PIM & 6-pack Products Map Ic (A) VB VY VP VZ VR VW VA VX VB VJC VZ VX VR VN VW VA VX VB V U4B V Power Integrated Module 7MBR Ic IGBT series & Package type VJA VJB VJC VKA, VKC VKB, VKD VA, VM, VP, VW, VY VB, VN, VR, VX, VZ 6-pack 6MBI Ic IGBT series & - Vces Package type - Vces mm mm mm mm mm mm mm VA, VW mm 75 VB VB, VX, U4B V mm 162 mm 50 VKD VKB VA VY VW VP VM VKC VKA PIM 6-pack VJA VKC VKA VKD VKB VJB VA 600V 1200V 1700V 1-pack / 2-pack Products Map Ic (A) VB VA pack VD VE VA VD VB VH VE VN VJ VX VC V VD VG 600V 1200V 1700V 3300V 2-pack VXB VXA V VA VH VE VR VC VN VS VD VT VG VX VXB VXA VJ UE UG 1-pack 1MBI Ic IGBT series & Package type - Vces V mm Standard Pack VC, VR, UG mm High Power VD, VS, UE mm Module 2-pack 2MBI Ic IGBT series & Package type VA VB VD VE VH VJ, VN, VX - Vces mm mm mm Standard Pack mm mm mm High Power VG, VT mm Module VXA mm PrimePACK VXB mm PrimePACK Infineon Technologies PrimePACK is registered trademark of Infineon Technologies AG, Germany

20 Intelligent Power Module Products Map Ic (A) 400 VEA 300 6/7MBP Ic IGBT series & - Vces Package type 7 in 1 6 in 1 VAA mm VBA mm VDA, VDN mm VEA mm VFN* mm Thermal impedance of VDN type is lower than VDA type. 200 VDA VDN VEA VFN VDA VDN 75 VBA 50 VAA VBA VFN VAA 0 600V 1200V VCES: Collector-to-emitter rated voltage (Gate-to-emitter short-circuited) VGES: Gate-to-emitter rated voltage (Collector-to-emitter short-circuited) IC: Rated collector current PC: Maximum power dissipation VCE(sat ): Collector-to-emitter saturation voltage ton: Turn-on time toff: Turn-off time tf: Fall time td(on): Turn-on time td(off): Turn-off time

21 600V 1200V 12 Ic V series V series Thermistor M726 Thermistor Solder pins Thermistor 12 M Solder pins Thermistor 12 M M729 Dimension [mm] Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M VCE(sat), VFM : at Tj=25, Chip

22 40 42 R S T P N Pb B Gb Nb P1 Gu U Gx Ex Gv V Gy Ey Gw W Gz Ez Temp. Sensor T1 T2 1200V Ic V series M724 R S T P N Pb B Gb Nb P1 Gu Eu U Gx N1 Gv Ev V Gy Gw Ew W Gz Temp. Sensor T1 T2 En M725 R S T P N Pb B Gb Eb Nb P1 Gu Eu U Gv Ev V Gw Ew W Gx GY Gz Ex N1 Ey Ez Temp. Sensor T1 T2 Dimension [mm] Inverter [IGBT] Converter [Diode] Device type V CES I C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M New Products VCE(sat), VFM: at Tj=25, Chip 1 2"-50"Standard LidSlim Lid

23 Solder pins 600V 1200V Thermistor Ic V series V series P P1 R S T B U V W 45 Solder pins Power Flow REC INV W R S T U V 62 Solder pins Thermistor P P1 Solder pins Power Flow REC INV W 62 Solder pins Thermistor P P1 R S T B U V W M719 N N1 Solder pins R INPUT S Power Flow T REC INV Dimension [mm] M711 M712 M719 M720 M720 N N1 INPUT R S T B N N1 OUTPUT U V W R S T U V INPUT OUTPUT OUTPUT U V W Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M M M M M M M M720 VCEVFM

24 600V 1200V Ic V series V series Thermistor P P R S T B U V W Power Flow INV REC W R S T U V 62 Thermistor R S T P P1 B U V W INPUT R S Power Flow T REC INV Dimension [mm] M721 M722 M721 M722 N N1 INPUT N N1 OUTPUT OUTPUT U V W Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M722 VCE(sat), VFM: at Tj=25, Chip

25 59 82 M664 P N [ Inverter ] Temp. Sensor T1 T2 U V W 1200V Ic V series Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M Under development VCE(sat): at Tj=25, Chip 1 26MBI150VJC MBI150VJC "-50/-55"Standard LidSlim Lid Note2: 6MBI150VJC , 6MBI150VJC ; Premium type (Low Thermal Impedance Version)

26 Solder pins Thermistor 600V 1200V 1700V Ic P V series V series V / U series U V W N Solder pins Thermistor P Thermistor P Thermistor P U V W M647 M648 N N N U V W U V W Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 600 ± ± ± ± ± M ± M ± M ± M ± ± ± ± ± ± ± ± M ± M ± M ± M ± M ± M ± M ± M ± ± VCE(sat): at Tj=25, Chip 6MBI180VB MBI180VX MBI180VB , 6MBI180VX ; Premium type (Low Thermal Impedance Version)

27 1200V 1700V Ic V series V series U+ Thermistor T1 V+ T2 W M629 C5 C3 C1 G5 G3 G1 E5 U1 E3 V1 E1 W1 U2 V2 W2 G6 G4 G2 E6 E4 E2 U- V- W- Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M VCE(sat): at Tj=25, Chip -80 : TIMThermal-Interface-Material

28 V 1200V 1700V Ic V series V series V series M M275 * 2MBI450VH-120F M276 M277 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 600 ± ± ± ± M ± M ± M ± M ± M ± ± ± ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± ± ± M ± M ± M ± M ± M VCE(sat): at Tj=25 C, Chip

29 Solder pins 1200V 1700V Ic V series V series Thermistor M254 Thermistor M282 Spring contacts Thermistor M260 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M260 : -80 : TIMThermal-Interface-Material VCE(sat): at Tj=25 C, Chip

30 140 Dimension [mm] 130 M256, M V 1700V V series V series Ic Cu-baseplate Cu-baseplate V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M VCE(sat): at Tj=25 C, Chip Switching time: at Tj=125 C

31 1200V 1700V V series V series Ic Low switching loss Soft turn off Low switching loss Soft turn off M271 Inverter Inverter Thermistor Thermistor 89 M272 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M VCE(sat)VF VF -54CE(sat) and VF. The products with F and thermal resistance.

32 1200V 1700V V series V series Ic Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± ± ± ± ± ± ± ± VCE(sat): at Tj=25 C, Chip

33 M151, M155 M152, M V 1700V V series V series U Series Ic Cu-baseplate Cu-baseplate Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M156 ± M ± M ± M ± M156 ± M156 ± M156 New Products VCE(sat): at Tj=25 C, Chip Switching time: at Tj=125 C, at Tj Low switching losses

34 600V 1200V M262 C1 Inverse Diode FWD NC G1 E1 E1C2 G2 E2 Inverse Diode E2 Ic U series U series V series FWD E2 NC G1 E1 E1C2 G2 E2 M259 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 600 ± M ± M ± M ± M ± M ± M ± M VCE(sat): at Tj=25 C, Chip

35 Chopper 1200V 1700V V series V series M271 Low Side Thermistor High Side Thermistor Ic Soft turn off Low side Soft turn off High side Low switching loss Low switching loss Chopper M272 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M New products VCE(sat): at Tj=25, Chip -54VCE(sat)VF -54CE(sat) and VF. Chopper 1200V 1700V Low Side High Side V series V series Thermistor Thermistor Ic Boost (Low side) Chopper Chopper Boost (Low side) Chopper Chopper M271 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M VCE(sat): at Tj=25, Chip -54VCE(sat)VF -54CE(sat) and VF.

36 Chopper 1200V Ic High Speed IGBT Thermistor M M M M276 Dimension [mm] V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± ± M ± M ± M ± M ± M ± M276 VCE(sat): at Tj=25 C, Chip

37 conversion efficiency. Lower power loss can be achieved by using RB-IGBT as for owest power loss can be achieved by using 6th Gen. IGBT 1-leg T-Type T3 T1 Ic T1, T2 600V 1200V 1700V 600V 600V 900V 1200V 1200V RB-IGBT T4 T2 2 1-leg T-Type T3 T M404 RB-IGBT T4 T2 1-leg I-Type T1 M404 T2 1-leg I-Type T3 T4 150 Dimension [mm] T1, T2 Device type V CES I C P C V CE(sat) (V GE=15V) V CES I C P C V CE(sat) (V GE=15V) Net mass Cont. Typ. I C Cont. Typ. I C Volts Volts Volts Volts Grams M M M M TBD TBD TBD TBD M M404 New Products, Under development VCE(sat): at Tj=25 C, Chip : VF Note: VF type is lower thermal impedance version. Particular for Inverter Particular for Converter

38 Ic T1, T2 1200V 600V P T3u T1u T3v T1v T3w T1w M T4u T2u U T4v T2v V T4w T2w W N P T3u T1u T3v T1v T3w T1w M T4u T2u U T4v T2v V T4w T2w W N M1202 Dimension [mm] T1, T2 Device type V CES I C P C V CE(sat) (V GE=15V) V CES I C P C V CE(sat) (V GE=15V) Net mass Cont. Typ. I C Cont. Typ. I C Volts Volts Volts Volts Grams M M M1202 VCE(sat): at Tj=25 C, Chip

39 Built-in protection functions P-side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (self shutdown) Overheating protection (self shutdown) 600V 1200V Ic V series V series P P Dimension [mm] Inverter Control Device type V CES I C V CE(sat) V CES I C V CC I OC[INV] V UV T joh Net Cont. Typ. Cont. Typ. Min. Min. OC(typ.) UV(typ.) T joh(typ.) mass Volts Volts Volts Volts Volts ms ms ms Grams to P to P to P to P to P to to to to to to to P to P to P to P to P to P to to to to to to

40 Built-in protection functions P-side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (self shutdown) Overheating protection (self shutdown) V 1200V Ic V series V series Dimension [mm] Alarm output U Alarm output V Alarm output W P Supply voltage VCCU Signal input VinU GND U Supply voltage VCCL VinX Signal input for low side VinY VinZ Alarm output ALM GND RALM Pre Driver VCCV VinV GND V Pre Driver Pre-Driver VCCW VinW GND W Tj-sensor IC-sensor Pre Driver U V W N P Supply voltage VCCL Alarm output ALM GND VCCU VinU GND U RALM VinX Pre Driver Pre Driver RALM RALM RALM VCCV VinV GND V VinY Pre Driver Pre Driver VCCW VinW GND W VinZ Pre Driver Pre Driver Tj-sensor U V W N IC-sensor P Supply voltage VCCL Alarm output ALM GND Alarm output U Alarm output V Alarm output W VCCU VinU GND U RALM VinX Pre Driver Pre Driver RALM RALM RALM VCCV VinV GND V VinY Pre Driver Pre Driver VCCW VinW GND W VinZ Pre Driver Pre Driver Tj-sensor U V W N IC-sensor P B Supply voltage VCCL Alarm output ALM Signal input VinB GND RALM Alarm output U Alarm output V Alarm output W RALM RALM RALM VCCU VinU GND U VinX Pre Driver Pre Driver VCCV VinV GND V VinY Pre Driver Pre Driver VCCW VinW GND W Pre Driver U V W Pre VinZ Driver N Tj-sensor IC-sensor

41 Inverter Control Device type V CES I C V CE(sat) V CES I C V CC I OC[INV] V UV T joh Net Cont. Typ. Cont. Typ. Min. Min. OC(typ.) UV(typ.) T joh(typ.) mass Volts Volts Volts Volts Volts ms ms ms Grams to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to VDN NoteThe products with VDNon this page have high heat dissipation characteristics.

42 V CES (V) I C Trench-FS RB-IGBT TO-247-P2 600/ ~ ~10 ~20 ~40 ~50 ~60 ~70 ~80 ~90 ~100 Part numbers Company Device code Current Polarity Voltage Series Diode Type Equivalent circuit

43 650V,1200V650,1200 volts class Maximum Ratings V CE(sat) E on E off Q G V F Qrr Device type V CES I C I CP P D (V GE=15V) (r g=10) I F Net Tc=100C IGBT Typ. typ. typ. typ. Tc=100C typ. mass Volts Volts mj mj nc Volts Grams TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P2 6.0 New Products, Under development

44 600V600 volts class Maximum Ratings V CE(sat) E on E off Q G V F Qrr Device type V CES I C I CP P D (V GE=15V) (r g=10) Net Tc=100C IGBT Typ. typ. typ. typ. I F typ. mass Volts Volts mj mj nc Volts Grams TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P V1200 volts class Maximum Ratings V CE(sat) E on E off Q G V F Qrr Device type V CES I C I CP P D (V GE=15V) (r g=10) Net Tc=100C IGBT Typ. typ. typ. typ. I F typ. mass Volts Volts mj mj nc Volts Grams TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P2 6.0 Maximum Ratings V CE(sat) E on E off Q G t rr Device type V CES I C I CP tsc P D (V GE=15V) (r g=10) Net Tc=100C IGBT Typ. typ. typ. typ. mass Volts μsec. Volts mj mj nc n sec Grams TO-247-P2 6.0

45 Including circuit board whitch has IGBT drive and protection fanction Optical isolated (signal input, IGBT s temperature monitor, alarm output) Detection and protection (short-circuit, over-temperature, under-voltage) (Tj=25 C) V CES I C(Cont) V CE(sat) V F Device type Volts Typ. Volts Typ. Volts Net mass Grams P g 6th Generation V-series 650V-IGBT Direct liquid Cooling Finbase with copper High power density and RoHS compliant VCE (sat): at Tj=25 C, Chip V CES I C(Cont) I V CE(sat) V F Device type Volts Typ. Volts Typ. Volts Net mass Grams IC 1.70IF M g 7 th Generation RC-IGBT 750V-IGBT High power density,small and High reliabilitytjmax 175 guaranteed VCE (sat): at Tj=25 C, Chip V CES I C(Cont) I V CE(sat) V F Device type Volts Typ. Volts Typ. Volts Net mass Grams g Under development

46 2 /SiC Devices SiC devices have excellent characteristics that realize high blocking voltage, low power dissipation, high-frequency operation and high-temperature operation. Power semiconductors that make use of SiC achieve significant reduction in energy consumption, and can be used to develop smaller and lighter products. High performance chips V series IGBT for low loss operation SiC-SBD for low loss operation The same package lineup as the conventional Si-IGBT modules Solder pins 62 W V 122 N P U M633 P N Thermistor U V W 1200V Ic IGBT Hybrid Modules with SiC-SBD V series 100A 6MSI100VB Dimension [mm] V CES V GES I C P C V CE(sat) (VGE=15V) Switching time Device type Cont. Typ. I C t on t off t f Package Net Typ. Typ. Typ. mass Volts Volts Amps. Watts Volts Amps. sec. sec. sec. Grams 6MSI100VB ± M New Products : EconoPACK Infineon Technologies Note: EconoPACK is registered trademarks of Infineon Technologies AG, Germany. 46

47 /SiC Devices 2 P P1 N 62N1 R S B T U V W 122 M712 P P R S T B Thermistor 600V 1200V Ic IGBT Hybrid Modules with SiC-SBD V series 35A 7MSR35VB A 7MSR50VB MSR50VB A 7MSR75VB A 7MSR100VB Dimension [mm] Inverter [IGBT] Brake [IGBT+FED] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Package Net Cont. Typ. Cont. Cont. Typ. mass Volts Amps. Watts Volts Volts Amps. Volts Volts Amps. Volts Amps. Grams 7MSR50VB M MSR75VB M MSR100VB M MSR35VB M MSR50VB M New Products : EconoPIM Infineon Technologies Note: EconoPIM is registered trademarks of Infineon Technologies AG, Germany. N N U V W Ic 1200V 1700V IGBT Hybrid Modules with SiC-SBD V series 200 2MSI200VAB M MSI300VAH-120C M M254 Thermistor 300 2MSI300VAN MSI450VAN MSI450VAN MSI550VAN MSI600VAN MSI400VE-170E M MSI1200VAT-170PC 2MSI1200VAT-170EC Dimension [mm] M256 V CES V GES I C P C VCE(sat) (VGE=15V) Switching time Device type Cont. Typ. I C t on t off t f Package Net Typ. Typ. Typ. mass Volts Volts Amps. Watts Volts Amps. sec. sec. sec. Grams 2MSI200VAB ± T.B.D T.B.D T.B.D M MSI300VAH-120C ± M MSI300VAN ± T.B.D T.B.D T.B.D M MSI450VAN ± T.B.D T.B.D T.B.D M MSI600VAN ± T.B.D T.B.D T.B.D M MSI450VAN ± T.B.D T.B.D T.B.D M MSI550VAN ± T.B.D T.B.D T.B.D M MSI400VE ± M MSI1200VAT-170PC 1700 ± T.B.D T.B.D T.B.D M MSI1200VAT-170EC 1700 ± T.B.D T.B.D T.B.D M New ProductsUnder development 47

48 2 /SiC Devices High speed switching High-frequency operation,miniaturization,weight saving Low-VF Low-IR Tj=175 C Guaranteed, High-temperature operation, Low-Loss, High efficiency High avalanche capability SiC-SBD Series TO-220 TO-220F TO-247 T-Pack(s) VRRM (V) Io (A) (Ta=25 C) Device type Maximaum rating Thermal rating Characteristics Package V RRM I O *1 I FSM *2 T j ( C) V FM I RRM *3 Volts Amps. Amps. MAX MAX. Volts MAX. A FDCP06S TO-220 FDCP08S TO-220 FDCP10S TO-220 FDCP20C TO-220 FDCP25S TO-220 FDCA10S TO-220F FDCA20C TO-220F FDCA25S TO-220F FDCA06S TO-220F FDCA08S TO-220F FDCY10S TO-247 FDCY20C TO-247 FDCY25S TO-247 FDCY50C TO-247 FDCC10S T-Pack(S) FDCC20C T-Pack(S) FDCC25S T-Pack(S) FDCA18S TO-220F FDCY18S TO-247 FDCY36C TO-247 Under development *150Hz duty=1/2 *2 10ms *3VR=VRRM *150Hz Square wave duty=1/2 *2Sine half wave, 10ms *3VR=VRRM 48

49 /SiC Devices 2 SiC-SBD Series TO-220 TO-247 T-Pack(s) VRRM (V) Io (A) VRRM I o I FSM V F I RRM rating Device type max. max. T j and T stg Package Net mass Volts Amps. Amps. Volts ma C Grams FDCP10S65A to +175 TO FDCY10S65A to +175 TO FDCC10S65A to +175 T-Pack(S) 1.6 FDCP20C65A * to +175 TO FDCY20C65A * to +175 TO FDCC20C65A * to +175 T-pack 1.6 FDCP25S65A to +175 TO FDCY25S65A to +175 TO FDCC25S65A to +175 T-pack 1.6 FDCY50C65A * to +175 TO FDCY18C120A to +175 TO FDCY36C120A * to +175 TO *1 : 2 in 1 package, IF=0.5Io 49

50 3 /Integrated Circuits Fuji Electric offers a lineup of AC/DC and DC/DC power supply control ICs that support a variety of power circuits. These highly efficient, low-noise products with low standby power consumption are compatible with environmental regulations. Furthermore, the many protection functions are built into the ICs themselves, allowing for smaller power circuits. Built-in 500/650V withstand voltage start up circuit Reduct switching frequency at light load Protect functions (Over voltage/brown out/2 stage Over power) Low EMI noise Built-in 500V withstand voltage start up circuit Green mode functions (Intermittent Switching/Linerary reduced switching frequency) Protect functions (Over voltage/over load etc.) Wide electric power range(from 75W to 1kW) Power factor 0.99 Protect functions (FB Pin open short/over voltage etc.) 50

51 /Integrated Circuits 3 Realize 1 convertor circuit structure at world wide input power Built-in High side driver Priventing capacitive region operation Protect functions (Over current/over voltage/over load/over heat/brown out) Green mode function (Intermittent switching) High negative transient voltage on VS terminal Wide range supply voltage up to 30V (FA5650/5651) 3.3V logic compatible Built-in under voltage lockout Allowable offset supply voltage transient dvs/dt up to 50kV/us High speed response: Turn on/off delay time 125ns (Typ) (FA5650/5651/5751) Part numbers F A 8 A 00 N F A N 51

52 3 /Integrated Circuits Type Name Duty (%) Input voltage Frequency (V) khz Current sense Over load protection Within Brown out function FA8A00N FA8A40N Auto-Recovery 12-24V FA8A01N FA8A41N 83% FA8A27N Timer-latch FA8A37N 10-28V FA8A39N Without Brown out function FA5680N 85% 11-24V Auto-Recovery Negative FA5681N Timer-latch FA8A60N Auto- FA8A64N Recovery FA8A61N FA8A65N Timer-latch FA8A70N FA8A74N Auto-Recovery FA8A71N FA8A75N Timer-latch 83% 10-24V FA8A12N Auto-Recovery FA8A80N FA8A84N Auto-Recovery FA8A81N FA8A85N Timer-latch FA8A90N FA8A94N Auto-Recovery FA8A91N FA8A95N Timer-latch New Product Over power protection Over voltage protection 2 2Stage (OPP ratio 1:1.4) Latch 2 2Stage (OPP ratio 1:1.8) 1 1Stage 2 2Stage 1 1Stage Latch Start up circuit 500V 500V 650V Green mode function X-Cap X-Cap discharge function 52

53 /Integrated Circuits 3 Green Mode PWM IC Brown Out function Current senes Within Positive Over power protection 2 Stage OPP ratio 1:1.4 2 Stage OPP ratio 1:1.8 Frequency (khz) Auto-recovery Timer-latch Auto-recovery Timer-latch Timer-latch OLP OLP Delay time (ms) Within Within Within Within Within Within Within FA8A00N FA8A01N FA8A40N FA8A41N FA8A27N FA8A37N FA8A39N PWM IC Green Mode PWM IC Brown Out function Over power protection Without 1 1 Stage 2 2 Stage Current senes Negative Positive Positive Auto-recovery Timer-latch Auto-recovery Timer-latch Auto-recovery Frequency (khz) Within Within Within Within Within FA5680N FA5681N FA8A60N FA8A70N FA8A64N FA8A74N FA8A61N FA8A71N FA8A65N FA8A75N FA8A12N FA8A80N FA8A90N FA8A84N FA8A94N FA8A81N FA8A91N FA8A85N FA8A95N VH CS FB LAT fb Start_up Block Start up 3V uvloh on current VCC UVLO comp. REF. reg (Internal power supply) X-CAP startup Discharge uvlo / Reg. reset Discharge Latch clk _Timer 1 time clamp latch VCC dchg Brown IN/OUT Block Soft Hys. comp. OSC ss reset Start uvlo bo OVP_VCC ovp clk BO_Timer clk latch Dmax OCP comp. VH voltage Line_ detect DBL Correction Driver fb PWM 1 shot S ON reset OSC Q RSFF Slope PWM R Dmax comp. ss reg FB_OFF OLP Block comp. OLP_CS OLP_Timer Over load ctrl T1 S Q OLP reset RSFF olp_short reset Reset SCP T2 R SCP comp. VCC Latch Block reg olp_short Start Up Latch comp. Management Latch_Timer Latch latch ovp clk on Set Reset Reset uvlo monitor ctrl startup bo reset vcc 35V VCC OUT GND VH CS FB LAT Start_up Block vcc Start up pwm_on reset on current VCC UVLO comp. Reg5 VDD55V 30V startup Vref reset Gen. VDD33.15V Reg3 vdd_uvlo Latch Timer power_off Soft 1 time clamp VCC OVP ovp reset latch reset OSC Start VCC dchg Vss clk VH voltage clk PWM OSC Block detect Line Dmax Correction jitter fb PWM lat_set OSC 1shot Driver CS pwm_on S state set Slope Q Dmax vcc RSFF PWM POM power_off clk R comp. Control Vcssl VDD5 Vss su_on FB OFF OCP comp. comp. OLP Block latch Vfbd OLP comp. reset OLP Timer Over load fb T1 S ctrl Q pwm_on OLP reset RSFF reset Reset T2 CS R olp state set lat_set power_off POM comp. clk VDD3 POM Timer reset su_on latch Start Up 5uA Management Latch Timer Latch latch ovp clk lat_ovp Set on Reset Reset vcc monitor ctrl startup Latch comp. OHP reset VCC OUT GND 53

54 3 /Integrated Circuits Type Name Control mode Duty Input voltage (V) Current sense Within Green mode function FA3641P/N Positive FA3647P/N Negative FA5604N FA5605N Voltage mode 46 FA5606N Negative Over load protection Timer-latch Auto-Recovery Over voltage protection Latch UVLO Under-voltage lockout (ON/OFF) 17.5V/9.7V Without Green mode function FA13842P/N 96 FA13843P/N FA13844P/N Current 48 FA13845P/N mode 16.5V/9.0V FA5504P/N Positive 46 FA5510P/N FA5511P/N Timer-latch FA5514P/N 46 Voltage Latch mode FA5515P/N 70 FA5607N Negative Auto-Recovery 17.5V/9.7V Remarks 1.8V/1.95V Frequency reduction start/stop FB voltage under light load 1.8V/1.95V 1.55V/1.65V Frequency reduction start/stop FB voltage under light load 1.55V/1.65V Within error ampli er PKG: 8pinAll 8pin Frequency: Adjustable 54

55 /Integrated Circuits 3 General PWM IC Within Voltage mode Duty 46% 70% Negative Positive Negative Auto-recovery Timer-latch Auto-recovery OLP HICCUP RATE 1:7 1:15 1:7 FA5604N FA3641P/N General PWM IC Without Voltage mode Current mode Duty 46% 70% 96% 48% Positive Negative Positive Negative Positive Positive 16.5V/9.0V 9.6V/9.0V 16.5V/9.0V 9.6V/9.0V Within ER-amp FA5504P/N FA5510P/N FA5514P/N FA5511P/N FA5515P/N FA5607N FA13842P/N FA13843P/N FA13844P/N FA13845P/N FA13842P/N FA5604N CS(8) OSC & counter (For Hiccup) 80 VCC(6) 3.6V ON/OFF 0.75V/0.60V 5V Reg. Check 5V Reg. UVLO 15.5V 37.5V 5V Latch S Q Internal supply 17.5V/9.7V 7.3V R QB FB(2) 10k 1M UVLO PWM S Q R QB EN OUTPUT OUT(5) 10pF S Q Voltage Controlled Oscillator ONE SHOT R QB Dmax= 46% 3.5/3.3V Output current limit function Overload Sensing 0.17V GND(4) VF(7) RT(1) IS(3) 55

56 3 /Integrated Circuits Type Name FA5570N FA5571N FA5572N FA5573N FA5574N FA5577N FA5640N FA5641N FA5642N FA5643N FA5644N FA5648N Input voltage Maximum (V) frequency kHz PKG: 8pinAll 8pin Over load protection Auto-Recovery Timer-latch Auto-Recovery Timer-latch Auto-Recovery Auto-Recovery Timer-latch Auto-Recovery Over voltage sense ZCD ZCD Pin VCC VCC Pin ZCD ZCD Pin Start up circuit 500V Green mode function Intermittent operation Linerary frequency reduction Intermittent operation UVLO Under-voltage lockout (ON/OFF) 18V/8V 14V/8V 10V/8V 14V/8V Remarks Min. frequency limitation 56

57 /Integrated Circuits 3 IC Quasi-resonant IC Frequency Control of bottom skips by on-off width detection : 120kHz Max. frequency: 120kHz Intermittent operation Intermittent operation Reduced ferquency Auto-recovery Timer-latch Auto-recovery Timer-latch Auto-recovery Timer-latch 14.0V/8.0V 10.0V/8.0V 14.0V/8.0V 18.0V/8.0V 18.0V/8.0V 18.0V/8.0V 18.0V/8.0V ZCD Pin ZCD Pin ZCD Pin VCC Pin ZCD Pin Min. frequency limitation IS Latch stop function of IS pin High Sw frequency FA5640N FA5641N FA5643N FA5648N FA5642N FA5644N FA5570N FA5571N FA5572N FA5573N FA5577N FA5574N FA5570N FA5640N 30k set mode select signal VinH MP1 Resistance ratio MP1 on/off 91.3%/100% 24k 84.1%/100% VinH VinH 150k VinH VinH 57

58 3 /Integrated Circuits Type Name Input voltage (V) PFC CRMPFC FA5590N FA5591N FA1A10N FA1A11N FA5695N FA5696N FA1A00N FA1A01N Duty (%) Current sense Negative UVLO Under-voltage lockout Frequency (ON/OFF) 9.6V/9.0V 13.0V/9.0V 9.6V/8.8V 12.4V/8.8V 13.0V/9.0V 9.6V/9.0V 9.6V/8.8V 12.4V/8.8V Self-oscillation Maximum frequency Adjustable Fixed Adjustable Fixed Zero Current Detection Current sence FB FB open short protection Over voltage protection Voltage-Limit by Pulse width Voltage-Limit by Pulse width and Voltage-Limit Remarks FA5601N FA1A21N FA1A31N Positive 13.0V/9.0V 17.3V/8.8V 17.3V/8.8V Adjustable Fixed Auxiliarywinding Voltage-Limit by Pulse width Over load protection PFCCCMPFC FA5502P/M FA5612N FA5613N Negative 16.5V/8.9V 9.6V/9.0V 13.0V/9.0V Adjustable Choice 65/60kHz/jitter (50-70kHz) 150kHz Voltage-Limit Voltage-Limit by Pulse width Under development PKG: FA550216pin 8pinFA5502 is 16pin, others are 8pin 58

59 59 /Integrated Circuits 3 FA5591N FA5613N UVLO Multiplier O.V.P. O.C.P Gate Driver FB VIN Detector IL Detector IS VCC ERR. AMP OUT Dinamic O.V.P. Static O.V.P. FB OSC + GND UV SP 12k 28k VCMP PWM COMP ICMP 2.5M SP UV VD VD State Set 5.0V VDET VREF Internal Bias : 5V 0.3V CUR. AMP 2.5V 0.5V 2.7V G G G 28V FA5696N FA5590N FA5695N Current sense Negative Negative Positive 13.0V/9.0V 9.6V/9.0V 13.0V/9.0V 9.6V/9.0V 13.0V/9.0V 16.5V/8.9V PFC IC CRM Adjustable CCM FA5591N FA5601N FA1A01N Negative Positive 17.3V/8.8V 9.6V/8.8V 12.4V/8.8V FA1A11N FA1A31N FA1A21N FA5613N FA5612N Fixed FA5502P/M FA1A00N FA1A10N

60 60 /Integrated Circuits FA5760N Current Resonant IC 200kHz 350kHz 350kHz 350kHz FA5760N FA6A00N FA6A10N FA6A11N FA6A30N FA6A31N Type Name Control mode Input voltage (V) UVLO Under-voltage lockout (ON/OFF) Current sense Frequency Maximum frequency (khz) Over load protection Over voltage protection Start up circuit Brown out function FA5760N Voltage mode V/8.9V Positive Self-oscillation 200 Auto- Recovery Timer-latch 500V Fixed FA6A00N V/9.0V 350 FA6A10N 350 Adjustable FA6A11N 350 Timer-latch FA6A30N Auto-Recovery FA6A31N Timer-latch : New ProductPKG: 16pinAll 16pin FA6A00N

61 /Integrated Circuits 3 Type name Absolute maximum ratings Maximum Output current High side supply voltage source / sink oatingsupply voltage Maximum input frequency Electrical characteristics Logic"1" / "0" Input voltage level (typ.) Turn-on/off propagation delay time (typ.) VCC and VBS supply under-voltage threshold (typ.) Number of Input terminal Package FA5650N FA5651N FA5751N FA5752N 830V 30V -1.4A/1.8A 624V 24V -0.2A/0.35A High side IHO: -0.62A/1.00A Low side ILO: -0.56A/0.91A 500kHz Logic"1" 2.1V Logic"0" 1.1V 125ns positive Logic"1" 2.1V Logic"0" 1.3V 125ns 130ns going 8.9V negative going 8.2V 2 SOP-8 SOP-16 SOP-8 SOP-8 SOP-16 SOP-8 SOP-8 FA5650N FA5651N FA5751N FA5752N FA5650N FA5651N FA5650N FA5751/52N 1 HIN (NC) 16 1 HIN VB 8 1 VCC VB LIN (NC) (NC) (NC) VB 15 HO 14 VS 13 (NC) LIN GND LO HO VS VCC HIN LIN LO HO 7 VS 6 GND GND LO VCC (NC) 11 (NC) 10 (NC) 9 61

62 3 /Integrated Circuits Type Name Control mode Boost Fly back Buck Inverting Output channel Input voltage Frequency Reference Voltage Operating Ambient Temperature Output Current MOSFET Package Output MOSFET FA7700V V 50k - 1MHz 0.88V TSSOP-8 FA7701V V 50k - 1MHz 0.88V TSSOP-8 FA7703V V 50k - 1MHz 1.0V TSSOP-16 SOP-16 FA7704V V 50k - 1MHz 1.0V TSSOP-16 FA3687V V 300k - 1.5MHz 1.0V TSSOP-16 FA7711V V 200k - 800kHz Adjustable TSSOP-24 FA7764AN/P V 30k - 400kHz 1.0V A Within SOP-8E 1 ch 2 ch 3 ch 1ch Pch Vcc: 2.5 to 18V Vcc: 2.5 to 28V Vcc: 2.5 to 18V Vcc: 4.5 to 28V Vcc: 9 to 45V FA7700V FA7701V FA7703V FA7704V FA3687V FA7711V FA7764AN/P FA7711V FA7764AN/P VCC VREF CS3 CS2 CS1 Reference voltge UVLO Soft start RT IN1+ IN1- FB1 21 IN2+ IN2- FB2 24 IN3+ 23 IN3-22 FB3 Oscillator Er. Amp. 1 Comp. 1 Er. Amp. 2 Comp. 2 Er. Amp. 3 Comp. 3 PVCC P ch drive PGND PVCC N/P ch drive PGND PVCC N/P ch drive PGND PVCC OUT1 OUT2 SEL2 OUT3 SEL3 FB voltage dtection PGND CP GND 62

63 Fuji Electric has a lineup of power MOSFETs ranging from medium to high-voltage types with features such as low power loss, low noise, and low on-resistance. The Super J-MOS Series uses superjunction technology, and was developed primarily for models with a withstand voltage of 600 V. Superjunction technology has much improved trade-off charactarisity between On-resistance and Breakdown voltage. Super J MOS has the same turn-off loss and turn-off dv/dt capabilities at conventional MOS- FET. As a result, It contributs to high efficiency and miniaturization of power supply. ex) 600V/0.07/TO-3P 600V/0.07/TO-220F Low RonA 25% lower than our conventional MOSFET Low Eoss 30% lower than our conventional MOSFET Low QG 30% lower than our conventional MOSFET Coping with both low turn-off loss and low noise Guaranteed avalanche robustness Narrow band of the gate threshold voltage (typ.±0.5v) Due to low RDS (on), Selectable smaller package ex) 600V/0.07/TO-3P 600V/0.07/TO-220F PFC or PWM converter for Server, PC, PCS, UPS, LCD-TV, Lighting and Standard power supply 63

64 Fast-recovery body diode 50% lower than Super J MOS S2 High diode recovery ruggedness (High -di/dt ruggedness) Guaranteed avalanche robustness for resonant switching topologies in applications like UPS, Server,Telecom, LED lighting, Power conditioner system and Power supply. Super J MOS is registered trademarks of Fuji Electric. 64

65 The second generation Quasi-Planer Junction technology copes with both low loss/noise and usability. And this technology lets us achive high performance for power supply's circuit desine. Lower Emission (power loss, EMI noise) Easy to Design Easy to use Ecology Coping with both low loss and low noise Low RDS(on) High controlability of gate recistance during switching Low VGS ringing waveform during switching Narrow band of the gate threshold voltage(3.0±0.5v) High avalanche durability Super FAP-E 3 of the The Quasi-Planer Junction technology achieve low RDS(on) and low witching loss(low Qgd). Low turn off loss 75% lower than our conventional type Low Gate charge 60% lower than our conventional type High avalanche durability Due to low RDS(on), Selectable smaller package ex) 500V/0.4/TO-3P 500V/0.38/TO

66 10.0 RDS (on) max () V 200V 300V 400V 500V 600V 700V 800V 900V VDSS(V) Part numbers F M V 20 N 60 S1 F M V 60 N 190 S2 Super J MOS is registered trademarks of Fuji Electric. 66

67 Super J MOS S2 series TO-220 TO-220F (SLS) TO-3P(Q) TO-247-P2 TO-252 Vds (V) Ron () Id (A) V ( (30.6 ( (37.1 ( (62.4 ( (89.8 V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Qg Device type Max. typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP60N380S ± TO FMV60N380S ± TO-220F(SLS) 2.0 FMD60N380S ± TO-252 (0.3) FMP60N280S ± TO FMV60N280S ± TO-220F(SLS) 2.0 FMH60N280S ± TO-3P(Q) 5.0 FMD60N280S ± TO-252 (0.3) FMP60N190S ± TO FMV60N190S ± TO-220F(SLS) 2.0 FMW60N190S ± TO-247-P2 6.0 FMP60N160S ± TO FMV60N160S ± TO-220F(SLS) 2.0 FMW60N160S ± TO-247-P2 6.0 FMP60N125S ± TO FMV60N125S ± TO-220F(SLS) 2.0 FMW60N125S ± TO-247-P2 6.0 FMP60N099S ± TO FMV60N099S ± TO-220F(SLS) 2.0 FMW60N099S ± TO-247-P2 6.0 New ProductsUnder development The Super J MOS series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 67

68 V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Q G Device type Max. typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP60N088S ± TO FMV60N088S ± TO-220F(SLS) 2.0 FMW60N088S ± TO-247-P2 6.0 FMP60N079S ± TO FMV60N079S ± TO-220F(SLS) 2.0 FMW60N079S ± TO-247-P2 6.0 FMV60N070S ± TO-220F(SLS) 2.0 FMW60N070S ± TO-247-P2 6.0 FMW60N055S ± TO-247-P2 6.0 FMW60N040S ± TO-247-P2 6.0 FMW60N025S ± TO-247-P2 6.0 New Product V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Q G Device type Max. typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams (FMP65N101S2) 650 (30.6) (91.8) (0.1010) TBD (30) TBD TBD TO (FMV65N101S2) 650 (30.6) (91.8) (0.1010) TBD (30) TBD TBD TO-220F(SLS) 2.0 (FMW65N101S2) 650 (30.6) (91.8) (0.1010) TBD (30) TBD TBD TO-247-P2 6.0 (FMV65N079S2) 650 (37.1) (111.3) (0.079) TBD (30) TBD TBD TO-220F(SLS) 2.0 (FMW65N079S2) 650 (37.1) (111.3) (0.079) TBD (30) TBD TBD TO-247-P2 6.0 (FMW65N045S2) 650 (62.4) (187.2) (0.0450) TBD (30) TBD TBD TO-247-P2 6.0 (FMW65N029S2) 650 (89.8) (269.4) (0.0287) TBD (30) TBD TBD TO-247-P2 6.0 Under development The Super J MOS series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 68

69 Super J MOS S2FD Series TO-220 TO-220F (SLS) TO-247-P2 (Built-in FRED type) Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Q G Trr Device type Max. typ. typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc ns Grams FMP60N170S2FD ±1.0 (47) 150 TO FMV60N170S2FD ±1.0 (47) 150 TO-220F(SLS) 2.0 FMW60N170S2FD ±1.0 (47) 150 TO-247-P2 6.0 FMP60N133S2FD ±1.0 (59) 160 TO FMV60N133S2FD ±1.0 (59) 160 TO-220F(SLS) 2.0 FMW60N133S2FD ±1.0 (59) 160 TO-247-P2 6.0 FMP60N105S2FD ± TO FMV60N105S2FD ± TO-220F(SLS) 2.0 FMW60N105S2FD ± TO-247-P2 6.0 FMP60N094S2FD ± TO FMV60N094S2FD ± TO-220F(SLS) 2.0 FMW60N094S2FD ± TO-247-P2 6.0 FMP60N084S2FD ±1.0 (91) 190 TO FMV60N084S2FD ±1.0 (91) 190 TO-220F(SLS) 2.0 FMW60N084S2FD ±1.0 (91) 190 TO-247-P2 6.0 FMV60N075S2FD ± TO-220F(SLS) 2.0 FMW60N075S2FD ± TO-247-P2 6.0 FMW60N059S2FD ±1.0 (127) 215 TO-247-P2 6.0 FMW60N043S2FD ± TO-247-P2 6.0 FMW60N027S2FD ±1.0 (274) 288 TO-247-P2 6.0 New Product The Super J MOS series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 69

70 Super J MOS S1 series TO-220 TO-220F (SLS) TO-3P(Q) TO-247-P2 Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Q G Device type Max. typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP07N60S ± TO FMV07N60S ± TO-220F(SLS) 2.0 FMP08N60S ± TO FMV08N60S ± TO-220F(SLS) 2.0 FMP10N60S ± TO FMV10N60S ± TO-220F(SLS) 2.0 FMP13N60S ± TO FMV13N60S ± TO-220F(SLS) 2.0 FMH13N60S ± TO-3P(Q) 5.0 FMP15N60S ± TO FMV15N60S ± TO-220F(SLS) 2.0 FMH15N60S ± TO-3P(Q) 5.0 FMW15N60S ± TO-247-P2 6.0 FMP20N60S ± TO FMV20N60S ± TO-220F(SLS) 2.0 FMH20N60S ± TO-3P(Q) 5.0 FMW20N60S ± TO-247-P2 6.0 FMP22N60S ± TO FMV22N60S ± TO-220F(SLS) 2.0 FMH22N60S ± TO-3P(Q) 5.0 FMW22N60S ± TO-247-P2 6.0 FMP30N60S ± TO FMV30N60S ± TO-220F(SLS) 2.0 FMH30N60S ± TO-3P(Q) 5.0 FMW30N60S ± TO-247-P2 6.0 FMV35N60S ± TO-220F(SLS) 2.0 FMH35N60S ± TO-3P(Q) 5.0 FMW35N60S ± TO-247-P2 6.0 FMV40N60S ± TO-220F(SLS) 2.0 FMH40N60S ± TO-3P(Q) 5.0 FMW40N60S ± TO-247-P2 6.0 FMH47N60S ± TO-3P(Q) 5.0 FMW47N60S ± TO-247-P2 6.0 FMW57N60S ± TO-247-P2 6.0 FMW79N60S ± TO-247-P2 6.0 The Super J MOS series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 70

71 Super J MOS S1FD series (Built-in FRED type) TO-220 TO-220F (SLS) TO-3P(Q) TO-247-P2 Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P D V GS V GS (th) Q G Device type Max. typ. typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP20N60S1FD ± TO FMV20N60S1FD ± TO-220F(SLS) 2.0 FMH20N60S1FD ± TO-3P(Q) 5.0 FMW20N60S1FD ± TO-247-P2 6.0 FMP22N60S1FD ± TO FMV22N60S1FD ± TO-220F(SLS) 2.0 FMH22N60S1FD ± TO-3P(Q) 5.0 FMW22N60S1FD ± TO-247-P2 6.0 FMP30N60S1FD ± TO FMV30N60S1FD ± TO-220F(SLS) 2.0 FMH30N60S1FD ± TO-3P(Q) 5.0 FMW30N60S1FD ± TO-247-P2 6.0 FMV35N60S1FD ± TO-220F(SLS) 2.0 FMH35N60S1FD ± TO-3P(Q) 5.0 FMW35N60S1FD ± TO-247-P2 6.0 FMH40N60S1FD ± TO-3P(Q) 5.0 FMW40N60S1FD ± TO-247-P2 6.0 FMH47N60S1FD ± TO-3P(Q) 5.0 FMW47N60S1FD ± TO-247-P2 6.0 FMW57N60S1FD ± TO-247-P2 6.0 FMW79N60S1FD ± TO-247-P2 6.0 The Super J MOS series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 71

72 Low-on resistance and low switching noise SuperFAP-E 3 series TO-220 TO-220 (SLS) TO-3P (Q) TO-3PF T-Pack(L) T-Pack(S) Vds (V) Ron () Id (A)

73 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP05N50E ± TO FMV05N50E ± TO-220F(SLS) 1.7 FMI05N50E ± T-Pack(L) 1.6 FMC05N50E ± T-Pack(S) 1.6 FMP07N50E ± TO FMV07N50E ± TO-220F(SLS) 1.7 FMI07N50E ± T-Pack(L) 1.6 FMC07N50E ± T-Pack(S) 1.6 FMP08N50E ± TO FMV08N50E ± TO-220F(SLS) 1.7 FMP12N50E ± TO FMV12N50E ± TO-220F(SLS) 1.7 FMI12N50E ± T-Pack(L) 1.6 FMC12N50E ± T-Pack(S) 1.6 FMP16N50E ± TO FMV16N50E ± TO-220F(SLS) 1.7 FMI16N50E ± T-Pack(L) 1.6 FMC16N50E ± T-Pack(S) 1.6 FMH16N50E ± TO-3P(Q) 5.1 FMP20N50E ± TO FMV20N50E ± TO-220F(SLS) 1.7 FMI20N50E ± T-Pack(L) 1.6 FMC20N50E ± T-Pack(S) 1.6 FMH20N50E ± TO-3P(Q) 5.1 FMV23N50E ± TO-220F(SLS) 1.7 FMH23N50E ± TO-3P(Q) 5.1 FMR23N50E ± TO-3PF 6.0 FMH28N50E ± TO-3P(Q) 5.1 FMR28N50E ± TO-3PF R DS (on) : V GS=10V, 2 P D: T C=25 C Letter symbols VDSS: Drain-source voltage ID : Continuous drain current ID(pulse) Pulsed drain current RDS(on) Drain-source on-state resistance PD Maximum power dissipation VGS Gate-source voltage VGS(th) Gate threshold voltage QG Total gate charge The SuperFAP-E 3 series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 73

74 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP03N60E ± TO FMV03N60E ± TO-220F(SLS) 1.7 FMI03N60E ± T-Pack(L) 1.6 FMC03N60E ± T-Pack(S) 1.6 FMP05N60E ± TO FMV05N60E ± TO-220F(SLS) 1.7 FMI05N60E ± T-Pack(L) 1.6 FMC05N60E ± T-Pack(S) 1.6 FMP06N60E ± TO FMV06N60E ± TO-220F(SLS) 1.7 FMP10N60E ± TO FMV10N60E ± TO-220F(SLS) 1.7 FMI10N60E ± T-Pack(L) 1.6 FMC10N60E ± T-Pack(S) 1.6 FMP11N60E ± TO FMV11N60E ± TO-220F(SLS) 1.7 FMI11N60E ± T-Pack(L) 1.6 FMC11N60E ± T-Pack(S) 1.6 FMP13N60E ± TO FMV13N60E ± TO-220F(SLS) 1.7 FMI13N60E ± T-Pack(L) 1.6 FMC13N60E ± T-Pack(S) 1.6 FMP16N60E ± TO FMV16N60E ± TO-220F(SLS) 1.7 FMI16N60E ± T-Pack(L) 1.6 FMC16N60E ± T-Pack(S) 1.6 FMV19N60E ± TO-220F(SLS) 1.7 FMH19N60E ± TO-3P(Q) 5.1 FMR19N60E ± TO-3PF 6.0 FMH23N60E ± TO-3P(Q) 5.1 FMR23N60E ± TO-3PF 6.0 FMV07N65E ± TO-220F(SLS) 1.7 FMV09N65E ± TO-220F(SLS) 1.7 FMV07N70E ± TO-220F(SLS) 1.7 FMH07N70E ± TO-3P(Q) 5.1 FMV09N70E ± TO-220F(SLS) 1.7 FMH09N70E ± TO-3P(Q) 5.1 FMV11N70E ± TO-220F(SLS) 1.7 FMH11N70E ± TO-3P(Q) 5.1 FMV15N70E ± TO-220F(SLS) 1.7 FMV06N80E ± TO-220F(SLS) 1.7 FMH06N80E ± TO-3P(Q) 5.1 FMI06N80E ± T-Pack(L) 1.6 FMC06N80E ± T-Pack(S) 1.6 FMV08N80E ± TO-220F(SLS) 1.7 FMH08N80E ± TO-3P(Q) 5.1 FMI08N80E ± T-Pack(L) 1.6 FMC08N80E ± T-Pack(S) 1.6 FMV10N80E ± TO-220F(SLS) 1.7 FMH10N80E ± TO-3P(Q) 5.1 FMV13N80E ± TO-220F(SLS) 1.7 FMH13N80E ± TO-3P(Q) R DS (on) : V GS=10V, 2 P D: T C=25 C 74

75 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMH06N90E ± TO-3P(Q) 5.1 FMV06N90E ± TO-220F(SLS) 1.7 FMI06N90E ± T-Pack(L) 1.6 FMC06N90E ± T-Pack(S) 1.6 FMH07N90E ± TO-3P(Q) 5.1 FMV07N90E ± TO-220F(SLS) 1.7 FMI07N90E ± T-Pack(L) 1.6 FMC07N90E ± T-Pack(S) 1.6 FMH09N90E ± TO-3P(Q) 5.1 FMV09N90E ± TO-220F(SLS) 1.7 FMR09N90E ± TO-3PF 6.0 FMH11N90E ± TO-3P(Q) 5.1 FMV11N90E ± TO-220F(SLS) 1.7 FMR11N90E ± TO-3PF R DS (on) : V GS=10V, 2 P D: T C=25 C 75

76 Low-on resistance, low switching noise and low switching loss SuperFAP-E 3S Low Qg series TO-220 TO-220 (SLS) TO-3P (Q) TO-3PF T-Pack(L) T-Pack(S) TFP Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP12N50ES ± TO FMV12N50ES ± TO-220F(SLS) 1.7 FMI12N50ES ± T-Pack(L) 1.6 FMC12N50ES ± T-Pack(S) 1.6 FML12N50ES ± TFP 1.6 FMP16N50ES ± TO FMV16N50ES ± TO-220F(SLS) 1.7 FMI16N50ES ± T-Pack(L) 1.6 FMC16N50ES ± T-Pack(S) 1.6 FMH16N50ES ± TO-3P(Q) 5.1 FML16N50ES ± TFP 1.6 FMP20N50ES ± TO FMV20N50ES ± TO-220F(SLS) 1.7 FMI20N50ES ± T-Pack(L) 1.6 FMC20N50ES ± T-Pack(S) 1.6 FMH20N50ES ± TO-3P(Q) 5.1 FML20N50ES ± TFP 1.6 FMV21N50ES ± TO-220F(SLS) 1.7 FMR21N50ES ± TO-3PF 6.0 FMH21N50ES ± TO-3P(Q) 5.1 FMV23N50ES ± TO-220F(SLS) 1.7 FMR23N50ES ± TO-3PF 6.0 FMH23N50ES ± TO-3P(Q) 5.1 FMR28N50ES ± TO-3PF 6.0 FMH28N50ES ± TO-3P(Q) R DS (on) : V GS=10V, 2 P D: T C=25 C The SuperFAP-E 3S series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 76

77 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMP06N60ES ± TO FMV06N60ES ± TO-220F(SLS) 1.7 FMI06N60ES ± T-Pack(L) 1.6 FMC06N60ES ± T-Pack(S) 1.6 FMP12N60ES ± TO FMV12N60ES ± TO-220F(SLS) 1.7 FMI12N60ES ± T-Pack(L) 1.6 FMC12N60ES ± T-Pack(S) 1.6 FML12N60ES ± TFP 1.6 FMP13N60ES ± TO FMV13N60ES ± TO-220F(SLS) 1.7 FMI13N60ES ± T-Pack(L) 1.6 FMC13N60ES ± T-Pack(S) 1.6 FMH13N60ES ± TO-3P(Q) 5.1 FML13N60ES ± TFP 1.6 FMP16N60ES ± TO FMV16N60ES ± TO-220F(SLS) 1.7 FMI16N60ES ± T-Pack(L) 1.6 FMC16N60ES ± T-Pack(S) 1.6 FMH16N60ES ± TO-3P(Q) 5.1 FML16N60ES ± TFP 1.6 FMV17N60ES ± TO-220F(SLS) 1.7 FMR17N60ES ± TO-3PF 6.0 FMH17N60ES ± TO-3P(Q) 5.1 FMV19N60ES ± TO-220F(SLS) 1.7 FMR19N60ES ± TO-3PF 6.0 FMH19N60ES ± TO-3P(Q) 5.1 FMR23N60ES ± TO-3PF 6.0 FMH23N60ES ± TO-3P(Q) R DS (on) : V GS=10V, 2 P D: T C=25 C The SuperFAP-E 3S series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 77

78 Low-on resistance and low gate charge SuperFAP-G series TO-220 TO-220F TO-220 (SLS) TO-3PF TO-247 T-Pack(L) T-Pack(S) TFP Vds (V) Ron () Id (A)

79 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK ±30 3 to 5 22 TO SK MR ±30 3 to 5 22 TO-220F 1.7 2SK L, S ±30 3 to 5 22 T-pack 1.6 2SK ±30 3 to 5 52 TO SK MR ±30 3 to 5 52 TO-220F 1.7 2SK L, S ±30 3 to 5 52 T-pack 1.6 2SK ±30 3 to 5 52 TFP 0.8 2SK ±30 3 to 5 21 TO SK MR ±30 3 to 5 21 TO-220F 1.7 2SK L, S ±30 3 to 5 21 T-pack 1.6 2SK ±30 3 to 5 34 TO SK MR ±30 3 to 5 34 TO-220F 1.7 2SK L, S ±30 3 to 5 34 T-pack 1.6 2SK ±30 3 to 5 34 TFP 0.8 2SK MR ±20 1 to TO-220F 1.7 2SK ±30 3 to 5 52 TO SK MR ±30 3 to 5 52 TO-220F 1.7 2SK L, S ±30 3 to 5 52 T-pack 1.6 2SK ±30 3 to 5 52 TFP 0.8 2SK ±30 3 to TO SK ±30 3 to 5 21 TO SK MR ±30 3 to 5 21 TO-220F 1.7 2SK L, S ±30 3 to 5 21 T-pack 1.6 2SK ±30 3 to 5 21 TFP 0.8 2SK ±30 3 to 5 51 TO SK MR ±30 3 to 5 51 TO-220F 1.7 2SK L, S ±30 3 to 5 51 T-pack 1.6 2SK ±30 3 to 5 51 TFP 0.8 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 FMV24N25G ±30 3 to 5 36 TO-220F(SLS) 1.7 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TFP 0.8 2SK R ± TO-3PF 6.0 2SK ± TO SK R ± TO-3PF R DS (on) : V GS=10V, 2 P D: T C=25 C The Super FAP-G series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 79

80 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK MR ± TO-220F 1.7 2SK ±30 3 to TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TFP 0.8 2SK ±30 3 to TO SK MR ±30 3 to TO-220F 1.7 2SK ±30 3 to 5 13 TO SK MR ±30 3 to 5 13 TO-220F 1.7 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ±30 3 to 5 33 TO SK MR ±30 3 to 5 33 TO-220F 1.7 2SK L, S ±30 3 to 5 33 T-pack 1.6 2SK ±30 3 to 5 33 TFP 0.8 2SK ±30 3 to 5 13 TO SK MR ±30 3 to 5 13 TO-220F 1.7 2SK L, S ±30 3 to 5 13 T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK MR ± to TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO FML19N50G ±30 3 to 5 32 TFP 0.8 2SK ± TO SK R ± TO-3PF 6.0 2SK ± TO R DS (on) : V GS=10V, 2 P D: T C=25 C 80

81 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK ±30 3 to 5 13 TO SK MR ±30 3 to 5 13 TO-220F 1.7 2SK L, S ±30 3 to 5 13 T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK R ± TO-3PF 6.0 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO SK ± TO SK R ± TO-3PF 6.0 2SK ± TO SK R ± TO-3PF 6.0 2SK ± TO SK MR ± TO-220F 1.7 2SK ±30 3 to 5 13 TO SK MR ±30 3 to 5 13 TO-220F 1.7 2SK L, S ±30 3 to 5 13 T-pack 1.6 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack R DS (on) : V GS=10V, 2 P D: T C=25 C 81

82 SuperFAP-G Built-in FRED series TO-220 TO-220F TO-247 T-Pack (L) T-Pack (S) Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. 1 Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams 2SK ± TO SK MR ± TO-220F 1.7 2SK ± TO SK MR ± TO-220F 1.7 2SK L, S ± T-pack 1.6 2SK ± TO R DS (on) : V GS=10V, 2 P D: T C=25 C 82

83 Low-on resistance and high gate capability Trench Power MOSFET TO-220 TO-220F TO-3P (Q) TO-247 T-Pack(L) T-Pack(S) D2-pack Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Device type Max. 1 typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams 2SK / TO SK MR / TO-220F 1.7 2SK / TO SK L, S / T-pack (L, S) 1.6 2SK SJ / D2-pack 1.6 2SK S / T-pack (S) 1.6 2SK / TO-3P 5.5 2SK MR ± TO-220F 1.7 2SK S ± T-pack (S) 1.6 FMC80N10R / T-pack (S) 1.6 FMY100N10R / TO RDS (on) : VGS=10V, 2 PD: TC=25 C V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Device type Max. 1 typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams FMP80N10T /-20 2 to 4 TO FMA80N10T /-20 2 to 4 TO-220F 1.7 FMI80N10T /-20 2 to 4 T-pack(L) 1.6 FMC80N10T /-20 2 to 4 T-pack(S) 1.6 FMP65N15T /-20 2 to 4 TO FMA65N15T /-20 2 to 4 TO-220F 1.7 FMI65N15T /-20 2 to 4 T-pack(L) 1.6 FMC65N15T /-20 2 to 4 T-pack(S) 1.6 FMP49N20T /-20 2 to 4 TO FMA49N20T /-20 2 to 4 TO-220F 1.7 FMI49N20T /-20 2 to 4 T-pack(L) 1.6 FMC49N20T /-20 2 to 4 T-pack(S) R DS (on) : V GS=10V, 2 P D: T C=25 C The Trench Power MOSFET series products satis es the quality assurance level of general consumer use. If you intend to use the products for equipment requiring higher reliability, such as equipment for automobiles and medical equipment, please contact Fuji Electric. Do not use the products for equipment requiring strict reliability such as aerospace equipment. 83

84 Automotive Super J MOS S1 series Automotive Super J MOS S1 Series TO-247 T-Pack(S) Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. typ. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMY47N60S1A ± TO FMY53N60S1A ± TO FMY68N60S1A ± TO RDS (on) : VGS=10V, 2 PD: TC=25 C Super J MOS is registered trademarks of Fuji Electric. Automotive Super J MOS S1 series of products satis es the quality assurance level of general automobile use (conforms to AEC-Q101). Do not use the products for equipment requiring strict reliability such as aerospace equipment. Automotive Super J MOS S1FD series (Built-in FRED type) V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. typ. Typ. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc nsec Grams FMC29N60S1FDA ± T-Pack 1.6 FMY29N60S1FDA ± TO FMY46N60S1FDA ± TO FMY52N60S1FDA ± TO FMY67N60S1FDA ± TO FMY52N65S1FDA ± TO R DS (on) : V GS=10V, 2 P D: T C=25 C (AEC-Q101) Super J MOS is registered trademarks of Fuji Electric. The Automotive Super J MOS S1FD series of products satis es the quality assurance level of general automobile use (conforms to AEC-Q101). Do not use the products for equipment requiring strict reliability such as aerospace equipment. 84

85 V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. typ. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMY60N160S2A ± TO FMC60N160S2A ± T-Pack 1.6 FMY60N125S2A ± TO FMC60N125S2A ± T-Pack 1.6 FMY60N099S2A ± TO FMC60N099S2A ± T-Pack 1.6 FMY60N088S2A ± TO FMC60N088S2A ± T-Pack 1.6 FMY60N079S2A ± TO FMC60N079S2A ± T-Pack 1.6 FMY60N070S2A ± TO FMY60N040S2A ± TO FMY60N025S2A ± TO R DS (on) : V GS=10V, 2 P D: T C=25 C (AEC-Q101) Super J MOS is registered trademarks of Fuji Electric. The Automotive Super J MOS S1FD series of products satis es the quality assurance level of general automobile use (conforms to AEC-Q101). Do not use the products for equipment requiring strict reliability such as aerospace equipment. Automotive Super J MOS S2FD series (Built-in FRED type) V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. typ. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMY60N105S2FDA ±1 64 TO FMC60N105S2FDA ±1 64 T-Pack 1.6 FMY60N081S2FDA ±1 100 TO FMC60N081S2FDA ±1 100 T-Pack R DS (on) : V GS=10V, 2 P D: T C=25 C Super J MOS is registered trademarks of Fuji Electric. The Automotive Super J MOS S2FD series of products satis es the quality assurance level of general automobile use (conforms to AEC-Q101). Do not use the products for equipment requiring strict reliability such as aerospace equipment. 85

86 3S Automotive Trench Power MOSFET SuperFAP-E 3S Low Qg series TO-220 TO-220F TO-3P (Q) TO-247 T-Pack(L) T-Pack(S) D2-pack Vds (V) Ron () Id (A) V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G Device type Max. typ. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc Grams FMY50N30ES / ± TO FMY72N30ES / ± TO FMY24N60ES / ± TO FMY31N60ES / ± TO FMY36N60ES / ± TO R DS (on) : V GS=10V, 2 P D: T C=25 C SuperFAP-E 3S Qg(AEC-Q101) The Automotive SuperFAP-E 3S Low Qg series of products satis es the quality assurance level of general automobile use (conforms to AEC-Q101). Do not use the products for equipment requiring strict reliability such as aerospace equipment. 86

87 Automotive SuperFAP-E 3S Low Qg Built-in FRED series V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Q G t rr Device type Max. typ. Typ. Typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts nc nsec Grams FMY47N30ESF / ± TO FMY67N30ESF / ± TO FMY22N60ESF / ± TO FMY30N60ESF / ± TO FMY35N60ESF / ± TO R DS (on) : V GS=10V, 2 P D: T C=25 C SuperFAP-E 3S Qg(AEC-Q101) Automotive SuperFAP-E 3S Low Qg Built-in FRED series of products satises the quality assurance level of general automobile use (conforms to AEC-Q101). Do not use the products for equipment requiring strict reliability such as aerospace equipment. Automotive Trench Power MOSFET V DSS I D I D (pulse) R DS (on) P 2 D V GS V GS (th) Device type Max. typ. Package Net mass Volts Amps. Amps. Ohms () Watts Volts Volts Grams 2SK / TO SK MR / TO-220F 1.7 2SK / TO SK L, S / T-pack 1.6 2SK SJ / D2-pack 1.6 2SK S / T-pack 1.6 FMY100N06T / TO SK / TO-3P 5.5 2SK MR ± TO-220F 1.7 2SK S ± T-pack 1.6 FMC80N10R / T-Pack 1.6 FMY100N10R / TO R DS (on) : V GS=10V, 2 P D: T C=25 C FMY100N06T and FMY100N10R6 satis es the quality assurance level of general automobile use (conforms to AEC-Q101). Do not use the products for equipment requiring strict reliability such as aerospace equipment. 87

88 Type Channels V GS I D R DS (on) P D Device type Max. Package Net mass Remarks Volts Amps. Ohms () Watts Grams F5044H High side SOP F5045P High side SOP F5106H High side SOP F5112H High side SOP F5062H High side PSOP F5072H High side PSOP F5018 Low side K-pack 0.6 F5019 Low side T-pack 1.6 F5020 Low side K-pack 0.6 F5033 Low side SOP F5041 Low side SOP F5042 Low side K-pack 0.6 F5043 Low side T-pack 1.6 F5048 Low side T-pack 1.6 F5055 Low side SSOP F5063L Low side SOP New Product 1 R DS (on) : V DS=13V 2 R DS (on) : V IN/V GS=5V 3 88

89 5 Fuji Electric s rectifier diodes have features such as low VF characteristics and low IR, and are compatible with PFC circuits of power supplies and secondary-side rectification circuits. Guaranteed Tj=175 C VF is same level and IR is reduced by less than 1/10. Super LLD-3 for CCM-PFC Realize acceleration and low VF compaired with existing model. Super LLD-2 for DCM-PFC Achieved low power loss by low VF Achieved low noise by soft recovery FDRW50C60L (example) F DR W 50 C 60 L 89

90 5 YA875C10R (example) YA 87 5 C 10 R ESAD92M02R (example) ESA D 92 M 02 R 90

91 5 TO-220F K-Pack(L) K-Pack(S) TFP V RRM (V) Io (A) V F (V) I R (ma) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V FM I 3 RRM R th (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams KS826S (Tc=110) to (I F=5.0A) 5 10 K-pack(S) 0.6 YG811S04R (Tc=122) to (I F=5.0A) TO-220F 1.7 YG812S04R (Tc=124) to (I F=10A) TO-220F 1.7 YG811S06R (Tc=127) to (I F=5.0A) TO-220F 1.7 YG804S06R (Tc=99) to (I F=15A) TO-220F 1.7 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms 3 V R=V RRM Letter symbols VRRM Repetitive peak reverse voltage VRSM Non-repetitive peak reverse voltage IO Average output current IFSM Surge current Tj Junction temperature Ta Ambient temperature Tc Case temperature Tstg Storage temperature VFM Forward voltage IRRM Reverse current trr Reverse recovery time Rth (j-c) Thermal resistance (Junction to case) Tl Lead temperature IF(AV) Average forward current 91

92 5 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM R th (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams KP883C (Tc=89) to (I F=2.5A) K-Pack(L) 0.6 KS883C (Tc=89) to (I F=2.5A) K-pack(S) 0.6 KS823C (Tc=117) to (I F=2.5A) K-pack(S) 0.6 KS823C (Tc=107) to (I F=2.5A) K-pack(S) 0.6 YG801C04R (Tc=125) to (I F=2.0A) TO-220F 1.7 YG802C04R (Tc=110) to (I F=4.0A) TO-220F 1.7 YG805C04R (Tc=100) to (I F=10A) TO-220F 1.7 YG838C04R (Tc=85) to (I F=12.5A) TO-220F 1.7 MS838C (Tc=111) to (I F=12.5A) TFP 0.8 YG801C06R (Tc=125) to (I F=2.0A) TO-220F 1.7 YG802C06R (Tc=118) to (I F=4.0A) TO-220F 1.7 YG803C06R (Tc=94) to (I F=6.0A) TO-220F 1.7 YG805C06R (Tc=108) to (I F=8.0A) TO-220F 1.7 MS808C (Tc=118) to (I F=12.5A) TFP 0.8 KS823C (Tc=100) to (I F=2.5A) K-pack(S) 0.6 YG801C10R (Tc=117) to (I F=1.5A) TO-220F 1.7 YG802C10R (Tc=102) to (I F=3.0A) TO-220F 1.7 YG805C10R (Tc=91) to (I F=5.0A) TO-220F 1.7 YG808C10R (Tc=80) to (I F=10A) TO-220F 1.7 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 3 I F=0.5Io 2 Sine wave, 10ms per element 3 I F=0.5Io per element 4 V R=V RRM 4 V R=V RRM per element 92

93 5 TO-220 TO-220F V RRM (V) Io (A) V F (V) I R (ma) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM R th (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams YG872C10R (Tc=146) to TO-220F 1.7 YA872C10R (Tc=158) to TO YG875C10R (Tc=131) to TO-220F 1.7 YA875C10R (Tc=144) to TO YG878C10R (Tc=122) to TO-220F 1.7 YA878C10R (Tc=142) to TO YG872C12R (Tc=143) to TO-220F 1.7 YA872C12R (Tc=158) to TO YG875C12R (Tc=127) to TO-220F 1.7 YA875C12R (Tc=144) to TO YG878C12R (Tc=116) to TO-220F 1.7 YA878C12R (Tc=141) to TO YG872C15R (Tc=144) to TO-220F 1.7 YA872C15R (Tc=157) to TO YG875C15R (Tc=130) to TO-220F 1.7 YA875C15R (Tc=143) to TO YG878C15R (Tc=120) to TO-220F 1.7 YA878C15R (Tc=140) to TO YG872C20R (Tc=143) to TO-220F 1.7 YA872C20R (Tc=157) to TO YG875C20R (Tc=127) to TO-220F 1.7 YA875C20R (Tc=141) to TO YG878C20R (Tc=116) to TO-220F 1.7 YA878C20R (Tc=138) to TO Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 3 I F=0.5Io 2 Sine wave, 10ms per element 3 I F=0.5Io per element 4 V R=V RRM 4 V R=V RRM per element 93

94 5 TO-220 TO-220F TO-3P (Q) TO-3PF TO-247 T-Pack(L) T-Pack(S) TFP V RRM (V) Io (A) V F (V) I R (ma) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM R th (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams YG861S12R (Tc=104) to TO-220F 1.7 YG861S15R (Tc=94) to TO-220F 1.7 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 I F=Io 4 V R=V RRM 2 Sine wave, 10ms 3 I F=Io 4 V R=V RRM 94

95 5 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM R th (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams YG865C04R (Tc=115) to TO-220F 1.7 YA865C04R (Tc=126) to TO TS865C04R (Tc=126) to T-pack(S) 1.6 MS865C (Tc=125) to TFP 0.8 YG868C04R (Tc=105) to TO-220F 1.7 YA868C04R (Tc=122) to TO TS868C04R (Tc=122) to T-pack(S) 1.6 MS868C (Tc=122) to TFP 0.8 YG862C06R (Tc=124) to TO-220F 1.7 YA862C06R (Tc=136) to TO TS862C06R (Tc=136) to T-pack(S) 1.6 YG865C06R (Tc=109) to TO-220F 1.7 YA865C06R (Tc=122) to TO TS865C06R (Tc=122) to T-pack(S) 1.6 YG868C06R (Tc=101) to TO-220F 1.7 YA868C06R (Tc=119) to TO TS868C06R (Tc=119) to T-pack(S) 1.6 YG869C06R (Tc=105) to TO-220F 1.7 YA869C06R (Tc=114) to TO TP869C06R (Tc=114) to T-Pack(L) 1.6 YG862C08R (Tc=109) to TO-220F 1.7 YA862C08R (Tc=126) to TO TS862C08R (Tc=126) to T-pack(S) 1.6 MS862C (Tc=115) to TFP 0.8 YG865C08R (Tc=89) to TO-220F 1.7 YA865C08R (Tc=107) to TO TS865C08R (Tc=107) to T-pack(S) 1.6 MS865C (Tc=108) to TFP 0.8 YG868C08R (Tc=72) to TO-220F 1.7 YA868C08R (Tc=105) to TO TS868C08R (Tc=105) to T-pack(S) 1.6 YG869C08R (Tc=86) to TO-220F 1.7 YA869C08R (Tc=98) to TO TP869C08R (Tc=98) to T-Pack(L) 1.6 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 I F=0.5Io1 2 Sine wave, 10ms per element 3 I F=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 95

96 5 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM R th (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams YG862C10R (Tc=118) to TO-220F 1.7 YA862C10R (Tc=132) to TO TS862C10R (Tc=132) to T-pack(S) 1.6 YG865C10R (Tc=103) to TO-220F 1.7 YA865C10R (Tc=117) to TO TS865C10R (Tc=117) to T-pack(S) 1.6 MS865C (Tc=117) to TFP 0.8 YG868C10R (Tc=91) to TO-220F 1.7 YA868C10R (Tc=113) to TO TS868C10R (Tc=113) to T-pack(S) 1.6 TP868C10R (Tc=113) to T-Pack(L) 1.6 MS868C (Tc=114) to TFP 0.8 PA868C10R (Tc=107) to TO-3P(Q) 5.1 YG869C10R (Tc=94) to TO-220F 1.7 YA869C10R (Tc=105) to TO TP869C10R (Tc=105) to T-Pack(L) 1.6 YG862C12R (Tc=122) to TO-220F 1.7 YA862C12R (Tc=137) to TO TP862C12R (Tc=137) to T-Pack(L) 1.6 TS862C12R (Tc=137) to T-pack(S) 1.6 YG865C12R (Tc=116) to TO-220F 1.7 YA865C12R (Tc=126) to TO PH865C (Tc=126) to TO TP865C12R (Tc=126) to T-Pack(L) 1.6 TS865C12R (Tc=126) to T-pack(S) 1.6 MS865C (Tc=126) to TFP 0.8 YG868C12R (Tc=116) to TO-220F 1.7 YA868C12R (Tc=122) to TO PH868C (Tc=122) to TO TS868C12R (Tc=122) to T-pack(S) 1.6 MS868C (Tc=115) to TFP 0.8 YG869C12R (Tc=95) to TO-220F 1.7 YA869C12R (Tc=104) to TO YG862C15R (Tc=117) to TO-220F 1.7 YA862C15R (Tc=134) to TO TP862C15R (Tc=134) to T-Pack(L) 1.6 TS862C15R (Tc=134) to T-pack(S) 1.6 YG865C15R (Tc=101) to TO-220F 1.7 PH865C (Tc=109) to TO PG865C15R (Tc=80) to TO-3PF 6.0 YA865C15R (Tc=115) to TO TP865C15R (Tc=115) to T-Pack(L) 1.6 TS865C15R (Tc=115) to T-pack(S) 1.6 MS865C (Tc=115) to TFP 0.8 YG868C15R (Tc=113) to TO-220F 1.7 YA868C15R (Tc=119) to TO TS868C15R (Tc=119) to T-pack(S) 1.6 MS868C (Tc=113) to TFP 0.8 PA868C15R (Tc=129) to TO-3P 5.5 PH868C (Tc=129) to TO YG869C15R (Tc=90) to TO-220F 1.7 YA869C15R (Tc=100) to TO Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 I F=0.5Io1 2 Sine wave, 10ms per element 3 I F=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 96

97 5 TO-220 TO-220F TO-247 V RRM (V) Io (A) V F (V) I R(A) Trr (sec) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V FM I 3 RRM t 4 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA971S6R (Tc=116) to (I F=8A) TO YG971S6R (Tc=89) to (I F=8A) TO-220F 1.7 YA972S6R (Tc=115) to (I F=10A) TO YG972S6R (Tc=89) to (I F=10A) TO-220F 1.7 YG971S8R (Tc=93) to (I F=5A) TO-220F 1.7 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms 3 V R=V RRM 4 I F=0.1A, IR=0.2A, Irec=0.05A 4 I F=0.1A, IR=0.2A, Irec=0.05A 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V FM I 3 RRM t 4 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA975C6R (Tc=106) to (I F=10A) TO YG975C6R (Tc=89) to (I F=10A) TO-220F 1.7 PH975C (Tc=97) to (I F=10A) TO Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 V R=V RRM 2 Sine wave, 10ms per element 3 V R=V RRM per element 4 I F=0.1A, IR=0.2A, Irec=0.05A I F=0.1A, IR=0.2A, Irec=0.05A 97

98 5 TO-220 TO-220F TO-247 T-Pack (S) V RRM (V) Io (A) V F (V) I R(A) Trr (sec) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V FM I 3 RRM t 4 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA981S6R (Tc=99) to (I F=8A) TO YG981S6R (Tc=58) to (I F=8A) TO-220F 1.7 YA982S6R (Tc=99) to (I F=10A) TO YG982S6R (Tc=60) to (I F=10A) TO-220F 1.7 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms 3 V R=V RRM 4 I F=0.1A, IR=0.2A, Irec=0.05A 4 I F=0.1A, IR=0.2A, Irec=0.05A 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V FM I 3 RRM t 4 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YA982C6R (Tc=88) to (I F=8A) TO TS982C6R (Tc=88) to (I F=8A) T-pack(S) 1.6 YG982C6R (Tc=68) to (I F=8A) TO-220F 1.7 YA985C6R (Tc=86) to (I F=10A) TO TS985C6R (Tc=86) to (I F=10A) T-pack(S) 1.6 YG985C6R (Tc=60) to (I F=10A) TO-220F 1.7 PH985C (Tc=73) to (I F=10A) TO Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty 1/2 Average forward current of centertap full wave connection 2 10ms. 3 V R=V RRM 2 Sine wave, 10ms per element 3 V R=V RRM per element 4 I F=0.1A. IR=0.2A. Irec=0.05A 4 I F=0.1A. IR=0.2A. Irec=0.05A 98

99 5 TO-220F K-Pack(L) K-Pack(S) TFP V RRM (V) Io (A) V F (V) I R(A) Trr (sec) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams KP926S (Tc=106) to K-Pack(L) 0.6 KS926S (Tc=106) to K-pack(S) 0.6 YG911S2R (Tc=134) to TO-220F 1.7 YG912S2R (Tc=116) to TO-220F 1.7 YG911S3R (Tc=128) to TO-220F 1.7 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty 1/2 2 10ms. 3 I F=Io 4 V R=V 2 RRM Sine wave, 10ms 3 I F=Io V R=V RRM 5 I F=0.1A. IR=0.2A. Irec=0.05A 5 I F=0.1A. IR=0.2A. Irec=0.05A 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams KP923C (Tc=103) to K-Pack(L) 0.6 KS923C (Tc=103) to K-pack(S) 0.6 YG901C2R (Tc=120) to TO-220F 1.7 YG902C2R (Tc=115) to TO-220F 1.7 YG906C2R (Tc=102) to TO-220F 1.7 MS906C (Tc=105) to TFP 0.8 YG901C3R (Tc=105) to TO-220F 1.7 YG902C3R (Tc=101) to TO-220F 1.7 MS906C (Tc=95) to TFP 0.8 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 I F=0.5Io1 2 Sine wave, 10ms per element 3 I F=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 5 I F=0.1A, IR=0.2A, Irec=0.05A I F=0.1A, IR=0.2A, Irec=0.05A 99

100 5 TO-220 TO-220F TO-3PF T-Pack (S) K-Pack (S) TFP V RRM (V) Io (A) V F (V) I R(A) Trr (sec) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams KS986S (Tc=128) to K-pack(S) 0.6 KS986S (Tc=125) to K-pack(S) 0.6 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 3 I F=Io 4 V R=V 2 RRM Sine wave, 10ms 3 I F=Io per element V R=V RRM 5 I F=0.1A, IR=0.2A, Irec=0.05A I F=0.1A, IR=0.2A, Irec=0.05A 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams YG982C3R (Tc=112) to TO-220F 1.7 YA982C3R (Tc=128) to TO TS982C3R (Tc=128) to T-pack(S) 1.6 YG985C3R (Tc=105) to TO-220F 1.7 YA985C3R (Tc=118) to TO TS985C3R (Tc=118) to T-pack(S) 1.6 MS985C (Tc=118) to TFP 0.8 PG985C3R (Tc=73) to TO-3PF 6.0 YG982C4R (Tc=107) to TO-220F 1.7 YA982C4R (Tc=125) to TO TS982C4R (Tc=125) to T-pack(S) 1.6 YG985C4R (Tc=100) to TO-220F 1.7 YA985C4R (Tc=114) to TO TS985C4R (Tc=114) to T-pack(S) 1.6 MS985C (Tc=114) to TFP 0.8 PG985C4R (Tc=64) to TO-3PF 6.0 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms. 1 3 I F=0.5Io1 2 Sine wave, 10ms per element 3 I F=0.5Io per element 4 V R=V RRM 1 V R=V RRM per element 5 I F=0.1A, IR=0.2A, Irec=0.05A I F=0.1A, IR=0.2A, Irec=0.05A 100

101 5 TO-3P(Q) TO-3PF T-Pack (S) T-Pack (L) V RRM (V) Io (A) V F (V) I R(A) in one-package/2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM R th (j-c) mass Volts Amps. Amps. Max. Volts Max.mA /W Grams TP802C04R (Tc=116) to (I F=4.0A) T-Pack(L) 1.6 TS802C04R (Tc=116) to (I F=4.0A) T-pack(S) 1.6 TS805C04R (Tc=110) to (I F=10A) T-pack(S) 1.6 ESAD83M-004RR (Tc=105) to (I F=12.5A) TO-3PF 6.0 ESAD83-004R (Tc=118) to (I F=12.5A) TO-3P 5.5 ESAD83M-006RR (Tc=106) to (I F=12.5A) TO-3PF 6.0 TS808C06R (Tc=115) to ( IF=12.5A) T-pack(S) 1.6 ESAD83-006R (Tc=119) to (I F=12.5A) TO-3P 5.5 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms Sine wave, 10ms per element 3 per element 4 V R=V RRM 1 V R=V RRM per element TO-3P(Q) TO-3PF T-Pack (S) T-Pack (L) V RRM (V) Io (A) V F (V) I R(A) Trr (sec) in one-package/2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams TP901C2R (Tc=120) to (I F=2.5A) T-Pack(L) 1.6 TP902C2R (Tc=125) to (I F=5A) T-Pack(L) 1.6 TS902C2R (Tc=125) to (I F=5A) T-pack(S) 1.6 ESAD92M-02RR (Tc=108) to (I F=10A) TO-3PF 6.0 TP906C2R (Tc=110) to (I F=10A) T-Pack(L) 1.6 TS906C2R (Tc=110) to (I F=10A) T-pack(S) 1.6 ESAD92-02R (Tc=115) to (I F=10A) TO-3P 5.5 TP902C3R (Tc=115) to (I F=5A) T-Pack(L) 1.6 TS902C3R (Tc=115) to (I F=5A) T-pack(S) 1.6 ESAD92-03R (Tc=110) to (I F=10A) TO-3P 5.5 ESAD92M-03RR (Tc=96) to (I F=10A) TO-3PF 6.0 PA905C4R (Tc=107) to (I F=10A) TO-3P 5.5 Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 Average forward current of centertap full wave connection 2 10ms Sine wave, 10ms per element 3 per element 4 V R=V RRM 1 5 I F=0.1A, IR=0.2A, Irec.=0.05A V R=V RRM per element 5 I F=0.1A, IR=0.2A, Irec.=0.05A 101

102 5 TO-220 TO-247-P2 V RRM (V) Io (A) V F (V) I R(A) Trr (sec) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams FDRP15S60L (Tc=98 C) to TO FDRW15S60L (Tc=85 C) to TO-247-P2 4.9 FDRP25S60L (Tc=86 C) to TO FDRW25S60L (Tc=86 C) to TO-247-P2 4.9 FDRW35S60L (Tc=91 C) to TO-247-P2 4.9 ( ) ( ) Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 1 3 I F=Io 2 Sine wave, 10ms 1shot 3 I F=Io 4 V R=V RRM 5 V R=30V, I F=0.1 Io, -di/dt=200a/us 4 V R=V RRM 5 V R=30V, I F=0.1 Io, -di/dt=200a/us 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams FDRW50C60L (Tc=86 C) to TO-247-P2 4.9 FDRW70C60L (Tc=91 C) to TO-247-P2 4.9 ( ) ( ) Conditions 1 50Hz duty=1/2 () 1 50Hz Square wave duty=1/2, Output Current of center tap full wave connection 2 10ms. 1 3 I F=0.5 Io, 1 2 Sine wave, 10ms 1shot, Rating per element 3 I F=0.5 Io, Rating per element 4 V R=V RRM 1 4 V R=V RRM, Rating per element 5 V R=30V, I F=0.05 Io, -di/dt=200a/us, 1 5 V R=30V, I F=0.05 Io, -di/dt=200a/us, Rating per element 102

103 5 TO-247-P2 V RRM (V) Io (A) V F (V) I R(A) Trr (sec) in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams FDRW12S120J (Tc=97 C) to TO-247-P2 4.9 FDRW20S120J (Tc=88 C) to TO-247-P2 4.9 FDRW30S120J (Tc=89 C) to TO-247-P2 4.9 ( ) ( ) Conditions 1 50Hz duty=1/2 1 50Hz Square wave duty=1/2 2 10ms. 1 3 I F=Io 2 Sine wave, 10ms 1shot 3 I F=Io 4 V R=V RRM 5 V R=30V, I F=0.1 Io, -di/dt=200a/us 4 V R=V RRM 5 V R=30V, I F=0.1 Io, -di/dt=200a/us 2 in one-package Ta=25 Device type Maximum rating Thermal rating Characteristics Package Net V RRM I 1 O I 2 FSM T j and T stg V 3 FM I 4 RRM t 5 rr R th (j-c) mass Volts Amps. Amps. Max. Volts Max.A sec. /W Grams FDRW40C120J (Tc=98 C) to TO-247-P2 4.9 FDRW60C120J (Tc=87 C) to TO-247-P2 4.9 ( ) ( ) Conditions 1 50Hz duty=1/2 () 1 50Hz Square wave duty=1/2, Output Current of center tap full wave connection 2 10ms. 1 3 I F=0.5 Io, 1 2 Sine wave, 10ms 1shot, Rating per element 3 I F=0.5 Io, Rating per element 4 V R=V RRM 1 4 V R=V RRM, Rating per element 5 V R=30V, I F=0.05 Io, -di/dt=200a/us, 1 5 V R=30V, I F=0.05 Io, -di/dt=200a/us, Rating per element 103

104 6 Fuji Electric s pressure sensors combine piezo resistance, adjustment circuits, and EMC protection on single chip and contribute to reduction of system size. They operate in wide pressure range and are applicable to various uses. Features Absolute pressure measurement High accuracy with digital trimming Wide pressure range, full scale of 100kPa to 300kPa Provided with overvoltage protection circuit, EMC filter, and surge protective device in the sensor chip Surge protection conforms to ISO7637-level 4 for automotive components Diagnostic self-detecting function in the event of a wire opened among Vcc, Vout and GND terminals High reliability ensured by EPROM bit redundancy Products Device type Max. applied Allowable Operating Operating Operating Output Package voltage voltage temperature pressure voltage Voltage range (kpa.abs) (V) () (kpa.abs) (V) (V) EPL4PC-R3S to to ± to EPL6GC-R3S to to ± to 4.5 Dimensions, mm Direct mounting type ø6.7 ± ± ± ± ± ± ± ± Vout 2. Vcc 3. GND 8.6 ±0.1 4 ±0.15 (2.47) 2.47 ±0.1 (ø5) (ø8.49) 25.2 (40 ) 9.28 ± ± ± ± ± ±