PE-CVD X PTO Sawyer-tower 3.1 PTO Sawyer-tower Sawyer-tower a c 25
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1 PbTiO3(PTO)
2 PE-CVD X PTO Sawyer-tower 3.1 PTO Sawyer-tower Sawyer-tower a c
3 Valasek NaKC 4 H 6 /4H 2 O KH 2 PO 4 BaTiO Tc KDP TGS DRAM Dynamic Random Access Memory SRAM Flash Flash FRAM(Ferro-electric Random Access Memory) FRAM DRAM
4 1 1.2 PTO a c
5 2.1 PE-CVD Plasma-Enhanced Chemical Vaper Deposition CVD 2. CVD 2. PE-CVD
6 CVD PE-CVD CVD PE-CVD CVD 2.1 CVD 2.1 CVD CVD 2.2 PE-CVD CVD CVD PE-CVD (O 2 )(N 2 ) (MFC)
7 Pb(DPM) 2 Ti( i-oc 3 H 7 ) 4 () (mixer) () mm 2 (13.56MHz)(RF:Radio Frequency)
8 O 2 MFC MFC MFC Pb(DPM) 2 Mixer N 2 Heater Vent Substrate Gas Nozzle Shield TMP RP To Exhaust RF Generator 13.56MHz Matching network 2.2 PE-CVD
9 2.2 X X-ray diffraction,xrd X X X X X X 2 X X X ( )
10 X d X X d' 2.4 X NaI X d 2d sinθ = nl X θ X sinθ 2.5 X
11 2.3 (Atomic Force Microscopy, AFM) AFM 2.6 AFM 2.6 AFM 2.7 AFM AFM AFM
12 A,B A-B A-B Z Z AFM Z 2.7 AFM AFM XY nm (514.5 nm) nm 2 CCD nm
13 /mm 1800 /mm CCD PC グレーティン nm 2.8
14 Torr Au
15 2.6 PE-CVD X AFM
16 PTO Sawyer-tower 3.1 PTO PTO PTO MgO(100) Pt 100 PE-CVD PTO PTO Au 3.1 Pt Au Pt 3.1 Pt Au Pt Au ( C) ( C) ( ) g/cm 3 cal/mol C ev ev fcc fcc
17 FCC() Au PTO PTO Au Pt Pt PTO Au 0.2 mm mm 2 Au m mm 2 PTO 3.2 PTO PTO 17nm, 28nm, 39nm, 48nm, 58nm, 76nm, 89nm, 115nm, 170nm 3.2 PTO MOCVD 10 Pa 546 C 57 mm Pb(DPM2) Ti(I-OC3H7) O2 50 sccm 5 sccm 50 sccm
18 3.2 Sawyer-tower Sawyer-tower Sawyer-tower ABO 3 Tetragonal Orthorhombic Rhombohedral PTO O A O Ti B Pb 3.1 PTO ABO A B O Pb + Ti + O PTO c PTO a c a c domain O Ti c Pb 3.2
19 O A-B B-C Pmax C Pr D Pmax F 3.3 Pmax B C Pr D O E G F 3.4 Pr C D F G Pr Ec PTO 3.1 E C
20 3.3.2 Sawyer-tower 3.5 OSILLATOAR HIGH SPEED POWER AMPLIFIER ground sample X(Ch 1) C x capacitor Y(Ch 2) C o X Yground OSILLOSCOPE 3.5 C x C o C x C o C x C o V Q/ C o ( 1) Q 3.4
21 OSILLATOAR OSILLATOAR 5V HIGH SPEED POWER AMPLIFIER P-E X Vx Y Vo X sample sample Vx 3.3 SBNT Othllo kv/cm C/cm X Y X sample capacitor Vo Sample C x capacitor C o sample X sample capacitor sample Cx Co V Vx X V Vx Cx Co 101 pf 4700 pf Sawyer-tower Othello ( Channel Ferroelectric Measurement System ) SBNT 3.3 Othello SBNT Sawyer-tower SBNT SBNT Sawyer-tower kv/cm C/cm
22 SBNT P (µc/cm 2 ) E (kv/cm) 3.6 SBNT Sawyer-tower Othello 35% 54% -14% 35% BNC 3.3 PTO 3.7 Au PTO Pt MgO 3.7 Au Pt
23 E, E=V/d (1) d Sample Capacitor Q=CV (2) sample C Capacitor P P=Q/S (S Au ) nm 28nm 39nm nm 58nm 76nm nm 115nm 170nm
24 0.10 thickness 17nm P (µc/cm 2 ) E (kv/cm) P (µc/cm 2 ) thickness 28nm E (kv/cm) 0.03 thickness 39nm 0.02 P (µc/cm 2 ) E (kv/cm) 3.8 PTO 17nm,28nm,39nm
25 0.04 thickness 48nm 0.03 P (µc/cm 2 ) E (kv/cm) thickness 58nm 0.05 P (µc/cm 2 ) E (kv/cm) 30 thickness 76nm P (µc/cm 2 ) E (kv/cm) 3.9 PTO 48nm,58nm,76nm
26 thickness 89nm P (µc/cm 2 ) E (kv/cm) 30 thickness 115nm P (µc/cm 2 ) E (kv/cm) thickness 170nm P (µc/cm 2 ) E (kv/cm) 3.10 PTO 89nm, 115nm, 170nm
27 4 4.1 a c PTO X X a 4.1 c PTO PTO 100 PTO 001 PTO 4.4 PTO 100 PTO 001 PTO 001 c 4.1 Pt(100),PTO(100),PTO(001) PTO a c Pt PTO a c 4.3 c a 4.4 PTO PTO(100) c PTO(100) a PTO 100 PTO 001 Pt 100 PTO 100 PTO c PTO 100
28 PTO 001 Pt c PTO c 4.5 (001)(100) (100) (001) c c PTO PTO(100) PTO(001) 4.5 PTO(100) PTO(001) nm, 115nm, 170nm PTO PTO (S) P=Q/S 76nm 115nm 170nm µc/cm kv/cm
29 ,X ( 4.2) PTO AFM RMS nm 89nm RMS RMS nm 76nm 89nm RMS PTO 2 RMS nm, 28nm, 39nm, 48nm, 58nm PTO a c 89nm PTO a c 76nm, 115nm, 170nm PTO
30 PTO / Pt (100) / MgO (100) 17nm (001) (100) MgO (200) Pt (200) x2 28nm x2 Intensity (relative) 39nm 48nm x2 58nm θ (deg.) 4.1 PTO X 17nm-58nm
31 PTO / Pt (100) / MgO (100) 76nm (001) (100) (002) MgO (200) Pt (200) 89nm Intensity (relative) 115nm 170nm θ (deg.) 4.2 PTO X 76nm-170nm
32 1.0 PTO / Pt(100) / MgO(100) 0.8 α = I (001) / I (001) + I (100) thickness (nm) 4.3 a c
33 17nm 48nm 28nm 58nm 39nm 4.6 PTO AFM 17nm-58nm
34 76nm 115nm 89nm 170nm 4.7 PTO AFM 76nm-170nm
35 4 3 RMS (nm) thickness (nm) 4.8 RMS
36 5 5.1 sawyer-tower CVD PTO (1) Sawyer-tower Sawyer-tower (2) PTO c c RMS
37 (1) IC -FRAM - (2) (3) (4) (5) (6)
38
fma20.PDF
PZT TSC Measurement for Degraded and Damaged PZT Thin Films Capacitors Prepared by Sputtering. FeRAM MFIS : XRD, TEM : XRF, EDS, EPMA, SIMS : SPM, NDM? DLTS DLTS (TSC) (TSC) fatigue,, ( ) (1) (2) J T TSC
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14 Preparation and characterization of barium strontium titanate thin films 1055086 1 1.1 1 1.2 1 1.3 2 1.4 3 44 2 2.1 5 2.2 5 2.2.1 5 2.2.2 8 2.3 2.3.1 X 9 2.3.2 11 2.3.3 13 2.3.4 X 15 2.4 2.4.1 LCR 16
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Microsoft PowerPoint - 02_資料.ppt [互換モード]
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ＶＬＳＩ工学
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Keysight Technologies CMOSイメージセンサのランダム・テレグラフ・ノイズ(RTN)評価
Keysight Technologies CMOS (RTN) RTS noise measurement using the B1500A' s WGFMU Module Application Note Random Telegraph Noise, RTN MOS-FET RTN 22 nm CMOS RTN CMOS CMOS RTN RTN - IV RTN B1530A Waveform
応用数学III-4.ppt
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LT 低コスト、シャットダウン機能付き デュアルおよびトリプル300MHz 電流帰還アンプ
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