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- ゆゆこ つちかね
- 5 years ago
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1 Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variablespeed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the highspeed switching performance of a power MOSFET with the highvoltage/high-current handling capabilities of a bipolar transistor. The IGBT and diode devices of Fuji electric s 7th-generation X series that constitute these modules have been made thinner and miniaturized, thereby optimizing the device structure. This has successfully reduced power dissipation in inverter operation compared with conventional products (Fuji Electric's 6thgeneration V Series), contributing to energy saving and power cost reduction of the equipment on which the module is installed. to improve the module s heat dissipation. Combined with the feature described above (reduced power dissipation) to suppress 1 reduction has been achieved in comparison to the conventional module. In addition, the maximum temperature guaranteed in continuous operation has been increased from the conventional 150 C to 175 C, which allows 2 while maintaining the size of the equipment on which the module is installed. This contributes to reducing the size and total cost of the equipment. Number of IGBT Switches Products Category Page Standard Module Max V CE Rated Current IGBT Module Power Integrated Module Intelligent Power Module Newly developed structures and materials of the module have realized to increase its stability and durability in high-temperature operation. This contributes to improving the stability and reliability of the equipment on which the module is installed. Discrete IGBT 650V 1200V 1700V
2 PIM & 6-pack Products Map Ic (A) 600 XNA XNA Power Integrated Module 7MBR Ic IGBT series & Package type Vces XKA, XKC mm 450 XKB, XKD mm XM, XP, XW, XY mm XN, XR, XX, XZ 122mm XY XP XXA XNA XZA XRA XZ XX XR XN XX XB 6-pack 6MBI Ic IGBT series & Package type XB, XX XNA Vces mm 1mm 75 XWA XMA XY XW XP XM PIM XKC XKA XKD XKB 6-pack XKC XKA XKD XKB 650V 1200V 1700V 2-pack Products Map Ic (A) 2-pack 2MBI Ic IGBT series Vces & Package type 1800 XXF XXB XXF XXB XAA XBE XDE XEE XHA mm mm 108 mm Standard Pack mm 108 mm XXE XXA XXE XXA XN 150 mm XXA, XXE mm PrimePACK XXB, XXF mm PrimePACK Infineon Technologies PrimePACK is registered trademark of Infineon Technologies AG, Germany XN XDE XEE XDE XHA XEE XEE XN XBE XAA XHE XBE XAA XAA 650V 1200V 1700V
3 VCES: Collector-to-emitter rated voltage (Gate-to-emitter short-circuited) VGES: Gate-to-emitter rated voltage (Collector-to-emitter short-circuited) IC: Rated collector current PC: Maximum power dissipation VCE(sat ): Collector-to-emitter saturation voltage ton: Turn-on time toff: Turn-off time tf: Fall time td(on): Turn-on time td(off): Turn-off time
4 650V 1200V 12 Ic X series X series Solder pins 12 Solder pins Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams New products VCE(sat), VFM : at Tj=25, Chip
5 Solder pins 650V 1200V Ic X series X series P P1 R S T B U V W 45 Solder pins Solder pins 45 Solder pins M719 N N1 Power Flow INV REC W R S T U V INPUT OUTPUT M720 P P1 R S T B U V W M719 N N1 INPUT S T M720 R Power Flow REC INV OUTPUT U V W Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M M M720 New products VCEVFM
6 650V 1200V Ic X series X series P P1 R S T B U V W M721 M722 M721 M722 N N1 R S T B INPUT S T Power Flow REC INV W R S T U V INPUT OUTPUT P P1 N N1 REC R Power Flow INV OUTPUT U V W U V W Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M M M722 Under development VCEVFM
7 Solder pins M668 M648 P N P N U V W U V W Ic 1200V X series V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD TBD M ± TBD TBD TBD M ±20 TBD TBD TBD TBD M ±20 TBD TBD TBD TBD M ± TBD TBD TBD M ± TBD TBD TBD M ±20 TBD TBD TBD TBD M ±20 TBD TBD TBD TBD M648 New products VCE(sat): at Tj=25, Chip 6MBI200XBE MBI200XXE MBI200XBE MBI200XXE120-50; mium type (Low Thermal Impedance Version)
8 1200V 1700V Ic X series X series T1 T2 U+ V+ W+ C5 C3 C M9 G5 G3 G1 E5 U1 E3 V1 E1 W1 U2 V2 W2 G6 G4 G2 E6 E4 E2 U- V- W- V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD 225 TBD TBD TBD M9 TBD 1200 ±20 TBD TBD TBD TBD TBD M9 TBD 1200 ± TBD TBD 450 TBD TBD TBD M9 TBD 1200 ± TBD TBD 600 TBD TBD TBD M9 TBD 1700 ± TBD TBD 225 TBD TBD TBD M9 TBD 1700 ±20 TBD TBD TBD TBD TBD M9 TBD 1700 ± TBD TBD 450 TBD TBD TBD M9 TBD 1700 ± TBD TBD 600 TBD TBD TBD M9 TBD Under development VCE(sat): at Tj=25, Chip
9 M V 1200V 1700V Ic X series X series X series 108 M M276 M277 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 650 ± TBD TBD 150 TBD TBD TBD TBD 650 ± TBD TBD 200 TBD TBD TBD TBD 650 ±20 TBD TBD TBD TBD TBD M274 TBD 650 ± TBD TBD 400 TBD TBD TBD M274 TBD 650 ± TBD TBD 400 TBD TBD TBD M275 TBD 650 ± TBD TBD 600 TBD TBD TBD M275 TBD 650 ± TBD TBD 600 TBD TBD TBD M277 TBD 1200 ± TBD TBD 100 TBD TBD TBD TBD 1200 ± TBD TBD 150 TBD TBD TBD TBD 1200 ± TBD TBD 200 TBD TBD TBD TBD 1200 ± TBD TBD 200 TBD TBD TBD M274 TBD 1200 ±20 TBD TBD TBD TBD TBD M274 TBD 1200 ± TBD TBD 400 TBD TBD TBD M275 TBD 1200 ± TBD TBD 600 TBD TBD TBD M275 TBD 1200 ±20 TBD TBD TBD TBD TBD M276 TBD 1200 ± TBD TBD 450 TBD TBD TBD M276 TBD 1200 ± TBD TBD 600 TBD TBD TBD M276 TBD 1200 ± TBD TBD 450 TBD TBD TBD M277 TBD 1200 ± TBD TBD 600 TBD TBD TBD M277 TBD 1700 ±20 75 TBD TBD 75 TBD TBD TBD TBD 1700 ± TBD TBD 100 TBD TBD TBD TBD 1700 ± TBD TBD 150 TBD TBD TBD TBD 1700 ± TBD TBD 150 TBD TBD TBD M276 TBD 1700 ± TBD TBD 200 TBD TBD TBD M276 TBD 1700 ±20 TBD TBD TBD TBD TBD M276 TBD 1700 ± TBD TBD 400 TBD TBD TBD M276 TBD 1700 ±20 TBD TBD TBD TBD TBD M277 TBD 1700 ± TBD TBD 400 TBD TBD TBD M277 TBD 1700 ± TBD TBD 600 TBD TBD TBD M277 TBD Under development
10 Solder pins 1200V 1700V Ic X series X series 150 M254, M M282, M286 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M ± TBD TBD 800 TBD TBD TBD M ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M ± TBD TBD 800 TBD TBD TBD M ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M ± TBD TBD 225 TBD TBD TBD M ±20 TBD TBD TBD TBD TBD M ± TBD TBD 450 TBD TBD TBD M ± TBD TBD 600 TBD TBD TBD M286 Under development VCE(sat): at Tj=25 C, Chip
11 M271 Inverter 1200V 1700V X series X series Ic Low switching loss Soft turn off Low switching loss Soft turn off Inverter M272 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t d(on) t d(off) t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± TBD TBD 900 TBD TBD TBD M ± TBD TBD 900 TBD TBD TBD M ± TBD TBD 1200 TBD TBD TBD M ± TBD TBD 1200 TBD TBD TBD M ± TBD TBD 1400 TBD TBD TBD M ± TBD TBD 1800 TBD TBD TBD M ± TBD TBD 650 TBD TBD TBD M ± TBD TBD 1200 TBD TBD TBD M ± TBD TBD 1000 TBD TBD TBD M ± TBD TBD 1400 TBD TBD TBD M ± TBD TBD 1800 TBD TBD TBD M Under development VCE(sat): at Tj=25 C, Chip
12 Built-in protection functions P-side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (External current detection and shutdown) Overheating protection (self shutdown) Temperature sensor output (Vtemp, out) Small IPM with High Voltage -IC Ic 600V X series Inverter Control Device type V CES I C V CE(sat) V CCL Boot- Input signal Protection function Net Cont. V CCH strap UV OC Vtemp TOH mass VB Diode and Voltage V CCL VFO fault output Typ. Typ. level V CCH Volts Volts Volts VB Grams Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side - N-side(UV,OC) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) Built-in P&N-side N-side N-side ) N-side(UV,OC,TOH) New Products 1 1 External current ditection 2 LVIC 2 Temperature detection in LVIC High side bias voltage for IGBT driving VB(U) VB(V) VB(W) Power supply V CCH High side IN(HU) PWM IN(HV) signal input IN(HW) GND COM High-side Drv. High-side Drv. High-side Drv. P U V W GND COM Power supply V CCL Low side IN(LU) PWM IN(LV) signal input IN(LW) Fault output VFO Temperature sensor output TEMP Low-side Drv. N(W) N(V) N(U) IS OC sensing voltage input
13 Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSFET with the high-voltage/high-current handling capabilities of a bipolar transistor. chipset Tj(max.)=175 C, Tj(op)=150 C Easy assemblage, solder free options RoHS compliant (Some parts are Non RoHS.) Improved noise-loss trade-off Reduced turn-on dv/dt, excellent turn-on dic/dt Soft switching behavior, turn-off oscillation free
14 PIM & 6-pack Products Map Ic (A) VB VY VP VZ VR VW VA VX VB VJC VZ VX VR VN VW VA VX VB V U4B V Power Integrated Module 7MBR Ic IGBT series & Package type VJA VJB VJC VKA, VKC VKB, VKD VA, VM, VP, VW, VY VB, VN, VR, VX, VZ 6-pack 6MBI Ic IGBT series & - Vces Package type - Vces mm mm mm mm mm mm 122 mm VA, VW mm 75 VB VB, VX, U4B V mm 1 mm 50 VKD VKB VA VY VW VP VM VKC VKA PIM 6-pack VJA VKC VKA VKD VKB VJB VA 600V 1200V 1700V 1-pack / 2-pack Products Map Ic (A) VB VA pack VD VE VA VD VB VH VE VN VJ VX VC V VD VG 600V 1200V 1700V 3300V 2-pack VXB VXA V VA VH VE VR VC VN VS VD VT VG VX VXB VXA VJ UE UG 1-pack 1MBI Ic IGBT series & Package type - Vces V 108 mm Standard Pack VC, VR, UG mm High Power VD, VS, UE mm Module 2-pack 2MBI Ic IGBT series & Package type VA VB VD VE VH VJ, VN, VX - Vces mm mm 108 mm Standard Pack mm 108 mm 150 mm High Power VG, VT mm Module VXA mm PrimePACK VXB mm PrimePACK Infineon Technologies PrimePACK is registered trademark of Infineon Technologies AG, Germany
15 Intelligent Power Module Products Map Ic (A) 400 VEA 300 6/7MBP Ic IGBT series & - Vces Package type 7 in 1 6 in 1 VAA mm VBA mm VDA, VDN mm VEA mm VFN* mm Thermal impedance of VDN type is lower than VDA type. 200 VDA VDN VEA VFN VDA VDN 75 VBA 50 VAA VBA VFN VAA 0 600V 1200V VCES: Collector-to-emitter rated voltage (Gate-to-emitter short-circuited) VGES: Gate-to-emitter rated voltage (Collector-to-emitter short-circuited) IC: Rated collector current PC: Maximum power dissipation VCE(sat ): Collector-to-emitter saturation voltage ton: Turn-on time toff: Turn-off time tf: Fall time td(on): Turn-on time td(off): Turn-off time
16 600V 1200V 12 Ic V series V series M Solder pins 12 M Solder pins 12 M M729 Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M VCE(sat), VFM : at Tj=25, Chip
17 40 42 R S T P N Pb B Gb Nb P1 Gu U Gx Ex Gv V Gy Ey Gw W Gz Ez Temp. Sensor T1 T2 1200V Ic V series M724 R S T P N Pb B Gb Nb P1 Gu Eu U Gx N1 Gv Ev V Gy Gw Ew W Gz Temp. Sensor T1 T2 En M725 R S T P N Pb B Gb Eb Nb P1 Gu Eu U Gv Ev V Gw Ew W Gx GY Gz Ex N1 Ey Ez Temp. Sensor T1 T2 Inverter [IGBT] Converter [Diode] Device type V CES I C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M New Products VCE(sat), VFM: at Tj=25, Chip 1 2 "-50" Standard LidSlim Lid
18 Solder pins 600V 1200V Ic V series V series P P1 R S T B U V W 45 Solder pins Power Flow REC INV W R S T U V Solder pins P P1 Solder pins Power Flow REC INV W Solder pins P P1 R S T B U V W M719 N N1 Solder pins R INPUT S Power Flow T REC INV M711 M712 M719 M720 M720 N N1 INPUT R S T B N N1 OUTPUT U V W R S T U V INPUT OUTPUT OUTPUT U V W Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M M M M M M M M M720 VCEVFM
19 600V 1200V Ic V series V series P P R S T B U V W Power Flow INV REC W R S T U V R S T P P1 B U V W INPUT R S Power Flow T REC INV M721 M722 M721 M722 N N1 INPUT N N1 OUTPUT OUTPUT U V W Inverter [IGBT] Converter [Diode] Device type V CES I C P C V CE(sat) V CES I C V RRM V RRM I O V FM I FSM Net Cont. Typ. Cont. Cont. Typ. mass Volts Volts Volts Volts Volts Volts Grams M M M M M M M M M M M M M M M M M M M722 VCE(sat), VFM: at Tj=25, Chip
![59 82 M664 P N [ Inverter ] Temp. Sensor T1 T2 U V W 1200V Ic V series V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ±20 100 1.](/docs-images/90/104484014/images/20-0.jpg "75 100 0.44 0.05 M664 95 1200 ±20 100 1.75 100 0.44 0.05 M664 95 1200 ±20 150 450 1.85 150 0.45 0.")
20 59 82 M664 P N [ Inverter ] Temp. Sensor T1 T2 U V W 1200V Ic V series V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M Under development VCE(sat): at Tj=25, Chip 1 2 6MBI150VJC MBI150VJC "-50/-55" Standard LidSlim Lid Note2: 6MBI150VJC , 6MBI150VJC ; mium type (Low Thermal Impedance Version)
21 Solder pins 600V 1200V 1700V Ic P V series V series V / U series U V W N Solder pins P 122 P P U V W 122 M647 M648 N N N U V W U V W V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 600 ± ± ± ± ± M ± M ± M ± M ± ± ± ± ± ± ± ± M ± M ± M ± M ± M ± M ± M ± M ± ± VCE(sat): at Tj=25, Chip 6MBI180VB MBI180VX MBI180VB , 6MBI180VX ; mium type (Low Thermal Impedance Version)
22 1200V 1700V Ic V series V series U+ T1 V+ T2 W M9 C5 C3 C1 G5 G3 G1 E5 U1 E3 V1 E1 W1 U2 V2 W2 G6 G4 G2 E6 E4 E2 U- V- W- V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M9 950 VCE(sat): at Tj=25, Chip -80 : TIM Thermal-Interface-Material
23 V 1200V 1700V Ic V series V series V series M M275 * 2MBI450VH-120F M276 M277 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 600 ± ± ± ± M ± M ± M ± M ± M ± ± ± ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± ± ± M ± M ± M ± M ± M VCE(sat): at Tj=25 C, Chip
24 Solder pins 1200V 1700V Ic V series V series M M282 Spring contacts M260 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M260 : -80 : TIM Thermal-Interface-Material VCE(sat): at Tj=25 C, Chip 150
25 M256, M V 1700V V series V series Ic Cu-baseplate Cu-baseplate V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M VCE(sat): at Tj=25 C, Chip Switching time: at Tj=125 C
26 1200V 1700V V series V series Ic Low switching loss Soft turn off Low switching loss Soft turn off M271 Inverter Inverter 89 M272 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M VCE(sat)VF VF -54CE(sat) and VF. The products with F and thermal resistance.
27 1200V 1700V V series V series Ic 108 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± ± ± ± ± ± ± ± VCE(sat): at Tj=25 C, Chip
28 M151, M155 M152, M V 1700V V series V series U Series Ic Cu-baseplate Cu-baseplate V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M156 ± M ± M ± M ± M156 ± M156 ± M156 New Products VCE(sat): at Tj=25 C, Chip Switching time: at Tj=125 C, at Tj Low switching losses
29 600V 1200V M2 C1 Inverse Diode FWD NC G1 E1 E1C2 G2 E2 Inverse Diode E2 Ic U series U series V series FWD E2 NC 108 G1 E1 E1C2 G2 E2 M259 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 600 ± M ± M ± M ± M ± M ± M ± M2 180 VCE(sat): at Tj=25 C, Chip
30 Chopper 1200V 1700V V series V series M271 Low Side High Side Ic Soft turn off Low side Soft turn off High side Low switching loss Low switching loss Chopper M272 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M ± M New products VCE(sat): at Tj=25, Chip -54 VCE(sat)VF -54CE(sat) and VF. Chopper 1200V 1700V Low Side High Side V series V series Ic Boost (Low side) Chopper Chopper Boost (Low side) Chopper Chopper M271 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± M VCE(sat): at Tj=25, Chip -54 VCE(sat)VF -54CE(sat) and VF.
31 Chopper 1200V Ic High Speed IGBT 108 M M M M276 V CES V GES I C P C V CE(sat) (V GE=15V) Switching time Device type Cont. Typ. I C t on t off t f Net mass Typ. Typ. Typ. Volts Volts Volts Grams 1200 ± M ± M ± M ± ± M ± M ± M ± M ± M ± M276 VCE(sat): at Tj=25 C, Chip
32 conversion efficiency. Lower power loss can be achieved by using RB-IGBT as for owest power loss can be achieved by using 6th Gen. IGBT 1-leg T-Type T3 T1 Ic T1, T2 600V 1200V 1700V 600V 600V 900V 1200V 1200V RB-IGBT T4 T2 2 1-leg T-Type T3 T M404 RB-IGBT T4 T2 1-leg I-Type T1 M404 T2 1-leg I-Type T3 T T1, T2 Device type V CES I C P C V CE(sat) (V GE=15V) V CES I C P C V CE(sat) (V GE=15V) Net mass Cont. Typ. I C Cont. Typ. I C Volts Volts Volts Volts Grams M M M M TBD TBD TBD TBD M M404 New Products, Under development VCE(sat): at Tj=25 C, Chip : VF Note: VF type is lower thermal impedance version. Particular for Inverter Particular for Converter
33 Ic T1, T2 1200V 600V P T3u T1u T3v T1v T3w T1w M T4u T2u U T4v T2v V T4w T2w W 122 N P T3u T1u T3v T1v T3w T1w M T4u T2u U T4v T2v V T4w T2w W 122 N M1202 T1, T2 Device type V CES I C P C V CE(sat) (V GE=15V) V CES I C P C V CE(sat) (V GE=15V) Net mass Cont. Typ. I C Cont. Typ. I C Volts Volts Volts Volts Grams M M M1202 VCE(sat): at Tj=25 C, Chip
34 Built-in protection functions P-side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (self shutdown) Overheating protection (self shutdown) 600V 1200V Ic V series V series P P Inverter Control Device type V CES I C V CE(sat) V CES I C V CC I OC[INV] V UV T joh Net Cont. Typ. Cont. Typ. Min. Min. OC(typ.) UV(typ.) T joh(typ.) mass Volts Volts Volts Volts Volts ms ms ms Grams to P to P to P to P to P to to to to to to to P to P to P to P to P to P to to to to to to
35 Built-in protection functions P-side fault status output (Alarm) N-side fault status output (Alarm) Under voltage protection (self shutdown) Over current protection (self shutdown) Overheating protection (self shutdown) V 1200V Ic V series V series Alarm output U Alarm output V Alarm output W P Supply voltage VCCU Signal input VinU GND U Supply voltage VCCL VinX Signal input for low side VinY VinZ Alarm output ALM GND RALM VCCV VinV GND V - VCCW VinW GND W Tj-sensor IC-sensor U V W N P Supply voltage VCCL Alarm output ALM GND VCCU VinU GND U RALM VinX RALM RALM RALM VCCV VinV GND V VinY VCCW VinW GND W VinZ Tj-sensor U V W N IC-sensor P Supply voltage VCCL Alarm output ALM GND Alarm output U Alarm output V Alarm output W VCCU VinU GND U RALM VinX RALM RALM RALM VCCV VinV GND V VinY VCCW VinW GND W VinZ Tj-sensor U V W N IC-sensor P B Supply voltage VCCL Alarm output ALM Signal input VinB GND RALM Alarm output U Alarm output V Alarm output W RALM RALM RALM VCCU VinU GND U VinX VCCV VinV GND V VinY VCCW VinW GND W U V W VinZ N Tj-sensor IC-sensor
36 Inverter Control Device type V CES I C V CE(sat) V CES I C V CC I OC[INV] V UV T joh Net Cont. Typ. Cont. Typ. Min. Min. OC(typ.) UV(typ.) T joh(typ.) mass Volts Volts Volts Volts Volts ms ms ms Grams to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to to VDN Note The products with VDN on this page have high heat dissipation characteristics.
37 V CES (V) I C Trench-FS RB-IGBT TO-247-P2 600/ ~ ~10 ~20 ~40 ~50 ~60 ~70 ~80 ~90 ~100 Part numbers Company Device code Current Polarity Voltage Series Diode Type Equivalent circuit
38 650V,1200V650,1200 volts class Maximum Ratings V CE(sat) E on E off Q G V F Qrr Device type V CES I C I CP P D (V GE=15V) (r g=10 ) I F Net Tc=100 C IGBT Typ. typ. typ. typ. Tc=100 C typ. mass Volts Volts mj mj nc Volts Grams TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P2 6.0 New Products, Under development
39 600V600 volts class Maximum Ratings V CE(sat) E on E off Q G V F Qrr Device type V CES I C I CP P D (V GE=15V) (r g=10 ) Net Tc=100 C IGBT Typ. typ. typ. typ. I F typ. mass Volts Volts mj mj nc Volts Grams TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P V1200 volts class Maximum Ratings V CE(sat) E on E off Q G V F Qrr Device type V CES I C I CP P D (V GE=15V) (r g=10 ) Net Tc=100 C IGBT Typ. typ. typ. typ. I F typ. mass Volts Volts mj mj nc Volts Grams TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P TO-247-P2 6.0 Maximum Ratings V CE(sat) E on E off Q G t rr Device type V CES I C I CP tsc P D (V GE=15V) (r g=10 ) Net Tc=100 C IGBT Typ. typ. typ. typ. mass Volts μsec. Volts mj mj nc n sec Grams TO-247-P2 6.0
40 Including circuit board whitch has IGBT drive and protection fanction Optical isolated (signal input, IGBT s temperature monitor, alarm output) Detection and protection (short-circuit, over-temperature, under-voltage) (Tj=25 C) V CES I C(Cont) V CE(sat) V F Device type Volts Typ. Volts Typ. Volts Net mass Grams P g 6th Generation V-series 650V-IGBT Direct liquid Cooling Finbase with copper High power density and RoHS compliant VCE (sat): at Tj=25 C, Chip V CES I C(Cont) I V CE(sat) V F Device type Volts Typ. Volts Typ. Volts Net mass Grams IC 1.70 IF M g 7 th Generation RC-IGBT 750V-IGBT High power density,small and High reliability Tjmax 175 guaranteed VCE (sat): at Tj=25 C, Chip V CES I C(Cont) I V CE(sat) V F Device type Volts Typ. Volts Typ. Volts Net mass Grams g Under development
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FUJI SEMICONDUCTORS 25A2-W-0001d Fuji Electric Power Semiconductors contibuting Energy Management in various fields Fuji Electric provides Power Semiconductors enabling high-efficiency energy usage in
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FUJI ower Semiconductors IGBT/SiC Devices Selection Guide Small IM AGE 8 IM AGE 9 6-ack AGE 11 Standard 2-ack AGE 13 Standard 1-ack/ Chopper AGE 15 High ower Module AGE 17 rimeack AGE 18 T/I-type C 3-level
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FUJI ower Semiconductors IGBT/SiC Devices Selection Guide Small IM AGE 8 IM AGE 9 6-ack AGE 11 Standard 2-ack AGE 13 Standard 1-ack/ Chopper AGE 15 High ower Module AGE 17 rimeack AGE 18 T/I-type C 3-level
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FUJI SEMICONDUCTORS 25A2-W-0001b 2 3 5 6 7 9 11 13 14 15 16 17 18 19 20 22 23 26 26 27 28 28 29 31 33 35 44 45 46 47 47 49 50 51 55 57 61 62 63 63 64 64 65 65 66 66 67 69 71 72 75 76 77 78 79 79 80 81
Microsoft PowerPoint - 2章（和訳ver）_15A版_rev.1.1.ppt
第 2 章 端子記号 用語の説明 内容 ページ 1. 端子記号の説明. 2-2 2. 用語の説明 2-3 2-1 1. 端子記号の説明 表 2-1と表 2-2はそれぞれ端子記号と定義について説明しています 表 2-1 端子記号の説明 端子番号 端子名 端子説明 3 VB(U) ハイサイド駆動電源電圧端子 ( 上アームU 相 IGBT 駆動 ) 5 VB(V) ハイサイド駆動電源電圧端子 ( 上アームV
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50A >50A >150A >300A 150A 300A 600A 1 Standard 1-pack 15 Chopper 17 2 Standard 2-pack 11 >600A 1200A >1200A 12 1,2 High Speed Module 19 High ower Module 13,16 rimeack 14,18 6 6-pack 9 10 4,12 AT-NC 3 level
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Introduction Fuji Smart power device M-POWER2 for Multi-oscillated current resonant type power supply Summary System: The ideal and Fuji s original system It includes many functions(soft-switching,stand-by).
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Fuji Electric has a lineup of power MOSFETs ranging from medium to high-voltage types with features such as low power loss, low noise, and low on-resistance. The Super J-MOS Series uses superjunction technology,
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7 V typ 7 0 V MSOP : 40 V+ V SENSE DC/DC BIAS CIRCUIT CURRENT COMPENSATION I OUT COM BIAS ALPHA 094-00 V PNP 0 7 V typ PNP PNP REV. A REVISION 007 Analog Devices, Inc. All rights reserved. 0-9 -- 0 40
Fig. 1. Relation between magnetron anode current and anode-cathod voltage. Fig. 2. Inverter circuit for driving a magnetron. 448 T. IEE Japan, Vol. 11
High Frequency Inverter for Microwave Oven Norikazu Tokunaga, Member, Yasuo Matsuda, Member, Kunio Isiyama, Non-member (Hitachi, Ltd.), Hisao Amano, Member (Hitachi Engineering, Co., Ltd.). Recently resonant
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PC725NSZXF PC725NSZXF PC725NSZXF PC725 DE file PC725 Date Jun. 3. 25 SHARP Corporation PC725NSZXF 2 6 5 2 3 4 Anode Cathode NC Emitter 3 4 5 Collector 6 Base PC725NSZXF PC725YSZXF.6 ±.2.2 ±.3 SHARP "S"
MAX665S//X ABSOLUTE MAXIMUM ATINGS B4P to PKN (MAX665X) to 24 B3P to PKN (MAX665) to 8 B2P to PKN (MAX665S) to 2 BP to PKN, B2P to B
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Unidirectional Measurement Current-Shunt Monitor with Dual Comparators (Rev. B
www.tij.co.jp INA206 INA207 INA208 INA206-INA208 INA206-INA208 V S 1 14 V IN+ V S 1 10 V IN+ OUT CMP1 IN /0.6V REF 2 3 1.2V REF 13 12 V IN 1.2V REF OUT OUT CMP1 IN+ 2 3 9 8 V IN CMP1 OUT CMP1 IN+ 4 11
iiiC Store.Category.Electronic Component.Power Modules
FUJI SEMICONDUCTORS Power MOSFETs Rectifier diodes Pressure sensors Power devices Integrated circuits Step Forward, Raise Value Ratings and Characteristics Page Super FAP-E 3 series... 2 Super FAP-G series...
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CORELESS MOTOR SCR8-17 SCR10-17 SCR10-25 SCR12-13 SCR12-18 SCR12-26 SCR13-20 SCR13-28 NEW SCR16-25 SCR16-35 SCR17-25 SCR17-35 SCR18-37 SC21-37 SC24-32 Smaller and higher-performance motors realized by
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PC2XNNSZF PC2XNNSZF = UL577 2 fi le No. E68 PC2 BSI BS-EN665 fi le No. 787 BS-EN695 fi le No. 79 PC2 SEMKO EN665 EN695 PC2 DEMKO EN665 EN695 PC2 NEMKO EN665 EN695 PC2 FIMKO EN665 EN695 PC2 CSAfile No.CA952
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Overture 68W ( ) 0.1 (THD N) 20Hz 20kHz 4 68W 8 38W SPiKe (Self Peak Instantaneous Temperature ( Ke)) SOA (Safe Operating Area) SPiKe 2.0 V ( ) 92dB (min) SN 0.03 THD N IMD (SMTPE) 0.004 V CC 28V 4 68W
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NJM88/A ma.µf SOT-89- TO--(NJM88ADL) ESON6-H(NJM88AKH) NJM88U NJM88ADL NJM88AKH (...97mm) 7dB typ. (f=khz, Vo=V ) Vno=µVrms typ..µf (Vo.7V) Io(max.)=mA Vo±.%.8V typ. (Io=mA ) ON/OFF SOT-89-(NJM88U) / TO--(NJM88ADL)
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Electrical Equipment for High Speed Rolling Stock 23A1-W-0012 1 Fuji Electric produces electrical equipment for Shinkansen (bullet) trains, contributing to the famously safe, high-speed operation of Shinkansen
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PC87XJF PC87XJF PC87XJF PC87XJF PC87 Date Jun.. 5 SHRP Corporation PC87XJF node Cathode Emitter Collector PC87XJF PC87XIJF node mark. ±..6 ±. Rank mark Factory identification mark Date code PC87.58 ±.5
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µ µ LT1398/LT1399 V IN A R G 00Ω CHANNEL A SELECT EN A R F 3Ω B C 97.6Ω CABLE V IN B R G 00Ω EN B R F 3Ω 97.6Ω V OUT OUTPUT (00mV/DIV) EN C V IN C 97.6Ω R G 00Ω R F 3Ω 1399 TA01 R F = R G = 30Ω f = 30MHz
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ON/OFF 3mA.µF.V.V DSC/DVC U. V.V (.Vstep) 7dB typ. (f=khz Vo=3V ) Vno=µVrms typ..µf (Vo.V) Io(max.)=3mA Vo±.%.V typ. (Io=mA ) ON/OFF SOT-89-3 U. CONTROL. GND 3. N.C.. V OUT. V IN V IN V OUT Control Bandgap
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OPA OPA OPA OPA OPA OPA OPA OPA OPA TM µ Ω ± ± ± ± + OPA OPA OPA Offset Trim Offset Trim Out A V+ Out A Out D In +In V+ Output In A +In A A B Out B In B In A +In A A D In D +In D V NC V +In B V+ V +In
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www.tij.co.jp OPA3875 µ ± +5V µ RGB Channel OPA3875 OPA3875 (Patented) RGB Out SELECT ENABLE RED OUT GREEN OUT BLUE OUT 1 R G B RGB Channel 1 R1 G1 B1 X 1 Off Off Off 5V Channel Select EN OPA875 OPA4872
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THIN TRNSORMRS (MPT TYP) OMSTI(JPN) U S I TYP MPT MPT series are available for the thinner-sized sets and suit to I standard. H MPT I KS5535 KS6435 KS7235 KS7250 KS7270 KS9640 KS9660 KS9680 KS00 75.0 67.0
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Guide for Electret Condenser Microphones A microphone as an audio-electric converting device, whose audio pickup section has a structure of a condenser consisting of a diaphragm and a back plate opposite
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Thyristor Type Single-Phase Power Regulator 2030 A 6A 150200A TOKYO RIKOSHA CO., LTD Latest VARITAP VSCW Series Achieved 1/2 the width (our company comparison). Free Power source of 100 to 240V specification.cover-type
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I N S T R U M E N T A T I O N & E L E C T R I C A L E Q U I P M E N T STW Symbol Symbol otary switch) 05 otary switch Symbol angle of notch 181
These items are using an aluminum alloy cast, so the weight is corrosion-resistant and excel halo tolerance and is light-weight and it's about 1/3 compared with conventional cast iron and made of steel
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1.0 1. Display Format 8*2 Character 2. Power Supply 3.3V 3. Overall Module Size 30.0mm(W) x 19.5mm(H) x max 5.5mm(D) 4. Viewing Aera(W*H) 27.0mm(W) x 10.5mm(H) 5. Dot Size (W*H) 0.45mm(W) x 0.50mm(H) 6.
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3 3 LM317A 3 LM317 1.2 37V 1.5A 3 IC 2 / IC AC IC 6 3 LM317 3-Terminal Adjustable Regulator LM117 19860710 33200 24060 11800 ds009063 Increase the print percent on all Typical Curves modified formatting
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IZA 190-HZ IZA 250-LZ ZA 190-HZ ZA 250-LZ FreeSpace Integrated Zone Amplifier/Zone Amplifier * 1. 2. 3. 4. 5. 6. 7. 8. 9. 2 2 10. 11. 12. 13. 14. 15. 16. 17. 40 C This product conforms to all EU Directive
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R OPA OPA OPA OPA OPA OPA OPA OPA OPA µ µ ± ± µ OPA ±± ±± ± µ Offset Trim Offset Trim In OPA +In -Pin DIP, SO- Output NC OPA Out A In A +In A A D Out D In D +In D Out A In A +In A A B Out B In B +In B
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19-589; Rev 1; 5/8 PART TEMP RANGE P-PACKAGE ATP+ -4 C to +125 C 2 TQFN-EP* *.1μF +5.5V TO +4V ILED +5V REG.1μF.1μF +5.5V TO +4V +5V REG ILED.1μF RSSE PWM MG RSSE ANALOG CONTROL PWM MG PWM CONTROL MG 本データシートは日本語翻訳であり
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- Practical Use of Lead-Free Tin-Zinc-Aluminum (Sn-Zn-Al) Solder - - - - - Abstract Fujitsu has implemented a company-wide effort to progressively reduce the use of lead and eventually eliminate this environmental
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Development of a Quick-Acting Type Fuses for Protection of Low Voltage Distribution Lines Terukazu Sekiguchi, Member, Masayuki Okazaki, Member, Tsuginori Inaba, Member (CRIEPI), Naoki Ikeda, Member, Toshiyuki
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* µ ** µ D1 MBRS13LT3 C2.47µF L1** 22µH D2 4148 2pF NOTE: COMPLETE LITHIUM-ION CHARGER, NO TERMINATION REQUIRED. R S4, R7 AND C1 ARE OPTIONAL FOR I IN LIMITING *TOKIN OR UNITED CHEMI-CON/MARCON CERAMIC
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800mA 800mA LM1117I 800mA LM1117 Chris Russell LM1117 800mA 1.2V LM1117 LM317 LM1117 2 1.25V 13.8V 1.8V 2.5V 2.85V 3.3V 5V 5 LM1117 1 LM1117 LLP TO-263 SOT-223 TO-220 TO-252 10 F 19970801 23900 DS100919
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19-0807; Rev 0; 4/07 EVALUATION KIT AVAILABLE μ PART TEMP RANGE PIN- PACKAGE PKG CODE ETO+ -40 C to +85 C 42 TQFN-EP* T42359OM-1 * EYE DIAGRAM ( = 3.3V, f = 2.6GHz 600mV P-P PRBS SIGNAL+) * PRBS = PSUEDORANDOM
あらゆる情報検出から赤外線データ通信まで 幅広い用途に使える 超小型 & 高感度 光センサー Ultra-compact, high-sensitivity optical sensors for various app ranging from information detection to i
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RoHS compliant INTERNAL STRUTURE FEATURES Part name over Slider Housing Slider contact Fixed contact Terminal pin lick spring Ground terminal Material Steel (SP), Tin-plated Polyamide opper alloy, Gold-plated
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CL-7IR-X (.x.5x.mm) Lead-free RS-4 (.65x7.5x.75mm) Lead-free PR- (.5x.375x.6 mm) Lead-free P.7 P.4 P.35 CL-9IRS-X (x.8x.8mm) Lead-free RS-47 (3.x4.5x.mm) Lead-free CPT-3 (3.xx.mm) Lead-free P.8 P.6 P.37
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DATA SHEET 品種名 パッケージコード QFH064-P-1414H 発行年月 : 2008 年 12 月 1 目次 概要.. 3 特長.. 3 用途.. 3 外形.. 3 構造...... 3 応用回路例.. 4 ブロック図.... 5 端子.. 6 絶対最大定格.. 8 動作電源電圧範囲.. 8 電気的特性. 9 電気的特性 ( 設計参考値 )... 10 技術資料.. 11 入出力部の回路図および端子機能の
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CCH3000LJ Development of Luffing Jib Crawler Crane CCH3000LJ IHI IHI IHI IHI IHI IHI IHI In recent years, the need for the construction of social infrastructure, particularly in developing nations such
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Smaller, Lighter and Higher-output Lithium Ion Battery System for Series Hybrid Shinji Ota Jun Asakura Shingo Tode 24 ICECU Electronic Control Unit46 16 We have developed a lithium-ion battery system with
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Miniature Circuit Breakers FAZ-NA, FAZ-RT, FAZ-DU SG56912 FAZ-NA/-RT/-DU According to UL 489, CSA C22.2 No. 5 and also IEC 60947-2 standard For Applications, wich are permitted for UL 1077 or CSA C22.2
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一般機器用 For Consumer Products 汎用パワーインダクタ Common Power Inductors HER series RoHS HER327 HER427 HER527 HER627 HER88 HER9 特徴 直流重畳特性に優れている為 DC-DC コンバータ用インダクタとして最適 ドラムコアとリングコアに異なる磁性材料を使い電流特性を向上 * 既存同サイズと比べて電流特性を約
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Featuring world-class product variations and ease of SM assembly. Ultra-small Chip-LEs for use in various electronic products. As information devices become ever more compact and sophisticated, the demand
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PC90L0NSZ0F PC90L0NSZ0F µ µ µ PC90L PC90L Date Sep.. 00 SHARP Corporation 7 NC Anode Cathode NC 7 GND V O (Open collector) V E (Enable) V CC H H L L H H H L H L L H L: (0) H: () PC90L0NSZ0F PC90L0YSZ0F
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AVR Type: AVR-M AVRL Issue date: September 211 RoHS EU Directive 22/95/EC PBB PBDE (1/1) SMD RoHS AVR AVR-M AVRL Varistor 2Zener diode Current(A) Positive direction 1 1 1 2 1 3 1 4 1 5 Zener diode /Vz:6.8V
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お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
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お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
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お客様各位 カタログ等資料中の旧社名の扱いについて 21 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジが合併し 両社の全ての事業が当社に承継されております 従いまして 本資料中には旧社名での表記が残っておりますが 当社の資料として有効ですので ご理解の程宜しくお願い申し上げます ルネサスエレクトロニクスホームページ (http://www.renesas.com)
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